Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CES2 | O00748 | 3/20 | 0.47 |
| ▸ | CES1 | P23141 | 3/20 | 0.47 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.41 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.41 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.41 |
| ▸ | TSHR | P16473 | 1/20 | 0.41 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.41 |
| ▸ | ALPL | P05186 | 1/20 | 0.40 |
| ▸ | POLB | P06746 | 1/20 | 0.40 |
| ▸ | ALPG | P10696 | 1/20 | 0.40 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.39 |
| ▸ | MAPT | P10636 | 1/20 | 0.39 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.39 |
| ▸ | PKM | P14618 | 1/20 | 0.39 |
| ▸ | HDAC3 | O15379 | 1/20 | 0.38 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.38 |
| ▸ | HDAC1 | Q13547 | 1/20 | 0.38 |
| ▸ | HDAC7 | Q8WUI4 | 1/20 | 0.38 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.38 |
| ▸ | HDAC10 | Q969S8 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Tetraphenylphosphonium SCHEMBL7619517 | 0.89 | CES2 (0.39) | CES2CES1CYP1A2ALDH1A1CYP2D6 | |
| Tetraphenylphosphonium SCHEMBL21957727 | 0.86 | HDAC3 (0.54) | CES2CES1CYP1A2ALDH1A1CYP2D6 | |
| Propionic Acid SCHEMBL11169478 | 0.85 | CES2 (0.45) | CES2CES1CYP1A2ALDH1A1CYP2D6 | |
| Tetraphenylphosphonium SCHEMBL7944619 | 0.84 | HDAC3 (0.48) | CES2CES1CYP1A2ALDH1A1CYP2D6 | |
| Tetraphenylphosphonium SCHEMBL28624629 | 0.84 | CYP1A2 (0.47) | CES2CES1CYP1A2ALDH1A1CYP2D6 | |
| Tetraphenylphosphonium SCHEMBL1037056 | 0.84 | CA2 (0.42) | CES2CES1CYP1A2ALDH1A1CYP2D6 | |
| Tetraphenylphosphonium SCHEMBL4388860 | 0.84 | CA2 (0.46) | CES2CES1CYP1A2ALDH1A1CYP2D6 | |
| Propionic Acid SCHEMBL1399930 | 0.83 | CYP1A2 (0.47) | CES2CES1CYP1A2ALDH1A1CYP2D6 | |
| Tetraphenylphosphonium SCHEMBL21957717 | 0.83 | ALDH1A1 (0.45) | CES2CES1CYP1A2ALDH1A1CYP2D6 | |
| Tetraphenylphosphonium SCHEMBL7944626 | 0.82 | CA2 (0.41) | CES2CES1CYP1A2ALDH1A1CYP2D6 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 73 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| EP-4621486-A2 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-24 | — | — | EP | disclosed |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-18 | — | — | US | disclosed |
| EP-4592299-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-30 | — | — | EP | disclosed |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-24 | — | — | US | disclosed |
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| US-12332565-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| CN-112526822-B | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2025-02-28 | — | — | CN | disclosed |
| CN-111208710-A | Iodine-containing thermosetting silicon-containing material, resist underlayer film-forming composition for extreme ultraviolet lithography containing the same, and pattern formation method | 信越化学工业株式会社 | 2020-05-29 | — | — | CN | disclosed |
| EP-3657254-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2020-05-27 | — | — | EP | disclosed |
| CN-111194330-A | Improved method for modifying polycarbonate during melt polymerization | 沙特基础工业全球技术有限公司 | 2020-05-22 | — | — | CN | disclosed |
| US-20200159120-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-05-21 | — | — | US | disclosed |
| CN-110678255-A | Oligomerization apparatus with improved mixing performance | 沙特基础工业全球技术有限公司 | 2020-01-10 | — | — | CN | disclosed |
| US-6131226-A | 2-SUBSTITUTED,3,5-BIS(METHOXYCARBONYL),4-(2,6-DIHALOPHENYL), 6-(1-((SUBSTITUTED)RING)PIPERAZIN-1,4-YLENE-CARBONYLMETHYL)-1, 4-DIHYDROPYRIDINES; FOR TREATING INFLAMMATION, PAIN, VIRAL INFECTIONS, CARDIOVASCULAR DISEASE, ALLERGIES, ASTHMA | PFIZER INC. (US) | 2000-10-17 | — | — | US | disclosed |
| EP-0702044-B1 | Polycarbonate redistribution method | GEN ELECTRIC (US) | 2000-05-03 | — | — | EP | disclosed |
| EP-0702044-A1 | Polycarbonate redistribution method | GENERAL ELECTRIC COMPANY (US) | 1996-03-20 | — | — | EP | disclosed |
| US-5459226-A | Melt extrusion in presence of tetraorganophosphonium carboxylate salt | GENERAL ELECTRIC COMPANY (US) | 1995-10-17 | — | — | US | disclosed |
| US-4613702-A | NEUTRALIZATION | RHONE-POULENC SPECIALITES CHIMIQUES (FR) | 1986-09-23 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20200159120-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | RPS4X, SIK3, MLX | CES2 2254/4885CES1 3631/4885CYP1A2 2955/4885 |
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SMC1A, CDH1, SMC4 | CES2 2501/4885CES1 1861/4885CYP1A2 2249/4885 |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | ASH2L, PUF60, IDUA | CES2 4176/4885CES1 4246/4885CYP1A2 4809/4885 |
| US-12332565-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | RPS4X, SIK3, MLX | CES2 2254/4885CES1 3631/4885CYP1A2 2955/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | CES2 936/4885CES1 2618/4885CYP1A2 4338/4885 |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | CES2 2647/4885CES1 3024/4885CYP1A2 1818/4885 |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SMURF1, OSR1, SIK1 | CES2 4119/4885CES1 3505/4885CYP1A2 4634/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.