Tetrabuthylammonium

Tetrabuthylammonium

SCHEMBL106155

CCCC[N+](CCCC)(CCCC)CCCC.O=C([O-])C(=O)O

nearest known ligand 0.57

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

OPRM1SLC6A4

The experimentally established mechanism targets of Tetrabuthylammonium. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
SLC22A1 O15245 3/20 0.57
SLC22A2 O15244 1/20 0.50
ALDH1A1 P00352 1/20 0.46
TP53 P04637 1/20 0.46
CYP3A4 P08684 1/20 0.46
ALOX15 P16050 1/20 0.46
TSHR P16473 1/20 0.46
ALOX12 P18054 1/20 0.46
SMN1; SMN2 Q16637 1/20 0.46
HIF1A Q16665 1/20 0.46
HSD17B10 Q99714 1/20 0.46
CES2 O00748 4/20 0.44
CES1 P23141 4/20 0.44
DNM1 Q05193 2/20 0.42
AKR1B1 P15121 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tetrabuthylammonium SCHEMBL17768455 0.92 SLC22A1 (0.48) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrabuthylammonium SCHEMBL9505231 0.91 SLC22A1 (0.57) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrabuthylammonium SCHEMBL16093912 0.91 SLC22A1 (0.57) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrabuthylammonium SCHEMBL9505251 0.91 SLC22A1 (0.57) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrabuthylammonium SCHEMBL109269 0.90 SLC22A1 (0.63) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrabuthylammonium SCHEMBL9315609 0.90 SLC22A1 (0.63) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrabuthylammonium SCHEMBL106153 0.90 SLC22A1 (0.63) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrabuthylammonium SCHEMBL16343940 0.90 SLC22A1 (0.63) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrabuthylammonium SCHEMBL3488441 0.88 SLC22A1 (0.60) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrabuthylammonium SCHEMBL18109154 0.88 SLC22A1 (0.60) SLC22A1SLC22A2ALDH1A1TP53CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 273 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115785425-A Carbon dioxide-based polycarbonate-polyether block polyol and preparation method thereof 佛山市中天融新材料科技有限公司 2023-03-14 CN claimed
CN-115073458-A Preparation method of avibactam sodium 山东致泰医药技术有限公司 2022-09-20 CN claimed
EP-2011798-B1 Preparation of platinum (II) complexes PLATCO TECHNOLOGIES PROPRIETARY LTD (ZA) 2011-06-29 EP claimed
US-7956208-B2 Preparation of platinum (II) complexes PLATCO TECHNOLOGIES (PROPRIETARY) LIMITED (ZA) 2011-06-07 US claimed
US-7888523-B2 Preparation of platinum(II) complexes PLATCO TECHNOLOGIES (PROPRIETARY) LIMITED (ZA) 2011-02-15 US claimed
US-20090299085-A1 PREPARATION OF PLATINUM(II) COMPLEXES PLATCO TECHNOLOGIES (PROPRIETARY) LIMITED (ZA) 2009-12-03 US claimed
US-20090281319-A1 PREPARATION OF PLATINUM (II) COMPLEXES PLATCO TECHNOLOGIES (PROPRIETARY) LIMITED (ZA) 2009-11-12 US claimed
US-7589225-B2 Preparation of platinum(II) complexes PLATCO TECHNOLOGIES (PROPRIETARY) LIMITED (ZA) 2009-09-15 US claimed
EP-1789427-B1 PREPARATION OF PLATINUM(II) COMPLEXES PLATCO TECHNOLOGIES PROPRIETAR (ZA) 2009-05-20 EP claimed
EP-2011798-A1 Preparation of platinum (II) complexes Platco Technologies (Proprietary) Limited (ZA) 2009-01-07 EP claimed
EP-1979369-A1 PREPARATION OF PLATINUM (LL) COMPLEXES Platco Technologies (Proprietary) Limited (ZA) 2008-10-15 EP claimed
US-20080064895-A1 Preparation of Platinum(II) Complexes PLATCO TECHNOLOGIES (PROPRIETARY) LIMITED (ZA) 2008-03-13 US claimed
WO-2007085957-A1 PREPARATION OF PLATINUM (LL) COMPLEXES PLATCO TECHNOLOGIES (PROPRIETARY) LIMITED (ZA) 2007-08-02 WO claimed
EP-1789427-A1 PREPARATION OF PLATINUM(II) COMPLEXES Platco Technologies (Proprietary) Limited (ZA) 2007-05-30 EP claimed
WO-2006024897-A1 PREPARATION OF PLATINUM(II) COMPLEXES PLATCO TECHNOLOGIES (PROPRIETARY) LIMITED (ZA) 2006-03-09 WO claimed
EP-1142049-B1 HYDROFLUORIC ACID SCAVENGER DANIONICS AS (DK) 2002-09-18 EP claimed
WO-2000042672-A9 HYDROFLUORIC ACID SCAVENGER DANIONICS AS (DK) 2001-11-15 WO claimed
EP-1142049-A2 HYDROFLUORIC ACID SCAVENGER DANIONICS A/S (DK) 2001-10-10 EP claimed
WO-2000042672-A2 HYDROFLUORIC ACID SCAVENGER DANIONICS A/S (DK) 2000-07-20 WO claimed
US-12619149-B2 DNQ-free chemically amplified resist composition MERCK PATENT GMBH (DE) 2026-05-05 US disclosed
US-20260118767-A1 REVERSE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-30 US disclosed
EP-4700067-A1 COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPERSTRATE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-02-25 EP disclosed
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-02-12 US disclosed
EP-4692941-A2 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-02-11 EP disclosed
US-20260029706-A1 COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPER STRAIGHT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-29 US disclosed
