Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP19A1 | P11511 | 2/20 | 0.33 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.33 |
| ▸ | NAAA | Q02083 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.31 |
| ▸ | CYP17A1 | P05093 | 1/20 | 0.31 |
| ▸ | EPHX2 | P34913 | 3/20 | 0.30 |
| ▸ | CA12 | O43570 | 1/20 | 0.30 |
| ▸ | CA2 | P00918 | 1/20 | 0.30 |
| ▸ | CA7 | P43166 | 1/20 | 0.30 |
| ▸ | CA9 | Q16790 | 1/20 | 0.30 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.30 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27673001 | 0.85 | OPRM1 (0.36) | CYP19A1HSD17B10NAAAALDH1A1EPHX2 | |
| SCHEMBL5511555 | 0.84 | ALDH1A1 (0.37) | CYP19A1HSD17B10NAAAALDH1A1EPHX2 | |
| SCHEMBL548175 | 0.81 | EPHX2 (0.32) | ALDH1A1EPHX2 | |
| SCHEMBL2812415 | 0.80 | NAAA (0.35) | HSD17B10NAAAALDH1A1EPHX2NPSR1 | |
| SCHEMBL27659428 | 0.80 | NAAA (0.35) | CYP19A1HSD17B10NAAAALDH1A1EPHX2 | |
| SCHEMBL2184378 | 0.78 | HSD17B10 (0.35) | HSD17B10NAAAALDH1A1EPHX2NPSR1 | |
| SCHEMBL5917734 | 0.78 | EPHX2 (0.32) | CYP19A1HSD17B10NAAAALDH1A1EPHX2 | |
| SCHEMBL5917758 | 0.77 | THRB (0.37) | HSD17B10NAAAALDH1A1NPSR1 | |
| SCHEMBL7749055 | 0.77 | SCN1A (0.46) | CYP19A1ALDH1A1CYP17A1NPSR1 | |
| SCHEMBL5359724 | 0.75 | NAAA (0.33) | HSD17B10NAAANPSR1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 66 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-20230348351-A1 | COMPOUND, POLYMER, COMPOSITION, COMPOSITION FOR FILM FORMATION, PATTERN FORMATION METHOD, INSULATING FILM FORMATION METHOD, AND METHOD FOR PRODUCING COMPOUND | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-11-02 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11256170-B2 | Compound, resist composition, and method for forming resist pattern using it | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-22 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| US-11204552-B2 | Radiation-sensitive composition, pattern-forming method and radiation-sensitive acid generating agent | JSR CORPORATION (JP) | 2021-12-21 | — | — | US | disclosed |
| US-20210309595-A1 | COMPOSITION FOR FORMING OPTICAL COMPONENT, OPTICAL COMPONENT, COMPOUND, AND RESIN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-10-07 | — | — | US | disclosed |
| US-11130724-B2 | Compound, resin, composition, resist pattern formation method, and circuit pattern formation method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-09-28 | — | — | US | disclosed |
| EP-3831882-A1 | OPTICAL COMPONENT-FORMING COMPOSITION, OPTICAL COMPONENT, COMPOUND, AND RESIN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-06-09 | — | — | EP | disclosed |
| EP-3279727-B1 | COMPOUND, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING IT | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-06-09 | — | — | EP | disclosed |
| US-20100047709-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2010-02-25 | — | — | US | disclosed |
| CN-101650531-A | Calixarene compound, photoresist base material and composition thereof | IDEMITSU KOSAN CO JP | 2010-02-17 | — | — | CN | disclosed |
| CN-100565338-C | What comprise the Photoactive compounds potpourri is used for the lithographic photoetching compositions of deep ultraviolet | AZ ELECTRONIC MATERIALS JAPAN (JP) | 2009-12-02 | — | — | CN | disclosed |
| EP-2080750-A1 | RADIATION-SENSITIVE COMPOSITION | Mitsubishi Gas Chemical Company, Inc. (JP) | 2009-07-22 | — | — | EP | disclosed |
| CN-1938259-A | Calixarene compound, photoresist base material and composition thereof | IDEMITSU KOSAN CO (JP) | 2007-03-28 | — | — | CN | disclosed |
| US-7193106-B2 | Halogenoacetoxyadamantane derivatives and process for production thereof | IDEMITSU KOSAN CO., LTD. (JP) | 2007-03-20 | — | — | US | disclosed |
| CN-1809789-A | Photoresist composition for deep ultraviolet lithography | AZ ELECTRONIC MATERIALS USA (US) | 2006-07-26 | — | — | CN | disclosed |
| US-20050258395-A1 | Halogenoacetoxyadamantane derivatives and process for production thereof | IDEMITSU KOSAN CO., LTD. (JP) | 2005-11-24 | — | — | US | disclosed |
| CN-1659477-A | Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds | AZ ELECTRONIC MATERIALS USA (JP) | 2005-08-24 | — | — | CN | disclosed |
| EP-1516867-A1 | HALOGENOACETOXYADAMANTANE DERIVATIVES AND PROCESS FOR PRODUCTION THEREOF | IDEMITSU KOSAN CO., LTD. (JP) | 2005-03-23 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (9 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | CYP19A1 3684/4885HSD17B10 3831/4885NAAA 1625/4885 |
| US-11256170-B2 | Compound, resist composition, and method for forming resist pattern using it | RDX, SLC11A2, FBL | CYP19A1 1295/4885HSD17B10 1942/4885NAAA 1768/4885 |
| US-20230348351-A1 | COMPOUND, POLYMER, COMPOSITION, COMPOSITION FOR FILM FORMATION, PATTERN FORMATION METHOD, INSULATING FILM FORMATION METHOD, AND METHOD FOR PRODUCING COMPOUND | PHOSPHO1, RER1, RIF1 | CYP19A1 445/4885HSD17B10 2236/4885NAAA 559/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | CYP19A1 2704/4885HSD17B10 1651/4885NAAA 2016/4885 |
| US-20100047709-A1 | RADIATION-SENSITIVE COMPOSITION | C1S, C9, RAD51 | CYP19A1 1447/4885HSD17B10 3495/4885NAAA 3153/4885 |
| US-11204552-B2 | Radiation-sensitive composition, pattern-forming method and radiation-sensitive acid generating agent | NOS1, ADCY1, IFNAR1 | CYP19A1 1430/4885HSD17B10 4080/4885NAAA 1393/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | CYP19A1 2704/4885HSD17B10 1651/4885NAAA 2016/4885 |
| US-11130724-B2 | Compound, resin, composition, resist pattern formation method, and circuit pattern formation method | RER1, NBAS, INTS9 | CYP19A1 1576/4885HSD17B10 552/4885NAAA 2691/4885 |
| US-20210309595-A1 | COMPOSITION FOR FORMING OPTICAL COMPONENT, OPTICAL COMPONENT, COMPOUND, AND RESIN | DCXR, MLX, TXN | CYP19A1 1678/4885HSD17B10 2952/4885NAAA 3866/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.