Known targets — ChEMBL curated mechanism
ABL1ACEACHEACVR1ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALKAVPR1AAVPR2BCHEBCRCA2CACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCASRCCR5CDK4CDK6CFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNA3CHRNA7CHRNB1CHRNB4CHRNDCHRNECHRNGCOXFA4COXFA4L2CRBNCSF1RCUL4ACYP19A1DDB1DPP4DRD1DRD2DRD3DRD4EDNRAEGFREML4ERBB2ERBB4ESR1ESR2FGFR1FGFR3FLT1FLT3FLT4GAAGABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGHSRGLAGNRHRGPD2GRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BGSTP1HCN4HCRTR1HCRTR2HDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HRH2HRH3HSD11B1HSP90AA1HSP90AB1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IMPDH1IMPDH2ITGA2BITGB3ITKJAK1JAK2KCNA1KCNA10KCNA2KCNA3KCNA4KCNA5KCNA6KCNA7KCNB1KCNB2KCNC1KCNC2KCNC3KCNC4KCND1KCND2KCND3KCNF1KCNG1KCNG2KCNG3KCNG4KCNH1KCNH2KCNH3KCNH4KCNH5KCNH6KCNH7KCNH8KCNJ2KCNJ3KCNJ5KCNK3KCNK9KCNQ1KCNQ2KCNQ3KCNQ4KCNQ5KCNS1KCNS2KCNS3KCNV1KCNV2KDRKITKLKB1LCKMMAOAMAOBMAPK14METMMP1MMP13MMP7MMP8MT-ND1MT-ND2MT-ND3MT-ND4MT-ND4LMT-ND5MT-ND6NDUFA1NDUFA10NDUFA11NDUFA12NDUFA13NDUFA2NDUFA3NDUFA5NDUFA6NDUFA7NDUFA8NDUFA9NDUFAB1NDUFAF1NDUFAF2NDUFAF3NDUFAF4NDUFB1NDUFB10NDUFB11NDUFB2NDUFB3NDUFB4NDUFB5NDUFB6NDUFB7NDUFB8NDUFB9NDUFC1NDUFC2NDUFS1NDUFS2NDUFS3NDUFS4NDUFS5NDUFS6NDUFS7NDUFS8NDUFV1NDUFV2NDUFV3NR3C1NS5ANTRK1NTRK2NTRK3ODC1OPRD1OPRK1OPRM1P2RY12PAHPARP1PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDE5APDE7APDE7BPDE8APDE8BPDGFRAPDGFRBPIK3CAPIK3CDPNPPOLA1POLA2POLD1POLD2POLD3POLD4POLEPOLE2POLE3PPARGPRIM1PRIM2PRKCAPRKCBPRKCDPRKCEPRKCGPRKCHPRKCIPRKCQPRKCZPRKD1PRKD3PTGS1PTGS2RBX1RENRETROCK1ROCK2RPE65RRM1RRM2RRM2BS1PR1S1PR2S1PR3S1PR4S1PR5SCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC18A2SLC6A1SLC6A2SLC6A3SLC6A4SLC9A3SRCTACR1TOP1TOP2ATOP2BTTRTYMPdacAdacBdacCembAfolAftsIgyrAgyrBmrcAmrcBmrdAparCparEpolrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of Hydrochloric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL8145150 | 1.00 | — | — | |
| Hydrochloric Acid SCHEMBL9565117 | 1.00 | — | — | |
| SCHEMBL179702 | 0.93 | — | — | |
| SCHEMBL1230650 | 0.86 | — | — | |
| Hydrochloric Acid SCHEMBL7782454 | 0.76 | — | — | |
| Hydrochloric Acid SCHEMBL17923679 | 0.71 | — | — | |
| Hydrochloric Acid SCHEMBL29051195 | 0.71 | — | — | |
| Hydrochloric Acid SCHEMBL27573924 | 0.71 | — | — | |
| Propane SCHEMBL476510 | 0.68 | — | — | |
| Propane SCHEMBL21358775 | 0.68 | TSHR (0.38) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 70 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116445890-B | STM induced monoatomic layer nitride growth method | 中国科学院苏州纳米技术与纳米仿生研究所 | 2025-04-25 | — | — | CN | claimed |
| CN-116445890-A | STM induced monoatomic layer nitride growth method | 中国科学院苏州纳米技术与纳米仿生研究所 | 2023-07-18 | — | — | CN | claimed |
| EP-0524817-B1 | Crystal growth method of III - V compound semiconductor | NEC CORP (JP) | 1999-03-17 | — | — | EP | claimed |
| EP-0524817-A2 | Crystal growth method of III - V compound semiconductor | NEC CORPORATION (JP) | 1993-01-27 | — | — | EP | claimed |
| CN-116445890-B | STM induced monoatomic layer nitride growth method | 中国科学院苏州纳米技术与纳米仿生研究所 | 2025-04-25 | — | — | CN | disclosed |
| CN-119161509-A | Solid catalyst component for olefin polymerization | 住友化学株式会社 | 2024-12-20 | — | — | CN | disclosed |
| CN-114057913-B | Solid catalyst component for olefin polymerization | 住友化学株式会社 | 2024-10-11 | — | — | CN | disclosed |
| CN-116445890-A | STM induced monoatomic layer nitride growth method | 中国科学院苏州纳米技术与纳米仿生研究所 | 2023-07-18 | — | — | CN | disclosed |
| CN-114057913-A | Solid catalyst component for olefin polymerization | 住友化学株式会社 | 2022-02-18 | — | — | CN | disclosed |
| CN-102977132-B | Metal-organic preparation | 陶氏环球技术有限公司 | 2016-12-21 | — | — | CN | disclosed |
| CN-103254248-B | Metal-organic preparation | ROHM AND HAAS ELECTRONIC MATERIALS CO., LTD. (US) | 2016-05-25 | — | — | CN | disclosed |
| CN-101469036-B | Production process of olefin polymerization catalyst component, of olefin polymerization catalyst, and of olefin polymer | SUMITOMO CHEMICAL CO | 2014-09-24 | — | — | CN | disclosed |
| CN-1230552-A | Solid catalyst component and catalyst for olefin polymerization, and process for producing olefin polymer | SUMITOMO CHEMICAL CO (JP) | 1999-10-06 | — | — | CN | disclosed |
| EP-0524817-B1 | Crystal growth method of III - V compound semiconductor | NEC CORP (JP) | 1999-03-17 | — | — | EP | disclosed |
| US-5294565-A | Crystal growth method of III - V compound semiconductor | NEC CORPORATION (JP) | 1994-03-15 | — | — | US | disclosed |
| US-5294565-A | Crystal growth method of III - V compound semiconductor | NEC CORPORATION (JP) | 1994-03-15 | — | — | US | disclosed |
| US-5235078-A | HETEROCYCLIC ORGANOMETALLIC COMPOUNDS | MERCK PATENT GESELLSCHAFT MIT BESCHRANKTER HAFTUNG (DE) | 1993-08-10 | — | — | US | disclosed |
| US-5204431-A | POLYCARBOSILANES CONTAINING A HETERO ELEMENT | SOLVAY DEUTSCHLAND, GMBH (DE) | 1993-04-20 | — | — | US | disclosed |
| EP-0524817-A2 | Crystal growth method of III - V compound semiconductor | NEC CORPORATION (JP) | 1993-01-27 | — | — | EP | disclosed |
| EP-0524817-A2 | Crystal growth method of III - V compound semiconductor | NEC CORPORATION (JP) | 1993-01-27 | — | — | EP | disclosed |