Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP2D6 | P10635 | 2/20 | 0.42 |
| ▸ | NR1I2 | O75469 | 1/20 | 0.42 |
| ▸ | LMNA | P02545 | 1/20 | 0.42 |
| ▸ | ADRA2A | P08913 | 1/20 | 0.42 |
| ▸ | ACHE | P22303 | 1/20 | 0.42 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.42 |
| ▸ | HTR2A | P28223 | 1/20 | 0.42 |
| ▸ | SLC6A4 | P31645 | 1/20 | 0.42 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.42 |
| ▸ | SIGMAR1 | Q99720 | 1/20 | 0.42 |
| ▸ | MEN1 | O00255 | 1/20 | 0.41 |
| ▸ | HPGD | P15428 | 1/20 | 0.41 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.41 |
| ▸ | HSD17B2 | P37059 | 1/20 | 0.37 |
| ▸ | NLRP3 | Q96P20 | 1/20 | 0.35 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.35 |
| ▸ | NQO2 | P16083 | 1/20 | 0.34 |
| ▸ | NR3C1 | P04150 | 1/20 | 0.34 |
| ▸ | NR3C2 | P08235 | 1/20 | 0.34 |
| ▸ | CA2 | P00918 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL647379 | 0.75 | CA1 (0.41) | CYP2D6NR1I2LMNAADRA2AACHE | |
| SCHEMBL565631 | 0.75 | ALDH1A1 (0.36) | MEN1HPGDKMT2ACA2RORA | |
| SCHEMBL1270050 | 0.75 | HSD11B1 (0.39) | MEN1KMT2AHSD17B2CA2 | |
| SCHEMBL29478300 | 0.74 | NR1I2 (0.43) | CYP2D6NR1I2LMNAADRA2AACHE | |
| SCHEMBL501669 | 0.74 | NR1I2 (0.43) | CYP2D6NR1I2LMNAADRA2AACHE | |
| SCHEMBL36628 | 0.73 | CA1 (0.40) | MEN1HPGDKMT2AHSD17B2CA2 | |
| SCHEMBL29058341 | 0.72 | MEN1 (0.42) | CYP2D6NR1I2LMNAADRA2AACHE | |
| SCHEMBL3828157 | 0.70 | CA1 (0.38) | LMNAMEN1HPGDKMT2ACA2 | |
| SCHEMBL3174085 | 0.70 | CA1 (0.38) | LMNAMEN1HPGDKMT2ACA2 | |
| SCHEMBL384620 | 0.69 | TDP1 (0.39) | MEN1KMT2ANQO2NR3C1NR3C2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 93 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260133490-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-05-14 | — | — | US | disclosed |
| US-20260050213-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-19 | — | — | US | disclosed |
| US-20260049053-A1 | ONIUM SALT, PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-19 | — | — | US | disclosed |
| US-20260029713-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-29 | — | — | US | disclosed |
| US-20260003266-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-01 | — | — | US | disclosed |
| US-20250370336-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-04 | — | — | US | disclosed |
| US-20250276954-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-04 | — | — | US | disclosed |
| US-20250122165-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-04-17 | — | — | US | disclosed |
| US-20250053087-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-02-13 | — | — | US | disclosed |
| US-12216401-B2 | Sulfonium salt, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-02-04 | — | — | US | disclosed |
| EP-2081083-A1 | Positive resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-07-22 | — | — | EP | disclosed |
| EP-2081085-A1 | Positive resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-07-22 | — | — | EP | disclosed |
| EP-2081084-A1 | Positive resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-07-22 | — | — | EP | disclosed |
| US-7527912-B2 | Photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-05-05 | — | — | US | disclosed |
| EP-2033966-A2 | Movel photoacid generators, resist compositons, and patterning processes | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-03-11 | — | — | EP | disclosed |
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | PROXIMAL SYSTEMS CORPORATION | 2009-03-05 | — | — | US | disclosed |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-29 | — | — | US | disclosed |
| US-20080102407-A1 | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-04-10 | — | — | US | disclosed |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-27 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (14 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | RER1, CRY1, CYP21A2 | CYP2D6 1010/4885NR1I2 640/4885LMNA 3801/4885 |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, HCN4 | CYP2D6 772/4885NR1I2 1962/4885LMNA 3551/4885 |
| US-20260003266-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | LEF1, EIF2S1, NHERF1 | CYP2D6 4415/4885NR1I2 2212/4885LMNA 871/4885 |
| US-20250276954-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | LIFR, SLC6A5, LEF1 | CYP2D6 4646/4885NR1I2 3392/4885LMNA 447/4885 |
| US-20250370336-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | LIFR, INSR, FGR | CYP2D6 4290/4885NR1I2 3464/4885LMNA 824/4885 |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, TST | CYP2D6 1250/4885NR1I2 2833/4885LMNA 3638/4885 |
| US-12216401-B2 | Sulfonium salt, chemically amplified resist composition, and patterning process | ETV6, KAT5, PKD1 | CYP2D6 3737/4885NR1I2 2327/4885LMNA 3488/4885 |
| US-20260133490-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS | NAF1, FOXM1, CACNA1F | CYP2D6 2847/4885NR1I2 2497/4885LMNA 1916/4885 |
| US-20080085469-A1 | Novel photoacid generators, resist compositions, and patterning process | RER1, SCO2, ASIC3 | CYP2D6 1160/4885NR1I2 1370/4885LMNA 3936/4885 |
| US-20260050213-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | CA2, NAP1L1, ARCN1 | CYP2D6 4127/4885NR1I2 744/4885LMNA 777/4885 |
| US-20260049053-A1 | ONIUM SALT, PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | ARCN1, CSNK1A1L, CSNK2A1 | CYP2D6 3244/4885NR1I2 753/4885LMNA 1777/4885 |
| US-20260029713-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | NHERF1, NAF1, CACNA1F | CYP2D6 3206/4885NR1I2 2073/4885LMNA 1302/4885 |
| US-20250122165-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | ETV6, RUVBL2, RUVBL1 | CYP2D6 4353/4885NR1I2 3366/4885LMNA 685/4885 |
| US-20250053087-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | NHERF1, HCN4, HCN3 | CYP2D6 1617/4885NR1I2 1373/4885LMNA 3127/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.