SCHEMBL407163

SCHEMBL407163

CCCCC(CC)C(=O)CC(=O)C(C)(C)C

nearest known ligand 0.53

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA2 P00918 8/20 0.53
MAPK1 P28482 2/20 0.53
CA1 P00915 5/20 0.53
USP2 O75604 1/20 0.41
MEN1 O00255 1/20 0.39
ALDH1A1 P00352 1/20 0.39
MAPT P10636 1/20 0.39
KMT2A Q03164 1/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
SLC1A3 P43003 1/20 0.38
SLC1A2 P43004 1/20 0.38
SLC1A1 P43005 1/20 0.38
LMNA P02545 1/20 0.37
CA7 P43166 1/20 0.37
CA14 Q9ULX7 1/20 0.37
TSHR P16473 2/20 0.36
L3MBTL1 Q9Y468 2/20 0.36
GAA P10253 1/20 0.35
XBP1 P17861 1/20 0.35
ATM Q13315 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31042227 0.98 CA2 (0.52) CA2MAPK1CA1USP2MEN1
SCHEMBL29190445 0.98 CA2 (0.52) CA2MAPK1CA1USP2MEN1
SCHEMBL27689591 0.98 CA2 (0.52) CA2MAPK1CA1USP2MEN1
SCHEMBL29153274 0.86 CA2 (0.64) CA2MAPK1CA1USP2MEN1
SCHEMBL409671 0.86 USP2 (0.39) CA2MAPK1CA1USP2SLC1A3
SCHEMBL6131028 0.84 CA2 (0.53) CA2MAPK1CA1USP2MEN1
SCHEMBL3964956 0.80 CA2 (0.57) CA2MAPK1CA1USP2MEN1
SCHEMBL31048063 0.78 CA2 (0.55) CA2MAPK1CA1USP2MEN1
SCHEMBL410901 0.78 CA2 (0.55) CA2MAPK1CA1USP2MEN1
SCHEMBL10031685 0.77 CA2 (0.64) CA2MAPK1CA1USP2MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 193 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12630570-B2 Organometallic adduct compound and method of manufacturing integrated circuit device by using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-05-19 US disclosed
EP-4130010-B1 ZINC COMPOUND, RAW MATERIAL FOR THIN FILM FORMATION, THIN FILM, AND METHOD FOR PRODUCING THIN FILM ADEKA CORP (JP) 2026-04-29 EP disclosed
EP-4067365-B1 COMPOUND, THIN FILM-FORMING MATERIAL, AND METHOD FOR PRODUCING THIN FILM ADEKA CORP (JP) 2026-03-25 EP disclosed
US-12577660-B2 Compound, thin-film forming raw material, thin-film, and method of producing thin-film ADEKA CORPORATION (JP) 2026-03-17 US disclosed
US-20260055506-A1 HALOGEN COMPOUND ADEKA CORPORATION (JP) 2026-02-26 US disclosed
US-20260055507-A1 THIN-FILM FORMING RAW MATERIAL, THIN-FILM AND METHOD OF PRODUCING THIN-FILM ADEKA CORPORATION (JP) 2026-02-26 US disclosed
US-12516415-B2 Reactive material and method of producing thin-film ADEKA CORPORATION (JP) 2026-01-06 US disclosed
US-12509764-B2 Thin-film forming raw material used in atomic layer deposition method, and method of producing thin-film ADEKA CORPORATION (JP) 2025-12-30 US disclosed
EP-4660187-A1 COMPOUND, RAW MATERIAL FOR THIN FILM FORMATION, THIN FILM, AND METHOD FOR PRODUCING THIN FILM ADEKA CORPORATION (JP) 2025-12-10 EP disclosed
US-12486573-B2 Thin-film forming raw material, thin-film and method of producing thin-film ADEKA CORPORATION (JP) 2025-12-02 US disclosed
US-7501153-B2 Alkoxide compound, thin film-forming material and method for forming thin film ADEKA CORPORATION (JP) 2009-03-10 US disclosed
US-20090035464-A1 Alkoxide compound, material for thin film formation, and process for thin film formation ADEKA CORPORATION (JP) 2009-02-05 US disclosed
US-20080085365-A1 Alkoxide Compound, Thin Film-Forming Material And Method For Forming Thin Film ADEKA CORPORATION (JP) 2008-04-10 US disclosed
US-7335783-B2 Thin film-forming material and method for producing thin film ADEKA CORPORATION (JP) 2008-02-26 US disclosed
JP-2007254298-A RAW MATERIAL FOR FORMING THIN FILM AND METHOD FOR PRODUCING THIN FILM ADEKA CORP 2007-10-04 JP disclosed
US-20070190249-A1 Material for chemical vapor deposition and thin film forming method ADEKA CORPORATION (JP) 2007-08-16 US disclosed
US-20070178235-A1 Thin film-forming material and method for producing thin film ADEKA CORPORATION (JP) 2007-08-02 US disclosed
EP-1770187-A1 THIN FILM-FORMING MATERIAL AND METHOD FOR PRODUCING THIN FILM Adeka Corporation (JP) 2007-04-04 EP disclosed
EP-1754800-A1 MATERIAL FOR CHEMICAL VAPOR DEPOSITION AND THIN FILM FORMING METHOD Adeka Corporation (JP) 2007-02-21 EP disclosed
WO-2006021850-A2 CVD PRECURSOR SOLUTION USED FOR PRODUCTION OF A THIN FILM COMPRISING A LANTHANIDE SERIES METAL AND A THIN FILM PRODUCING METHOD USING THE SAME TOSHIMA MFG. CO. LTD. (JP) 2006-03-02 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260055506-A1 HALOGEN COMPOUND SLC9A2, SLC9A1, SLC9B2 CA2 951/4885MAPK1 833/4885CA1 1083/4885
US-20090035464-A1 Alkoxide compound, material for thin film formation, and process for thin film formation ALKBH5, ALKBH3, ALK CA2 3585/4885MAPK1 2319/4885CA1 2755/4885
US-12509764-B2 Thin-film forming raw material used in atomic layer deposition method, and method of producing thin-film FTO, NOS1, NOS3 CA2 3285/4885MAPK1 3034/4885CA1 2531/4885
US-12630570-B2 Organometallic adduct compound and method of manufacturing integrated circuit device by using the same C5, AFF2, AFF4 CA2 1280/4885MAPK1 1872/4885CA1 2146/4885
US-20260055507-A1 THIN-FILM FORMING RAW MATERIAL, THIN-FILM AND METHOD OF PRODUCING THIN-FILM TMEM109, FTO, YTHDF2 CA2 3633/4885MAPK1 1447/4885CA1 3150/4885
US-12577660-B2 Compound, thin-film forming raw material, thin-film, and method of producing thin-film METTL14, YTHDF2, YTHDF1 CA2 2392/4885MAPK1 3423/4885CA1 1085/4885
US-20080085365-A1 Alkoxide Compound, Thin Film-Forming Material And Method For Forming Thin Film APOB, C9, C5 CA2 2099/4885MAPK1 4227/4885CA1 2792/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.