SCHEMBL13683051

SCHEMBL13683051

CCC(C)(C)C(=O)OCCOCOc1ccc(OC(C)=O)cc1

nearest known ligand 0.40

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
ELANE P08246 5/20 0.40
LMNA P02545 1/20 0.39
KMT2A Q03164 2/20 0.38
L3MBTL1 Q9Y468 2/20 0.38
POLB P06746 2/20 0.36
MAPT P10636 2/20 0.36
PKM P14618 1/20 0.36
BCHE P06276 1/20 0.36
ESR1 P03372 1/20 0.35
HSD17B10 Q99714 1/20 0.35
ALDH1A1 P00352 2/20 0.35
HSP90AA1 P07900 1/20 0.34
GAA P10253 1/20 0.34
PPARA Q07869 1/20 0.34
TSHR P16473 1/20 0.34
MAPK1 P28482 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13683049 0.89 CYP3A4 (0.43) LMNAKMT2AL3MBTL1MAPTALDH1A1
SCHEMBL13683046 0.86 CHRM2 (0.41) ELANELMNABCHEESR1ALDH1A1
SCHEMBL13683037 0.86 MEN1 (0.47) LMNAKMT2AL3MBTL1MAPTALDH1A1
SCHEMBL13683041 0.85 TDP1 (0.44) PPARATSHR
SCHEMBL13683053 0.83 PTGS2 (0.38) LMNAESR1HSD17B10ALDH1A1PPARA
SCHEMBL13683058 0.83 NPC1 (0.46) LMNAMAPT
SCHEMBL13683066 0.81 PPARG (0.47) KMT2APOLBMAPTALDH1A1PPARA
SCHEMBL13563645 0.79 ELANE (0.58) ELANELMNAKMT2APOLBMAPT
SCHEMBL13683043 0.79 CHRNB2 (0.43) KMT2AL3MBTL1ALDH1A1TSHRMAPK1
SCHEMBL13683039 0.78 L3MBTL1 (0.50) LMNAKMT2AL3MBTL1POLBGAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7592118-B2 Addition polymer ; insoluble in alkali developer ; acid generator; microlithography, resolution sensitivity, accuracy pattern profile FUJIFILM CORPORATION (JP) 2009-09-22 US disclosed
US-20080241743-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed