Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ESR1 | P03372 | 10/20 | 0.76 |
| ▸ | ESR2 | Q92731 | 9/20 | 0.76 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.76 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.76 |
| ▸ | HPGD | P15428 | 2/20 | 0.76 |
| ▸ | AR | P10275 | 1/20 | 0.76 |
| ▸ | TSHR | P16473 | 1/20 | 0.76 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.76 |
| ▸ | SLC6A4 | P31645 | 1/20 | 0.76 |
| ▸ | HTR6 | P50406 | 1/20 | 0.76 |
| ▸ | ESRRG | P62508 | 1/20 | 0.76 |
| ▸ | SLC6A3 | Q01959 | 1/20 | 0.76 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.64 |
| ▸ | CA3 | P07451 | 1/20 | 0.62 |
| ▸ | THRB | P10828 | 1/20 | 0.62 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.62 |
| ▸ | CA6 | P23280 | 1/20 | 0.62 |
| ▸ | CASP1 | P29466 | 1/20 | 0.62 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.62 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.62 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Bisphenol A SCHEMBL28319737 | 0.94 | ESR1 (0.67) | ESR1ESR2CYP3A4HSD17B10HPGD | |
| Bisphenol A SCHEMBL27861385 | 0.90 | ESR1 (0.61) | ESR1ESR2CYP3A4HSD17B10HPGD | |
| Bisphenol A SCHEMBL10008975 | 0.89 | ESR1 (0.76) | ESR1ESR2CYP3A4HSD17B10HPGD | |
| Bisphenol A SCHEMBL584084 | 0.87 | ESR1 (0.89) | ESR1ESR2CYP3A4HSD17B10HPGD | |
| Bisphenol A SCHEMBL9774987 | 0.87 | ESR1 (1.00) | ESR1ESR2CYP3A4HSD17B10HPGD | |
| Bisphenol A SCHEMBL3170263 | 0.87 | ESR1 (1.00) | ESR1ESR2CYP3A4HSD17B10HPGD | |
| Bisphenol A SCHEMBL8058731 | 0.87 | ESR1 (1.00) | ESR1ESR2CYP3A4HSD17B10HPGD | |
| SCHEMBL27996 | 0.87 | ESR1 (1.00) | ESR1ESR2CYP3A4HSD17B10HPGD | |
| SCHEMBL15868669 | 0.87 | ESR1 (1.00) | ESR1ESR2CYP3A4HSD17B10HPGD | |
| Bisphenol A SCHEMBL31267162 | 0.87 | ESR1 (1.00) | ESR1ESR2CYP3A4HSD17B10HPGD |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1294 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1521794-B1 | WEATHERABLE POLYCARBONATES COMPRISING OXANILIDE STRUCTURAL UNITS, METHOD, AND ARTICLES MADE THEREFROM | SABIC INNOVATIVE PLASTICS IP (NL) | 2010-01-06 | — | — | EP | claimed |
| CN-100366659-C | Weather-resistant polycarbonate containing oxanilide structural unit, manufacturing method thereof and product prepared from same | GEN ELECTRIC (US) | 2008-02-06 | — | — | CN | claimed |
| US-7153630-B2 | Resist with reduced line edge roughness | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2006-12-26 | — | — | US | claimed |
| US-20060078820-A1 | Resist with reduced line edge roughness | MASS INSTITUTE OF TECHNOLOGY (MIT) (US) | 2006-04-13 | — | — | US | claimed |
| CN-1668670-A | Weather-resistant polycarbonate containing oxanilide structural unit, manufacturing method thereof and product prepared from same | GEN ELECTRIC (US) | 2005-09-14 | — | — | CN | claimed |
| EP-1521794-A1 | WEATHERABLE POLYCARBONATES COMPRISING OXANILIDE STRUCTURAL UNITS, METHOD, AND ARTICLES MADE THEREFROM | GENERAL ELECTRIC COMPANY (US) | 2005-04-13 | — | — | EP | claimed |
| WO-2004005372-A1 | WEATHERABLE POLYCARBONATES COMPRISING OXANILIDE STRUCTURAL UNITS, METHOD, AND ARTICLES MADE THEREFROM | GENERAL ELECTRIC COMPANY (US) | 2004-01-15 | — | — | WO | claimed |
| US-20030036015-A1 | Resist with reduced line edge roughness | AIR FORCE, UNITED STATES | 2003-02-20 | — | — | US | claimed |
| WO-2002091084-A2 | RESIST WITH REDUCED LINE EDGE ROUGHNESS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2002-11-14 | — | — | WO | claimed |
| US-20020161164-A1 | WEATHERABLE POLYCARBONATES COMPRISING OXANILIDE STRUCTURAL UNITS, METHOD, AND ARTICLES MADE THEREFROM | GENERAL ELECTRIC COMPANY | 2002-10-31 | — | — | US | claimed |
| US-6462168-B1 | POLYCARBONATE COMPOSITIONS OF ULTRAVIOLET ABSORBING COMPOUNDS TO PREVENT PHOTOYELLOWING | GENERAL ELECTRIC COMPANY | 2002-10-08 | — | — | US | claimed |
| US-5731125-A | FOR FORMING RESIST FILM | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1998-03-24 | — | — | US | claimed |
| EP-0558280-A1 | Chemically amplified resist | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1993-09-01 | — | — | EP | claimed |
| EP-0523957-A1 | Radiation-sensitive composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1993-01-20 | — | — | EP | claimed |
| US-5079331-A | Sealing electronic devices such as semiconductors, polyepoxides, hardeners | MITSUI TOATSU CHEMICAL, INC. (JP) | 1992-01-07 | — | — | US | claimed |
| EP-0400898-A2 | Heat resistant epoxy resin composition | MITSUI TOATSU CHEMICALS, Inc. (JP) | 1990-12-05 | — | — | EP | claimed |
| US-4654401-A | SOLVENT RESISTANCE, HIGH IMPACT STRENGTH MOLDING MATERIAL | GENERAL ELECTRIC COMPANY (US) | 1987-03-31 | — | — | US | claimed |
| US-4632962-A | USING IN MAKING MODIFIED POLYESTERS, POLYCARBONATES | GENERAL ELECTRIC COMPANY (US) | 1986-12-30 | — | — | US | claimed |
| EP-0186060-A2 | Hydroxyl group graft modified polyolefins | GENERAL ELECTRIC COMPANY (US) | 1986-07-02 | — | — | EP | claimed |
| JP-8081556-A | — | — | None | — | — | JP | disclosed |
| JP-6172273-A | — | — | None | — | — | JP | disclosed |
| JP-3000725-A | — | — | None | — | — | JP | disclosed |
| JP-58177945-A | — | — | None | — | — | JP | disclosed |
| JP-62010051-A | — | — | None | — | — | JP | disclosed |
| JP-2147621-A | — | — | None | — | — | JP | disclosed |
| JP-3041067-A | — | — | None | — | — | JP | disclosed |
| JP-57045092-A | — | — | None | — | — | JP | disclosed |
| JP-62145063-A | — | — | None | — | — | JP | disclosed |
| JP-3000724-A | — | — | None | — | — | JP | disclosed |
| JP-10310564-A | — | — | None | — | — | JP | disclosed |
| JP-4328121-A | — | — | None | — | — | JP | disclosed |
| JP-3231916-A | — | — | None | — | — | JP | disclosed |
| US-12547072-B2 | Self-aligned build-up processing | GEMINATIO, INC. (US) | 2026-02-10 | — | — | US | disclosed |
| US-20250336673-A1 | METHODS FOR SUBSTRATE PATTERNING PROCESS | TOKYO ELECTRON LTD (JP) | 2025-10-30 | — | — | US | disclosed |
| US-20250314970-A1 | OVERCOAT COMPOSITION AND PATTERNING METHODS | TOKYO ELECTRON LTD (JP) | 2025-10-09 | — | — | US | disclosed |
| US-20250314968-A1 | SELF-ALIGNED DOUBLE PATTERNING USING METAL-BASED RESIST | TOKYO ELECTRON LTD (JP) | 2025-10-09 | — | — | US | disclosed |
| US-20250314969-A1 | SELF-ALIGNED DOUBLE PATTERNING USING METAL-BASED RESIST | TOKYO ELECTRON LTD (JP) | 2025-10-09 | — | — | US | disclosed |
| US-12386261-B2 | In-resist process for high density contact formation | GEMINATIO, INC. (US) | 2025-08-12 | — | — | US | disclosed |
| US-12372867-B2 | Photoresists comprising multiple acid generator compounds | DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC (US) | 2025-07-29 | — | — | US | disclosed |
| US-20250233019-A1 | MULTI-LEVEL SELECTIVE PATTERNING FOR STACKED DEVICE CREATION | GEMINATIO, INC. (US) | 2025-07-17 | — | — | US | disclosed |
| US-20250216782-A1 | MASKING PROCESS USING SWITCHABLE POLYMER | TOKYO ELECTRON LTD (JP) | 2025-07-03 | — | — | US | disclosed |
| US-20250216763-A1 | ANTI-SPACER MASKING PROCESS USING RESIST LAYER WITH SOLUBILITY SHIFTING AGENT | TOKYO ELECTRON LTD (JP) | 2025-07-03 | — | — | US | disclosed |
| US-20250216790-A1 | MATERIALS AND METHODS FOR FORMING PATTERNED MASK ON SUBSTRATE | GEMINATIO, INC., | 2025-07-03 | — | — | US | disclosed |
| US-20250216783-A1 | ANTI-SPACER MASKING PROCESS USING SECOND SWITCHABLE POLYMER | TOKYO ELECTRON LTD (JP) | 2025-07-03 | — | — | US | disclosed |
| US-20250216784-A1 | IN-RESIST PROCESS FOR HIGH DENSITY CONTACT FORMATION | GEMINATIO, INC. (US) | 2025-07-03 | — | — | US | disclosed |
| US-20250218775-A1 | MATERIALS AND METHODS FOR FORMING PATTERNED MASK ON SUBSTRATE | GEMINATIO, INC. | 2025-07-03 | — | — | US | disclosed |
| US-12306538-B2 | Treatment liquid and pattern forming method | FUJIFILM CORPORATION (JP) | 2025-05-20 | — | — | US | disclosed |
| US-20250132207-A1 | OPTIMIZATION FOR LOCAL CHEMICAL EXPOSURE | GEMINATIO, INC. (US) | 2025-04-24 | — | — | US | disclosed |
| US-20250130501-A1 | ENHANCED FIELD STITCHING WITH CORRECTIVE CHEMISTRY | GEMINATIO, INC. (US) | 2025-04-24 | — | — | US | disclosed |
| US-20250132156-A1 | NARROW LINE CUT MASKING PROCESS | GEMINATIO, INC. (US) | 2025-04-24 | — | — | US | disclosed |
| US-20250132166-A1 | GENERATION OF MULTILINE ETCH SUBSTRATES | GEMINATIO, INC. (US) | 2025-04-24 | — | — | US | disclosed |
| US-12242193-B2 | Coating compositions for use with an overcoated photoresist | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2025-03-04 | — | — | US | disclosed |
| US-20250068064-A1 | ANTI-SPACER BASED SELF-ALIGNED HIGH ORDER PATTERNING | GEMINATIO, INC. (US) | 2025-02-27 | — | — | US | disclosed |
| CN-119330866-A | A photoacid generator Photoresist composition comprising the same | 湖北鼎龙控股股份有限公司 | 2025-01-21 | — | — | CN | disclosed |
| CN-119330920-A | Photoacid generator, resist composition and application thereof | 湖北鼎龙控股股份有限公司 | 2025-01-21 | — | — | CN | disclosed |
| US-20240419079-A1 | CHEMICALLY SELECTIVE ADHESION AND STRENGTH PROMOTERS IN SEMICONDUCTOR PATTERNING | GEMINATIO, INC. (US) | 2024-12-19 | — | — | US | disclosed |
| CN-119080661-A | Zwitterionic compounds Photoresist comprising the same | 罗门哈斯电子材料有限责任公司 | 2024-12-06 | — | — | CN | disclosed |
| US-20240404828-A1 | SELF-ALIGNED BUILD-UP PROCESSING | GEMINATIO, INC. (US) | 2024-12-05 | — | — | US | disclosed |
| US-20240377749-A1 | ASSISTED FEATURE PLACEMENT IN SEMICONDUCTOR PATTERNING | GEMINATIO, INC. (US) | 2024-11-14 | — | — | US | disclosed |
| US-12129335-B2 | Curable composition, cured product, and compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2024-10-29 | — | — | US | disclosed |
| CN-111033381-B | With overcoated photoresist coating composition for use together | 罗门哈斯电子材料韩国有限公司 | 2024-10-11 | — | — | CN | disclosed |
| CN-118251759-A | Multi-level selective patterning for stacked device creation | 杰米纳蒂奥公司 | 2024-06-25 | — | — | CN | disclosed |
| CN-118215986-A | Chemoselective adhesion and strength promoters in semiconductor patterning | 杰米纳蒂奥公司 | 2024-06-18 | — | — | CN | disclosed |
| CN-117941028-A | Self-aligned stacking method | 杰米纳蒂奥公司 | 2024-04-26 | — | — | CN | disclosed |
| CN-117941029-A | Self-aligned high-order patterning based on anti-spacer | 杰米纳蒂奥公司 | 2024-04-26 | — | — | CN | disclosed |
| CN-117916852-A | Assist feature placement in semiconductor patterning | 杰米纳蒂奥公司 | 2024-04-19 | — | — | CN | disclosed |
| CN-117916851-A | Enhanced field stitching with corrective chemistry | 杰米纳蒂奥公司 | 2024-04-19 | — | — | CN | disclosed |
| CN-117916854-A | Narrow line cutting mask method | 杰米纳蒂奥公司 | 2024-04-19 | — | — | CN | disclosed |
| CN-117916668-A | Optimization for localized chemical exposure | 杰米纳蒂奥公司 | 2024-04-19 | — | — | CN | disclosed |
| CN-117916853-A | Formation of a multi-line etched substrate | 杰米纳蒂奥公司 | 2024-04-19 | — | — | CN | disclosed |
| CN-117916855-A | In-resist process for forming high density contacts | 杰米纳蒂奥公司 | 2024-04-19 | — | — | CN | disclosed |
| US-11932713-B2 | Monomers, polymers and lithographic compositions comprising same | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2024-03-19 | — | — | US | disclosed |
| US-11880134-B2 | Salts and photoresists comprising same | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2024-01-23 | — | — | US | disclosed |
| US-20230418161-A1 | COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2023-12-28 | — | — | US | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-11822248-B2 | Coating compositions for use with an overcoated photoresist | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2023-11-21 | — | — | US | disclosed |
| CN-109856911-B | Salt and photoresist comprising the same | 罗门哈斯电子材料有限责任公司 | 2023-10-27 | — | — | CN | disclosed |
| WO-2023028249-A9 | ASSISTED FEATURE PLACEMENT IN SEMICONDUCTOR PATTERNING | GEMINATIO, INC. (US) | 2023-10-12 | — | — | WO | disclosed |
| US-11762292-B2 | Coating compositions for use with an overcoated photoresist | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2023-09-19 | — | — | US | disclosed |
| US-11681222-B2 | Fluorine-containing polymer, purification method, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2023-06-20 | — | — | US | disclosed |
| WO-2023076224-A9 | CHEMICALLY SELECTIVE ADHESION AND STRENGTH PROMOTORS IN SEMICONDUCTOR PATTERNING | GEMINATIO, INC. (US) | 2023-06-15 | — | — | WO | disclosed |
| WO-2023076251-A1 | MULTI-LEVEL SELECTIVE PATTERNING FOR STACKED DEVICE CREATION | GEMINATIO INC. (US) | 2023-05-04 | — | — | WO | disclosed |
| WO-2023076224-A1 | CHEMICALLY SELECTIVE ADHESION AND STRENGTH PROMOTORS IN SEMICONDUCTOR PATTERNING | GEMINATIO, INC. (US) | 2023-05-04 | — | — | WO | disclosed |
| WO-2023028223-A1 | OPTIMIZATION FOR LOCAL CHEMICAL EXPOSURE | GEMINATIO, INC. (US) | 2023-03-02 | — | — | WO | disclosed |
| WO-2023028244-A1 | GENERATION OF MULTILINE ETCH SUBSTRATES | GEMINATIO, INC. (US) | 2023-03-02 | — | — | WO | disclosed |
| WO-2023028245-A1 | SELF-ALIGNED BUILD-UP PROCESSING | GEMINATIO, INC. (US) | 2023-03-02 | — | — | WO | disclosed |
| WO-2023028249-A1 | ASSISTED FEATURE PLACEMENT IN SEMICONDUCTOR PATTERNING | GEMINATIO, INC. (US) | 2023-03-02 | — | — | WO | disclosed |
| WO-2023028259-A1 | ENHANCED FIELD STITCHING WITH CORRECTIVE CHEMISTRY | GEMINATIO, INC. (US) | 2023-03-02 | — | — | WO | disclosed |
| WO-2023028236-A1 | IN-RESIST PROCESS FOR HIGH DENSITY CONTACT FORMATION | GEMINATIO, INC. (US) | 2023-03-02 | — | — | WO | disclosed |
| WO-2023028246-A1 | ANTI-SPACER BASED SELF-ALIGNED HIGH ORDER PATTERNING | GEMINATIO, INC. (US) | 2023-03-02 | — | — | WO | disclosed |
| WO-2023028243-A1 | NARROW LINE CUT MASKING PROCESS | GEMINATIO, INC. (US) | 2023-03-02 | — | — | WO | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11505565-B2 | Zwitterion compounds and photoresists comprising same | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2022-11-22 | — | — | US | disclosed |
| CN-115373221-A | Monomers, polymers and lithographic compositions comprising the same | 罗门哈斯电子材料有限责任公司 | 2022-11-22 | — | — | CN | disclosed |
| US-11500291-B2 | Underlying coating compositions for use with photoresists | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2022-11-15 | — | — | US | disclosed |
| CN-109725493-B | Primer composition for use with photoresists | 罗门哈斯电子材料韩国有限公司 | 2022-11-08 | — | — | CN | disclosed |
| US-11480877-B2 | Resist composition, method for forming resist pattern, and polyphenol compound used therein | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-10-25 | — | — | US | disclosed |
| CN-109988259-B | Monomers, polymers and lithographic compositions comprising the same | 罗门哈斯电子材料有限责任公司 | 2022-10-14 | — | — | CN | disclosed |
| US-11453734-B2 | Treatment liquid and pattern forming method | FUJIFILM CORPORATION (JP) | 2022-09-27 | — | — | US | disclosed |
| CN-115079517-A | Salt and photoresist comprising the same | 罗门哈斯电子材料有限责任公司 | 2022-09-20 | — | — | CN | disclosed |
| US-11448964-B2 | Coating compositions for use with an overcoated photoresist | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2022-09-20 | — | — | US | disclosed |
| US-11448960-B2 | Salts and photoresists comprising same | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2022-09-20 | — | — | US | disclosed |
| CN-115058175-A | Coating compositions for use with overcoated photoresists | 罗门哈斯电子材料有限责任公司 | 2022-09-16 | — | — | CN | disclosed |
| CN-109725492-B | Underlayer coating composition for use with photoresists | 罗门哈斯电子材料韩国有限公司 | 2022-09-02 | — | — | CN | disclosed |
| CN-109791362-B | Coating compositions for use with an overcoated photoresist | 罗门哈斯电子材料韩国有限公司 | 2022-08-16 | — | — | CN | disclosed |
| CN-105739236-B | Coating compositions for use with overcoated photoresists | 罗门哈斯电子材料韩国有限公司 | 2022-07-19 | — | — | CN | disclosed |
| WO-2022145189-A1 | PHOTOSENSITIVE RESIN COMPOSITION AND ORGANIC EL ELEMENT PARTITION | 昭和電工株式会社 | 2022-07-07 | — | — | WO | disclosed |
| WO-2022145187-A1 | PHOTOSENSITIVE RESIN COMPOSITION AND ORGANIC EL ELEMENT PARTITION | 昭和電工株式会社 | 2022-07-07 | — | — | WO | disclosed |
| WO-2022145188-A1 | PHOTOSENSITIVE RESIN COMPOSITION AND ORGANIC EL ELEMENT PARTITION | 昭和電工株式会社 | 2022-07-07 | — | — | WO | disclosed |
| US-20220177641-A1 | CURABLE COMPOSITION, CURED PRODUCT, AND COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2022-06-09 | — | — | US | disclosed |
| US-20220137508-A9 | FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2022-05-05 | — | — | US | disclosed |
| CN-109143783-B | Coating compositions for use with overcoated photoresists | 罗门哈斯电子材料韩国有限公司 | 2022-04-29 | — | — | CN | disclosed |
| CN-109541886-B | Antireflective compositions, methods of use thereof, and coated substrates | 罗门哈斯电子材料韩国有限公司 | 2022-04-26 | — | — | CN | disclosed |
| CN-108983549-B | Acid generator and photoresist containing the same | 罗门哈斯电子材料有限公司 | 2022-04-26 | — | — | CN | disclosed |
| WO-2022049911-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD | JSR株式会社 | 2022-03-10 | — | — | WO | disclosed |
| US-11262656-B2 | Coating compositions for use with an overcoated photoresist | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2022-03-01 | — | — | US | disclosed |
| US-11256170-B2 | Compound, resist composition, and method for forming resist pattern using it | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-22 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| US-20220011670-A1 | RESIST UNDERLAYER SURFACE MODIFICATION | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2022-01-13 | — | — | US | disclosed |
| CN-113480439-A | Preparation method of aminophenol containing isopropylidene alkane structure | 江西同宇新材料有限公司 | 2021-10-08 | — | — | CN | disclosed |
| CN-108137478-B | Compound, composition thereof, purification method, resist pattern formation method, and amorphous film production method | 三菱瓦斯化学株式会社 | 2021-09-28 | — | — | CN | disclosed |
| US-20210278764-A1 | FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2021-09-09 | — | — | US | disclosed |
| US-11086220-B2 | Underlayer coating compositions for use with photoresists | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2021-08-10 | — | — | US | disclosed |
| CN-107924123-B | Material for lithography, method for producing same, composition for lithography, method for forming pattern, compound, resin, and method for purifying same | 学校法人关西大学 | 2021-08-06 | — | — | CN | disclosed |
| US-20210200097-A1 | TREATMENT LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2021-07-01 | — | — | US | disclosed |
| EP-2420891-B1 | Process for immersion lithography | ROHM & HAAS ELECT MAT (US) | 2021-06-23 | — | — | EP | disclosed |
| US-11042094-B2 | Treatment liquid and pattern forming method | FUJIFILM CORPORATION (JP) | 2021-06-22 | — | — | US | disclosed |
| US-11036133-B2 | Fluorine-containing polymer, purification method, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2021-06-15 | — | — | US | disclosed |
| CN-107533291-B | Compound, resist composition, and resist pattern formation method using same | 三菱瓦斯化学株式会社 | 2021-06-11 | — | — | CN | disclosed |
| EP-3279727-B1 | COMPOUND, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING IT | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-06-09 | — | — | EP | disclosed |
| EP-3062151-B1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-05-05 | — | — | EP | disclosed |
| CN-106647170-B | Coating compositions for use with overcoated photoresists | 罗门哈斯电子材料韩国有限公司 | 2021-05-04 | — | — | CN | disclosed |
| CN-107428717-B | Resist composition, resist pattern forming method, and polyphenol compound used for same | 三菱瓦斯化学株式会社 | 2021-04-23 | — | — | CN | disclosed |
| CN-107533290-B | Resist base material, resist composition, and method for forming resist pattern | 三菱瓦斯化学株式会社 | 2021-04-09 | — | — | CN | disclosed |
| CN-106187964-B | Acid generator compound and photoresist comprising the same | 罗门哈斯电子材料有限责任公司 | 2021-04-06 | — | — | CN | disclosed |
| US-10962884-B2 | Treatment liquid and pattern forming method | FUJIFILM CORPORATION (JP) | 2021-03-30 | — | — | US | disclosed |
| EP-3141957-B1 | RESIST MATERIAL, RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-03-24 | — | — | EP | disclosed |
| CN-106814543-B | Coating compositions for use with overcoated photoresists | 罗门哈斯电子材料韩国有限公司 | 2021-03-23 | — | — | CN | disclosed |
| EP-3279728-B1 | RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-03-17 | — | — | EP | disclosed |
| CN-108008600-B | Radiation-sensitive composition | 三菱瓦斯化学株式会社 | 2021-02-09 | — | — | CN | disclosed |
| EP-3229075-B1 | PHOTORESIST COMPOSITION, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING RESIST PATTERN | JSR CORP (JP) | 2021-01-06 | — | — | EP | disclosed |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-12-31 | — | — | US | disclosed |
| US-20200401043-A1 | PATTERN FORMING METHOD AND DEVELOPER | JSR CORPORATION (JP) | 2020-12-24 | — | — | US | disclosed |
| EP-2485090-B1 | Radiation-sensitive resin composition for forming resist pattern | JSR CORP (JP) | 2020-12-23 | — | — | EP | disclosed |
| US-10844037-B2 | Aryl acetate onium materials | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2020-11-24 | — | — | US | disclosed |
| US-10816898-B2 | — | — | 2020-10-27 | — | — | US | disclosed |
