Known targets — ChEMBL curated mechanism
CHRM1CHRM2CHRM3CHRM4CHRM5SLC6A2dacAdacBdacCftsImrcAmrcBmrdA
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | BCHE | P06276 | 1/20 | 0.38 |
| ▸ | ACHE | P22303 | 1/20 | 0.38 |
| ▸ | LMNA | P02545 | 3/20 | 0.38 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.38 |
| ▸ | CA12 | O43570 | 4/20 | 0.37 |
| ▸ | CA9 | Q16790 | 4/20 | 0.37 |
| ▸ | CA1 | P00915 | 3/20 | 0.37 |
| ▸ | CA2 | P00918 | 3/20 | 0.37 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.36 |
| ▸ | CYP2D6 | P10635 | 2/20 | 0.36 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.36 |
| ▸ | THPO | P40225 | 1/20 | 0.36 |
| ▸ | HTT | P42858 | 2/20 | 0.36 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.36 |
| ▸ | GAA | P10253 | 4/20 | 0.36 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.36 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.36 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.36 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.36 |
| ▸ | HPGD | P15428 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL31072151 | 1.00 | BCHE (0.38) | BCHEACHELMNATDP1CA12 | |
| SCHEMBL4585181 | 0.94 | LMNA (0.40) | BCHEACHELMNATDP1CYP3A4 | |
| SCHEMBL4861374 | 0.84 | RAPGEF4 (0.40) | BCHEACHELMNATDP1CA12 | |
| SCHEMBL3127290 | 0.83 | CA12 (0.40) | BCHEACHELMNATDP1CA12 | |
| SCHEMBL7133269 | 0.82 | CA12 (0.47) | BCHEACHELMNATDP1CA12 | |
| SCHEMBL64189 | 0.82 | CA12 (0.47) | BCHEACHELMNATDP1CA12 | |
| SCHEMBL3759626 | 0.82 | TSHR (0.35) | ACHELMNACYP1A2ALOX12 | |
| SCHEMBL2964104 | 0.81 | CA12 (0.46) | BCHEACHELMNATDP1CA12 | |
| SCHEMBL3144525 | 0.81 | CA12 (0.46) | BCHEACHELMNATDP1CA12 | |
| P-Xylene SCHEMBL3404430 | 0.81 | GAA (0.46) | BCHEACHELMNATDP1CA12 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 114 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250346723-A1 | TELLURIUM-CONTAINING POLYMER AND COMPOUND | THE SCHOOL CORPORATION KANSAI UNIV (JP) | 2025-11-13 | — | — | US | disclosed |
| WO-2025005020-A1 | LITHOGRAPHY FILM-FORMING COMPOSITION, LITHOGRAPHY UNDERLAYER FILM, AND RESIST PATTERN FORMING METHOD | 学校法人 関西大学 | 2025-01-02 | — | — | WO | disclosed |
| WO-2024224654-A1 | POLY-ARM-TYPE RESIN HAVING POLYAMIDE STRUCTURE OR HETEROCYCLIC STRUCTURE, LITHOGRAPHY FILM-FORMING COMPOSITION CONTAINING SAME, AND PRODUCTION METHOD | 学校法人 関西大学 | 2024-10-31 | — | — | WO | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| WO-2023214589-A1 | TELLURIUM-CONTAINING POLYMER AND COMPOUND | 学校法人 関西大学 | 2023-11-09 | — | — | WO | disclosed |
| US-20230333469-A1 | FILM FORMING COMPOSITION FOR LITHOGRAPHY, RESIST PATTERN FORMATION METHOD, AND CIRCUIT PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-10-19 | — | — | US | disclosed |
| US-20230185191-A1 | COMPOUND, PRODUCTION METHOD THEREFOR, ACID GENERATOR, COMPOSITION, RESIST FILM, UNDERLAYER FILM, PATTERN FORMATION METHOD, AND OPTICAL COMPONENT | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-06-15 | — | — | US | disclosed |
| US-20230174688-A1 | COMPOUND, (CO)POLYMER, COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR PRODUCING COMPOUND, AND METHOD FOR PRODUCING (CO)POLYMER | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-06-08 | — | — | US | disclosed |
