Known targets — ChEMBL curated mechanism
ABCC8ACEADORA1ADORA2AADORA2BADORA3ALDH5A1ALOX5ALOX5APATP4AATP4BBRAFCA1CA12CA2CA4CYSLTR1DHFRDPEP1EDNRAEDNRBESR2F10FDPSFGF1GABBR1GABBR2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGARTGNRHRGSC1HMGCRIMPDH1IMPDH2KCNJ11LY96NOD2NR3C1NS3NS4ANS5bP2RY1P2RY12P2RY2P2RY4P2RY6PBP2XPDE3APDE3BPDE4APDE4BPDE4CPDE4DPDK1PDK2PDK3PDK4PPARGPPATPTGIRPTGS1PTGS2RAF1RYR1RYR3SCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASERPINC1SLC12A1SLC12A3SYKTHRATHRBTLR3TLR4TLR9TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYMSVKORC1XDHblablaIMP-1blaOXA-33blaOXA-58blaT-3blaT-4blaT-5blaT-6dacAdacBdacCfolAfolPfolP1ftsIfusAgaggyrAgyrBmecAmrcAmrcBmrdApbp1apbp1bpbp2pbp2apbp2bpbp3pbp4pbpApbpBpbpCpbpFpolponBrplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpoArpoBrpoCrpoZrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Tetrabuthylammonium SCHEMBL3417172 | 0.83 | MEN1 (0.33) | — | |
| SCHEMBL501906 | 0.81 | KMT2A (0.36) | PRKCAELANE | |
| SCHEMBL2217884 | 0.81 | PRKCA (0.35) | PRKCAELANE | |
| SCHEMBL501596 | 0.79 | PRKCA (0.34) | PRKCAELANE | |
| SCHEMBL19857283 | 0.79 | PRKCA (0.34) | PRKCAELANE | |
| SCHEMBL19042383 | 0.79 | PRKCA (0.34) | PRKCAELANE | |
| SCHEMBL1001524 | 0.78 | KDM4E (0.41) | PRKCAELANE | |
| SCHEMBL543948 | 0.75 | TSHR (0.39) | — | |
| SCHEMBL544566 | 0.74 | PRKCA (0.33) | PRKCA | |
| SCHEMBL3836797 | 0.74 | PTPN1 (0.36) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 42 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2105794-B1 | Novel photoacid generator, resist composition, and patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-19 | — | — | EP | disclosed |
| EP-2256551-B1 | Pattern forming process using a chemically amplified resist composition | SHINETSU CHEMICAL CO (JP) | 2015-05-13 | — | — | EP | disclosed |
| EP-2081084-B1 | Positive resist compositions and patterning process | SHINETSU CHEMICAL CO (JP) | 2014-12-24 | — | — | EP | disclosed |
| US-8748672-B2 | 2-(alkylcarbonyloxy)-1, 1-difluoroethanesulfonic acid salt and method for producing the same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2014-06-10 | — | — | US | disclosed |
| US-8609889-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-12-17 | — | — | US | disclosed |
| US-20130317250-A1 | 2-(Alkylcarbonyloxy)-1, 1-Difluoroethanesulfonic Acid Salt and Method for Producing the Same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2013-11-28 | — | — | US | disclosed |
| US-8581009-B2 | 2-(alkylcarbonyloxy)-1, 1-difluoroethanesulfonic acid salt and method for producing the same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2013-11-12 | — | — | US | disclosed |
| US-8349533-B2 | Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-08 | — | — | US | disclosed |
| US-8288076-B2 | Chemically amplified resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-16 | — | — | US | disclosed |
| US-8222448-B2 | Processes for production of 2-bromo-2,2-difluoroethanol and 2-(alkylcarbonyloxy)-1, 1-difluoroethanesulfonic acid salt | CENTRAL GLASS COMPANY, LIMITED (JP) | 2012-07-17 | — | — | US | disclosed |
| US-20090246694-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-10-01 | — | — | US | disclosed |
| EP-2105794-A1 | Novel photoacid generator, resist composition, and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-09-30 | — | — | EP | disclosed |
| EP-2090931-A1 | Positive resist composition and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-08-19 | — | — | EP | disclosed |
| US-20090202943-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-13 | — | — | US | disclosed |
| US-20090186297-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| US-20090186298-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| US-20090186296-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-07-23 | — | — | US | disclosed |
| EP-2081083-A1 | Positive resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-07-22 | — | — | EP | disclosed |
| EP-2081084-A1 | Positive resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-07-22 | — | — | EP | disclosed |
| EP-2081085-A1 | Positive resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-07-22 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20090246694-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | ASIC1, HAO2, HRH3 | PRKCA 2200/4885ELANE 3300/4885 |
| US-20130317250-A1 | 2-(Alkylcarbonyloxy)-1, 1-Difluoroethanesulfonic Acid Salt and Method for Producing the Same | PFAS, DDAH1, STS | PRKCA 1921/4885ELANE 1199/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.