| US-10809616-B2 | Cholate photoacid generators and photoresists comprising same | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2020-10-20 | — | — | US | disclosed |
| CN-106154747-B | Photobase generators and photoresist compositions comprising the same | 罗门哈斯电子材料韩国有限公司 | 2020-10-16 | — | — | CN | disclosed |
| US-10788751-B2 | Coating composition for use with an overcoated photoresist | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2020-09-29 | — | — | US | disclosed |
| US-20200262787-A1 | OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-08-20 | — | — | US | disclosed |
| EP-3279190-B1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN | MITSUBISHI GAS CHEMICAL CO (JP) | 2020-08-12 | — | — | EP | disclosed |
| CN-105103051-B | Pattern forming method and method for manufacturing electronic component using the same | 富士胶片株式会社 | 2020-07-31 | — | — | CN | disclosed |
| EP-2080750-B1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL CO (JP) | 2020-07-29 | — | — | EP | disclosed |
| CN-106462059-B | Resist material, resist composition, and resist pattern forming method | 三菱瓦斯化学株式会社 | 2020-07-28 | — | — | CN | disclosed |
| CN-106957217-B | Polyhydric phenol compound for resist composition | 三菱瓦斯化学株式会社 | 2020-07-24 | — | — | CN | disclosed |
| CN-107267039-B | Coating compositions for use with an overcoated photoresist | 罗门哈斯电子材料韩国有限公司 | 2020-07-07 | — | — | CN | disclosed |
| CN-111352301-A | Radiation-sensitive resin composition and method for forming microlens | JSR株式会社 | 2020-06-30 | — | — | CN | disclosed |
| US-10670965-B2 | Polymers and photoresist compositions | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2020-06-02 | — | — | US | disclosed |
| US-20200166843-A1 | PATTERN FORMING METHOD AND PROCESSING LIQUID | JSR CORPORATION (JP) | 2020-05-28 | — | — | US | disclosed |
| US-10642156-B2 | Resist base material, resist composition and method for forming resist pattern | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-05-05 | — | — | US | disclosed |
| US-20200124961-A1 | FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2020-04-23 | — | — | US | disclosed |
| CN-111033381-A | Coating compositions for use with overcoated photoresists | 罗门哈斯电子材料韩国有限公司 | 2020-04-17 | — | — | CN | disclosed |
| US-10620534-B2 | Fluorine-containing polymer, purification method, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2020-04-14 | — | — | US | disclosed |
| EP-3143010-B1 | ENERGY EFFICIENT MANUFACTURING PROCESS FOR PREPARING N,O-TRIGLYCIDYL AMINOPHENOLS | ADITYA BIRLA CHEMICALS THAILAND LTD (TH) | 2020-04-08 | — | — | EP | disclosed |
| CN-104216224-B | Photoresists comprising urethane components | 罗门哈斯电子材料有限公司 | 2020-03-24 | — | — | CN | disclosed |
| US-10558122-B2 | Compositions comprising sulfonamide material and processes for photolithography | ROHM AND HAAS ELECTRONIC MATERIALS, LLC (US) | 2020-02-11 | — | — | US | disclosed |
| CN-104570602-B | substituted arylonium materials | 罗门哈斯电子材料有限公司 | 2019-12-10 | — | — | CN | disclosed |
| US-20190346763-A1 | COMPOSITIONS COMPRISING HETERO-SUBSTITUTED CARBOCYCLIC ARYL COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2019-11-14 | — | — | US | disclosed |
| US-10474032-B2 | Coating compositions | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2019-11-12 | — | — | US | disclosed |
| US-10466588-B2 | Sulfonyl photoacid generators and photoresists comprising same | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2019-11-05 | — | — | US | disclosed |
| CN-110333645-A | Photoresist comprising a variety of raw sour immunomodulator compounds | 罗门哈斯电子材料有限公司 | 2019-10-15 | — | — | CN | disclosed |
| US-10437148-B2 | Resist material, resist composition and method for forming resist pattern | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2019-10-08 | — | — | US | disclosed |
| US-10429737-B2 | Antireflective compositions with thermal acid generators | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2019-10-01 | — | — | US | disclosed |
| CN-105264440-B | Anti-corrosion agent composition | 三菱瓦斯化学株式会社 | 2019-09-24 | — | — | CN | disclosed |
| US-20190278175-A9 | FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2019-09-12 | — | — | US | disclosed |
| CN-106133604-B | Protectant composition and protectant pattern forming method | 三菱瓦斯化学株式会社 | 2019-09-06 | — | — | CN | disclosed |
| US-20190258168-A1 | TREATMENT LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2019-08-22 | — | — | US | disclosed |
| US-20190227433-A1 | ACID GENERATORS AND PHOTORESISTS COMPRISING SAME | ROHM & HAAS ELECT MAT (US) | 2019-07-25 | — | — | US | disclosed |
| EP-3118684-B1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL CO (JP) | 2019-07-24 | — | — | EP | disclosed |
| EP-2743249-B1 | CYCLIC COMPOUND, METHOD FOR PRODUCING SAME, COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL CO (JP) | 2019-07-24 | — | — | EP | disclosed |
| US-10359698-B2 | Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2019-07-23 | — | — | US | disclosed |
| EP-2911002-B1 | RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL CO (JP) | 2019-07-17 | — | — | EP | disclosed |
| CN-109988259-A | Monomers, polymers and lithographic compositions comprising the same | 罗门哈斯电子材料有限责任公司 | 2019-07-09 | — | — | CN | disclosed |
| US-20190202955-A1 | MONOMERS, POLYMERS AND LITHOGRAPHIC COMPOSITIONS COMPRISING SAME | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2019-07-04 | — | — | US | disclosed |
| CN-109928904-A | Zwitterionic compound and photoresist comprising same | 罗门哈斯电子材料有限责任公司 | 2019-06-25 | — | — | CN | disclosed |
| EP-1720072-B1 | Compositons and processes for immersion lithography | ROHM & HAAS ELECT MAT (US) | 2019-06-05 | — | — | EP | disclosed |
| US-20190161509-A1 | ZWITTERION COMPOUNDS AND PHOTORESISTS COMPRISING SAME | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2019-05-30 | — | — | US | disclosed |
| US-20190163055-A1 | SALTS AND PHOTORESISTS COMPRISING SAME | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2019-05-30 | — | — | US | disclosed |
| US-20190163058-A1 | SALTS AND PHOTORESISTS COMPRISING SAME | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2019-05-30 | — | — | US | disclosed |
| US-10303055-B2 | Resist composition and method for forming resist pattern | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2019-05-28 | — | — | US | disclosed |
| US-10303058-B2 | Pattern forming method, treating agent, electronic device, and method for manufacturing the same | FUJIFILM CORPORATION (JP) | 2019-05-28 | — | — | US | disclosed |
| US-20190155162-A1 | PATTERN-FORMING METHOD AND COMPOSITION FOR RESIST PATTERN-REFINEMENT | JSR CORPORATION (JP) | 2019-05-23 | — | — | US | disclosed |
| CN-109725493-A | The primer composition being used together with photoresist | 罗门哈斯电子材料韩国有限公司 | 2019-05-07 | — | — | CN | disclosed |
| US-20190129305-A1 | UNDERLYING COATING COMPOSITIONS FOR USE WITH PHOTORESISTS | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2019-05-02 | — | — | US | disclosed |
| US-20190129306-A1 | UNDERLAYER COATING COMPOSITIONS FOR USE WITH PHOTORESISTS | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2019-05-02 | — | — | US | disclosed |
| US-10274825-B2 | Acid generator compounds and photoresists comprising same | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2019-04-30 | — | — | US | disclosed |
| US-10274824-B2 | Photobase generators and photoresist compositions comprising same | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2019-04-30 | — | — | US | disclosed |
| CN-109690361-A | Optical component forms composition | 三菱瓦斯化学株式会社 | 2019-04-26 | — | — | CN | disclosed |
| EP-2505576-B1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND RESIST PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL CO (JP) | 2019-04-24 | — | — | EP | disclosed |
| EP-3007004-B1 | RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL CO (JP) | 2019-04-17 | — | — | EP | disclosed |
| US-10248020-B2 | Acid generators and photoresists comprising same | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2019-04-02 | — | — | US | disclosed |
| US-20190085173-A1 | ANTIREFLECTIVE COMPOSITIONS WITH THERMAL ACID GENERATORS | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2019-03-21 | — | — | US | disclosed |
| CN-104737073-B | Anti-corrosion agent composition | 三菱瓦斯化学株式会社 | 2019-03-08 | — | — | CN | disclosed |
| US-10222699-B2 | Compositions and processes for immersion lithography | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2019-03-05 | — | — | US | disclosed |
| US-10221131-B2 | Acid generator compounds and photoresists comprising same | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2019-03-05 | — | — | US | disclosed |
| US-20190056657-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2019-02-21 | — | — | US | disclosed |
| US-10203602-B2 | Coating compositions for use with an overcoated photoresist | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2019-02-12 | — | — | US | disclosed |
| US-20190025699-A1 | FILM-FORMING MATERIAL FOR RESIST PROCESS AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2019-01-24 | — | — | US | disclosed |
| US-20190025695-A1 | FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2019-01-24 | — | — | US | disclosed |
| CN-104281006-B | Radiation-ray sensitive composition | 三菱瓦斯化学株式会社 | 2019-01-22 | — | — | CN | disclosed |
| US-10180627-B2 | Processes for photolithography | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2019-01-15 | — | — | US | disclosed |
| US-10179778-B2 | Substituted aryl onium materials | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2019-01-15 | — | — | US | disclosed |
| EP-2927911-B1 | INSULATED WIRE AND ELECTRICAL/ELECTRONIC DEVICE | FURUKAWA ELECTRIC CO LTD (JP) | 2019-01-09 | — | — | EP | disclosed |
| CN-103913951-B | Acid agent and photoresist containing it | 罗门哈斯电子材料有限公司 | 2019-01-08 | — | — | CN | disclosed |
| CN-109143783-A | The coating composition being used together with outer painting photoresist | 罗门哈斯电子材料韩国有限公司 | 2019-01-04 | — | — | CN | disclosed |
| CN-109073782-A | Optical element forms composition and its solidfied material | 三菱瓦斯化学株式会社 | 2018-12-21 | — | — | CN | disclosed |
| US-20180364575-A1 | COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2018-12-20 | — | — | US | disclosed |
| WO-2018229554-A2 | COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2018-12-20 | — | — | WO | disclosed |
| US-20180364576-A1 | COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2018-12-20 | — | — | US | disclosed |
| CN-104391429-B | Radiation sensitive resin composition, polymer and resist pattern forming method | JSR株式会社 | 2018-12-18 | — | — | CN | disclosed |
| CN-108983549-A | Acid agent and photoresist containing it | 罗门哈斯电子材料有限公司 | 2018-12-11 | — | — | CN | disclosed |
| CN-103733135-B | Resist composition, method for forming resist pattern, polyphenol compound used for the same, and alcohol compound derived from the polyphenol compound | 三菱瓦斯化学株式会社 | 2018-11-27 | — | — | CN | disclosed |
| US-20180284607-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-10-04 | — | — | US | disclosed |
| US-10082733-B2 | Fluorine-containing polymer, purification method, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2018-09-25 | — | — | US | disclosed |
| US-20180246405-A1 | MATERIAL FOR LITHOGRAPHY, PRODUCTION METHOD THEREFOR, COMPOSITION FOR LITHOGRAPHY, PATTERN FORMATION METHOD, COMPOUND, RESIN, AND METHOD FOR PURIFYING THE COMPOUND OR THE RESIN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-08-30 | — | — | US | disclosed |
| US-20180217499-A1 | TREATMENT LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2018-08-02 | — | — | US | disclosed |
| US-20180217503-A1 | TREATMENT LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2018-08-02 | — | — | US | disclosed |
| CN-103852973-B | Ionic hot acid generating agent for cryogenic applications | 罗门哈斯电子材料有限公司 | 2018-07-31 | — | — | CN | disclosed |
| CN-104725558-B | The method that photic acid generates copolymer and relevant photoetching compositions, the base material of coating and formation electronic device | 罗门哈斯电子材料有限公司 | 2018-07-27 | — | — | CN | disclosed |
| CN-104076601-B | Acid generator and photoresist containing the same | 罗门哈斯电子材料有限公司 | 2018-07-24 | — | — | CN | disclosed |
| EP-3348542-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR PRODUCING AMORPHOUS FILM, MATERIAL FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, COMPOSTION FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | Mitsubishi Gas Chemical Company, Inc. (JP) | 2018-07-18 | — | — | EP | disclosed |
| US-10025188-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-17 | — | — | US | disclosed |
| US-10023548-B2 | Energy efficient manufacturing process for preparing N,O-triglycidyl aminophenols | ADITYA BIRLA CHEMICALS (THAILAND) LTD. (TH) | 2018-07-17 | — | — | US | disclosed |
| EP-3343290-A1 | LITHOGRAPHY MATERIAL AND MANUFACTURING METHOD THEREFOR, LITHOGRAPHY COMPOSITION, PATTERN FORMING METHOD, COMPOUND, RESIN, AND REFINING METHOD FOR COMPOUND AND RESIN | A School Corporation Kansai University (JP) | 2018-07-04 | — | — | EP | disclosed |
| CN-108137478-A | Compound, resin, resist composition or radiation-sensitive composition, method for forming resist pattern, method for producing amorphous film, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, method for forming circuit pattern, and purification method | 三菱瓦斯化学株式会社 | 2018-06-08 | — | — | CN | disclosed |
| CN-108139691-A | Processing liquid and pattern forming method | 富士胶片株式会社 | 2018-06-08 | — | — | CN | disclosed |
| EP-2476662-B1 | CYCLIC COMPOUND, PROCESS FOR PREPARATION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | MITSUBISHI GAS CHEMICAL CO (JP) | 2018-05-30 | — | — | EP | disclosed |
| EP-1566693-B1 | Use of a Resist Composition for Immersion Exposure and Pattern Formation Method Using the Composition | FUJIFILM CORP (JP) | 2018-05-23 | — | — | EP | disclosed |
| CN-108008600-A | Radiation-ray sensitive composition | 三菱瓦斯化学株式会社 | 2018-05-08 | — | — | CN | disclosed |
| US-9958780-B2 | Coating compositions for photoresists | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2018-05-01 | — | — | US | disclosed |
| US-20180107113-A1 | RESIST BASE MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-04-19 | — | — | US | disclosed |
| CN-107924123-A | Photoetching material and its manufacture method, photoetching composition, pattern formation method and, compound, resin and their purification process | 学校法人关西大学 | 2018-04-17 | — | — | CN | disclosed |
| US-20180101100-A1 | TREATMENT LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2018-04-12 | — | — | US | disclosed |
| WO-2018060770-A1 | COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2018-04-05 | — | — | WO | disclosed |
| US-20180095367-A1 | COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST | ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) | 2018-04-05 | — | — | US | disclosed |
| US-20180081270-A1 | RADIATION-SENSITIVE COMPOSITION, AMORPHOUS FILM, AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-03-22 | — | — | US | disclosed |
| US-9921474-B2 | Pattern-forming method and composition | JSR CORPORATION (JP) | 2018-03-20 | — | — | US | disclosed |
| US-20180074402-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-03-15 | — | — | US | disclosed |
| US-20180074406-A1 | COMPOUND, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING IT | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-03-15 | — | — | US | disclosed |
| US-20180074404-A1 | RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-03-15 | — | — | US | disclosed |
| US-9908831-B2 | Resist composition, method for forming resist pattern, polyphenolic compound for use in the composition, and alcoholic compound that can be derived therefrom | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-03-06 | — | — | US | disclosed |
| US-20180052390-A1 | ONIUM COMPOUNDS AND METHODS OF SYNTHESIS THEREOF | ROHM AND HAAS ELECTRONIC MATERIALS LLC | 2018-02-22 | — | — | US | disclosed |
| EP-3285119-A1 | RADIATION-SENSITIVE COMPOSITION | Mitsubishi Gas Chemical Company, Inc. (JP) | 2018-02-21 | — | — | EP | disclosed |
| US-9897913-B2 | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-02-20 | — | — | US | disclosed |
| EP-2599814-B1 | COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL CO (JP) | 2018-02-14 | — | — | EP | disclosed |
| EP-3279727-A1 | COMPOUND, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN IN WHICH SAME IS USED | Mitsubishi Gas Chemical Company, Inc. (JP) | 2018-02-07 | — | — | EP | disclosed |
| EP-3279730-A1 | RADIATION-SENSITIVE COMPOSITION, AMORPHOUS FILM, AND RESIST PATTERN-FORMATION METHOD | Mitsubishi Gas Chemical Company, Inc. (JP) | 2018-02-07 | — | — | EP | disclosed |
| EP-3279728-A1 | RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2018-02-07 | — | — | EP | disclosed |
| EP-3279731-A1 | RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD | Mitsubishi Gas Chemical Company, Inc. (JP) | 2018-02-07 | — | — | EP | disclosed |
| EP-3279190-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2018-02-07 | — | — | EP | disclosed |
| CN-107533290-A | RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | 三菱瓦斯化学株式会社 | 2018-01-02 | — | — | CN | disclosed |
| CN-107533291-A | Compound, resist composition, and resist pattern formation method using same | 三菱瓦斯化学株式会社 | 2018-01-02 | — | — | CN | disclosed |
| CN-107422607-A | With the coating composition that outer painting photoresist is used together | 罗门哈斯电子材料韩国有限公司 | 2017-12-01 | — | — | CN | disclosed |
| CN-107430337-A | RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD | 三菱瓦斯化学株式会社 | 2017-12-01 | — | — | CN | disclosed |
| CN-107428717-A | Resist composition, resist pattern forming method, and polyphenol compound used for same | 三菱瓦斯化学株式会社 | 2017-12-01 | — | — | CN | disclosed |
| CN-107430338-A | RADIATION-SENSITIVE COMPOSITION | 三菱瓦斯化学株式会社 | 2017-12-01 | — | — | CN | disclosed |
| CN-107407874-A | Radiation-sensitive composition, amorphous film and corrosion-resisting pattern forming method | 三菱瓦斯化学株式会社 | 2017-11-28 | — | — | CN | disclosed |
| US-20170336709-A1 | COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2017-11-23 | — | — | US | disclosed |
| US-9817311-B2 | Resist pattern-forming method, substrate-processing method, and photoresist composition | JSR CORPORATION (JP) | 2017-11-14 | — | — | US | disclosed |
| US-20170322492-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-11-09 | — | — | US | disclosed |
| CN-107267039-A | The coating composition being used together with outer applying photoresist | 罗门哈斯电子材料韩国有限公司 | 2017-10-20 | — | — | CN | disclosed |
| EP-3229075-A1 | PHOTORESIST COMPOSITION, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING RESIST PATTERN | JSR Corporation (JP) | 2017-10-11 | — | — | EP | disclosed |
| US-9785048-B2 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2017-10-10 | — | — | US | disclosed |
| US-20170285470-A1 | CHOLATE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2017-10-05 | — | — | US | disclosed |
| US-20170285482-A1 | ORGANIC PROCESSING LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2017-10-05 | — | — | US | disclosed |
| US-20170283651-A1 | COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2017-10-05 | — | — | US | disclosed |
| US-20170269476-A1 | PHOTORESIST COMPOSITION, PRODUCTION METHOD OF PHOTORESIST COMPOSITION, AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-09-21 | — | — | US | disclosed |
| US-9766547-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-09-19 | — | — | US | disclosed |
| US-9746769-B2 | — | — | 2017-08-29 | — | — | US | disclosed |
| CN-107111253-A | Organic processing liquid and pattern forming method | 富士胶片株式会社 | 2017-08-29 | — | — | CN | disclosed |
| WO-2017137951-A1 | INHERENTLY HEALING POLYCARBONATE RESINS | SABIC GLOBAL TECHNOLOGIES B.V. (NL) | 2017-08-17 | — | — | WO | disclosed |
| EP-2189845-B1 | Compositions and processes for photolithography | ROHM & HAAS ELECT MAT (US) | 2017-08-02 | — | — | EP | disclosed |
| US-9720321-B2 | Lactone photoacid generators and resins and photoresists comprising same | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2017-08-01 | — | — | US | disclosed |
| US-9720322-B2 | Photoresist composition, compound, and production method thereof | JSR CORPORATION (JP) | 2017-08-01 | — | — | US | disclosed |
| EP-2003148-B1 | RADIATION-SENSITIVE RESIN COMPOSITION COMPRISING A FLUORINE-CONTAINING POLYMER | JSR CORP (JP) | 2017-07-19 | — | — | EP | disclosed |
| CN-106957217-A | Polyphenol compound for anti-corrosion agent composition | 三菱瓦斯化学株式会社 | 2017-07-18 | — | — | CN | disclosed |
| US-20170199453-A1 | FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2017-07-13 | — | — | US | disclosed |
| US-9703192-B2 | Onium compounds and methods of synthesis thereof | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2017-07-11 | — | — | US | disclosed |
| US-9696627-B2 | Compositions comprising base-reactive component and processes for photolithography | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2017-07-04 | — | — | US | disclosed |
| US-9696622-B2 | Compositions and processes for immersion lithography | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2017-07-04 | — | — | US | disclosed |