US-12503552-B2 Self-blowing isocyanate-free polyurethane foams UNIVERSITE DE LIEGE (BE) 2025-12-23 US disclosed
EP-4636010-A1 IMPROVED COMPOSITIONS FOR SELF-BLOWING NON-ISOCYANATE POLYURETHANE FOAMS Université de Liège (BE) 2025-10-22 EP disclosed
EP-4621486-A2 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-24 EP disclosed
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-18 US disclosed
US-12393115-B2 Positive working photosensitive material MERCK PATENT GMBH (DE) 2025-08-19 US disclosed
EP-4592299-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-30 EP disclosed
US-20250237953-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-24 US disclosed
US-12332565-B2 Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-06-17 US disclosed
US-12332567-B2 Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-06-17 US disclosed
CN-114651212-B Positive photosensitive material 默克专利股份有限公司 2025-05-02 CN disclosed
CN-112526822-B Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2025-02-28 CN disclosed
US-20250028245-A1 POSITIVE TONE ULTRA THICK PHOTORESIST COMPOSITION EMD PERFORMANCE MATERIALS CORP. 2025-01-23 US disclosed
US-12174541-B2 Composition for forming silicon-containing resist underlayer film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-12-24 US disclosed
CN-112286000-B Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2024-12-03 CN disclosed
CN-111856882-B Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2024-11-29 CN disclosed
EP-4263672-B1 SELF-BLOWING ISOCYANATE-FREE POLYURETHANE FOAMS UNIV LIEGE (BE) 2024-10-09 EP disclosed
US-20240319598-A1 Composition For Forming Silicon-Containing Resist Underlayer Film And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-09-26 US disclosed
EP-4435515-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-09-25 EP disclosed
EP-4433874-A1 POSITIVE TONE ULTRA THICK PHOTORESIST COMPOSITION Merck Patent GmbH (DE) 2024-09-25 EP disclosed
CN-112654928-B Positive photosensitive material 默克专利股份有限公司 2024-09-24 CN disclosed
EP-4430105-A1 SELF-BLOWING ISOCYANATE-FREE POLYURETHANE FOAMS Université de Liège (BE) 2024-09-18 EP disclosed
CN-118620392-A Composition for forming silicon-containing resist underlayer film and pattern forming method 信越化学工业株式会社 2024-09-10 CN disclosed
US-12085857-B2 Composition for forming silicon-containing resist underlayer film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-09-10 US disclosed
EP-3770209-B1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2024-09-04 EP disclosed
CN-118284854-A Positive ultra-thick photoresist composition 默克专利股份有限公司 2024-07-02 CN disclosed
CN-114660896-B Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound 信越化学工业株式会社 2024-06-11 CN disclosed
US-12001138-B2 Composition for forming silicon-containing resist underlayer film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-06-04 US disclosed
EP-3680275-B1 THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2024-03-06 EP disclosed
EP-3796086-B1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2024-02-28 EP disclosed
US-11914295-B2 Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-20240043647-A1 Self-blowing isocyanate-free polyurethane foams Université de Liège (BE) 2024-02-08 US disclosed
US-20230416487-A1 SELF-BLOWING ISOCYANATE-FREE POLYURETHANE FOAMS Université de Liège (BE) 2023-12-28 US disclosed
EP-4263672-A1 SELF-BLOWING ISOCYANATE-FREE POLYURETHANE FOAMS Université de Liège (BE) 2023-10-25 EP disclosed
US-20230333472-A1 THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-19 US disclosed
US-20230305405-A1 COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
EP-4250008-A1 COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-27 EP disclosed
CN-116804825-A Composition for forming silicon-containing metal hard mask and pattern forming method 信越化学工业株式会社 2023-09-26 CN disclosed
EP-3994201-B1 SELF-BLOWING ISOCYANATE-FREE POLYURETHANE FOAMS UNIV LIEGE (BE) 2023-09-06 EP disclosed
CN-111208710-B Iodine-containing thermosetting silicon-containing material, resist underlayer film forming composition for extreme ultraviolet lithography containing the same, and pattern forming method 信越化学工业株式会社 2023-08-22 CN disclosed
CN-111458980-B Composition for forming underlayer film of silicon-containing resist and method for forming pattern 信越化学工业株式会社 2023-08-11 CN disclosed
US-20230244149-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-03 US disclosed
EP-3686256-B1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2023-06-28 EP disclosed
WO-2023104362-A1 SELF-BLOWING ISOCYANATE-FREE POLYURETHANE FOAMS Université de Liège (BE) 2023-06-15 WO disclosed
EP-4194481-A1 SELF-BLOWING ISOCYANATE-FREE POLYURETHANE FOAMS Université de Liège (BE) 2023-06-14 EP disclosed
