Predicted protein targets (top 15)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.50 |
| ▸ | TSHR | P16473 | 2/20 | 0.45 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.45 |
| ▸ | MEN1 | O00255 | 2/20 | 0.43 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.43 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.41 |
| ▸ | THRB | P10828 | 1/20 | 0.39 |
| ▸ | HTT | P42858 | 1/20 | 0.39 |
| ▸ | MAPT | P10636 | 1/20 | 0.39 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.37 |
| ▸ | USP2 | O75604 | 1/20 | 0.34 |
| ▸ | MMP9 | P14780 | 1/20 | 0.34 |
| ▸ | MMP8 | P22894 | 1/20 | 0.34 |
| ▸ | MMP14 | P50281 | 1/20 | 0.34 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL11475174 | 0.95 | MEN1 (0.52) | ALDH1A1TSHRMAPK1MEN1KMT2A | |
| SCHEMBL31602144 | 0.95 | MEN1 (0.52) | ALDH1A1TSHRMAPK1MEN1KMT2A | |
| SCHEMBL28658451 | 0.95 | MEN1 (0.52) | ALDH1A1TSHRMAPK1MEN1KMT2A | |
| SCHEMBL2368133 | 0.86 | CYP3A4 (0.48) | ALDH1A1TSHRMAPK1MEN1KMT2A | |
| SCHEMBL31601934 | 0.85 | CYP3A4 (0.47) | ALDH1A1TSHRMEN1KMT2ACYP3A4 | |
| SCHEMBL31602028 | 0.83 | CYP3A4 (0.46) | ALDH1A1TSHRMEN1KMT2ACYP3A4 | |
| SCHEMBL15945782 | 0.83 | TSHR (0.56) | ALDH1A1TSHRMAPK1MEN1KMT2A | |
| SCHEMBL33532 | 0.83 | CYP3A4 (0.65) | ALDH1A1TSHRMEN1KMT2ACYP3A4 | |
| SCHEMBL2367465 | 0.83 | CYP3A4 (0.46) | ALDH1A1TSHRMAPK1MEN1KMT2A | |
| SCHEMBL7265053 | 0.81 | TSHR (0.43) | ALDH1A1TSHRMAPK1MEN1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1212 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3558917-B1 | NOVEL COMPOUND, SEMICONDUCTOR MATERIAL, AND METHODS FOR MANUFACTURING COATING AND SEMICONDUCTOR USING THE SAME | MERCK PATENT GMBH (DE) | 2024-01-24 | — | — | EP | claimed |
| US-11822250-B2 | Solution, method of forming resist pattern, and semiconductor device manufacturing method | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-21 | — | — | US | claimed |
| CN-110088072-B | Novel compound, semiconductor material, film using same, and method for producing semiconductor | 默克专利有限公司 | 2023-05-02 | — | — | CN | claimed |
| US-11450805-B2 | Compound, semiconductor material, and methods for manufacturing coating and semiconductor using the same | MERCK PATENT GMBH (DE) | 2022-09-20 | — | — | US | claimed |
| US-20200044158-A1 | NOVEL COMPOUND, SEMICONDUCTOR MATERIAL, AND METHODS FOR MANUFACTURING COATING AND SEMICONDUCTOR USING THE SAME | MERCK PATENT GMBH (DE) | 2020-02-06 | — | — | US | claimed |
| EP-3558917-A1 | NOVEL COMPOUND, SEMICONDUCTOR MATERIAL, AND METHODS FOR MANUFACTURING COATING AND SEMICONDUCTOR USING THE SAME | Merck Patent GmbH (DE) | 2019-10-30 | — | — | EP | claimed |
| US-10100138-B2 | Dispersant and method for producing same, ink, and method for forming electro-conductive pattern | RICOH COMPANY, LTD. (JP) | 2018-10-16 | — | — | US | claimed |
| WO-2018115043-A1 | NOVEL COMPOUND, SEMICONDUCTOR MATERIAL, AND METHODS FOR MANUFACTURING COATING AND SEMICONDUCTOR USING THE SAME | MERCK PATENT GMBH (DE) | 2018-06-28 | — | — | WO | claimed |
| CN-106010077-A | Building exterior wall coating with good waterproof property and cohesiveness | 芜湖县双宝建材有限公司 | 2016-10-12 | — | — | CN | claimed |
| CN-106009854-A | Waterproof building coating with good toughness | 芜湖县双宝建材有限公司 | 2016-10-12 | — | — | CN | claimed |
| CN-103740229-B | A kind of wear-resistant paint | ANHUI PROVINCE JINDUN PAINT CO., LTD. (CN) | 2015-10-07 | — | — | CN | claimed |
| CN-104927592-A | Modified polyester resin coating for ships | WUHU SHUANGBAO BUILDING MATERIAL CO LTD | 2015-09-23 | — | — | CN | claimed |
| US-20150133356-A1 | PHOTORESIST AND POST ETCH RESIDUE CLEANING SOLUTION | DYNALOY, LLC (US) | 2015-05-14 | — | — | US | claimed |
| US-8987181-B2 | Photoresist and post etch residue cleaning solution | DYNALOY, LLC (US) | 2015-03-24 | — | — | US | claimed |
| CN-103740229-A | Novel wear-resisting coating | ANHUI JINDUN PAINT CO LTD | 2014-04-23 | — | — | CN | claimed |
| US-20130116159-A1 | PHOTORESIST AND POST ETCH RESIDUE CLEANING SOLUTION | DYNALOY, LLC (US) | 2013-05-09 | — | — | US | claimed |
| US-7358317-B2 | Polycarbosilane and method of producing the same | JSR CORPORATION (JP) | 2008-04-15 | — | — | US | claimed |
| US-6818722-B2 | WATER GLASS DILUTED WITH WATER TO A CONCENTRATION OF 3 TO 15 WT % IS REACTED WITH A TRIORGANOHALOSILANE IN PRESENCE OF AN ACID CATALYST AND A SOLVENT TO PRODUCE A LOW VISCOSTY MQ RESIN | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-11-16 | — | — | US | claimed |
| US-5679254-A | ADDING NONIONIC SURFACTANT TO AQUEOUS SALT SOLUTION TO FORM HOMOGENEOUS MIXTURE HAVING FIRST CLOUD POINT, ADJUSTING TEMPERATURE TO CAUSE PHASE SEPARATION, SEPARATING SALT-FREE PHASE, ADJUSTING TEMPERATURE AGAIN TO SEPARATE SURFACTANT | CHEMTURA CORPORATION | 1997-10-21 | — | — | US | claimed |
| EP-4749682-A1 | CURABLE COMPOSITION, FILM FORMING METHOD, AND METHOD FOR PRODUCING ARTICLE | Canon Kabushiki Kaisha (JP) | 2026-05-27 | — | — | EP | disclosed |
| EP-4747233-A2 | COMPOUNDS, COMPOSITIONS CONTAINING COMPOUNDS, AND METHODS OF MANUFACTURING RESIST MEMBRANES | Merck Patent GmbH (DE) | 2026-05-27 | — | — | EP | disclosed |
| CN-122071546-A | Curable composition, film forming method, and method for producing product | 佳能株式会社 | 2026-05-22 | — | — | CN | disclosed |
| US-20260140445-A1 | CURABLE COMPOSITION AND METHODS FOR FORMING FILM AND MANUFACTURING ARTICLE | CANON KK (JP) | 2026-05-21 | — | — | US | disclosed |
| US-12629718-B2 | Film forming method and article manufacturing method | CANON KABUSHIKI KAISHA (JP) | 2026-05-19 | — | — | US | disclosed |
| US-20260126725-A1 | CURABLE COMPOSITION AND METHODS FOR FORMING FILM AND MANUFACTURING ARTICLE | CANON KK (JP) | 2026-05-07 | — | — | US | disclosed |
| EP-4738008-A1 | CURABLE COMPOSITION AND METHODS FOR FORMING FILM AND MANUFACTURING ARTICLE | Canon Kabushiki Kaisha (JP) | 2026-05-06 | — | — | EP | disclosed |
| US-20260117010-A1 | CURABLE COMPOSITION, FILM FORMING METHOD AND ARTICLE MANUFACTURING METHOD | CANON KABUSHIKI KAISHA (JP) | 2026-04-30 | — | — | US | disclosed |
| US-20260118764-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM | NISSAN CHEMICAL CORPORATION (JP) | 2026-04-30 | — | — | US | disclosed |
| US-20260118751-A1 | ORGANOMETALLIC COMPOUND, RESIST COMPOSITION COMPRISING THE SAME, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-30 | — | — | US | disclosed |
| US-20260118757-A1 | RADIATION-SENSITIVE RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-30 | — | — | US | disclosed |
| US-20260110966-A1 | POLYMER, RESIST COMPOSITION INCLUDING THE SAME, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-23 | — | — | US | disclosed |
| US-20260098106-A1 | POLYMER, RESIST COMPOSITION INCLUDING THE SAME, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-09 | — | — | US | disclosed |
| US-20260093178-A1 | POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-02 | — | — | US | disclosed |
| EP-4715465-A1 | MULTILAYER BODY, METHOD FOR PRODUCING MULTILAYER BODY, AND PHOTOSENSITIVE SURFACE MODIFIER | Nissan Chemical Corporation (JP) | 2026-03-25 | — | — | EP | disclosed |
| US-12585189-B2 | Method for manufacturing cured film and use of the same | MERCK PATENT GMBH (DE) | 2026-03-24 | — | — | US | disclosed |
| US-12585188-B2 | Composition for forming resist underlying film | NISSAN CHEMICAL CORPORATION (JP) | 2026-03-24 | — | — | US | disclosed |
| US-20260077385-A1 | FILM FORMING METHOD, CURABLE COMPOSITION, AND ARTICLE MANUFACTURING METHOD | CANON KABUSHIKI KAISHA (JP) | 2026-03-19 | — | — | US | disclosed |
| US-20260063990-A1 | RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-03-05 | — | — | US | disclosed |
| EP-4702403-A1 | RESIST PATTERN FILLING LIQUID AND METHOD FOR MANUFACTURING RESIST PATTERN USING THE SAME | Merck Patent GmbH (DE) | 2026-03-04 | — | — | EP | disclosed |
| CN-121586750-A | Composition for forming silicon-containing underlayer film for directional self-assembly | 日产化学株式会社 | 2026-02-27 | — | — | CN | disclosed |
| US-12559637-B2 | Coloring tablet and water-based ink composition for writing instrument using the same | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2026-02-24 | — | — | US | disclosed |
| US-20260042932-A1 | COMPOSITION, PATTERN FORMING METHOD, AND ARTICLE MANUFACTURING METHOD | CANON KK (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4682213-A1 | OIL-IN-WATER INK COMPOSITION FOR WRITING UTENSILS | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2026-01-21 | — | — | EP | disclosed |
| US-20260016747-A1 | RESIST COMPOSITION AND METHOD OF FORMING PATTERN BY USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-01-15 | — | — | US | disclosed |
| EP-4679175-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | Nissan Chemical Corporation (JP) | 2026-01-14 | — | — | EP | disclosed |
| US-20260010070-A1 | RESIST COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-01-08 | — | — | US | disclosed |
| US-20250377596-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2025-12-11 | — | — | US | disclosed |
| US-12493243-B2 | Film-forming composition | NISSAN CHEMICAL CORPORATION (JP) | 2025-12-09 | — | — | US | disclosed |
| US-20250362609-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYFUNCTIONAL SULFONIC ACID | NISSAN CHEMICAL CORPORATION (JP) | 2025-11-27 | — | — | US | disclosed |
| US-20250355357-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2025-11-20 | — | — | US | disclosed |
| US-20250348001-A1 | METHOD FOR PRODUCING LAMINATE AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT | NISSAN CHEMICAL CORPORATION (JP) | 2025-11-13 | — | — | US | disclosed |
| US-20250347994-A1 | RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-11-13 | — | — | US | disclosed |
| US-20250333554-A1 | POLYMER, RESIST COMPOSITION COMPRISING THE SAME AND PATTERN FORMATION METHOD USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-10-30 | — | — | US | disclosed |
| US-20250333553-A1 | POLYMER, RESIST COMPOSITION INCLUDING THE SAME, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-10-30 | — | — | US | disclosed |
| US-20250334882-A1 | RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-10-30 | — | — | US | disclosed |
| US-12449737-B2 | Pattern forming method, resist material, and pattern forming apparatus | Oji Holdings Corporation (JP) | 2025-10-21 | — | — | US | disclosed |
| US-12441822-B2 | Polymer, semiconductor composition comprising polymer, and method for manufacturing film using semiconductor composition | MERCK PATENT GMBH (DE) | 2025-10-14 | — | — | US | disclosed |
| US-20250312951-A1 | MOLD, MANUFACTURING METHOD, FILM FORMING METHOD, ARTICLE MANUFACTURING METHOD AND IMPRINT APPARATUS | CANON KABUSHIKI KAISHA (JP) | 2025-10-09 | — | — | US | disclosed |
| EP-4628535-A1 | CURABLE COMPOSITION, FILM FORMING METHOD, AND ARTICLE MANUFACTURING METHOD | CANON KABUSHIKI KAISHA (JP) | 2025-10-08 | — | — | EP | disclosed |
| EP-4628553-A1 | OIL-IN-WATER INK COMPOSITION FOR WRITING UTENSILS | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2025-10-08 | — | — | EP | disclosed |
| EP-4623013-A1 | CURABLE COMPOSITION, FILM FORMING METHOD AND ARTICLE MANUFACTURING METHOD | CANON KABUSHIKI KAISHA (JP) | 2025-10-01 | — | — | EP | disclosed |
| EP-4620983-A1 | CURABLE COMPOSITION, FILM FORMATION METHOD, PATTERN FORMATION METHOD, AND ARTICLE PRODUCTION METHOD | CANON KABUSHIKI KAISHA (JP) | 2025-09-24 | — | — | EP | disclosed |
| US-20250289960-A1 | MATERIAL KIT, CURABLE COMPOSITION, FILM FORMING METHOD, AND ARTICLE MANUFACTURING METHOD | CANON KABUSHIKI KAISHA (JP) | 2025-09-18 | — | — | US | disclosed |
| US-20250291247-A1 | AMINE COMPOUND, RESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN BY USING THE RESIST COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-09-18 | — | — | US | disclosed |
| US-20250282968-A1 | WATER-BASED INK COMPOSITION FOR WRITING INSTRUMENT | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2025-09-11 | — | — | US | disclosed |
| EP-4613825-A1 | WATER-BASED INK COMPOSITION FOR WRITING INSTRUMENT | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2025-09-10 | — | — | EP | disclosed |
| US-12372875-B2 | Composition for resist pattern metallization process | NISSAN CHEMICAL CORPORATION (JP) | 2025-07-29 | — | — | US | disclosed |
| US-20250237945-A1 | RESIST COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-07-24 | — | — | US | disclosed |
| US-20250226218-A1 | FILM FORMING METHOD, ARTICLE MANUFACTURING METHOD, AND CURABLE COMPOSITION | CANON KABUSHIKI KAISHA (JP) | 2025-07-10 | — | — | US | disclosed |
| US-20250224679-A1 | RESIST PATTERN FORMATION METHOD | JSR CORPORATION (JP) | 2025-07-10 | — | — | US | disclosed |
| US-20250206901-A1 | BRUSH MATERIAL FOR SELF-ASSEMBLED FILM | NISSAN CHEMICAL CORPORATION (JP) | 2025-06-26 | — | — | US | disclosed |
| CN-120202529-A | Curable composition, film forming method, pattern forming method, and article manufacturing method | 佳能株式会社 | 2025-06-24 | — | — | CN | disclosed |
| US-20250179317-A1 | OIL-BASED INK COMPOSITION FOR WRITING UTENSILS | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2025-06-05 | — | — | US | disclosed |
| EP-3732536-B1 | A NEGATIVE TONE LIFT OFF RESIST COMPOSITION COMPRISING AN ALKALI SOLUBLE RESIN AND CROSS LINKERS AND A METHOD FOR MANUFACTURING METAL FILM PATTERNS ON A SUBSTRATE | MERCK PATENT GMBH (DE) | 2025-06-04 | — | — | EP | disclosed |
| CN-120065654-A | Aqueous developer composition for flexographic printing plate and method for producing flexographic printing plate | 旭化成株式会社 | 2025-05-30 | — | — | CN | disclosed |
| CN-120077110-A | Oil-in-water drop type ink composition for writing instrument | 三菱铅笔株式会社 | 2025-05-30 | — | — | CN | disclosed |
| US-20250172876-A1 | DEVELOPER TOLERANCE RESIST UNDERLAYER COMPOSITION AND METHOD FOR MANUFACTURING RESIST PATTERN | MERCK PATENT GMBH (DE) | 2025-05-29 | — | — | US | disclosed |
| EP-4557005-A2 | POSITIVE TYPE LIFT-OFF RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST PATTERN USING THE SAME | Merck Patent GmbH (DE) | 2025-05-21 | — | — | EP | disclosed |
| CN-120019330-A | Underlying film material for self-assembled materials | 日产化学株式会社 | 2025-05-16 | — | — | CN | disclosed |
| WO-2025099025-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST FILM USING THE SAME | MERCK PATENT GMBH (DE) | 2025-05-15 | — | — | WO | disclosed |
| US-20250147415-A1 | RESIST COMPOSITION AND METHOD OF FORMING PATTERNS USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-05-08 | — | — | US | disclosed |
| US-20250147419-A1 | RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-05-08 | — | — | US | disclosed |
| CN-119937244-A | Resist composition and pattern forming method using the same | 三星电子株式会社 | 2025-05-06 | — | — | CN | disclosed |
| CN-119937241-A | Resist composition and pattern forming method using the same | 三星电子株式会社 | 2025-05-06 | — | — | CN | disclosed |
| CN-113785243-B | Composition for resist pattern metallization process | 日产化学株式会社 | 2025-05-02 | — | — | CN | disclosed |
| US-20250138424-A1 | PHOTOREACTIVE POLYMER COMPOUND, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN BY USING THE PHOTORESIST COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-05-01 | — | — | US | disclosed |
| US-20250138415-A1 | FILM FORMATION APPARATUS, FILM FORMATION METHOD, IMPRINTING APPARATUS, PLANARIZATION APPARATUS, AND ARTICLE MANUFACTURING METHOD | CANON KABUSHIKI KAISHA (JP) | 2025-05-01 | — | — | US | disclosed |
| EP-4545609-A1 | OIL-BASED INK COMPOSITION FOR BALLPOINT PEN | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2025-04-30 | — | — | EP | disclosed |
| US-20250130496-A1 | POSITIVE TYPE LIFT-OFF RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST PATTERN USING THE SAME | MERCK PATENT GMBH (DE) | 2025-04-24 | — | — | US | disclosed |
| US-20250123564-A1 | RESIST COMPOSITION AND METHOD OF FORMING PATTERN BY USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-04-17 | — | — | US | disclosed |
| US-20250123563-A1 | POLYMER, RESIST COMPOSITION COMPRISING THE SAME AND METHOD OF FORMING PATTERN USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-04-17 | — | — | US | disclosed |
| EP-4538019-A1 | CURABLE COMPOSITION, METHOD FOR FORMING INVERTED PATTERN, METHOD FOR FORMING FILM, AND METHOD FOR PRODUCING ARTICLE | CANON KABUSHIKI KAISHA (JP) | 2025-04-16 | — | — | EP | disclosed |
| US-12275854-B2 | Curable composition, film forming method and article manufacturing method | CANON KABUSHIKI KAISHA (JP) | 2025-04-15 | — | — | US | disclosed |
| CN-119823306-A | Polymer, resist composition including the same, and method of forming pattern using the same | 三星电子株式会社 | 2025-04-15 | — | — | CN | disclosed |
| US-20250116928-A1 | SUBSTRATE COATING RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST PATTERN | MERCK PATENT GMBH (DE) | 2025-04-10 | — | — | US | disclosed |
| CN-119768737-A | Developer-resistant resist underlayer film composition and method for producing resist pattern | 默克专利有限公司 | 2025-04-04 | — | — | CN | disclosed |
| CN-119768742-A | Composition for forming silicon-containing resist underlayer film | 日产化学株式会社 | 2025-04-04 | — | — | CN | disclosed |
| US-20250110402-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING UNSATURATED BOND AND CYCLIC STRUCTURE | NISSAN CHEMICAL CORPORATION (JP) | 2025-04-03 | — | — | US | disclosed |
| EP-4530324-A1 | WATER-BASED INK COMPOSITION FOR WRITING INSTRUMENTS | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2025-04-02 | — | — | EP | disclosed |
| US-20250102906-A1 | ORGANOMETALLIC COMPOUND, RESIST COMPOSITION INCLUDING THE SAME AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-03-27 | — | — | US | disclosed |
| US-20250102917-A1 | METHOD FOR MANUFACTURING CURED FILM AND USE OF THE SAME | MERCK PATENT GMBH (DE) | 2025-03-27 | — | — | US | disclosed |
| EP-4526732-A1 | SUBSTRATE COATING RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST PATTERN | Merck Patent GmbH (DE) | 2025-03-26 | — | — | EP | disclosed |
| CN-119684351-A | Organometallic compound, resist composition comprising the same, and pattern forming method using the same | 三星电子株式会社 | 2025-03-25 | — | — | CN | disclosed |
| US-12248249-B2 | Resist material and pattern forming method | Oji Holdings Corporation (JP) | 2025-03-11 | — | — | US | disclosed |
| US-12248251-B2 | Silicon-containing resist underlayer film-forming composition including organic group having ammonium group | NISSAN CHEMICAL CORPORATION (JP) | 2025-03-11 | — | — | US | disclosed |
| WO-2025047871-A1 | UNDERLAYER FILM MATERIAL FOR SELF-ASSEMBLED MATERIALS | 日産化学株式会社 | 2025-03-06 | — | — | WO | disclosed |
| US-12242195-B2 | Method for manufacturing cured film and use of the same | MERCK PATENT GMBH (DE) | 2025-03-04 | — | — | US | disclosed |
| CN-119563142-A | Composition for forming silicon-containing resist underlayer film containing multifunctional sulfonic acid | 日产化学株式会社 | 2025-03-04 | — | — | CN | disclosed |
| WO-2025041813-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING UNDERLAYER FILM FOR INDUCED SELF-ASSEMBLY | 日産化学株式会社 | 2025-02-27 | — | — | WO | disclosed |
| CN-119487138-A | Oily ink composition for ballpoint pen | 三菱铅笔株式会社 | 2025-02-18 | — | — | CN | disclosed |
| CN-119487453-A | Method for manufacturing laminate and method for manufacturing semiconductor element | 日产化学株式会社 | 2025-02-18 | — | — | CN | disclosed |
| US-12227621-B2 | Film-forming composition | NISSAN CHEMICAL CORPORATION (JP) | 2025-02-18 | — | — | US | disclosed |
| CN-119431638-A | Polymer, composition comprising the same, and method of forming pattern using the composition | 三星电子株式会社 | 2025-02-14 | — | — | CN | disclosed |
| US-20250044695-A1 | METHOD FOR USING COMPOSITION COMPRISING ORGANIC ACID COMPOUND, LITHOGRAPHY COMPOSITION COMPRISING ORGANIC ACID COMPOUND, AND METHOD FOR MANUFACTURING RESIST PATTERN | MERCK PATENT GMBH (DE) | 2025-02-06 | — | — | US | disclosed |
| US-20250043046-A1 | POLYMER, COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN USING THE COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-02-06 | — | — | US | disclosed |
| US-20250044697-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CARBONYL STRUCTURE | NISSAN CHEMICAL CORPORATION (JP) | 2025-02-06 | — | — | US | disclosed |
| US-20250044692-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2025-02-06 | — | — | US | disclosed |
| WO-2025022881-A1 | CURABLE COMPOSITION, FILM FORMING METHOD, AND METHOD FOR PRODUCING ARTICLE | キヤノン株式会社 | 2025-01-30 | — | — | WO | disclosed |
| WO-2025017121-A2 | COMPOUNDS, COMPOSITIONS CONTAINING COMPOUNDS, AND METHODS OF MANUFACTURING RESIST MEMBRANES | MERCK PATENT GMBH (DE) | 2025-01-23 | — | — | WO | disclosed |
| EP-4494769-A1 | OIL-BASED INK COMPOSITION FOR WRITING UTENSILS | Mitsubishi Pencil Company, Limited (JP) | 2025-01-22 | — | — | EP | disclosed |
| CN-119343746-A | Curable composition, reverse pattern forming method, film forming method, and article manufacturing method | 佳能株式会社 | 2025-01-21 | — | — | CN | disclosed |
| US-20250021004-A1 | ION IMPLANTATION THICK FILM RESIST COMPOSITION, A METHOD FOR MANUFACTURING A PROCESSED SUBSTRATE USING THE SAME, AND A METHOD FOR MANUFACTURING A DEVICE USING THE SAME | MERCK PATENT GMBH (DE) | 2025-01-16 | — | — | US | disclosed |
| US-20250021003-A1 | POLYMER, MONOMER, RESIST COMPOSITION COMPRISING THE SAME AND METHOD OF FORMING PATTERN USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-01-16 | — | — | US | disclosed |
| US-20250014899-A1 | METHOD FOR REMOVING UPPER PART OF SACRIFICIAL LAYER, AND SACRIFICIAL SOLUTION AND ACIDIC AQUEOUS SOLUTION USED THEREFOR | MERCK PATENT GMBH (DE) | 2025-01-09 | — | — | US | disclosed |
| US-20250004376-A1 | RESIST MATERIAL AND PATTERN FORMING METHOD | Oji Holdings Corporation (JP) | 2025-01-02 | — | — | US | disclosed |
| US-20250004370-A1 | POLYMER, RESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN BY USING THE RESIST COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-01-02 | — | — | US | disclosed |
| EP-4485075-A1 | POLYMER, RESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN BY USING THE RESIST COMPOSITION | Samsung Electronics Co., Ltd. (KR) | 2025-01-01 | — | — | EP | disclosed |
| CN-119219812-A | Polymer, resist composition including the same, and method of forming pattern by using the resist composition | 三星电子株式会社 | 2024-12-31 | — | — | CN | disclosed |
| CN-119213363-A | Substrate-coating resist composition and method for producing resist pattern | 默克专利有限公司 | 2024-12-27 | — | — | CN | disclosed |
| EP-4479801-A1 | POSITIVE TYPE LIFT-OFF RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST PATTERN USING THE SAME | Merck Patent GmbH (DE) | 2024-12-25 | — | — | EP | disclosed |
| US-20240419073-A1 | ADDITIVE-CONTAINING SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2024-12-19 | — | — | US | disclosed |
| EP-4478398-A1 | FILM FORMATION METHOD AND ARTICLE MANUFACTURING METHOD | CANON KABUSHIKI KAISHA (JP) | 2024-12-18 | — | — | EP | disclosed |
| WO-2024253181-A1 | UNDERLAYER FILM MATERIAL FOR SELF-ASSEMBLED MATERIAL | 日産化学株式会社 | 2024-12-12 | — | — | WO | disclosed |
| US-20240398753-A1 | METHOD FOR PRODUCING LIQUID MIXTURE, LIQUID MIXTURE, AND SOLID COMPOSITION | TOWA PHARMACEUTICAL CO., LTD. (JP) | 2024-12-05 | — | — | US | disclosed |
| CN-112947000-B | Composition for forming silicon-containing EUV resist underlayer film containing sulfonate | 日产化学工业株式会社 | 2024-11-29 | — | — | CN | disclosed |
| US-20240393693-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION, LAMINATE USING THE COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT | NISSAN CHEMICAL CORPORATION (JP) | 2024-11-28 | — | — | US | disclosed |
| US-20240385521-A1 | PRIMER FOR SEMICONDUCTOR SUBSTRATE AND METHOD FOR FORMING A PATTERN | NISSAN CHEMICAL CORPORATION (JP) | 2024-11-21 | — | — | US | disclosed |
| WO-2024237188-A1 | MULTILAYER BODY, METHOD FOR PRODUCING MULTILAYER BODY, AND PHOTOSENSITIVE SURFACE MODIFIER | 日産化学株式会社 | 2024-11-21 | — | — | WO | disclosed |
| CN-118955829-A | Ethynyl-derived complexes, compositions comprising the same, methods of making coatings therefrom, and methods of making devices comprising the coatings | 默克专利有限公司 | 2024-11-15 | — | — | CN | disclosed |
| US-20240377745-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION AND SILICON-CONTAINING RESIST UNDERLAYER FILM | NISSAN CHEMICAL CORPORATION (JP) | 2024-11-14 | — | — | US | disclosed |
| CN-118922783-A | Brush material for self-assembled films | 日产化学株式会社 | 2024-11-08 | — | — | CN | disclosed |
| WO-2024225055-A1 | CARBON FILLER DISPERSANT, COMPOSITION CONTAINING CARBON FILLER, AND NONAQUEOUS-ELECTROLYTE SECONDARY BATTERY | DIC株式会社 | 2024-10-31 | — | — | WO | disclosed |
| WO-2024223449-A1 | RESIST PATTERN FILLING LIQUID AND METHOD FOR MANUFACTURING RESIST PATTERN USING THE SAME | MERCK PATENT GMBH (DE) | 2024-10-31 | — | — | WO | disclosed |
| CN-113454131-B | Polymer, semiconductor composition containing polymer, and method for producing film using semiconductor composition | 默克专利有限公司 | 2024-10-29 | — | — | CN | disclosed |
| CN-118829945-A | Ion-implanted thick film resist composition, method for manufacturing processed substrate using the same, and method for manufacturing device using the same | 默克专利有限公司 | 2024-10-22 | — | — | CN | disclosed |
| WO-2024212883-A1 | PREPARATION METHOD FOR ARYL METHOXY ISOINDOLINE DERIVATIVE | 上海科胜药物研发有限公司 | 2024-10-17 | — | — | WO | disclosed |
| CN-118786190-A | Oily ink composition for writing instrument | 三菱铅笔株式会社 | 2024-10-15 | — | — | CN | disclosed |
| US-20240337928-A1 | ORGANIC SALT, PHOTORESIST COMPOSITION INCLUDING THE SAME AND METHOD OF FORMING PATTERN BY USING THE PHOTORESIST PATTERN | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-10-10 | — | — | US | disclosed |
| US-20240326091-A1 | FILM FORMING METHOD AND ARTICLE MANUFACTURING METHOD | CANON KABUSHIKI KAISHA (JP) | 2024-10-03 | — | — | US | disclosed |
| US-20240327338-A1 | ORGANIC SALT, RESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-10-03 | — | — | US | disclosed |
| US-20240317672-A1 | POLYCARBOXYLATE COMPOUND, RESIST COMPOSITION COMPRISING THE SAME AND METHOD OF FORMING PATTERN USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-09-26 | — | — | US | disclosed |
| WO-2024195705-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM FOR i-RAY LITHOGRAPHY | 日産化学株式会社 | 2024-09-26 | — | — | WO | disclosed |