| US-20170183279-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM | MITSUBISHI GAS CHEMICAL CO (JP) | 2017-06-29 | — | — | US | disclosed |
| CN-106814543-A | The coating composition being used together with outer painting photoresist | 罗门哈斯电子材料韩国有限公司 | 2017-06-09 | — | — | CN | disclosed |
| US-9671689-B2 | Cholate photoacid generators and photoresists comprising same | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2017-06-06 | — | — | US | disclosed |
| US-20170153547-A1 | COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2017-06-01 | — | — | US | disclosed |
| US-20170152236-A1 | ENERGY EFFICIENT MANUFACTURING PROCESS FOR PREPARING N,O-TRIGLYCIDYL AMINOPHENOLS | ADITYA BIRLA CHEMICALS (THAILAND) LTD. (TH) | 2017-06-01 | — | — | US | disclosed |
| US-20170153542-A1 | SULFONYL PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2017-06-01 | — | — | US | disclosed |
| US-20170145142-A1 | RESIST MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2017-05-25 | — | — | US | disclosed |
| US-9651863-B2 | Pattern forming method, active light sensitive or radiation sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-05-16 | — | — | US | disclosed |
| US-9651864-B2 | Negative resist composition, method for producing relief pattern using the same, and electronic component using the same | DAI NIPPON PRINTING CO., LTD. (JP) | 2017-05-16 | — | — | US | disclosed |
| CN-106647170-A | Coating compositions for use with an overcoated photoresist | 罗门哈斯电子材料韩国有限公司 | 2017-05-10 | — | — | CN | disclosed |
| US-20170123319-A1 | COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2017-05-04 | — | — | US | disclosed |
| CN-104725557-B | Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device | 罗门哈斯电子材料有限公司 | 2017-04-26 | — | — | CN | disclosed |
| CN-102681336-B | Compositions comprising base-reactive component and processes for photolithography | 罗门哈斯电子材料有限公司 | 2017-04-12 | — | — | CN | disclosed |
| EP-2743769-B1 | RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYPHENOL COMPOUND USED THEREIN, AND ALCOHOL COMPOUND CAPABLE OF BEING DERIVED THEREFROM | MITSUBISHI GAS CHEMICAL CO (JP) | 2017-03-22 | — | — | EP | disclosed |
| EP-3143010-A1 | [0001]ENERGY EFFICIENT MANUFACTURING PROCESS FOR PREPARING N,0- TRIGLYCIDYL AMINOPHENOLS | Aditya Birla Chemicals (Thailand) Ltd. (TH) | 2017-03-22 | — | — | EP | disclosed |
| US-9598392-B2 | Resist composition, method for forming resist pattern, polyphenolic compound for use in the composition, and alcoholic compound that can be derived therefrom | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2017-03-21 | — | — | US | disclosed |
| US-9598520-B2 | Radiation-sensitive resin composition, polymer and method for forming a resist pattern | JSR CORPORATION (JP) | 2017-03-21 | — | — | US | disclosed |
| US-20170075220-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2017-03-16 | — | — | US | disclosed |
| EP-3141957-A1 | RESIST MATERIAL, RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD | Mitsubishi Gas Chemical Company, Inc. (JP) | 2017-03-15 | — | — | EP | disclosed |
| CN-106479329-A | Coating compositions for use with overcoated photoresists | 罗门哈斯电子材料有限责任公司 | 2017-03-08 | — | — | CN | disclosed |
| US-20170059989-A1 | POLYMER COMPOUND, RADIATION SENSITIVE COMPOSITION AND PATTERN FORMING METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2017-03-02 | — | — | US | disclosed |
| US-20170059991-A1 | COATING COMPOSITION FOR USE WITH AN OVERCOATED PHOTORESIST | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2017-03-02 | — | — | US | disclosed |
| US-20170058079-A1 | POLYMER COMPOUND, RADIATION SENSITIVE COMPOSITION AND PATTERN FORMING METHOD | A SCHOOL CORPORATION KANSAI UNIVERSITY (JP) | 2017-03-02 | — | — | US | disclosed |
| US-9581901-B2 | Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2017-02-28 | — | — | US | disclosed |
| CN-106462059-A | Resist material, resist composition, and resist pattern formation method | 三菱瓦斯化学株式会社 | 2017-02-22 | — | — | CN | disclosed |
| US-9563128-B2 | Compositions and processes for immersion lithography | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2017-02-07 | — | — | US | disclosed |
| EP-2474538-B1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | MITSUBISHI GAS CHEMICAL CO (JP) | 2017-01-25 | — | — | EP | disclosed |
| EP-3118684-A1 | RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2017-01-18 | — | — | EP | disclosed |
| US-9540339-B2 | Resist composition, method for forming resist pattern, polyphenolic compound for use in the composition, and alcoholic compound that can be derived therefrom | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2017-01-10 | — | — | US | disclosed |
| US-9541834-B2 | Ionic thermal acid generators for low temperature applications | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2017-01-10 | — | — | US | disclosed |
| EP-2781504-B1 | CYCLIC COMPOUND, METHOD FOR PRODUCING SAME, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL CO (JP) | 2017-01-04 | — | — | EP | disclosed |
| US-9529259-B2 | Radiation-sensitive resin composition, resist pattern-forming method, acid diffusion control agent, compound, and method for producing compound | JSR CORPORATION (JP) | 2016-12-27 | — | — | US | disclosed |
| US-20160370700-A1 | PHOTORESIST COMPOSITION, COMPOUND, AND PRODUCTION METHOD THEREOF | JSR CORPORATION (JP) | 2016-12-22 | — | — | US | disclosed |
| US-20160347709-A1 | ACID GENERATOR COMPOUNDS AND PHOTORESISTS COMPRISING SAME | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2016-12-01 | — | — | US | disclosed |
| US-9507260-B2 | Compositions and processes for photolithography | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2016-11-29 | — | — | US | disclosed |
| CN-106154747-A | Light alkali producing agent and comprise its photo-corrosion-resisting agent composition | 罗门哈斯电子材料韩国有限公司 | 2016-11-23 | — | — | CN | disclosed |
| US-9500947-B2 | Acid generator compounds and photoresists comprising same | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2016-11-22 | — | — | US | disclosed |
| US-9500950-B2 | Fluorine-containing polymer, purification method, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2016-11-22 | — | — | US | disclosed |
| US-9499513-B2 | Acid generators and photoresists comprising same | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2016-11-22 | — | — | US | disclosed |
| US-20160334703-A1 | PHOTOBASE GENERATORS AND PHOTORESIST COMPOSITIONS COMPRISING SAME | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2016-11-17 | — | — | US | disclosed |
| CN-106133604-A | Protectant composition and protectant pattern forming method | 三菱瓦斯化学株式会社 | 2016-11-16 | — | — | CN | disclosed |
| CN-106125506-A | Novel polymer and photo-corrosion-resisting agent composition | 罗门哈斯电子材料有限公司 | 2016-11-16 | — | — | CN | disclosed |
| US-20160327866-A1 | PATTERN FORMING METHOD, TREATING AGENT, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING THE SAME | FUJIFILM CORPORATION (JP) | 2016-11-10 | — | — | US | disclosed |
| US-9488910-B2 | Sulfonyl photoacid generators and photoresists comprising same | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2016-11-08 | — | — | US | disclosed |
| US-20160320705-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-11-03 | — | — | US | disclosed |
| US-9482948-B2 | Photoresist compositions and methods of forming photolithographic patterns | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2016-11-01 | — | — | US | disclosed |
| US-9477149-B2 | Photoresist composition, compound, and production method thereof | JSR CORPORATION (JP) | 2016-10-25 | — | — | US | disclosed |
| EP-1580598-B1 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM CORP (JP) | 2016-10-12 | — | — | EP | disclosed |
| US-20160291462-A1 | PATTERN-FORMING METHOD AND COMPOSITION FOR RESIST PATTERN-REFINEMENT | JSR CORPORATION (JP) | 2016-10-06 | — | — | US | disclosed |
| US-20160266489-A1 | RESIST PATTERN-FORMING METHOD, SUBSTRATE-PROCESSING METHOD, AND PHOTORESIST COMPOSITION | JSR CORPORATION (JP) | 2016-09-15 | — | — | US | disclosed |
| US-9436082-B2 | Compositions comprising base-reactive component and processes for photolithography | ROHM AND HAAS ELECTRONICS MATERIALS LLC (US) | 2016-09-06 | — | — | US | disclosed |
| US-9434609-B2 | Method for forming pattern, and polysiloxane composition | JSR CORPORATION (JP) | 2016-09-06 | — | — | US | disclosed |
| US-20160252818-A9 | PRODUCTION METHOD OF SEMICONDUCTOR ELEMENT, AND ION IMPLANTATION METHOD | JSR CORPORATION (JP) | 2016-09-01 | — | — | US | disclosed |
| EP-3062151-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2016-08-31 | — | — | EP | disclosed |
| EP-1739485-B1 | RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL CO (JP) | 2016-08-31 | — | — | EP | disclosed |
| CN-103946204-B | Cyclic compound, its manufacture method, radiation-sensitive composition and corrosion-resisting pattern forming method | 三菱瓦斯化学株式会社 | 2016-08-24 | — | — | CN | disclosed |
| CN-103717562-B | Cyclic compound, its manufacture method, compositions and corrosion-resisting pattern forming method | 三菱瓦斯化学株式会社 | 2016-08-24 | — | — | CN | disclosed |
| US-9417527-B2 | Resist pattern-forming method, substrate-processing method, and photoresist composition | JSR CORPORATION (JP) | 2016-08-16 | — | — | US | disclosed |
| EP-2332960-B1 | Cholate photoacid generators and photoresists comprising same | ROHM & HAAS ELECT MAT (US) | 2016-08-10 | — | — | EP | disclosed |
| EP-1918778-B1 | Compositions and processes for immersion lithography | ROHM & HAAS ELECT MAT (US) | 2016-08-03 | — | — | EP | disclosed |
| EP-3051348-A1 | COMPOSITIONS COMPRISING HETERO-SUBSTITUTED CARBOCYCLIC ARYL COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY | Rohm and Haas Electronic Materials LLC (US) | 2016-08-03 | — | — | EP | disclosed |
| EP-3051350-A2 | ALCOHOLIC COMPOUND AND METHOD FOR PRODUCING ALCOHOLIC COMPOUND | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2016-08-03 | — | — | EP | disclosed |
| US-20160187778-A1 | COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST | DUPONT SPECIALTY MATERIALS KOREA LTD (KR) | 2016-06-30 | — | — | US | disclosed |
| CN-103353707-B | Coating composition for photoresist | 罗门哈斯电子材料有限公司 | 2016-06-29 | — | — | CN | disclosed |
| US-20160176840-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2016-06-23 | — | — | US | disclosed |
| US-20160168117-A1 | ARYL ACETATE ONIUM MATERIALS | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2016-06-16 | — | — | US | disclosed |
| US-9354516-B2 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2016-05-31 | — | — | US | disclosed |
| US-20160145231-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2016-05-26 | — | — | US | disclosed |
| CN-102617790-B | Polymer, the method for photo-corrosion-resisting agent composition and formation photoengraving pattern | ROHM AND HAAS ELECTRONIC MATERIALS CO., LTD. (US) | 2016-05-25 | — | — | CN | disclosed |
| US-9348220-B2 | Photoacid generators and photoresists comprising same | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2016-05-24 | — | — | US | disclosed |
| US-9348226-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2016-05-24 | — | — | US | disclosed |
| CN-104130172-B | Sulphonyl light acid producing agent and the photoresist that comprises this sulphonyl light acid producing agent | ROHM AND HAAS ELECTRONIC MATERIALS CO., LTD. (US) | 2016-05-18 | — | — | CN | disclosed |
| US-9335630-B2 | Pattern-forming method, and radiation-sensitive composition | JSR CORPORATION (JP) | 2016-05-10 | — | — | US | disclosed |
| US-20160124304-A1 | PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | ROHM AND HAAS ELECTRONIC MATERIALS LLC | 2016-05-05 | — | — | US | disclosed |
| US-20160124303-A1 | RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2016-05-05 | — | — | US | disclosed |
| EP-2056162-B1 | Process for immersion lithography | ROHM & HAAS ELECT MAT (US) | 2016-05-04 | — | — | EP | disclosed |
| US-9323146-B2 | Photoresist composition, resist pattern-forming method, compound, acid generating agent, and photodegradable base | JSR CORPORATION (JP) | 2016-04-26 | — | — | US | disclosed |
| US-20160109800-A1 | PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2016-04-21 | — | — | US | disclosed |
| EP-3007004-A1 | RESIST COMPOSITION | Mitsubishi Gas Chemical Company, Inc. (JP) | 2016-04-13 | — | — | EP | disclosed |
| US-20160097978-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-04-07 | — | — | US | disclosed |
| US-9304394-B2 | Aryl acetate onium materials | ROHM AND HAAS ELECTRONIC MATERIALS, LLC (US) | 2016-04-05 | — | — | US | disclosed |
| US-9298090-B2 | — | — | 2016-03-29 | — | — | US | disclosed |
| US-20160070172-A1 | COMPOSITIONS COMPRISING SULFONAMIDE MATERIAL AND PROCESSES FOR PHOTOLITHOGRAPHY | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2016-03-10 | — | — | US | disclosed |
| US-20160062237-A1 | FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2016-03-03 | — | — | US | disclosed |
| EP-1720075-B1 | Coating compositions | ROHM & HAAS ELECT MAT (US) | 2016-03-02 | — | — | EP | disclosed |
| CN-103052670-B | Compound, radiation-sensitive composition, and resist pattern formation method | MITSUBISHI GAS CHEMICAL CO.,INC. (JP) | 2016-03-02 | — | — | CN | disclosed |
| US-9268229-B2 | Composition for forming resist underlayer film, and pattern-forming method | JSR CORPORATION (JP) | 2016-02-23 | — | — | US | disclosed |
| US-9268219-B2 | Photoresist composition and resist pattern-forming method | JSR CORPORATION (JP) | 2016-02-23 | — | — | US | disclosed |
| US-20160041465-A1 | PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-02-11 | — | — | US | disclosed |
| EP-2390722-B1 | Methods of forming photolithographic patterns | ROHM & HAAS ELECT MAT (US) | 2016-02-10 | — | — | EP | disclosed |
| CN-102844707-B | Comprise alkali reaction active component composition and for photolithographic method | ROHM AND HAAS ELECTRONIC MATERIALS, LLC (US) | 2016-02-10 | — | — | CN | disclosed |
| US-9256125-B2 | Acid generators and photoresists comprising same | ROHM AND HAAS ELECTRONIC MATERIALS, LLC (US) | 2016-02-09 | — | — | US | disclosed |
| US-9255079-B2 | Photoacid generators and photoresists comprising same | ROHM AND HAAS ELECTRONIC MATERIALS, LLC (US) | 2016-02-09 | — | — | US | disclosed |
| US-9250526-B2 | Composition for forming resist underlayer film, and pattern-forming method | JSR CORPORATION (JP) | 2016-02-02 | — | — | US | disclosed |
| US-9244355-B2 | Compositions and processes for immersion lithography | ROHM AND HAAS ELECTRONIC MATERIALS, LLC (US) | 2016-01-26 | — | — | US | disclosed |
| CN-103102251-B | Radiation-ray sensitive composition | MITSUBISHI GAS CHEMICAL INC. (JP) | 2016-01-20 | — | — | CN | disclosed |
| CN-105264440-A | Resist composition | MITSUBISHI GAS CHEMICAL CO | 2016-01-20 | — | — | CN | disclosed |
| US-9239517-B2 | Compound, radiation-sensitive composition and resist pattern formation method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2016-01-19 | — | — | US | disclosed |
| US-20160011517-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD OF MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-01-14 | — | — | US | disclosed |
| US-20160002199-A1 | ACID GENERATORS AND PHOTORESISTS COMPRISING SAME | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2016-01-07 | — | — | US | disclosed |
| US-9229319-B2 | Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2016-01-05 | — | — | US | disclosed |
| US-20150378255-A1 | COMPOSITIONS COMPRISING CARBOXY COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY | ROHM AND HAAS ELECTRONIC MATERIALS LLC | 2015-12-31 | — | — | US | disclosed |
| US-9223207-B2 | Resist pattern-forming method, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2015-12-29 | — | — | US | disclosed |
| EP-1698937-B1 | Positive resist composition and pattern-forming method using the same | FUJIFILM CORP (JP) | 2015-12-23 | — | — | EP | disclosed |
| US-9213236-B2 | Fluorine-containing polymer, purification method, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2015-12-15 | — | — | US | disclosed |
| US-20150355539-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID DIFFUSION CONTROL AGENT, COMPOUND, AND METHOD FOR PRODUCING COMPOUND | JSR CORPORATION (JP) | 2015-12-10 | — | — | US | disclosed |
| US-20150355550-A1 | PRODUCTION METHOD OF SEMICONDUCTOR ELEMENT, AND ION IMPLANTATION METHOD | JSR CORPORATION (JP) | 2015-12-10 | — | — | US | disclosed |
| US-20150355546-A1 | COMPOSITION FOR SILICON-CONTAINING FILM FORMATION, PATTERN-FORMING METHOD, AND POLYSILOXANE COMPOUND | JSR CORPORATION (JP) | 2015-12-10 | — | — | US | disclosed |
| CN-105122138-A | Pattern forming method, active light sensitive or radiation sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device | FUJIFILM CORP | 2015-12-02 | — | — | CN | disclosed |
| US-9200098-B2 | Radiation-sensitive composition and compound | JSR CORPORATION (JP) | 2015-12-01 | — | — | US | disclosed |
| CN-105103051-A | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film, and method for producing electronic device and electronic device using same | FUJIFILM CORP | 2015-11-25 | — | — | CN | disclosed |
| WO-2015174936-A1 | [0001] ENERGY EFFICIENT MANUFACTURING PROCESS FOR PREPARING N,0- TRIGLYCIDYL AMINOPHENOLS | ADITYA BIRLA CHEMICALS (THAILAND) LTD. (TH) | 2015-11-19 | — | — | WO | disclosed |
| US-9188864-B2 | Photoresist compositions and methods of forming photolithographic patterns | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2015-11-17 | — | — | US | disclosed |
| US-9188862-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the same | FUJIFILM CORPORATION (JP) | 2015-11-17 | — | — | US | disclosed |
| US-9182666-B2 | Cyclic compound, method for producing the same, radiation-sensitive composition, and resist pattern formation method | MITSUBISHI GAS CHEMICAL CO., INC. (JP) | 2015-11-10 | — | — | US | disclosed |
| US-9170488-B2 | Resist pattern-forming method, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2015-10-27 | — | — | US | disclosed |
| CN-102653576-B | Polymkeric substance, the formation method of photo-corrosion-resisting agent composition and photoengraving pattern | ROHM AND HAAS ELECTRONIC MATERIALS CO., LTD. (US) | 2015-10-21 | — | — | CN | disclosed |
| US-9164387-B2 | Pattern-forming method, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2015-10-20 | — | — | US | disclosed |
| US-9156785-B2 | Base reactive photoacid generators and photoresists comprising same | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2015-10-13 | — | — | US | disclosed |
| US-9158196-B2 | Radiation-sensitive resin composition and pattern-forming method | JSR CORPORATION (JP) | 2015-10-13 | — | — | US | disclosed |
| US-20150286136-A1 | RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2015-10-08 | — | — | US | disclosed |
| EP-2927911-A1 | INSULATED WIRE AND ELECTRICAL/ELECTRONIC DEVICE | Furukawa Electric Co., Ltd. (JP) | 2015-10-07 | — | — | EP | disclosed |
| CN-102666461-B | Ring compound, its production method, radiation-ray sensitive composition and corrosion-resisting pattern formation method | MITSUBISHI GAS CHEMICAL CO.,INC. (JP) | 2015-09-30 | — | — | CN | disclosed |
| US-20150253670-A1 | PATTERN-FORMING METHOD AND COMPOSITION | JSR CORPORATION (JP) | 2015-09-10 | — | — | US | disclosed |
| CN-102597878-B | Radiation-sensitive resin composition, polymer, and method for forming resist pattern | JSR CORP. (JP) | 2015-09-02 | — | — | CN | disclosed |
| US-9122163-B2 | — | — | 2015-09-01 | — | — | US | disclosed |
| US-9122154-B2 | Radiation-sensitive resin composition, and radiation-sensitive acid generating agent | JSR CORPORATION (JP) | 2015-09-01 | — | — | US | disclosed |
| US-9122153-B2 | Cyclic compound, method for producing same, composition, and method for forming resist pattern | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2015-09-01 | — | — | US | disclosed |
| EP-2911002-A1 | RESIST COMPOSITION | Mitsubishi Gas Chemical Company, Inc. (JP) | 2015-08-26 | — | — | EP | disclosed |
| US-9116427-B2 | Composition for forming resist underlayer film and pattern-forming method | JSR CORPORATION (JP) | 2015-08-25 | — | — | US | disclosed |
| EP-2267532-B1 | Photoacid generators and photoresists comprising same | ROHM & HAAS ELECT MAT (US) | 2015-08-19 | — | — | EP | disclosed |
| US-9104102-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2015-08-11 | — | — | US | disclosed |
| CN-102445848-B | The method of photoetching compositions and formation photoengraving pattern | ROHM AND HAAS ELECTRONIC MATERIALS CO., LTD. (US) | 2015-08-05 | — | — | CN | disclosed |
| US-20150212414-A1 | IONIC THERMAL ACID GENERATORS FOR LOW TEMPERATURE APPLICATIONS | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2015-07-30 | — | — | US | disclosed |
| CN-104761608-A | Cholate photoacid generators and photoresists comprising the same | ROHM & HAAS ELECT MAT | 2015-07-08 | — | — | CN | disclosed |
| US-20150177615-A1 | PHOTOACID-GENERATING COPOLYMER AND ASSOCIATED PHOTORESIST COMPOSITION, COATED SUBSTRATE, AND METHOD OF FORMING AN ELECTRONIC DEVICE | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2015-06-25 | — | — | US | disclosed |