WO-2023088874-A1 POSITIVE TONE ULTRA THICK PHOTORESIST COMPOSITION MERCK PATENT GMBH (DE) 2023-05-25 WO disclosed
EP-4020081-B1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND SILICON COMPOUND SHINETSU CHEMICAL CO (JP) 2023-05-17 EP disclosed
US-20230112024-A1 DNQ-FREE CHEMICALLY AMPLIFIED RESIST COMPOSITION MERCK PATENT GMBH (DE) 2023-04-13 US disclosed
CN-108885396-B Positive working photosensitive material 默克专利有限公司 2023-03-24 CN disclosed
CN-115785425-A Carbon dioxide-based polycarbonate-polyether block polyol and preparation method thereof 佛山市中天融新材料科技有限公司 2023-03-14 CN disclosed
US-11592287-B2 Method for measuring distance of diffusion of curing catalyst SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-02-28 US disclosed
US-11555697-B2 2023-01-17 US disclosed
US-11485824-B2 Thermosetting silicon-containing compound, composition for forming a silicon-containing film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-11-01 US disclosed
US-20220342308-A1 POSITIVE WORKING PHOTOSENSITIVE MATERIALS MERCK PATENT GMBH (DE) 2022-10-27 US disclosed
US-11480879-B2 Composition for forming silicon-containing resist underlayer film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-10-25 US disclosed
EP-4058848-A1 POSITIVE WORKING PHOTOSENSITIVE MATERIAL Merck Patent GmbH (DE) 2022-09-21 EP disclosed
CN-115073458-A Preparation method of avibactam sodium 山东致泰医药技术有限公司 2022-09-20 CN disclosed
US-20220221793-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND SILICON COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-07-14 US disclosed
US-11385544-B2 Composition for forming silicon-containing resist underlayer film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-07-12 US disclosed
EP-4020081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND SILICON COMPOUND Shin-Etsu Chemical Co., Ltd. (JP) 2022-06-29 EP disclosed
CN-114660896-A Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound 信越化学工业株式会社 2022-06-24 CN disclosed
US-20220195117-A1 SELF-BLOWING ISOCYANATE-FREE POLYURETHANE FOAMS UNIVERSITE DE LIEGE (BE) 2022-06-23 US disclosed
WO-2022128822-A1 SELF-BLOWING ISOCYANATE-FREE POLYURETHANE FOAMS Université de Liège (BE) 2022-06-23 WO disclosed
EP-4015563-A1 SELF-BLOWING ISOCYANATE-FREE POLYURETHANE FOAMS Université de Liège (BE) 2022-06-22 EP disclosed
CN-114651212-A Positive photosensitive material 默克专利股份有限公司 2022-06-21 CN disclosed
EP-3994201-A1 SELF-BLOWING ISOCYANATE-FREE POLYURETHANE FOAMS Université de Liège (BE) 2022-05-11 EP disclosed
CN-110344062-B Etching solution for grid titanium-aluminum-titanium laminated metal film 江阴江化微电子材料股份有限公司 2022-03-25 CN disclosed
US-20220019141-A1 POSITIVE WORKING PHOTOSENSITIVE MATERIAL MERCK PATENT GMBH (DE) 2022-01-20 US disclosed
EP-2862024-B1 POSITIVE PHOTOSENSITIVE MATERIAL MERCK PATENT GMBH (DE) 2021-12-01 EP disclosed
WO-2021219509-A1 DNQ-FREE CHEMICALLY AMPLIFIED RESIST COMPOSITION MERCK PATENT GMBH (DE) 2021-11-04 WO disclosed
EP-3736632-B1 METHOD FOR MEASURING DISTANCE OF DIFFUSION OF CURING CATALYST SHINETSU CHEMICAL CO (JP) 2021-09-22 EP disclosed
EP-3847506-A1 POSITIVE WORKING PHOTOSENSITIVE MATERIAL Merck Patent GmbH (DE) 2021-07-14 EP disclosed
EP-3657254-B1 THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2021-06-16 EP disclosed
US-10976662-B2 Positive working photosensitive material MERCK PATENT GMBH (DE) 2021-04-13 US disclosed
CN-112654928-A Positive photosensitive material 默克专利股份有限公司 2021-04-13 CN disclosed
US-20210088908-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-03-25 US disclosed
EP-3796086-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2021-03-24 EP disclosed
US-20210026246-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-01-28 US disclosed
EP-3770209-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2021-01-27 EP disclosed
WO-2021004993-A1 SELF-BLOWING ISOCYANATE-FREE POLYURETHANE FOAMS Université de Liège (BE) 2021-01-14 WO disclosed
EP-3760664-A1 SELF-BLOWING ISOCYANATE-FREE POLYURETHANE FOAMS Université de Liège (BE) 2021-01-06 EP disclosed
EP-3736632-A1 METHOD FOR MEASURING DISTANCE OF DIFFUSION OF CURING CATALYST Shin-Etsu Chemical Co., Ltd. (JP) 2020-11-11 EP disclosed
CN-111855581-A Method for determining diffusion distance of hardening catalyst 信越化学工业株式会社 2020-10-30 CN disclosed
US-20200341377-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-10-29 US disclosed
US-20200340806-A1 METHOD FOR MEASURING DISTANCE OF DIFFUSION OF CURING CATALYST SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-10-29 US disclosed
EP-3731017-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2020-10-28 EP disclosed
