Known targets — ChEMBL curated mechanism
ABL1ACEACHEACVR1ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALKAVPR1AAVPR2BCHEBCRCA2CACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCASRCCR5CDK4CDK6CFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNA3CHRNA7CHRNB1CHRNB4CHRNDCHRNECHRNGCOXFA4COXFA4L2CRBNCSF1RCUL4ACYP19A1DDB1DPP4DRD1DRD2DRD3DRD4EDNRAEGFREML4ERBB2ERBB4ESR1ESR2FGFR1FGFR3FLT1FLT3FLT4GAAGABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGHSRGLAGNRHRGPD2GRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BGSTP1HCN4HCRTR1HCRTR2HDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HRH2HRH3HSD11B1HSP90AA1HSP90AB1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IMPDH1IMPDH2ITGA2BITGB3ITKJAK1JAK2KCNA1KCNA10KCNA2KCNA3KCNA4KCNA5KCNA6KCNA7KCNB1KCNB2KCNC1KCNC2KCNC3KCNC4KCND1KCND2KCND3KCNF1KCNG1KCNG2KCNG3KCNG4KCNH1KCNH2KCNH3KCNH4KCNH5KCNH6KCNH7KCNH8KCNJ2KCNJ3KCNJ5KCNK3KCNK9KCNQ1KCNQ2KCNQ3KCNQ4KCNQ5KCNS1KCNS2KCNS3KCNV1KCNV2KDRKITKLKB1LCKMMAOAMAOBMAPK14METMMP1MMP13MMP7MMP8MT-ND1MT-ND2MT-ND3MT-ND4MT-ND4LMT-ND5MT-ND6NDUFA1NDUFA10NDUFA11NDUFA12NDUFA13NDUFA2NDUFA3NDUFA5NDUFA6NDUFA7NDUFA8NDUFA9NDUFAB1NDUFAF1NDUFAF2NDUFAF3NDUFAF4NDUFB1NDUFB10NDUFB11NDUFB2NDUFB3NDUFB4NDUFB5NDUFB6NDUFB7NDUFB8NDUFB9NDUFC1NDUFC2NDUFS1NDUFS2NDUFS3NDUFS4NDUFS5NDUFS6NDUFS7NDUFS8NDUFV1NDUFV2NDUFV3NR3C1NS5ANTRK1NTRK2NTRK3ODC1OPRD1OPRK1OPRM1P2RY12PAHPARP1PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDE5APDE7APDE7BPDE8APDE8BPDGFRAPDGFRBPIK3CAPIK3CDPNPPOLA1POLA2POLD1POLD2POLD3POLD4POLEPOLE2POLE3PPARGPRIM1PRIM2PRKCAPRKCBPRKCDPRKCEPRKCGPRKCHPRKCIPRKCQPRKCZPRKD1PRKD3PTGS1PTGS2RBX1RENRETROCK1ROCK2RPE65RRM1RRM2RRM2BS1PR1S1PR2S1PR3S1PR4S1PR5SCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC18A2SLC6A1SLC6A2SLC6A3SLC6A4SLC9A3SRCTACR1TOP1TOP2ATOP2BTTRTYMPdacAdacBdacCembAfolAftsIgyrAgyrBmrcAmrcBmrdAparCparEpolrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of Hydrochloric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GAA known ✓ | P10253 | 2/20 | 0.38 |
| ▸ | NPC1 | O15118 | 5/20 | 0.41 |
| ▸ | RAB9A | P51151 | 5/20 | 0.41 |
| ▸ | SMN1; SMN2 | Q16637 | 5/20 | 0.41 |
| ▸ | PDK1 | Q15118 | 1/20 | 0.41 |
| ▸ | PDK2 | Q15119 | 1/20 | 0.41 |
| ▸ | PDK3 | Q15120 | 1/20 | 0.41 |
| ▸ | PDK4 | Q16654 | 1/20 | 0.41 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.41 |
| ▸ | TSHR | P16473 | 3/20 | 0.41 |
| ▸ | MEN1 | O00255 | 2/20 | 0.41 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.41 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.41 |
| ▸ | POLB | P06746 | 1/20 | 0.40 |
| ▸ | HTT | P42858 | 3/20 | 0.38 |
| ▸ | MAPT | P10636 | 3/20 | 0.38 |
| ▸ | NLRP1 | Q9C000 | 1/20 | 0.38 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.37 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.37 |
| ▸ | LMNA | P02545 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL19809927 | 0.98 | NPC1 (0.42) | NPC1RAB9ASMN1; SMN2PDK1PDK2 | |
| Hydrochloric Acid SCHEMBL237195 | 0.98 | NPC1 (0.42) | NPC1RAB9ASMN1; SMN2PDK1PDK2 | |
| SCHEMBL22462283 | 0.98 | NPC1 (0.42) | NPC1RAB9ASMN1; SMN2PDK1PDK2 | |
| Hydrochloric Acid SCHEMBL1487338 | 0.98 | NPC1 (0.42) | NPC1RAB9ASMN1; SMN2PDK1PDK2 | |
| SCHEMBL3863419 | 0.96 | NPC1 (0.44) | NPC1RAB9ASMN1; SMN2PDK1PDK2 | |
| SCHEMBL3863416 | 0.96 | NPC1 (0.44) | NPC1RAB9ASMN1; SMN2PDK1PDK2 | |
| SCHEMBL5349175 | 0.85 | SMN1; SMN2 (0.36) | NPC1RAB9ASMN1; SMN2PDK1PDK2 | |
| Hydrochloric Acid SCHEMBL3893006 | 0.82 | MAPT (0.42) | NPC1RAB9AALDH1A1TSHRMEN1 | |
| Hydrochloric Acid SCHEMBL235512 | 0.82 | MAPT (0.42) | NPC1RAB9AALDH1A1TSHRMEN1 | |
| Hydrochloric Acid SCHEMBL3925322 | 0.81 | MAPT (0.42) | NPC1RAB9ASMN1; SMN2ALDH1A1MEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3650499-B1 | ELECTROCONDUCTIVE RESIN COMPOSITION AND METHOD FOR MANUFACTURING SHIELDED PACKAGE USING SAME | TATSUTA ELECTRIC WIRE & CABLE CO LTD (JP) | 2023-11-08 | — | — | EP | disclosed |
| US-20230151228-A1 | CONDUCTIVE COMPOSITION AND METHOD FOR PRODUCING SHIELDED PACKAGE USING SAME | TATSUTA ELECTRIC WIRE & CABLE CO., LTD. (JP) | 2023-05-18 | — | — | US | disclosed |
| US-20220010072-A1 | FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-01-13 | — | — | US | disclosed |