| US-20150177613-A1 | PHOTOACID-GENERATING COPOLYMER AND ASSOCIATED PHOTORESIST COMPOSITION, COATED SUBSTRATE, AND METHOD OF FORMING AN ELECTRONIC DEVICE | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2015-06-25 | — | — | US | disclosed |
| US-20150177616-A1 | PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE COMPOSITION | JSR CORPORATION (JP) | 2015-06-25 | — | — | US | disclosed |
| CN-104725557-A | Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device | ROHM & HAAS ELECT MAT | 2015-06-24 | — | — | CN | disclosed |
| CN-104725558-A | Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device | ROHM & HAAS ELECT MAT | 2015-06-24 | — | — | CN | disclosed |
| CN-104737073-A | Resist composition | MITSUBISHI GAS CHEMICAL CO | 2015-06-24 | — | — | CN | disclosed |
| US-20150160556-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2015-06-11 | — | — | US | disclosed |
| US-9052600-B2 | Method for forming resist pattern and composition for forming protective film | JSR CORPORATION (JP) | 2015-06-09 | — | — | US | disclosed |
| US-9034559-B2 | Pattern-forming method, and radiation-sensitive composition | JSR CORPORATION (JP) | 2015-05-19 | — | — | US | disclosed |
| CN-104614938-A | ARYL ACETATE ONIUM MATERIALS | ROHM & HAAS ELECT MAT | 2015-05-13 | — | — | CN | disclosed |
| US-9023584-B2 | Radiation-sensitive composition, and compound | JSR CORPORATION (JP) | 2015-05-05 | — | — | US | disclosed |
| US-9023576-B2 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2015-05-05 | — | — | US | disclosed |
| CN-104570602-A | Substituted aryl onium materials | LABEAUME PAUL J | 2015-04-29 | — | — | CN | disclosed |
| CN-102566323-B | Compositions and processes for immersion lithography | ROHM & HAAS ELECT MAT | 2015-04-29 | — | — | CN | disclosed |
| EP-2189846-B1 | Process for photolithography applying a photoresist composition comprising a block copolymer | ROHM & HAAS ELECT MAT (US) | 2015-04-22 | — | — | EP | disclosed |
| EP-2503392-B1 | RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND RESIST PATTERN FORMATION METHOD | JSR CORP (JP) | 2015-04-15 | — | — | EP | disclosed |
| CN-102109760-B | Resist pattern forming method | JSR CORP | 2015-04-15 | — | — | CN | disclosed |
| US-9005880-B2 | Compositions comprising sulfonamide material and processes for photolithography | ROHM AND HAAS ELECTRONIC MATERIALS, LLC (US) | 2015-04-14 | — | — | US | disclosed |
| EP-2360153-B1 | Photoacid generators and photoresists comprising same | ROHM & HAAS ELECT MAT (US) | 2015-04-08 | — | — | EP | disclosed |
| US-20150093708-A1 | SUBSTITUTED ARYL ONIUM MATERIALS | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2015-04-02 | — | — | US | disclosed |
| US-20150093709-A1 | ARYL ACETATE ONIUM MATERIALS | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2015-04-02 | — | — | US | disclosed |
| CN-102225924-B | Photoacid generators and photoresists comprising same | ROHM & HAAS ELECT MAT | 2015-04-01 | — | — | CN | disclosed |
| US-8993223-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2015-03-31 | — | — | US | disclosed |
| CN-101900953-B | Compositions comprising block polymer and processes for photolithography | ROHM & HAAS ELECT MAT | 2015-03-25 | — | — | CN | disclosed |
| US-8980539-B2 | Developer | JSR CORPORATION (JP) | 2015-03-17 | — | — | US | disclosed |
| US-20150072290-A1 | COATING COMPOSITIONS | ROHM AND HAAS ELECTRONIC MATERIALS LLC | 2015-03-12 | — | — | US | disclosed |
| CN-102617789-B | Polymers, photoresist compositions and methods of forming photolithographic patterns | ROHM & HAAS ELECT MAT | 2015-03-11 | — | — | CN | disclosed |
| US-8975001-B2 | Photoresist compositions and methods of forming photolithographic patterns | ROHM AND HAAS ELECTRONICS MATERIALS LLC (US) | 2015-03-10 | — | — | US | disclosed |
| US-8975006-B2 | Compositions comprising carboxy component and processes for photolithography | WANG DEYAN (US) | 2015-03-10 | — | — | US | disclosed |
| CN-104391429-A | RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND METHOD FOR FORMING A RESIST PATTERN | JSR CORP | 2015-03-04 | — | — | CN | disclosed |
| US-8969629-B2 | Cyclic compound, production process thereof, radiation-sensitive composition and resist pattern formation method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2015-03-03 | — | — | US | disclosed |
| US-20150048051-A1 | RESIST PATTERN-FORMING METHOD, SUBSTRATE-PROCESSING METHOD, AND PHOTORESIST COMPOSITION | JSR CORPORATION (JP) | 2015-02-19 | — | — | US | disclosed |
| US-20150050600-A9 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2015-02-19 | — | — | US | disclosed |
| US-20150048046-A1 | METHOD FOR FORMING PATTERN, AND POLYSILOXANE COMPOSITION | JSR CORPORATION (JP) | 2015-02-19 | — | — | US | disclosed |
| US-8956807-B2 | Method for forming resist pattern, and composition for forming resist underlayer film | JSR CORPORATION (JP) | 2015-02-17 | — | — | US | disclosed |
| US-20150044609-A1 | COMPOSITIONS AND PROCESSES FOR IMMERSION LITHOGRAPHY | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2015-02-12 | — | — | US | disclosed |
| US-8945814-B2 | Acid generators and photoresists comprising same | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2015-02-03 | — | — | US | disclosed |
| US-20150030980-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL CO (JP) | 2015-01-29 | — | — | US | disclosed |
| CN-103091978-B | Methods of forming photolithographic patterns by negative tone development | ROHM & HAAS ELECT MAT | 2015-01-28 | — | — | CN | disclosed |
| CN-102681341-B | Photoresist compositions and methods of forming photolithographic patterns | ROHM & HAAS ELECT MAT | 2015-01-28 | — | — | CN | disclosed |
| CN-104281006-A | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL CO | 2015-01-14 | — | — | CN | disclosed |
| US-8927200-B2 | Double patterning method | JSR CORPORATION (JP) | 2015-01-06 | — | — | US | disclosed |
| US-20150004545-A1 | PHOTORESIST COMPOSITION, COMPOUND, AND PRODUCTION METHOD THEREOF | JSR CORPORATION (JP) | 2015-01-01 | — | — | US | disclosed |
| EP-2487148-B1 | CYCLIC COMPOUND, METHOD FOR PRODUCING SAME, RADIATION SENSITIVE COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL CO (JP) | 2014-12-31 | — | — | EP | disclosed |
| CN-101943856-B | Composition containing hetero-substituted carbocyclic aryl component for photolithography and preparing method thereof | ROHM & HAAS ELECT MAT | 2014-12-17 | — | — | CN | disclosed |
| CN-104216224-A | Photoresists comprising carbamate component | ROHM & HAAS ELECT MAT | 2014-12-17 | — | — | CN | disclosed |
| US-8911927-B2 | Compositions and processes for immersion lithography | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2014-12-16 | — | — | US | disclosed |
| US-20140363766-A9 | RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2014-12-11 | — | — | US | disclosed |
| US-20140363773-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2014-12-11 | — | — | US | disclosed |
| US-20140363769-A1 | PHOTORESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, ACID GENERATING AGENT, AND PHOTODEGRADABLE BASE | JSR CORPORATION (JP) | 2014-12-11 | — | — | US | disclosed |
| US-20140356785-A1 | PHOTORESISTS COMPRISING CARBAMATE COMPONENT | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2014-12-04 | — | — | US | disclosed |
| CN-102161622-B | Compound provided with phenol substituent, method for preparing the compound, and resist composition containing the compound | KUMHO PETROCHEMICAL CO LTD | 2014-11-26 | — | — | CN | disclosed |
| US-8889344-B2 | Coating compositions | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2014-11-18 | — | — | US | disclosed |
| US-8889336-B2 | Radiation-sensitive resin composition and radiation-sensitive acid generating agent | JSR CORPORATION (JP) | 2014-11-18 | — | — | US | disclosed |
| US-8889335-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2014-11-18 | — | — | US | disclosed |
| US-8889919-B2 | Cyclic compound, process for production of the cyclic compound, radiation-sensitive composition, and method for formation of resist pattern | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2014-11-18 | — | — | US | disclosed |
| CN-102681348-B | Methods of forming photolithographic patterns | ROHM & HAAS ELECT MAT | 2014-11-12 | — | — | CN | disclosed |
| CN-102603701-B | Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns | ROHM & HAAS ELECT MAT | 2014-11-12 | — | — | CN | disclosed |
| US-8883937-B2 | Cyclic compound, manufacturing method therefor, radiation-sensitive composition, and method for forming a resist pattern | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2014-11-11 | — | — | US | disclosed |
| US-20140329178-A1 | CYCLIC COMPOUND, METHOD FOR PRODUCING THE SAME, RADIATION-SENSITIVE COMPOSITION, AND RESIST PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY,INC (JP) | 2014-11-06 | — | — | US | disclosed |
| US-20140329177-A1 | CYCLIC COMPOUND, METHOD FOR PRODUCING SAME, RADIATION-SENSITIVE COMPOSITION, AND RESIST PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2014-11-06 | — | — | US | disclosed |
| CN-104130172-A | Sulfonyl photoacid generators and photoresists comprising same | ROHM & HAAS ELECT MAT | 2014-11-05 | — | — | CN | disclosed |
| US-20140322648-A1 | COMPOSITIONS AND PROCESSES FOR IMMERSION LITHOGRAPHY | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2014-10-30 | — | — | US | disclosed |
| CN-101943858-B | Compositions comprising sulfonamide material and processes for photolithography | ROHM AND HAAS ELECTRONIC MATERIALS CO., LTD. (US) | 2014-10-29 | — | — | CN | disclosed |
| US-8871428-B2 | Compositions and processes for immersion lithography | ROHM AND HAAS ELECTRONICS MATERIALS LLC (US) | 2014-10-28 | — | — | US | disclosed |
| US-20140308615-A1 | CYCLIC COMPOUND, METHOD FOR PRODUCING SAME, COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2014-10-16 | — | — | US | disclosed |
| US-20140295347-A1 | ACID GENERATORS AND PHOTORESISTS COMPRISING SAME | ROHM AND HAAS ELECTRONIC MATERIALS, LLC (US) | 2014-10-02 | — | — | US | disclosed |
| US-20140295332-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE SAME | FUJIFILM CORPORATION (JP) | 2014-10-02 | — | — | US | disclosed |
| US-20140295350-A1 | RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORP (JP) | 2014-10-02 | — | — | US | disclosed |
| EP-2784584-A1 | Compositions comprising sulfonamide material and processes for photolithography | Rohm and Haas Electronic Materials LLC (US) | 2014-10-01 | — | — | EP | disclosed |
| CN-104076601-A | Acid generator and photoresist containing the same | ROHM & HAAS ELECT MAT | 2014-10-01 | — | — | CN | disclosed |
| CN-102540703-B | Compositions comprising base-reactive component and processes for photolithography | ROHM AND HAAS ELECTRONIC MATERIALS CO., LTD. (US) | 2014-10-01 | — | — | CN | disclosed |
| US-8846292-B2 | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2014-09-30 | — | — | US | disclosed |
| EP-2781501-A1 | CYCLIC COMPOUND, METHOD FOR PRODUCING SAME, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2014-09-24 | — | — | EP | disclosed |
| EP-2781504-A1 | CYCLIC COMPOUND, METHOD FOR PRODUCING SAME, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2014-09-24 | — | — | EP | disclosed |
| US-8841059-B2 | Crosslinking agent, negative resist composition, and pattern forming method using the negative resist composition | DAI NIPPON PRINTING CO., LTD. (JP) | 2014-09-23 | — | — | US | disclosed |
| CN-102591147-B | Compositions comprising sugar component and processes for photolithography | ROHM & HAAS ELECT MAT | 2014-09-10 | — | — | CN | disclosed |
| US-8829247-B2 | Cyclic compound, method of producing the same, radiation sensitive composition, and method of forming resist pattern | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2014-09-09 | — | — | US | disclosed |
| US-20140248561-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2014-09-04 | — | — | US | disclosed |
| US-8822140-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2014-09-02 | — | — | US | disclosed |
| US-8815490-B2 | Radiation-sensitive resin composition, polymer, and method for forming resist pattern | JSR CORPORATION (JP) | 2014-08-26 | — | — | US | disclosed |
| US-8815493-B2 | Resist pattern-forming method, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2014-08-26 | — | — | US | disclosed |
| US-8809476-B2 | Polymer | JSR CORPORATION (JP) | 2014-08-19 | — | — | US | disclosed |
| US-8808974-B2 | Method for forming pattern | JSR CORPORATION (JP) | 2014-08-19 | — | — | US | disclosed |
| US-8808975-B2 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2014-08-19 | — | — | US | disclosed |
| CN-102180822-B | Sulfonyl photoacid generators and photoresists comprising same | ROHM & HAAS ELECT MAT | 2014-08-13 | — | — | CN | disclosed |
| US-8795954-B2 | Resist pattern-forming method, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2014-08-05 | — | — | US | disclosed |
| CN-103958455-A | Cyclic compound, method for producing same, radiation-sensitive composition, and method for forming resist pattern | MITSUBISHI GAS CHEMICAL CO | 2014-07-30 | — | — | CN | disclosed |
| US-8790867-B2 | Methods of forming photolithographic patterns by negative tone development | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2014-07-29 | — | — | US | disclosed |
| CN-103946204-A | Cyclic compound, method for producing same, radiation-sensitive composition, and method for forming resist pattern | MITSUBISHI GAS CHEMICAL CO | 2014-07-23 | — | — | CN | disclosed |
| CN-103913951-A | Acid generators and photoresists comprising the same | ROHM & HAAS ELECT MAT | 2014-07-09 | — | — | CN | disclosed |
| CN-102483574-B | Radiation-sensitive resin composition and compound | JSR CORP | 2014-07-09 | — | — | CN | disclosed |
| US-8771923-B2 | Radiation-sensitive composition | JSR CORPORATION (JP) | 2014-07-08 | — | — | US | disclosed |
| US-8771917-B2 | Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns | ROHM AND HAAS ELECTRONICS MATERIALS LLC (US) | 2014-07-08 | — | — | US | disclosed |
| US-20140186767-A1 | ACID GENERATORS AND PHOTORESISTS COMPRISING SAME | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2014-07-03 | — | — | US | disclosed |
| CN-102053493-B | Radiation-sensitive composition, protective film and inter layer insulating film, and method for forming the same | JSR CORP | 2014-07-02 | — | — | CN | disclosed |
| US-8765355-B2 | Radiation sensitive resin composition, method for forming a pattern, polymer and compound | JSR CORPORATION (JP) | 2014-07-01 | — | — | US | disclosed |
| US-20140178825-A1 | DEVELOPER | JSR CORPORATION (JP) | 2014-06-26 | — | — | US | disclosed |
| US-8758978-B2 | Radiation-sensitive resin composition, resist pattern formation method, and polymer | JSR CORPORATION (JP) | 2014-06-24 | — | — | US | disclosed |
| EP-2743769-A1 | RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYPHENOL COMPOUND USED THEREIN, AND ALCOHOL COMPOUND CAPABLE OF BEING DERIVED THEREFROM | Mitsubishi Gas Chemical Company, Inc. (JP) | 2014-06-18 | — | — | EP | disclosed |
| EP-2743249-A1 | CYCLIC COMPOUND, METHOD FOR PRODUCING SAME, COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2014-06-18 | — | — | EP | disclosed |
| US-20140162190-A1 | FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2014-06-12 | — | — | US | disclosed |
| CN-103852973-A | Ionic thermal acid generators for low temperature applications | ROHM & HAAS ELECT MAT | 2014-06-11 | — | — | CN | disclosed |
| US-8748078-B2 | Cyclic compound, process for preparation thereof, radiation-sensitive composition, and method for formation of resist pattern | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2014-06-10 | — | — | US | disclosed |
| US-20140154625-A9 | RADIATION-SENSITIVE RESIN COMPOSITION, AND RADIATION-SENSITIVE ACID GENERATING AGENT | JSR CORPORATION (JP) | 2014-06-05 | — | — | US | disclosed |
| EP-2738605-A2 | Developer for resist pattern-forming method | JSR Corporation (JP) | 2014-06-04 | — | — | EP | disclosed |
| US-8741537-B2 | Positive resist composition and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2014-06-03 | — | — | US | disclosed |
| US-20140147794-A1 | METHOD OF FORMING PHOTORESIST PATTERN | JSR CORPORATION (JP) | 2014-05-29 | — | — | US | disclosed |
| US-20140134544-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2014-05-15 | — | — | US | disclosed |
| CN-102253596-B | Compositions and processes for immersion lithography | ROHM & HAAS ELECT MAT | 2014-05-14 | — | — | CN | disclosed |
| CN-101930173-B | Photoacid generators and photoresists comprising same | ROHM & HAAS ELECT MAT | 2014-05-14 | — | — | CN | disclosed |
| US-8722306-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2014-05-13 | — | — | US | disclosed |
| CN-102304068-B | Photoacid generators and photoresists comprising the same | ROHM & HAAS ELECT MAT | 2014-04-30 | — | — | CN | disclosed |
| US-8703401-B2 | Method for forming pattern and developer | JSR CORPORATION (JP) | 2014-04-22 | — | — | US | disclosed |
| CN-103733135-A | Resist composition, method for forming resist pattern, polyphenol compound used for the same, and alcohol compound derived from the polyphenol compound | MITSUBISHI GAS CHEMICAL CO | 2014-04-16 | — | — | CN | disclosed |
| US-8697343-B2 | Fluorine-containing polymer, purification method, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2014-04-15 | — | — | US | disclosed |
| US-8697335-B2 | Radiation-sensitive resin composition and compound | JSR CORPORATION (JP) | 2014-04-15 | — | — | US | disclosed |
| CN-103717562-A | Cyclic compound, method for producing same, composition, and method for forming resist pattern | MITSUBISHI GAS CHEMICAL CO | 2014-04-09 | — | — | CN | disclosed |
| CN-103676478-A | Photoresists comprising multiple acid generator compounds | ROHM & HAAS ELECT MAT | 2014-03-26 | — | — | CN | disclosed |
| CN-103676477-A | Acid generator compounds and photoresists comprising same | ROHM & HAAS ELECT MAT | 2014-03-26 | — | — | CN | disclosed |
| CN-103664870-A | Onium compounds and methods for preparing the same | ROHM & HAAS ELECT MAT | 2014-03-26 | — | — | CN | disclosed |
| US-20140080058-A1 | ACID GENERATORS AND PHOTORESISTS COMPRISING SAME | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2014-03-20 | — | — | US | disclosed |
| US-20140080060-A1 | ACID GENERATOR COMPOUNDS AND PHOTORESISTS COMPRISING SAME | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2014-03-20 | — | — | US | disclosed |
| US-20140080062-A1 | PHOTORESISTS COMPRISING MULTIPLE ACID GENERATOR COMPOUNDS | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2014-03-20 | — | — | US | disclosed |
| US-20140080056-A1 | ONIUM COMPOUNDS AND METHODS OF SYNTHESIS THEREOF | ROHM AND HAAS ELECTRONIC MATERIALS, LLC | 2014-03-20 | — | — | US | disclosed |
| US-20140080066-A1 | DOUBLE PATTERNING METHOD | JSR CORPORATION (JP) | 2014-03-20 | — | — | US | disclosed |
| US-20140080059-A1 | ACID GENERATOR COMPOUNDS AND PHOTORESISTS COMPRISING SAME | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2014-03-20 | — | — | US | disclosed |
| US-8669042-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2014-03-11 | — | — | US | disclosed |
| EP-2530525-B1 | Method for forming pattern and developer | JSR CORP (JP) | 2014-02-26 | — | — | EP | disclosed |
| CN-101526737-B | Immersion lithography compositions and immersion lithography method | ROHM & HAAS ELECT MAT | 2014-02-26 | — | — | CN | disclosed |
| US-8632945-B2 | Radiation-sensitive resin composition, monomer, polymer, and production method of radiation-sensitive resin composition | JSR CORPORATION (JP) | 2014-01-21 | — | — | US | disclosed |
| US-8614050-B2 | Polymers, photoresist compositions and methods of forming photolithographic patterns | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2013-12-24 | — | — | US | disclosed |
| US-8609891-B2 | Photoacid generators and photoresists comprising same | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2013-12-17 | — | — | US | disclosed |
| CN-101943860-B | Processes for photolithography | ROHM & HAAS ELECT MAT | 2013-12-11 | — | — | CN | disclosed |
| CN-103439861-A | Radiation-sensitive resin composition and compound | JSR CORP | 2013-12-11 | — | — | CN | disclosed |
| US-20130323653-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-12-05 | — | — | US | disclosed |
| CN-102346371-B | Photoresist compositions and methods of forming photolithographic patterns | ROHM & HAAS ELECT MAT | 2013-11-20 | — | — | CN | disclosed |
| US-20130302735-A1 | MONOMERS, POLYMERS AND PHOTORESIST COMPOSITIONS | ROHM & HAAS ELECT MAT (US) | 2013-11-14 | — | — | US | disclosed |
| US-20130295506-A1 | RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORP (JP) | 2013-11-07 | — | — | US | disclosed |
| US-20130295505-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, AND RADIATION-SENSITIVE ACID GENERATING AGENT | JSR CORP (JP) | 2013-11-07 | — | — | US | disclosed |
| US-20130280658-A1 | RADIATION-SENSITIVE COMPOSITION, AND COMPOUND | JSR CORPORATION (JP) | 2013-10-24 | — | — | US | disclosed |
| CN-103353707-A | Coating compositions for photoresists | ROHM & HAAS ELECT MAT | 2013-10-16 | — | — | CN | disclosed |
