Known targets — ChEMBL curated mechanism
ABL1ACEACHEACVR1ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALKAVPR1AAVPR2BCHEBCRCA2CACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCASRCCR5CDK4CDK6CFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNA3CHRNA7CHRNB1CHRNB4CHRNDCHRNECHRNGCOXFA4COXFA4L2CRBNCSF1RCUL4ACYP19A1DDB1DPP4DRD1DRD2DRD3DRD4EDNRAEGFREML4ERBB2ERBB4ESR1ESR2FGFR1FGFR3FLT1FLT3FLT4GAAGABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGHSRGLAGNRHRGPD2GRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BGSTP1HCN4HCRTR1HCRTR2HDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HRH2HRH3HSD11B1HSP90AA1HSP90AB1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IMPDH1IMPDH2ITGA2BITGB3ITKJAK1JAK2KCNA1KCNA10KCNA2KCNA3KCNA4KCNA5KCNA6KCNA7KCNB1KCNB2KCNC1KCNC2KCNC3KCNC4KCND1KCND2KCND3KCNF1KCNG1KCNG2KCNG3KCNG4KCNH1KCNH2KCNH3KCNH4KCNH5KCNH6KCNH7KCNH8KCNJ2KCNJ3KCNJ5KCNK3KCNK9KCNQ1KCNQ2KCNQ3KCNQ4KCNQ5KCNS1KCNS2KCNS3KCNV1KCNV2KDRKITKLKB1LCKMMAOAMAOBMAPK14METMMP1MMP13MMP7MMP8MT-ND1MT-ND2MT-ND3MT-ND4MT-ND4LMT-ND5MT-ND6NDUFA1NDUFA10NDUFA11NDUFA12NDUFA13NDUFA2NDUFA3NDUFA5NDUFA6NDUFA7NDUFA8NDUFA9NDUFAB1NDUFAF1NDUFAF2NDUFAF3NDUFAF4NDUFB1NDUFB10NDUFB11NDUFB2NDUFB3NDUFB4NDUFB5NDUFB6NDUFB7NDUFB8NDUFB9NDUFC1NDUFC2NDUFS1NDUFS2NDUFS3NDUFS4NDUFS5NDUFS6NDUFS7NDUFS8NDUFV1NDUFV2NDUFV3NR3C1NS5ANTRK1NTRK2NTRK3ODC1OPRD1OPRK1OPRM1P2RY12PAHPARP1PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDE5APDE7APDE7BPDE8APDE8BPDGFRAPDGFRBPIK3CAPIK3CDPNPPOLA1POLA2POLD1POLD2POLD3POLD4POLEPOLE2POLE3PPARGPRIM1PRIM2PRKCAPRKCBPRKCDPRKCEPRKCGPRKCHPRKCIPRKCQPRKCZPRKD1PRKD3PTGS1PTGS2RBX1RENRETROCK1ROCK2RPE65RRM1RRM2RRM2BS1PR1S1PR2S1PR3S1PR4S1PR5SCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC18A2SLC6A1SLC6A2SLC6A3SLC6A4SLC9A3SRCTACR1TOP1TOP2ATOP2BTTRTYMPdacAdacBdacCembAfolAftsIgyrAgyrBmrcAmrcBmrdAparCparEpolrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of Hydrochloric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CTSD | P07339 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2230540 | 0.73 | CTSD (0.43) | CTSD | |
| Hydrochloric Acid SCHEMBL6813959 | 0.71 | CTSD (0.33) | CTSD | |
| Hydrochloric Acid SCHEMBL8060243 | 0.71 | CTSD (0.33) | CTSD | |
| Hydrochloric Acid SCHEMBL1971877 | 0.71 | CTSD (0.33) | CTSD | |
| Hydrochloric Acid SCHEMBL708752 | 0.69 | CTSD (0.32) | CTSD | |
| Ethane SCHEMBL9190139 | 0.69 | CTSD (0.32) | CTSD | |
| Hydrochloric Acid SCHEMBL9079394 | 0.67 | CTSD (0.31) | CTSD | |
| SCHEMBL6235822 | 0.67 | CTSD (0.35) | CTSD | |
| SCHEMBL28961651 | 0.65 | CTSD (0.38) | CTSD | |
| Hydrochloric Acid SCHEMBL23388159 | 0.65 | CTSD (0.33) | CTSD |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20120035056-A1 | Nb-DOPED PEROVSKITE FLUX PINNING OF REBCO BASED SUPERCONDUCTORS BY MOCVD | U.S. DEPARTMENT OF ENERGY | 2012-02-09 | — | — | US | claimed |
| US-20120035056-A1 | Nb-DOPED PEROVSKITE FLUX PINNING OF REBCO BASED SUPERCONDUCTORS BY MOCVD | U.S. DEPARTMENT OF ENERGY | 2012-02-09 | — | — | US | disclosed |
| US-6348376-B2 | FIRST FLOWING A METAL SOURCE INTO A DEPOSITION CHAMBER HAVING SEMICONDUCTOR SUBSTRATE, STOPPING FLOW OF METAL, PURGING, STOPPING PURGE GAS AND FLOWING NITROGEN SOURCE GAS, PURGING; STEP COVERAGE, LOW IMPURITY CONCENTRATION AND LOW RESISTIVITY | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-02-19 | — | — | US | disclosed |
| US-20010034097-A1 | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2001-10-25 | — | — | US | disclosed |
| US-6303805-B1 | COMPLEX FOR OLEFIN OR STYRENE POLYMERIZATION PREPARED BY REACTING TRANSITION METAL COMPLEX AND COMPOUND HAVING AT LEAST TWO FUNCTIONAL GROUPS, HAVING STRUCTURE IN WHICH ANCILLARY LIGANDS OF COMPLEX ARE BRIDGED WITH SAID FUNCTIONAL GROUP | SAMSUNG GENERAL CHEMICAL CO., LTD. (KR) | 2001-10-16 | — | — | US | disclosed |
| US-6197683-B1 | Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2001-03-06 | — | — | US | disclosed |
| EP-1006120-A2 | Metallocene complexes and method of preparing the same | Samsung General Chemicals Co., Ltd. (KR) | 2000-06-07 | — | — | EP | disclosed |