Known targets — ChEMBL curated mechanism
ABL1ACEACHEACVR1ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALKAVPR1AAVPR2BCHEBCRCA2CACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCASRCCR5CDK4CDK6CFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNA3CHRNA7CHRNB1CHRNB4CHRNDCHRNECHRNGCOXFA4COXFA4L2CRBNCSF1RCUL4ACYP19A1DDB1DPP4DRD1DRD2DRD3DRD4EDNRAEGFREML4ERBB2ERBB4ESR1ESR2FGFR1FGFR3FLT1FLT3FLT4GAAGABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGHSRGLAGNRHRGPD2GRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BGSTP1HCN4HCRTR1HCRTR2HDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HRH2HRH3HSD11B1HSP90AA1HSP90AB1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IMPDH1IMPDH2ITGA2BITGB3ITKJAK1JAK2KCNA1KCNA10KCNA2KCNA3KCNA4KCNA5KCNA6KCNA7KCNB1KCNB2KCNC1KCNC2KCNC3KCNC4KCND1KCND2KCND3KCNF1KCNG1KCNG2KCNG3KCNG4KCNH1KCNH2KCNH3KCNH4KCNH5KCNH6KCNH7KCNH8KCNJ2KCNJ3KCNJ5KCNK3KCNK9KCNQ1KCNQ2KCNQ3KCNQ4KCNQ5KCNS1KCNS2KCNS3KCNV1KCNV2KDRKITKLKB1LCKMMAOAMAOBMAPK14METMMP1MMP13MMP7MMP8MT-ND1MT-ND2MT-ND3MT-ND4MT-ND4LMT-ND5MT-ND6NDUFA1NDUFA10NDUFA11NDUFA12NDUFA13NDUFA2NDUFA3NDUFA5NDUFA6NDUFA7NDUFA8NDUFA9NDUFAB1NDUFAF1NDUFAF2NDUFAF3NDUFAF4NDUFB1NDUFB10NDUFB11NDUFB2NDUFB3NDUFB4NDUFB5NDUFB6NDUFB7NDUFB8NDUFB9NDUFC1NDUFC2NDUFS1NDUFS2NDUFS3NDUFS4NDUFS5NDUFS6NDUFS7NDUFS8NDUFV1NDUFV2NDUFV3NR3C1NS5ANTRK1NTRK2NTRK3ODC1OPRD1OPRK1OPRM1P2RY12PAHPARP1PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDE5APDE7APDE7BPDE8APDE8BPDGFRAPDGFRBPIK3CAPIK3CDPNPPOLA1POLA2POLD1POLD2POLD3POLD4POLEPOLE2POLE3PPARGPRIM1PRIM2PRKCAPRKCBPRKCDPRKCEPRKCGPRKCHPRKCIPRKCQPRKCZPRKD1PRKD3PTGS1PTGS2RBX1RENRETROCK1ROCK2RPE65RRM1RRM2RRM2BS1PR1S1PR2S1PR3S1PR4S1PR5SCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC18A2SLC6A1SLC6A2SLC6A3SLC6A4SLC9A3SRCTACR1TOP1TOP2ATOP2BTTRTYMPdacAdacBdacCembAfolAftsIgyrAgyrBmrcAmrcBmrdAparCparEpolrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of Hydrochloric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL10394970 | 1.00 | — | — | |
| Hydrochloric Acid SCHEMBL10394625 | 1.00 | — | — | |
| Hydrochloric Acid SCHEMBL377646 | 0.82 | — | — | |
| Hydrochloric Acid SCHEMBL9373462 | 0.82 | CA4 (0.50) | — | |
| Hydrochloric Acid SCHEMBL1191765 | 0.82 | — | — | |
| Hydrochloric Acid SCHEMBL11622385 | 0.82 | — | — | |
| Hydrochloric Acid SCHEMBL953664 | 0.82 | — | — | |
| Hydrochloric Acid SCHEMBL4876348 | 0.82 | CA4 (0.50) | — | |
| Hydrochloric Acid SCHEMBL8378160 | 0.82 | — | — | |
| Hydrochloric Acid SCHEMBL3051342 | 0.82 | CA4 (0.50) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9353433-B2 | Method of fabricating liquid for oxide thin film | INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY (KR) | 2016-05-31 | — | — | US | claimed |
| US-9123818-B2 | Compositions for solution process, electronic devices fabricated using the same, and fabrication methods thereof | INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY (KR) | 2015-09-01 | — | — | US | claimed |
| US-20140000480-A1 | METHOD OF FABRICATING LIQUID FOR OXIDE THIN FILM | INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY (KR) | 2014-01-02 | — | — | US | claimed |
| US-8523996-B2 | Method of fabricating liquid for oxide thin film | INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY (KR) | 2013-09-03 | — | — | US | claimed |