| CN-101907828-B | Radiation-sensitive composition, protective film and inter layer insulating film, and process for forming the same | JSR CORP | 2013-10-16 | — | — | CN | disclosed |
| US-20130256264-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-10-03 | — | — | US | disclosed |
| US-20130260316-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND RADIATION-SENSITIVE ACID GENERATING AGENT | JSR CORPORATION (JP) | 2013-10-03 | — | — | US | disclosed |
| US-8535871-B2 | Radiation-sensitive resin composition, method for forming a resist pattern, compound, and polymer | JSR CORPORATION (JP) | 2013-09-17 | — | — | US | disclosed |
| US-20130233825-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-09-12 | — | — | US | disclosed |
| US-20130233826-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-09-12 | — | — | US | disclosed |
| CN-101528653-B | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL CO | 2013-09-11 | — | — | CN | disclosed |
| US-8530146-B2 | Method for forming resist pattern | JSR CORPORATION (JP) | 2013-09-10 | — | — | US | disclosed |
| US-20130230804-A1 | PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE COMPOSITION | JSR CORPORATION (JP) | 2013-09-05 | — | — | US | disclosed |
| US-20130230803-A1 | RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2013-09-05 | — | — | US | disclosed |
| US-20130224661-A1 | PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20130224666-A1 | RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2013-08-29 | — | — | US | disclosed |
| US-20130216948-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-08-22 | — | — | US | disclosed |
| US-8507575-B2 | Radiation-sensitive resin composition, polymer, and compound | JSR CORPORATION (JP) | 2013-08-13 | — | — | US | disclosed |
| US-8501385-B2 | Positive-type radiation-sensitive composition, and resist pattern formation method | JSR CORPORATION (JP) | 2013-08-06 | — | — | US | disclosed |
| US-20130183624-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2013-07-18 | — | — | US | disclosed |
| EP-2615497-A1 | RESIST PATTERN FORMING METHOD | JSR Corporation (JP) | 2013-07-17 | — | — | EP | disclosed |
| CN-101395189-B | Fluorine-containing polymer, method for purifying same, and radiation-sensitive resin composition | JSR CORP | 2013-07-17 | — | — | CN | disclosed |
| WO-2013100158-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE SAME | FUJIFILM CORPORATION (JP) | 2013-07-04 | — | — | WO | disclosed |
| US-20130164695-A1 | METHOD FOR FORMING PATTERN | JSR CORPORATION (JP) | 2013-06-27 | — | — | US | disclosed |
| US-8470513-B2 | Radiation-sensitive resin composition and polymer | JSR CORPORATION (JP) | 2013-06-25 | — | — | US | disclosed |
| EP-2599814-A1 | COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2013-06-05 | — | — | EP | disclosed |
| CN-103121951-A | Monomers, polymers and photoresist compositions | ROHM & HAAS ELECT MAT | 2013-05-29 | — | — | CN | disclosed |
| US-20130122423-A1 | COMPOUND, RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2013-05-16 | — | — | US | disclosed |
| CN-103102251-A | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL CO | 2013-05-15 | — | — | CN | disclosed |
| US-8440384-B2 | Compound, salt, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2013-05-14 | — | — | US | disclosed |
| US-20130115559-A1 | METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS BY NEGATIVE TONE DEVELOPMENT | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2013-05-09 | — | — | US | disclosed |
| CN-103091978-A | Methods of forming photolithographic patterns by negative tone development | ROHM & HAAS ELECT MAT | 2013-05-08 | — | — | CN | disclosed |
| US-8435718-B2 | Upper layer-forming composition and photoresist patterning method | JSR CORPORATION (JP) | 2013-05-07 | — | — | US | disclosed |
| US-20130108962-A1 | RADIATION-SENSITIVE COMPOSITION | JSR CORPORATION (JP) | 2013-05-02 | — | — | US | disclosed |
| CN-103076720-A | Photoresist compositions | ROHM & HAAS ELECT MAT | 2013-05-01 | — | — | CN | disclosed |
| US-20130101942-A1 | METHOD FOR FORMING RESIST PATTERN, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2013-04-25 | — | — | US | disclosed |
| CN-101516970-B | Silicone resin composition and method for forming trench isolation | JSR CORP | 2013-04-24 | — | — | CN | disclosed |
| US-20130095428-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2013-04-18 | — | — | US | disclosed |
| CN-103052670-A | Compound, radiation-sensitive composition, and resist pattern formation method | MITSUBISHI GAS CHEMICAL CO | 2013-04-17 | — | — | CN | disclosed |
| US-20130089817-A1 | PHOTORESIST COMPOSITION AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2013-04-11 | — | — | US | disclosed |
| EP-2065428-B1 | METHOD FOR FORMING A SILICONE RESIN | JSR CORP (JP) | 2013-04-03 | — | — | EP | disclosed |
| US-20130078571-A1 | PHOTORESIST COMPOSITION, METHOD FOR PRODUCING PHOTORESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2013-03-28 | — | — | US | disclosed |
| CN-101256355-B | Composition for immersion lithography and immersion lithography method | ROHM & HAAS ELECT MAT | 2013-03-27 | — | — | CN | disclosed |
| US-20130065178-A1 | COMPOSITIONS AND PROCESSES FOR IMMERSION LITHOGRAPHY | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2013-03-14 | — | — | US | disclosed |
| US-20130059252-A1 | METHOD FOR FORMING RESIST PATTERN AND COMPOSITION FOR FORMING PROTECTIVE FILM | JSR CORPORATION (JP) | 2013-03-07 | — | — | US | disclosed |
| US-8389202-B2 | Polymer, radiation-sensitive composition, monomer, and method of producing compound | JSR CORPORATION (JP) | 2013-03-05 | — | — | US | disclosed |
| US-20130053526-A1 | POLYMER | JSR CORPORATION (JP) | 2013-02-28 | — | — | US | disclosed |
| US-8377627-B2 | Compound and radiation-sensitive composition | JSR CORPORATION (JP) | 2013-02-19 | — | — | US | disclosed |
| US-8361691-B2 | Radiation-sensitive composition and process for producing low-molecular compound for use therein | JSR CORPORATION (JP) | 2013-01-29 | — | — | US | disclosed |
| US-20130017376-A1 | NEGATIVE RESIST COMPOSITION, METHOD FOR PRODUCING RELIEF PATTERN USING THE SAME, AND ELECTRONIC COMPONENT USING THE SAME | DAI NIPPON PRINTING CO., LTD. (JP) | 2013-01-17 | — | — | US | disclosed |
| US-20130011783-A1 | MONOMERS, POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS | DOW GLOBAL TECHNOLOGIES LLC (US) | 2013-01-10 | — | — | US | disclosed |
| EP-1645908-B1 | Positive resist composition and pattern-forming method using the same | FUJIFILM CORP (JP) | 2013-01-09 | — | — | EP | disclosed |
| CN-102844707-A | Compositions comprising base-reactive component and processes for photolithography | ROHM & HAAS ELECT MAT | 2012-12-26 | — | — | CN | disclosed |
| US-8338077-B2 | Photoacid generators and photoresists comprising same | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2012-12-25 | — | — | US | disclosed |
| US-8334087-B2 | Polymer, radiation-sensitive composition, monomer, and method of producing compound | JSR CORPORATION (JP) | 2012-12-18 | — | — | US | disclosed |
| US-20120308938-A1 | METHOD FOR FORMING PATTERN AND DEVELOPER | JSR CORPORATION (JP) | 2012-12-06 | — | — | US | disclosed |
| EP-2530525-A1 | Method for forming pattern and developer | JSR Corporation (JP) | 2012-12-05 | — | — | EP | disclosed |
| US-8318582-B2 | Method of forming a trench isolation | JSR CORPORATION (JP) | 2012-11-27 | — | — | US | disclosed |
| US-20120295197-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND METHOD FOR FORMING A RESIST PATTERN | JSR CORPORATION (JP) | 2012-11-22 | — | — | US | disclosed |
| US-20120295198-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2012-11-22 | — | — | US | disclosed |
| US-20120282546-A1 | CYCLIC COMPOUND, PRODUCTION PROCESS THEREOF, RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-11-08 | — | — | US | disclosed |
| US-20120276482-A1 | RADIATION SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING A PATTERN, POLYMER AND COMPOUND | JSR CORPORATION (JP) | 2012-11-01 | — | — | US | disclosed |
| EP-2336826-B1 | Sulfonyl photoacid generators and photoresists comprising same | ROHM & HAAS ELECT MAT (US) | 2012-10-24 | — | — | EP | disclosed |
| CN-102753509-A | Cyclic compound, process for production of the cyclic compound, radiation-sensitive composition, and method for formation of resist pattern | MITSUBISHI GAS CHEMICAL CO | 2012-10-24 | — | — | CN | disclosed |
| EP-2510398-A2 | COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY | Rohm and Haas Electronic Materials LLC (US) | 2012-10-17 | — | — | EP | disclosed |
| EP-1961739-B1 | NOVEL COMPOUND, POLYMER, AND RESIN COMPOSITION | JSR CORP (JP) | 2012-10-17 | — | — | EP | disclosed |
| US-20120251947-A1 | CYCLIC COMPOUND, METHOD OF PRODUCING THE SAME, RADIATION SENSITIVE COMPOSITION, AND METHOD OF FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-10-04 | — | — | US | disclosed |
| EP-2505576-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND RESIST PATTERN FORMATION METHOD | Mitsubishi Gas Chemical Company, Inc. (JP) | 2012-10-03 | — | — | EP | disclosed |
| CN-101788763-B | Compositions and processes for immersion lithography | ROHM & HAAS ELECT MAT | 2012-10-03 | — | — | CN | disclosed |
| US-20120244478-A1 | RESIST PATTERN FORMATION METHOD | JSR CORPORATION (JP) | 2012-09-27 | — | — | US | disclosed |
| EP-2503392-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND RESIST PATTERN FORMATION METHOD | JSR Corporation (JP) | 2012-09-26 | — | — | EP | disclosed |
| US-8273837-B2 | Compound, polymer, and resin composition | JSR CORPORATION (JP) | 2012-09-25 | — | — | US | disclosed |
| US-20120237876-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, MONOMER, POLYMER, AND PRODUCTION METHOD OF RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2012-09-20 | — | — | US | disclosed |
| CN-102681341-A | Photoresist compositions and methods of forming photolithographic patterns | ROHM & HAAS ELECT MAT | 2012-09-19 | — | — | CN | disclosed |
| CN-102681336-A | Compositions comprising base-reactive component and processes for photolithography | ROHM & HAAS ELECT MAT | 2012-09-19 | — | — | CN | disclosed |
| CN-102681348-A | Photoresist compositions and methods of forming photolithographic patterns | ROHM & HAAS ELECT MAT | 2012-09-19 | — | — | CN | disclosed |
| US-8263315-B2 | Pattern-forming method | JSR CORPORATION (JP) | 2012-09-11 | — | — | US | disclosed |
| CN-102653576-A | Polymers, photoresist compositions and methods of forming photolithographic patterns | ROHM & HAAS ELECT MAT | 2012-09-05 | — | — | CN | disclosed |
| US-8257902-B2 | Compositons and processes for immersion lithography | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2012-09-04 | — | — | US | disclosed |
| US-20120219902-A1 | PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2012-08-30 | — | — | US | disclosed |
| US-20120219901-A1 | PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2012-08-30 | — | — | US | disclosed |
| EP-2492749-A1 | Photoresist compositions and methods of forming photolithographic patterns | Rohm and Haas Electronic Materials LLC (US) | 2012-08-29 | — | — | EP | disclosed |
| EP-2492750-A1 | Photoresist compositions and methods of forming photolithographic patterns | Rohm and Haas Electronic Materials LLC (US) | 2012-08-29 | — | — | EP | disclosed |
| EP-2487148-A1 | CYCLIC COMPOUND, METHOD FOR PRODUCING SAME, RADIATION SENSITIVE COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2012-08-15 | — | — | EP | disclosed |
| US-8241833-B2 | Positive resist composition and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2012-08-14 | — | — | US | disclosed |
| US-20120202150-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2012-08-09 | — | — | US | disclosed |
| EP-2485090-A1 | Radiation-sensitive resin composition for forming resist pattern | JSR Corporation (JP) | 2012-08-08 | — | — | EP | disclosed |
| CN-102617789-A | Polymers, photoresist compositions and methods of forming photolithographic patterns | DOW GLOBAL TECHNOLOGIES LLC | 2012-08-01 | — | — | CN | disclosed |
| CN-102617790-A | Polymers, photoresist compositions and methods of forming photolithographic patterns | ROHM & HAAS ELECT MAT | 2012-08-01 | — | — | CN | disclosed |
| CN-102621806-A | Lactone photoacid generators and resins and photoresists comprising same | ROHM & HAAS ELECT MAT | 2012-08-01 | — | — | CN | disclosed |
| CN-102603701-A | Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns | ROHM & HAAS ELECT MAT | 2012-07-25 | — | — | CN | disclosed |
| CN-102603586-A | Base reactive photoacid generators and photoresists comprising same | ROHM & HAAS ELECT MAT | 2012-07-25 | — | — | CN | disclosed |
| US-20120183908-A1 | RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2012-07-19 | — | — | US | disclosed |
| EP-2476662-A1 | CYCLIC COMPOUND, PROCESS FOR PREPARATION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2012-07-18 | — | — | EP | disclosed |
| CN-102596874-A | Cyclic compound, method for producing same, radiation-sensitive composition, and method for forming resist pattern | MITSUBISHI GAS CHEMICAL CO | 2012-07-18 | — | — | CN | disclosed |
| CN-102597034-A | Cyclic compound, manufacturing method therefor, radiation-sensitive composition, and method for forming a resist pattern | MITSUBISHI GAS CHEMICAL CO | 2012-07-18 | — | — | CN | disclosed |
| CN-102591147-A | Compositions comprising sugar component and processes for photolithography | ROHM & HAAS ELECT MAT | 2012-07-18 | — | — | CN | disclosed |
| US-20120178024-A1 | POLYMER, RADIATION-SENSITIVE COMPOSITION, MONOMER, AND METHOD OF PRODUCING COMPOUND | JSR CORPORATION (JP) | 2012-07-12 | — | — | US | disclosed |
| EP-2474565-A1 | CYCLIC COMPOUND, MANUFACTURING METHOD THEREFOR, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING A RESIST PATTERN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2012-07-11 | — | — | EP | disclosed |
| EP-2474538-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2012-07-11 | — | — | EP | disclosed |
| EP-2474518-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2012-07-11 | — | — | EP | disclosed |
| CN-102566323-A | Compositions and processes for immersion lithography | ROHM & HAAS ELECT MAT | 2012-07-11 | — | — | CN | disclosed |
| US-20120171617-A1 | POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS | DOW GLOBAL TECHNOLOGIES LLC (US) | 2012-07-05 | — | — | US | disclosed |
| US-20120171615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-07-05 | — | — | US | disclosed |
| US-20120171626-A1 | COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2012-07-05 | — | — | US | disclosed |
| US-20120171612-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER | JSR CORPORATION (JP) | 2012-07-05 | — | — | US | disclosed |
| US-20120171613-A1 | UPPER LAYER FILM-FORMING COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN | JSR CORPORATION (JP) | 2012-07-05 | — | — | US | disclosed |
| US-20120171379-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-07-05 | — | — | US | disclosed |
| EP-2472320-A2 | Compositions comprising base-reactive component and processes for photolithography | Rohm and Haas Electronic Materials LLC (US) | 2012-07-04 | — | — | EP | disclosed |
| EP-2472326-A1 | Polymers, photoresist compositions and methods of forming photolithographic patterns | Rohm and Haas Electronic Materials LLC (US) | 2012-07-04 | — | — | EP | disclosed |
| EP-2472324-A1 | Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns | Rohm and Haas Electronic Materials LLC (US) | 2012-07-04 | — | — | EP | disclosed |
| EP-2472325-A1 | Polymers, photoresist compositions and methods of forming photolithographic patterns | Rohm and Haas Electronic Materials LLC (US) | 2012-07-04 | — | — | EP | disclosed |
| CN-102540703-A | Compositions comprising base-reactive component and processes for photolithography | DOW GLOBAL TECHNOLOGIES LLC | 2012-07-04 | — | — | CN | disclosed |
| US-8211624-B2 | Method for pattern formation and resin composition for use in the method | JSR CORPORATION (JP) | 2012-07-03 | — | — | US | disclosed |
| US-20120164576-A1 | CYCLIC COMPOUND, PROCESS FOR PREPARATION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120164575-A1 | CYCLIC COMPOUND, MANUFACTURING METHOD THEREFOR, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING A RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120164582-A1 | RADIATION-SENSITIVE COMPOSITION AND COMPOUND | JSR CORPORATION (JP) | 2012-06-28 | — | — | US | disclosed |
| US-8206888-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2012-06-26 | — | — | US | disclosed |
| US-20120156621-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2012-06-21 | — | — | US | disclosed |
| US-20120156615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-21 | — | — | US | disclosed |
| US-20120156612-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING A RESIST PATTERN, COMPOUND, AND POLYMER | JSR CORPORATION (JP) | 2012-06-21 | — | — | US | disclosed |
| US-20120156595-A1 | COMPOSITIONS COMPRISING SUGAR COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2012-06-21 | — | — | US | disclosed |
| US-20120148952-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND | JSR CORPORATION (JP) | 2012-06-14 | — | — | US | disclosed |
| CN-102498104-A | Cyclic compound, process for production of the cyclic compound, radiation-sensitive composition, and method for formation of resist pattern | MITSUBISHI GAS CHEMICAL CO | 2012-06-13 | — | — | CN | disclosed |
| US-8198007-B2 | Negative-working resist composition and pattern forming method using the same | DAI NIPPON PRINTING CO., LTD. (JP) | 2012-06-12 | — | — | US | disclosed |
| EP-2461213-A1 | Polymers, photoresist compositions and methods of forming photolithographic patterns | Rohm and Haas Electronic Materials LLC (US) | 2012-06-06 | — | — | EP | disclosed |
| CN-102483574-A | Radiation-sensitive resin composition and compound | JSR CORP | 2012-05-30 | — | — | CN | disclosed |
| US-20120129108-A1 | BASE REACTIVE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2012-05-24 | — | — | US | disclosed |
| US-20120129104-A1 | LACTONE PHOTOACID GENERATORS AND RESINS AND PHOTORESISTS COMPRISING SAME | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2012-05-24 | — | — | US | disclosed |
| US-20120122030-A1 | COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY | DOW GLOBAL TECHNOLOGIES LLC (US) | 2012-05-17 | — | — | US | disclosed |
| EP-2058318-B1 | PHOSPHATE ESTER COMPOUND, METAL SALT THEREOF, DENTAL MATERIAL, AND DENTAL COMPOSITION | MITSUI CHEMICALS INC (JP) | 2012-05-16 | — | — | EP | disclosed |
| EP-2453309-A2 | Compositions comprising sugar component and processes for photolithography | Rohm and Haas Electronic Materials LLC (US) | 2012-05-16 | — | — | EP | disclosed |
| EP-2453308-A1 | Compositions comprising base-reactive component and processes for photolithography | Rohm and Haas Electronic Materials LLC (US) | 2012-05-16 | — | — | EP | disclosed |
| EP-2452932-A2 | Base reactive photoacid generators and photoresists comprising same | Rohm and Haas Electronic Materials LLC (US) | 2012-05-16 | — | — | EP | disclosed |
| EP-2452941-A1 | Lactone photoacid generators and resins and photoresists comprising same | Rohm and Haas Electronic Materials LLC (US) | 2012-05-16 | — | — | EP | disclosed |
| US-20120115084-A1 | CROSSLINKING AGENT, NEGATIVE RESIST COMPOSITION, AND PATTERN FORMING METHOD USING THE NEGATIVE RESIST COMPOSITION | DAI NIPPON PRINTING CO., LTD. (JP) | 2012-05-10 | — | — | US | disclosed |
| CN-102445848-A | Photoresist compositions and methods of forming photolithographic patterns | ROHM & HAAS ELECT MAT | 2012-05-09 | — | — | CN | disclosed |
| US-8173351-B2 | Compound and radiation-sensitive composition | JSR CORPORATION (JP) | 2012-05-08 | — | — | US | disclosed |
| EP-1950610-B1 | IMMERSION LITHOGRAPHIC COMPOSITION FOR FORMING UPPER FILM AND METHOD FOR FORMING PHOTORESIST PATTERN | JSR CORP (JP) | 2012-05-02 | — | — | EP | disclosed |
| US-8163462-B2 | Photosensitive composition, method for forming pattern, and method for manufacturing semiconductor device | RENESAS ELECTRONICS CORPORATION (JP) | 2012-04-24 | — | — | US | disclosed |
| US-20120094234-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND METHOD FOR FORMING RESIST PATTERN | JSR CORPORATION (JP) | 2012-04-19 | — | — | US | disclosed |
| CN-1881085-B | Compositions and methods for immersion lithography | ROHM & HAAS ELECT MAT | 2012-04-18 | — | — | CN | disclosed |
| US-8158338-B2 | Resist sensitizer | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2012-04-17 | — | — | US | disclosed |
| US-20120065291-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND COMPOUND | JSR CORPORATION (JP) | 2012-03-15 | — | — | US | disclosed |
| US-20120064456-A1 | PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS | DOW GLOBAL TECHNOLOGIES LLC (US) | 2012-03-15 | — | — | US | disclosed |
| EP-2428843-A1 | Photoresist compositions and methods of forming photolithographic patterns | Rohm and Haas Electronic Materials LLC (US) | 2012-03-14 | — | — | EP | disclosed |
