Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HDAC3 | O15379 | 3/20 | 0.54 |
| ▸ | HDAC4 | P56524 | 3/20 | 0.54 |
| ▸ | HDAC1 | Q13547 | 3/20 | 0.54 |
| ▸ | HDAC7 | Q8WUI4 | 3/20 | 0.54 |
| ▸ | HDAC2 | Q92769 | 3/20 | 0.54 |
| ▸ | HDAC10 | Q969S8 | 3/20 | 0.54 |
| ▸ | HDAC11 | Q96DB2 | 3/20 | 0.54 |
| ▸ | HDAC8 | Q9BY41 | 3/20 | 0.54 |
| ▸ | HDAC6 | Q9UBN7 | 3/20 | 0.54 |
| ▸ | HDAC9 | Q9UKV0 | 3/20 | 0.54 |
| ▸ | HDAC5 | Q9UQL6 | 3/20 | 0.54 |
| ▸ | GSK3B | P49841 | 1/20 | 0.54 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.51 |
| ▸ | MAPT | P10636 | 2/20 | 0.50 |
| ▸ | LMNA | P02545 | 2/20 | 0.49 |
| ▸ | MEN1 | O00255 | 1/20 | 0.49 |
| ▸ | POLB | P06746 | 1/20 | 0.49 |
| ▸ | HTT | P42858 | 1/20 | 0.49 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.49 |
| ▸ | PDE4B | Q07343 | 1/20 | 0.49 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL686324 | 0.81 | GSK3B (0.50) | HDAC3HDAC4HDAC1HDAC7HDAC2 | |
| SCHEMBL2754884 | 0.81 | ERCC5 (0.54) | ALDH1A1POLBMMP1CA1CA2 | |
| Bromide SCHEMBL2521756 | 0.79 | GSK3B (0.48) | HDAC3HDAC4HDAC1HDAC7HDAC2 | |
| SCHEMBL106663 | 0.79 | NPC1 (0.48) | ALDH1A1MAPTLMNAPOLBHTT | |
| SCHEMBL10122612 | 0.77 | GSK3B (0.52) | GSK3BALDH1A1MAPTLMNAHTT | |
| SCHEMBL10122613 | 0.77 | GSK3B (0.52) | HDAC3HDAC4HDAC1HDAC7HDAC2 | |
| SCHEMBL2754883 | 0.77 | PARP10 (0.51) | ALDH1A1LMNAHTTKMT2ANPC1 | |
| SCHEMBL98167 | 0.77 | KMT2A (0.50) | HDAC3HDAC4HDAC1HDAC7HDAC2 | |
| SCHEMBL2184879 | 0.76 | NPC1 (0.48) | MAPTMEN1HTTKMT2ACES2 | |
| Hydrochloric Acid SCHEMBL4028699 | 0.75 | KMT2A (0.48) | GSK3BALDH1A1MAPTLMNAMEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 115 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230213861-A1 | METHOD FOR PRODUCING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-07-06 | — | — | US | disclosed |
| US-20220137512-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2022-05-05 | — | — | US | disclosed |
| EP-2550562-B1 | PATTERN FORMING METHOD AND RESIST COMPOSITION | FUJIFILM CORP (JP) | 2021-04-21 | — | — | EP | disclosed |
| EP-2539769-B1 | PATTERN FORMING METHOD AND RESIST COMPOSITION | FUJIFILM CORP (JP) | 2021-04-07 | — | — | EP | disclosed |
| US-20200369605-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-11-26 | — | — | US | disclosed |
| US-20200283400-A1 | EPOXY COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-09-10 | — | — | US | disclosed |
| US-10766992-B2 | Resin and resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2020-09-08 | — | — | US | disclosed |
| US-10377692-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2019-08-13 | — | — | US | disclosed |
| US-20190196328-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2019-06-27 | — | — | US | disclosed |
| EP-3205640-B1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2019-05-22 | — | — | EP | disclosed |
| US-20080076063-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-03-27 | — | — | US | disclosed |
| US-20080044738-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-02-21 | — | — | US | disclosed |
| US-7304175-B2 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-12-04 | — | — | US | disclosed |
| US-20070218401-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070184382-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-08-09 | — | — | US | disclosed |
| US-20070149702-A1 | Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED | 2007-06-28 | — | — | US | disclosed |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-31 | — | — | US | disclosed |
| US-20070100158-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-03 | — | — | US | disclosed |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-04-05 | — | — | US | disclosed |
| US-20070027336-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (9 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20200369605-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | PAG1, SLC6A5, LBR | HDAC3 2401/4885HDAC4 1296/4885HDAC1 543/4885 |
| US-20070027336-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SLC26A3, NHERF1, HCN4 | HDAC3 2315/4885HDAC4 3059/4885HDAC1 3259/4885 |
| US-20080044738-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | NHERF1, SLC26A3, HCN3 | HDAC3 2727/4885HDAC4 3911/4885HDAC1 3410/4885 |
| US-20200283400-A1 | EPOXY COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS | RER1, SLC11A2, EEF1A1 | HDAC3 4459/4885HDAC4 3863/4885HDAC1 3541/4885 |
| US-20080076063-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | SLC26A3, HCN3, NHERF1 | HDAC3 2359/4885HDAC4 3783/4885HDAC1 2760/4885 |
| US-20070122750-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN3, NHERF1, HCN4 | HDAC3 1314/4885HDAC4 2180/4885HDAC1 1829/4885 |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN4, HCN3, HCN1 | HDAC3 1462/4885HDAC4 2425/4885HDAC1 2353/4885 |
| US-10377692-B2 | Photoresist composition | C1R, C1S, F12 | HDAC3 3528/4885HDAC4 3983/4885HDAC1 2517/4885 |
| US-20070100158-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SLC26A3, RFC1, RFC2 | HDAC3 1429/4885HDAC4 2559/4885HDAC1 2221/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.