Known targets — ChEMBL curated mechanism
ABL1ACEACHEACVR1ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALKAVPR1AAVPR2BCHEBCRCA2CACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCASRCCR5CDK4CDK6CFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNA3CHRNA7CHRNB1CHRNB4CHRNDCHRNECHRNGCOXFA4COXFA4L2CRBNCSF1RCUL4ACYP19A1DDB1DPP4DRD1DRD2DRD3DRD4EDNRAEGFREML4ERBB2ERBB4ESR1ESR2FGFR1FGFR3FLT1FLT3FLT4GAAGABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGHSRGLAGNRHRGPD2GRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BGSTP1HCN4HCRTR1HCRTR2HDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HRH2HRH3HSD11B1HSP90AA1HSP90AB1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IMPDH1IMPDH2ITGA2BITGB3ITKJAK1JAK2KCNA1KCNA10KCNA2KCNA3KCNA4KCNA5KCNA6KCNA7KCNB1KCNB2KCNC1KCNC2KCNC3KCNC4KCND1KCND2KCND3KCNF1KCNG1KCNG2KCNG3KCNG4KCNH1KCNH2KCNH3KCNH4KCNH5KCNH6KCNH7KCNH8KCNJ2KCNJ3KCNJ5KCNK3KCNK9KCNQ1KCNQ2KCNQ3KCNQ4KCNQ5KCNS1KCNS2KCNS3KCNV1KCNV2KDRKITKLKB1LCKMMAOAMAOBMAPK14METMMP1MMP13MMP7MMP8MT-ND1MT-ND2MT-ND3MT-ND4MT-ND4LMT-ND5MT-ND6NDUFA1NDUFA10NDUFA11NDUFA12NDUFA13NDUFA2NDUFA3NDUFA5NDUFA6NDUFA7NDUFA8NDUFA9NDUFAB1NDUFAF1NDUFAF2NDUFAF3NDUFAF4NDUFB1NDUFB10NDUFB11NDUFB2NDUFB3NDUFB4NDUFB5NDUFB6NDUFB7NDUFB8NDUFB9NDUFC1NDUFC2NDUFS1NDUFS2NDUFS3NDUFS4NDUFS5NDUFS6NDUFS7NDUFS8NDUFV1NDUFV2NDUFV3NR3C1NS5ANTRK1NTRK2NTRK3ODC1OPRD1OPRK1OPRM1P2RY12PAHPARP1PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDE5APDE7APDE7BPDE8APDE8BPDGFRAPDGFRBPIK3CAPIK3CDPNPPOLA1POLA2POLD1POLD2POLD3POLD4POLEPOLE2POLE3PPARGPRIM1PRIM2PRKCAPRKCBPRKCDPRKCEPRKCGPRKCHPRKCIPRKCQPRKCZPRKD1PRKD3PTGS1PTGS2RBX1RENRETROCK1ROCK2RPE65RRM1RRM2RRM2BS1PR1S1PR2S1PR3S1PR4S1PR5SCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC18A2SLC6A1SLC6A2SLC6A3SLC6A4SLC9A3SRCTACR1TOP1TOP2ATOP2BTTRTYMPdacAdacBdacCembAfolAftsIgyrAgyrBmrcAmrcBmrdAparCparEpolrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of Hydrochloric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL7795115 | 1.00 | — | — | |
| SCHEMBL15413012 | 0.98 | — | — | |
| SCHEMBL4576034 | 0.95 | — | — | |
| SCHEMBL4577116 | 0.79 | — | — | |
| Hydrochloric Acid SCHEMBL1980753 | 0.70 | — | — | |
| Hydrochloric Acid SCHEMBL4633109 | 0.70 | — | — | |
| Hydrochloric Acid SCHEMBL7951613 | 0.70 | — | — | |
| Hydrochloric Acid SCHEMBL7194568 | 0.70 | — | — | |
| Hydrochloric Acid SCHEMBL4633236 | 0.70 | — | — | |
| Hydrochloric Acid SCHEMBL29281379 | 0.70 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 168 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4237373-A1 | MODIFIED CARBON-BASED MATERIALS | Yissum Research Development Company of the Hebrew University of Jerusalem Ltd. (IL) | 2023-09-06 | — | — | EP | claimed |
| WO-2022091105-A1 | MODIFIED CARBON-BASED MATERIALS | YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD. (IL) | 2022-05-05 | — | — | WO | claimed |
| EP-2834309-A2 | HYBRID METAL AND METAL OXIDE LAYERS WITH ENHANCED ACTIVITY | Yissum Research and Development Company of The Hebrew University of Jerusalem (IL) | 2015-02-11 | — | — | EP | claimed |
| WO-2013150533-A2 | HYBRID METAL AND METAL OXIDE LAYERS WITH ENHANCED ACTIVITY | YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD. (IL) | 2013-10-10 | — | — | WO | claimed |
| US-8395146-B2 | Composition and organic insulating film prepared using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-03-12 | — | — | US | claimed |
| US-8153267-B2 | Composition and organic insulator prepared using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-04-10 | — | — | US | claimed |
| US-8030644-B2 | Organic insulator composition, organic insulating film having the same, organic thin film transistor having the same and electronic device having the same and methods of forming the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-10-04 | — | — | US | claimed |
| US-8017245-B2 | Composition for preparing organic insulator | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-09-13 | — | — | US | claimed |
| US-20110204350-A1 | Composition and organic insulating film prepared using the same | HAHN JUNG SEOK | 2011-08-25 | — | — | US | claimed |
| US-20080308793-A1 | Composition and organic insulator prepared using the same | SAMSUNG ELETRONICS CO., LTD. (KR) | 2008-12-18 | — | — | US | claimed |
| US-20070181873-A1 | Organic-inorganic hybrid polymer and organic insulator composition having the same and methods thereof | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-08-09 | — | — | US | claimed |
| US-20070129473-A1 | Organic insulator composition, organic insulating film having the same, organic thin film transistor having the same and electronic device having the same and methods of forming the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-06-07 | — | — | US | claimed |
| US-20060147715-A1 | Composition for preparing organic insulator | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-07-06 | — | — | US | claimed |
| US-7005674-B2 | Organic thin film transistor comprising multi-layered gate insulator | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-02-28 | — | — | US | claimed |
| US-20060041096-A1 | Organic-inorganic metal hybrid material and composition for producing organic insulator comprising the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-02-23 | — | — | US | claimed |
| US-20050259212-A1 | Composition for preparing organic insulator | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-11-24 | — | — | US | claimed |
| EP-1524299-A1 | Composition for preparing organic insulator | Samsung Electronics Co., Ltd (KR) | 2005-04-20 | — | — | EP | claimed |
| US-20050001210-A1 | Organic thin film transistor comprising multi-layered gate insulator | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-01-06 | — | — | US | claimed |
| EP-1494298-A2 | Organic thin film transistor comprising multi-layered gate insulator | Samsung Electronics Co., Ltd. (KR) | 2005-01-05 | — | — | EP | claimed |
| US-6436605-B1 | Plasma resistant composition and use thereof | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2002-08-20 | — | — | US | claimed |