| US-20120058429-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND POLYMER | JSR CORPORATION (JP) | 2012-03-08 | — | — | US | disclosed |
| EP-2420891-A1 | Compositions and processes for immersion lithography | Rohm and Haas Electronic Materials LLC (US) | 2012-02-22 | — | — | EP | disclosed |
| EP-2420892-A1 | Compositions and processes for immersion lithography | Rohm and Haas Electronic Materials LLC (US) | 2012-02-22 | — | — | EP | disclosed |
| CN-102346371-A | Photoresist compositions and methods of forming photolithographic patterns | ROHM & HAAS ELECT MAT | 2012-02-08 | — | — | CN | disclosed |
| US-8110339-B2 | Multi-tone resist compositions | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2012-02-07 | — | — | US | disclosed |
| US-8110334-B2 | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-02-07 | — | — | US | disclosed |
| US-20120028198-A1 | UPPER LAYER-FORMING COMPOSITION AND PHOTORESIST PATTERNING METHOD | JSR CORPORATION (JP) | 2012-02-02 | — | — | US | disclosed |
| CN-102304068-A | Photoacid generators and photoresists comprising the same | ROHM & HAAS ELECT MAT | 2012-01-04 | — | — | CN | disclosed |
| CN-102279520-A | Novel polymers and photoresist compositions | — | 2011-12-14 | — | — | CN | disclosed |
| EP-2390722-A1 | Photoresist compositions and methods of forming photolithographic patterns | Rohm and Haas Electronic Materials LLC (US) | 2011-11-30 | — | — | EP | disclosed |
| US-20110287361-A1 | PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2011-11-24 | — | — | US | disclosed |
| CN-102253596-A | Compositions and processes for immersion lithography | ROHM & HAAS ELECT MAT | 2011-11-23 | — | — | CN | disclosed |
| US-8053378-B2 | Modified phenolic resin, epoxy resin composition containing the same, and prepreg containing the composition | MITSUI CHEMICALS, INC. (JP) | 2011-11-08 | — | — | US | disclosed |
| US-20110269070-A1 | PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2011-11-03 | — | — | US | disclosed |
| US-20110269074-A1 | NOVEL POLYMERS AND PHOTORESIST COMPOSITIONS | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2011-11-03 | — | — | US | disclosed |
| EP-2383611-A2 | Photoacid generators and photoresists comprising same | Rohm and Haas Electronic Materials LLC (US) | 2011-11-02 | — | — | EP | disclosed |
| CN-102225924-A | Photoacid generators and photoresists comprising same | ROHM & HAAS ELECT MAT | 2011-10-26 | — | — | CN | disclosed |
| US-8043786-B2 | Acid generators, sulfonic acids, sulfonyl halides, and radiation sensitive resin compositions | JSR CORPORATION (JP) | 2011-10-25 | — | — | US | disclosed |
| US-20110257693-A1 | HARD TISSUE ANCHORS AND DELIVERY DEVICES | TC1 LLC | 2011-10-20 | — | — | US | disclosed |
| US-20110255061-A1 | COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY | ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. (US) | 2011-10-20 | — | — | US | disclosed |
| US-20110255069-A1 | COMPOSITIONS AND PROCESSES FOR IMMERSION LITHOGRAPHY | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2011-10-20 | — | — | US | disclosed |
| US-20110250542-A1 | SULFONYL PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2011-10-13 | — | — | US | disclosed |
| US-20110250537-A1 | CHOLATE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2011-10-13 | — | — | US | disclosed |
| US-20110250538-A1 | PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2011-10-13 | — | — | US | disclosed |
| CN-102212100-A | Cholate photoacid generators and photoresists comprising same | ROHM & HAAS ELECT MAT | 2011-10-12 | — | — | CN | disclosed |
| EP-2372455-A2 | Photoacid generators and photoresists comprising the same | Rohm and Haas Electronic Materials LLC (US) | 2011-10-05 | — | — | EP | disclosed |
| EP-2372456-A2 | Novel polymers and photoresist compositions | Rohm and Haas Electronic Materials LLC (US) | 2011-10-05 | — | — | EP | disclosed |
| US-8026039-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2011-09-27 | — | — | US | disclosed |
| CN-102180822-A | Sulfonyl photoacid generators and photoresists comprising same | ROHM & HAAS ELECT MAT | 2011-09-14 | — | — | CN | disclosed |
| EP-2360153-A2 | Photoacid generators and photoresists comprising same | Rohm and Haas Electronic Materials LLC (US) | 2011-08-24 | — | — | EP | disclosed |
| CN-102161622-A | Compound provided with phenol substituent, method for preparing the compound, and resist composition containing the compound | KUMHO PETROCHEMICAL CO LTD | 2011-08-24 | — | — | CN | disclosed |
| US-20110198730-A1 | HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD | LION CORPORATION | 2011-08-18 | — | — | US | disclosed |
| EP-1764647-B1 | Use of a positive resist composition for immersion exposure, positive resist composition and immersion lithographic pattern-forming method using the same | FUJIFILM CORP (JP) | 2011-08-17 | — | — | EP | disclosed |
| US-7977442-B2 | Radiation-sensitive composition, polymer and monomer | JSR CORPORATION (JP) | 2011-07-12 | — | — | US | disclosed |
| CN-102109760-A | Resist pattern forming method | JSR CORP | 2011-06-29 | — | — | CN | disclosed |
| US-7968268-B2 | Compositions and processes for immersion lithography | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2011-06-28 | — | — | US | disclosed |
| US-20110151378-A1 | RADIATION-SENSITIVE RESIN COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, POLYMER, AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2011-06-23 | — | — | US | disclosed |
| EP-2336826-A2 | Sulfonyl photoacid generators and photoresists comprising same | Rohm and Haas Electronic Materials LLC (US) | 2011-06-22 | — | — | EP | disclosed |
| WO-2011072307-A2 | COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY | ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. (US) | 2011-06-16 | — | — | WO | disclosed |
| US-20110143281-A1 | COATING COMPOSITIONS FOR PHOTORESISTS | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2011-06-16 | — | — | US | disclosed |
| EP-2332960-A2 | Cholate photoacid generators and photoresists comprising same | Rohm and Haas Electronic Materials LLC (US) | 2011-06-15 | — | — | EP | disclosed |
| CN-101084250-B | Modified phenol resin, epoxy resin composition containing the same, and prepreg using the composition | MITSUI CHEMICALS INC | 2011-06-15 | — | — | CN | disclosed |
| CN-102099749-A | Positive-type radiation-sensitive composition, and resist pattern formation method | JSR CORP | 2011-06-15 | — | — | CN | disclosed |
| US-20110123937-A1 | COMPOSITIONS AND PROCESSES FOR IMMERSION LITHOGRAPHY | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2011-05-26 | — | — | US | disclosed |
| US-20110117489-A1 | COMPOUND AND RADIATION-SENSITIVE COMPOSITION | JSR CORPORATION (JP) | 2011-05-19 | — | — | US | disclosed |
| CN-102053493-A | Radiation-sensitive composition, protective film and inter layer insulating film, and method for forming the same | JSR CORP | 2011-05-11 | — | — | CN | disclosed |
| US-20110101503-A1 | HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD | LION CORPORATION (JP) | 2011-05-05 | — | — | US | disclosed |
| US-20110104612-A1 | POSITIVE-TYPE RADIATION-SENSITIVE COMPOSITION, AND RESIST PATTERN FORMATION METHOD | JSR CORPORATION (JP) | 2011-05-05 | — | — | US | disclosed |
| CN-102037030-A | Radiation-sensitive resin composition for liquid immersion exposure, polymer and method for forming resist pattern | JSR CORP | 2011-04-27 | — | — | CN | disclosed |
| EP-2309332-A1 | POSITIVE-TYPE RADIATION-SENSITIVE COMPOSITION, AND RESIST PATTERN FORMATION METHOD | JSR Corporation (JP) | 2011-04-13 | — | — | EP | disclosed |
| US-20110076622-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-03-31 | — | — | US | disclosed |
| CN-1708728-B | Radiation-sensitive resin composition | JSR CORP | 2011-03-16 | — | — | CN | disclosed |
| US-7906268-B2 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2011-03-15 | — | — | US | disclosed |
| US-20110053340-A1 | METHOD OF FORMING A TRENCH ISOLATION | JSR CORPORATION (JP) | 2011-03-03 | — | — | US | disclosed |
| US-7897821-B2 | Sulfonium compound | JSR CORPORATION (JP) | 2011-03-01 | — | — | US | disclosed |
| EP-2280308-A1 | Processes for photolithography | Rohm and Haas Electronic Materials, L.L.C. (US) | 2011-02-02 | — | — | EP | disclosed |
| CN-101959908-A | Radiation-sensitive composition, polymer and monomer | JSR CORP | 2011-01-26 | — | — | CN | disclosed |
| US-7871751-B2 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2011-01-18 | — | — | US | disclosed |
| CN-101943856-A | Composition containing hetero-substituted carbocyclic aryl component for photolithography and preparing method thereof | ROHM & HAAS ELECT MAT | 2011-01-12 | — | — | CN | disclosed |
| CN-101943860-A | Lithographic process | ROHM & HAAS ELECT MAT | 2011-01-12 | — | — | CN | disclosed |
| CN-101943857-A | Compositions and processes for photolithography | ROHM & HAAS ELECT MAT | 2011-01-12 | — | — | CN | disclosed |
| CN-101943858-A | Compositions comprising sulfonamide material and processes for photolithography | ROHM & HAAS ELECT MAT | 2011-01-12 | — | — | CN | disclosed |
| US-20110003257-A1 | PROCESSES FOR PHOTOLITHOGRAPHY | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2011-01-06 | — | — | US | disclosed |
| US-20100331440-A1 | RADIATION-SENSITIVE COMPOSITION, POLYMER AND MONOMER | JSR CORPORATION (JP) | 2010-12-30 | — | — | US | disclosed |
| EP-2267532-A1 | Photoacid generators and photoresists comprising same | Rohm and Haas Electronic Materials, L.L.C. (US) | 2010-12-29 | — | — | EP | disclosed |
| CN-101930173-A | Photic acid producing agent and its photoresist | ROHM & HAAS ELECT MAT | 2010-12-29 | — | — | CN | disclosed |
| US-20100323294-A1 | PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2010-12-23 | — | — | US | disclosed |
| US-20100324329-A1 | COMPOUND | JSR CORPORATION (JP) | 2010-12-23 | — | — | US | disclosed |
| US-20100323292-A1 | RESIST PATTERN FORMATION METHOD, AND RESIN COMPOSITION CAPABLE OF INSOLUBILIZING RESIST PATTERN | JSR CORPORATION (JP) | 2010-12-23 | — | — | US | disclosed |
| US-20100310991-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-12-09 | — | — | US | disclosed |
| US-20100310987-A1 | POLYMER, RADIATION-SENSITIVE COMPOSITION, MONOMER, AND METHOD OF PRODUCING COMPOUND | JSR CORPORATION (JP) | 2010-12-09 | — | — | US | disclosed |
| CN-101907828-A | Radiation-ray sensitive composition, diaphragm, interlayer dielectric and their formation method | JSR CORP | 2010-12-08 | — | — | CN | disclosed |
| US-20100304290-A1 | Compositions and processes for photolithography | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2010-12-02 | — | — | US | disclosed |
| CN-101182372-B | Weather-resistant polycarbonate containing N,N'-oxalyl diphenylamine structure unit, manufacturing method therefore and products made thereby | GEN ELECTRIC | 2010-12-01 | — | — | CN | disclosed |
| CN-101900953-A | Compositions comprising block polymer and processes for photolithography | ROHM & HAAS ELECT MAT | 2010-12-01 | — | — | CN | disclosed |
| US-20100297549-A1 | Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2010-11-25 | — | — | US | disclosed |
| US-20100297550-A1 | Compositions comprising sulfonamide material and processes for photolithography | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2010-11-25 | — | — | US | disclosed |
| US-20100297553-A1 | POSITIVE RESIST COMPOSITION AND PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-11-25 | — | — | US | disclosed |
| CN-1916760-B | Acid generator, sulfonic acid derivative and radiation-sensitive resin composition | JSR CORP | 2010-10-13 | — | — | CN | disclosed |
| CN-1877450-B | Coating compositions | ROHM & HAAS ELECT MAT | 2010-10-13 | — | — | CN | disclosed |
| US-7812105-B2 | Compound, polymer, and radiation-sensitive composition | JSR CORPORATION (JP) | 2010-10-12 | — | — | US | disclosed |
| US-7811740-B2 | comprising acrylate resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, and a surfactant containing a fluorine compound or fluorine containing polyethers; resist pattern with good sensitivity, resolution, adhesion, and little in development defects; for an immersion exposure | FUJIFILM CORPORATION (JP) | 2010-10-12 | — | — | US | disclosed |
| US-20100248167-A1 | PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2010-09-30 | — | — | US | disclosed |
| US-7803511-B2 | resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits | FUJIFILM CORPORATION (JP) | 2010-09-28 | — | — | US | disclosed |
| US-20100239980-A1 | NEGATIVE-WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | DAI NIPPON PRINTING CO., LTD. (JP) | 2010-09-23 | — | — | US | disclosed |
| CN-1780813-B | Acid generator, sulfonic acid, sulfonyl halide, and radiation-sensitive resin composition | JSR CORP | 2010-09-22 | — | — | CN | disclosed |
| EP-1586594-B1 | ACRYLIC COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORP (JP) | 2010-09-15 | — | — | EP | disclosed |
| CN-101827813-A | Sulfone compound, sulfonate and radiation-sensitive resin composition | JSR CORP | 2010-09-08 | — | — | CN | disclosed |
| US-20100221659-A1 | COMPOUND, SALT, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-09-02 | — | — | US | disclosed |
| US-7781141-B2 | Compositions and processes for immersion lithography | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2010-08-24 | — | — | US | disclosed |
| US-7776506-B2 | Coating compositions for photoresists | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2010-08-17 | — | — | US | disclosed |
| CN-1737685-B | Composition and process for immersion lithography | ROHM & HAAS ELECT MAT | 2010-08-04 | — | — | CN | disclosed |
| US-20100190104-A1 | METHOD FOR PATTERN FORMATION AND RESIN COMPOSITION FOR USE IN THE METHOD | JSR CORPORATION (JP) | 2010-07-29 | — | — | US | disclosed |
| CN-101788763-A | compositions and processes for immersion lithography | ROHM & HAAS ELECT MAT | 2010-07-28 | — | — | CN | disclosed |
| US-20100178608-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-07-15 | — | — | US | disclosed |
| US-20100173245-A1 | Compositions comprising carboxy component and processes for photolithography | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2010-07-08 | — | — | US | disclosed |
| US-20100167024-A1 | NEGATIVE-TONE RADIATION-SENSITIVE COMPOSITION, CURED PATTERN FORMING METHOD, AND CURED PATTERN | JSR CORPORATION (JP) | 2010-07-01 | — | — | US | disclosed |
| EP-1253470-B1 | Radiation-sensitive resin composition | JSR CORP (JP) | 2010-06-16 | — | — | EP | disclosed |
| EP-2189847-A2 | Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography | Rohm and Haas Electronic Materials LLC (US) | 2010-05-26 | — | — | EP | disclosed |
| EP-2189844-A2 | Compositions comprising sulfonamide material and processes for photolithography | Rohm and Haas Electronic Materials LLC (US) | 2010-05-26 | — | — | EP | disclosed |
| EP-2189845-A2 | Compositions and processes for photolithography | Rohm and Haas Electronic Materials LLC (US) | 2010-05-26 | — | — | EP | disclosed |
| EP-2189846-A1 | Compositions comprising block polymer and processes for photolithography | Rohm and Haas Electronic Materials LLC (US) | 2010-05-26 | — | — | EP | disclosed |
| WO-2010054760-A1 | POLYURETHANE DISPERSIONS FOR COATINGS HAVING BARRIER PROPERTIES | BAYER MATERIALSCIENCE AG (DE) | 2010-05-20 | — | — | WO | disclosed |
| EP-2186839-A1 | Polyurethane dispersions for coating with barrier features | Bayer MaterialScience AG (DE) | 2010-05-19 | — | — | EP | disclosed |
| CN-1942825-B | Resist composition | MITSUBISHI GAS CHEMICAL CO | 2010-05-12 | — | — | CN | disclosed |
| CN-1821869-B | Photoresist compositions | ROHM & HAAS ELECT MAT | 2010-05-12 | — | — | CN | disclosed |
| US-7704668-B1 | Photoresist compositions and methods and articles of manufacture comprising same | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2010-04-27 | — | — | US | disclosed |
| US-7704669-B2 | Acrylic polymer and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2010-04-27 | — | — | US | disclosed |
| CN-1732408-B | Radiation-sensitive resin composition | JSR CORP | 2010-04-21 | — | — | CN | disclosed |
| US-20100068650-A1 | POSITIVE-WORKING RADIATION-SENSITIVE COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION | JSR CORPORATION (JP) | 2010-03-18 | — | — | US | disclosed |
| EP-1225480-B1 | Radiation-sensitive resin composition | JSR CORP (JP) | 2010-03-17 | — | — | EP | disclosed |
| US-20100047709-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2010-02-25 | — | — | US | disclosed |
| US-20100040977-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-02-18 | — | — | US | disclosed |
| US-20100028800-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-02-04 | — | — | US | disclosed |
| US-20100024683-A1 | PHOSPHATE COMPOUND, METAL SALT THEREOF, DENTAL MATERIAL AND DENTAL COMPOSITION | MITSUI CHEMICALS, INC. (JP) | 2010-02-04 | — | — | US | disclosed |
| US-20100029057-A1 | SILICONE RESIN COMPOSITION AND METHOD OF FORMING A TRENCH ISOLATION | JSR CORPORATION (JP) | 2010-02-04 | — | — | US | disclosed |
| WO-2010005428-A1 | RESIST SENSITIZER | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT) (US) | 2010-01-14 | — | — | WO | disclosed |
| US-20100009289-A1 | RESIST SENSITIZER | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2010-01-14 | — | — | US | disclosed |
| US-20100003615-A1 | UPPER LAYER-FORMING COMPOSITION AND PHOTORESIST PATTERNING METHOD | JSR CORPORATION (JP) | 2010-01-07 | — | — | US | disclosed |
| EP-1521794-B1 | WEATHERABLE POLYCARBONATES COMPRISING OXANILIDE STRUCTURAL UNITS, METHOD, AND ARTICLES MADE THEREFROM | SABIC INNOVATIVE PLASTICS IP (NL) | 2010-01-06 | — | — | EP | disclosed |
| US-7638261-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2009-12-29 | — | — | US | disclosed |
| US-20090318652-A1 | NOVEL COMPOUND, POLYMER, AND RESIN COMPOSITION | JSR CORPORATION (JP) | 2009-12-24 | — | — | US | disclosed |
| US-20090317742-A1 | Photosensitive composition, method for forming pattern, and method for manufacturing semiconductor device | NEC ELECTRONICS CORPORATION (JP) | 2009-12-24 | — | — | US | disclosed |
| EP-1238972-B1 | Novel carbazole derivative and chemically amplified radiation-sensitive resin composition | JSR CORP (JP) | 2009-12-16 | — | — | EP | disclosed |
| US-20090305161-A1 | LIQUID IMMERSION LITHOGRAPHY | JSR CORPORATION (JP) | 2009-12-10 | — | — | US | disclosed |
| EP-2131240-A1 | POSITIVE-WORKING RADIATION-SENSITIVE COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION | JSR Corporation (JP) | 2009-12-09 | — | — | EP | disclosed |
| EP-2128706-A1 | RESIST PATTERN FORMATION METHOD, AND RESIN COMPOSITION CAPABLE OF INSOLUBILIZING RESIST PATTERN | JSR Corporation (JP) | 2009-12-02 | — | — | EP | disclosed |
| EP-1270553-B1 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR CORP (JP) | 2009-11-18 | — | — | EP | disclosed |
| US-20090280433-A1 | RADIATION-SENSITIVE COMPOSITION AND PROCESS FOR PRODUCING LOW-MOLECULAR COMPOUND FOR USE THEREIN | JSR CORPORATION (JP) | 2009-11-12 | — | — | US | disclosed |
| US-20090274977-A1 | COMPOUND AND RADIATION-SENSITIVE COMPOSITION | JSR CORPORATION (JP) | 2009-11-05 | — | — | US | disclosed |
| CN-100549051-C | Photoresist polymer composition | JSR CORP (JP) | 2009-10-14 | — | — | CN | disclosed |
| US-7592126-B2 | Positive resist composition and pattern forming method using the resist composition | FUJIFILM CORPORATION (JP) | 2009-09-22 | — | — | US | disclosed |
| EP-2100870-A1 | COMPOUND AND RADIATION-SENSITIVE COMPOSITION | JSR Corporation (JP) | 2009-09-16 | — | — | EP | disclosed |
| CN-101533224-A | Radiation-sensitive resin composition | JSR CORP (JP) | 2009-09-16 | — | — | CN | disclosed |
| CN-101528653-A | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL CO (JP) | 2009-09-09 | — | — | CN | disclosed |
| CN-101526737-A | Immersion lithography compositions and immersion lithography method | ROHM & HAAS ELECT MAT | 2009-09-09 | — | — | CN | disclosed |
| CN-100533271-C | Photoresist compositions | ROHM & HAAS ELECT MAT (US) | 2009-08-26 | — | — | CN | disclosed |
| CN-101516970-A | Silicone resin composition and method for forming trench isolation | JSR CORP (JP) | 2009-08-26 | — | — | CN | disclosed |
| US-20090202945-A1 | FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2009-08-13 | — | — | US | disclosed |
| EP-2088467-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2009-08-12 | — | — | EP | disclosed |
| EP-2080750-A1 | RADIATION-SENSITIVE COMPOSITION | Mitsubishi Gas Chemical Company, Inc. (JP) | 2009-07-22 | — | — | EP | disclosed |
| CN-100503666-C | Hyperbranched polymer, method for producing same, and resist composition containing same | LION CORP (JP) | 2009-06-24 | — | — | CN | disclosed |
| US-20090148790-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2009-06-11 | — | — | US | disclosed |
| EP-2065428-A1 | SILICONE RESIN COMPOSITION AND METHOD FOR FORMING TRENCH ISOLATION | JSR Corporation (JP) | 2009-06-03 | — | — | EP | disclosed |
| EP-2060949-A1 | RADIATION-SENSITIVE COMPOSITION AND PROCESS FOR PRODUCING LOW-MOLECULAR COMPOUND FOR USE THEREIN | JSR Corporation (JP) | 2009-05-20 | — | — | EP | disclosed |