CN-109276569-B Stable crystal form pharmaceutical composition and preparation method and application thereof 四川海思科制药有限公司 2020-09-29 CN disclosed
EP-3484890-B1 SELECTIVE PORPHYRIN-CATALYZED ELECTROCHEMICAL REDUCTION OF CO2 INTO CO, IN PARTICULAR IN WATER CENTRE NAT RECH SCIENT (FR) 2020-09-02 EP disclosed
EP-3686256-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2020-07-29 EP disclosed
US-20200233303-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-07-23 US disclosed
EP-3680275-A1 THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2020-07-15 EP disclosed
US-20200216670-A1 THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-07-09 US disclosed
EP-3657254-A1 THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2020-05-27 EP disclosed
US-20200159120-A1 THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-05-21 US disclosed
EP-3446180-B1 POSITIVE WORKING PHOTOSENSITIVE MATERIAL AZ ELECTRONIC MAT LUXEMBOURG SARL (LU) 2020-04-01 EP disclosed
EP-2929397-B1 POSITIVE WORKING PHOTOSENSITIVE MATERIAL AZ ELECTRONIC MAT LUXEMBOURG SARL (LU) 2020-03-18 EP disclosed
CN-104781731-B Positive-working light-sensitive material AZ电子材料卢森堡有限公司 2019-12-03 CN disclosed
CN-110344062-A A kind of folded metal film etching solution of grid titanium aluminium titanium layer 江阴江化微电子材料股份有限公司 2019-10-18 CN disclosed
US-20190224660-A1 SELECTIVE PORPHYRIN-CATALYZED ELECTROCHEMICAL REDUCTION OF CO2 INTO CO, IN PARTICULAR IN WATER CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS) (FR) 2019-07-25 US disclosed
EP-3484890-A1 SELECTIVE PORPHYRIN-CATALYZED ELECTROCHEMICAL REDUCTION OF CO2 INTO CO, IN PARTICULAR IN WATER Centre National de la Recherche Scientifique (CNRS) (FR) 2019-05-22 EP disclosed
US-10239792-B2 Method of preparing ceramic powders EESTOR, INC. (US) 2019-03-26 US disclosed
EP-2897910-B1 ELECTROCHEMICAL CO-PRODUCTION OF CHEMICALS UTILIZING A HALIDE SALT AVANTIUM KNOWLEDGE CENTRE BV (NL) 2019-01-02 EP disclosed
EP-2445844-B1 FUSED QUARTZ HORIZONTAL FURNACE AND ASSEMBLY EESTOR INC (US) 2018-10-31 EP disclosed
EP-2426558-B1 Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process SHINETSU CHEMICAL CO (JP) 2018-10-24 EP disclosed
CN-104380198-B Positive photosensitive material AZ电子材料卢森堡有限公司 2018-09-21 CN disclosed
EP-2935654-B1 METHOD FOR PRODUCTION OF OXALIC ACID AND OXALIC ACID REDUCTION PRODUCTS AVANTIUM KNOWLEDGE CENTRE BV (NL) 2018-02-28 EP disclosed
US-9902743-B2 Copper complex for capturing carbon dioxide BOARD OF SUPERVISORS OF LOUISISANA STATE UNIVERSITY AND AGRICULTURAL AND MECHANICAL COLLEGE 2018-02-27 US disclosed
WO-2018011229-A1 SELECTIVE PORPHYRIN-CATALYZED ELECTROCHEMICAL REDUCTION OF CO2 INTO CO, IN PARTICULAR IN WATER CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS) (FR) 2018-01-18 WO disclosed
EP-2500775-B1 PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR SHINETSU CHEMICAL CO (JP) 2018-01-03 EP disclosed
US-20160257702-A1 Copper Complex for Capturing Carbon Dioxide BOARD OF SUPERVISORS OF LOUISISANA STATE UNIVERSITY AND AGRICULTURAL AND MECHANICAL COLLEGE 2016-09-08 US disclosed
US-9267212-B2 Method and system for production of oxalic acid and oxalic acid reduction products LIQUID LIGHT, INC. (US) 2016-02-23 US disclosed
US-20160023954-A1 METHOD OF PREPARING CERAMIC POWDERS EESTOR, INC. 2016-01-28 US disclosed
EP-2935654-A1 METHOD AND SYSTEM FOR PRODUCTION OF OXALIC ACID AND OXALIC ACID REDUCTION PRODUCTS Liquid Light, Inc. (US) 2015-10-28 EP disclosed
EP-2929397-A2 POSITIVE WORKING PHOTOSENSITIVE MATERIAL AZ Electronic Materials (Luxembourg) S.à.r.l. (LU) 2015-10-14 EP disclosed
EP-2897910-A2 ELECTROCHEMICAL CO-PRODUCTION OF CHEMICALS UTILIZING A HALIDE SALT Liquid Light, Inc. (US) 2015-07-29 EP disclosed
CN-104781731-A Positive working photosensitive material AZ ELECTRONIC MATERIALS LUXEMBOURG SARL 2015-07-15 CN disclosed
US-9080240-B2 Electrochemical co-production of a glycol and an alkene employing recycled halide LIQUID LIGHT, INC. (US) 2015-07-14 US disclosed
WO-2015057559-A1 COPPER COMPLEX FOR CAPTURING CARBON DIOXIDE BOARD OF SUPERVISORS OF LOUISIANA STATE UNIVERSITY AND AGRICULTURAL AND MECHANICAL COLLEGE (US) 2015-04-23 WO disclosed
EP-2862024-A1 POSITIVE PHOTOSENSITIVE MATERIAL AZ Electronic Materials (Luxembourg) S.à.r.l. (LU) 2015-04-22 EP disclosed
US-9012126-B2 Positive photosensitive material AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L. (LU) 2015-04-21 US disclosed
CN-102603448-B Method for performing metal catalytic coupling reaction by utilizing organic anion-cation pair USTC UNIV SCIENCE TECH CN 2015-03-04 CN disclosed
CN-104380198-A Positive photosensitive material AZ ELECTRONIC MATERIALS LUXEMBOURG SARL 2015-02-25 CN disclosed
