Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ENPP3 | O14638 | 9/20 | 0.41 |
| ▸ | ENPP1 | P22413 | 8/20 | 0.41 |
| ▸ | ENPP2 | Q13822 | 6/20 | 0.41 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.38 |
| ▸ | MAPT | P10636 | 2/20 | 0.38 |
| ▸ | LMNA | P02545 | 1/20 | 0.38 |
| ▸ | HTR1E | P28566 | 1/20 | 0.38 |
| ▸ | S1PR3 | Q99500 | 1/20 | 0.38 |
| ▸ | HPGD | P15428 | 1/20 | 0.37 |
| ▸ | RAB9A | P51151 | 1/20 | 0.37 |
| ▸ | MEN1 | O00255 | 1/20 | 0.37 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.37 |
| ▸ | USP2 | O75604 | 1/20 | 0.36 |
| ▸ | TSHR | P16473 | 1/20 | 0.36 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.36 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.35 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.34 |
| ▸ | PSEN1 | P49768 | 1/20 | 0.34 |
| ▸ | PSEN2 | P49810 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL965128 | 0.92 | LMNA (0.40) | ENPP3ENPP1ENPP2EPHX2ALDH1A1 | |
| SCHEMBL962244 | 0.83 | HSD11B1 (0.40) | ALDH1A1MAPTRAB9AMEN1KMT2A | |
| SCHEMBL962176 | 0.82 | MAPT (0.42) | ALDH1A1MAPTLMNARAB9AMEN1 | |
| SCHEMBL546278 | 0.80 | ALDH1A1 (0.39) | ENPP3ENPP1ENPP2EPHX2ALDH1A1 | |
| SCHEMBL964662 | 0.79 | MEN1 (0.37) | ENPP3ENPP1ENPP2ALDH1A1MAPT | |
| SCHEMBL15239216 | 0.78 | AKR1C3 (0.33) | ALDH1A1MAPTRAB9AMEN1KMT2A | |
| SCHEMBL13720818 | 0.77 | MEN1 (0.43) | ENPP3ENPP1ENPP2EPHX2ALDH1A1 | |
| SCHEMBL960745 | 0.76 | ENPP1 (0.43) | ENPP3ENPP1ENPP2ALDH1A1MAPT | |
| SCHEMBL954742 | 0.76 | HSD11B1 (0.45) | ALDH1A1MAPTRAB9AHSD11B1 | |
| SCHEMBL962452 | 0.76 | HSD11B1 (0.36) | ALDH1A1MAPTMEN1KMT2ATSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 52 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2244124-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-26 | — | — | EP | disclosed |
| EP-2244126-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-19 | — | — | EP | disclosed |
| EP-2000851-B1 | Photomask blank, resist pattern forming process, and photomask preparation process | SHINETSU CHEMICAL CO (JP) | 2015-07-29 | — | — | EP | disclosed |
| US-8968979-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-03 | — | — | US | disclosed |
| EP-2267533-B1 | Resist composition | SHINETSU CHEMICAL CO (JP) | 2014-10-22 | — | — | EP | disclosed |
| EP-2244125-B1 | Resist composition | SHINETSU CHEMICAL CO (JP) | 2014-10-08 | — | — | EP | disclosed |
| EP-2146245-B1 | Resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2014-06-25 | — | — | EP | disclosed |
| US-8592133-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-11-26 | — | — | US | disclosed |
| US-8586282-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-11-19 | — | — | US | disclosed |
| EP-2100887-B1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHINETSU CHEMICAL CO (JP) | 2013-07-03 | — | — | EP | disclosed |
| US-20080305411-A1 | PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-12-11 | — | — | US | disclosed |
| EP-2000851-A1 | Photomask blank, resist pattern forming process, and photomask preparation process | Shin-Etsu Chemical Co., Ltd. (JP) | 2008-12-10 | — | — | EP | disclosed |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-29 | — | — | US | disclosed |
| US-20080102407-A1 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080102405-A1 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-04-10 | — | — | US | disclosed |
| US-20080026331-A1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| US-20080008962-A1 | Polymerizable ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-10 | — | — | US | disclosed |
| US-20080008965-A1 | Ester compounds and their preparation, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-10 | — | — | US | disclosed |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-27 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080102405-A1 | Nitrogen-containing organic compound, resist composition and patterning process | MDM4, MUS81, NOP2 | ENPP3 1759/4885ENPP1 1979/4885ENPP2 4046/4885 |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, HCN4 | ENPP3 3688/4885ENPP1 4554/4885ENPP2 4089/4885 |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, TST | ENPP3 2036/4885ENPP1 3762/4885ENPP2 3607/4885 |
| US-20080008965-A1 | Ester compounds and their preparation, polymers, resist compositions and patterning process | ESR1, H1-2, H1-4 | ENPP3 1934/4885ENPP1 1843/4885ENPP2 2566/4885 |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | RER1, SCO2, ASIC3 | ENPP3 2511/4885ENPP1 3599/4885ENPP2 3871/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.