| CN-100489027-C | Flame-retardant epoxy resin composition and phosphorus-containing compound | CHANGCHUN ARTIFICIAL RESIN FAC (CN) | 2009-05-20 | — | — | CN | disclosed |
| US-20090123869-A1 | Compositions and processes for immersion lithography | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2009-05-14 | — | — | US | disclosed |
| EP-2058318-A1 | PHOSPHATE ESTER COMPOUND, METAL SALT THEREOF, DENTAL MATERIAL, AND DENTAL COMPOSITION | Mitsui Chemicals, Inc. (JP) | 2009-05-13 | — | — | EP | disclosed |
| US-7531286-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2009-05-12 | — | — | US | disclosed |
| US-20090117489-A1 | Compositons and processes for immersion lithography | ROHM AND HAAS ELECTRONICS MATERIALS LLC (US) | 2009-05-07 | — | — | US | disclosed |
| EP-2056162-A1 | Compositions and processes for immersion lithography | Rohm and Haas Electronic Materials LLC (US) | 2009-05-06 | — | — | EP | disclosed |
| EP-2003148-A9 | FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2009-04-22 | — | — | EP | disclosed |
| US-7521169-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2009-04-21 | — | — | US | disclosed |
| CN-100476583-C | Ring sulfonium and sulfonium oxide and photoacid generator and photoetching glue containing ring sulfonium and sulfonium oxide | SHIPRAY CO (US) | 2009-04-08 | — | — | CN | disclosed |
| CN-100475912-C | Halogen-free resin composition | CHANG CHUN PLASTICS CO LTD (CN) | 2009-04-08 | — | — | CN | disclosed |
| US-7510817-B2 | Photoresist polymer compositions | JSR CORPORATION (JP) | 2009-03-31 | — | — | US | disclosed |
| CN-101395189-A | Fluorine-containing polymer, method for purifying same, and radiation-sensitive resin composition | JSR CORP (JP) | 2009-03-25 | — | — | CN | disclosed |
| EP-1840650-B1 | Positive type radiation-sensitive resin composition | JSR CORP (JP) | 2009-03-18 | — | — | EP | disclosed |
| US-20090069521-A1 | Novel Compound, Polymer, and Radiation-Sensitive Composition | JSR CORPORATION (JP) | 2009-03-12 | — | — | US | disclosed |
| WO-2009032890-A1 | MULTI-TONE RESIST COMPOSITIONS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT) (US) | 2009-03-12 | — | — | WO | disclosed |
| US-20090068589-A1 | MULTI-TONE RESIST COMPOSITIONS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2009-03-12 | — | — | US | disclosed |
| US-7498115-B2 | Photoresist compositions | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2009-03-03 | — | — | US | disclosed |
| US-7488566-B2 | Positive type radiation-sensitive resin composition | JSR CORPORATION (JP) | 2009-02-10 | — | — | US | disclosed |
| CN-100457749-C | Sulfonium salt compound, radiation-sensitive acid generator, and positive-type radiation-sensitive resin composition | JSR CORP (JP) | 2009-02-04 | — | — | CN | disclosed |
| CN-100457823-C | Epoxy resin composition, cured article obtained from the epoxy resin, and semiconductor device obtained thereof | MITSUI CHEMICALS INC (JP) | 2009-02-04 | — | — | CN | disclosed |
| US-7482107-B2 | Photoresist composition | SHIPLEY COMPANY, L.L.C. (US) | 2009-01-27 | — | — | US | disclosed |
| EP-1652866-B1 | ACRYLIC POLYMERS AND RADIATION-SENSITIVE RESIN COMPOSITIONS | JSR CORP (JP) | 2008-12-24 | — | — | EP | disclosed |
| EP-2003148-A2 | FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2008-12-17 | — | — | EP | disclosed |
| CN-101313246-A | Radiation-sensitive resin composition | JSR CORP (JP) | 2008-11-26 | — | — | CN | disclosed |
| EP-1640804-B1 | Positive-tone radiation-sensitive resin composition | JSR CORP (JP) | 2008-11-19 | — | — | EP | disclosed |
| US-7452655-B2 | Acrylic copolymer and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2008-11-18 | — | — | US | disclosed |
| CN-101256355-A | Composition for immersion lithography and immersion lithography method | ROHM & HAAS ELECT MAT (US) | 2008-09-03 | — | — | CN | disclosed |
| EP-1961739-A1 | NOVEL COMPOUND, POLYMER, AND RESIN COMPOSITION | JSR Corporation (JP) | 2008-08-27 | — | — | EP | disclosed |
| US-20080193872-A1 | Applying on photoresist, a photoactive component, and material(s) having a water contact angle changeable by base treatment; activation by immersion exposing to radiation; reduced leaching; pentafluoroacrylate-ethyl cyclopentyl methacrylate-trimethylolpropane triacrylate terpolymer | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2008-08-14 | — | — | US | disclosed |
| US-20080187859-A1 | Radiation-Sensitive Resin Composition | JSR CORPORATION (JP) | 2008-08-07 | — | — | US | disclosed |
| EP-1953593-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2008-08-06 | — | — | EP | disclosed |
| EP-1953595-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2008-08-06 | — | — | EP | disclosed |
| EP-1950610-A1 | COMPOSITION FOR FORMING UPPER FILM AND METHOD FOR FORMING PHOTORESIST PATTERN | JSR Corporation (JP) | 2008-07-30 | — | — | EP | disclosed |
| CN-101215421-A | Radiation-sensitive resin composition | JSR CORP (JP) | 2008-07-09 | — | — | CN | disclosed |
| US-20080160449-A1 | Photoresist polymer having nano-smoothness and etching resistance, and resist composition | LION CORPORATION (JP) | 2008-07-03 | — | — | US | disclosed |
| US-20080153031-A1 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2008-06-26 | — | — | US | disclosed |
| CN-101182372-A | Weather-resistant polycarbonate containing N,N'-oxalyl diphenylamine structure unit, manufacturing method therefore and products made thereby | GEN ELECTRIC (US) | 2008-05-21 | — | — | CN | disclosed |
| US-7371503-B2 | Sulfonium salt compound, photoacid generator, and positive-tone radiation-sensitive resin composition | JSR CORPORATION (JP) | 2008-05-13 | — | — | US | disclosed |
| US-7371505-B2 | Photosensitive composition and method for forming pattern using the same | FUJIFILM CORPORATION (JP) | 2008-05-13 | — | — | US | disclosed |
| EP-1918778-A2 | Compositions and processes for immersion lithography | Rohm and Haas Electronic Materials LLC (US) | 2008-05-07 | — | — | EP | disclosed |
| EP-1897869-A1 | NOVEL COMPOUND, POLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2008-03-12 | — | — | EP | disclosed |
| CN-100374506-C | Radiation-sensitive resin composition | JSR CORP (JP) | 2008-03-12 | — | — | CN | disclosed |
| CN-100374475-C | Acrylic polymer and radiation-sensitive resin composition | JSR CORP (JP) | 2008-03-12 | — | — | CN | disclosed |
| US-7335457-B2 | Positive-tone radiation-sensitive resin composition | JSR CORPORATION (JP) | 2008-02-26 | — | — | US | disclosed |
| US-20080044667-A1 | Modified Phenolic Resin, Epoxy Resin Composition Containing the Same, and Prepreg Containing the Composition | MITSUI CHEMICALS, INC. (JP) | 2008-02-21 | — | — | US | disclosed |
| CN-100366659-C | Weather-resistant polycarbonate containing oxanilide structural unit, manufacturing method thereof and product prepared from same | GEN ELECTRIC (US) | 2008-02-06 | — | — | CN | disclosed |
| US-7326518-B2 | Photoresist compositions | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2008-02-05 | — | — | US | disclosed |
| US-7326516-B2 | Resist composition for immersion exposure and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2008-02-05 | — | — | US | disclosed |
| US-20080026314-A1 | Silane Compound, Polysiloxane, and Radiation-Sensitive Resin Composition | JSR CORPORATION (JP) | 2008-01-31 | — | — | US | disclosed |
| US-7323284-B2 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2008-01-29 | — | — | US | disclosed |
| US-7314701-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2008-01-01 | — | — | US | disclosed |
| CN-101084250-A | Modified phenol resin, epoxy resin composition containing the same, and prepreg using the composition | MITSUI CHEMICALS INC (JP) | 2007-12-05 | — | — | CN | disclosed |
| US-20070269754-A1 | Acrylic Polymer and Radiation-Sensitive Resin Composition | JSR CORPORATION (JP) | 2007-11-22 | — | — | US | disclosed |
| US-20070269735-A1 | Radiation-Sensitive Resin Composition | JSR CORPORATION (JP) | 2007-11-22 | — | — | US | disclosed |
| US-7297461-B2 | Radiation sensitive resin composition | JSR CORPORATION (JP) | 2007-11-20 | — | — | US | disclosed |
| US-20070254247-A1 | Radiation-sensitive resin composition | YAMAMOTO MASAFUMI | 2007-11-01 | — | — | US | disclosed |
| US-7288359-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2007-10-30 | — | — | US | disclosed |
| US-20070248911-A1 | Pattern forming method and bilayer film | IWASAWA HARUO | 2007-10-25 | — | — | US | disclosed |
| EP-1840650-A1 | Positive type radiation-sensitive resin composition | JSR Corporation (JP) | 2007-10-03 | — | — | EP | disclosed |
| US-7273690-B2 | Positive resist composition for immersion exposure and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2007-09-25 | — | — | US | disclosed |
| CN-100336836-C | Acrylic copolymer and radiation-sensitive resin composition | JSR CORP (JP) | 2007-09-12 | — | — | CN | disclosed |
| EP-1641848-B1 | PHOTORESIST POLYMER COMPOSITIONS | JSR CORP (JP) | 2007-08-22 | — | — | EP | disclosed |
| CN-1333014-C | Halogen-free resin composition | CHANGCHU ARTIFICIAL RESIN FACT (CN) | 2007-08-22 | — | — | CN | disclosed |
| US-7258962-B2 | Positive-tone radiation-sensitive resin composition | JSR CORPORATION (JP) | 2007-08-21 | — | — | US | disclosed |
| CN-101008782-A | Coating composition for photoresist | ROHM & HAAS ELECT MAT (US) | 2007-08-01 | — | — | CN | disclosed |
| US-7244549-B2 | Pattern forming method and bilayer film | JSR CORPORATION (JP) | 2007-07-17 | — | — | US | disclosed |
| US-20070160930-A1 | Coating compositions for photoresists | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2007-07-12 | — | — | US | disclosed |
| EP-1806621-A1 | Coating compositions for photoresists | Rohm and Haas Electronic Materials LLC (US) | 2007-07-11 | — | — | EP | disclosed |
| US-20070148585-A1 | Hyperbranched polymer, production method therefor and resist composition containing hyperbranched polymer | LION CORPORATION. | 2007-06-28 | — | — | US | disclosed |
| US-7217492-B2 | Onium salt compound and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2007-05-15 | — | — | US | disclosed |
| CN-1310089-C | Photoetching adhesive composition | SHIPLEY CO LLC (US) | 2007-04-11 | — | — | CN | disclosed |
| US-7202016-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2007-04-10 | — | — | US | disclosed |
| CN-1942825-A | Resist composition | MITSUBISHI GAS CHEMICAL CO (JP) | 2007-04-04 | — | — | CN | disclosed |
| US-20070072112-A1 | Coating compositions | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2007-03-29 | — | — | US | disclosed |
| EP-1764647-A2 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM Corporation (JP) | 2007-03-21 | — | — | EP | disclosed |
| US-20070054214-A1 | Acid generators, sulfonic acids, sulfonyl halides, and radiation sensitive resin compositions | JSR CORPORATION (JP) | 2007-03-08 | — | — | US | disclosed |
| EP-1757980-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 2007-02-28 | — | — | EP | disclosed |
| US-20070042292-A1 | Radiation sensitive resin composition | JSR CORPORATION (JP) | 2007-02-22 | — | — | US | disclosed |
| US-20070042290-A1 | resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits | FUJI PHOTO FILM CO., LTD. | 2007-02-22 | — | — | US | disclosed |
| CN-1916760-A | Acid generator, sulfonic acid derivative and radiation-sensitive resin composition | JSR CORP (JP) | 2007-02-21 | — | — | CN | disclosed |
| CN-1898281-A | Hyperbranched polymer, method for producing same, and resist composition containing same | LION CORP (JP) | 2007-01-17 | — | — | CN | disclosed |
| EP-1739485-A1 | RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2007-01-03 | — | — | EP | disclosed |
| EP-1736829-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2006-12-27 | — | — | EP | disclosed |
| CN-1886410-A | Silane compound, polysiloxane and radiation-sensitive resin composition | JSR CORP (JP) | 2006-12-27 | — | — | CN | disclosed |
| US-7153630-B2 | Resist with reduced line edge roughness | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2006-12-26 | — | — | US | disclosed |
| CN-1881085-A | Compositions and methods for immersion lithography | ROHM & HAAS ELECT MAT (US) | 2006-12-20 | — | — | CN | disclosed |
| CN-1877450-A | Coating compositions | ROHM & HAAS ELECT MAT (US) | 2006-12-13 | — | — | CN | disclosed |
| CN-1288499-C | Radiation-sensitive resin composition | JSR CORP (JP) | 2006-12-06 | — | — | CN | disclosed |
| US-7144675-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-12-05 | — | — | US | disclosed |
| EP-1726608-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2006-11-29 | — | — | EP | disclosed |
| CN-1285636-C | Process for producing oxyalkylene derivative | MITSUI CHEMICALS INC (JP) | 2006-11-22 | — | — | CN | disclosed |
| US-20060257781-A1 | Photoacid generator, and a polymer with units of 2-alkyladamantyl (meth)acrylate, 3-hydroxyadamantyl (meth)acrylate, 1-alkylcyclopentyl (meth)acrylate or 7-oxo-3,8-methano-6-oxabicyclo(3.2.1)octan-4-yl (meth)acrylate, made with a chain transfer agent; e.g. RAFT polymer; narrow polydispersity | FREESLATE, INC. | 2006-11-16 | — | — | US | disclosed |
| EP-1720075-A1 | Coating compositions | Rohm and Haas Electronic Materials, L.L.C. (US) | 2006-11-08 | — | — | EP | disclosed |
| EP-1720064-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2006-11-08 | — | — | EP | disclosed |
| EP-1720072-A1 | Compositons and processes for immersion lithography | Rohm and Haas Electronic Materials, L.L.C. (US) | 2006-11-08 | — | — | EP | disclosed |
| US-20060246373-A1 | Applying on photoresist, a photoactive component, and material(s) having a water contact angle changeable by base treatment; activation by immersion exposing to radiation; reduced leaching; pentafluoroacrylate-ethyl cyclopentyl methacrylate-trimethylolpropane triacrylate terpolymer | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2006-11-02 | — | — | US | disclosed |
| US-20060234153-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-10-19 | — | — | US | disclosed |
| US-20060234154-A1 | Mixture containing acid generator and free radical catalyst; acrylated ester monomer | JSR CORPORATION (JP) | 2006-10-19 | — | — | US | disclosed |
| US-20060228647-A1 | Photoresist composition | SHIPLEY COMPANY, L.L.C. (US) | 2006-10-12 | — | — | US | disclosed |
| CN-1845941-A | Photoresist polymer compositions | JSR CORP (JP) | 2006-10-11 | — | — | CN | disclosed |
| US-20060223001-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-10-05 | — | — | US | disclosed |
| US-20060223010-A1 | Positive type radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-10-05 | — | — | US | disclosed |
| CN-1842551-A | Acrylic polymers and radiation-sensitive resin compositions | JSR CORP (JP) | 2006-10-04 | — | — | CN | disclosed |
| CN-1837957-A | Photoresist composition | ROHM & HAAS ELECT MAT (US) | 2006-09-27 | — | — | CN | disclosed |
| US-20060210922-A1 | Positive resist composition and pattern forming method using the resist composition | FUJI PHOTO FILM CO., LTD. | 2006-09-21 | — | — | US | disclosed |
| EP-1703322-A2 | Positive resist composition and pattern forming method using the resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2006-09-20 | — | — | EP | disclosed |
| CN-1276303-C | Acid generator and radiation-sensitive resin composition | JSR CORP (JP) | 2006-09-20 | — | — | CN | disclosed |
| US-7108955-B2 | Polysiloxane, process for production thereof and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-09-19 | — | — | US | disclosed |
| US-7105269-B2 | Copolymer, polymer mixture, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-09-12 | — | — | US | disclosed |
| US-20060199100-A1 | Positive resist composition and pattern-forming method using the same | FUJI PHOTO FILM CO., LTD. | 2006-09-07 | — | — | US | disclosed |
| EP-1698645-A1 | HYPERBRANCHED POLYMER, PROCESS FOR PRODUCING THE SAME AND RESIST COMPOSITION CONTAINING THE HYPERBRANCHED POLYMER | Lion Corporation (JP) | 2006-09-06 | — | — | EP | disclosed |
| EP-1011029-B1 | Radiation-sensitive resin composition | JSR CORP (JP) | 2006-08-30 | — | — | EP | disclosed |
| US-20060188812-A1 | Phenolic hydroxyl group-containing copolymer and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-08-24 | — | — | US | disclosed |
| CN-1821869-A | Photoresist compositions | ROHM & HAAS ELECT MAT (US) | 2006-08-23 | — | — | CN | disclosed |
| US-20060172224-A1 | Photoresist compositions | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2006-08-03 | — | — | US | disclosed |
| US-20060172223-A1 | Photoresist compositions | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2006-08-03 | — | — | US | disclosed |
| US-20060172225-A1 | Photoresist compositions | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2006-08-03 | — | — | US | disclosed |
| EP-1686424-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2006-08-02 | — | — | EP | disclosed |
| CN-1811595-A | Photoresist compositions | ROHM & HAAS ELECT MAT (US) | 2006-08-02 | — | — | CN | disclosed |
| US-7084194-B2 | Halogen-free resin composition | CHANG CHUN PLASTICS CO., LTD. (TW) | 2006-08-01 | — | — | US | disclosed |
| US-20060166138-A1 | Radiation-sensitive resin composition | JSR CORPORATION | 2006-07-27 | — | — | US | disclosed |
| EP-1140827-B1 | SYNTHESIS OF PHENOLIC MONOMERS CONTAINING IMIDE OR DIIMIDE MOIETIES AND HIGH HEAT CARBONATE POLYMERS PREPARED THEREFROM | GEN ELECTRIC (US) | 2006-07-26 | — | — | EP | disclosed |
| US-7078148-B2 | Photoresist with improved sensitivity and resolution to deep ultraviolet rays/excimer lasers; semiconductors; integrated circuits | JSR CORPORATION (JP) | 2006-07-18 | — | — | US | disclosed |
| EP-1679314-A1 | SILANE COMPOUND, POLYSILOXANE AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2006-07-12 | — | — | EP | disclosed |
| US-20060141383-A1 | Sulfonium salts, radiation- sensitive acid generators, and positive radiator-sensitive resin compositions | JSR CORPORATION (JP) | 2006-06-29 | — | — | US | disclosed |
| US-7060414-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-06-13 | — | — | US | disclosed |
| EP-1666968-A1 | Photoresist compositions | Rohm and Haas Electronic Materials, L.L.C. (US) | 2006-06-07 | — | — | EP | disclosed |
| CN-1781985-A | Epoxy resin composition, cured article obtained from the epoxy resin, and semiconductor device obtained thereof | MITSUI CHEMICALS INC (JP) | 2006-06-07 | — | — | CN | disclosed |
| EP-1662321-A1 | Photoresist compositions | Rohm and Haas Electronic Materials, L.L.C. (US) | 2006-05-31 | — | — | EP | disclosed |
| EP-1662320-A1 | Photoresist compositions | Rohm and Haas Electronic Materials, L.L.C. (US) | 2006-05-31 | — | — | EP | disclosed |
| CN-1780813-A | Acid generator, sulfonic acid, sulfonyl halide, and radiation-sensitive resin composition | JSR CORP (JP) | 2006-05-31 | — | — | CN | disclosed |
| US-20060105272-A1 | Compositions and processes for immersion lithography | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2006-05-18 | — | — | US | disclosed |
| EP-1652866-A1 | ACRYLIC POLYMERS AND RADIATION-SENSITIVE RESIN COMPOSITIONS | JSR Corporation (JP) | 2006-05-03 | — | — | EP | disclosed |
| US-20060078820-A1 | Resist with reduced line edge roughness | MASS INSTITUTE OF TECHNOLOGY (MIT) (US) | 2006-04-13 | — | — | US | disclosed |
| US-20060078823-A1 | Positive resist composition and pattern-forming method using the same | FUJI PHOTO FILM CO., LTD. | 2006-04-13 | — | — | US | disclosed |
| US-20060078821-A1 | A caroboxyalkylanthracene based compound, a hydroxy or alkoxystyrene polymer, and a sulfonimide compound as photoacid generator; low sublimation properties and excellent compatibility with other components; exhibits optimum controllability of radiation transmittance; microfabrication | JSR CORPORATION (JP) | 2006-04-13 | — | — | US | disclosed |
| EP-1645908-A1 | Positive resist composition and pattern-forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2006-04-12 | — | — | EP | disclosed |
| US-7026093-B2 | Photoresist compositions | SHIPLEY COMPANY, L.L.C. (US) | 2006-04-11 | — | — | US | disclosed |
| US-20060074139-A1 | Acrylic copolymer and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-04-06 | — | — | US | disclosed |
| EP-1641848-A1 | PHOTORESIST POLYMER COMPOSITIONS | JSR Corporation (JP) | 2006-04-05 | — | — | EP | disclosed |
| EP-1641849-A1 | PHOTORESIST POLYMERS AND COMPOSITIONS HAVING ACRYLIC- OR METHACRYLIC-BASED POLYMERIC RESIN PREPARED BY A LIVING FREE RADICAL PROCESS | Symyx Technologies, Inc. (US) | 2006-04-05 | — | — | EP | disclosed |
| CN-1249790-C | Ray sensitive compasition for preparing insulation film and display | JSR CORP (JP) | 2006-04-05 | — | — | CN | disclosed |
| CN-1249126-C | Polysiloxane, process for production thereof and radiation-sensitive resin composition | JSR CORP (JP) | 2006-04-05 | — | — | CN | disclosed |
| EP-1640804-A2 | Positive-tone radiation-sensitive resin composition | JSR Corporation (JP) | 2006-03-29 | — | — | EP | disclosed |
| US-7005231-B2 | Positive type radiosensitive composition and method for forming pattern | JSR CORPORATION (JP) | 2006-02-28 | — | — | US | disclosed |
| US-7005230-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-02-28 | — | — | US | disclosed |