| US-20240319594-A1 | RESIST COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-09-26 | — | — | US | disclosed |
| US-20240319592-A1 | RESIST COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-09-26 | — | — | US | disclosed |
| US-20240319595-A1 | PHOTOREACTIVE POLYMER COMPOUND, PHOTORESIST COMPOSITION COMPRISING THE SAME, AND METHOD OF FORMING PATTERN BY USING THE PHOTORESIST COMPOUND | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-09-26 | — | — | US | disclosed |
| CN-118689036-A | Resist composition and method of forming pattern using the same | 三星电子株式会社 | 2024-09-24 | — | — | CN | disclosed |
| CN-111744462-B | Metal adsorbent for removing metal impurities from epoxy resin and metal removing method | 日产化学株式会社 | 2024-09-24 | — | — | CN | disclosed |
| CN-118696274-A | Positive resist stripping composition and method for manufacturing resist pattern using the same | 默克专利有限公司 | 2024-09-24 | — | — | CN | disclosed |
| CN-118684603-A | Organic salt, photoresist composition including the same, and method of forming pattern by using the photoresist composition | 三星电子株式会社 | 2024-09-24 | — | — | CN | disclosed |
| WO-2024190608-A1 | OIL-IN-WATER INK COMPOSITION FOR WRITING UTENSILS | 三菱鉛筆株式会社 | 2024-09-19 | — | — | WO | disclosed |
| CN-118647935-A | Composition for forming silicon-containing resist underlayer film having unsaturated bond and ring structure | 日产化学株式会社 | 2024-09-13 | — | — | CN | disclosed |
| CN-118648087-A | Film forming method and article manufacturing method | 佳能株式会社 | 2024-09-13 | — | — | CN | disclosed |
| US-20240302744-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING UNDERLAYER FILM FOR INDUCED SELF-ORGANIZATION | NISSAN CHEMICAL CORPORATION (JP) | 2024-09-12 | — | — | US | disclosed |
| WO-2024185665-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2024-09-12 | — | — | WO | disclosed |
| US-12084592-B2 | Coating composition for pattern inversion | NISSAN CHEMICAL CORPORATION (JP) | 2024-09-10 | — | — | US | disclosed |
| CN-111512228-B | Negative type lift-off resist composition comprising alkali-soluble resin and crosslinking agent and method for manufacturing metal film pattern on substrate | 默克专利有限公司 | 2024-09-06 | — | — | CN | disclosed |
| WO-2024181394-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CARBON-CARBON DOUBLE BOND | 日産化学株式会社 | 2024-09-06 | — | — | WO | disclosed |
| US-20240295815-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2024-09-05 | — | — | US | disclosed |
| US-20240295819-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | NISSAN CHEMICAL CORPORATION (JP) | 2024-09-05 | — | — | US | disclosed |
| CN-118541645-A | Composition for forming silicon-containing resist underlayer film and silicon-containing resist underlayer film | 日产化学株式会社 | 2024-08-23 | — | — | CN | disclosed |
| CN-111492310-B | Ethynyl-derived complexes, compositions comprising the same, methods of making coatings therefrom, and methods of making devices comprising the coatings | 默克专利有限公司 | 2024-08-23 | — | — | CN | disclosed |
| EP-4417220-A1 | METHOD FOR PRODUCING LIQUID MIXTURE, LIQUID MIXTURE, AND SOLID COMPOSITION | TOWA PHARMACEUTICAL CO., LTD. (JP) | 2024-08-21 | — | — | EP | disclosed |
| US-12054622-B2 | Oil-based ink composition for writing utensils, writing utensil using same, and airbrush unit using same | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2024-08-06 | — | — | US | disclosed |
| US-20240255847-A1 | ORGANIC SALT, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN BY USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-08-01 | — | — | US | disclosed |
| CN-115362216-B | Composition for forming film | 日产化学株式会社 | 2024-07-19 | — | — | CN | disclosed |
| US-20240239820-A1 | ORGANOMETALLIC COMPOUND, RESIST COMPOSITION INCLUDING THE SAME AND PATTERN FORMING METHOD USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-07-18 | — | — | US | disclosed |
| US-20240231225-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-07-11 | — | — | US | disclosed |
| US-20240231228-A1 | RESIST COMPOSITION AND METHOD OF FORMING PATTERN BY USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-07-11 | — | — | US | disclosed |
| US-20240231230-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | NISSAN CHEMICAL CORPORATION (JP) | 2024-07-11 | — | — | US | disclosed |
| US-20240231223-A1 | RESIST COMPOSITION AND METHOD OF FORMING PATTERN BY USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-07-11 | — | — | US | disclosed |
| US-12030974-B2 | Composition for forming block copolymer layer for formation of microphase-separated pattern | NISSAN CHEMICAL CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| EP-4394507-A1 | RESIST COMPOSITION AND METHOD OF FORMING PATTERN BY USING THE SAME | Samsung Electronics Co., Ltd. (KR) | 2024-07-03 | — | — | EP | disclosed |
| EP-4394506-A1 | RESIST COMPOSITION AND METHOD OF FORMING PATTERN BY USING THE SAME | Samsung Electronics Co., Ltd. (KR) | 2024-07-03 | — | — | EP | disclosed |
| EP-4394508-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | Samsung Electronics Co., Ltd. (KR) | 2024-07-03 | — | — | EP | disclosed |
| EP-4393925-A1 | ORGANOMETALLIC COMPOUND, RESIST COMPOSITION INCLUDING THE SAME AND PATTERN FORMING METHOD USING THE SAME | Samsung Electronics Co., Ltd. (KR) | 2024-07-03 | — | — | EP | disclosed |
| CN-118259544-A | Resist composition and method of forming pattern by using the same | 三星电子株式会社 | 2024-06-28 | — | — | CN | disclosed |
| CN-118259546-A | Resist composition and method of forming pattern by using the same | 三星电子株式会社 | 2024-06-28 | — | — | CN | disclosed |
| CN-118255802-A | Organometallic compound, resist composition comprising the same, and pattern forming method using the same | 三星电子株式会社 | 2024-06-28 | — | — | CN | disclosed |
| CN-118259545-A | Resist composition and pattern forming method using the same | 三星电子株式会社 | 2024-06-28 | — | — | CN | disclosed |
| US-20240213072-A1 | LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING PROCESSED SEMICONDUCTOR SUBSTRATE | NISSAN CHEMICAL CORPORATION (JP) | 2024-06-27 | — | — | US | disclosed |
| US-20240201588-A1 | ORGANIC SALT, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND PATTERN FORMATION METHOD USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-06-20 | — | — | US | disclosed |
| US-20240199540-A1 | CARBOXYLATE SALT, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN USING THE PHOTORESIST COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-06-20 | — | — | US | disclosed |
| US-20240199924-A1 | LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING PROCESSED SEMICONDUCTOR SUBSTRATE | NISSAN CHEMICAL CORPORATION (JP) | 2024-06-20 | — | — | US | disclosed |
| US-20240201593-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | NISSAN CHEMICAL CORPORATION (JP) | 2024-06-20 | — | — | US | disclosed |
| US-20240191088-A1 | CURABLE COMPOSITION, FILM FORMING METHOD AND ARTICLE MANUFACTURING METHOD | CANON KABUSHIKI KAISHA (JP) | 2024-06-13 | — | — | US | disclosed |
| CN-118159910-A | Additive-containing silicon-containing resist underlayer film forming composition | 日产化学株式会社 | 2024-06-07 | — | — | CN | disclosed |
| WO-2024117111-A1 | OIL-IN-WATER INK COMPOSITION FOR WRITING UTENSILS | 三菱鉛筆株式会社 | 2024-06-06 | — | — | WO | disclosed |
| WO-2024116787-A1 | CURABLE COMPOSITION, FILM FORMING METHOD, AND ARTICLE MANUFACTURING METHOD | キヤノン株式会社 | 2024-06-06 | — | — | WO | disclosed |
| WO-2024111521-A1 | CURABLE COMPOSITION, FILM FORMING METHOD AND ARTICLE MANUFACTURING METHOD | CANON KABUSHIKI KAISHA (JP) | 2024-05-30 | — | — | WO | disclosed |
| WO-2024106492-A1 | UNDERLAYER FILM MATERIAL FOR SELF-ASSEMBLED FILM | 日産化学株式会社 | 2024-05-23 | — | — | WO | disclosed |
| WO-2024106268-A1 | CURABLE COMPOSITION, FILM FORMATION METHOD, PATTERN FORMATION METHOD, AND ARTICLE PRODUCTION METHOD | キヤノン株式会社 | 2024-05-23 | — | — | WO | disclosed |
| US-20240166901-A1 | OILY INK COMPOSITION FOR WRITING UTENSIL | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2024-05-23 | — | — | US | disclosed |
| CN-117940850-A | Composition for forming silicon-containing resist underlayer film, laminate using same, and method for producing semiconductor element | 日产化学株式会社 | 2024-04-26 | — | — | CN | disclosed |
| US-11966164-B2 | Semiconductor device production method employing silicon-containing resist underlayer film-forming composition including organic group having ammonium group | NISSAN CHEMICAL CORPORATION (JP) | 2024-04-23 | — | — | US | disclosed |
| US-20240124635-A1 | POLYMER, RESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN USING THE RESIST COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-04-18 | — | — | US | disclosed |
| EP-4354488-A1 | CURABLE COMPOSITION, FILM FORMATION METHOD, AND ARTICLE MANUFACTURING METHOD | CANON KABUSHIKI KAISHA (JP) | 2024-04-17 | — | — | EP | disclosed |
| EP-4348352-A1 | METHOD FOR USING COMPOSITION COMPRISING ORGANIC ACID COMPOUND, LITHOGRAPHY COMPOSITION COMPRISING ORGANIC ACID COMPOUND, AND METHOD FOR MANUFACTURING RESIST PATTERN | Merck Patent GmbH (DE) | 2024-04-10 | — | — | EP | disclosed |
| CN-117836971-A | Carbon nanotube dispersion, conductive paste using same, electrode paste for secondary battery, electrode for secondary battery, and secondary battery | 三菱铅笔株式会社 | 2024-04-05 | — | — | CN | disclosed |
| CN-117836972-A | Carbon nanotube dispersion, conductive paste using same, electrode paste for secondary battery, electrode for secondary battery, and secondary battery | 三菱铅笔株式会社 | 2024-04-05 | — | — | CN | disclosed |
| WO-2024070535-A1 | RESIST PATTERN FORMATION METHOD | JSR株式会社 | 2024-04-04 | — | — | WO | disclosed |
| WO-2024063044-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2024-03-28 | — | — | WO | disclosed |
| US-20240101842-A1 | CURABLE COMPOSITION, FILM FORMING METHOD AND ARTICLE MANUFACTURING METHOD | CANON KABUSHIKI KAISHA (JP) | 2024-03-28 | — | — | US | disclosed |
| US-20240094633-A1 | CARBOXYLATE SALT, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN BY USING THE PHOTORESIST COMPOSITION | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2024-03-21 | — | — | US | disclosed |
| CN-117716295-A | Composition for forming silicon-containing resist underlayer film and silicon-containing resist underlayer film | 日产化学株式会社 | 2024-03-15 | — | — | CN | disclosed |
| EP-4332083-A1 | CARBOXYLATE SALT, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN BY USING THE PHOTORESIST COMPOSITION | Samsung Electronics Co., Ltd. (KR) | 2024-03-06 | — | — | EP | disclosed |
| CN-117624002-A | Carboxylate, photoresist composition including the same, and method of forming pattern by using the photoresist composition | 三星电子株式会社 | 2024-03-01 | — | — | CN | disclosed |
| US-20240069441-A1 | COMPOSITION FOR RESIST UNDERLYING FILM FORMATION | NISSAN CHEMICAL CORPORATION (JP) | 2024-02-29 | — | — | US | disclosed |
| US-11914296-B2 | Ethynyl derived composite, a composition comprising thereof, a method for manufacturing a coating by it, and a method for manufacturing a device comprising the coating | MERCK PATENT GMBH (DE) | 2024-02-27 | — | — | US | disclosed |
| US-20240043592-A1 | POLYMER, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN USING THE PHOTORESIST COMPOSITION | SAMSUNG ELECTRONICS CO., LTD., (KR) | 2024-02-08 | — | — | US | disclosed |
| CN-117501179-A | Method of using composition containing organic acid compound, lithographic composition containing organic acid compound, and method of manufacturing resist pattern | 默克专利有限公司 | 2024-02-02 | — | — | CN | disclosed |
| US-11884839-B2 | Acetal-protected silanol group-containing polysiloxane composition | NISSAN CHEMICAL CORPORATION (JP) | 2024-01-30 | — | — | US | disclosed |
| CN-117460995-A | Composition for forming underlayer film of silicon-containing resist | 日产化学株式会社 | 2024-01-26 | — | — | CN | disclosed |
| CN-117461112-A | Curable composition, film forming method, and method for producing product | 佳能株式会社 | 2024-01-26 | — | — | CN | disclosed |
| WO-2024019064-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYFUNCTIONAL SULFONIC ACID | 日産化学株式会社 | 2024-01-25 | — | — | WO | disclosed |
| EP-3558917-B1 | NOVEL COMPOUND, SEMICONDUCTOR MATERIAL, AND METHODS FOR MANUFACTURING COATING AND SEMICONDUCTOR USING THE SAME | MERCK PATENT GMBH (DE) | 2024-01-24 | — | — | EP | disclosed |
| EP-4310155-A1 | OILY INK COMPOSITION FOR WRITING UTENSIL | Mitsubishi Pencil Company, Limited (JP) | 2024-01-24 | — | — | EP | disclosed |
| EP-4309893-A1 | LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE | Nissan Chemical Corporation (JP) | 2024-01-24 | — | — | EP | disclosed |
| EP-4310157-A1 | LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR MANUFACTURING MACHINED SEMICONDUCTOR SUBSTRATE | Nissan Chemical Corporation (JP) | 2024-01-24 | — | — | EP | disclosed |
| CN-117430743-A | Polymer, photoresist composition including the same, and method of forming pattern using the photoresist composition | 三星电子株式会社 | 2024-01-23 | — | — | CN | disclosed |
| CN-117396811-A | Composition for forming underlayer film of silicon-containing resist | 日产化学株式会社 | 2024-01-12 | — | — | CN | disclosed |
| CN-117396810-A | Composition for forming silicon-containing resist underlayer film | 日产化学株式会社 | 2024-01-12 | — | — | CN | disclosed |
| WO-2024009993-A1 | METHOD OF MANUFACTURING LAMINATE AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT | 日産化学株式会社 | 2024-01-11 | — | — | WO | disclosed |
| WO-2024004323-A1 | CURABLE COMPOSITION | 日産化学株式会社 | 2024-01-04 | — | — | WO | disclosed |
| WO-2024004815-A1 | OIL-BASED INK COMPOSITION FOR BALLPOINT PEN | 三菱鉛筆株式会社 | 2024-01-04 | — | — | WO | disclosed |
| WO-2023243484-A1 | CURABLE COMPOSITION, METHOD FOR FORMING INVERTED PATTERN, METHOD FOR FORMING FILM, AND METHOD FOR PRODUCING ARTICLE | キヤノン株式会社 | 2023-12-21 | — | — | WO | disclosed |
| CN-117255971-A | Composition for forming silicon-containing resist underlayer film | 日产化学株式会社 | 2023-12-19 | — | — | CN | disclosed |
| CN-107615168-B | Radiation-sensitive composition | 日产化学工业株式会社 | 2023-12-19 | — | — | CN | disclosed |
| CN-117157738-A | Laminate, stripper composition, and method for producing processed semiconductor substrate | 日产化学株式会社 | 2023-12-01 | — | — | CN | disclosed |
| CN-117157739-A | Laminate, stripper composition, and method for producing processed semiconductor substrate | 日产化学株式会社 | 2023-12-01 | — | — | CN | disclosed |
| CN-117157364-A | Oily ink composition for writing instrument | 三菱铅笔株式会社 | 2023-12-01 | — | — | CN | disclosed |
| WO-2023222740-A1 | SUBSTRATE COATING RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST PATTERN | MERCK PATENT GMBH (DE) | 2023-11-23 | — | — | WO | disclosed |
| US-11822250-B2 | Solution, method of forming resist pattern, and semiconductor device manufacturing method | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-11-21 | — | — | US | disclosed |
| CN-110809739-B | Composition for forming silicon-containing resist underlayer film soluble in alkaline developer | 日产化学株式会社 | 2023-11-21 | — | — | CN | disclosed |
| CN-117083570-A | Composition for forming silicon-containing resist underlayer film | 日产化学株式会社 | 2023-11-17 | — | — | CN | disclosed |
| US-11815815-B2 | Composition for forming silicon-containing resist underlayer film removable by wet process | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2023-11-14 | — | — | US | disclosed |
| CN-117063129-A | Composition for forming silicon-containing underlayer film for directional self-assembly | 日产化学株式会社 | 2023-11-14 | — | — | CN | disclosed |
| CN-117008420-A | Radiation-sensitive composition | 日产化学工业株式会社 | 2023-11-07 | — | — | CN | disclosed |
| EP-4268267-A1 | METHOD FOR REMOVING UPPER PART OF SACRIFICIAL LAYER, AND SACRIFICIAL SOLUTION AND ACIDIC AQUEOUS SOLUTION USED THEREFOR | Merck Patent GmbH (DE) | 2023-11-01 | — | — | EP | disclosed |
| EP-4270448-A1 | FILM FORMATION METHOD AND ARTICLE MANUFACTURING METHOD | CANON KABUSHIKI KAISHA (JP) | 2023-11-01 | — | — | EP | disclosed |
| CN-111902774-B | Composition for forming silicon-containing resist underlayer film comprising nitric acid and protected phenol group | 日产化学株式会社 | 2023-10-31 | — | — | CN | disclosed |
| US-20230343591-A1 | FILM FORMING METHOD AND ARTICLE MANUFACTURING METHOD | CANON KABUSHIKI KAISHA (JP) | 2023-10-26 | — | — | US | disclosed |
| US-11795404-B2 | Composition for removing sulfur-containing compounds | KURARAY CO., LTD. (JP) | 2023-10-24 | — | — | US | disclosed |
| US-11795336-B2 | Oil-based ink composition for writing implements | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2023-10-24 | — | — | US | disclosed |
| WO-2023190807-A1 | BRUSH MATERIAL FOR SELF-ASSEMBLED FILM | 日産化学株式会社 | 2023-10-05 | — | — | WO | disclosed |
| US-20230314943-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST FILM USING THE SAME | MERCK PATENT GMBH (DE) | 2023-10-05 | — | — | US | disclosed |
| US-20230314937-A1 | METHOD FOR USING COMPOSITION COMPRISING CARBOXYLIC ACID ESTER, LITHOGRAPHY COMPOSITION COMPRISING CARBOXYLIC ACID ESTER, AND METHOD FOR MANUFACTURING RESIST PATTERN | MERCK PATENT GMBH (DE) | 2023-10-05 | — | — | US | disclosed |
| WO-2023176735-A1 | OIL-BASED INK COMPOSITION FOR WRITING UTENSILS | 三菱鉛筆株式会社 | 2023-09-21 | — | — | WO | disclosed |
| EP-3260506-B1 | AQUEOUS INK COMPOSITION FOR WRITING TOOLS | MITSUBISHI PENCIL CO (JP) | 2023-09-20 | — | — | EP | disclosed |
| EP-3632997-B1 | OIL-BASED INK COMPOSITION FOR WRITING INSTRUMENT | MITSUBISHI PENCIL CO (JP) | 2023-09-13 | — | — | EP | disclosed |
| CN-112771091-B | Composition for forming block copolymer layer for forming fine phase separation pattern | 日产化学株式会社 | 2023-09-12 | — | — | CN | disclosed |
| WO-2023165914-A1 | ION IMPLANTATION THICK FILM RESIST COMPOSITION, METHOD FOR MANUFACTURING PROCESSED SUBSTRATE USING THE SAME AND METHOD FOR MANUFACTURING DEVICE USING THE SAME | MERCK PATENT GMBH (DE) | 2023-09-07 | — | — | WO | disclosed |
| WO-2023157943-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION HAVING UNSATURATED BOND AND CYCLIC STRUCTURE | 日産化学株式会社 | 2023-08-24 | — | — | WO | disclosed |
| WO-2023156419-A1 | POSITIVE TYPE LIFT-OFF RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST PATTERN USING THE SAME | MERCK PATENT GMBH (DE) | 2023-08-24 | — | — | WO | disclosed |
| CN-116635210-A | Film forming method and article manufacturing method | 佳能株式会社 | 2023-08-22 | — | — | CN | disclosed |
| CN-116635982-A | Method for removing upper part of sacrificial layer, sacrificial solution and acidic aqueous solution for use in the method | 默克专利有限公司 | 2023-08-22 | — | — | CN | disclosed |
| CN-116547781-A | Composition for forming resist underlayer film | 日产化学株式会社 | 2023-08-04 | — | — | CN | disclosed |
| CN-116547343-A | Composition for forming silicon-containing resist underlayer film | 日产化学株式会社 | 2023-08-04 | — | — | CN | disclosed |
| US-20230236509-A1 | A SPIN COATING COMPOSITION COMPRISING A CARBON MATERIAL, A METAL ORGANIC COMPOUND, AND SOLVENT, AND A MANUFACTURING METHOD OF A METAL OXIDE FILM ABOVE A SUBSTRATE | MERCK PERFORMANCE MATERIALS GERMANY GMBH (DE) | 2023-07-27 | — | — | US | disclosed |
| US-11709425-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-25 | — | — | US | disclosed |
| WO-2023136250-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2023-07-20 | — | — | WO | disclosed |
| EP-3932906-B1 | NOVEL COMPOUND, COMPOSITION CONTAINING SAID COMPOUND, AND CURED OBJECT | ADEKA CORP (JP) | 2023-07-12 | — | — | EP | disclosed |
| EP-4204901-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST FILM USING THE SAME | Merck Patent GmbH (DE) | 2023-07-05 | — | — | EP | disclosed |
| US-20230194989-A1 | ETHYNYL DERIVED COMPOSITE, A COMPOSITION COMPRISING THEREOF, A METHOD FOR MANUFACTURING A COATING BY IT, AND A METHOD FOR MANUFACTURING A DEVICE COMPRISING THE COATING | MERCK PATENT GMBH (DE) | 2023-06-22 | — | — | US | disclosed |
| EP-4194949-A1 | PHOTOACID GENERATOR, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING A PATTERN USING THE PHOTOACID GENERATOR | Samsung Electronics Co., Ltd. (KR) | 2023-06-14 | — | — | EP | disclosed |
| US-11674053-B2 | Composition for forming underlayer film of self-assembled film including aliphatic polycyclic structure | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2023-06-13 | — | — | US | disclosed |
| US-20230176481-A1 | FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2023-06-08 | — | — | US | disclosed |
| EP-4189486-A1 | METHOD FOR USING COMPOSITION COMPRISING CARBOXYLIC ACID ESTER, LITHOGRAPHY COMPOSITION COMPRISING CARBOXYLIC ACID ESTER, AND METHOD FOR MANUFACTURING RESIST PATTERN | Merck Patent GmbH (DE) | 2023-06-07 | — | — | EP | disclosed |
| US-11667609-B2 | Compound, composition containing said compound, self-healing material, surface coating agent, paint, adhesive, material for battery and cured product | ADEKA CORPORATION (JP) | 2023-06-06 | — | — | US | disclosed |
| CN-108885997-B | Planarization method for semiconductor substrate using silicon-containing composition | 日产化学株式会社 | 2023-06-02 | — | — | CN | disclosed |
| US-20230168582-A1 | COMPOSITION FOR FORMING RESIST UNDERLYING FILM | NISSAN CHEMICAL CORPORATION (JP) | 2023-06-01 | — | — | US | disclosed |
| CN-116165842-A | Photoacid generator, photoresist composition comprising the same, and method of forming pattern using the photoacid generator | 三星电子株式会社 | 2023-05-26 | — | — | CN | disclosed |
| US-20230161245-A1 | PHOTOACID GENERATOR, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN USING THE PHOTOACID GENERATOR | SAMSUNG ELECTRONICS CO LTD (KR) | 2023-05-25 | — | — | US | disclosed |
| CN-111386493-B | Liquid crystal aligning agent, liquid crystal alignment film, method for producing liquid crystal alignment film, and liquid crystal display element | 日产化学株式会社 | 2023-05-23 | — | — | CN | disclosed |
| US-20230152699-A1 | FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2023-05-18 | — | — | US | disclosed |
| US-20230152700-A1 | FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2023-05-18 | — | — | US | disclosed |
| US-11649363-B2 | Oil-based ink composition for writing instrument | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2023-05-16 | — | — | US | disclosed |
| CN-116113885-A | Method for using composition containing carboxylic acid ester, lithographic composition containing carboxylic acid ester, and method for producing resist pattern | 默克专利有限公司 | 2023-05-12 | — | — | CN | disclosed |
| WO-2023074777-A1 | ADDITIVE-CONTAINING COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2023-05-04 | — | — | WO | disclosed |
| CN-113544120-B | Novel compound, composition containing same, self-repairing material, surface coating agent, paint, adhesive, battery material, and cured product | 株式会社ADEKA | 2023-05-02 | — | — | CN | disclosed |
| CN-110088072-B | Novel compound, semiconductor material, film using same, and method for producing semiconductor | 默克专利有限公司 | 2023-05-02 | — | — | CN | disclosed |
| US-20230125270-A1 | RADIATION SENSITIVE COMPOSITION | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2023-04-27 | — | — | US | disclosed |
| US-20230119980-A1 | A METHOD OF MANUFACTURING SEGREGATED LAYERS ABOVE A SUBSTRATE, AND A METHOD FOR MANUFACTURING A DEVICE | MERCK PATENT GMBH (DE) | 2023-04-20 | — | — | US | disclosed |
| WO-2023063296-A1 | METHOD FOR PRODUCING LIQUID MIXTURE, LIQUID MIXTURE, AND SOLID COMPOSITION | 東和薬品株式会社 | 2023-04-20 | — | — | WO | disclosed |
| CN-115989458-A | Chemically amplified resist composition and method for producing resist film using the same | 默克专利有限公司 | 2023-04-18 | — | — | CN | disclosed |
| US-20230112897-A1 | COMPOSITION FOR FORMING PHOTOCURABLE SILICON-CONTAINING COATING FILM | NISSAN CHEMICAL CORPORATION (JP) | 2023-04-13 | — | — | US | disclosed |
| WO-2023054693-A1 | OIL-BASED INK COMPOSITION FOR WRITING UTENSILS | 三菱鉛筆株式会社 | 2023-04-06 | — | — | WO | disclosed |
| US-11609498-B2 | Ethynyl derived composite, a composition comprising thereof, a method for manufacturing a coating by it, and a method for manufacturing a device comprising the coating | MERCK PATENT GMBH (DE) | 2023-03-21 | — | — | US | disclosed |
| US-11609499-B2 | Silicon-containing coating agent for pattern reversal | NISSAN CHEMICAL CORPORATION (JP) | 2023-03-21 | — | — | US | disclosed |
| WO-2023037979-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, MULTILAYER BODY USING SAID COMPOSITION, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT | 日産化学株式会社 | 2023-03-16 | — | — | WO | disclosed |
| CN-113227281-B | Film-forming composition | 日产化学株式会社 | 2023-03-10 | — | — | CN | disclosed |
| US-20230072944-A1 | COLORING TABLET AND WATER-BASED INK COMPOSITION FOR WRITING INSTRUMENT USING THE SAME | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2023-03-09 | — | — | US | disclosed |
| EP-4141076-A2 | COLORING TABLET AND WATER-BASED INK COMPOSITION FOR WRITING INSTRUMENT USING THE SAME | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2023-03-01 | — | — | EP | disclosed |
| WO-2023022073-A1 | CARBON NANOTUBE DISPERSION, CONDUCTIVE PASTE USING SAME, ELECTRODE PASTE FOR SECONDARY BATTERY, ELECTRODE FOR SECONDARY BATTERY, AND SECONDARY BATTERY | 三菱鉛筆株式会社 | 2023-02-23 | — | — | WO | disclosed |
| WO-2023022064-A1 | CARBON NANOTUBE DISPERSION, CONDUCTIVE PASTE USING SAME, SECONDARY BATTERY ELECTRODE PASTE, SECONDARY BATTERY ELECTRODE, AND SECONDARY BATTERY | 三菱鉛筆株式会社 | 2023-02-23 | — | — | WO | disclosed |
| EP-4136508-A1 | A SPIN COATING COMPOSITION COMPRISING A CARBON MATERIAL, A METAL ORGANIC COMPOUND, AND SOLVENT, AND A MANUFACTURING METHOD OF A METAL OXIDE FILM ABOVE A SUBSTRATE | Merck Patent GmbH (DE) | 2023-02-22 | — | — | EP | disclosed |
| WO-2023008507-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2023-02-02 | — | — | WO | disclosed |
| US-20230022002-A1 | IONIC SALT, RADIATION-SENSITIVE RESIST COMPOSITION COMPRISING THE SAME, AND METHOD OF FORMING PATTERN USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-01-26 | — | — | US | disclosed |
| US-11561472-B2 | Radiation sensitive composition | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2023-01-24 | — | — | US | disclosed |
| US-11561468-B2 | Pattern forming method | CANON KABUSHIKI KAISHA (JP) | 2023-01-24 | — | — | US | disclosed |
| CN-110337608-B | Liquid crystal aligning agent, liquid crystal alignment film, liquid crystal element and polyorganosiloxane | JSR株式会社 | 2023-01-17 | — | — | CN | disclosed |
