Known targets — ChEMBL curated mechanism
ABCC8ACEADORA1ADORA2AADORA2BADORA3ALDH5A1ALOX5ALOX5APATP4AATP4BBRAFCA1CA12CA2CA4CYSLTR1DHFRDPEP1EDNRAEDNRBESR2F10FDPSFGF1GABBR1GABBR2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGARTGNRHRGSC1HMGCRIMPDH1IMPDH2KCNJ11LY96NOD2NR3C1NS3NS4ANS5bP2RY1P2RY12P2RY2P2RY4P2RY6PBP2XPDE3APDE3BPDE4APDE4BPDE4CPDE4DPDK1PDK2PDK3PDK4PPARGPPATPTGIRPTGS1PTGS2RAF1RYR1RYR3SCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASERPINC1SLC12A1SLC12A3SYKTHRATHRBTLR3TLR4TLR9TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYMSVKORC1XDHblablaIMP-1blaOXA-33blaOXA-58blaT-3blaT-4blaT-5blaT-6dacAdacBdacCfolAfolPfolP1ftsIfusAgaggyrAgyrBmecAmrcAmrcBmrdApbp1apbp1bpbp2pbp2apbp2bpbp3pbp4pbpApbpBpbpCpbpFpolponBrplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpoArpoBrpoCrpoZrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 17)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.44 |
| ▸ | GMNN | O75496 | 1/20 | 0.44 |
| ▸ | LMNA | P02545 | 1/20 | 0.44 |
| ▸ | TP53 | P04637 | 1/20 | 0.44 |
| ▸ | TSHR | P16473 | 1/20 | 0.44 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.44 |
| ▸ | THPO | P40225 | 1/20 | 0.44 |
| ▸ | HBB | P68871 | 1/20 | 0.44 |
| ▸ | PMP22 | Q01453 | 1/20 | 0.44 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.44 |
| ▸ | BBOX1 | O75936 | 3/20 | 0.42 |
| ▸ | MAPT | P10636 | 2/20 | 0.37 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.37 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.37 |
| ▸ | ENPEP | Q07075 | 1/20 | 0.35 |
| ▸ | POLB | P06746 | 1/20 | 0.30 |
| ▸ | HPGD | P15428 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL565085 | 1.00 | ALDH1A1 (0.44) | ALDH1A1GMNNLMNATP53TSHR | |
| SCHEMBL563942 | 0.87 | GMNN (0.41) | ALDH1A1GMNNLMNATP53TSHR | |
| SCHEMBL8459586 | 0.86 | KDM4E (0.40) | ALDH1A1GMNNLMNATP53TSHR | |
| SCHEMBL421602 | 0.85 | GMNN (0.52) | ALDH1A1GMNNLMNATP53TSHR | |
| SCHEMBL29623226 | 0.81 | GMNN (0.48) | ALDH1A1GMNNLMNATP53TSHR | |
| SCHEMBL3580301 | 0.81 | ALDH1A1 (0.48) | ALDH1A1GMNNLMNATP53TSHR | |
| Potassium Ion SCHEMBL10484570 | 0.80 | GMNN (0.46) | ALDH1A1GMNNLMNATP53TSHR | |
| SCHEMBL564573 | 0.78 | GMNN (0.50) | ALDH1A1GMNNLMNATP53TSHR | |
| Water SCHEMBL5356499 | 0.78 | GMNN (0.44) | ALDH1A1GMNNLMNATP53TSHR | |
| Potassium Ion SCHEMBL5693534 | 0.77 | BBOX1 (0.38) | ALDH1A1GMNNLMNATP53TSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20160168738-A1 | Additive for Reducing Voids after Annealing of Copper Plating with Through Silicon Via | SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) | 2016-06-16 | — | — | US | claimed |
| EP-4409058-B1 | COMPOSITION FOR COPPER ELECTRODEPOSITION COMPRISING A POLYAMINOAMIDE TYPE LEVELING AGENT | BASF SE (DE) | 2025-11-05 | — | — | EP | disclosed |
| EP-4165108-B1 | POLYALKANOLAMINES | BASF SE (DE) | 2024-03-13 | — | — | EP | disclosed |
| EP-3679179-B1 | COMPOSITION FOR METAL ELECTROPLATING COMPRISING LEVELING AGENT | BASF SE (DE) | 2023-10-11 | — | — | EP | disclosed |
| US-9856572-B2 | Additive for reducing voids after annealing of copper plating with through silicon via | SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) | 2018-01-02 | — | — | US | disclosed |
| US-20160168738-A1 | Additive for Reducing Voids after Annealing of Copper Plating with Through Silicon Via | SHANGHAI SINYANG SEMICONDUCTOR MATERIALS CO., LTD. (CN) | 2016-06-16 | — | — | US | disclosed |