| CN-115836045-A | Composition for forming photoresist, method for forming resist pattern, and method for forming circuit pattern | 三菱瓦斯化学株式会社 | 2023-03-21 | — | — | CN | disclosed |
| CN-115605517-A | Compound, (co) polymer, composition, resist pattern forming method, and method for producing compound and (co) polymer | 三菱瓦斯化学株式会社（JP） | 2023-01-13 | — | — | CN | disclosed |
| EP-2474518-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2012-07-11 | — | — | EP | disclosed |
| EP-2474565-A1 | CYCLIC COMPOUND, MANUFACTURING METHOD THEREFOR, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING A RESIST PATTERN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2012-07-11 | — | — | EP | disclosed |
| US-20120171615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-07-05 | — | — | US | disclosed |
| US-20120171379-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-07-05 | — | — | US | disclosed |
| US-20120164576-A1 | CYCLIC COMPOUND, PROCESS FOR PREPARATION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120164575-A1 | CYCLIC COMPOUND, MANUFACTURING METHOD THEREFOR, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING A RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120156615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-21 | — | — | US | disclosed |
| US-8110334-B2 | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-02-07 | — | — | US | disclosed |
| US-20100047709-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2010-02-25 | — | — | US | disclosed |
| EP-2080750-A1 | RADIATION-SENSITIVE COMPOSITION | Mitsubishi Gas Chemical Company, Inc. (JP) | 2009-07-22 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (10 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20250346723-A1 | TELLURIUM-CONTAINING POLYMER AND COMPOUND | TEX10, TEX13A, RNF4 | BCHE 3378/4885ACHE 2623/4885LMNA 3445/4885 |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | BCHE 613/4885ACHE 1890/4885LMNA 772/4885 |
| US-20230185191-A1 | COMPOUND, PRODUCTION METHOD THEREFOR, ACID GENERATOR, COMPOSITION, RESIST FILM, UNDERLAYER FILM, PATTERN FORMATION METHOD, AND OPTICAL COMPONENT | SOAT2, SOAT1, FAR1 | BCHE 1520/4885ACHE 2426/4885LMNA 2297/4885 |
| US-20230174688-A1 | COMPOUND, (CO)POLYMER, COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR PRODUCING COMPOUND, AND METHOD FOR PRODUCING (CO)POLYMER | MCCC2, MMAB, INTS9 | BCHE 2953/4885ACHE 4368/4885LMNA 4013/4885 |
| US-20120171379-A1 | RADIATION-SENSITIVE COMPOSITION | PARG, RAD51, SRMS | BCHE 4482/4885ACHE 4830/4885LMNA 469/4885 |
| US-20100047709-A1 | RADIATION-SENSITIVE COMPOSITION | C1S, C9, RAD51 | BCHE 4597/4885ACHE 4853/4885LMNA 286/4885 |
| US-20120156615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | RAD1, CCNE1, CCNA1 | BCHE 3131/4885ACHE 4531/4885LMNA 559/4885 |
| US-20120171615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | RAD1, CCNE1, CCNA1 | BCHE 3131/4885ACHE 4531/4885LMNA 559/4885 |
| US-20120164576-A1 | CYCLIC COMPOUND, PROCESS FOR PREPARATION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | RAD1, RER1, REV1 | BCHE 3844/4885ACHE 4609/4885LMNA 298/4885 |
| US-20120164575-A1 | CYCLIC COMPOUND, MANUFACTURING METHOD THEREFOR, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING A RESIST PATTERN | WEE1, SLC11A2, RAD1 | BCHE 3515/4885ACHE 4708/4885LMNA 761/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.