| CN-110536937-B | Oil-based ink composition for writing instrument | 三菱铅笔株式会社 | 2022-12-30 | — | — | CN | disclosed |
| CN-113056530-B | Oil-based ink composition for writing instrument, writing instrument using same, and spray gun unit using same | 三菱铅笔株式会社 | 2022-12-27 | — | — | CN | disclosed |
| CN-115485624-A | Composition for forming resist underlayer film | 日产化学株式会社 | 2022-12-16 | — | — | CN | disclosed |
| WO-2022260154-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2022-12-15 | — | — | WO | disclosed |
| WO-2022253787-A1 | METHOD FOR USING COMPOSITION COMPRISING ORGANIC ACID COMPOUND, LITHOGRAPHY COMPOSITION COMPRISING ORGANIC ACID COMPOUND, AND METHOD FOR MANUFACTURING RESIST PATTERN | MERCK PATENT GMBH (DE) | 2022-12-08 | — | — | WO | disclosed |
| CN-115427890-A | Spin-on composition comprising carbon material, metal organic compound and solvent and method for producing metal oxide film over substrate | 默克专利有限公司 | 2022-12-02 | — | — | CN | disclosed |
| CN-115398342-A | Film-forming composition | 日产化学株式会社 | 2022-11-25 | — | — | CN | disclosed |
| US-20220373886-A1 | RESIST MATERIAL AND PATTERN FORMING METHOD | Oji Holdings Corporation (JP) | 2022-11-24 | — | — | US | disclosed |
| US-20220373888-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION INCLUDING ORGANIC GROUP HAVING AMMONIUM GROUP | NISSAN CHEMICAL CORPORATION (JP) | 2022-11-24 | — | — | US | disclosed |
| CN-115362413-A | Film-forming composition | 日产化学株式会社 | 2022-11-18 | — | — | CN | disclosed |
| CN-115362216-A | Film-forming composition | 日产化学株式会社 | 2022-11-18 | — | — | CN | disclosed |
| US-20220365448-A1 | PATTERN FORMING METHOD, RESIST MATERIAL, AND PATTERN FORMING APPARATUS | Oji Holdings Corporation (JP) | 2022-11-17 | — | — | US | disclosed |
| WO-2022230940-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2022-11-03 | — | — | WO | disclosed |
| CN-115280240-A | Method for producing segregation phase over substrate and method for producing device | 默克专利有限公司 | 2022-11-01 | — | — | CN | disclosed |
| US-11488824-B2 | Method for manufacturing semiconductor device using silicon-containing resist underlayer film forming composition for solvent development | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2022-11-01 | — | — | US | disclosed |
| WO-2022224772-A1 | METHOD FOR PRODUCING TITANIUM OXIDE PARTICLES USING AMPHOTERIC SUBSTANCE | 日産化学株式会社 | 2022-10-27 | — | — | WO | disclosed |
| WO-2022224770-A1 | MODIFIED METAL OXIDE COLLOIDAL PARTICLE HAVING IMPROVED WEATHER RESISTANCE, SOL THEREOF, AND PRODUCTION METHODS THEREFOR | 日産化学株式会社 | 2022-10-27 | — | — | WO | disclosed |
| WO-2022210960-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING UNDERLAYER FILM FOR INDUCED SELF-ORGANIZATION | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022210944-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022210825-A1 | POLYANILINE COMPOSITE BODY, SOLUTION COMPOSITION, RUST INHIBITOR, RUST PREVENTIVE COATING MATERIAL, RUST PREVENTIVE COATING FILM, METHOD FOR PRODUCING RUST PREVENTIVE COATING FILM, AND STRUCTURE | 出光興産株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022210262-A1 | LAMINATE, RELEASE AGENT COMPOSITION, AND METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022210901-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022210954-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | 日産化学株式会社 | 2022-10-06 | — | — | WO | disclosed |
| WO-2022196826-A1 | OILY INK COMPOSITION FOR WRITING UTENSIL | 三菱鉛筆株式会社 | 2022-09-22 | — | — | WO | disclosed |
| US-11450805-B2 | Compound, semiconductor material, and methods for manufacturing coating and semiconductor using the same | MERCK PATENT GMBH (DE) | 2022-09-20 | — | — | US | disclosed |
| US-11440985-B2 | Underlayer film-forming composition for use in forming a microphase-separated pattern | NISSAN CHEMICAL CORPORATION (JP) | 2022-09-13 | — | — | US | disclosed |
| CN-115016230-A | Composition for forming silicon-containing resist underlayer film | 日产化学工业株式会社 | 2022-09-06 | — | — | CN | disclosed |
| CN-111771238-B | Display device and liquid crystal aligning agent | JSR株式会社 | 2022-08-30 | — | — | CN | disclosed |
| CN-111742020-B | Composition for forming photocurable silicon-containing coating film | 日产化学株式会社 | 2022-08-16 | — | — | CN | disclosed |
| US-20220252977-A1 | A NEGATIVE TONE LIFT OFF RESIST COMPOSITION COMPRISING AN ALKALI SOLUBLE RESIN AND A PHOTO ACID GENERATOR, AND A METHOD FOR MANUFACTURING METAL FILM PATTERNS ON A SUBSTRATE. | MERCK PATENT GMBH (DE) | 2022-08-11 | — | — | US | disclosed |
| WO-2022153967-A1 | METAL REMOVAL METHOD USING METAL REMOVAL FILTER FOR REMOVING METAL IMPURITY FROM PHOTOSENSITIVE RESIN COMPOSITION | 日産化学株式会社 | 2022-07-21 | — | — | WO | disclosed |
| US-11392037-B2 | Resist underlayer film forming composition containing silicone having cyclic amino group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2022-07-19 | — | — | US | disclosed |
| US-20220221794-A1 | METHOD FOR MANUFACTURING CURED FILM AND USE OF THE SAME | MERCK PATENT GMBH (DE) | 2022-07-14 | — | — | US | disclosed |
| CN-109790414-B | Coating composition for pattern inversion | 日产化学株式会社 | 2022-07-12 | — | — | CN | disclosed |
| WO-2022136235-A1 | METHOD FOR REMOVING UPPER PART OF SACRIFICIAL LAYER, AND SACRIFICIAL SOLUTION AND ACIDIC AQUEOUS SOLUTION USED THEREFOR | MERCK PATENT GMBH (DE) | 2022-06-30 | — | — | WO | disclosed |
| WO-2022138331-A1 | FILM FORMATION METHOD AND ARTICLE MANUFACTURING METHOD | キヤノン株式会社 | 2022-06-30 | — | — | WO | disclosed |
| US-20220206395-A1 | COMPOSITION FOR RESIST PATTERN METALLIZATION PROCESS | NISSAN CHEMICAL CORPORATION (JP) | 2022-06-30 | — | — | US | disclosed |
| US-11370872-B2 | Composition for pattern formation, and pattern-forming method | JSR CORPORATION (JP) | 2022-06-28 | — | — | US | disclosed |
| US-11366389-B2 | Allyloxy derivative, resist underlayer forming composition using the same, and method of manufacturing resist underlayer and semiconductor device using the same | MERCK PATENT GMBH (DE) | 2022-06-21 | — | — | US | disclosed |
| US-20220187709-A1 | FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2022-06-16 | — | — | US | disclosed |
| US-20220187706-A1 | THIN FILM RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST FILM USING THE SAME | MERCK PATENT GMBH (DE) | 2022-06-16 | — | — | US | disclosed |
| US-20220177653-A1 | FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2022-06-09 | — | — | US | disclosed |
| WO-2022114132-A1 | SILICON-CONTAINING RESIST UNDERLYAER FILM FORMING COMPOSITION | 日産化学株式会社 | 2022-06-02 | — | — | WO | disclosed |
| WO-2022114134-A1 | COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION | 日産化学株式会社 | 2022-06-02 | — | — | WO | disclosed |
| US-20220163888-A1 | POSITIVE TYPE RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST PATTERN USING THE SAME | MERCK PATENT GMBH (DE) | 2022-05-26 | — | — | US | disclosed |
| US-20220155688-A1 | ALKALINE DEVELOPER SOLUABLE SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2022-05-19 | — | — | US | disclosed |
| US-20220153698-A1 | NOVEL COMPOUND, COMPOSITION CONTAINING SAID COMPOUND, SELF-HEALING MATERIAL, SURFACE COATING AGENT, PAINT, ADHESIVE, MATERIAL FOR BATTERY AND CURED PRODUCT | ADEKA CORPORATION (JP) | 2022-05-19 | — | — | US | disclosed |
| US-20220154013-A1 | SOLUTION COMPOSITION COMPRISING CONDUCTIVE POLYMER | IDEMITSU KOSAN CO.,LTD. (JP) | 2022-05-19 | — | — | US | disclosed |
| US-11335559-B2 | Pattern-forming method, and composition | JSR CORPORATION (JP) | 2022-05-17 | — | — | US | disclosed |
| WO-2022085517-A1 | BORON NITRIDE MATERIAL, AND RESIN COMPOSITION AND INSULATION MATERIAL CONTAINING SAID BORON NITRIDE MATERIAL | 株式会社ADEKA | 2022-04-28 | — | — | WO | disclosed |
| US-20220119568-A1 | POLYMER, SEMICONDUCTOR COMPOSITION COMPRISING POLYMER, AND METHOD FOR MANUFACTURING FILM USING SEMICONDUCTOR COMPOSITION | MERCK PATENT GMBH (DE) | 2022-04-21 | — | — | US | disclosed |
| US-20220100092-A1 | FILM FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2022-03-31 | — | — | US | disclosed |
| EP-3973357-A1 | A NEGATIVE TONE LIFT OFF RESIST COMPOSITION COMPRISING AN ALKALI SOLUBLE RESIN AND A PHOTO ACID GENERATOR, AND A METHOD FOR MANUFACTURING METAL FILM PATTERNS ON A SUBSTRATE | Merck Patent GmbH (DE) | 2022-03-30 | — | — | EP | disclosed |
| EP-3811152-B1 | A PHOTORESIST COMPOSITION, A METHOD FOR MANUFACTURING A PHOTORESIST COATING, ETCHED PHOTORESIST COATING, AND ETCHED SI CONTAINING LAYER(S), AND MANUFACTURING A DEVICE USING THEREOF | MERCK PATENT GMBH (DE) | 2022-03-23 | — | — | EP | disclosed |
| US-11281104-B2 | Alkaline developer soluable silicon-containing resist underlayer film-forming composition | NISSAN CHEMICAL CORPORATION (JP) | 2022-03-22 | — | — | US | disclosed |
| WO-2022054569-A1 | ARGAN EXTRACT MANUFACTURING METHOD, ARGAN EXTRACT, HAIR GROWTH PROMOTION AGENT, HAIR LOSS PREVENTION AGENT, AND HAIR CYCLE REGULATION AGENT | 株式会社ADEKA | 2022-03-17 | — | — | WO | disclosed |
| WO-2022043236-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST FILM USING THE SAME | MERCK PATENT GMBH (DE) | 2022-03-03 | — | — | WO | disclosed |
| WO-2022045270-A1 | METHOD FOR PURIFYING COMPOUND OR POLYMER | 三菱瓦斯化学株式会社 | 2022-03-03 | — | — | WO | disclosed |
| EP-3948418-A1 | POSITIVE TYPE RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST PATTERN USING THE SAME | Merck Patent GmbH (DE) | 2022-02-09 | — | — | EP | disclosed |
| EP-3950332-A1 | SOLUTION COMPOSITION CONTAINING CONDUCTIVE POLYMER | Idemitsu Kosan Co., Ltd. (JP) | 2022-02-09 | — | — | EP | disclosed |
| WO-2022023230-A1 | METHOD FOR USING COMPOSITION COMPRISING CARBOXYLIC ACID ESTER, LITHOGRAPHY COMPOSITION COMPRISING CARBOXYLIC ACID ESTER, AND METHOD FOR MANUFACTURING RESIST PATTERN | MERCK PATENT GMBH (DE) | 2022-02-03 | — | — | WO | disclosed |
| CN-107533302-B | Composition for coating resist pattern | 日产化学工业株式会社 | 2022-02-01 | — | — | CN | disclosed |
| US-20220017760-A1 | OIL-BASED INK COMPOSITION FOR WRITING UTENSILS, WRITING UTENSIL USING SAME, AND AIRBRUSH UNIT USING SAME | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2022-01-20 | — | — | US | disclosed |
| CN-113906084-A | Film-forming composition | 日产化学株式会社 | 2022-01-07 | — | — | CN | disclosed |
| EP-3932906-A1 | NOVEL COMPOUND, COMPOSITION CONTAINING SAID COMPOUND, AND CURED OBJECT | ADEKA CORPORATION (JP) | 2022-01-05 | — | — | EP | disclosed |
| CN-113891906-A | Film-forming composition | 日产化学株式会社 | 2022-01-04 | — | — | CN | disclosed |
| CN-110191930-B | Composition for forming underlayer film for forming fine phase separation pattern | 日产化学株式会社 | 2022-01-04 | — | — | CN | disclosed |
| CN-113874785-A | Negative-type lift-off resist composition comprising alkali-soluble resin and photoacid generator and method for producing metal film pattern on substrate | 默克专利有限公司 | 2021-12-31 | — | — | CN | disclosed |
| US-20210395462-A1 | FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2021-12-23 | — | — | US | disclosed |
| US-11204552-B2 | Radiation-sensitive composition, pattern-forming method and radiation-sensitive acid generating agent | JSR CORPORATION (JP) | 2021-12-21 | — | — | US | disclosed |
| CN-113785243-A | Composition for resist pattern metallization process | 日产化学株式会社 | 2021-12-10 | — | — | CN | disclosed |
| CN-113767334-A | Method for producing cured film and use thereof | 默克专利有限公司 | 2021-12-07 | — | — | CN | disclosed |
| US-11175583-B2 | Silicon-containing resist underlayer film-forming composition having phenyl group-containing chromophore | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2021-11-16 | — | — | US | disclosed |
| EP-3309614-B1 | RADIATION SENSITIVE COMPOSITION | NISSAN CHEMICAL CORP (JP) | 2021-11-10 | — | — | EP | disclosed |
| CN-113632007-A | Positive resist composition and method for producing resist pattern using same | 默克专利有限公司 | 2021-11-09 | — | — | CN | disclosed |
| CN-113632006-A | Thick film resist composition and method for producing resist film using the same | 默克专利有限公司 | 2021-11-09 | — | — | CN | disclosed |
| CN-113573899-A | Solution composition containing conductive polymer | 出光兴产株式会社 | 2021-10-29 | — | — | CN | disclosed |
| CN-113544120-A | Novel compound, composition containing same, and cured product | 株式会社ADEKA | 2021-10-22 | — | — | CN | disclosed |
| WO-2021209476-A1 | A SPIN COATING COMPOSITION COMPRISING A CARBON MATERIAL, A METAL ORGANIC COMPOUND, AND SOLVENT, AND A MANUFACTURING METHOD OF A METAL OXIDE FILM ABOVE A SUBSTRATE | MERCK PATENT GMBH (DE) | 2021-10-21 | — | — | WO | disclosed |
| US-11148460-B2 | Writing instrument | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2021-10-19 | — | — | US | disclosed |
| CN-110198995-B | Composition for forming self-assembled film for forming fine phase separation pattern | 日产化学株式会社 | 2021-10-08 | — | — | CN | disclosed |
| EP-3885414-A1 | OIL-BASED INK COMPOSITION FOR WRITING UTENSILS, WRITING UTENSIL USING SAME AND AIR BRUSH UNIT USING SAME | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2021-09-29 | — | — | EP | disclosed |
| CN-113454131-A | Polymer, semiconductor composition containing polymer, and method for producing film using semiconductor composition | 默克专利有限公司 | 2021-09-28 | — | — | CN | disclosed |
| CN-109563371-B | Polysiloxane composition comprising acetal-protected silanol groups | 日产化学株式会社 | 2021-09-21 | — | — | CN | disclosed |
| US-11126084-B2 | Composition for resist underlayer film formation, resist underlayer film and forming method thereof, production method of patterned substrate, and compound | JSR CORPORATION (JP) | 2021-09-21 | — | — | US | disclosed |
| US-20210284782-A1 | COMPOSITION FOR FORMING BLOCK COPOLYMER LAYER FOR FORMATION OF MICROPHASE-SEPARATED PATTERN | NISSAN CHEMICAL CORPORATION (JP) | 2021-09-16 | — | — | US | disclosed |
| WO-2021180606-A1 | A METHOD OF MANUFACTURING SEGREGATED LAYERS ABOVE A SUBSTRATE, AND A METHOD FOR MANUFACTURING A DEVICE | MERCK PATENT GMBH (DE) | 2021-09-16 | — | — | WO | disclosed |
| US-11117996-B2 | Self-assembly composition for pattern formation and pattern forming method | Oji Holdings Corporation (JP) | 2021-09-14 | — | — | US | disclosed |
| CN-113227214-A | Film-forming composition | 日产化学株式会社 | 2021-08-06 | — | — | CN | disclosed |
| CN-113227281-A | Film-forming composition | 日产化学株式会社 | 2021-08-06 | — | — | CN | disclosed |
| US-11066571-B2 | Pattern forming method, under coating agent, and laminate | Oji Holdings Corporation (JP) | 2021-07-20 | — | — | US | disclosed |
| CN-109863039-B | Writing implement | 三菱铅笔株式会社 | 2021-07-16 | — | — | CN | disclosed |
| CN-113056530-A | Oil-based ink composition for writing instrument, writing instrument using same, and spray gun unit using same | 三菱铅笔株式会社 | 2021-06-29 | — | — | CN | disclosed |
| CN-106662820-B | Composition for forming silicon-containing resist underlayer film having halosulfonylalkyl group | 日产化学工业株式会社 | 2021-06-22 | — | — | CN | disclosed |
| US-20210181636-A1 | ALLYLOXY DERIVATIVE, RESIST UNDERLAYER FORMING COMPOSITION USING THE SAME, AND METHOD OF MANUFACTURING RESIST UNDERLAYER AND SEMICONDUCTOR DEVICE USING THE SAME | MERCK PATENT GMBH (DE) | 2021-06-17 | — | — | US | disclosed |
| US-20210181635-A1 | SEMICONDUCTOR DEVICE PRODUCTION METHOD EMPLOYING SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION INCLUDING ORGANIC GROUP HAVING AMMONIUM GROUP | NISSAN CHEMICAL CORPORATION (JP) | 2021-06-17 | — | — | US | disclosed |
| CN-107003613-B | Composition for forming resist underlayer film for lithography containing hydrolyzable silane having halogen-containing carboxylic acid amide group | 日产化学工业株式会社 | 2021-06-15 | — | — | CN | disclosed |
| CN-112947000-A | Composition for forming silicon-containing EUV resist underlayer film containing sulfonic acid/salt | 日产化学工业株式会社 | 2021-06-11 | — | — | CN | disclosed |
| CN-107966879-B | Composition for forming silicon-containing extreme ultraviolet resist underlayer film containing additive | 日产化学工业株式会社 | 2021-06-01 | — | — | CN | disclosed |
| US-11022884-B2 | Silicon-containing resist underlayer film-forming composition having halogenated sulfonylalkyl group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2021-06-01 | — | — | US | disclosed |
| CN-107077072-B | Composition for forming resist underlayer film containing silicon and capable of wet removal | 日产化学工业株式会社 | 2021-05-25 | — | — | CN | disclosed |
| US-20210147699-A1 | OIL-BASED INK COMPOSITION FOR WRITING IMPLEMENTS | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2021-05-20 | — | — | US | disclosed |
| US-20210147603-A1 | SELF-ASSEMBLY COMPOSITION FOR PATTERN FORMATION AND PATTERN FORMING METHOD | Oji Holdings Corporation (JP) | 2021-05-20 | — | — | US | disclosed |
| US-20210149307-A1 | UNDERLAYER FILM-FORMING COMPOSITION, PATTERN-FORMING METHOD, AND COPOLYMER FOR FORMING UNDERLAYER FILM USED FOR PATTERN FORMATION | Oji Holdings Corporation (JP) | 2021-05-20 | — | — | US | disclosed |
| US-11003079-B2 | Composition for film formation, film, resist underlayer film-forming method, production method of patterned substrate, and compound | JSR CORPORATION (JP) | 2021-05-11 | — | — | US | disclosed |
| CN-112771091-A | Composition for forming block copolymer layer for forming fine phase separation pattern | 日产化学株式会社 | 2021-05-07 | — | — | CN | disclosed |
| US-10995172-B2 | Self-organized film-forming composition for use in forming a micro-phase-separated pattern | NISSAN CHEMICAL CORPORATION (JP) | 2021-05-04 | — | — | US | disclosed |
| US-20210124266-A1 | PRIMER FOR SEMICONDUCTOR SUBSTRATE AND METHOD FOR FORMING A PATTERN | NISSAN CHEMICAL CORPORATION (JP) | 2021-04-29 | — | — | US | disclosed |
| EP-3811152-A1 | A PHOTORESIST COMPOSITION, A METHOD FOR MANUFACTURING A PHOTORESIST COATING, ETCHED PHOTORESIST COATING, AND ETCHED SI CONTAINING LAYER(S), AND MANUFACTURING A DEVICE USING THEREOF | Merck Patent GmbH (DE) | 2021-04-28 | — | — | EP | disclosed |
| US-10982032-B2 | Self-assembly composition for pattern formation and pattern forming method | Oji Holdings Corporation (JP) | 2021-04-20 | — | — | US | disclosed |
| CN-108055851-B | Coating agent for planarizing pattern reverse containing silicon | 日产化学工业株式会社 | 2021-03-30 | — | — | CN | disclosed |
| CN-112558410-A | Composition for forming silicon-containing resist underlayer film having organic group containing aliphatic polycyclic structure | 日产化学工业株式会社 | 2021-03-26 | — | — | CN | disclosed |
| CN-109071823-B | Self-organized composition for pattern formation and pattern formation method | 王子控股株式会社 | 2021-03-23 | — | — | CN | disclosed |
| US-20210060528-A1 | METAL REMOVAL AGENT AND METAL REMOVAL METHOD FOR REMOVING METAL IMPURITIES IN SOLUTION | NISSAN CHEMICAL CORPORATION (JP) | 2021-03-04 | — | — | US | disclosed |
| US-20210054231-A1 | COMPOSITION FOR FORMING PHOTOCURABLE SILICON-CONTAINING COATING FILM | NISSAN CHEMICAL CORPORATION (JP) | 2021-02-25 | — | — | US | disclosed |
| WO-2021029097-A1 | OIL-BASED INK COMPOSITION FOR WRITING IMPLEMENTS | 三菱鉛筆株式会社 | 2021-02-18 | — | — | WO | disclosed |
| US-20210032548-A1 | COMPOSITION FOR REMOVING SULFUR-CONTAINING COMPOUNDS | KURARAY CO., LTD. (JP) | 2021-02-04 | — | — | US | disclosed |
| US-10910220-B2 | Planarization method for a semiconductor substrate using a silicon-containing composition | NISSAN CHEMICAL CORPORATION (JP) | 2021-02-02 | — | — | US | disclosed |
| CN-112292637-A | Photoresist composition, methods for producing photoresist coating, etched photoresist coating, and etched silicon-containing layer, and method for producing device using the same | 默克专利有限公司 | 2021-01-29 | — | — | CN | disclosed |
| US-20210018840-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION WHICH CONTAINS PROTECTED PHENOLIC GROUP AND NITRIC ACID | NISSAN CHEMICAL CORPORATION (JP) | 2021-01-21 | — | — | US | disclosed |
| EP-3229075-B1 | PHOTORESIST COMPOSITION, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING RESIST PATTERN | JSR CORP (JP) | 2021-01-06 | — | — | EP | disclosed |
| EP-3760293-A1 | COMPOSITION FOR REMOVING SULFUR-CONTAINING COMPOUND | Kuraray Co., Ltd. (JP) | 2021-01-06 | — | — | EP | disclosed |
| US-20200401046-A1 | AN ETHYNYL DERIVED COMPOSITE, A COMPOSITION COMPRISING THEREOF, A METHOD FOR MANUFACTURING A COATING BY IT, AND A METHOD FOR MANUFACTURING A DEVICE COMPRISING THE COATING | MERCK PATENT GMBH (DE) | 2020-12-24 | — | — | US | disclosed |
| US-20200401044-A1 | PATTERN-FORMING MATERIAL, PATTERN-FORMING METHOD, AND MONOMER FOR PATTERN-FORMING MATERIAL | Oji Holdings Corporation (JP) | 2020-12-24 | — | — | US | disclosed |
| US-20200401047-A1 | UNDERLAYER FILM-FORMING COMPOSITION, PATTERN-FORMING METHOD, COPOLYMER, AND MONOMER FOR UNDERLAYER FILM-FORMING COMPOSITION | Oji Holdings Corporation (JP) | 2020-12-24 | — | — | US | disclosed |
| EP-2485090-B1 | Radiation-sensitive resin composition for forming resist pattern | JSR CORP (JP) | 2020-12-23 | — | — | EP | disclosed |
| CN-107209460-B | Composition for forming resist underlayer film for lithography containing hydrolyzable silane having carbonate skeleton | 日产化学工业株式会社 | 2020-12-18 | — | — | CN | disclosed |
| CN-112041746-A | Primer for semiconductor substrate and pattern forming method | 日产化学株式会社 | 2020-12-04 | — | — | CN | disclosed |
| EP-3034492-B1 | METHOD FOR PRODUCING DIALKYL POLYSULFIDE, DIALKYL POLYSULFIDE, EXTREME-PRESSURE ADDITIVE AND LUBRICATING FLUID COMPOSITION | DAINIPPON INK & CHEMICALS (JP) | 2020-11-25 | — | — | EP | disclosed |
| CN-106714766-B | Method for producing a particulate dental filler composition | 登特斯普伊德特雷有限公司 | 2020-11-24 | — | — | CN | disclosed |
| US-10845703-B2 | Film-forming composition containing silicone having crosslinking reactivity | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2020-11-24 | — | — | US | disclosed |
| EP-3395859-B1 | SELF-ASSEMBLING COMPOSITION FOR PATTERN FORMATION USE, AND PATTERN FORMATION METHOD | OJI HOLDINGS CORP (JP) | 2020-11-18 | — | — | EP | disclosed |
| US-10838303-B2 | Resist underlayer film forming composition for lithography containing hydrolyzable silane having carbonate skeleton | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2020-11-17 | — | — | US | disclosed |
| US-20200357633-A1 | PATTERN-FORMING METHOD, AND COMPOSITION | JSR CORPORATION (JP) | 2020-11-12 | — | — | US | disclosed |
| CN-111902774-A | Composition for forming silicon-containing resist underlayer film containing nitric acid and protected phenol group | 日产化学株式会社 | 2020-11-06 | — | — | CN | disclosed |
| EP-3732536-A1 | A NEGATIVE TONE LIFT OFF RESIST COMPOSITION COMPRISING AN ALKALI SOLUBLE RESIN AND CROSS LINKERS AND A METHOD FOR MANUFACTURING METAL FILM PATTERNS ON A SUBSTRATE | Merck Patent GmbH (DE) | 2020-11-04 | — | — | EP | disclosed |
| EP-3729196-A1 | AN ETHYNYL DERIVED COMPOSITE, A COMPOSITION COMPRISING THEREOF, A METHOD FOR MANUFACTURING A COATING BY IT, AND A METHOD FOR MANUFACTURING A DEVICE COMPRISING THE COATING | Merck Patent GmbH (DE) | 2020-10-28 | — | — | EP | disclosed |
| CN-108699389-B | Coating agent for pattern inversion containing silicon | 日产化学株式会社 | 2020-10-27 | — | — | CN | disclosed |
| CN-111801158-A | Metal removing agent for removing metal impurities in solution and metal removing method | 日产化学株式会社 | 2020-10-20 | — | — | CN | disclosed |
| CN-111788526-A | Material for pattern formation, method for pattern formation, and single body for pattern formation material | 王子控股株式会社 | 2020-10-16 | — | — | CN | disclosed |
| US-20200326623-A1 | A NEGATIVE TONE LIFT OFF RESIST COMPOSITION COMPRISING AN ALKALI SOLUBLE RESIN AND CROSS LINKERS AND A METHOD FOR MANUFACTURING METAL FILM PATTERNS ON A SUBSTRATE | MERCK PATENT GMBH (DE) | 2020-10-15 | — | — | US | disclosed |
| CN-111771238-A | Display device and method for producing same, liquid crystal aligning agent and curable composition | JSR株式会社 | 2020-10-13 | — | — | CN | disclosed |
| CN-111757773-A | Composition for removing sulfur-containing compounds | 株式会社可乐丽 | 2020-10-09 | — | — | CN | disclosed |
| CN-111744462-A | Metal adsorbent for removing metal impurities in epoxy resin and metal removing method | 日产化学株式会社 | 2020-10-09 | — | — | CN | disclosed |
| CN-111742020-A | Composition for forming photocurable silicon-containing coating film | 日产化学株式会社 | 2020-10-02 | — | — | CN | disclosed |
| WO-2020193522-A1 | THIN FILM RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST FILM USING THE SAME | MERCK PATENT GMBH (DE) | 2020-10-01 | — | — | WO | disclosed |
| WO-2020196642-A1 | FILM-FORMING COMPOSITION | 日産化学株式会社 | 2020-10-01 | — | — | WO | disclosed |
| WO-2020196563-A1 | FILM-FORMING COMPOSITION | 日産化学株式会社 | 2020-10-01 | — | — | WO | disclosed |
| WO-2020193686-A1 | POSITIVE TYPE RESIST COMPOSITION AND METHOD FOR MANUFACTURING RESIST PATTERN USING THE SAME | MERCK PATENT GMBH (DE) | 2020-10-01 | — | — | WO | disclosed |
| CN-109003385-B | Coin separation recognition device | 浙江海洋大学 | 2020-09-25 | — | — | CN | disclosed |
| US-20200301283-A1 | SOLUTION, METHOD OF FORMING RESIST PATTERN, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD | TOKYO OHKA KOGYO CO., LTD. (JP) | 2020-09-24 | — | — | US | disclosed |
| CN-107250293-B | Water-based ink composition for writing instrument | 三菱铅笔株式会社 | 2020-09-15 | — | — | CN | disclosed |
| CN-104246614-B | Composition for forming silicon-containing extreme ultraviolet resist underlayer film containing additive | 日产化学工业株式会社 | 2020-09-08 | — | — | CN | disclosed |
| CN-107075302-B | Film-forming composition containing crosslinking reactive silicon | 日产化学工业株式会社 | 2020-08-04 | — | — | CN | disclosed |
| US-20200225584-A1 | ALKALINE DEVELOPER SOLUABLE SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2020-07-16 | — | — | US | disclosed |
| CN-111386493-A | Liquid crystal aligning agent, liquid crystal alignment film, method for producing liquid crystal alignment film, and liquid crystal display element | 日产化学株式会社 | 2020-07-07 | — | — | CN | disclosed |
| WO-2020138189-A1 | FILM FORMING COMPOSITION | 日産化学株式会社 | 2020-07-02 | — | — | WO | disclosed |
| CN-111352301-A | Radiation-sensitive resin composition and method for forming microlens | JSR株式会社 | 2020-06-30 | — | — | CN | disclosed |
| US-10691019-B2 | Pattern-forming method and composition | JSR CORPORATION (JP) | 2020-06-23 | — | — | US | disclosed |
| US-20200190346-A1 | OIL-BASED INK COMPOSITION FOR WRITING INSTRUMENT | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2020-06-18 | — | — | US | disclosed |