US-8951711-B2 Patterning process and composition for forming silicon-containing film usable therefor SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-10 US disclosed
CN-102482136-B Horizontal fused quartz furnace and assembly EESTOR INC 2014-11-26 CN disclosed
US-20140342289-A1 PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-11-20 US disclosed
US-8853116-B2 Method of preparing ceramic powders EESTOR, INC. (US) 2014-10-07 US disclosed
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WO-2014160529-A1 METHOD AND SYSTEM FOR THE CAPTURE AND CONVERSION OF ANODICALLY PRODUCED HALOGEN TO ALCOHOLS LIQUID LIGHT, INC. (US) 2014-10-02 WO disclosed
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US-8835102-B2 Patterning process and composition for forming silicon-containing film usable therefor SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-16 US disclosed
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US-20140206896-A1 Method and System for Production of Oxalic Acid and Oxalic Acid Reduction Products LIQUID LIGHT, INC. (US) 2014-07-24 US disclosed
US-20140206895-A1 Method and System for Production of Oxalic Acid and Oxalic Acid Reduction Products LIQUID LIGHT, INC. (US) 2014-07-24 US disclosed
US-20140206894-A1 Method and System for Production of Oxalic Acid and Oxalic Acid Reduction Products LIQUID LIGHT, INC. (US) 2014-07-24 US disclosed
WO-2014100828-A1 METHOD AND SYSTEM FOR PRODUCTION OF OXALIC ACID AND OXALIC ACID REDUCTION PRODUCTS LIQUID LIGHT, INC. (US) 2014-06-26 WO disclosed
EP-2172807-B1 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process SHINETSU CHEMICAL CO (JP) 2014-06-18 EP disclosed
WO-2014086846-A2 POSITIVE WORKING PHOTOSENSITIVE MATERIAL AZ Electronic Materials (Luxembourg) S.à.r.l. (LU) 2014-06-12 WO disclosed
US-20140154624-A1 POSITIVE WORKING PHOTOSENSITIVE MATERIAL AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L. (US) 2014-06-05 US disclosed
EP-2172808-B1 Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process SHINETSU CHEMICAL CO (JP) 2014-06-04 EP disclosed
WO-2014046790-A1 ELECTROCHEMICAL CO-PRODUCTION OF A GLYCOL AND AN ALKENE EMPLOYING RECYCLED HALIDE LIQUID LIGHT, INC. (US) 2014-03-27 WO disclosed
WO-2014046797-A2 ELECTROCHEMICAL CO-PRODUCTION OF CHEMICALS UTILIZING A HALIDE SALT LIQUID LIGHT, INC. (US) 2014-03-27 WO disclosed
US-8652750-B2 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-18 US disclosed
US-8652267-B2 Coated-type silicon-containing film stripping process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-18 US disclosed
US-8618595-B2 Applications of light-emitting nanoparticles MERCK PATENT GMBH (DE) 2013-12-31 US disclosed
WO-2013185989-A1 POSITIVE PHOTOSENSITIVE MATERIAL AZ Electronic Materials (Luxembourg) S.à.r.l. (LU) 2013-12-19 WO disclosed
US-20130337380-A1 POSITIVE PHOTOSENSITIVE MATERIAL AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L. (US) 2013-12-19 US disclosed
EP-2196858-B1 Coated-type silicon-containing film stripping process SHINETSU CHEMICAL CO (JP) 2013-12-04 EP disclosed
US-20130230435-A1 Electrochemical Co-Production of a Glycol and an Alkene Employing Recycled Halide LIQUID LIGHT, INC. (US) 2013-09-05 US disclosed
US-8501386-B2 Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-06 US disclosed
US-8496893-B2 Method of forming a dielectric powder using a precipitated precursor powder EESTOR, INC. (US) 2013-07-30 US disclosed
US-20130137898-A1 Electrochemical Co-Production of Chemicals Utilizing a Halide Salt LIQUID LIGHT, INC. (US) 2013-05-30 US disclosed
US-8444844-B1 Electrochemical co-production of a glycol and an alkene employing recycled halide LIQUID LIGHT, INC. (US) 2013-05-21 US disclosed
US-20130116474-A1 Electrochemical Co-Production of a Glycol and an Alkene Employing Recycled Halide LIQUID LIGHT, INC. (US) 2013-05-09 US disclosed
CN-101475493-B Preparation method of organic anion-cation pair USTC UNIV SCIENCE TECH CN 2013-01-23 CN disclosed
US-8329376-B2 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-11 US disclosed
EP-2274255-B1 PROCESS FOR PREPARING ADVANCED CERAMIC POWDER USING ONIUM DICARBOXYLATES SACHEM INC (US) 2012-10-10 EP disclosed
US-20120238095-A1 PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-09-20 US disclosed
EP-2500775-A2 Patterning process and composition for forming silicon-containing film usable therefor Shin-Etsu Chemical Co., Ltd. (JP) 2012-09-19 EP disclosed
WO-2012115910-A2 POWER SUPPLY AND POWER CONTROL CIRCUITRY EESTOR, INC. (US) 2012-08-30 WO disclosed
US-20120212987-A1 POWER SUPPLY AND POWER CONTROL CIRCUITRY EESTOR, INC. (US) 2012-08-23 US disclosed
CN-102603448-A Method for performing metal catalytic coupling reaction by utilizing organic anion-cation pair USTC UNIV SCIENCE TECH CN 2012-07-25 CN disclosed
