Known targets — ChEMBL curated mechanism
ABL1ACEACHEACVR1ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALKAVPR1AAVPR2BCHEBCRCA2CACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCASRCCR5CDK4CDK6CFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNA3CHRNA7CHRNB1CHRNB4CHRNDCHRNECHRNGCOXFA4COXFA4L2CRBNCSF1RCUL4ACYP19A1DDB1DPP4DRD1DRD2DRD3DRD4EDNRAEGFREML4ERBB2ERBB4ESR1ESR2FGFR1FGFR3FLT1FLT3FLT4GAAGABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGHSRGLAGNRHRGPD2GRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BGSTP1HCN4HCRTR1HCRTR2HDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HRH2HRH3HSD11B1HSP90AA1HSP90AB1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IMPDH1IMPDH2ITGA2BITGB3ITKJAK1JAK2KCNA1KCNA10KCNA2KCNA3KCNA4KCNA5KCNA6KCNA7KCNB1KCNB2KCNC1KCNC2KCNC3KCNC4KCND1KCND2KCND3KCNF1KCNG1KCNG2KCNG3KCNG4KCNH1KCNH2KCNH3KCNH4KCNH5KCNH6KCNH7KCNH8KCNJ2KCNJ3KCNJ5KCNK3KCNK9KCNQ1KCNQ2KCNQ3KCNQ4KCNQ5KCNS1KCNS2KCNS3KCNV1KCNV2KDRKITKLKB1LCKMMAOAMAOBMAPK14METMMP1MMP13MMP7MMP8MT-ND1MT-ND2MT-ND3MT-ND4MT-ND4LMT-ND5MT-ND6NDUFA1NDUFA10NDUFA11NDUFA12NDUFA13NDUFA2NDUFA3NDUFA5NDUFA6NDUFA7NDUFA8NDUFA9NDUFAB1NDUFAF1NDUFAF2NDUFAF3NDUFAF4NDUFB1NDUFB10NDUFB11NDUFB2NDUFB3NDUFB4NDUFB5NDUFB6NDUFB7NDUFB8NDUFB9NDUFC1NDUFC2NDUFS1NDUFS2NDUFS3NDUFS4NDUFS5NDUFS6NDUFS7NDUFS8NDUFV1NDUFV2NDUFV3NR3C1NS5ANTRK1NTRK2NTRK3ODC1OPRD1OPRK1OPRM1P2RY12PAHPARP1PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDE5APDE7APDE7BPDE8APDE8BPDGFRAPDGFRBPIK3CAPIK3CDPNPPOLA1POLA2POLD1POLD2POLD3POLD4POLEPOLE2POLE3PPARGPRIM1PRIM2PRKCAPRKCBPRKCDPRKCEPRKCGPRKCHPRKCIPRKCQPRKCZPRKD1PRKD3PTGS1PTGS2RBX1RENRETROCK1ROCK2RPE65RRM1RRM2RRM2BS1PR1S1PR2S1PR3S1PR4S1PR5SCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC18A2SLC6A1SLC6A2SLC6A3SLC6A4SLC9A3SRCTACR1TOP1TOP2ATOP2BTTRTYMPdacAdacBdacCembAfolAftsIgyrAgyrBmrcAmrcBmrdAparCparEpolrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of Hydrochloric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL1486274 | 1.00 | — | — | |
| Hydrochloric Acid SCHEMBL10947558 | 1.00 | CA4 (0.50) | — | |
| Hydrochloric Acid SCHEMBL931677 | 1.00 | — | — | |
| Hydrochloric Acid SCHEMBL3420441 | 1.00 | — | — | |
| Hydrochloric Acid SCHEMBL8326760 | 1.00 | — | — | |
| Hydrochloric Acid SCHEMBL2388671 | 1.00 | — | — | |
| Hydrochloric Acid SCHEMBL20462 | 1.00 | — | — | |
| Hydrochloric Acid SCHEMBL1059682 | 1.00 | — | — | |
| Hydrochloric Acid SCHEMBL11597810 | 1.00 | — | — | |
| Hydrochloric Acid SCHEMBL1415960 | 1.00 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 574 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119920855-A | Negative electrode active material, preparation method thereof, negative electrode plate and battery | 万华化学(烟台)电池材料科技有限公司 | 2025-05-02 | — | — | CN | claimed |
| CN-119890256-A | Silicon-carbon composite material, silicon-carbon negative electrode material, preparation method of silicon-carbon composite material and battery | 徐州金龙湖泛半导体材料研究有限公司 | 2025-04-25 | — | — | CN | claimed |