| EP-3000806-B1 | DIALKYL POLYSULFIDE, PROCESS FOR PREPARING DIALKYL POLYSULFIDE, EXTREME-PRESSURE ADDITIVE AND LUBRICATING FLUID COMPOSITION | DAINIPPON INK & CHEMICALS (JP) | 2020-06-17 | — | — | EP | disclosed |
| CN-111226175-A | Method for manufacturing semiconductor device using silicon-containing resist underlayer film-forming composition containing organic group having ammonium group | 日产化学株式会社 | 2020-06-02 | — | — | CN | disclosed |
| US-20200166836-A1 | PATTERN FORMING METHOD | CANON KABUSHIKI KAISHA (JP) | 2020-05-28 | — | — | US | disclosed |
| EP-3654102-A1 | UNDERLAYER FILM-FORMING COMPOSITION, PATTERN-FORMING METHOD, AND COPOLYMER FOR FORMING UNDERLAYER FILM USED FOR PATTERN FORMATION | Oji Holdings Corporation (JP) | 2020-05-20 | — | — | EP | disclosed |
| EP-3647378-A1 | OIL-BASED INK COMPOSITION FOR WRITING IMPLEMENTS | Mitsubishi Pencil Company, Limited (JP) | 2020-05-06 | — | — | EP | disclosed |
| WO-2020085508-A1 | FILM-FORMING COMPOSITION | 日産化学株式会社 | 2020-04-30 | — | — | WO | disclosed |
| US-20200123298-A1 | SELF-ORGANIZED FILM-FORMING COMPOSITION FOR USE IN FORMING A MICRO-PHASE-SEPARATED PATTERN | NISSAN CHEMICAL CORPORATION (JP) | 2020-04-23 | — | — | US | disclosed |
| EP-3632997-A1 | OIL-BASED INK COMPOSITION FOR WRITING INSTRUMENT | Mitsubishi Pencil Company, Limited (JP) | 2020-04-08 | — | — | EP | disclosed |
| US-10610459-B2 | Process for the preparation of a particulate dental filler composition | DENTSPLY SIRONA INC. (US) | 2020-04-07 | — | — | US | disclosed |
| US-10613440-B2 | Silicon-containing EUV resist underlayer film-forming composition containing onium sulfonate | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2020-04-07 | — | — | US | disclosed |
| CN-104737076-B | Composition for forming silicon-containing resist underlayer film having ester group | 日产化学工业株式会社 | 2020-04-03 | — | — | CN | disclosed |
| CN-110869851-A | Underlayer coating forming composition, pattern forming method, and copolymer for forming underlayer coating forming pattern | 王子控股株式会社 | 2020-03-06 | — | — | CN | disclosed |
| US-10564546-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2020-02-18 | — | — | US | disclosed |
| CN-110809610-A | Oil-based ink composition for writing instrument | 三菱铅笔株式会社 | 2020-02-18 | — | — | CN | disclosed |
| CN-110809739-A | Composition for forming silicon-containing resist underlayer film, soluble in alkaline developer | 日产化学株式会社 | 2020-02-18 | — | — | CN | disclosed |
| US-20200048491-A1 | PATTERN FORMING METHOD, UNDER COATING AGENT, AND LAMINATE | Oji Holdings Corporation (JP) | 2020-02-13 | — | — | US | disclosed |
| US-10558119-B2 | Composition for coating resist pattern | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2020-02-11 | — | — | US | disclosed |
| CN-106575090-B | Coating composition for pattern inversion on SOC pattern | 日产化学工业株式会社 | 2020-02-07 | — | — | CN | disclosed |
| US-20200041906-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CARBONYL STRUCTURE | NISSAN CHEMICAL CORPORATION (JP) | 2020-02-06 | — | — | US | disclosed |
| US-20200041902-A9 | RADIATION-SENSITIVE COMPOSITION, PATTERN-FORMING METHOD AND RADIATION-SENSITIVE ACID GENERATING AGENT | JSR CORPORATION (JP) | 2020-02-06 | — | — | US | disclosed |
| US-20200044158-A1 | NOVEL COMPOUND, SEMICONDUCTOR MATERIAL, AND METHODS FOR MANUFACTURING COATING AND SEMICONDUCTOR USING THE SAME | MERCK PATENT GMBH (DE) | 2020-02-06 | — | — | US | disclosed |
| EP-2995659-B1 | INK COMPOSITION FOR WRITING INSTRUMENT AND COLORING MATERIAL | MITSUBISHI PENCIL CO (JP) | 2020-02-05 | — | — | EP | disclosed |
| WO-2020017494-A1 | BLOCK COPOLYMER LAYER FORMING COMPOSITION FOR FORMING MICROPHASE-SEPARATED PATTERN | 日産化学株式会社 | 2020-01-23 | — | — | WO | disclosed |
| CN-106462075-B | Composition for forming resist underlayer film containing silicon having phenyl chromophore | 日产化学工业株式会社 | 2019-12-06 | — | — | CN | disclosed |
| CN-110431984-A | Fish high transmission ratio laver harvester peculiar to vessel | LANXI PURUNSI AQUACULTURE TECH CO LTD | 2019-11-12 | — | — | CN | disclosed |
| US-20190339618-A1 | SILICON-CONTAINING COATING AGENT FOR PATTERN REVERSAL | NISSAN CHEMICAL CORPORATION (JP) | 2019-11-07 | — | — | US | disclosed |
| EP-3558917-A1 | NOVEL COMPOUND, SEMICONDUCTOR MATERIAL, AND METHODS FOR MANUFACTURING COATING AND SEMICONDUCTOR USING THE SAME | Merck Patent GmbH (DE) | 2019-10-30 | — | — | EP | disclosed |
| WO-2019188829-A1 | DISPLAY DEVICE, METHOD FOR PRODUCING SAME, LIQUID CRYSTAL ALIGNING AGENT AND CURABLE COMPOSITION | JSR株式会社 | 2019-10-03 | — | — | WO | disclosed |
| WO-2019189877-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | JSR株式会社 | 2019-10-03 | — | — | WO | disclosed |
| CN-110284471-A | A kind of offshore oil collection device reducing pollution | 浙江省海洋水产研究所 | 2019-09-27 | — | — | CN | disclosed |
| US-20190292403-A1 | COATING COMPOSITION FOR PATTERN INVERSION | NISSAN CHEMICAL CORPORATION (JP) | 2019-09-26 | — | — | US | disclosed |
| EP-3533524-A1 | PATTERN FORMING METHOD, BASE AGENT AND LAMINATE | Oji Holdings Corporation (JP) | 2019-09-04 | — | — | EP | disclosed |
| US-20190265593-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING ORGANIC GROUP HAVING DIHYDROXY GROUP | NISSAN CHEMICAL CORPORATION (JP) | 2019-08-29 | — | — | US | disclosed |
| US-10394121-B2 | Pattern-forming method and composition | JSR CORPORATION (JP) | 2019-08-27 | — | — | US | disclosed |
| US-20190243247-A1 | COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM AND FORMING METHOD THEREOF, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND | JSR CORPORATION (JP) | 2019-08-08 | — | — | US | disclosed |
| US-10372039-B2 | Resist underlayer film forming composition containing silicon having ester group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2019-08-06 | — | — | US | disclosed |
| US-10372040-B2 | Resist underlayer film forming composition for lithography containing hydrolyzable silane having halogen-containing carboxylic acid amide group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2019-08-06 | — | — | US | disclosed |
| US-20190235386-A1 | PATTERN-FORMING METHOD AND COMPOSITION | JSR CORPORATION (JP) | 2019-08-01 | — | — | US | disclosed |
| US-20190211130-A1 | SELF-ASSEMBLY COMPOSITION FOR PATTERN FORMATION AND PATTERN FORMING METHOD | Oji Holdings Corporation (JP) | 2019-07-11 | — | — | US | disclosed |
| EP-3505363-A1 | WRITING IMPLEMENT | Mitsubishi Pencil Company, Limited (JP) | 2019-07-03 | — | — | EP | disclosed |
| US-20190193454-A1 | WRITING INSTRUMENT | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2019-06-27 | — | — | US | disclosed |
| US-20190185707-A1 | ACETAL-PROTECTED SILANOL GROUP-CONTAINING POLYSILOXANE COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2019-06-20 | — | — | US | disclosed |
| US-20190155162-A1 | PATTERN-FORMING METHOD AND COMPOSITION FOR RESIST PATTERN-REFINEMENT | JSR CORPORATION (JP) | 2019-05-23 | — | — | US | disclosed |
| US-20190135967-A1 | COMPOSITION FOR PATTERN FORMATION, AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2019-05-09 | — | — | US | disclosed |
| US-10280328-B2 | Bottom layer film-forming composition of self-organizing film containing styrene structure | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2019-05-07 | — | — | US | disclosed |
| EP-1520891-B1 | FILM FORMING COMPOSITION, PROCESS FOR PRODUCING FILM FORMING COMPOSITION, INSULATING FILM FORMING MATERIAL, PROCESS FOR FORMING FILM, AND SILICA-BASED FILM | JSR CORP (JP) | 2019-05-01 | — | — | EP | disclosed |
| US-20190107777-A1 | PATTERN-FORMING METHOD AND COMPOSITION | JSR CORPORATION (JP) | 2019-04-11 | — | — | US | disclosed |
| CN-109566763-A | A kind of double helix cheese stretching-machine | 金华市邀特科技有限公司 | 2019-04-05 | — | — | CN | disclosed |
| US-20190094695-A1 | COMPOSITION FOR FILM FORMATION, FILM, RESIST UNDERLAYER FILM-FORMING METHOD, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND | JSR CORPORATION (JP) | 2019-03-28 | — | — | US | disclosed |
| EP-3459981-A1 | SELF-ASSEMBLY COMPOSITION FOR PATTERN FORMATION, AND PATTERN FORMATION METHOD | Oji Holdings Corporation (JP) | 2019-03-27 | — | — | EP | disclosed |
| US-10209619-B2 | Composition and method of forming pattern using composition | JSR CORPORATION (JP) | 2019-02-19 | — | — | US | disclosed |
| US-20190051518-A1 | PLANARIZATION METHOD FOR A SEMICONDUCTOR SUBSTRATE USING A SILICON-CONTAINING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2019-02-14 | — | — | US | disclosed |
| US-20190040207-A1 | SILICON-CONTAINING COATING AGENT FOR REVERSING PLANARIZATION PATTERN | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2019-02-07 | — | — | US | disclosed |
| US-10197917-B2 | Silicon-containing resists underlayer film-forming composition having phenyl group-containing chromophore | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2019-02-05 | — | — | US | disclosed |
| US-10175575-B2 | Pattern-forming method and composition | JSR CORPORATION (JP) | 2019-01-08 | — | — | US | disclosed |
| US-20180362692-A1 | SELF-ASSEMBLY COMPOSITION FOR PATTERN FORMATION AND PATTERN FORMING METHOD | Oji Holdings Corporation (JP) | 2018-12-20 | — | — | US | disclosed |
| US-20180342387-A1 | PATTERN-FORMING METHOD, AND COMPOSITION | JSR CORPORATION (JP) | 2018-11-29 | — | — | US | disclosed |
| US-10139729-B2 | Coating composition for pattern reversal on soc pattern | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-11-27 | — | — | US | disclosed |
| US-20180335698-A1 | FILM-FORMING COMPOSITION CONTAINING SILICONE HAVING CROSSLINKING REACTIVITY | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-11-22 | — | — | US | disclosed |
| US-10131860-B2 | Dialkyl polysulfide, process for preparing dialkyl polysulfide, extreme pressure additive, and lubricating fluid composition | DIC CORPORATION (JP) | 2018-11-20 | — | — | US | disclosed |
| EP-3395859-A1 | SELF-ASSEMBLING COMPOSITION FOR PATTERN FORMATION USE, AND PATTERN FORMATION METHOD | Oji Holdings Corporation (JP) | 2018-10-31 | — | — | EP | disclosed |
| US-10100138-B2 | Dispersant and method for producing same, ink, and method for forming electro-conductive pattern | RICOH COMPANY, LTD. (JP) | 2018-10-16 | — | — | US | disclosed |
| US-10090163-B2 | Inorganic film-forming composition for multilayer resist processes, and pattern-forming method | JSR CORPORATION (JP) | 2018-10-02 | — | — | US | disclosed |
| US-10088750-B2 | Acid diffusion control agent, radiation-sensitive resin composition, resist pattern-forming method, compound, and production method | JSR CORPORATION (JP) | 2018-10-02 | — | — | US | disclosed |
| US-10082735-B2 | Silicon-containing resist underlayer film-forming composition having organic group having aliphatic polycyclic structure | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-09-25 | — | — | US | disclosed |
| US-20180267406-A1 | RADIATION-SENSITIVE COMPOSITION, PATTERN-FORMING METHOD AND RADIATION-SENSITIVE ACID GENERATING AGENT | JSR CORPORATION (JP) | 2018-09-20 | — | — | US | disclosed |
| US-20180263862-A1 | PROCESS FOR THE PREPARATION OF A PARTICULATE DENTAL FILLER COMPOSITION | DENTSPLY SIRONA INC. (US) | 2018-09-20 | — | — | US | disclosed |
| US-10079146-B2 | Resist underlayer film forming composition containing silicon containing cyclic organic group having hetero atom | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-09-18 | — | — | US | disclosed |
| US-10073349-B2 | Chemically amplified resist material, pattern-forming method, compound, and production method of compound | OSAKA UNIVERSITY (JP) | 2018-09-11 | — | — | US | disclosed |
| US-20180239250-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING HYDROLYZABLE SILANE HAVING CARBONATE SKELETON | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-08-23 | — | — | US | disclosed |
| US-10025188-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-17 | — | — | US | disclosed |
| US-20180197731-A1 | RESIST PATTERN COATING COMPOSITION INCLUDING VINYL GROUP- OR (METH) ACRYLOXY GROUP-CONTAINING POLYSILOXANE | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-07-12 | — | — | US | disclosed |
| US-20180192524-A1 | FORMING METHOD OF CONTACT HOLE PATTERN | JSR CORPORATION (JP) | 2018-07-05 | — | — | US | disclosed |
| US-20180181000-A1 | RADIATION SENSITIVE COMPOSITION | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-06-28 | — | — | US | disclosed |
| WO-2018115043-A1 | NOVEL COMPOUND, SEMICONDUCTOR MATERIAL, AND METHODS FOR MANUFACTURING COATING AND SEMICONDUCTOR USING THE SAME | MERCK PATENT GMBH (DE) | 2018-06-28 | — | — | WO | disclosed |
| US-10000664-B2 | Underlayer film-forming composition for self-assembled films | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-06-19 | — | — | US | disclosed |
| US-9989849-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-06-05 | — | — | US | disclosed |
| US-20180149977-A1 | COMPOSITION FOR COATING RESIST PATTERN | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-05-31 | — | — | US | disclosed |
| EP-2848662-B1 | Dispersant and method for producing same, ink, and method for forming electro-conductive pattern | RICOH CO LTD (JP) | 2018-05-30 | — | — | EP | disclosed |
| EP-3309614-A1 | RADIATION SENSITIVE COMPOSITION | Nissan Chemical Industries, Ltd. (JP) | 2018-04-18 | — | — | EP | disclosed |
| US-9946158-B2 | Composition for forming resist underlayer film for nanoimprint | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-04-17 | — | — | US | disclosed |
| US-9921474-B2 | Pattern-forming method and composition | JSR CORPORATION (JP) | 2018-03-20 | — | — | US | disclosed |
| EP-2461350-B1 | USE OF A COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT LITHOGRAPHY | NISSAN CHEMICAL IND LTD (JP) | 2018-02-28 | — | — | EP | disclosed |
| US-9891526-B2 | Pattern forming method | JSR CORPORATION (JP) | 2018-02-13 | — | — | US | disclosed |
| US-9874816-B2 | Radiation-sensitive resin composition and resist pattern-forming method | JSR CORPORATION (JP) | 2018-01-23 | — | — | US | disclosed |
| US-20180016457-A1 | AQUEOUS INK COMPOSITION FOR WRITING INSTRUMENTS | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2018-01-18 | — | — | US | disclosed |
| US-20170371242-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM REMOVABLE BY WET PROCESS | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-12-28 | — | — | US | disclosed |
| EP-3260506-A1 | AQUEOUS INK COMPOSITION FOR WRITING TOOLS | Mitsubishi Pencil Co., Ltd. (JP) | 2017-12-27 | — | — | EP | disclosed |
| US-20170363961-A9 | RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-12-21 | — | — | US | disclosed |
| US-20170362412-A1 | COMPOSITION FOR FILM FORMATION, AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-12-21 | — | — | US | disclosed |
| US-20170351174-A1 | PATTERN-FORMING METHOD AND COMPOSITION | JSR CORPORATION (JP) | 2017-12-07 | — | — | US | disclosed |
| CN-107381358-A | A kind of limiter for being used for the disconnected rope of pine | 浦江县顺光科技有限公司 | 2017-11-24 | — | — | CN | disclosed |
| US-20170329228-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-11-16 | — | — | US | disclosed |
| US-20170322492-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-11-09 | — | — | US | disclosed |
| US-20170322491-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING HYDROLYZABLE SILANE HAVING HALOGEN-CONTAINING CARBOXYLIC ACID AMIDE GROUP | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-11-09 | — | — | US | disclosed |
| US-9790384-B2 | Ink composition for writing instrument and coloring material | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2017-10-17 | — | — | US | disclosed |
| EP-3229075-A1 | PHOTORESIST COMPOSITION, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING RESIST PATTERN | JSR Corporation (JP) | 2017-10-11 | — | — | EP | disclosed |
| EP-3222688-A1 | FILM-FORMING COMPOSITION CONTAINING CROSSLINKABLE REACTIVE SILICONE | Nissan Chemical Industries, Ltd. (JP) | 2017-09-27 | — | — | EP | disclosed |
| US-20170269476-A1 | PHOTORESIST COMPOSITION, PRODUCTION METHOD OF PHOTORESIST COMPOSITION, AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-09-21 | — | — | US | disclosed |
| US-20170271151-A1 | COATING COMPOSITION FOR PATTERN REVERSAL ON SOC PATTERN | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-09-21 | — | — | US | disclosed |
| US-9760006-B2 | Silicon-containing resist underlayer film forming composition having urea group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-20170255096-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-09-07 | — | — | US | disclosed |
| US-9753369-B2 | Polymer-containing developer | NISSAN CHEMICAL IDUSTRIES, LTD. (JP) | 2017-09-05 | — | — | US | disclosed |
| US-9738746-B2 | Composition for pattern formation, pattern-forming method, and block copolymer | JSR CORPORATION (JP) | 2017-08-22 | — | — | US | disclosed |
| US-9725618-B2 | Metal-containing resist underlayer film-forming composition containing polyacid | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-08-08 | — | — | US | disclosed |
| US-9718950-B2 | Directed self-assembly composition for pattern formation and pattern-forming method | JSR CORPORATION (JP) | 2017-08-01 | — | — | US | disclosed |
| US-9720322-B2 | Photoresist composition, compound, and production method thereof | JSR CORPORATION (JP) | 2017-08-01 | — | — | US | disclosed |
| EP-2154708-B1 | High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device | SHINETSU CHEMICAL CO (JP) | 2017-07-26 | — | — | EP | disclosed |
| US-9703195-B2 | Radiation-sensitive resin composition, resist pattern-forming method, polymer, and method for producing compound | JSR CORPORATION (JP) | 2017-07-11 | — | — | US | disclosed |
| US-20170168397-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING HALOGENATED SULFONYLALKYL GROUP | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-06-15 | — | — | US | disclosed |
| US-20170153549-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING ORGANIC GROUP HAVING ALIPHATIC POLYCYCLIC STRUCTURE | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-06-01 | — | — | US | disclosed |
| US-20170146906-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING PHENYL GROUP-CONTAINING CHROMOPHORE | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-05-25 | — | — | US | disclosed |
| US-20170131634-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-05-11 | — | — | US | disclosed |
| US-20170131632-A1 | ACID DIFFUSION CONTROL AGENT, RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD | JSR CORPORATION (JP) | 2017-05-11 | — | — | US | disclosed |
| US-9627217-B2 | Silicon-containing EUV resist underlayer film-forming composition including additive | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-04-18 | — | — | US | disclosed |
| EP-3053571-B1 | Process for the preparation of a particulate dental filler composition | DENTSPLY DETREY GMBH (DE) | 2017-03-22 | — | — | EP | disclosed |
| US-9594303-B2 | Resist pattern-forming method and photoresist composition | JSR CORPORATION (JP) | 2017-03-14 | — | — | US | disclosed |
| US-9588423-B2 | Acid diffusion control agent, radiation-sensitive resin composition, resist pattern-forming method, compound, and production method | JSR CORPORATION (JP) | 2017-03-07 | — | — | US | disclosed |
| US-20170059992-A1 | RESIST PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2017-03-02 | — | — | US | disclosed |
| US-20170052449-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| EP-3133444-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND | OSAKA UNIVERSITY (JP) | 2017-02-22 | — | — | EP | disclosed |
| US-20170038679-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID GENERATOR AND COMPOUND | JSR CORPORATION (JP) | 2017-02-09 | — | — | US | disclosed |
| US-9557641-B2 | Photoresist composition, resist pattern-forming method, acid diffusion control agent, and compound | JSR CORPORATION (JP) | 2017-01-31 | — | — | US | disclosed |
| US-9534135-B2 | Composition for pattern formation, and pattern-forming method | JSR CORPORATION (JP) | 2017-01-03 | — | — | US | disclosed |
| US-9529259-B2 | Radiation-sensitive resin composition, resist pattern-forming method, acid diffusion control agent, compound, and method for producing compound | JSR CORPORATION (JP) | 2016-12-27 | — | — | US | disclosed |
| US-20160370700-A1 | PHOTORESIST COMPOSITION, COMPOUND, AND PRODUCTION METHOD THEREOF | JSR CORPORATION (JP) | 2016-12-22 | — | — | US | disclosed |
| US-9524871-B2 | Silicon-containing resist underlayer film-forming composition having sulfone structure | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2016-12-20 | — | — | US | disclosed |
| US-9523911-B2 | Radiation-sensitive resin composition, resist pattern-forming method, acid generator and compound | JSR CORPORATION (JP) | 2016-12-20 | — | — | US | disclosed |
| US-20160354744-A1 | DISPERSING AGENT, A METHOD FOR MANUFACTURING A DISPERSING AGENT, AN INK, AND A METHOD FOR FORMING AN ELECTRICALLY CONDUCTIVE PATTERN | RICOH COMPANY, LTD. (JP) | 2016-12-08 | — | — | US | disclosed |
| US-20160349616-A1 | SEMICONDUCTOR DEVICE PRODUCTION COMPOSITION AND PATTERN FORMATION METHOD | JSR CORPORATION (JP) | 2016-12-01 | — | — | US | disclosed |
| EP-2154710-B1 | Substrate joining method and 3-D semiconductor device | SHINETSU CHEMICAL CO (JP) | 2016-11-16 | — | — | EP | disclosed |
| US-9494862-B2 | Resist underlayer film forming composition containing silicon having sulfone structure and amine structure | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2016-11-15 | — | — | US | disclosed |
| US-20160320705-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-11-03 | — | — | US | disclosed |
| US-9477149-B2 | Photoresist composition, compound, and production method thereof | JSR CORPORATION (JP) | 2016-10-25 | — | — | US | disclosed |
| CN-106009854-A | Waterproof building coating with good toughness | 芜湖县双宝建材有限公司 | 2016-10-12 | — | — | CN | disclosed |
| CN-106010077-A | Building exterior wall coating with good waterproof property and cohesiveness | 芜湖县双宝建材有限公司 | 2016-10-12 | — | — | CN | disclosed |
| CN-106010077-A | Building exterior wall coating with good waterproof property and cohesiveness | 芜湖县双宝建材有限公司 | 2016-10-12 | — | — | CN | disclosed |
| CN-106009854-A | Waterproof building coating with good toughness | 芜湖县双宝建材有限公司 | 2016-10-12 | — | — | CN | disclosed |
| US-9465291-B2 | Radiation-sensitive resin composition, polymer, compound, and method for producing compound | JSR CORPORATION (JP) | 2016-10-11 | — | — | US | disclosed |
| US-20160291462-A1 | PATTERN-FORMING METHOD AND COMPOSITION FOR RESIST PATTERN-REFINEMENT | JSR CORPORATION (JP) | 2016-10-06 | — | — | US | disclosed |
| US-20160293408-A1 | COMPOSITION FOR PATTERN FORMATION, PATTERN-FORMING METHOD, AND BLOCK COPOLYMER | JSR CORPORATION (JP) | 2016-10-06 | — | — | US | disclosed |
| US-9459532-B2 | Radiation-sensitive resin composition, polymer and compound | JSR CORPORATION (JP) | 2016-10-04 | — | — | US | disclosed |
| US-9434609-B2 | Method for forming pattern, and polysiloxane composition | JSR CORPORATION (JP) | 2016-09-06 | — | — | US | disclosed |
| US-20160251546-A1 | METAL-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYACID | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2016-09-01 | — | — | US | disclosed |
| US-20160252818-A9 | PRODUCTION METHOD OF SEMICONDUCTOR ELEMENT, AND ION IMPLANTATION METHOD | JSR CORPORATION (JP) | 2016-09-01 | — | — | US | disclosed |
| WO-2016124679-A1 | PROCESS FOR THE PREPARATION OF A PARTICULATE DENTAL FILLER COMPOSITION | DENTSPLY DETREY GMBH (DE) | 2016-08-11 | — | — | WO | disclosed |
| EP-3053571-A1 | Process for the preparation of a particulate dental filler composition | Dentsply DeTrey GmbH (DE) | 2016-08-10 | — | — | EP | disclosed |
| US-20160222248-A1 | FORMING UNDERLAYER FILM OF SELF-ASSEMBLED FILM INCLUDING ALIPHATIC POLYCYCLIC STRUCTURE | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2016-08-04 | — | — | US | disclosed |
| US-20160215231-A1 | METHOD FOR PRODUCING DIALKYL POLYSULFIDE, DIALKYL POLYSULFIDE, EXTREME-PRESSURE ADDITIVE AND LUBRICATING FLUID COMPOSITION | DIC CORPORATION (JP) | 2016-07-28 | — | — | US | disclosed |
| US-20160202608-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-07-14 | — | — | US | disclosed |
| EP-1500523-B1 | WRITING INK ACCOMMODATING TUBE | MITSUBISHI PENCIL CO (JP) | 2016-07-06 | — | — | EP | disclosed |
| US-20160187777-A1 | COMPOSITION AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-06-30 | — | — | US | disclosed |
| EP-3034492-A1 | METHOD FOR PRODUCING DIALKYL POLYSULFIDE, DIALKYL POLYSULFIDE, EXTREME-PRESSURE ADDITIVE AND LUBRICATING FLUID COMPOSITION | DIC Corporation (JP) | 2016-06-22 | — | — | EP | disclosed |
| US-9354523-B2 | Composition for resist pattern-refinement, and fine pattern-forming method | JSR CORPORATION (JP) | 2016-05-31 | — | — | US | disclosed |
| US-20160131978-A1 | PATTERN FORMING METHOD | JSR CORPORATION (JP) | 2016-05-12 | — | — | US | disclosed |
| US-9335630-B2 | Pattern-forming method, and radiation-sensitive composition | JSR CORPORATION (JP) | 2016-05-10 | — | — | US | disclosed |
| US-9337052-B2 | Silicon-containing EUV resist underlayer film forming composition | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2016-05-10 | — | — | US | disclosed |
| US-9329478-B2 | Polysiloxane composition and pattern-forming method | JSR CORPORATION (JP) | 2016-05-03 | — | — | US | disclosed |
| US-9329474-B2 | Photoresist composition and resist pattern-forming method | JSR CORPORATION (JP) | 2016-05-03 | — | — | US | disclosed |
| US-9323146-B2 | Photoresist composition, resist pattern-forming method, compound, acid generating agent, and photodegradable base | JSR CORPORATION (JP) | 2016-04-26 | — | — | US | disclosed |
| US-20160097016-A1 | DIALKYL POLYSULFIDE, PROCESS FOR PREPARING DIALKYL POLYSULFIDE, EXTREME PRESSURE ADDITIVE, AND LUBRICATING FLUID COMPOSITION | DIC CORPORATION (JP) | 2016-04-07 | — | — | US | disclosed |
| US-20160097978-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-04-07 | — | — | US | disclosed |
| US-9304393-B2 | Radiation-sensitive resin composition and compound | JSR CORPORATION (JP) | 2016-04-05 | — | — | US | disclosed |