| US-20120080678-A1 | COMPOSITIONS FOR SOLUTION PROCESS, ELECTRONIC DEVICES FABRICATED USING THE SAME, AND FABRICATION METHODS THEREOF | INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY (KR) | 2012-04-05 | — | — | US | claimed |
| US-20100251936-A1 | METHOD OF FABRICATING LIQUID FOR OXIDE THIN FILM | INDUSTRY-ACADEMIC COOPERATION FOUNDATION , (KR) | 2010-10-07 | — | — | US | claimed |
| EP-4391083-A2 | COATING LIQUID FOR FORMING N-TYPE OXIDE SEMICONDUCTOR FILM, METHOD FOR PRODUCING N-TYPE OXIDE SEMICONDUCTOR FILM, AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR | Ricoh Company, Ltd. (JP) | 2024-06-26 | — | — | EP | disclosed |
| EP-3350839-B1 | COATING LIQUID FOR FORMING N-TYPE OXIDE SEMICONDUCTOR FILM, METHOD FOR PRODUCING N-TYPE OXIDE SEMICONDUCTOR FILM, AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR | RICOH CO LTD (JP) | 2024-06-12 | — | — | EP | disclosed |
| US-11908945-B2 | Coating liquid for forming n-type oxide semiconductor film, method for producing n-type oxide semiconductor film, and method for producing field-effect transistor | RICOH COMPANY, LTD. (JP) | 2024-02-20 | — | — | US | disclosed |
| CN-108028270-B | Coating liquid for forming n-type oxide semiconductor film, method for manufacturing n-type oxide semiconductor film, and method for manufacturing field effect transistor | 株式会社理光 | 2021-10-22 | — | — | CN | disclosed |
| US-20190051752-A1 | COATING LIQUID FOR FORMING N-TYPE OXIDE SEMICONDUCTOR FILM, METHOD FOR PRODUCING N-TYPE OXIDE SEMICONDUCTOR FILM, AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR | RICOH COMOANY, LTD. (JP) | 2019-02-14 | — | — | US | disclosed |
| EP-3350839-A1 | COATING LIQUID FOR FORMING N-TYPE OXIDE SEMICONDUCTOR FILM, METHOD FOR PRODUCING N-TYPE OXIDE SEMICONDUCTOR FILM, AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR | Ricoh Company, Ltd. (JP) | 2018-07-25 | — | — | EP | disclosed |
| CN-108028270-A | For forming coating fluid, n-type oxide semiconductor film manufacture method and the manufacturing method for field effect transistor of n-type oxide semiconductor film | 株式会社理光 | 2018-05-11 | — | — | CN | disclosed |
| US-20120080678-A1 | COMPOSITIONS FOR SOLUTION PROCESS, ELECTRONIC DEVICES FABRICATED USING THE SAME, AND FABRICATION METHODS THEREOF | INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY (KR) | 2012-04-05 | — | — | US | disclosed |
| US-20100251936-A1 | METHOD OF FABRICATING LIQUID FOR OXIDE THIN FILM | INDUSTRY-ACADEMIC COOPERATION FOUNDATION , (KR) | 2010-10-07 | — | — | US | disclosed |
| US-20100120929-A1 | METHOD FOR PRODUCING HEAT-EXPANDABLE MICROSPHERES AND APPLICATION THEREOF | MATSUMOTO YUSHI-SEIYAKU CO., LTD. (JP) | 2010-05-13 | — | — | US | disclosed |
| EP-2151456-A1 | PROCESS FOR PRODUCTION OF THERMALLY EXPANDABLE BEADS AND APPLICATION THEREOF | Matsumoto Yushi-Seiyaku CO., LTD. (JP) | 2010-02-10 | — | — | EP | disclosed |
| US-20090149559-A1 | HEAT-EXPANDABLE MICROSPHERES, METHOD FOR PRODUCING THE SAME, AND APPLICATION THEREOF | MATSUMOTO YUSHI-SEIYAKU CO., LTD (JP) | 2009-06-11 | — | — | US | disclosed |
| WO-2009054574-A1 | METHOD OF FABRICATING LIQUID FOR OXIDE THIN FILM | INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY (KR) | 2009-04-30 | — | — | WO | disclosed |
| EP-1952881-A1 | HEAT-EXPANDABLE MICROSPHERE, PROCESS FOR PRODUCING THE SAME, AND USE | MATSUMOTO YUSHI-SEIYAKU CO., LTD. (JP) | 2008-08-06 | — | — | EP | disclosed |