| CN-119833578-A | Negative electrode material and preparation method thereof | 重庆弗迪电池研究院有限公司 | 2025-04-15 | — | — | CN | claimed |
| CN-119683624-A | Silicon-carbon negative electrode precursor material, silicon-carbon negative electrode material and preparation method thereof | 河南硅烷科技发展股份有限公司 | 2025-03-25 | — | — | CN | claimed |
| CN-119650673-A | Negative electrode active material, preparation method thereof, negative electrode plate and lithium ion battery | 重庆长安汽车股份有限公司 | 2025-03-18 | — | — | CN | claimed |
| CN-119455850-A | Preparation device and process of electronic grade silane | 湖北和远新材料有限公司 | 2025-02-18 | — | — | CN | claimed |
| CN-119361618-A | Negative electrode active material, preparation method thereof, negative electrode plate and application | 宁德时代新能源科技股份有限公司 | 2025-01-24 | — | — | CN | claimed |
| CN-222238851-U | Cold hydrogenation synthesizer | 新疆中部合盛硅业有限公司 | 2024-12-27 | — | — | CN | claimed |
| CN-119069659-A | Silicon-carbon composite material, preparation method thereof, negative electrode plate and lithium ion battery | 比亚迪股份有限公司 | 2024-12-03 | — | — | CN | claimed |
| CN-118930992-A | Medical antibacterial nanometer butyronitrile glove and preparation method thereof | 苏州益客医疗科技有限公司 | 2024-11-12 | — | — | CN | claimed |
| CN-112011152-A | Modified epoxy resin and bi-component epoxy adhesive | 上海蒂姆新材料科技有限公司 | 2020-12-01 | — | — | CN | claimed |
| CN-111892057-A | Polycrystalline silicon reduction system and polycrystalline silicon reduction process | 中国恩菲工程技术有限公司 | 2020-11-06 | — | — | CN | claimed |
| CN-111232986-A | Tail gas recovery method and recovery system in polycrystalline silicon reduction production | 新特能源股份有限公司 | 2020-06-05 | — | — | CN | claimed |
| US-20070059870-A1 | METHOD OF FORMING CARBON-CONTAINING SILICON NITRIDE LAYER | UNITED MICROELECTRONICS CORP. (TW) | 2007-03-15 | — | — | US | claimed |
| US-20020192930-A1 | Method of forming a single crystalline silicon pattern utilizing a structural selective epitaxial growth technique and a selective silicon etching technique | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-12-19 | — | — | US | claimed |
| US-6146938-A | Method of fabricating semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2000-11-14 | — | — | US | claimed |
| US-6001739-A | Method of manufacturing a semiconductor device | TOKYO ELECTRON LIMITED (JP) | 1999-12-14 | — | — | US | claimed |
| US-5874129-A | Low temperature, high pressure silicon deposition method | APPLIED MATERIALS, INC. (US) | 1999-02-23 | — | — | US | claimed |
| EP-0153732-A2 | Polybutadiene and process for preparing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 1985-09-04 | — | — | EP | claimed |
| US-3992322-A | Preparation of polymerization catalyst systems | UNIVERSAL OIL PRODUCTS COMPANY (US) | 1976-11-16 | — | — | US | claimed |