| EP-3000806-A1 | DIALKYL POLYSULFIDE, PROCESS FOR PREPARING DIALKYL POLYSULFIDE, EXTREME-PRESSURE ADDITIVE AND LUBRICATING FLUID COMPOSITION | DIC Corporation (JP) | 2016-03-30 | — | — | EP | disclosed |
| US-9298090-B2 | — | — | 2016-03-29 | — | — | US | disclosed |
| US-9290623-B2 | Composition for forming silicon-containing resist underlayer film having cyclic diester group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2016-03-22 | — | — | US | disclosed |
| US-9291900-B2 | Composition for forming resist underlayer film, containing silicon that bears diketone-structure-containing organic group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2016-03-22 | — | — | US | disclosed |
| EP-2995659-A1 | INK COMPOSITION FOR WRITING UTENSIL AND COLORING MATERIAL | Mitsubishi Pencil Co., Ltd. (JP) | 2016-03-16 | — | — | EP | disclosed |
| US-20160068694-A1 | INK COMPOSITION FOR WRITING INSTRUMENT AND COLORING MATERIAL | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2016-03-10 | — | — | US | disclosed |
| US-9268219-B2 | Photoresist composition and resist pattern-forming method | JSR CORPORATION (JP) | 2016-02-23 | — | — | US | disclosed |
| US-9257576-B2 | Amino acid generator and polysiloxane composition containing the same | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2016-02-09 | — | — | US | disclosed |
| US-20160027946-A1 | OPTICAL DEVICE | JSR CORPORATION (JP) | 2016-01-28 | — | — | US | disclosed |
| US-20160011513-A1 | COMPOSITION FOR FORMING FINE RESIST PATTERN, AND FINE PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-01-14 | — | — | US | disclosed |
| EP-2182405-B1 | LIQUID CRYSTAL ALIGNING AGENT, METHOD FOR PRODUCING LIQUID CRYSTAL ALIGNMENT FILM, AND LIQUID CRYSTAL DISPLAY DEVICE | JSR CORP (JP) | 2016-01-13 | — | — | EP | disclosed |
| US-9233840-B2 | Method for improving self-assembled polymer features | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2016-01-12 | — | — | US | disclosed |
| US-9229323-B2 | Pattern-forming method | JSR CORPORATION (JP) | 2016-01-05 | — | — | US | disclosed |
| US-9223207-B2 | Resist pattern-forming method, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2015-12-29 | — | — | US | disclosed |
| US-9217921-B2 | Resist underlayer film forming composition containing silicon having sulfide bond | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-12-22 | — | — | US | disclosed |
| US-20150364332-A1 | INORGANIC FILM-FORMING COMPOSITION FOR MULTILAYER RESIST PROCESSES, AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2015-12-17 | — | — | US | disclosed |
| US-20150355550-A1 | PRODUCTION METHOD OF SEMICONDUCTOR ELEMENT, AND ION IMPLANTATION METHOD | JSR CORPORATION (JP) | 2015-12-10 | — | — | US | disclosed |
| US-20150355539-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID DIFFUSION CONTROL AGENT, COMPOUND, AND METHOD FOR PRODUCING COMPOUND | JSR CORPORATION (JP) | 2015-12-10 | — | — | US | disclosed |
| US-9196484-B2 | Silicon-containing composition for formation of resist underlayer film, which contains organic group containing protected aliphatic alcohol | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-11-24 | — | — | US | disclosed |
| US-9188858-B2 | Radiation-sensitive resin composition, method for forming resist pattern, acid generating agent and compound | JSR CORPORATION (JP) | 2015-11-17 | — | — | US | disclosed |
| US-20150322219-A1 | BOTTOM LAYER FILM-FORMATION COMPOSITION OF SELF-ORGANIZING FILM CONTAINING POLYCYCLIC ORGANIC VINYL COMPOUND | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-11-12 | — | — | US | disclosed |
| US-20150323866-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, POLYMER, AND METHOD FOR PRODUCING COMPOUND | JSR CORPORATION (JP) | 2015-11-12 | — | — | US | disclosed |
| US-20150322212-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CYCLIC DIESTER GROUP | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-11-12 | — | — | US | disclosed |
| US-20150316849-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ESTER GROUP | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-11-05 | — | — | US | disclosed |
| US-20150315402-A1 | BOTTOM LAYER FILM-FORMING COMPOSITION OF SELF-ORGANIZING FILM CONTAINING STYRENE STRUCTURE | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-11-05 | — | — | US | disclosed |
| US-20150309406-A9 | PHOTORESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID DIFFUSION CONTROL AGENT, AND COMPOUND | JSR CORPORATION (JP) | 2015-10-29 | — | — | US | disclosed |
| EP-2937385-A1 | BOTTOM LAYER FILM-FORMING COMPOSITION OF SELF-ORGANIZING FILM CONTAINING STYRENE STRUCTURE | Nissan Chemical Industries, Ltd. (JP) | 2015-10-28 | — | — | EP | disclosed |
| EP-2937391-A1 | BOTTOM LAYER FILM-FORMATION COMPOSITION OF SELF-ORGANIZING FILM CONTAINING POLYCYCLIC ORGANIC VINYL COMPOUND | Nissan Chemical Industries, Ltd. (JP) | 2015-10-28 | — | — | EP | disclosed |
| US-9170493-B2 | Resist underlayer film-forming composition, pattern-forming method and resist underlayer film | JSR CORPORATION (JP) | 2015-10-27 | — | — | US | disclosed |
| US-9170488-B2 | Resist pattern-forming method, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2015-10-27 | — | — | US | disclosed |
| US-9170492-B2 | Silicon-containing film-forming composition, silicon-containing film, and pattern forming method | JSR CORPORATION (JP) | 2015-10-27 | — | — | US | disclosed |
| US-9164387-B2 | Pattern-forming method, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2015-10-20 | — | — | US | disclosed |
| US-9158196-B2 | Radiation-sensitive resin composition and pattern-forming method | JSR CORPORATION (JP) | 2015-10-13 | — | — | US | disclosed |
| US-20150284539-A1 | COMPOSITION FOR FILM FORMATION, AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2015-10-08 | — | — | US | disclosed |
| CN-103740229-B | A kind of wear-resistant paint | ANHUI PROVINCE JINDUN PAINT CO., LTD. (CN) | 2015-10-07 | — | — | CN | disclosed |
| CN-103740229-B | A kind of wear-resistant paint | ANHUI PROVINCE JINDUN PAINT CO., LTD. (CN) | 2015-10-07 | — | — | CN | disclosed |
| US-9152044-B2 | — | — | 2015-10-06 | — | — | US | disclosed |
| US-9146466-B2 | Resist composition, resist pattern-forming method, and resist solvent | JSR CORPORATION (JP) | 2015-09-29 | — | — | US | disclosed |
| CN-104927592-A | Modified polyester resin coating for ships | WUHU SHUANGBAO BUILDING MATERIAL CO LTD | 2015-09-23 | — | — | CN | disclosed |
| US-9140985-B2 | — | — | 2015-09-22 | — | — | US | disclosed |
| US-20150252216-A1 | PATTERN-FORMING METHOD AND DIRECTED SELF-ASSEMBLING COMPOSITION | JSR CORPORATION (JP) | 2015-09-10 | — | — | US | disclosed |
| US-20150253670-A1 | PATTERN-FORMING METHOD AND COMPOSITION | JSR CORPORATION (JP) | 2015-09-10 | — | — | US | disclosed |
| EP-2916170-A1 | ESTER-GROUP-CONTAINING COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM | Nissan Chemical Industries, Ltd. (JP) | 2015-09-09 | — | — | EP | disclosed |
| US-9127161-B2 | Method for stabilizing silanol-group-containing polysiloxane solution, method for producing stable silanol-group-containing polysiloxane solution, and stable silanol-group-containing polysiloxane solution | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-09-08 | — | — | US | disclosed |
| US-20150249012-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON CONTAINING CYCLIC ORGANIC GROUP HAVING HETERO ATOM | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-09-03 | — | — | US | disclosed |
| US-9122163-B2 | — | — | 2015-09-01 | — | — | US | disclosed |
| US-20150225601-A1 | COMPOSITION FOR PATTERN FORMATION, AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2015-08-13 | — | — | US | disclosed |
| US-20150210829-A1 | SILICON-CONTAINING EUV RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING ONIUM SULFONATE | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-07-30 | — | — | US | disclosed |
| US-9093279-B2 | Thin film forming composition for lithography containing titanium and silicon | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-07-28 | — | — | US | disclosed |
| US-20150177616-A1 | PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE COMPOSITION | JSR CORPORATION (JP) | 2015-06-25 | — | — | US | disclosed |
| US-20150159045-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING SULFONE STRUCTURE AND AMINE STRUCTURE | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-06-11 | — | — | US | disclosed |
| US-20150160556-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2015-06-11 | — | — | US | disclosed |
| EP-2881794-A1 | COMPOSITION FOR FORMING UNDERLAYER FILM FOR SILICON-CONTAINING EUV RESIST AND CONTAINING ONIUM SULFONATE | Nissan Chemical Industries, Ltd. (JP) | 2015-06-10 | — | — | EP | disclosed |
| US-9052600-B2 | Method for forming resist pattern and composition for forming protective film | JSR CORPORATION (JP) | 2015-06-09 | — | — | US | disclosed |
| US-9046769-B2 | Pattern-forming method, and composition for forming resist underlayer film | JSR CORPORATION (JP) | 2015-06-02 | — | — | US | disclosed |
| US-9046765-B2 | Resist pattern-forming method, resist pattern-forming radiation-sensitive resin composition, and resist film | JSR CORPORATION (JP) | 2015-06-02 | — | — | US | disclosed |
| US-9034559-B2 | Pattern-forming method, and radiation-sensitive composition | JSR CORPORATION (JP) | 2015-05-19 | — | — | US | disclosed |
| US-20150133356-A1 | PHOTORESIST AND POST ETCH RESIDUE CLEANING SOLUTION | DYNALOY, LLC (US) | 2015-05-14 | — | — | US | disclosed |
| US-9023588-B2 | Resist underlayer film forming composition containing silicon having nitrogen-containing ring | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-05-05 | — | — | US | disclosed |
| US-20150118396-A1 | UNDERLAYER FILM-FORMING COMPOSITION FOR SELF-ASSEMBLED FILMS | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-04-30 | — | — | US | disclosed |
| US-20150099070-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT | NISSAN CHEMICAL IND LTD (JP) | 2015-04-09 | — | — | US | disclosed |
| US-8993223-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2015-03-31 | — | — | US | disclosed |
| US-8987181-B2 | Photoresist and post etch residue cleaning solution | DYNALOY, LLC (US) | 2015-03-24 | — | — | US | disclosed |
| US-20150079792-A1 | SILICON-CONTAINING EUV RESIST UNDERLAYER FILM-FORMING COMPOSITION INCLUDING ADDITIVE | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-03-19 | — | — | US | disclosed |
| US-20150079520-A1 | ACID DIFFUSION CONTROL AGENT, RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD | JSR CORPORATION (JP) | 2015-03-19 | — | — | US | disclosed |
| EP-2848662-A2 | Dispersant and method for producing same, ink, and method for forming electro-conductive pattern | Ricoh Company, Ltd. (JP) | 2015-03-18 | — | — | EP | disclosed |
| US-8980539-B2 | Developer | JSR CORPORATION (JP) | 2015-03-17 | — | — | US | disclosed |
| US-20150069306-A1 | DISPERSANT AND METHOD FOR PRODUCING SAME, INK, AND METHOD FOR FORMING ELECTRO-CONDUCTIVE PATTERN | RICOH COMPANY, LTD. (JP) | 2015-03-12 | — | — | US | disclosed |
| US-8968586-B2 | Pattern-forming method | JSR CORPORATION (JP) | 2015-03-03 | — | — | US | disclosed |
| US-20150048046-A1 | METHOD FOR FORMING PATTERN, AND POLYSILOXANE COMPOSITION | JSR CORPORATION (JP) | 2015-02-19 | — | — | US | disclosed |
| US-20150050600-A9 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2015-02-19 | — | — | US | disclosed |
| US-8956807-B2 | Method for forming resist pattern, and composition for forming resist underlayer film | JSR CORPORATION (JP) | 2015-02-17 | — | — | US | disclosed |
| US-20150040797-A1 | INK COMPOSITION FOR WATER-BASED BALLPOINT PEN | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2015-02-12 | — | — | US | disclosed |
| EP-2832807-A1 | UNDERLAYER FILM FORMING COMPOSITION FOR SELF-ASSEMBLED FILMS | Nissan Chemical Industries, Ltd. (JP) | 2015-02-04 | — | — | EP | disclosed |
| EP-2832806-A1 | WATER-BASED INK COMPOSITION FOR BALLPOINT PEN | Mitsubishi Pencil Company, Limited (JP) | 2015-02-04 | — | — | EP | disclosed |
| US-20150010866-A1 | RESIST PATTERN-FORMING METHOD AND PHOTORESIST COMPOSITION | JSR CORPORATION (JP) | 2015-01-08 | — | — | US | disclosed |
| US-8927200-B2 | Double patterning method | JSR CORPORATION (JP) | 2015-01-06 | — | — | US | disclosed |
| US-8927201-B2 | Multilayer resist process pattern-forming method and multilayer resist process inorganic film-forming composition | JSR CORPORATION (JP) | 2015-01-06 | — | — | US | disclosed |
| US-20150004544-A1 | PHOTORESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID DIFFUSION CONTROL AGENT, AND COMPOUND | JSR CORPORATION (JP) | 2015-01-01 | — | — | US | disclosed |
| US-20150004545-A1 | PHOTORESIST COMPOSITION, COMPOUND, AND PRODUCTION METHOD THEREOF | JSR CORPORATION (JP) | 2015-01-01 | — | — | US | disclosed |
| US-20140377957-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION FOR SOLVENT DEVELOPMENT | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-12-25 | — | — | US | disclosed |
| US-20140371466-A1 | PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2014-12-18 | — | — | US | disclosed |
| US-20140363766-A9 | RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2014-12-11 | — | — | US | disclosed |
| US-20140363769-A1 | PHOTORESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, ACID GENERATING AGENT, AND PHOTODEGRADABLE BASE | JSR CORPORATION (JP) | 2014-12-11 | — | — | US | disclosed |
| US-8900358-B2 | Ink composition for water-based ballpoint pen | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2014-12-02 | — | — | US | disclosed |
| US-20140342288-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID GENERATOR AND COMPOUND | JSR CORPORATION (JP) | 2014-11-20 | — | — | US | disclosed |
| US-8877425-B2 | Silicon-containing resist underlayer film forming composition having fluorine-based additive | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-11-04 | — | — | US | disclosed |
| US-8864894-B2 | Resist underlayer film forming composition containing silicone having onium group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-10-21 | — | — | US | disclosed |
| US-20140309317-A1 | METHOD FOR STABILIZING SILANOL-GROUP-CONTAINING POLYSILOXANE SOLUTION, METHOD FOR PRODUCING STABLE SILANOL-GROUP-CONTAINING POLYSILOXANE SOLUTION, AND STABLE SILANOL-GROUP-CONTAINING POLYSILOXANE SOLUTION | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-10-16 | — | — | US | disclosed |
| US-8859191-B2 | Pattern-forming method, and composition for forming resist underlayer film | JSR CORPORATION (JP) | 2014-10-14 | — | — | US | disclosed |
| US-20140302438-A1 | RESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, AND RESIST SOLVENT | JSR CORPORATION (JP) | 2014-10-09 | — | — | US | disclosed |
| US-20140295350-A1 | RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORP (JP) | 2014-10-02 | — | — | US | disclosed |
| US-20140272177-A1 | DISPERSING AGENT, A METHOD FOR MANUFACTURING A DISPERSING AGENT, AN INK, AND A METHOD FOR FORMING AN ELECTRICALLY CONDUCTIVE PATTERN | RICOH COMPANY, LTD. (JP) | 2014-09-18 | — | — | US | disclosed |
| EP-2778191-A1 | METHOD FOR STABILIZING SILANOL-CONTAINING POLYSILOXANE SOLUTION, METHOD FOR PRODUCING STABLE SILANOL-CONTAINING POLYSILOXANE SOLUTION, AND STABLE SILANOL-CONTAINING POLYSILOXANE SOLUTION | Nissan Chemical Industries, Ltd. (JP) | 2014-09-17 | — | — | EP | disclosed |
| US-8835093-B2 | Resist underlayer film forming composition containing silicon having anion group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-09-16 | — | — | US | disclosed |
| US-20140255854-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2014-09-11 | — | — | US | disclosed |
| US-8828879-B2 | Silicon-containing composition having sulfonamide group for forming resist underlayer film | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-09-09 | — | — | US | disclosed |
| US-8822140-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2014-09-02 | — | — | US | disclosed |
| US-8815493-B2 | Resist pattern-forming method, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2014-08-26 | — | — | US | disclosed |
| US-8815494-B2 | Resist underlayer film forming composition containing silicon having anion group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-08-26 | — | — | US | disclosed |
| US-20140232018-A1 | SILICON-CONTAINING EUV RESIST UNDERLAYER FILM FORMING COMPOSITION | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-08-21 | — | — | US | disclosed |
| EP-2031029-B1 | Oil-based ink composition for ballpoint pen using oil-based ink | MITSUBISHI PENCIL CO (JP) | 2014-08-20 | — | — | EP | disclosed |
| US-8809458-B2 | Polysiloxane composition | KANEKA CORPORATION (JP) | 2014-08-19 | — | — | US | disclosed |
| EP-2765457-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING EUV RESIST UNDERLAYER FILM | Nissan Chemical Industries, Ltd. (JP) | 2014-08-13 | — | — | EP | disclosed |
| US-8802350-B2 | Photoresist composition, resist-pattern forming method, polymer, and compound | JSR CORPORATION (JP) | 2014-08-12 | — | — | US | disclosed |
| US-8795954-B2 | Resist pattern-forming method, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2014-08-05 | — | — | US | disclosed |
| US-20140186771-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, COMPOUND, AND METHOD FOR PRODUCING COMPOUND | JSR CORPORATION (JP) | 2014-07-03 | — | — | US | disclosed |
| US-8765355-B2 | Radiation sensitive resin composition, method for forming a pattern, polymer and compound | JSR CORPORATION (JP) | 2014-07-01 | — | — | US | disclosed |
| US-20140178825-A1 | DEVELOPER | JSR CORPORATION (JP) | 2014-06-26 | — | — | US | disclosed |
| US-20140170855-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING SULFONE STRUCTURE | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-06-19 | — | — | US | disclosed |
| EP-2738605-A2 | Developer for resist pattern-forming method | JSR Corporation (JP) | 2014-06-04 | — | — | EP | disclosed |
| EP-2735904-A1 | THIN FILM FORMATION COMPOSITION FOR LITHOGRAPHY WHICH CONTAINS TITANIUM AND SILICON | Nissan Chemical Industries, Ltd. (JP) | 2014-05-28 | — | — | EP | disclosed |
| US-20140134544-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2014-05-15 | — | — | US | disclosed |
| US-20140120730-A1 | THIN FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING TITANIUM AND SILICON | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-05-01 | — | — | US | disclosed |
| EP-2479615-B1 | SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM | NISSAN CHEMICAL IND LTD (JP) | 2014-04-23 | — | — | EP | disclosed |
| CN-103740229-A | Novel wear-resisting coating | ANHUI JINDUN PAINT CO LTD | 2014-04-23 | — | — | CN | disclosed |
| CN-103740229-A | Novel wear-resisting coating | ANHUI JINDUN PAINT CO LTD | 2014-04-23 | — | — | CN | disclosed |
| US-8703395-B2 | Pattern-forming method | JSR CORPORATION (JP) | 2014-04-22 | — | — | US | disclosed |
| US-8703401-B2 | Method for forming pattern and developer | JSR CORPORATION (JP) | 2014-04-22 | — | — | US | disclosed |
| US-20140080066-A1 | DOUBLE PATTERNING METHOD | JSR CORPORATION (JP) | 2014-03-20 | — | — | US | disclosed |
| US-8669042-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2014-03-11 | — | — | US | disclosed |
| EP-2530525-B1 | Method for forming pattern and developer | JSR CORP (JP) | 2014-02-26 | — | — | EP | disclosed |
| US-8647810-B2 | Resist lower layer film-forming composition, polymer, resist lower layer film, pattern-forming method, and method of producing semiconductor device | JSR CORPORATION (JP) | 2014-02-11 | — | — | US | disclosed |
| US-20140038415-A1 | POLYMER-CONTAINING DEVELOPER | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-02-06 | — | — | US | disclosed |
| US-20140030660-A1 | MULTILAYER RESIST PROCESS PATTERN-FORMING METHOD AND MULTILAYER RESIST PROCESS INORGANIC FILM-FORMING COMPOSITION | JSR CORPORATION (JP) | 2014-01-30 | — | — | US | disclosed |
| EP-2690497-A1 | POLYMER-CONTAINING DEVELOPER | Nissan Chemical Industries, Ltd. (JP) | 2014-01-29 | — | — | EP | disclosed |
| US-20140023968-A1 | RESIST PATTERN-FORMING METHOD, RESIST PATTERN-FORMING RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM | JSR CORPORATION (JP) | 2014-01-23 | — | — | US | disclosed |
| US-20130344249-A1 | DIRECTED SELF-ASSEMBLY COMPOSITION FOR PATTERN FORMATION AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-12-26 | — | — | US | disclosed |
| US-20130341304-A1 | RESIST UNDERLAYER FILM-FORMING COMPOSITION, PATTERN-FORMING METHOD AND RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2013-12-26 | — | — | US | disclosed |
| US-20130340649-A1 | INK COMPOSITION FOR WATER-BASED BALLPOINT PEN | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2013-12-26 | — | — | US | disclosed |
| US-20130337385-A1 | NEGATIVE PATTERN-FORMING METHOD AND PHOTORESIST COMPOSITION | JSR CORPORATION (JP) | 2013-12-19 | — | — | US | disclosed |
| US-8609321-B2 | Radiation-sensitive resin composition, polymer and compound | JSP CORPORATION (JP) | 2013-12-17 | — | — | US | disclosed |
| US-8603588-B2 | Composition and method for production thereof, porous material and method for production thereof, interlayer insulating film, semiconductor material, semiconductor device, and low-refractive-index surface protection film | MITSUI CHEMICALS, INC. (JP) | 2013-12-10 | — | — | US | disclosed |
| US-20130323653-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-12-05 | — | — | US | disclosed |
| EP-2669737-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILMS, CONTAINING SILICON THAT BEARS DIKETONE-STRUCTURE-CONTAINING ORGANIC GROUP | Nissan Chemical Industries, Ltd. (JP) | 2013-12-04 | — | — | EP | disclosed |
| US-20130316287-A1 | PHOTORESIST COMPOSITION | JSR CORPORATION (JP) | 2013-11-28 | — | — | US | disclosed |
| US-20130313669-A1 | AMINO ACID GENERATOR AND POLYSILOXANE COMPOSITION CONTAINING THE SAME | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2013-11-28 | — | — | US | disclosed |
| US-20130302991-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, CONTAINING SILICON THAT BEARS DIKETONE-STRUCTURE-CONTAINING ORGANIC GROUP | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2013-11-14 | — | — | US | disclosed |
| US-20130295506-A1 | RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORP (JP) | 2013-11-07 | — | — | US | disclosed |
| EP-2196854-B1 | COMPOSITION CONTAINING POLYMER HAVING NITROGENOUS SILYL GROUP FOR FORMING RESIST UNDERLAYER FILM | NISSAN CHEMICAL IND LTD (JP) | 2013-11-06 | — | — | EP | disclosed |
| US-20130288179-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND | JSR CORPORATION (JP) | 2013-10-31 | — | — | US | disclosed |
| US-20130280657-A1 | PHOTORESIST COMPOSITION AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-10-24 | — | — | US | disclosed |
| EP-2182406-B1 | LIQUID CRYSTAL ALIGNING AGENT, METHOD FOR FORMING LIQUID CRYSTAL ALIGNMENT FILM, AND LIQUID CRYSTAL DISPLAY DEVICE | JSR CORP (JP) | 2013-10-16 | — | — | EP | disclosed |
| US-20130260315-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN-FORMING METHOD, POLYMER, AND COMPOUND | JSR CORPORATION (JP) | 2013-10-03 | — | — | US | disclosed |
| EP-1867687-B9 | PRECURSOR COMPOSITION FOR POROUS MEMBRANE AND PROCESS FOR PREPARATION THEREOF, POROUS MEMBRANE AND PROCESS FOR PRODUCTION THEREOF, AND SEMICONDUCTOR DEVICE | ULVAC INC (JP) | 2013-09-18 | — | — | EP | disclosed |
| US-8530146-B2 | Method for forming resist pattern | JSR CORPORATION (JP) | 2013-09-10 | — | — | US | disclosed |
| US-20130230804-A1 | PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE COMPOSITION | JSR CORPORATION (JP) | 2013-09-05 | — | — | US | disclosed |
| US-20130230803-A1 | RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2013-09-05 | — | — | US | disclosed |
| US-20130224957-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION HAVING FLUORINE-BASED ADDITIVE | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20130224661-A1 | PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20130224666-A1 | RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20130216951-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND COMPOUND | JSR CORPORATION (JP) | 2013-08-22 | — | — | US | disclosed |
| WO-2013121797-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-08-22 | — | — | WO | disclosed |
| US-20130216948-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-08-22 | — | — | US | disclosed |
| US-20130206727-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-08-15 | — | — | US | disclosed |
| EP-2623558-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND | JSR Corporation (JP) | 2013-08-07 | — | — | EP | disclosed |
| US-8496849-B2 | Liquid crystal aligning agent, liquid crystal alignment film and liquid crystal display device | JSR CORPORATION (JP) | 2013-07-30 | — | — | US | disclosed |
| US-20130189621-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND COMPOUND | JSR CORPORATION (JP) | 2013-07-25 | — | — | US | disclosed |
| US-20130183830-A1 | SILICON-CONTAINING COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM, WHICH CONTAINS ORGANIC GROUP CONTAINING PROTECTED ALIPHATIC ALCOHOL | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2013-07-18 | — | — | US | disclosed |
| EP-2615497-A1 | RESIST PATTERN FORMING METHOD | JSR Corporation (JP) | 2013-07-17 | — | — | EP | disclosed |
| US-20130148205-A1 | METHOD OF PRODUCING ANTIREFLECTION FILM | CANON KABUSHIKI KAISHA (JP) | 2013-06-13 | — | — | US | disclosed |
| EP-1867687-B1 | PRECURSOR COMPOSITION FOR POROUS MEMBRANE AND PROCESS FOR PREPARATION THEREOF, POROUS MEMBRANE AND PROCESS FOR PRODUCTION THEREOF, AND SEMICONDUCTOR DEVICE | ULVAC INC (JP) | 2013-06-12 | — | — | EP | disclosed |
| EP-1746122-B1 | METHOD FOR FORMING ORGANIC SILICA FILM, ORGANIC SILICA FILM, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE | JSR CORP (JP) | 2013-06-12 | — | — | EP | disclosed |
| US-8450045-B2 | Pattern forming method | JSR CORPORATION (JP) | 2013-05-28 | — | — | US | disclosed |
| US-20130130179-A1 | POLYSILOXANE COMPOSITION AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-05-23 | — | — | US | disclosed |
| WO-2013070499-A1 | PHOTORESIST AND POST ETCH RESIDUE CLEANING SOLUTION | DYNALOY, LLC (US) | 2013-05-16 | — | — | WO | disclosed |
| US-20130116159-A1 | PHOTORESIST AND POST ETCH RESIDUE CLEANING SOLUTION | DYNALOY, LLC (US) | 2013-05-09 | — | — | US | disclosed |
