Known targets — ChEMBL curated mechanism
ABCC8ACEADORA1ADORA2AADORA2BADORA3ALDH5A1ALOX5ALOX5APATP4AATP4BBRAFCA1CA12CA2CA4CYSLTR1DHFRDPEP1EDNRAEDNRBESR2F10FDPSFGF1GABBR1GABBR2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGARTGNRHRGSC1HMGCRIMPDH1IMPDH2KCNJ11LY96NOD2NR3C1NS3NS4ANS5bP2RY1P2RY12P2RY2P2RY4P2RY6PBP2XPDE3APDE3BPDE4APDE4BPDE4CPDE4DPDK1PDK2PDK3PDK4PPARGPPATPTGIRPTGS1PTGS2RAF1RYR1RYR3SCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASERPINC1SLC12A1SLC12A3SYKTHRATHRBTLR3TLR4TLR9TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYMSVKORC1XDHblablaIMP-1blaOXA-33blaOXA-58blaT-3blaT-4blaT-5blaT-6dacAdacBdacCfolAfolPfolP1ftsIfusAgaggyrAgyrBmecAmrcAmrcBmrdApbp1apbp1bpbp2pbp2apbp2bpbp3pbp4pbpApbpBpbpCpbpFpolponBrplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpoArpoBrpoCrpoZrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL893129 | 0.78 | ALDH1A1 (0.30) | — | |
| SCHEMBL4539307 | 0.77 | — | — | |
| SCHEMBL6063771 | 0.73 | — | — | |
| SCHEMBL4539299 | 0.71 | — | — | |
| SCHEMBL6725199 | 0.71 | CA4 (0.30) | — | |
| SCHEMBL5946667 | 0.65 | CA4 (0.34) | — | |
| SCHEMBL892910 | 0.63 | USP2 (0.30) | — | |
| SCHEMBL587187 | 0.62 | CA2 (0.31) | — | |
| SCHEMBL7513032 | 0.62 | ALDH1A1 (0.32) | — | |
| SCHEMBL33346 | 0.61 | CA2 (0.32) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 42 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8084367-B2 | Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods | SAMSUNG ELECTRONICS CO., LTD (KR) | 2011-12-27 | — | — | US | claimed |
| US-20070293054-A1 | ETCHING, CLEANING AND DRYING METHODS USING SUPERCRITICAL FLUID AND CHAMBER SYSTEMS USING THESE METHODS | SAMSUNG ELECTRONICS CO., LTD. | 2007-12-20 | — | — | US | claimed |
| US-7002044-B2 | Catalysis by water-soluble organometallic complexes in water-in-densified fluid microemulsions | THE UNIVERSITY OF CONNECTICUT (US) | 2006-02-21 | — | — | US | claimed |
| US-20040097761-A1 | Catalysis by water-soluble organometallic complexes in water-in-densified fluid microemulsions | CONNECTICUT, THE UNIVERSITY OF | 2004-05-20 | — | — | US | claimed |
| US-10155903-B2 | Metal etchant compositions and methods of fabricating a semiconductor device using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-12-18 | — | — | US | disclosed |
| US-20160204001-A1 | METAL ETCHANT COMPOSITIONS AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME | LEE HYOSAN (KR) | 2016-07-14 | — | — | US | disclosed |
| US-20150368557-A1 | METAL ETCHANT COMPOSITIONS AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME | CORNELL UNIVERSITY | 2015-12-24 | — | — | US | disclosed |
| US-8951383-B2 | Apparatus for treating wafers using supercritical fluid | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-02-10 | — | — | US | disclosed |
| US-8790470-B2 | Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2014-07-29 | — | — | US | disclosed |
| US-8585917-B2 | Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-11-19 | — | — | US | disclosed |
| US-20120085495-A1 | ETCHING, CLEANING AND DRYING METHODS USING SUPERCRITICAL FLUID AND CHAMBER SYSTEMS USING THESE METHODS | LEE HYO-SAN (US) | 2012-04-12 | — | — | US | disclosed |
| US-20120080059-A1 | ETCHING, CLEANING AND DRYING METHODS USING SUPERCRITICAL FLUID AND CHAMBER SYSTEMS USING THESE METHODS | LEE HYO-SAN (US) | 2012-04-05 | — | — | US | disclosed |
| US-5508149-A | FOR USE IN PREPARING A COLOR PROOF IMAGE FROM HALFTONE IMAGE INFORMATION; REFLECTION DENSITY | KONICA CORPORATION (JP) | 1996-04-16 | — | — | US | disclosed |
| US-5464732-A | Non-fogging | KONICA CORPORATION (JP) | 1995-11-07 | — | — | US | disclosed |
| EP-0628866-A1 | A silver halide color photographic light-sensitive material | KONICA CORPORATION (JP) | 1994-12-14 | — | — | EP | disclosed |
| US-5362626-A | Support, silver chlorobromide emulsion layer with grains at least 95 mol % silver chloride, gelatin with 0.5-5 ppm iron ion and at least 40 % by weight of alpha-constituent having weight-average molecular weight of 80,000-120,000 | KONICA CORPORATION (JP) | 1994-11-08 | — | — | US | disclosed |
| EP-0600450-A1 | A Silver halide color photographic light-sensitive material and a method for forming a color image by using the same | KONICA CORPORATION (JP) | 1994-06-08 | — | — | EP | disclosed |
| EP-0593180-A1 | A silver halide photographic light-sensitive material | KONICA CORPORATION (JP) | 1994-04-20 | — | — | EP | disclosed |
| EP-0551994-A1 | Silver halide photographic light-sensitive material | KONICA CORPORATION (JP) | 1993-07-21 | — | — | EP | disclosed |
| EP-0549175-A1 | Method of forming a color image | KONICA CORPORATION (JP) | 1993-06-30 | — | — | EP | disclosed |