CN-102532176-A Ammonium oxalyldifluoro borate electrolyte and preparation method and purification method thereof CHANGCHUN APPLIED CHEMISTRY 2012-07-04 CN disclosed
CN-102482136-A Horizontal fused quartz furnace and assembly EESTOR INC 2012-05-30 CN disclosed
EP-2445844-A2 FUSED QUARTZ HORIZONTAL FURNACE AND ASSEMBLY Eestor, Inc. (US) 2012-05-02 EP disclosed
US-8163633-B2 Light-emitting nanoparticles and method of making same MERCK PATENT GMBH (DE) 2012-04-24 US disclosed
EP-2426558-A1 Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2012-03-07 EP disclosed
US-20120052685-A1 SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM-FORMED SUBSTRATE, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-01 US disclosed
EP-2063319-B1 Metal oxide-containing film-forming composition, multilayer resist and method of formation of pattern in a substrate SHINETSU CHEMICAL CO (JP) 2011-11-02 EP disclosed
US-8029974-B2 Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-04 US disclosed
US-8026038-B2 Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-27 US disclosed
US-20110171789-A1 LIGHT-EMITTING NANOPARTICLES AND METHOD OF MAKING SAME PINON TECHNOLOGIES, INC. 2011-07-14 US disclosed
EP-2011798-B1 Preparation of platinum (II) complexes PLATCO TECHNOLOGIES PROPRIETARY LTD (ZA) 2011-06-29 EP disclosed
US-7956208-B2 Preparation of platinum (II) complexes PLATCO TECHNOLOGIES (PROPRIETARY) LIMITED (ZA) 2011-06-07 US disclosed
US-7888523-B2 Preparation of platinum(II) complexes PLATCO TECHNOLOGIES (PROPRIETARY) LIMITED (ZA) 2011-02-15 US disclosed
US-7875417-B2 Heat curable; mixture of hydrolytic condensation of a silicon compound using acid catalyst; second compound is hydrolytic condensation of a silicon compound in presence of basic catalyst; hydroxide or organic acid salt of Group 1a metal; organic acid; alcohol containing ether groups and solvent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-01-25 US disclosed
EP-2274255-A2 PROCESS FOR PREPARING ADVANCED CERAMIC POWDER USING ONIUM DICARBOXYLATES Sachem, Inc. (US) 2011-01-19 EP disclosed
US-7867471-B2 Process for preparing advanced ceramic powders using onium dicarboxylates SACHEM, INC. (US) 2011-01-11 US disclosed
US-20100331169-A1 FUSED QUARTZ HORIZONTAL FURNACE AND ASSEMBLY EESTOR, INC. (US) 2010-12-30 US disclosed
WO-2010151786-A2 FUSED QUARTZ HORIZONTAL FURNACE AND ASSEMBLY EESTOR, INC. (US) 2010-12-29 WO disclosed
US-7855043-B2 Hydrolytic condensation of organosilicon compound using acid and basic catalyst with Group 1a hydroxide, organic acid and solvent; efficiency patterning photoresist film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-12-21 US disclosed
US-20100285947-A1 Method of Preparing Ceramic Powders EESTOR, INC. (US) 2010-11-11 US disclosed
US-20100285316-A1 Method of Preparing Ceramic Powders EESTOR, INC. (US) 2010-11-11 US disclosed
US-20100147334-A1 Coated-type silicon-containing film stripping process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-17 US disclosed
EP-2196858-A1 Coated-type silicon-containing film stripping process Shin-Etsu Chemical Co., Ltd. (JP) 2010-06-16 EP disclosed
US-7722953-B2 Light-emitting nanoparticles comprising octanol as a passivating agent, and method of making same Korgel, Brian A. (US) 2010-05-25 US disclosed
US-20100086870-A1 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-08 US disclosed
US-20100086872-A1 Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-08 US disclosed
EP-2172808-A1 Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process Shinetsu Chemical Co., Ltd. (JP) 2010-04-07 EP disclosed
EP-2172807-A1 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process Shinetsu Chemical Co., Ltd. (JP) 2010-04-07 EP disclosed
US-7670581-B2 thermally decomposing organometallic material consisting of of silicon, germanium and tin in fluidic medium of alcohols, amines, and/or mercaptans Korgel, Brian A. (US) 2010-03-02 US disclosed
WO-2010011373-A2 PROCESS FOR PREPARING ADVANCED CERAMIC POWDER USING ONIUM DICARBOXYLATES SACHEM, INC. (US) 2010-01-28 WO disclosed
US-20090299085-A1 PREPARATION OF PLATINUM(II) COMPLEXES PLATCO TECHNOLOGIES (PROPRIETARY) LIMITED (ZA) 2009-12-03 US disclosed
US-20090281319-A1 PREPARATION OF PLATINUM (II) COMPLEXES PLATCO TECHNOLOGIES (PROPRIETARY) LIMITED (ZA) 2009-11-12 US disclosed
US-20090250850-A1 PROCESS FOR PREPARING ADVANCED CERAMIC POWDERS USING ONIUM DICARBOXYLATES SACHEM, INC. 2009-10-08 US disclosed
US-7589225-B2 Preparation of platinum(II) complexes PLATCO TECHNOLOGIES (PROPRIETARY) LIMITED (ZA) 2009-09-15 US disclosed