| WO-2013061601-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-05-02 | — | — | WO | disclosed |
| US-20130107235-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-05-02 | — | — | US | disclosed |
| US-20130101942-A1 | METHOD FOR FORMING RESIST PATTERN, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2013-04-25 | — | — | US | disclosed |
| EP-2584012-A1 | WATER-BASED INK COMPOSITION FOR BALLPOINT PEN | Mitsubishi Pencil Co., Ltd. (JP) | 2013-04-24 | — | — | EP | disclosed |
| US-8426112-B2 | Resist underlayer film forming composition containing polymer having nitrogen-containing silyl group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2013-04-23 | — | — | US | disclosed |
| US-20130087070-A1 | WATER-BASED INK COMPOSITION FOR BALLPOINT PEN | MITSUBISHI PENCIL COMPANY, LIMITED (JP) | 2013-04-11 | — | — | US | disclosed |
| US-20130089817-A1 | PHOTORESIST COMPOSITION AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-04-11 | — | — | US | disclosed |
| EP-1956057-B1 | OIL-BASED INK COMPOSITION FOR WRITING UTENSIL AND WRITING UTENSIL EMPLOYING THE SAME | MITSUBISHI PENCIL CO (JP) | 2013-04-03 | — | — | EP | disclosed |
| US-20130078579-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, ACID GENERATING AGENT AND COMPOUND | JSR CORPORATION (JP) | 2013-03-28 | — | — | US | disclosed |
| US-20130078571-A1 | PHOTORESIST COMPOSITION, METHOD FOR PRODUCING PHOTORESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2013-03-28 | — | — | US | disclosed |
| US-20130078814-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ANION GROUP | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2013-03-28 | — | — | US | disclosed |
| US-8404786-B2 | Polymer and process for producing the same, composition for forming insulating film, and insulating film and method of forming the same | JSR CORPORATION (JP) | 2013-03-26 | — | — | US | disclosed |
| EP-1705208-B1 | COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING SAME, SILICA INSULATING FILM, AND METHOD FOR FORMING SAME | JSR CORP (JP) | 2013-03-20 | — | — | EP | disclosed |
| US-8399068-B2 | Liquid crystal aligning agent, method of producing a liquid crystal alignment film and liquid crystal display device | JSR CORPORATION (JP) | 2013-03-19 | — | — | US | disclosed |
| US-8399093-B2 | Process for preparing redispersible surface-modified silicon dioxide particles | EVONIK DEGUSSA GMBH (DE) | 2013-03-19 | — | — | US | disclosed |
| US-8394457-B2 | Precursor composition for porous thin film, method for preparation of the precursor composition, porous thin film, method for preparation of the porous thin film, and semiconductor device | ULVAC, INC. (JP) | 2013-03-12 | — | — | US | disclosed |
| US-20130059252-A1 | METHOD FOR FORMING RESIST PATTERN AND COMPOSITION FOR FORMING PROTECTIVE FILM | JSR CORPORATION (JP) | 2013-03-07 | — | — | US | disclosed |
| US-8362199-B2 | Borazine-based resin, process for its production, borazine-based resin composition, insulating film and method for its formation | HITACHI CHEMICAL CO., LTD. (JP) | 2013-01-29 | — | — | US | disclosed |
| EP-2538276-A1 | COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM CONTAINING SILICON HAVING NITROGEN-CONTAINING RING | Nissan Chemical Industries, Ltd. (JP) | 2012-12-26 | — | — | EP | disclosed |
| US-20120315765-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2012-12-13 | — | — | US | disclosed |
| US-20120308938-A1 | METHOD FOR FORMING PATTERN AND DEVELOPER | JSR CORPORATION (JP) | 2012-12-06 | — | — | US | disclosed |
| EP-2530525-A1 | Method for forming pattern and developer | JSR Corporation (JP) | 2012-12-05 | — | — | EP | disclosed |
| EP-2256541-B1 | A LIQUID CRYSTAL ORIENTATING AGENT, A LIQUID CRYSTAL ORIENTATING FILM AND A LIQUID CRYSTAL DISPLAY ELEMENT | JSR CORP (JP) | 2012-12-05 | — | — | EP | disclosed |
| US-20120285929-A1 | PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2012-11-15 | — | — | US | disclosed |
| US-8304031-B2 | Liquid crystal aligning agent, liquid crystal alignment film and liquid crystal display device | JSR CORPORATION (JP) | 2012-11-06 | — | — | US | disclosed |
| US-20120276482-A1 | RADIATION SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING A PATTERN, POLYMER AND COMPOUND | JSR CORPORATION (JP) | 2012-11-01 | — | — | US | disclosed |
| EP-1705207-B1 | METHOD FOR PRODUCING POLYMER, POLYMER, COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING INSULATING FILM, AND INSULATING FILM | JSR CORP (JP) | 2012-10-24 | — | — | EP | disclosed |
| US-8288295-B2 | Manufacturing method of semiconductor device and semiconductor device produced therewith | ROHM CO., LTD. (JP) | 2012-10-16 | — | — | US | disclosed |
| US-20120258402-A1 | PHOTORESIST COMPOSITION, RESIST-PATTERN FORMING METHOD, POLYMER, AND COMPOUND | JSR CORPORATION (JP) | 2012-10-11 | — | — | US | disclosed |
| US-8277600-B2 | High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-02 | — | — | US | disclosed |
| US-8268403-B2 | Curing a coating of a siloxane compound and a carbosilane compound using ultraviolet radiation; a low relative dielectric constant, excellent chemical resistance, plasma resistance, mechanical strength | JSR CORPORATION (JP) | 2012-09-18 | — | — | US | disclosed |
| US-8257528-B2 | Substrate joining method and 3-D semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-09-04 | — | — | US | disclosed |
| US-8253251-B2 | Method for producing low-k film, semiconductor device, and method for manufacturing the same | ELPIDA MEMORY, INC. (JP) | 2012-08-28 | — | — | US | disclosed |
| US-20120202150-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2012-08-09 | — | — | US | disclosed |
| EP-2485090-A1 | Radiation-sensitive resin composition for forming resist pattern | JSR Corporation (JP) | 2012-08-08 | — | — | EP | disclosed |
| EP-2479615-A1 | SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM | Nissan Chemical Industries, Ltd. (JP) | 2012-07-25 | — | — | EP | disclosed |
| US-20120183908-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2012-07-19 | — | — | US | disclosed |
| US-20120178261-A1 | SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2012-07-12 | — | — | US | disclosed |
| US-8216649-B2 | Liquid crystal aligning agent, method of producing a liquid crystal alignment film and liquid crystal display device | JSR CORPORATION (JP) | 2012-07-10 | — | — | US | disclosed |
| US-8212338-B2 | Manufacturing method of semiconductor device and semiconductor device produced therewith | ULVAC (JP) | 2012-07-03 | — | — | US | disclosed |
| CN-102498440-A | Silicon-containing composition having sulfonamide group for forming resist underlayer film | NISSAN CHEMICAL IND LTD | 2012-06-13 | — | — | CN | disclosed |
| EP-2461350-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT LITHOGRAPHY | Nissan Chemical Industries, Ltd. (JP) | 2012-06-06 | — | — | EP | disclosed |
| US-20120128891-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR NANOIMPRINT | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2012-05-24 | — | — | US | disclosed |
| US-20120122036-A1 | PATTERN FORMING METHOD | JSR CORPORATION (JP) | 2012-05-17 | — | — | US | disclosed |
| US-8173348-B2 | Method of forming pattern and composition for forming of organic thin-film for use therein | JSR CORPORATION (JP) | 2012-05-08 | — | — | US | disclosed |
| US-20120103935-A1 | METHOD FOR IMPROVING SELF-ASSEMBLED POLYMER FEATURES | JSR CORPORATION (JP) | 2012-05-03 | — | — | US | disclosed |
| US-20120077124-A1 | RESIST LOWER LAYER FILM-FORMING COMPOSITION, POLYMER, RESIST LOWER LAYER FILM, PATTERN-FORMING METHOD, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE | JSR CORPORATION (JP) | 2012-03-29 | — | — | US | disclosed |
| EP-2243806-B1 | METHOD OF PRODUCING AN AQUEOUS DISPERSION OF SURFACE-TREATED CARBON BLACK | TOKAI CARBON KK (JP) | 2012-03-28 | — | — | EP | disclosed |
| US-20120070994-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING SULFIDE BOND | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2012-03-22 | — | — | US | disclosed |
| EP-1547975-B1 | METHOD FOR MODIFYING POROUS FILM, MODIFIED POROUS FILM AND USE OF SAME | MITSUI CHEMICALS INC (JP) | 2012-02-22 | — | — | EP | disclosed |
| US-8119324-B2 | Method of forming pattern, composition for forming upper-layer film, and composition for forming under-layer film | JSR CORPORATION (JP) | 2012-02-21 | — | — | US | disclosed |
| US-20110313122-A1 | BORAZINE-BASED RESIN, PROCESS FOR ITS PRODUCTION, BORAZINE-BASED RESIN COMPOSITION, INSULATING FILM AND METHOD FOR ITS FORMATION | MATSUTANI HIROSHI (JP) | 2011-12-22 | — | — | US | disclosed |
| US-20110287369-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ANION GROUP | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2011-11-24 | — | — | US | disclosed |
| EP-1544264-B1 | OIL-BASED INK COMPOSITION FOR BALLPOINT PEN USING OIL-BASED INK | MITSUBISHI PENCIL CO (JP) | 2011-11-02 | — | — | EP | disclosed |
| US-8048615-B2 | Silicon-containing resist underlayer coating forming composition for forming photo-crosslinking cured resist underlayer coating | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2011-11-01 | — | — | US | disclosed |
| US-20110253008-A1 | AQUEOUS DISPERSION OF SURFACE-TREATED CARBON BLACK AND METHOD OF PRODUCING THE SAME | TOKAI CARBON CO., LTD. | 2011-10-20 | — | — | US | disclosed |
| EP-1160848-B1 | Composition for silica-based film formation | JSR CORP (JP) | 2011-10-05 | — | — | EP | disclosed |
| EP-2372458-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM FORMATION COMPOSITION HAVING ANION GROUP | Nissan Chemical Industries, Ltd. (JP) | 2011-10-05 | — | — | EP | disclosed |
| US-8030221-B2 | Method for producing low-k l film, semiconductor device, and method for manufacturing the same | ELPIDA MEMORY, INC. (JP) | 2011-10-04 | — | — | US | disclosed |
| US-8017700-B2 | Polycarbosilane, method for producing same, silica composition for coating application, and silica film | JSR CORPORATION (JP) | 2011-09-13 | — | — | US | disclosed |
| EP-2336256-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM WITH ONIUM GROUP | Nissan Chemical Industries, Ltd. (JP) | 2011-06-22 | — | — | EP | disclosed |
| EP-1981074-B1 | ORGANIC SILICA FILM AND METHOD FOR FORMING SAME, COMPOSITION FOR FORMING INSULATING FILM OF SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE | JSR CORP (JP) | 2011-06-22 | — | — | EP | disclosed |
| US-20110143149-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2011-06-16 | — | — | US | disclosed |
| US-20110118422-A1 | LIQUID CRYSTAL ALIGNING AGENT, METHOD OF PRODUCING A LIQUID CRYSTAL ALIGNMENT FILM AND LIQUID CRYSTAL DISPLAY DEVICE | JSR CORPORATION (JP) | 2011-05-19 | — | — | US | disclosed |
| US-7939590-B2 | Composition for forming silica-based coating film | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-05-10 | — | — | US | disclosed |
| US-20110105700-A1 | LIQUID CRYSTAL ALIGNING AGENT, LIQUID CRYSTAL ALIGNMENT FILM AND LIQUID CRYSTAL DISPLAY DEVICE | JSR CORPORATION (JP) | 2011-05-05 | — | — | US | disclosed |
| US-7932295-B2 | Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR CORPORATION (JP) | 2011-04-26 | — | — | US | disclosed |
| US-20110086958-A1 | PROCESS FOR PREPARING REDISPERSIBLE SURFACE-MODIFIED SILICON DIOXIDE PARTICLES | EVONIK DEGUSSA GMBH (DE) | 2011-04-14 | — | — | US | disclosed |
| US-7923522-B2 | excellent in stability of particle size and to be used for electronic materials; adding a hydrolyzable silane compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-04-12 | — | — | US | disclosed |
| US-20110076416-A1 | METHOD OF MAKING POROUS MATERIALS AND POROUS MATERIALS PREPARED THEREOF | BASF SE (DE) | 2011-03-31 | — | — | US | disclosed |
| US-20110073977-A1 | AMINO ACID GENERATOR AND POLYSILOXANE COMPOSITION CONTAINING THE SAME | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2011-03-31 | — | — | US | disclosed |
| US-20110068301-A1 | LIQUID CRYSTAL ALIGNING AGENT, METHOD OF PRODUCING A LIQUID CRYSTAL ALIGNMENT FILM AND LIQUID CRYSTAL DISPLAY DEVICE | JSR CORPORATION (JP) | 2011-03-24 | — | — | US | disclosed |
| EP-1559761-B1 | Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device | SHINETSU CHEMICAL CO (JP) | 2011-03-09 | — | — | EP | disclosed |
| US-20110043739-A1 | LIQUID CRYSTAL ALIGNING AGENT, LIQUID CRYSTAL ALIGNMENT FILM AND LIQUID CRYSTAL DISPLAY DEVICE | JSR CORPORATION (JP) | 2011-02-24 | — | — | US | disclosed |
| US-7893538-B2 | Organic silica film and method for forming same, composition for forming insulating film of semiconductor device and method for producing same, wiring structure and semiconductor device | JSR CORPORATION (JP) | 2011-02-22 | — | — | US | disclosed |
| US-20110020170-A1 | METAL NANOPARTICLES STABILIZED WITH DERIVATIZED POLYETHYLENEIMINES OR POLYVINYLAMINES | BASF SE (DE) | 2011-01-27 | — | — | US | disclosed |
| US-20110018108-A1 | COMPOSITION AND METHOD FOR PRODUCTON THEREOF, POROUS MATERIAL AND METHOD FOR PRODUCTION THEREOF, INTERLAYER INSULATING FILM, SEMICONDUCTOR MATERIAL, SEMICONDUCTOR DEVICE, AND LOW-REFRACTIVE-INDEX SURFACE PROTECTION FILM | MITSUI CHEMICALS ,INC. (JP) | 2011-01-27 | — | — | US | disclosed |
| US-7875317-B2 | formed by hydrolyzing and condensing a siloxy compound in the presence of a polycarbosilane; low relative dielectric constant and excellent mechanical strength, storage stability, and chemical resistance; semiconductors | JSR CORPORATION (JP) | 2011-01-25 | — | — | US | disclosed |
| US-20100330505-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING CYCLIC AMINO GROUP | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2010-12-30 | — | — | US | disclosed |
| EP-2267080-A1 | COMPOSITION AND METHOD FOR PRODUCTION THEREOF, POROUS MATERIAL AND METHOD FOR PRODUCTION THEREOF, INTERLAYER INSULATING FILM, SEMICONDUCTOR MATERIAL, SEMICONDUCTOR DEVICE, AND LOW-REFRACTIVE-INDEX SURFACE PROTECTION FILM | Mitsui Chemicals, Inc. (JP) | 2010-12-29 | — | — | EP | disclosed |
| US-20100304305-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING POLYMER HAVING NITROGEN-CONTAINING SILYL GROUP | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2010-12-02 | — | — | US | disclosed |
| EP-2256541-A1 | A LIQUID CRYSTAL ORIENTATING AGENT, A LIQUID CRYSTAL ORIENTATING FILM AND A LIQUID CRYSTAL DISPLAY ELEMENT | JSR Corporation (JP) | 2010-12-01 | — | — | EP | disclosed |
| US-20100289143-A1 | METHOD FOR PRODUCING LOW-k FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME | ELPIDA MEMORY, INC (JP) | 2010-11-18 | — | — | US | disclosed |
| US-20100291487-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION HAVING UREA GROUP | NISSAN CHEMICAL INDUSTRIES LTD. (JP) | 2010-11-18 | — | — | US | disclosed |
| US-20100283133-A1 | FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | HAMADA YOSHITAKA | 2010-11-11 | — | — | US | disclosed |
| EP-2249204-A1 | SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING CYCLIC AMINO GROUP | Nissan Chemical Industries, Ltd. (JP) | 2010-11-10 | — | — | EP | disclosed |
| US-20100269732-A1 | AQUEOUS DISPERSION OF SURFACE-TREATED CARBON BLACK AND METHOD OF PRODUCING THE SAME | TOKAI CARBON CO., LTD. (JP) | 2010-10-28 | — | — | US | disclosed |
| EP-2243806-A1 | AQUEOUS DISPERSION OF SURFACE-TREATED CARBON BLACK AND METHOD OF PRODUCING THE SAME | Tokai Carbon Co., Ltd. (JP) | 2010-10-27 | — | — | EP | disclosed |
| US-7807267-B2 | Method of modifying porous film, modified porous film and use of same | MITSUI CHEMICALS, INC. (JP) | 2010-10-05 | — | — | US | disclosed |
| EP-1296365-B1 | Method of film formation | JSR CORP (JP) | 2010-09-22 | — | — | EP | disclosed |
| US-20100233482-A1 | Organic silicon oxide fine particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device | HAMADA YOSHITAKA | 2010-09-16 | — | — | US | disclosed |
| US-20100233635-A1 | METHOD OF FORMING PATTERN AND COMPOSITION FOR FORMING OF ORGANIC THIN-FILM FOR USE THEREIN | JSR CORPORATION (JP) | 2010-09-16 | — | — | US | disclosed |
| US-20100233632-A1 | SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, AND PATTERN FORMING METHOD | JSR CORPORATION (JP) | 2010-09-16 | — | — | US | disclosed |
| US-7794533-B2 | Oil-based ink composition for writing utensil and writing utensil employing the same | MITSUBISHI PENCIL CO., LTD. (JP) | 2010-09-14 | — | — | US | disclosed |
| US-7786022-B2 | Method for forming insulating film with low dielectric constant | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-08-31 | — | — | US | disclosed |
| US-20100200990-A1 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCED THEREWITH | ULVAC INC. (JP) | 2010-08-12 | — | — | US | disclosed |
| US-20100196428-A1 | METHOD FOR PRODUCING COSMETIC PREPARATIONS | BASF SE (DE) | 2010-08-05 | — | — | US | disclosed |
| US-7754330-B2 | Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-07-13 | — | — | US | disclosed |
| US-20100168327-A1 | POLYMER AND PROCESS FOR PRODUCING THE SAME, COMPOSITION FOR FORMING INSULATING FILM, AND INSULATING FILM AND METHOD OF FORMING THE SAME | JSR CORPORATION (JP) | 2010-07-01 | — | — | US | disclosed |
| US-20100167024-A1 | NEGATIVE-TONE RADIATION-SENSITIVE COMPOSITION, CURED PATTERN FORMING METHOD, AND CURED PATTERN | JSR CORPORATION (JP) | 2010-07-01 | — | — | US | disclosed |
| EP-2196854-A1 | COMPOSITION CONTAINING POLYMER HAVING NITROGENOUS SILYL GROUP FOR FORMING RESIST UNDERLAYER FILM | Nissan Chemical Industries, Ltd. (JP) | 2010-06-16 | — | — | EP | disclosed |
| US-7736748-B2 | Insulating-film-forming composition, method of producing the same, silica-based insulating film, and method of forming the same | JSR CORPORATION (JP) | 2010-06-15 | — | — | US | disclosed |
| US-7727907-B2 | Manufacturing method of semiconductor device and semiconductor device produced therewith | ULVAC INC. (JP) | 2010-06-01 | — | — | US | disclosed |
| EP-2182405-A1 | LIQUID CRYSTAL ALIGNING AGENT, METHOD FOR PRODUCING LIQUID CRYSTAL ALIGNMENT FILM, AND LIQUID CRYSTAL DISPLAY DEVICE | JSR Corporation (JP) | 2010-05-05 | — | — | EP | disclosed |
| EP-2182406-A1 | LIQUID CRYSTAL ALIGNING AGENT, METHOD FOR FORMING LIQUID CRYSTAL ALIGNMENT FILM, AND LIQUID CRYSTAL DISPLAY DEVICE | JSR Corporation (JP) | 2010-05-05 | — | — | EP | disclosed |
| EP-2182407-A1 | LIQUID CRYSTAL ALIGNING AGENT, METHOD FOR PRODUCING LIQUID CRYSTAL ALIGNMENT FILM, AND LIQUID CRYSTAL DISPLAY DEVICE | JSR Corporation (JP) | 2010-05-05 | — | — | EP | disclosed |
| US-7687590-B2 | Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts | HITACHI CHEMICAL COMPANY, LTD. (JP) | 2010-03-30 | — | — | US | disclosed |
| EP-1566417-B1 | COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE | PANASONIC CORP (JP) | 2010-03-24 | — | — | EP | disclosed |
| US-7682701-B2 | Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts | HITACHI CHEMICAL CO., LTD. (JP) | 2010-03-23 | — | — | US | disclosed |
| US-20100063221-A1 | POLYSILOXANE COMPOSITION | KANEKA CORPORATION | 2010-03-11 | — | — | US | disclosed |
| US-7674401-B2 | Method of producing a thin conductive metal film | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2010-03-09 | — | — | US | disclosed |
| US-20100040895-A1 | HIGH-TEMPERATURE BONDING COMPOSITION, SUBSTRATE BONDING METHOD, AND 3-D SEMICONDUCTOR DEVICE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-02-18 | — | — | US | disclosed |
| US-20100040893-A1 | SUBSTRATE JOINING METHOD AND 3-D SEMICONDUCTOR DEVICE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-02-18 | — | — | US | disclosed |
| EP-2154710-A2 | Substrate joining method and 3-D semiconductor device | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-02-17 | — | — | EP | disclosed |
| EP-2154708-A1 | High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-02-17 | — | — | EP | disclosed |
| WO-2010006837-A2 | PROCESS FOR PREPARING REDISPERSIBLE SURFACE-MODIFIED SILICON DIOXIDE PARTICLES | EVONIK DEGUSSA GMBH (DE) | 2010-01-21 | — | — | WO | disclosed |
| US-20100007025-A1 | ORGANIC SILICA FILM AND METHOD FOR FORMING SAME, COMPOSITION FOR FORMING INSULATING FILM OF SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE | JSR CORPORATION (JP) | 2010-01-14 | — | — | US | disclosed |
| WO-2010003743-A1 | DISPERSION COMPRISING INDIUM TIN OXIDE PARTICLES | EVONIK DEGUSSA GMBH (DE) | 2010-01-14 | — | — | WO | disclosed |
| US-20090311622-A1 | METHOD OF FORMING PATTERN, COMPOSITION FOR FORMING UPPER-LAYER FILM, AND COMPOSITION FOR FORMING UNDER-LAYER FILM | JSR CORPORATION (JP) | 2009-12-17 | — | — | US | disclosed |
| WO-2009150021-A2 | METHOD OF MAKING POROUS MATERIALS AND POROUS MATERIALS PREPARED THEREOF | BASF SE (DE) | 2009-12-17 | — | — | WO | disclosed |
| US-20090294726-A1 | ORGANIC SILICON OXIDE FINE PARTICLES AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-12-03 | — | — | US | disclosed |
| US-20090294922-A1 | ORGANIC SILICON OXIDE FINE PARTICLE AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | PANASONIC CORPORATION (JP) | 2009-12-03 | — | — | US | disclosed |
| US-7625642-B2 | Borazine-based resin, and method for production thereof, borazine based resin composition, insulating coating and method for formation thereof, and electronic parts having the insulating coating | HITACHI CHEMICAL CO., LTD (JP) | 2009-12-01 | — | — | US | disclosed |
| US-20090281237-A1 | POLYCARBOSILANE, METHOD FOR PRODUCING SAME, SILICA COMPOSITION FOR COATING APPLICATION, AND SILICA FILM | JSR CORPORATION (JP) | 2009-11-12 | — | — | US | disclosed |
| EP-1090967-B1 | Composition for film formation, method of film formation, and insulating film | JSR CORP (JP) | 2009-11-11 | — | — | EP | disclosed |
| US-20090255439-A1 | Oil-Based Ink Composition for Writing Utensil and Writing Utensil Employing the Same | MITSUBISHI PENCIL CO., LTD. (JP) | 2009-10-15 | — | — | US | disclosed |
| US-20090240017-A1 | Borazine-based resin, process for its production, borazine-based resin composition, insulating film and method for its formation | HITACHI CHEMICAL CO., LTD. (JP) | 2009-09-24 | — | — | US | disclosed |
| US-20090186210-A1 | PRECURSOR COMPOSITION FOR POROUS THIN FILM, METHOD FOR PREPARATION OF THE PRECURSOR COMPOSITION, POROUS THIN FILM, METHOD FOR PREPARATION OF THE POROUS THIN FILM, AND SEMICONDUCTOR DEVICE | ULVAC. INC. (JP) | 2009-07-23 | — | — | US | disclosed |
| US-20090179357-A1 | Method and Apparatus for Producing Porous Silica | MITSUI CHEMICALS, INC. (JP) | 2009-07-16 | — | — | US | disclosed |
| US-7556860-B2 | Laminate and method of forming the same, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2009-07-07 | — | — | US | disclosed |
| US-20090162782-A1 | Silicon-Containing Resist Underlayer Coating Forming Composition for Forming Photo-Crosslinking Cured Resist Underlayer Coating | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2009-06-25 | — | — | US | disclosed |
| US-7528207-B2 | Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film | JSR CORPORATION (JP) | 2009-05-05 | — | — | US | disclosed |
| US-7521491-B2 | Oil-based ink composition for ballpoint pen and ball-point pen using oil-based ink | MITSUBISHI PENCIL CO., LTD. (JP) | 2009-04-21 | — | — | US | disclosed |
| EP-2048541-A1 | METHOD OF FORMING PATTERN, COMPOSITION FOR FORMING UPPER-LAYER FILM, AND COMPOSITION FOR FORMING LOWER-LAYER FILM | JSR Corporation (JP) | 2009-04-15 | — | — | EP | disclosed |
| EP-1127929-B1 | Composition for film formation, method of film formation, and silica-based film | JSR CORP (JP) | 2009-04-15 | — | — | EP | disclosed |
| US-7514151-B2 | Insulating film and method for forming the same, and film-forming composition | JSR CORPORATION (JP) | 2009-04-07 | — | — | US | disclosed |
| EP-2034364-A1 | METHOD OF FORMING PATTERN AND COMPOSITION FOR FORMING OF ORGANIC THIN-FILM FOR USE THEREIN | JSR Corporation (JP) | 2009-03-11 | — | — | EP | disclosed |
| EP-2031029-A1 | Oil-based ink composition for ballpoint pen using oil-based ink | Mitsubishi Pencil Co., Ltd. (JP) | 2009-03-04 | — | — | EP | disclosed |
| US-20090053503-A1 | Precursor composition for porous film and method for preparing the composition, porous film and method for preparing the porous film, and semiconductor device | NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) | 2009-02-26 | — | — | US | disclosed |
| EP-2025709-A1 | PRECURSOR COMPOSITION FOR POROUS MEMBRANE, PROCESS FOR PREPARATION OF THE PRECURSOR COMPOSITION, POROUS MEMBRANE, PROCESS FOR PRODUCTION OF THE POROUS MEMBRANE, AND SEMICONDUCTOR DEVICE | ULVAC, INC. (JP) | 2009-02-18 | — | — | EP | disclosed |
| US-20090018247-A1 | COMPOSITION FOR FORMING SILICA-BASED COATING FILM | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-15 | — | — | US | disclosed |
| EP-1245638-B1 | Composition for insulating film formation | JSR CORP (JP) | 2009-01-14 | — | — | EP | disclosed |
| US-7462229-B2 | Oil-based ink composition for ballpoint pen using oil-based ink | MITSUBISHI PENCIL CO., LTD. (JP) | 2008-12-09 | — | — | US | disclosed |
| US-7462678-B2 | Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film | JSR CORPORATION (JP) | 2008-12-09 | — | — | US | disclosed |
| US-20080290472-A1 | SEMICONDUCTOR INTERLAYER-INSULATING FILM FORMING COMPOSITION, PREPARATION METHOD THEREOF, FILM FORMING METHOD, AND SEMICONDUCTOR DEVICE | SHIN ETSU CHEMICAL CO., LTD. | 2008-11-27 | — | — | US | disclosed |
| US-20080290521-A1 | FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | SHIN ETSU CHEMICAL CO., LTD. | 2008-11-27 | — | — | US | disclosed |
| US-20080292863-A1 | SILOXANE POLYMER, PREPARATION METHOD THEREOF, POROUS-FILM FORMING COATING SOLUTION CONTAINING THE POLYMER, POROUS FILM, AND SEMICONDUCTOR DEVICE USING THE POROUS FILM | SHIN ETSU CHEMICAL CO., LTD. | 2008-11-27 | — | — | US | disclosed |
| US-7446055-B2 | Aerosol misted deposition of low dielectric organosilicate films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2008-11-04 | — | — | US | disclosed |
| US-20080268264-A1 | Method for Forming Organic Silica Film, Organic Silica Film, Wiring Structure, Semiconductor Device, and Composition for Film Formation | JSR CORPORATION (JP) | 2008-10-30 | — | — | US | disclosed |
| EP-1981074-A1 | ORGANIC SILICA FILM AND METHOD FOR FORMING SAME, COMPOSITION FOR FORMING INSULATING FILM OF SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE | JSR Corporation (JP) | 2008-10-15 | — | — | EP | disclosed |
