Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ENPP1 | P22413 | 3/20 | 0.43 |
| ▸ | GABRB1 | P18505 | 2/20 | 0.38 |
| ▸ | GABRB2 | P47870 | 2/20 | 0.38 |
| ▸ | ENPP3 | O14638 | 2/20 | 0.38 |
| ▸ | NPC1 | O15118 | 1/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.37 |
| ▸ | RECQL | P46063 | 1/20 | 0.37 |
| ▸ | RAB9A | P51151 | 1/20 | 0.37 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.36 |
| ▸ | MAPT | P10636 | 1/20 | 0.35 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.35 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.35 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.34 |
| ▸ | ENPP2 | Q13822 | 1/20 | 0.33 |
| ▸ | GABBR2 | O75899 | 1/20 | 0.33 |
| ▸ | GABBR1 | Q9UBS5 | 1/20 | 0.33 |
| ▸ | KAT6A | Q92794 | 3/20 | 0.33 |
| ▸ | CA2 | P00918 | 2/20 | 0.33 |
| ▸ | UTS2R | Q9UKP6 | 1/20 | 0.33 |
| ▸ | PLAU | P00749 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL963504 | 0.92 | GABRB1 (0.43) | ENPP1GABRB1GABRB2ENPP3NPC1 | |
| SCHEMBL962176 | 0.89 | MAPT (0.42) | NPC1ALDH1A1RECQLRAB9AMAPT | |
| SCHEMBL962244 | 0.82 | HSD11B1 (0.40) | NPC1ALDH1A1RECQLRAB9AMAPT | |
| SCHEMBL546783 | 0.80 | ENPP1 (0.41) | ENPP1GABRB1GABRB2ENPP3NPC1 | |
| SCHEMBL246107 | 0.80 | TSHR (0.40) | NPC1ALDH1A1RAB9AMAPTHSD11B1 | |
| SCHEMBL1673160 | 0.79 | KMT2A (0.35) | NPC1ALDH1A1RAB9AMAPTTDP1 | |
| SCHEMBL1671640 | 0.78 | PDCD1 (0.45) | MAPTCA2UTS2RCA1 | |
| SCHEMBL15209939 | 0.77 | ALDH1A1 (0.40) | NPC1ALDH1A1RAB9AMAPTL3MBTL1 | |
| SCHEMBL382734 | 0.77 | CES2 (0.42) | ENPP1GABRB1GABRB2ENPP3NPC1 | |
| SCHEMBL965161 | 0.76 | ENPP3 (0.41) | ENPP1ENPP3ALDH1A1RAB9AMAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 52 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2244124-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-26 | — | — | EP | disclosed |
| EP-2244126-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-19 | — | — | EP | disclosed |
| EP-2000851-B1 | Photomask blank, resist pattern forming process, and photomask preparation process | SHINETSU CHEMICAL CO (JP) | 2015-07-29 | — | — | EP | disclosed |
| US-8968979-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-03 | — | — | US | disclosed |
| EP-2267533-B1 | Resist composition | SHINETSU CHEMICAL CO (JP) | 2014-10-22 | — | — | EP | disclosed |
| EP-2244125-B1 | Resist composition | SHINETSU CHEMICAL CO (JP) | 2014-10-08 | — | — | EP | disclosed |
| EP-2146245-B1 | Resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2014-06-25 | — | — | EP | disclosed |
| US-8592133-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-11-26 | — | — | US | disclosed |
| US-8586282-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-11-19 | — | — | US | disclosed |
| EP-2100887-B1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHINETSU CHEMICAL CO (JP) | 2013-07-03 | — | — | EP | disclosed |
| US-20080305411-A1 | PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-12-11 | — | — | US | disclosed |
| EP-2000851-A1 | Photomask blank, resist pattern forming process, and photomask preparation process | Shin-Etsu Chemical Co., Ltd. (JP) | 2008-12-10 | — | — | EP | disclosed |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-29 | — | — | US | disclosed |
| US-20080102407-A1 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080102405-A1 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-04-10 | — | — | US | disclosed |
| US-20080026331-A1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| US-20080008962-A1 | Polymerizable ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-10 | — | — | US | disclosed |
| US-20080008965-A1 | Ester compounds and their preparation, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-10 | — | — | US | disclosed |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-27 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080102405-A1 | Nitrogen-containing organic compound, resist composition and patterning process | MDM4, MUS81, NOP2 | ENPP1 1979/4885GABRB1 2866/4885GABRB2 2725/4885 |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, HCN4 | ENPP1 4554/4885GABRB1 235/4885GABRB2 168/4885 |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, TST | ENPP1 3762/4885GABRB1 587/4885GABRB2 343/4885 |
| US-20080008965-A1 | Ester compounds and their preparation, polymers, resist compositions and patterning process | ESR1, H1-2, H1-4 | ENPP1 1843/4885GABRB1 3437/4885GABRB2 3489/4885 |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | RER1, SCO2, ASIC3 | ENPP1 3599/4885GABRB1 1306/4885GABRB2 1606/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.