Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.40 |
| ▸ | GAA | P10253 | 2/20 | 0.40 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.39 |
| ▸ | ENPP3 | O14638 | 1/20 | 0.38 |
| ▸ | CA2 | P00918 | 1/20 | 0.38 |
| ▸ | ENPP1 | P22413 | 1/20 | 0.38 |
| ▸ | ENPP2 | Q13822 | 1/20 | 0.38 |
| ▸ | CA9 | Q16790 | 1/20 | 0.38 |
| ▸ | CYP17A1 | P05093 | 4/20 | 0.37 |
| ▸ | CYP19A1 | P11511 | 4/20 | 0.37 |
| ▸ | GABBR2 | O75899 | 1/20 | 0.37 |
| ▸ | GABRB1 | P18505 | 1/20 | 0.37 |
| ▸ | GABRB2 | P47870 | 1/20 | 0.37 |
| ▸ | GABBR1 | Q9UBS5 | 1/20 | 0.37 |
| ▸ | MGLL | Q99685 | 4/20 | 0.36 |
| ▸ | MAPT | P10636 | 1/20 | 0.34 |
| ▸ | XBP1 | P17861 | 1/20 | 0.34 |
| ▸ | RECQL | P46063 | 1/20 | 0.34 |
| ▸ | LMNA | P02545 | 1/20 | 0.34 |
| ▸ | ALOX12 | P18054 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL964662 | 0.92 | MEN1 (0.37) | ALDH1A1GAAKDM4EENPP3CA2 | |
| SCHEMBL14739754 | 0.92 | MGLL (0.35) | ALDH1A1GAAKDM4EENPP3CA2 | |
| SCHEMBL1830512 | 0.90 | ENPP3 (0.36) | ALDH1A1GAAKDM4EENPP3CA2 | |
| SCHEMBL14932185 | 0.80 | PRKCA (0.40) | ALDH1A1GAAKDM4ECYP17A1CYP19A1 | |
| SCHEMBL17420151 | 0.80 | ALDH1A1 (0.41) | ALDH1A1GAAKDM4EENPP3CA2 | |
| SCHEMBL13836391 | 0.79 | ALDH1A1 (0.44) | ALDH1A1GAAKDM4EENPP3CA2 | |
| SCHEMBL1398383 | 0.78 | ALDH1A1 (0.48) | ALDH1A1GAAKDM4EENPP3CA2 | |
| SCHEMBL14818275 | 0.78 | PRKCA (0.39) | ALDH1A1GAACYP17A1CYP19A1GABBR2 | |
| SCHEMBL482785 | 0.78 | MGLL (0.37) | ALDH1A1GAAMGLLLMNAKMT2A | |
| SCHEMBL501575 | 0.77 | KDM4E (0.38) | ALDH1A1GAAKDM4EENPP3CA2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 187 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12572075-B2 | Composition, method of forming resist underlayer film, and method of forming resist pattern | JSR CORPORATION (JP) | 2026-03-10 | — | — | US | disclosed |
| US-20250166999-A1 | Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-05-22 | — | — | US | disclosed |
| EP-4557002-A2 | PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2025-05-21 | — | — | EP | disclosed |
| US-12174536-B2 | Resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-12-24 | — | — | US | disclosed |
| US-20240377730-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-11-14 | — | — | US | disclosed |
| US-11940728-B2 | Molecular resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-03-26 | — | — | US | disclosed |
| US-20230041656-A1 | COMPOSITION, METHOD OF FORMING RESIST UNDERLAYER FILM, AND METHOD OF FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2023-02-09 | — | — | US | disclosed |
| US-20220155687-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-05-19 | — | — | US | disclosed |
| US-20220100089-A1 | MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-03-31 | — | — | US | disclosed |
| US-11262653-B2 | Sulfonium salt, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-03-01 | — | — | US | disclosed |
| EP-2033966-A2 | Movel photoacid generators, resist compositons, and patterning processes | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-03-11 | — | — | EP | disclosed |
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | PROXIMAL SYSTEMS CORPORATION | 2009-03-05 | — | — | US | disclosed |
| US-20080305411-A1 | PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-12-11 | — | — | US | disclosed |
| EP-2000851-A1 | Photomask blank, resist pattern forming process, and photomask preparation process | Shin-Etsu Chemical Co., Ltd. (JP) | 2008-12-10 | — | — | EP | disclosed |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-29 | — | — | US | disclosed |
| US-20080102407-A1 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080102405-A1 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-04-10 | — | — | US | disclosed |
| US-20080026331-A1 | Lactone-containing compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-27 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (9 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20220100089-A1 | MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS | ETV6, VCL, ETV1 | ALDH1A1 4697/4885GAA 4281/4885KDM4E 687/4885 |
| US-20080102405-A1 | Nitrogen-containing organic compound, resist composition and patterning process | MDM4, MUS81, NOP2 | ALDH1A1 4502/4885GAA 3509/4885KDM4E 1401/4885 |
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | RER1, CRY1, CYP21A2 | ALDH1A1 1497/4885GAA 4346/4885KDM4E 4577/4885 |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, HCN4 | ALDH1A1 3081/4885GAA 3780/4885KDM4E 549/4885 |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, TST | ALDH1A1 2781/4885GAA 3366/4885KDM4E 409/4885 |
| US-12572075-B2 | Composition, method of forming resist underlayer film, and method of forming resist pattern | TOP1, NAF1, ASH2L | ALDH1A1 2358/4885GAA 4711/4885KDM4E 615/4885 |
| US-11940728-B2 | Molecular resist composition and patterning process | ETV6, HNRNPR, ETV1 | ALDH1A1 4813/4885GAA 4213/4885KDM4E 863/4885 |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | RER1, SCO2, ASIC3 | ALDH1A1 1348/4885GAA 3083/4885KDM4E 4073/4885 |
| US-11262653-B2 | Sulfonium salt, polymer, resist composition, and patterning process | SMC4, SMCHD1, SMC3 | ALDH1A1 4739/4885GAA 2605/4885KDM4E 2237/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.