| US-20080248280-A1 | Process for Preparing a Dispersion Liquid of Zeolite Fine Particles | SHIN-ETSU CHEMICAL CO., LTD. | 2008-10-09 | — | — | US | disclosed |
| US-20080248328-A1 | Process for Preparing a Zeolite-Containing Film | SHIN-ETSU CHEMICAL CO., LTD. | 2008-10-09 | — | — | US | disclosed |
| US-20080246153-A1 | ORGANIC SILICA-BASED FILM, METHOD OF FORMING THE SAME, COMPOSITION FOR FORMING INSULATING FILM FOR SEMICONDUCTOR DEVICE, INTERCONNECT STRUCTURE, AND SEMICONDUCTOR DEVICE | JSR CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
| EP-1972998-A1 | SILICON-CONTAINING RESIST UNDERLYING LAYER FILM FORMING COMPOSITION FOR FORMATION OF PHOTOCROSSLINKING CURED RESIST UNDERLYING LAYER FILM | Nissan Chemical Industries, Ltd. (JP) | 2008-09-24 | — | — | EP | disclosed |
| US-20080224106-A1 | PROCESS FOR TREATING COMPOSITIONS CONTAINING URANIUM AND PLUTONIUM | CH2M HILL, INC. | 2008-09-18 | — | — | US | disclosed |
| WO-2008105928-A2 | PROCESS FOR TREATING COMPOSITIONS CONTAINING URANIUM AND PLUTONIUM | JOHNSON MICHAEL ERNEST (US) | 2008-09-04 | — | — | WO | disclosed |
| EP-1956057-A1 | OIL-BASED INK COMPOSITION FOR WRITING UTENSIL AND WRITING UTENSIL EMPLOYING THE SAME | Mitsubishi Pencil Co., Ltd. (JP) | 2008-08-13 | — | — | EP | disclosed |
| US-7405459-B2 | Semiconductor device comprising porous film | SHIN-ETSU CHEMICAL CO. LTD. (JP) | 2008-07-29 | — | — | US | disclosed |
| EP-1947135-A1 | POLYCARBOSILANE, METHOD FOR PRODUCING SAME, SILICA COMPOSITION FOR COATING APPLICATION, AND SILICA FILM | JSR Corporation (JP) | 2008-07-23 | — | — | EP | disclosed |
| EP-1246239-B1 | Method of forming dual damascene structure | JSR CORP (JP) | 2008-07-23 | — | — | EP | disclosed |
| US-7402621-B2 | Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-07-22 | — | — | US | disclosed |
| US-7399715-B2 | Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR CORPORATION (JP) | 2008-07-15 | — | — | US | disclosed |
| US-7381754-B2 | Oil-based ink composition and uses thereof | MITSUBISHI PENCIL CO., LTD. (JP) | 2008-06-03 | — | — | US | disclosed |
| US-20080122101-A1 | Manufacturing Method Of Semiconductor Device And Semiconductor Device Produced Therewith | ROHM CO., LTD. (JP) | 2008-05-29 | — | — | US | disclosed |
| US-20080118737-A1 | excels in dielectric properties, adhesion, film consistency, mechanical strength, easily thinned; made from an amorphous polymer made by hydrolyzing and condensing an silane compoundl, and and a zeolite sol made with a quaternary ammonium hydroxide | SHIN-ETSU CHEMICAL CO. LTD. | 2008-05-22 | — | — | US | disclosed |
| US-20080114115-A1 | Composition for forming coating and coating formed of composition | TOKYO OHKA KOGYO CO., LTD | 2008-05-15 | — | — | US | disclosed |
| EP-1640404-B1 | Polycarbosilane and method of producing the same | JSR CORP (JP) | 2008-05-07 | — | — | EP | disclosed |
| US-7358300-B2 | Comprising polysiloxane obtained by hydrolytic condensation; alcoholic solvent alcohol capable of dissolving siloxane resin, ammonium salt, and thermal decomposing/volatile compound; curing; bonding and high strength; mechanical properties | HITACHI CHEMICAL CO., LTD. (JP) | 2008-04-15 | — | — | US | disclosed |
| US-7358317-B2 | Polycarbosilane and method of producing the same | JSR CORPORATION (JP) | 2008-04-15 | — | — | US | disclosed |
| US-7332446-B2 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-02-19 | — | — | US | disclosed |
| US-20080038527-A1 | Method for Forming Organic Silica Film, Organic Silica Film, Wiring Structure, Semiconductor Device, and Composition for Film Formation | JSR CORPORATION (JP) | 2008-02-14 | — | — | US | disclosed |
| EP-1535976-B1 | Composition for film formation, method for preparing the composition, and method for forming insulating film | JSR CORP (JP) | 2008-01-16 | — | — | EP | disclosed |
| EP-1867687-A1 | PRECURSOR COMPOSITION FOR POROUS MEMBRANE AND PROCESS FOR PREPARATION THEREOF, POROUS MEMBRANE AND PROCESS FOR PRODUCTION THEREOF, AND SEMICONDUCTOR DEVICE | ULVAC, INC. (JP) | 2007-12-19 | — | — | EP | disclosed |
| US-7309722-B2 | excels in dielectric properties, adhesion, film consistency, mechanical strength, easily thinned; made from an amorphous polymer made by hydrolyzing and condensing an silane compoundl, and and a zeolite sol made with a quaternary ammonium hydroxide | SHIN-ETSU CHEMICAL CO. LTD. (JP) | 2007-12-18 | — | — | US | disclosed |
| US-7297360-B2 | Insulation film | JSR CORPORATION (JP) | 2007-11-20 | — | — | US | disclosed |
| US-7291567-B2 | Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR CORPORATION (JP) | 2007-11-06 | — | — | US | disclosed |
| EP-1188807-B1 | Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing | JSR CORP (JP) | 2007-10-17 | — | — | EP | disclosed |
| US-20070228568-A1 | Manufacturing Method of Semiconductor Device and Semiconductor Device Produced Therewith | ROHM CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
| US-20070185263-A1 | COMPOSITION FOR FORMING SILICA-BASED COATING WITH A LOW REFRACTIVE INDEX | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-08-09 | — | — | US | disclosed |
| US-20070185262-A1 | COMPOSITION FOR FORMING COLORED SILICA-BASED COATING | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-08-09 | — | — | US | disclosed |
| US-20070178319-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. (JP) | 2007-08-02 | — | — | US | disclosed |
| US-7244657-B2 | Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | SHIN-ETSU CHEMICAL CO. LTD. (JP) | 2007-07-17 | — | — | US | disclosed |
| US-20070151951-A1 | STOPPER FOR CHEMICAL MECHANICAL PLANARIZATION, METHOD FOR MANUFACTURING SAME, AND CHEMICAL MECHANICAL PLANARIZATION METHOD | JSR CORPORATION (JP) | 2007-07-05 | — | — | US | disclosed |
| US-20070135565-A1 | COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2007-06-14 | — | — | US | disclosed |
| US-20070108593-A1 | Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | OGIHARA TSUTOMU | 2007-05-17 | — | — | US | disclosed |
| US-20070087124-A1 | COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO. LTD. (JP) | 2007-04-19 | — | — | US | disclosed |
| US-7205338-B2 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-04-17 | — | — | US | disclosed |
| US-7189651-B2 | Stopper for chemical mechanical planarization, method for manufacturing same, and chemical mechanical planarization method | JSR CORPORATION (JP) | 2007-03-13 | — | — | US | disclosed |
| US-20070031687-A1 | Insulating-film-forming composition, method of producing the same, silica-based insulating film, and method of forming the same | JSR CORPORATION (JP) | 2007-02-08 | — | — | US | disclosed |
| US-7172648-B2 | Oil-base ballpoint ink composition and oily ballpoint pens | MITSUBISHI PENCIL CO., LTD. (JP) | 2007-02-06 | — | — | US | disclosed |
| US-20070027287-A1 | Polymer and process for producing the same, composition for forming insulating film, and insulating film and method of forming the same | JSR CORPORATION (JP) | 2007-02-01 | — | — | US | disclosed |
| US-20070020467-A1 | Composition for forming insulating film, method for producing same, silica-based insulating film, and method for forming same | JSR CORPORATION (JP) | 2007-01-25 | — | — | US | disclosed |
| US-20070021580-A1 | Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film | JSR CORPORATION (JP) | 2007-01-25 | — | — | US | disclosed |
| EP-1088868-B1 | Composition for film formation, method of film formation, and insulating film | JSR CORP (JP) | 2007-01-24 | — | — | EP | disclosed |
| EP-1746139-A1 | COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING SAME, SILICA INSULATING FILM AND METHOD FOR FORMING SAME | JSR Corporation (JP) | 2007-01-24 | — | — | EP | disclosed |
| EP-1746122-A1 | METHOD FOR FORMING ORGANIC SILICA FILM, ORGANIC SILICA FILM, WIRING STRUCTURE, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FILM FORMATION | JSR Corporation (JP) | 2007-01-24 | — | — | EP | disclosed |
| EP-1746123-A1 | METHOD FOR FORMING ORGANIC SILICA FILM, ORGANIC SILICA FILM, WIRING STRUCTURE, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FILM FORMATION | JSR Corporation (JP) | 2007-01-24 | — | — | EP | disclosed |
| US-20070015892-A1 | Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film | JSR CORPORATION (JP) | 2007-01-18 | — | — | US | disclosed |
| EP-1099719-B1 | Diyne-containing (co) polymer, processes for producing the same, and cured film | JSR CORP (JP) | 2007-01-17 | — | — | EP | disclosed |
| EP-1298176-B1 | Stacked film insulating film and substrate for semiconductor | JSR CORP (JP) | 2007-01-03 | — | — | EP | disclosed |
| US-7153767-B2 | Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing | JSR CORPORATION (JP) | 2006-12-26 | — | — | US | disclosed |
| EP-1295924-B1 | Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor | JSR CORP (JP) | 2006-12-13 | — | — | EP | disclosed |
| US-20060275614-A1 | Insulating film and method for forming the same, and film-forming composition | JSR CORPORATION (JP) | 2006-12-07 | — | — | US | disclosed |
| EP-1719793-A1 | POLYMER AND PROCESS FOR PRODUCING THE SAME, COMPOSITION FOR FORMING INSULATING FILM, AND INSULATING FILM AND METHOD OF FORMING THE SAME | JSR Corporation (JP) | 2006-11-08 | — | — | EP | disclosed |
| US-7132473-B2 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2006-11-07 | — | — | US | disclosed |
| US-20060246371-A1 | Photosensitive fluororesin composition, cured film obtained from the composition, and method of forming pattern | JSR CORPORATION (JP) | 2006-11-02 | — | — | US | disclosed |
| US-7128976-B2 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2006-10-31 | — | — | US | disclosed |
| US-7126208-B2 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2006-10-24 | — | — | US | disclosed |
| EP-1253175-B1 | Composition for film formation, method of film formation, and silica-based film | JSR CORP (JP) | 2006-10-11 | — | — | EP | disclosed |
| US-20060220253-A1 | Porous film, composition and manufacturing method, interlayer dielectric film, and semiconductor device | HAMADA YOSHITAKA | 2006-10-05 | — | — | US | disclosed |
| US-20060216531-A1 | Laminate and method of forming the same, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2006-09-28 | — | — | US | disclosed |
| EP-1705208-A1 | COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING SAME, SILICA INSULATING FILM AND METHOD FOR FORMING SAME | JSR Corporation (JP) | 2006-09-27 | — | — | EP | disclosed |
| EP-1705206-A1 | METHOD FOR PRODUCING POLYMER, POLYMER, COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING INSULATING FILM, AND INSULATING FILM | JSR Corporation (JP) | 2006-09-27 | — | — | EP | disclosed |
| EP-1705207-A1 | METHOD FOR PRODUCING POLYMER, POLYMER, COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING INSULATING FILM, AND INSULATING FILM | JSR Corporation (JP) | 2006-09-27 | — | — | EP | disclosed |
| US-20060211271-A1 | Aerosol misted deposition of low dielectric organosilicate films | VERSUM MATERIALS US, LLC | 2006-09-21 | — | — | US | disclosed |
| US-20060210812-A1 | Insulating film and method of forming the same | JSR CORPORATION (JP) | 2006-09-21 | — | — | US | disclosed |
| EP-1275704-B1 | OIL-BASED BALL-PEN INK COMPOSITION AND OIL-BASED BALL PEN | MITSUBISHI PENCIL CO (JP) | 2006-09-06 | — | — | EP | disclosed |
| EP-1696478-A1 | INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM | JSR Corporation (JP) | 2006-08-30 | — | — | EP | disclosed |
| EP-1122770-B1 | Silica-based insulating film and its manufacture | JSR CORP (JP) | 2006-08-09 | — | — | EP | disclosed |
| US-7084505-B2 | Porous film, composition and manufacturing method, interlayer dielectric film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2006-08-01 | — | — | US | disclosed |
| EP-1473342-B1 | OIL BASE BALLPOINT INK COMPOSITION AND OILY BALLPOINT PENS | MITSUBISHI PENCIL CO (JP) | 2006-07-19 | — | — | EP | disclosed |
| EP-1679184-A1 | LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM | JSR Corporation (JP) | 2006-07-12 | — | — | EP | disclosed |
| US-7071245-B2 | Oil-based ballpoint pen ink composition and oil-based ballpoint pen | MITSUBISHI PENCIL CO., LTD. (JP) | 2006-07-04 | — | — | US | disclosed |
| US-20060134336-A1 | Novel polycarbosilane and method of producing the same, film-forming composition, and film and method of forming the same | JSR CORPORATION (JP) | 2006-06-22 | — | — | US | disclosed |
| US-20060117996-A1 | Oil-based ink composition for ballpoint pen using oil-based ink | MITSUBISHI PENCIL CO., LTD. (JP) | 2006-06-08 | — | — | US | disclosed |
| US-7056052-B2 | Ink reservoir for writing instrument | MITSUBISHI PENCIL CO., LTD. (JP) | 2006-06-06 | — | — | US | disclosed |
| EP-1661934-A1 | Polycarbosilane and method of producing the same, film-forming composition, and film and method of forming the same | JSR Corporation (JP) | 2006-05-31 | — | — | EP | disclosed |
| US-20060110610-A1 | Borazine-based resin, and method for production thereof, borazine based resin composition, insulating coating and method for formation thereof, and electronic parts having the insulating coating | NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) | 2006-05-25 | — | — | US | disclosed |
| US-7026053-B2 | Process for producing silica-based film, silica-based film, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2006-04-11 | — | — | US | disclosed |
| EP-1640404-A1 | Polycarbosilane and method of producing the same | JSR Corporation (JP) | 2006-03-29 | — | — | EP | disclosed |
| US-20060063905-A1 | Polycarbosilane and method of producing the same | JSR CORPORATION (JP) | 2006-03-23 | — | — | US | disclosed |
| EP-1045290-B1 | Composition for resist underlayer film and method for producing the same | JSR CORP (JP) | 2006-03-15 | — | — | EP | disclosed |
| US-7011868-B2 | Fluorine-free plasma curing process for porous low-k materials | AXCELIS TECHNOLOGIES, INC. (US) | 2006-03-14 | — | — | US | disclosed |
| US-20060052566-A1 | Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts | HITACHI CHEMICAL CO., LTD. (JP) | 2006-03-09 | — | — | US | disclosed |
| EP-1256606-B1 | Pigment containing ink and production method thereof | CANON KK (JP) | 2006-03-08 | — | — | EP | disclosed |
| EP-1146092-B1 | Composition for film formation, method of film formation, and silica-based film | JSR CORP (JP) | 2006-03-08 | — | — | EP | disclosed |
| US-20060040110-A1 | Method of modifying porous film, modified porous film and use of same | MITSUI CHEMICALS, INC. (JP) | 2006-02-23 | — | — | US | disclosed |
| US-20060024980-A1 | Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR CORPORATION (JP) | 2006-02-02 | — | — | US | disclosed |
| EP-1619226-A1 | Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR Corporation (JP) | 2006-01-25 | — | — | EP | disclosed |
| US-20060006541-A1 | Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR CORPORATION (JP) | 2006-01-12 | — | — | US | disclosed |
| EP-1615260-A2 | Organic silicon-oxide-based film, composition and method for forming the same, and semiconductor device | JSR Corporation (JP) | 2006-01-11 | — | — | EP | disclosed |
| US-20050255326-A1 | Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts | HITACHI CHEMICAL CO., LTD. (JP) | 2005-11-17 | — | — | US | disclosed |
| EP-1593149-A1 | FLUORINE-FREE PLASMA CURING PROCESS FOR POROUS LOW-K-MATERIALS | Axcelis Technologies, Inc. (US) | 2005-11-09 | — | — | EP | disclosed |
| US-20050228070-A1 | Oil-based ink composition for ballpoint pen and ball-point pen using oil-based ink | MITSUBISHI PENCIL CO., LTD | 2005-10-13 | — | — | US | disclosed |
| US-20050207824-A1 | Oil-base ballpoint ink composition and oily ballpoint pens | MITSUBISHI PENCIL CO., LTD. (JP) | 2005-09-22 | — | — | US | disclosed |
| US-6945726-B2 | Refill for oil-based ink ballpoint pen and oil-based ink ballpoint pen | MITSUBISHI PENCIL CO. LTD. (JP) | 2005-09-20 | — | — | US | disclosed |
| EP-1568744-A1 | COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-08-31 | — | — | EP | disclosed |
| EP-1566417-A1 | COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-08-24 | — | — | EP | disclosed |
| EP-1564269-A1 | COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-08-17 | — | — | EP | disclosed |
| US-6930393-B2 | hydrolyzable silicon compound or at least one product resulting from at least partial hydrolysis condensation of the silicon compound | SHIN-ETSU CHEMICAL CO. LTD. (JP) | 2005-08-16 | — | — | US | disclosed |
| EP-1117102-B1 | Method of manufacturing material for forming insulating film | JSR CORP (JP) | 2005-08-10 | — | — | EP | disclosed |
| US-20050169694-A1 | Writing ink accommodating tube | MITSUBISHI PENCIL CO., LTD. (JP) | 2005-08-04 | — | — | US | disclosed |
| EP-1559761-A1 | Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-08-03 | — | — | EP | disclosed |
| US-20050165197-A1 | Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-07-28 | — | — | US | disclosed |
| EP-1058274-B1 | Composition for film formation and material for insulating film formation | JSR CORP (JP) | 2005-07-27 | — | — | EP | disclosed |
| US-6916861-B2 | Pigment containing ink and production method thereof | CANON KABUSHIKI KAISHA (JP) | 2005-07-12 | — | — | US | disclosed |
| EP-1547975-A1 | METHOD FOR MODIFYING POROUS FILM, MODIFIED POROUS FILM AND USE OF SAME | Mitsui Chemicals, Inc. (JP) | 2005-06-29 | — | — | EP | disclosed |
| EP-1544264-A1 | OIL-BASED INK COMPOSITION FOR BALLPOINT PEN USING OIL-BASED INK | Mitsubishi Pencil Co., Ltd. (JP) | 2005-06-22 | — | — | EP | disclosed |
| EP-1544265-A1 | OIL-BASED INK COMPOSITION FOR BALLPOINT PEN AND BALLPOINT PEN USING OIL-BASED INK | Mitsubishi Pencil Co., Ltd. (JP) | 2005-06-22 | — | — | EP | disclosed |
| US-20050123341-A1 | Refill for oil-based ink ballpoint pen and oil-based ink ballpoint pen | MITSUBISHI PENCIL CO., LTD. (JP) | 2005-06-09 | — | — | US | disclosed |
| US-6902771-B2 | Process for producing silica-based film, silica-based film, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2005-06-07 | — | — | US | disclosed |
| US-20050119394-A1 | Comprising polysiloxane obtained by hydrolytic condensation; alcoholic solvent alcohol capable of dissolving siloxane resin, ammonium salt, and thermal decomposing/volatile compound; curing; bonding and high strength; mechanical properties | HITACHI CHEMICAL CO., LTD. (JP) | 2005-06-02 | — | — | US | disclosed |
| EP-1535976-A1 | Composition for film formation, method for preparing the composition, and method for forming insulating film | JSR Corporation (JP) | 2005-06-01 | — | — | EP | disclosed |
| US-20050112386-A1 | Composition for film formation, method for preparing the composition, and method for forming insulating film | JSR CORPORATION (JP) | 2005-05-26 | — | — | US | disclosed |
| US-6890605-B2 | Method of film formation, insulating film, and substrate for semiconductor | JSR CORPORATION (JP) | 2005-05-10 | — | — | US | disclosed |
| US-20050096415-A1 | Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film | JSR CORPORATION (JP) | 2005-05-05 | — | — | US | disclosed |
| US-6884862-B2 | Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film | JSR CORPORATION (JP) | 2005-04-26 | — | — | US | disclosed |
| EP-1520891-A1 | Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film | JSR Corporation (JP) | 2005-04-06 | — | — | EP | disclosed |
| US-20050069648-A1 | Metal oxide dispersion | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2005-03-31 | — | — | US | disclosed |
| US-20050042464-A1 | Process for producing silica-based film, silica-based film, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2005-02-24 | — | — | US | disclosed |
| US-6852370-B2 | Composition for film formation and material for insulating film formation | JSR CORPORATION (JP) | 2005-02-08 | — | — | US | disclosed |
| EP-1500523-A1 | WRITING INK ACCOMMODATING TUBE | Mitsubishi Pencil Kabushiki Kaisha (JP) | 2005-01-26 | — | — | EP | disclosed |
| US-20050003218-A1 | Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing | JSR CORPORATION (JP) | 2005-01-06 | — | — | US | disclosed |
| US-6830611-B2 | Comprises triphenylmethane-based dye having stability when used in combination with a metal complex salt and dissolved in an alcohol or propylene glycol monomethyl ether; for ballpoint pens and stamp pads; colorfastness, flowability | MITSUBISHI PENCIL CO., LTD. (JP) | 2004-12-14 | — | — | US | disclosed |
| US-6824833-B2 | STACKED DIELECTRIC | JSR CORPORATION (JP) | 2004-11-30 | — | — | US | disclosed |
| US-20040232553-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-11-25 | — | — | US | disclosed |
| US-6818722-B2 | WATER GLASS DILUTED WITH WATER TO A CONCENTRATION OF 3 TO 15 WT % IS REACTED WITH A TRIORGANOHALOSILANE IN PRESENCE OF AN ACID CATALYST AND A SOLVENT TO PRODUCE A LOW VISCOSTY MQ RESIN | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-11-16 | — | — | US | disclosed |
| US-20040216641-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-11-04 | — | — | US | disclosed |
| US-20040219372-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-11-04 | — | — | US | disclosed |
| EP-1473342-A1 | OIL BASE BALLPOINT INK COMPOSITION AND OILY BALLPOINT PENS | Mitsubishi Pencil Co., Ltd. (JP) | 2004-11-03 | — | — | EP | disclosed |
| CN-1542071-A | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device | ��Խ��ѧ��ҵ��ʽ���� | 2004-11-03 | — | — | CN | disclosed |
| CN-1536023-A | Porous membrane shaping composition, preparation method of porous membrane, porous membrane intercalation insulating film and semiconductor device | ��Խ��ѧ��ҵ��ʽ���� | 2004-10-13 | — | — | CN | disclosed |
| US-20040195660-A1 | Composition for forming porous film, porous film and method for forming the same, interlayer insulator film, and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. | 2004-10-07 | — | — | US | disclosed |
| US-6800330-B2 | PRODUCT OBTAINED BY HYDROLYZING AND CONDENSING AT LEAST ONE SILANE COMPOUND, A COMPOUND COMPATIBLE WITH OR DISPERSIBLE IN THAT COMPOUND AND HAVING A BOILING POINT OR DECOMPOSITION TEMPERATURE OF 250-450 DEGREES C, SOLVENT | JSR CORPORATION (JP) | 2004-10-05 | — | — | US | disclosed |
| US-20040188846-A1 | Porous film, composition and manufacturing method, interlayer dielectric film, and semiconductor device | PANASONIC CORPORATION (JP) | 2004-09-30 | — | — | US | disclosed |
| US-20040188809-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. | 2004-09-30 | — | — | US | disclosed |
| EP-1122746-B1 | Composition for film formation and insulating film | JSR CORP (JP) | 2004-09-22 | — | — | EP | disclosed |
| US-20040180222-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. | 2004-09-16 | — | — | US | disclosed |
| US-6787193-B2 | DECOMPOSITION OF AN ORGANOSILICON COMPOUND | JSR CORPORATION (JP) | 2004-09-07 | — | — | US | disclosed |
| US-6786956-B2 | INK HAVING THEREIN MIXTURE OF PHOSPHORIC ACID ESTER HAVING ACID NUMBER OF 90 TO 600 AND WEAKLY CATIONIC COMPONENT SELECTED FROM IMIDAZOLINE-TYPE ACTIVATOR, POLYOXYETHYLENE ALKYAMINE, POLYOXYETHYLENE ALKYLAMIDE, ALKYLALKANOLAMIDE | MITSUBISHI PENCIL CO., LTD. (JP) | 2004-09-07 | — | — | US | disclosed |
| WO-2004066374-A1 | FLUORINE-FREE PLASMA CURING PROCESS FOR POROUS LOW-K-MATERIALS | AXCELIS TECHNOLOGIES, INC. (US) | 2004-08-05 | — | — | WO | disclosed |
| EP-1254917-B1 | Polymer comprising acetylene repeating units, process for the production, composition for film formation containing the same, method of film formation and insulating film | JSR CORP (JP) | 2004-06-30 | — | — | EP | disclosed |
| US-6749944-B2 | VAPOR DEPOSITION, OSCILLATION, HEATING USING ORGANOSILICON COMPOUND; FORMING DIELECTRIC | JSR CORPORATION (JP) | 2004-06-15 | — | — | US | disclosed |
| US-20040110896-A1 | Insulation film | JSR CORPORATION (JP) | 2004-06-10 | — | — | US | disclosed |
| US-20040110379-A1 | Stopper for chemical mechanical planarization, method for manufacturing same, and chemical mechanical planarization method | JSR CORPORATION (JP) | 2004-06-10 | — | — | US | disclosed |
| EP-1427004-A2 | Insulation film | JSR Corporation (JP) | 2004-06-09 | — | — | EP | disclosed |
| EP-1426424-A1 | Stopper for chemical mechanical planarization, method for manufacturing same, and chemical mechanical planarization method | JSR Corporation (JP) | 2004-06-09 | — | — | EP | disclosed |
| US-20040105986-A1 | excels in dielectric properties, adhesion, film consistency, mechanical strength, easily thinned; made from an amorphous polymer made by hydrolyzing and condensing an silane compoundl, and and a zeolite sol made with a quaternary ammonium hydroxide | PANASONIC CORPORATION (JP) | 2004-06-03 | — | — | US | disclosed |
| US-20040091419-A1 | Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2004-05-13 | — | — | US | disclosed |
| US-20040077757-A1 | Coating composition for use in producing an insulating thin film | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2004-04-22 | — | — | US | disclosed |
| US-20040028916-A1 | Fluorine-free plasma curing process for porous low-k materials | AXCELIS TECHNOLOGIES, INC. | 2004-02-12 | — | — | US | disclosed |
| US-6645881-B2 | Method of forming coating film, method of manufacturing semiconductor device and coating solution | KABUSHIKI KAISHA TOSHIBA (JP) | 2003-11-11 | — | — | US | disclosed |
| US-6642352-B2 | Providing a silicon inorganic polymer compound or polyarylenes or polyphenylene ether organic polymer compound, treating the polymeric compound with a zeta-potential producing filter material, and producing curable polymer compound | JSR CORPORATION (JP) | 2003-11-04 | — | — | US | disclosed |
| US-20030203987-A1 | Pigment containing ink and production method thereof | CANON KABUSHIKI KAISHA (JP) | 2003-10-30 | — | — | US | disclosed |
| US-20030157340-A1 | Process for producing silica-based film, silica-based film, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2003-08-21 | — | — | US | disclosed |
| US-20030153711-A1 | Preparation of organopolysiloxanes | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-08-14 | — | — | US | disclosed |
| US-20030139063-A1 | Method of forming coating film, method of manufacturing semiconductor device and coating solution | TOSHIBA MEMORY CORPORATION (JP) | 2003-07-24 | — | — | US | disclosed |
| US-20030134937-A1 | Oil-based ink composition and uses thereof | MITSUBISHI PENCIL CO., LTD. | 2003-07-17 | — | — | US | disclosed |