CN-101475493-A Preparation method of organic anion-cation pair and method for carrying out metal catalytic coupling reaction USTC UNIV SCIENCE TECH CN (CN) 2009-07-08 CN disclosed
US-20090136869-A1 METAL OXIDE-CONTAINING FILM-FORMING COMPOSITION, METAL OXIDE-CONTAINING FILM, METAL OXIDE-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-05-28 US disclosed
EP-2063319-A1 Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2009-05-27 EP disclosed
EP-1789427-B1 PREPARATION OF PLATINUM(II) COMPLEXES PLATCO TECHNOLOGIES PROPRIETAR (ZA) 2009-05-20 EP disclosed
US-20090074649-A1 thermally decomposing organometallic material consisting of of silicon, germanium and tin in fluidic medium of alcohols, amines, and/or mercaptans MERCK PATENT GMBH (DE) 2009-03-19 US disclosed
US-7501080-B2 Electrically conductive polymer member, transfer roller, and image forming device BRIDGESTONE CORPORATION (JP) 2009-03-10 US disclosed
EP-1845132-B1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHINETSU CHEMICAL CO (JP) 2009-01-21 EP disclosed
US-20090011372-A1 SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
EP-2011798-A1 Preparation of platinum (II) complexes Platco Technologies (Proprietary) Limited (ZA) 2009-01-07 EP disclosed
EP-2011830-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2009-01-07 EP disclosed
EP-2011829-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2009-01-07 EP disclosed
EP-1867681-B1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHINETSU CHEMICAL CO (JP) 2008-12-31 EP disclosed
US-20080274432-A1 SILICONE-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-11-06 US disclosed
EP-1979369-A1 PREPARATION OF PLATINUM (LL) COMPLEXES Platco Technologies (Proprietary) Limited (ZA) 2008-10-15 EP disclosed
US-20080064895-A1 Preparation of Platinum(II) Complexes PLATCO TECHNOLOGIES (PROPRIETARY) LIMITED (ZA) 2008-03-13 US disclosed
US-20080026322-A1 Hydrolytic condensation of organosilicon compound using acid and basic catalyst with Group 1a hydroxide, organic acid and solvent; efficiency patterning photoresist film SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
EP-1867681-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2007-12-19 EP disclosed
EP-1845132-A2 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shinetsu Chemical Co., Ltd. (JP) 2007-10-17 EP disclosed
US-20070238300-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHIN-ETSU CHEMICAL CO., LTD. 2007-10-11 US disclosed
WO-2007085957-A1 PREPARATION OF PLATINUM (LL) COMPLEXES PLATCO TECHNOLOGIES (PROPRIETARY) LIMITED (ZA) 2007-08-02 WO disclosed
US-20070152193-A1 Electrically conductive polymer member, transfer roller, and image forming device BRIDGESTONE CORPORATION (JP) 2007-07-05 US disclosed
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
EP-1789427-A1 PREPARATION OF PLATINUM(II) COMPLEXES Platco Technologies (Proprietary) Limited (ZA) 2007-05-30 EP disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
US-7128976-B2 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2006-10-31 US disclosed
WO-2006024897-A1 PREPARATION OF PLATINUM(II) COMPLEXES PLATCO TECHNOLOGIES (PROPRIETARY) LIMITED (ZA) 2006-03-09 WO disclosed
US-20050266697-A1 Light-emitting nanoparticles and method of making same THE UNIVERSITY OF TEXAS SYSTEM, BOARD OF REGENTS 2005-12-01 US disclosed
US-20050267345-A1 Applications of light-emitting nanoparticles THE UNIVERSITY OF TEXAS SYSTEM, BOARD OF REGENTS 2005-12-01 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-6918946-B2 Improved chemical stability/crystal structure; light emitting diodes BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM (US) 2005-07-19 US disclosed
US-6846565-B2 Heating a mixture of a metal compound, especially a Group IV metal organometallic precursor, and a capping agent (especially one that provides oxidation resistance) at a temperature wherein the precursor decomposes BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM (US) 2005-01-25 US disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed
US-20030091838-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2003-05-15 US disclosed
US-20030034486-A1 Applications of light-emitting nanoparticles MERCK PATENT GMBH (DE) 2003-02-20 US disclosed
US-20030003300-A1 Heating a mixture of a metal compound, especially a Group IV metal organometallic precursor, and a capping agent (especially one that provides oxidation resistance) at a temperature wherein the precursor decomposes MERCK PATENT GMBH (DE) 2003-01-02 US disclosed
EP-1142049-B1 HYDROFLUORIC ACID SCAVENGER DANIONICS AS (DK) 2002-09-18 EP disclosed
US-6346569-B1 DISPERSING FEED POLYSUCCINIMIDE WITH DISPERSANT, REACTING DISPERSED POLYSUCCINIMIDE WITH CROSS-LINKING AGENT MITSUI CHEMICALS, INC. (JP) 2002-02-12 US disclosed
