Predicted protein targets (top 15)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CES1 | P23141 | 7/20 | 0.45 |
| ▸ | CPA1 | P15085 | 1/20 | 0.41 |
| ▸ | CA2 | P00918 | 1/20 | 0.38 |
| ▸ | CA4 | P22748 | 1/20 | 0.38 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.36 |
| ▸ | CYP2D6 | P10635 | 2/20 | 0.36 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.36 |
| ▸ | TSHR | P16473 | 1/20 | 0.36 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.36 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.34 |
| ▸ | FAAH | O00519 | 3/20 | 0.34 |
| ▸ | HDAC6 | Q9UBN7 | 1/20 | 0.34 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.34 |
| ▸ | CES2 | O00748 | 1/20 | 0.33 |
| ▸ | SRC | P12931 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Tetraphenylphosphonium SCHEMBL4388860 | 0.84 | CA2 (0.46) | CES1CA2CA4CYP1A2CYP2D6 | |
| Tetraphenylphosphonium SCHEMBL21957826 | 0.83 | CYP1A2 (0.40) | CES1CA2CA4CYP1A2CYP2D6 | |
| Tetraphenylphosphonium SCHEMBL1155888 | 0.81 | CA2 (0.44) | CES1CA2CA4CYP1A2CYP2D6 | |
| SCHEMBL18695610 | 0.81 | CES1 (0.39) | CES1CPA1CA2CA4CYP1A2 | |
| Tetraphenylphosphonium SCHEMBL1037056 | 0.79 | CA2 (0.42) | CES1CA2CA4CYP1A2CYP2D6 | |
| Tetraphenylphosphonium SCHEMBL21957839 | 0.79 | CA4 (0.55) | CES1CPA1CA2CA4CYP1A2 | |
| Trifluoroacetic Acid SCHEMBL10954936 | 0.79 | CYP2D6 (0.43) | CES1CPA1CYP1A2CYP2D6ALDH1A1 | |
| Trifluoroacetic Acid SCHEMBL10946380 | 0.77 | CES1 (0.48) | CES1CPA1CA2CA4PTPN1 | |
| Tetraphenylphosphonium SCHEMBL7944626 | 0.77 | CA2 (0.41) | CES1CA2CA4CYP1A2CYP2D6 | |
| Tetraphenylphosphonium SCHEMBL21957776 | 0.77 | ALDH1A1 (0.52) | CES1CA2CA4CYP1A2CYP2D6 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 77 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| EP-4621486-A2 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-24 | — | — | EP | disclosed |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-18 | — | — | US | disclosed |
| EP-4592299-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-30 | — | — | EP | disclosed |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-24 | — | — | US | disclosed |
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| US-12332565-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| EP-4539986-A2 | CATALYTIC SYSTEM CONTAINING IONIC LIQUIDS AND A PROCESS FOR PRODUCING HYDROGEN FROM PLASTIC MATERIALS USING SAID CATALYTIC SYSTEM | Fundación Centro de Investigación Cooperativa de Energías Alternativas, CIC Energigune Fundazioa (ES) | 2025-04-23 | — | — | EP | disclosed |
| EP-0834495-B1 | Process for preparing diaryl carbonate | UBE INDUSTRIES (JP) | 2000-12-27 | — | — | EP | disclosed |
| US-5892091-A | PHOSPHOROUS CATALYSTS AND HALOGEN ATOMS | UBE INDUSTRIES, LTD. (JP) | 1999-04-06 | — | — | US | disclosed |
| US-5892089-A | FROM DIARYL OXALATE IN LIQUID PHASE BY DECARBONYLATION USING ORGANIC PHOSHORUS COMPOUND CATALYST | UBE INDUSTRIES, LTD. (JP) | 1999-04-06 | — | — | US | disclosed |
| EP-0737665-B1 | Process for preparation of diaryl carbonate | UBE INDUSTRIES (JP) | 1998-10-21 | — | — | EP | disclosed |
| US-5792883-A | Preparation of diaryl carbonate | UBE INDUSTRIES, LTD. (JP) | 1998-08-11 | — | — | US | disclosed |
| EP-0834496-A1 | Preparation of diaryl carbonate | UBE INDUSTRIES, LTD. (JP) | 1998-04-08 | — | — | EP | disclosed |
| EP-0834495-A1 | Process for preparing diaryl carbonate | UBE INDUSTRIES, LTD. (JP) | 1998-04-08 | — | — | EP | disclosed |
| EP-0826658-A1 | Catalyst for decarbonylation reaction | UBE INDUSTRIES, LTD. (JP) | 1998-03-04 | — | — | EP | disclosed |
| US-5648510-A | DECARBONYLATION OF OXALATE | UBE INDUSTRIES, LTD. (JP) | 1997-07-15 | — | — | US | disclosed |
| EP-0737665-A1 | Process for preparation of diaryl carbonate | UBE INDUSTRIES, LTD. (JP) | 1996-10-16 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SMC1A, CDH1, SMC4 | CES1 1861/4885CPA1 1713/4885CA2 3442/4885 |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | ASH2L, PUF60, IDUA | CES1 4246/4885CPA1 3454/4885CA2 1064/4885 |
| US-12332565-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | RPS4X, SIK3, MLX | CES1 3631/4885CPA1 3961/4885CA2 2255/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | CES1 2618/4885CPA1 1467/4885CA2 2902/4885 |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | CES1 3024/4885CPA1 4289/4885CA2 2105/4885 |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SMURF1, OSR1, SIK1 | CES1 3505/4885CPA1 3186/4885CA2 972/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.