| EP-0924102-B1 | A method for lithographic printing by use of a lithographic printing plate provided by a heat sensitive non-ablatable wasteless imaging element and a fountain containing water-insoluble compounds | AGFA GEVAERT (BE) | 2003-07-02 | — | — | EP | disclosed |
| US-6576393-B1 | Hydrolysate and/or a condensate of a siloxane compound; compound generating an acid by ultraviolet irradiation and/or heating; adhesion, resistance to a developing solution, decrease in film loss in oxygen ashing of the resist | JSR CORPORATION (JP) | 2003-06-10 | — | — | US | disclosed |
| US-20030104225-A1 | Process for producing silica-based film, silica-based film, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2003-06-05 | — | — | US | disclosed |
| US-20030091838-A1 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2003-05-15 | — | — | US | disclosed |
| US-6562116-B1 | Oil based green ink; solvent selected from alcohols and glycol ethers, a resin dispersant, a yellow pigment, and a blue dye and a green pigment | MITSUBISHI PENCIL KABUSHIKI KAISHA (JP) | 2003-05-13 | — | — | US | disclosed |
| US-20030075074-A1 | Oil-base ink composition, writing utensils and dyes to be used therein | MITSUBISHI PENCIL CO., LTD. (JP) | 2003-04-24 | — | — | US | disclosed |
| US-20030077461-A1 | Stacked film, insulating film and substrate for semiconductor | JSR CORPORATION (JP) | 2003-04-24 | — | — | US | disclosed |
| EP-1298176-A2 | Stacked film insulating film and substrate for semiconductor | JSR Corporation (JP) | 2003-04-02 | — | — | EP | disclosed |
| US-20030059550-A1 | Method of film formation, insulating film, and substrate for semiconductor | JSR CORPORATION (JP) | 2003-03-27 | — | — | US | disclosed |
| US-20030059628-A1 | Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor | JSR CORPORATION (JP) | 2003-03-27 | — | — | US | disclosed |
| EP-1296365-A2 | Method of film formation, insulating film, and substrate for semiconductor | JSR Corporation (JP) | 2003-03-26 | — | — | EP | disclosed |
| EP-1295924-A2 | Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor | JSR Corporation (JP) | 2003-03-26 | — | — | EP | disclosed |
| US-6530708-B2 | Ink follower composition for oil-based ballpoint pens | MITSUBISHI PENCIL CO., LTD. (JP) | 2003-03-11 | — | — | US | disclosed |
| US-20030045607-A1 | Oil-based ballpoint pen ink composition and oil-based ballpoint pen | MITSUBISHI PENCIL CO., LTD. (JP) | 2003-03-06 | — | — | US | disclosed |
| EP-1266940-A9 | OIL-BASE INK COMPOSITION, WRITING UTENSILS AND DYES TO BE USED THEREIN | MITSUBISHI PENCIL Co., Ltd. (JP) | 2003-03-05 | — | — | EP | disclosed |
| US-6528605-B1 | Diyne-containing (co)polymer, processes for producing the same, and cured film | JSR CORPORATION (JP) | 2003-03-04 | — | — | US | disclosed |
| EP-1275704-A1 | OIL-BASED BALL-PEN INK COMPOSITION AND OIL-BASED BALL PEN | MITSUBISHI PENCIL Co., Ltd. (JP) | 2003-01-15 | — | — | EP | disclosed |
| US-20030008155-A1 | Method for the formation of silica film, silica film, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2003-01-09 | — | — | US | disclosed |
| US-6503633-B2 | Semiconductors | JSR CORPORATION (JP) | 2003-01-07 | — | — | US | disclosed |
| US-20020189495-A1 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2002-12-19 | — | — | US | disclosed |
| EP-1266661-A1 | ANTICANCER COMPOSITIONS | Orient Cancer Therapy Co. Ltd (JP) | 2002-12-18 | — | — | EP | disclosed |
| EP-1267395-A2 | Method for the formation of silica film, silica film, insulating film, and semiconductor device | JSR Corporation (JP) | 2002-12-18 | — | — | EP | disclosed |
| US-6495264-B2 | HYDROLYSIS AND CONDENSATION OF SILANE COMPOUND IN PRESENCE OF WATER AND TETRAALKYLAMMONIUM HYDROXIDES, ALICYCLIC AMINES, AND METAL HYDROXIDES IN SOLVENT FOR FORMING DIELECTRIC LAYER FOR SEMICONDUCTORS | JSR CORPORATION (JP) | 2002-12-17 | — | — | US | disclosed |
| US-20020172652-A1 | Composition for film formation and material for insulating film formation | JSR CORPORATION (JP) | 2002-11-21 | — | — | US | disclosed |
| EP-1256606-A2 | Pigment containing ink and production method thereof | CANON KABUSHIKI KAISHA (JP) | 2002-11-13 | — | — | EP | disclosed |
| EP-1254917-A1 | Polymer comprising acetylene repeating units, process for the production, composition for film formation containing the same, method of film formation and insulating film | JSR Corporation (JP) | 2002-11-06 | — | — | EP | disclosed |
| US-20020159821-A1 | Ink follower composition for oil-based ballpoint pens | MITSUBISHI PENCIL CO., LTD. | 2002-10-31 | — | — | US | disclosed |
| US-20020161173-A1 | Polymer, process for production, composition for film formation containing the same, method of film formation, and insulating film | JSR CORPORATION (JP) | 2002-10-31 | — | — | US | disclosed |
| EP-1253175-A2 | Composition for film formation, method of film formation, and silica-based film | JSR Corporation (JP) | 2002-10-30 | — | — | EP | disclosed |
| US-6472079-B2 | PRODUCT OF HYDROLYSIS AND CONDENSATION OF AN ORGANOSILICON COMPOUND; 1A OR 2A COMPOUND, ESPECIALLY CARBOXYLIC SALT; SOLVENT; EXCELLENT CRACKING RESISTANCE AFTER A PCT (PRESSURE COOKER TEST). | JSR CORPORATION (JP) | 2002-10-29 | — | — | US | disclosed |
| US-6468589-B2 | A HEAT-CURED POLYETHER BASED ON A 9,9-BIS(P-HYDROXYPHENYL)-FLUORENE HAVING AT LEAST ONE ALKYL SUBSTITUENT AND A DIHYDROXY AROMATIC COMONOMER; LOW DIELECTRIC PROTECTIVE COATINGS; HEAT RESISTANCE; NONCRACKING | JSR CORPORATION (JP) | 2002-10-22 | — | — | US | disclosed |
| US-6465368-B2 | DISSOLVING POLYMER IN SOLVENT; FORMING DIELECTRIC FILMS | JSR CORPORATION (JP) | 2002-10-15 | — | — | US | disclosed |
| EP-0844283-B1 | Curable resin composition and cured products | JSR CORP (JP) | 2002-10-09 | — | — | EP | disclosed |
| US-20020142586-A1 | Method of forming dual damascene structure | JSR CORPORATION (JP) | 2002-10-03 | — | — | US | disclosed |
| US-20020139280-A1 | Ballpoint pen oil-based ink composition and ballpoint pens | MITSUBISHI PENCIL CO., LTD. | 2002-10-03 | — | — | US | disclosed |
| EP-1245638-A1 | Composition for insulating film formation | JSR Corporation (JP) | 2002-10-02 | — | — | EP | disclosed |
| EP-1246239-A1 | Method of forming dual damascene structure | JSR Corporation (JP) | 2002-10-02 | — | — | EP | disclosed |
| US-6436176-B1 | STORAGE STABLE; AMPHOTERIC SILICATE OF METAL SURFACE BONDED SILICA AS TRANSPARENT PIGMENT, PHOSPHATE SALT SUCH AS SODIUM DIHYDROGEN PHOSPHATE AND WATER SOLUBLE ORGANIC SOLVENT SUCH AS DIPROPYLENE GLYCOL | AGFA-GEVAERT (BE) | 2002-08-20 | — | — | US | disclosed |
| US-20020086167-A1 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2002-07-04 | — | — | US | disclosed |
| US-6413647-B1 | USEFUL AS INTERLAYER DIELECTRIC FILM IN SEMICONDUCTOR DEVICES; MECHANICAL STRENGTH | JSR CORPORATION (JP) | 2002-07-02 | — | — | US | disclosed |
| US-6410150-B1 | Composition for film formation, method of film formation, and insulating film | JSR CORPORATION (JP) | 2002-06-25 | — | — | US | disclosed |
| US-6410151-B1 | Composition for film formation, method of film formation, and insulating film | JSR CORPORATION (JP) | 2002-06-25 | — | — | US | disclosed |
| US-6406794-B1 | POLYETHERSILOXANE COPOLYMER | JSR CORPORATION (JP) | 2002-06-18 | — | — | US | disclosed |
| US-6398441-B1 | ORGANIC SOLVENT SELECTED FROM THE GROUP CONSISTING OF ALCOHOLS AND GLYCOL ETHERS, A RESIN AND A COLORANT; SPECTRAL REFLECTANCE IS 20% OR MORE IN A LONGER WAVELENGTH AREA THAN 620 NM | MITSUBISHI PENCIL KABUSHIKI KAISHA (JP) | 2002-06-04 | — | — | US | disclosed |
| US-20020064953-A1 | Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing | JSR CORPORATION (JP) | 2002-05-30 | — | — | US | disclosed |
| US-6376634-B1 | ORGANOSILICON POLYMERS | JSR CORPORATION (JP) | 2002-04-23 | — | — | US | disclosed |
| US-20020045693-A1 | Composition for film formation, method of film formation and silica-based film | JSR CORPORATION (JP) | 2002-04-18 | — | — | US | disclosed |
| EP-1188807-A2 | Chemical mechanical polishing stopper film, process for producing the same, and method of chemical mechanical polishing | JSR Corporation (JP) | 2002-03-20 | — | — | EP | disclosed |
| US-20020020327-A1 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2002-02-21 | — | — | US | disclosed |
| US-20010055892-A1 | Composition for film formation, process for producing composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2001-12-27 | — | — | US | disclosed |
| US-20010051446-A1 | Method of manufacturing insulating film-forming material, the insulating film-forming material, and insulating film | JSR CORPORATION (JP) | 2001-12-13 | — | — | US | disclosed |
| EP-1160848-A2 | Composition for silica-based film formation | JSR Corporation (JP) | 2001-12-05 | — | — | EP | disclosed |
| US-6313233-B1 | CAN BE CURED AND FABRICATED WITHOUT PRODUCING NO CRACKS INTO A CURED PRODUCT SUCH AS A SEMICONDUCTOR DEVICE HAVING A LOW DIELECTRIC CONSTANT, HIGH HEAT RESISTANCE AND MOISTURE RESISTANCE, SUPERIOR ADHESION TO VARIOUS SUBSTRATE MATERIALS | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 2001-11-06 | — | — | US | disclosed |
| US-6309696-B1 | SUBLIMATION HEAT SENSITIVE ELEMENTS | RICOH COMPANY, LTD. (JP) | 2001-10-30 | — | — | US | disclosed |
| EP-1148105-A2 | Composition for film formation, method of film formation, and silica-based film | JSR Corporation (JP) | 2001-10-24 | — | — | EP | disclosed |
| EP-1146092-A2 | Composition for film formation, method of film formation, and silica-based film | JSR Corporation (JP) | 2001-10-17 | — | — | EP | disclosed |
| US-20010018129-A1 | Process for producing silica-based film, silica-based film, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2001-08-30 | — | — | US | disclosed |
| EP-1127929-A2 | Composition for film formation, method of film formation, and silica-based film | JSR Corporation (JP) | 2001-08-29 | — | — | EP | disclosed |
| US-20010012870-A1 | Composition for film formation and insulating film | JSR CORPORATION (JP) | 2001-08-09 | — | — | US | disclosed |
| EP-1122746-A1 | Composition for film formation and insulating film | JSR Corporation (JP) | 2001-08-08 | — | — | EP | disclosed |
| EP-1122770-A2 | Silica-based insulating film and its manufacture | JSR Corporation (JP) | 2001-08-08 | — | — | EP | disclosed |
| US-20010009936-A1 | Method of manufacturing material for forming insulating film | JSR CORPORATION (JP) | 2001-07-26 | — | — | US | disclosed |
| EP-1117102-A2 | Method of manufacturing material for forming insulating film | JSR Corporation (JP) | 2001-07-18 | — | — | EP | disclosed |
| EP-1099719-A1 | Diyne-containing (co) polymer, processes for producing the same, and cured film | JSR Corporation (JP) | 2001-05-16 | — | — | EP | disclosed |
| EP-1090967-A2 | Composition for film formation, method of film formation, and insulating film | JSR Corporation (JP) | 2001-04-11 | — | — | EP | disclosed |
| EP-1088868-A2 | Composition for film formation, method of film formation, and insulating film | JSR Corporation (JP) | 2001-04-04 | — | — | EP | disclosed |
| US-6204222-B1 | SUITABLE AS HERBICIDES AND FOR DESICCATION/DEFOLIATION OF PLANTS | BASF AKTIENGESELLSCHAFT (DE) | 2001-03-20 | — | — | US | disclosed |
| US-6165691-A | Method for lithographic printing by use of a lithographic printing plate provided by a heat sensitive non-ablatable wasteless imaging element and a fountain containing water-insoluble compounds | AGFA-GEVAERT, N.V. (BE) | 2000-12-26 | — | — | US | disclosed |
| EP-1058274-A1 | Composition for film formation and material for insulating film formation | JSR Corporation (JP) | 2000-12-06 | — | — | EP | disclosed |
| EP-1045290-A2 | Composition for resist underlayer film and method for producing the same | JSR Corporation (JP) | 2000-10-18 | — | — | EP | disclosed |
| US-6051629-A | FOR OSMOTIC SEALS, STAMP PADS OR VERMILLION INKPADS; GLYCOL ETHERS, GLYCOL ETHER ACETATES, OR ESTERS OF GIVEN SOLUBILITY PARAMETER AND VAPOR PRESSURE; COLORANT, LOW SOLUBILITY RESIN AND FLUORINATED SURFACTANT; STAMPS WATER REPELLENT SURFACES | MITSUBISHI PENCIL KABUSHIKI KAISHA (JP) | 2000-04-18 | — | — | US | disclosed |
| US-6048914-A | INKS FOR WRITING INSTRUMENTS AND ORGANIC SOLVENTS, COLORS, ETHANOL AND SURFACTANTS | MITSUBISHI PENCIL KABUSHIKI KAISHA (JP) | 2000-04-11 | — | — | US | disclosed |
| US-6046132-A | USEFUL FOR MULTIPLE SUBLIMATION THERMAL TRANSFER RECORDING WHICH CAN MAINTAIN GOOD IMAGE QUALITIES SUCH AS HIGH IMAGE DENSITY AND THE GOOD HALF TONE IMAGES WITHOUT DIFFERENCE OF HUE WHEN THE IMAGE RECORDING MATERIAL IS REPEATEDLY | RICOH COMPANY, LTD. (JP) | 2000-04-04 | — | — | US | disclosed |
| US-6011123-A | ORGANOSILANE COMPOUND; POLYAMIC ACIDS HAVING A HYDROLYZABLE SILYL GROUP OR CARBOXYLIC ACID ANHYDRIDE GROUP, OR BOTH, AND POLYIMIDES HAVING A HYDROLYZABLE SILYL GROUP OR CARBOXYLIC ACID ANHYDRIDE GROUP, OR BOTH. | JSR CORPORATION (JP) | 2000-01-04 | — | — | US | disclosed |
| US-5985791-A | COMPRISING A SUPPORT, AND THERMOSENSITIVE RECORDING LAYER CONTAINING AN ELECTRON-DONATING COLORING COMPOUND, AN ELECTRON-ACCEPTING COMPOUND, A BINDER RESIN, A LIQUID RESIN WHICH IS IN A LIQUID STATE AT ROOM TEMPERATURE, AND A | RICOH COMPANY, LTD (JP) | 1999-11-16 | — | — | US | disclosed |
| US-5980624-A | FOR INK JETS, PENS, STAMPS; DRYING PROPERTY | MITSUBISHI PENCIL KABUSHIKI KAISHA (JP) | 1999-11-09 | — | — | US | disclosed |
| US-5959000-A | POLYMERIZING A POLYMERIZABLE MONOMER CONTAINING A CONJUGATE DIENE COMPOUND IN A SOLVENT CONTAINING WATER IN THE PRESENCE OF A DYE AND A SURFACTANT. | MITSUBISHI PENCIL KABUSHIKI KAISHA (JP) | 1999-09-28 | — | — | US | disclosed |
| EP-0924102-A1 | A method for lithographic printing by use of a lithographic printing plate provided by a heat sensitive non-ablatable wasteless imaging element and a fountain containing water-insoluble compounds | AGFA-GEVAERT N.V. (BE) | 1999-06-23 | — | — | EP | disclosed |
| EP-0754565-B1 | A concentrated dampening solution with an improved anti-staining activity for printing with a lithographic printing plate obtained according to the silver salt diffusion transfer process | AGFA GEVAERT NV (BE) | 1999-06-16 | — | — | EP | disclosed |
| EP-0637298-B1 | SUBSTITUTED CYCLOHEXENE-1,2-BICARBOXYLIC ACID DERIVATIVES AND RAW MATERIALS FOR PRODUCING THEM | BASF AG (DE) | 1999-03-31 | — | — | EP | disclosed |
| EP-0745901-B1 | A concentrated dampening solution with an improved shelf life for printing with a lithographic printing plate obtained according to the silver salt diffusion transfer process | AGFA GEVAERT NV (BE) | 1999-03-17 | — | — | EP | disclosed |
| EP-0655652-B1 | A method for lithographic printing using a plate prepared according to the silver salt diffusion transfer process and a dampening solution | AGFA GEVAERT NV (BE) | 1999-02-17 | — | — | EP | disclosed |
| US-5817603-A | HERBICIDES | BASF AKTIENGESELLSCHAFT (DE) | 1998-10-06 | — | — | US | disclosed |
| EP-0707980-B1 | A dampening solution for printing with a lithographic printing plate and a method for printing therewith | AGFA GEVAERT NV (BE) | 1998-06-17 | — | — | EP | disclosed |
| EP-0844283-A1 | Curable resin composition and cured products | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1998-05-27 | — | — | EP | disclosed |
| US-5679254-A | ADDING NONIONIC SURFACTANT TO AQUEOUS SALT SOLUTION TO FORM HOMOGENEOUS MIXTURE HAVING FIRST CLOUD POINT, ADJUSTING TEMPERATURE TO CAUSE PHASE SEPARATION, SEPARATING SALT-FREE PHASE, ADJUSTING TEMPERATURE AGAIN TO SEPARATE SURFACTANT | CHEMTURA CORPORATION | 1997-10-21 | — | — | US | disclosed |
| US-5658713-A | STORAGE STABILITY | AGFA-GEVAERT, N.V. (BE) | 1997-08-19 | — | — | US | disclosed |
| US-5602074-A | HERBICIDES; PLANT DESICCATION, DEFOLIATION | BASF AKTIENGESELLSCHAFT (DE) | 1997-02-11 | — | — | US | disclosed |
| EP-0754565-A1 | A concentrated dampening solution with an improved anti-staining activity for printing with a lithographic printing plate obtained according to the silver salt diffusion transfer process | AGFA-GEVAERT N.V. (BE) | 1997-01-22 | — | — | EP | disclosed |
| US-5587271-A | DAMPING SOLUTION CONTAINS CLAY INCORPORATING INORGANIC POLYPHOSPHATE PEPTISER | AGFA-GEVAERT, N.V. (BE) | 1996-12-24 | — | — | US | disclosed |
| EP-0745901-A1 | A concentrated dampening solution with an improved shelf life for printing with a lithographic printing plate obtained according to the silver salt diffusion transfer process | AGFA-GEVAERT N.V. (BE) | 1996-12-04 | — | — | EP | disclosed |
| EP-0707980-A1 | A dampening solution for printing with a lithographic printing plate and a method for printing therewith | AGFA-GEVAERT N.V. (BE) | 1996-04-24 | — | — | EP | disclosed |
| EP-0655652-A1 | A method for lithographic printing using a plate prepared according to the silver salt diffusion transfer process and a dampening solution | AGFA-GEVAERT N.V. (BE) | 1995-05-31 | — | — | EP | disclosed |
| EP-0641321-A1 | SUBSTITUTED ISOINDOLONES | BASF Aktiengesellschaft (DE) | 1995-03-08 | — | — | EP | disclosed |
| EP-0637298-A1 | SUBSTITUTED CYCLOHEXENE-1,2-BICARBOXYLIC ACID DERIVATIVES AND RAW MATERIALS FOR PRODUCING THEM | BASF Aktiengesellschaft (DE) | 1995-02-08 | — | — | EP | disclosed |
| US-5271858-A | Field dependent fluids containing electrically conductive tin oxide coated materials | ENSCI INC. (US) | 1993-12-21 | — | — | US | disclosed |
| WO-1993024456-A1 | SUBSTITUTED ISOINDOLONES | BASF AKTIENGESELLSCHAFT (DE) | 1993-12-09 | — | — | WO | disclosed |
| WO-1993022280-A1 | SUBSTITUTED CYCLOHEXENE-1,2-BICARBOXYLIC ACID DERIVATIVES AND RAW MATERIALS FOR PRODUCING THEM | BASF AKTIENGESELLSCHAFT (DE) | 1993-11-11 | — | — | WO | disclosed |
| US-5163999-A | Free of isopropanol | FUJI PHOTO FILM CO., LTD. (JP) | 1992-11-17 | — | — | US | disclosed |
| EP-0416861-A1 | Dampening solution composition for lithographic printing | FUJI PHOTO FILM CO., LTD. (JP) | 1991-03-13 | — | — | EP | disclosed |
| US-4567213-A | LOW WATER CONTENT | VIDEOJET SYSTEMS INTERNATIONAL, INC. (US) | 1986-01-28 | — | — | US | disclosed |
| US-4465800-A | CONTAINING PHENOLIC RESOLE RESIN, TRIARYLMETHANE DYE, AMINE SALT IN ALKANOL | A. B. DICK COMPANY (US) | 1984-08-14 | — | — | US | disclosed |
| US-4190727-A | CORROSION INHIBITORS IN DRILLING FLUIDS | PETROLITE CORPORATION (US) | 1980-02-26 | — | — | US | disclosed |
| US-4024096-A | NOVOLAC RESIN, ALCOHOL, GLYCOL ETHER OR ESTER | A. B. DICK COMPANY (US) | 1977-05-17 | — | — | US | disclosed |
| US-4024096-A | NOVOLAC RESIN, ALCOHOL, GLYCOL ETHER OR ESTER | A. B. DICK COMPANY (US) | 1977-05-17 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (50 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20170131632-A1 | ACID DIFFUSION CONTROL AGENT, RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD | RER1, RFC4, RFC2 | ALDH1A1 2000/4885TSHR 2622/4885MAPK1 2314/4885 |
| US-20260077385-A1 | FILM FORMING METHOD, CURABLE COMPOSITION, AND ARTICLE MANUFACTURING METHOD | EEF1D, RHOA, YWHAH | ALDH1A1 4238/4885TSHR 4527/4885MAPK1 4588/4885 |
| US-20140363769-A1 | PHOTORESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, ACID GENERATING AGENT, AND PHOTODEGRADABLE BASE | FRG1, FGFR1, IGF1R | ALDH1A1 435/4885TSHR 1869/4885MAPK1 863/4885 |
| US-20150159045-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING SULFONE STRUCTURE AND AMINE STRUCTURE | SETDB1, SMC1A, KDM1A | ALDH1A1 480/4885TSHR 4478/4885MAPK1 1888/4885 |
| US-20190094695-A1 | COMPOSITION FOR FILM FORMATION, FILM, RESIST UNDERLAYER FILM-FORMING METHOD, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND | RER1, TOP1, RIF1 | ALDH1A1 1845/4885TSHR 3221/4885MAPK1 2366/4885 |
| US-20260016747-A1 | RESIST COMPOSITION AND METHOD OF FORMING PATTERN BY USING THE SAME | SMARCC1, RER1, SMARCC2 | ALDH1A1 2922/4885TSHR 2096/4885MAPK1 751/4885 |
| US-11709425-B2 | Resist composition and method of forming resist pattern | RER1, RRS1, RXFP4 | ALDH1A1 3475/4885TSHR 1323/4885MAPK1 905/4885 |
| US-20240317672-A1 | POLYCARBOXYLATE COMPOUND, RESIST COMPOSITION COMPRISING THE SAME AND METHOD OF FORMING PATTERN USING THE SAME | SLC16A1, SLC11A2, ASS1 | ALDH1A1 437/4885TSHR 4184/4885MAPK1 3540/4885 |
| US-20150322212-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM HAVING CYCLIC DIESTER GROUP | ASH2L, SRRM2, CCNT1 | ALDH1A1 2432/4885TSHR 4197/4885MAPK1 4087/4885 |
| US-11366389-B2 | Allyloxy derivative, resist underlayer forming composition using the same, and method of manufacturing resist underlayer and semiconductor device using the same | ALKBH1, ALKBH2, OR10J3 | ALDH1A1 1535/4885TSHR 4804/4885MAPK1 3757/4885 |
| US-20240201588-A1 | ORGANIC SALT, PHOTORESIST COMPOSITION INCLUDING THE SAME, AND PATTERN FORMATION METHOD USING THE SAME | OR10J3, RER1, S100A11 | ALDH1A1 1564/4885TSHR 3805/4885MAPK1 624/4885 |
| US-20120276482-A1 | RADIATION SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING A PATTERN, POLYMER AND COMPOUND | RAD51, MRE11, RER1 | ALDH1A1 1414/4885TSHR 4589/4885MAPK1 2744/4885 |
| US-12585189-B2 | Method for manufacturing cured film and use of the same | C9, RAD51, VCL | ALDH1A1 2688/4885TSHR 2990/4885MAPK1 2708/4885 |
| US-20160370700-A1 | PHOTORESIST COMPOSITION, COMPOUND, AND PRODUCTION METHOD THEREOF | RARA, H1-0, NR2E3 | ALDH1A1 1014/4885TSHR 740/4885MAPK1 1757/4885 |
| US-20240327338-A1 | ORGANIC SALT, RESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN USING THE SAME | S100A11, SLC11A2, RER1 | ALDH1A1 391/4885TSHR 2600/4885MAPK1 1074/4885 |
| US-20250347994-A1 | RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME | S100A11, SLC11A2, RBM14 | ALDH1A1 2613/4885TSHR 3462/4885MAPK1 1046/4885 |
| US-20110313122-A1 | BORAZINE-BASED RESIN, PROCESS FOR ITS PRODUCTION, BORAZINE-BASED RESIN COMPOSITION, INSULATING FILM AND METHOD FOR ITS FORMATION | GRIK5, GJA1, SLC9A5 | ALDH1A1 2955/4885TSHR 3288/4885MAPK1 2243/4885 |
| US-10073349-B2 | Chemically amplified resist material, pattern-forming method, compound, and production method of compound | RER1, POLR1A, FEM1B | ALDH1A1 1044/4885TSHR 3053/4885MAPK1 3503/4885 |
| US-20250102906-A1 | ORGANOMETALLIC COMPOUND, RESIST COMPOSITION INCLUDING THE SAME AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | PRMT1, RER1, RCOR1 | ALDH1A1 1815/4885TSHR 4096/4885MAPK1 2887/4885 |
| US-11117996-B2 | Self-assembly composition for pattern formation and pattern forming method | IAPP, SAMM50, MAN1B1 | ALDH1A1 2584/4885TSHR 4339/4885MAPK1 2071/4885 |
| US-20260010070-A1 | RESIST COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME | CCNA1, POT1, RIF1 | ALDH1A1 2240/4885TSHR 690/4885MAPK1 1138/4885 |
| US-10090163-B2 | Inorganic film-forming composition for multilayer resist processes, and pattern-forming method | HCAR1, HSD17B7, BMPR1A | ALDH1A1 749/4885TSHR 1437/4885MAPK1 3594/4885 |
| US-20260110966-A1 | POLYMER, RESIST COMPOSITION INCLUDING THE SAME, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION | RER1, SMC2, SMC1A | ALDH1A1 3782/4885TSHR 2047/4885MAPK1 1908/4885 |
| US-20120258402-A1 | PHOTORESIST COMPOSITION, RESIST-PATTERN FORMING METHOD, POLYMER, AND COMPOUND | FRG1, NPY4R, RER1 | ALDH1A1 2682/4885TSHR 2050/4885MAPK1 1971/4885 |
| US-20260042932-A1 | COMPOSITION, PATTERN FORMING METHOD, AND ARTICLE MANUFACTURING METHOD | SMCHD1, PIM1, PIM2 | ALDH1A1 4758/4885TSHR 4809/4885MAPK1 2201/4885 |
| US-12559637-B2 | Coloring tablet and water-based ink composition for writing instrument using the same | ARG1, SLC6A12, COL1A1 | ALDH1A1 1105/4885TSHR 3871/4885MAPK1 1004/4885 |
| US-11003079-B2 | Composition for film formation, film, resist underlayer film-forming method, production method of patterned substrate, and compound | RER1, TOP1, RIF1 | ALDH1A1 1845/4885TSHR 3221/4885MAPK1 2366/4885 |
| US-20120315765-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING | SRSF1, SRSF7, SRRM2 | ALDH1A1 2272/4885TSHR 3940/4885MAPK1 4354/4885 |
| US-20260126725-A1 | CURABLE COMPOSITION AND METHODS FOR FORMING FILM AND MANUFACTURING ARTICLE | ATM, ATR, PIEZO1 | ALDH1A1 3970/4885TSHR 4373/4885MAPK1 2381/4885 |
| US-20150364332-A1 | INORGANIC FILM-FORMING COMPOSITION FOR MULTILAYER RESIST PROCESSES, AND PATTERN-FORMING METHOD | HCAR1, HSD17B7, BMPR1A | ALDH1A1 749/4885TSHR 1437/4885MAPK1 3594/4885 |
| US-20150323866-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, POLYMER, AND METHOD FOR PRODUCING COMPOUND | RER1, RPA1, RFT1 | ALDH1A1 1025/4885TSHR 2997/4885MAPK1 1038/4885 |
| US-20260118764-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM | SRSF1, MACF1, SRPK1 | ALDH1A1 3642/4885TSHR 4084/4885MAPK1 2597/4885 |
| US-11126084-B2 | Composition for resist underlayer film formation, resist underlayer film and forming method thereof, production method of patterned substrate, and compound | EMG1, FN1, TOP1 | ALDH1A1 849/4885TSHR 4580/4885MAPK1 2804/4885 |
| US-20150079520-A1 | ACID DIFFUSION CONTROL AGENT, RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD | RER1, RFC4, RFC2 | ALDH1A1 2000/4885TSHR 2622/4885MAPK1 2314/4885 |
| US-20210181636-A1 | ALLYLOXY DERIVATIVE, RESIST UNDERLAYER FORMING COMPOSITION USING THE SAME, AND METHOD OF MANUFACTURING RESIST UNDERLAYER AND SEMICONDUCTOR DEVICE USING THE SAME | ALKBH1, ALKBH2, OR10J3 | ALDH1A1 1535/4885TSHR 4804/4885MAPK1 3757/4885 |
| US-20120070994-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING SULFIDE BOND | SMC3, SRSF3, SRSF9 | ALDH1A1 3278/4885TSHR 2660/4885MAPK1 4589/4885 |
| US-10131860-B2 | Dialkyl polysulfide, process for preparing dialkyl polysulfide, extreme pressure additive, and lubricating fluid composition | RPS21, MUC1, RPL21 | ALDH1A1 1796/4885TSHR 3907/4885MAPK1 1121/4885 |
| US-20220100092-A1 | FILM FORMING COMPOSITION | FN1, CDH1, EPCAM | ALDH1A1 2938/4885TSHR 4316/4885MAPK1 2249/4885 |
| US-20110143149-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP | SRR, KDM2B, MSR1 | ALDH1A1 3585/4885TSHR 1944/4885MAPK1 4165/4885 |
| US-20250291247-A1 | AMINE COMPOUND, RESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN BY USING THE RESIST COMPOSITION | RER1, FEM1B, PRMT1 | ALDH1A1 1380/4885TSHR 2312/4885MAPK1 2704/4885 |
| US-11561472-B2 | Radiation sensitive composition | RER1, RAD1, RAD51 | ALDH1A1 2201/4885TSHR 3691/4885MAPK1 2685/4885 |
| US-20110073977-A1 | AMINO ACID GENERATOR AND POLYSILOXANE COMPOSITION CONTAINING THE SAME | DAO, BCAT1, BCAT2 | ALDH1A1 1257/4885TSHR 4642/4885MAPK1 1346/4885 |
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“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.