WO-2000042672-A9 HYDROFLUORIC ACID SCAVENGER DANIONICS AS (DK) 2001-11-15 WO disclosed
EP-1142049-A2 HYDROFLUORIC ACID SCAVENGER DANIONICS A/S (DK) 2001-10-10 EP disclosed
US-6229008-B1 CHEMICAL INTERMEDIATES FOR VIRICIDES AND ANTICARCINOGENIC AGENTS SAISCHEK JOERN (AT) 2001-05-08 US disclosed
WO-2000042672-A2 HYDROFLUORIC ACID SCAVENGER DANIONICS A/S (DK) 2000-07-20 WO disclosed
US-6072024-A Production process of cross-linked polyaspartic acid resin MITSUI CHEMICALS, INC. (JP) 2000-06-06 US disclosed
US-6011133-A Laminates of glass or metal and poly(alkylene dicarboxylates) and syntheses thereof BAYLOR UNIVERSITY (US) 2000-01-04 US disclosed
US-5933693-A Electroconductive elastic member and electrophotographic apparatus using same BRIDGESTONE CORPORATION (JP) 1999-08-03 US disclosed
US-5911099-A Electroconductiive member and electrophotogrpahic apparatus BRIDGESTONE CORPORATION (JP) 1999-06-08 US disclosed
US-5837381-A MULTILAYER PROTECTIVE COATING; WEAR AND CORROSION RESISTANCE UNIV BAYLOR (US) 1998-11-17 US disclosed
EP-0866084-A2 Production process of cross-linked polyaspartic acid resin Mitsui Chemicals, Inc. (JP) 1998-09-23 EP disclosed
US-5668224-A TETRAALKYL- OR TRIALKYLAMMONIUM END GROUPS BAYLOR UNIVERSITY 1997-09-16 US disclosed
US-5561212-A Poly(methylene oxalate), a new composition of matter BAYLOR UNIVERSITY (US) 1996-10-01 US disclosed
US-5451643-A PROTECTIVE COATINGS FOR METALS OR GLASS BAYLOR UNIVERSITY (US) 1995-09-19 US disclosed
US-5426218-A Bis (tetraalkylammonium) oxalate BAYLOR UNIVERSITY (US) 1995-06-20 US disclosed
US-5371171-A Poly(methylene oxalate) and precursors thereto BAYLOR UNIVERSITY (US) 1994-12-06 US disclosed
WO-1994020296-A1 POLY (ALKYLENE DICARBOXYLATES) AND SYNTHESES THEREOF BAYLOR UNIVERSITY (US) 1994-09-15 WO disclosed
US-3934977-A COLORIMETRIC, 2,7-BIS(4-CHLORO-2-PHOSPHONOBENZENEAZO)-1,8-DIHYDROXYNAPHTHALENE-3,6 -DISULFONIC ACID AMERICAN HOSPITAL SUPPLY CORPORATION (US) 1976-01-27 US disclosed
US-3934977-A COLORIMETRIC, 2,7-BIS(4-CHLORO-2-PHOSPHONOBENZENEAZO)-1,8-DIHYDROXYNAPHTHALENE-3,6 -DISULFONIC ACID AMERICAN HOSPITAL SUPPLY CORPORATION (US) 1976-01-27 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (17 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20200159120-A1 THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS RPS4X, SIK3, MLX SLC22A1 1843/4885SLC22A2 1825/4885ALDH1A1 4644/4885
US-20190224660-A1 SELECTIVE PORPHYRIN-CATALYZED ELECTROCHEMICAL REDUCTION OF CO2 INTO CO, IN PARTICULAR IN WATER CYC1, TFRC, PYCR1 SLC22A1 1222/4885SLC22A2 1622/4885ALDH1A1 2261/4885
US-12332567-B2 Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound SMC1A, CDH1, SMC4 SLC22A1 4268/4885SLC22A2 4542/4885ALDH1A1 1586/4885
US-20090299085-A1 PREPARATION OF PLATINUM(II) COMPLEXES SLCO4C1, OTC, SLC10A6 SLC22A1 283/4885SLC22A2 261/4885ALDH1A1 3900/4885
US-20220221793-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND SILICON COMPOUND SMC1A, CDH1, SMC4 SLC22A1 4268/4885SLC22A2 4542/4885ALDH1A1 1586/4885
US-20080064895-A1 Preparation of Platinum(II) Complexes SLCO4C1, SLC10A6, OTC SLC22A1 272/4885SLC22A2 254/4885ALDH1A1 3885/4885
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS ASH2L, PUF60, IDUA SLC22A1 1953/4885SLC22A2 2428/4885ALDH1A1 4472/4885
US-20090281319-A1 PREPARATION OF PLATINUM (II) COMPLEXES OAT, OTC, POLR2E SLC22A1 857/4885SLC22A2 702/4885ALDH1A1 1641/4885
US-12332565-B2 Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process RPS4X, SIK3, MLX SLC22A1 1843/4885SLC22A2 1825/4885ALDH1A1 4644/4885
US-20260029706-A1 COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPER STRAIGHT SMC2, F12, SMC1A SLC22A1 2667/4885SLC22A2 3137/4885ALDH1A1 1644/4885
US-20230333472-A1 THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS RPS4X, SIK3, MLX SLC22A1 1843/4885SLC22A2 1825/4885ALDH1A1 4644/4885
US-20260118767-A1 REVERSE PATTERNING PROCESS EFNA1, EPHA4, ETV6 SLC22A1 4619/4885SLC22A2 4601/4885ALDH1A1 4452/4885
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SMC1A, SPOUT1, LBR SLC22A1 2467/4885SLC22A2 2619/4885ALDH1A1 1558/4885
US-11914295-B2 Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process RPS4X, SIK3, MLX SLC22A1 1843/4885SLC22A2 1825/4885ALDH1A1 4644/4885
US-20250237953-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SMURF1, OSR1, SIK1 SLC22A1 1154/4885SLC22A2 1999/4885ALDH1A1 4150/4885
US-20160257702-A1 Copper Complex for Capturing Carbon Dioxide AOC2, AOC3, MT-CO2 SLC22A1 2549/4885SLC22A2 2460/4885ALDH1A1 2106/4885
US-12619149-B2 DNQ-free chemically amplified resist composition POLQ, RECQL, RPA1 SLC22A1 4808/4885SLC22A2 4800/4885ALDH1A1 983/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.