| US-11191198-B2 | Shield package | TATSUTA ELECTRIC WIRE & CABLE CO., LTD. (JP) | 2021-11-30 | — | — | US | disclosed |
| US-20210070683-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-03-11 | — | — | US | disclosed |
| US-20210070727-A1 | COMPOUND, RESIN, COMPOSITION AND PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-03-11 | — | — | US | disclosed |
| US-20210070685-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-03-11 | — | — | US | disclosed |
| US-20210047457-A1 | COMPOUND, RESIN, COMPOSITION AND PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-02-18 | — | — | US | disclosed |
| US-20210003921-A1 | COMPOUND, RESIN, COMPOSITION, AND FILM FORMING MATERIAL FOR LITHOGRAPHY USING THE SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-01-07 | — | — | US | disclosed |
| EP-3760611-A1 | COMPOUND, RESIN, COMPOSITION AND FILM-FORMING MATERIAL FOR LITHOGRAPHY USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2021-01-06 | — | — | EP | disclosed |
| EP-3744710-A1 | COMPOUND, RESIN, COMPOSITION, AND PATTERN FORMING METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-12-02 | — | — | EP | disclosed |
| US-20200361843-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, CIRCUIT PATTERN FORMATION METHOD AND METHOD FOR PURIFYING RESIN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-11-19 | — | — | US | disclosed |
| US-20200354501-A1 | COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, FILM FOR LITHOGRAPHY, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR FORMING CIRCUIT PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-11-12 | — | — | US | disclosed |
| US-20200288608-A1 | SHIELD PACKAGE | TATSUTA ELECTRIC WIRE & CABLE CO., LTD. (JP) | 2020-09-10 | — | — | US | disclosed |
| US-20200247739-A1 | COMPOUND, RESIN, COMPOSITION, PATTERN FORMATION METHOD, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-08-06 | — | — | US | disclosed |
| US-20200166844-A1 | FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-05-28 | — | — | US | disclosed |
| EP-3650499-A1 | ELECTROCONDUCTIVE RESIN COMPOSITION AND METHOD FOR MANUFACTURING SHIELDED PACKAGE USING SAME | Tatsuta Electric Wire & Cable Co., Ltd. (JP) | 2020-05-13 | — | — | EP | disclosed |
| EP-3627224-A1 | FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FORMING FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMING METHOD | Mitsubishi Gas Chemical Company, Inc. (JP) | 2020-03-25 | — | — | EP | disclosed |
| US-20190278180-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2019-09-12 | — | — | US | disclosed |
| EP-3517522-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMING METHOD AND CIRCUIT PATTERN FORMING METHOD | Mitsubishi Gas Chemical Company, Inc. (JP) | 2019-07-31 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20210070683-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD | RER1, RTN4, FEM1B | GAA 4336/4885NPC1 3659/4885RAB9A 1812/4885 |
| US-20210003921-A1 | COMPOUND, RESIN, COMPOSITION, AND FILM FORMING MATERIAL FOR LITHOGRAPHY USING THE SAME | COL1A1, MLLT3, F12 | GAA 3407/4885NPC1 2522/4885RAB9A 1301/4885 |
| US-20200361843-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, CIRCUIT PATTERN FORMATION METHOD AND METHOD FOR PURIFYING RESIN | C5, C9, C1R | GAA 4798/4885NPC1 4114/4885RAB9A 3738/4885 |
| US-20210070727-A1 | COMPOUND, RESIN, COMPOSITION AND PATTERN FORMATION METHOD | RDX, RTN4, CROCC | GAA 2607/4885NPC1 2146/4885RAB9A 1286/4885 |
| US-20190278180-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD | RER1, RTN4, NBAS | GAA 4558/4885NPC1 2881/4885RAB9A 2005/4885 |
| US-20210070685-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD | RER1, RTN4, FEM1B | GAA 4336/4885NPC1 3659/4885RAB9A 1812/4885 |
| US-20200247739-A1 | COMPOUND, RESIN, COMPOSITION, PATTERN FORMATION METHOD, AND PURIFICATION METHOD | CROCC, RDX, RBBP9 | GAA 2301/4885NPC1 2401/4885RAB9A 620/4885 |
| US-20200166844-A1 | FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN | LIPA, LCLAT1, LCAT | GAA 3304/4885NPC1 485/4885RAB9A 402/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.