| CN-1737685-A | Composition and process for immersion lithography | ROHM & HAAS ELECT MAT (US) | 2006-02-22 | — | — | CN | disclosed |
| CN-1738813-A | Sulfonium salt compound, radiation-sensitive acid generator, and positive-type radiation-sensitive resin composition | JSR CORP (JP) | 2006-02-22 | — | — | CN | disclosed |
| US-RE38980-E1 | Photoresist compositions | SHIPLEY COMPANY, L.L.C. (US) | 2006-02-14 | — | — | US | disclosed |
| CN-1732408-A | Radiation-sensitive resin composition | JSR CORP (JP) | 2006-02-08 | — | — | CN | disclosed |
| CN-1238766-C | Positive type radiation-sensitive composition and method for forming pattern | JSR CORP (JP) | 2006-01-25 | — | — | CN | disclosed |
| EP-1085379-B1 | Radiation-sensitive resin composition | JSR CORP (JP) | 2006-01-04 | — | — | EP | disclosed |
| EP-1612604-A2 | Compositions and processes for immersion lithography | Rohm and Haas Electronic Materials, L.L.C. (US) | 2006-01-04 | — | — | EP | disclosed |
| US-20050287473-A1 | Photosensitive composition and method for forming pattern using the same | FUJI PHOTO FILM CO., LTD. | 2005-12-29 | — | — | US | disclosed |
| CN-1714110-A | Acrylic copolymer and radiation-sensitive resin composition | JSR CORP (JP) | 2005-12-28 | — | — | CN | disclosed |
| CN-1708728-A | Radiation-sensitive resin composition | JSR CORP (JP) | 2005-12-14 | — | — | CN | disclosed |
| EP-1602975-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-12-07 | — | — | EP | disclosed |
| EP-1600437-A1 | ACID GENERATORS, SULFONIC ACIDS, SULFONYL HALIDES, AND RADIATION-SENSITIVE RESIN COMPOSITIONS | JSR Corporation (JP) | 2005-11-30 | — | — | EP | disclosed |
| US-6964840-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2005-11-15 | — | — | US | disclosed |
| US-20050244747-A1 | Positive-tone radiation-sensitive resin composition | JSR CORPORATION (JP) | 2005-11-03 | — | — | US | disclosed |
| EP-1586594-A1 | ACRYLIC COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-10-19 | — | — | EP | disclosed |
| EP-1586570-A1 | SULFONIUM SALTS, RADIATION-SENSITIVE ACID GENERATORS, AND POSITIVE RADIATION-SENSITIVE RESIN COMPOSITIONS | JSR Corporation (JP) | 2005-10-19 | — | — | EP | disclosed |
| CN-1223622-C | Curing agent composition for epoxy resin, epoxy resin composition and use thereof | MITSUI CHEMICALS INC (JP) | 2005-10-19 | — | — | CN | disclosed |
| US-20050214680-A1 | Radiation-sensitive resin composition | MIYAJI MASAAKI | 2005-09-29 | — | — | US | disclosed |
| EP-1580598-A2 | Positive resist composition for immersion exposure and pattern-forming method using the same | Fuji Photo Film Co. Ltd. (JP) | 2005-09-28 | — | — | EP | disclosed |
| US-20050208419-A1 | Fluoropolymer containing unsaturated monomer with a adamantyl, decalin, norbornyl, cedrol , cyclohexyl, cycloheptyl, cyclooctyl , a cyclodecanyl, cyclododecanyl and/or tricyclodecanyl group; sulfonium type compound generates acid upon exposure to actinic radiation; semiconductor, integrated circuits | FUJI PHOTO FILM CO., LTD. | 2005-09-22 | — | — | US | disclosed |
| CN-1668670-A | Weather-resistant polycarbonate containing oxanilide structural unit, manufacturing method thereof and product prepared from same | GEN ELECTRIC (US) | 2005-09-14 | — | — | CN | disclosed |
| EP-1035436-B1 | Resist pattern formation method | JSR CORP (JP) | 2005-09-07 | — | — | EP | disclosed |
| US-6936398-B2 | Resist with reduced line edge roughness | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2005-08-30 | — | — | US | disclosed |
| US-20050186505-A1 | Positive resist composition for immersion exposure and method of pattern formation with the same | FUJI PHOTO FILM CO., LTD. | 2005-08-25 | — | — | US | disclosed |
| US-20050186503-A1 | Resist composition for immersion exposure and pattern formation method using the same | FUJI PHOTO FILM CO., LTD. | 2005-08-25 | — | — | US | disclosed |
| EP-1566693-A2 | Resist composition for immersion exposure and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2005-08-24 | — | — | EP | disclosed |
| US-6933094-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2005-08-23 | — | — | US | disclosed |
| US-20050171226-A1 | Radiation sensitive resin composition | JSR CORPORATION (JP) | 2005-08-04 | — | — | US | disclosed |
| EP-1557718-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-07-27 | — | — | EP | disclosed |
| US-20050158657-A1 | Radiation-sensitive resin composition | SUZUKI AKI (JP) | 2005-07-21 | — | — | US | disclosed |
| US-6911503-B2 | A curing formualtion for an epoxy resin, containing a curing agent, selected from the group: a phenol compound having two or more hydroxy groups and a phenolic compound with 2 or more acylated hydroxy groups; phosphazenium cure promoter | MITSUI CHEMICALS, INC. (JP) | 2005-06-28 | — | — | US | disclosed |
| US-6908722-B2 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2005-06-21 | — | — | US | disclosed |
| US-6900269-B2 | Halogen-free resin composition | CHANG CHUN PLASTICS CO., LTD. (TW) | 2005-05-31 | — | — | US | disclosed |
| US-6899989-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2005-05-31 | — | — | US | disclosed |
| US-20050095527-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2005-05-05 | — | — | US | disclosed |
| EP-0853080-B1 | Oxanilide U-V absorbers | GEN ELECTRIC (US) | 2005-05-04 | — | — | EP | disclosed |
| US-20050079443-A1 | Radiation-sensitive polymer composition and pattern forming method using the same | SHIN-ETSU CHEMICAL CO., LTD. | 2005-04-14 | — | — | US | disclosed |
| EP-1521794-A1 | WEATHERABLE POLYCARBONATES COMPRISING OXANILIDE STRUCTURAL UNITS, METHOD, AND ARTICLES MADE THEREFROM | GENERAL ELECTRIC COMPANY (US) | 2005-04-13 | — | — | EP | disclosed |
| CN-1196730-C | Preparation of Copolycarbonates by Solid State Polymerization | GEN ELECTRIC (US) | 2005-04-13 | — | — | CN | disclosed |
| US-20050053861-A1 | Onium salt compound and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2005-03-10 | — | — | US | disclosed |
| CN-1592764-A | Method for producing organic compound, epoxy resin composition, cured product of the epoxy resin, and semiconductor device formed using the epoxy resin | MITSUI CHEMICALS INC (JP) | 2005-03-09 | — | — | CN | disclosed |
| EP-1099691-B1 | N-Sulfonyloxyimide compound and radiation-sensitive resin composition using the same | JSR CORP (JP) | 2005-03-02 | — | — | EP | disclosed |
| CN-1580127-A | Halogen-free resin composition | CHANGCHU ARTIFICIAL RESIN FACT (CN) | 2005-02-16 | — | — | CN | disclosed |
| CN-1580128-A | Halogen-free resin composition | CHANGCHUN ARTIFICIAL RESIN FAC (CN) | 2005-02-16 | — | — | CN | disclosed |
| CN-1580120-A | Flame-retardant epoxy resin composition and phosphorus-containing compound | CHANGCHUN ARTIFICIAL RESIN FAC (CN) | 2005-02-16 | — | — | CN | disclosed |
| US-6849374-B2 | Photoacid generators and photoresists comprising same | SHIPLEY COMPANY, L.L.C. (US) | 2005-02-01 | — | — | US | disclosed |
| US-6846607-B2 | Carbazole derivative and chemically amplified radiation-sensitive resin composition | JSR CORPORATION (JP) | 2005-01-25 | — | — | US | disclosed |
| US-6846895-B2 | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2005-01-25 | — | — | US | disclosed |
| WO-2005003198-A1 | PHOTORESIST POLYMER COMPOSITIONS | JSR CORPORATION (JP) | 2005-01-13 | — | — | WO | disclosed |
| WO-2005000923-A1 | PHOTORESIST POLYMERS AND COMPOSITIONS HAVING ACRYLIC- OR METHACRYLIC-BASED POLYMERIC RESIN PREPARED BY A LIVING FREE RADICAL PROCESS | SYMYX TECHNOLOGIES, INC. (US) | 2005-01-06 | — | — | WO | disclosed |
| US-6838225-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2005-01-04 | — | — | US | disclosed |
| US-20040260039-A1 | Process for producing organic compound epoxy resin composition, cured article obtained from the epoxy resin, and semiconductor device obtained with epoxy resin | MITSUI CHEMICALS, INC. (JP) | 2004-12-23 | — | — | US | disclosed |
| US-6830868-B2 | Useful as a chemically amplified resist responding to active radiation, for example ultraviolet rays such as a KrF excimer laser, ArF excimer laser, and F2 excimer laser | JSR CORPORATION (JP) | 2004-12-14 | — | — | US | disclosed |
| US-20040241580-A1 | Radiation-sensitive resin composition | NISHIMURA YUKIO (JP) | 2004-12-02 | — | — | US | disclosed |
| US-6824954-B2 | DIHALOMETHYL SULFONYLOXIME COMPOUNDS; FOR EXAMPLE, 2,2-DIFLUORO-2-METHYLACETOPHENONE-O-METHYLSULFONYLOXIME; HEAT STABILITY AND STORAGE STABILITY; SENSITIVE TO FAR ULTRAVIOLET RADIATION OR ELECTRON BEAMS; RESISTS | JSR CORPORATION (JP) | 2004-11-30 | — | — | US | disclosed |
| US-6821705-B2 | USED AS CHEMICALLY AMPLIFIED RESIST, EXHIBITS HIGH SENSITIVITY, RESOLUTION, RADIATION TRANSMITTANCE, AND SURFACE SMOOTHNESS, AND IS FREE FROM THE PROBLEM OF PARTIAL INSOLUBLIZATION DURING OVEREXPOSURE | JSR CORPORATION (JP) | 2004-11-23 | — | — | US | disclosed |
| US-6811961-B2 | PHOTORESIST RELEIF IMAGES; MIXTURE OF RESIN AND ACID GENERATORS | SHIPLEY COMPANY, L.L.C. | 2004-11-02 | — | — | US | disclosed |
| EP-0901043-B1 | Radiation-sensitive resin composition | JSR CORP (JP) | 2004-10-27 | — | — | EP | disclosed |
| US-20040197698-A1 | Positive type radiosensitive composition and method for forming pattern | JSR CORPORATION (JP) | 2004-10-07 | — | — | US | disclosed |
| US-6800419-B2 | FOR USE AS CHEMICALLY-AMPLIFIED RESIST FOR MICROFABRICATION UTILIZING DEEP ULTRAVIOLET RAYS AND EXHIBITS EXCELLENT FILM THICKNESS UNIFORMITY AND STORAGE STABILITY | JSR CORPORATION (JP) | 2004-10-05 | — | — | US | disclosed |
| US-6800414-B2 | FLUOROPOLYMER | JSR CORPORATION (JP) | 2004-10-05 | — | — | US | disclosed |
| US-6797453-B2 | WHICH HAS RESOLUTION HIGH ENOUGH TO FORM THROUGH HOLE OR U-SHAPED DEPRESSION; COMPRISES SILANE COUPLING AGENT; FOR ELECTROLUMINESCENT LIQUID CRYSTAL DISPLAYS | JSR CORPORATION (JP) | 2004-09-28 | — | — | US | disclosed |
| US-6797450-B2 | ALKALI-SOLUBLE RESIN HAVING NO EPOXY GROUP AND A 1,2-QUINONEDIAZIDE COMPOUND | JSR CORPORATION (JP) | 2004-09-28 | — | — | US | disclosed |
| US-6783912-B2 | POSITIVE OR NEGATIVE AMPLIFICATION | SHIPLEY COMPANY, L.L.C. | 2004-08-31 | — | — | US | disclosed |
| US-20040158023-A1 | Halogen-free resin composition | CHANG CHUN PLASTICS CO., LTD. (TW) | 2004-08-12 | — | — | US | disclosed |
| US-6770780-B1 | QUATERNIZATION OF T-BUTYL BROMOACETATE WITH TRI(N-BUTYL)PHOSPHINE TO FORM PHOSPHONIUM SALT; REACTING WITH BASE TO FORM PHOSPHORUS YLIDE; FORMING 2,4,6-TRIS(3', 5'-DI-T-BUTYL-4'-HYDROXYBENZYL)METHYL-STYRENE; HYDROLYSIS | JSR CORPORATION (JP) | 2004-08-03 | — | — | US | disclosed |
| US-20040147640-A1 | Halogen-free resin composition | CHANG CHUN PLASTICS CO., LTD. (TW) | 2004-07-29 | — | — | US | disclosed |
| US-20040146802-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2004-07-29 | — | — | US | disclosed |
| EP-1440991-A1 | CURING AGENT COMPOSITION FOR EPOXY RESINS, EPOXY RESIN COMPOSITION AND USE THEREOF | Mitsui Chemicals, Inc. (JP) | 2004-07-28 | — | — | EP | disclosed |
| US-20040143082-A1 | Polysiloxane, process for production thereof and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2004-07-22 | — | — | US | disclosed |
| CN-1156532-C | Epoxy-resin composition and use thereof | 三井化学株式会社 | 2004-07-07 | — | — | CN | disclosed |
| CN-1155654-C | Epoxy-resin composition and use thereof | 三井化学株式会社 | 2004-06-30 | — | — | CN | disclosed |
| CN-1507580-A | Positive type radiation-sensitive composition and method for forming pattern | JSR株式会社 | 2004-06-23 | — | — | CN | disclosed |
| US-6753124-B2 | AMPLIFIED POSITIVE PHOTORESISTS | JSR CORPORATION (JP) | 2004-06-22 | — | — | US | disclosed |
| CN-1505651-A | Polysiloxane, process for production thereof and radiation-sensitive resin composition | JSR��ʽ���� | 2004-06-16 | — | — | CN | disclosed |
| CN-1501166-A | Radiation-sensitive resin composition | JSR株式会社 | 2004-06-02 | — | — | CN | disclosed |
| US-6743563-B2 | COMPRISING A RESIN, A PHOTOACID GENERATOR COMPOUND, AND AN ACID; IMPROVED STORAGE STABILITY; PREFERABLY CONTAINS AN ESTER SOLVENT SUCH AS ETHYL LACTATE OR PROPYLENE GLYCOL MONOMETHYL ETHER ACETATE | SHIPLEY COMPANY, L.L.C. | 2004-06-01 | — | — | US | disclosed |
| WO-2002069039-A9 | PHOTOACID GENERATOR SYSTEMS FOR SHORT WAVELENGTH IMAGING | SHIPLEY CO LLC (US) | 2004-05-06 | — | — | WO | disclosed |
| US-20040077821-A1 | Flame retarding resin composition | CHANG CHUN PLASTICS CO., LTD. (TW) | 2004-04-22 | — | — | US | disclosed |
| EP-1411390-A1 | POSITIVE TYPE RADIOSENSITIVE COMPOSITION AND METHOD FOR FORMING PATTERN | JSR Corporation (JP) | 2004-04-21 | — | — | EP | disclosed |
| US-20040072094-A1 | Radiation sensitive resin composition | JSR CORPORATION (JP) | 2004-04-15 | — | — | US | disclosed |
| CN-1489608-A | Curing agent composition for epoxy resin, epoxy resin composition and use thereof | ������ѧ��ʽ���� | 2004-04-14 | — | — | CN | disclosed |
| EP-0959389-B1 | Diazodisulfone compound and radiation-sensitive resin composition | JSR CORP (JP) | 2004-03-31 | — | — | EP | disclosed |
| EP-1398339-A1 | POLYSILOXANE, PROCESS FOR PRODUCTION THEREOF AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2004-03-17 | — | — | EP | disclosed |
| US-20040048192-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2004-03-11 | — | — | US | disclosed |
| US-20040044167-A1 | Sealing semiconductor; integrated circuits; phenol compound as curing agents and phosphazenium compound | MITSUI CHEMICALS, INC. (JP) | 2004-03-04 | — | — | US | disclosed |
| EP-1142928-B1 | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds | JSR CORP (JP) | 2004-02-18 | — | — | EP | disclosed |
| WO-2004005372-A1 | WEATHERABLE POLYCARBONATES COMPRISING OXANILIDE STRUCTURAL UNITS, METHOD, AND ARTICLES MADE THEREFROM | GENERAL ELECTRIC COMPANY (US) | 2004-01-15 | — | — | WO | disclosed |
| US-6664022-B1 | Forming relief image on substrate by coating with amplified positive resin and iodinium or sulfonium compound comprising naphthyl, thienyl or pentafluorophenyl substituents; exposure to patterned activating radiation; development | SHIPLEY COMPANY, L.L.C. | 2003-12-16 | — | — | US | disclosed |
| US-20030219680-A1 | Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams | JSR CORPORATION (JP) | 2003-11-27 | — | — | US | disclosed |
| US-20030215737-A1 | Radiation sensitive composition for forming an insulating film, insulating film and display device | JSR CORPORATION (JP) | 2003-11-20 | — | — | US | disclosed |
| US-20030215748-A1 | Mixtures of alkaline soluble terpolymers and acid generators used to form films for transfering images to substrates | SHIPLEY COMPANY, L.L.C. (US) | 2003-11-20 | — | — | US | disclosed |
| US-6645698-B1 | Photoresist compositions comprising a resin binder having acid labile blocking groups requiring an activation energy in excess of 20 Kcal/mol. for deblocking, a photoacid generator capable of generating a halogenated sulfonic acid upon | SHIPLEY COMPANY, L.L.C. | 2003-11-11 | — | — | US | disclosed |
| US-20030203307-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-10-30 | — | — | US | disclosed |
| US-20030203309-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-10-30 | — | — | US | disclosed |
| US-20030194634-A1 | Novel anthracene derivative and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-10-16 | — | — | US | disclosed |
| US-20030191268-A1 | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin composition | IWASAWA HARUO (JP) | 2003-10-09 | — | — | US | disclosed |
| US-6623907-B2 | Chemical amplified photoresist | JSR CORPORATION (JP) | 2003-09-23 | — | — | US | disclosed |
| US-20030170561-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-09-11 | — | — | US | disclosed |
| EP-1343048-A2 | Anthracene derivative and radiation-sensitive resin composition | JSR Corporation (JP) | 2003-09-10 | — | — | EP | disclosed |
| CN-1438543-A | Ring sulfonium and sulfonium oxide and photoacid generator and photoetching glue | SHIPRAY CO (US) | 2003-08-27 | — | — | CN | disclosed |
| US-20030157423-A1 | Copolymer, polymer mixture, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-08-21 | — | — | US | disclosed |
| EP-1331518-A2 | Radiation sensitive composition for forming an insulating film, insulating film and display device | JSR Corporation (JP) | 2003-07-30 | — | — | EP | disclosed |
| CN-1432873-A | Acid generator, sulfonic acid derivative and radiation-sensitive resin composition | JSR CORP (JP) | 2003-07-30 | — | — | CN | disclosed |
| US-20030134227-A1 | Cyclic sulfonium and sulfoxonium photoacid generators and photoresists comprising same | SHIPLEY COMPANY, LLC | 2003-07-17 | — | — | US | disclosed |
| US-20030113660-A1 | Sulfonyloxime compound, and radiation sensitive acid generator, positive type radiation sensitive resin composition and negative type radiation sensitive resin composition using same | JSR CORPORATION (JP) | 2003-06-19 | — | — | US | disclosed |
| US-20030113658-A1 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-06-19 | — | — | US | disclosed |
| EP-1312982-A1 | RADIATION-SENSITIVE COMPOSITION, INSULATING FILM AND ORGANIC EL DISPLAY ELEMENT | JSR Corporation (JP) | 2003-05-21 | — | — | EP | disclosed |
| US-20030073040-A1 | Pattern forming method and bilayer film | JSR CORPORATION (JP) | 2003-04-17 | — | — | US | disclosed |
| EP-0898201-B1 | Radiation sensitive resin composition | JSR CORP (JP) | 2003-04-09 | — | — | EP | disclosed |
| CN-1407406-A | Photoetching adhesive composition | HIPREY CORP (US) | 2003-04-02 | — | — | CN | disclosed |
| US-20030054284-A1 | Radiation-sensitive composition, insulating film and organic el display element | JSR CORPORATION (JP) | 2003-03-20 | — | — | US | disclosed |
| US-6531260-B2 | Photoresist | JSR CORPORATION (JP) | 2003-03-11 | — | — | US | disclosed |
| US-20030044716-A1 | Photoresist compositions | SHIPLEY COMPANY, L.L.C. | 2003-03-06 | — | — | US | disclosed |
| US-20030036015-A1 | Resist with reduced line edge roughness | AIR FORCE, UNITED STATES | 2003-02-20 | — | — | US | disclosed |
| EP-1284443-A1 | Photoresist compositions | Shipley Co. L.L.C. (US) | 2003-02-19 | — | — | EP | disclosed |
| US-6517992-B1 | N-sulfonyloxyimide compound and radiation-sensitive resin composition using the same | JSR CORPORATION (JP) | 2003-02-11 | — | — | US | disclosed |
| US-20030027061-A1 | Photoacid generators and photoresists comprising same | SHIPLEY COMPANY, L.L.C. | 2003-02-06 | — | — | US | disclosed |
| US-20030022095-A1 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2003-01-30 | — | — | US | disclosed |
| US-20030013049-A1 | Photoacid generator systems for short wavelength imaging | SHIPLEY COMPANY, L.L.C. | 2003-01-16 | — | — | US | disclosed |
| CN-1391591-A | Copolycarbonate preparation by solid state polymerization | GEN ELECTRIC (US) | 2003-01-15 | — | — | CN | disclosed |
| US-6506537-B2 | Photopolymerization | JSR CORPORATION (JP) | 2003-01-14 | — | — | US | disclosed |
| EP-1270553-A2 | Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition | JSR Corporation (JP) | 2003-01-02 | — | — | EP | disclosed |
| US-20020192593-A1 | Used as chemically amplified resist, exhibits high sensitivity, resolution, radiation transmittance, and surface smoothness, and is free from the problem of partial insolublization during overexposure | JSR CORPORATION (JP) | 2002-12-19 | — | — | US | disclosed |
| US-20020172885-A1 | Novel carbazole derivative and chemically amplified radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-11-21 | — | — | US | disclosed |
| US-6482568-B1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-11-19 | — | — | US | disclosed |
| US-6482567-B1 | Oxime sulfonate and N-oxyimidosulfonate photoacid generators and photoresists comprising same | SHIPLEY COMPANY, L.L.C. | 2002-11-19 | — | — | US | disclosed |
| WO-2002091084-A2 | RESIST WITH REDUCED LINE EDGE ROUGHNESS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2002-11-14 | — | — | WO | disclosed |
| US-20020161164-A1 | WEATHERABLE POLYCARBONATES COMPRISING OXANILIDE STRUCTURAL UNITS, METHOD, AND ARTICLES MADE THEREFROM | GENERAL ELECTRIC COMPANY | 2002-10-31 | — | — | US | disclosed |
| EP-1253470-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2002-10-30 | — | — | EP | disclosed |
| US-6465150-B1 | COMPRISING AN AROMATIC SULFONIC ACID ONIUM SALT COMPOUND ACID GENERATOR, FOR EXAMPLE, 2,4-DIFLUOROBENZENESULFONIC ACID ANION AND AN ONIUM CATION OF SULFUR OR IODONIUM, AND A COPOLYMER REPRESENTED BY 4-HYDROXYSTYRENE/4-T-BUTOXYSTYRENE COPOLYMER | JSR CORPORATION (JP) | 2002-10-15 | — | — | US | disclosed |
| US-6462168-B1 | POLYCARBONATE COMPOSITIONS OF ULTRAVIOLET ABSORBING COMPOUNDS TO PREVENT PHOTOYELLOWING | GENERAL ELECTRIC COMPANY | 2002-10-08 | — | — | US | disclosed |
| US-6458506-B2 | GENERATING ANTHRACENE ACID UPON EXPOSURE TO ACTIVATING RADIATION | SHIPLEY COMPANY, LLC | 2002-10-01 | — | — | US | disclosed |
| US-20020132181-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-09-19 | — | — | US | disclosed |
| EP-1238972-A1 | Novel carbazole derivative and chemically amplified radiation-sensitive resin composition | JSR Corporation (JP) | 2002-09-11 | — | — | EP | disclosed |
| EP-1231205-A1 | VINYLPHENYLPROPIONIC ACID DERIVATIVES, PROCESSES FOR PRODUCTION OF THE DERIVATIVES, POLYMERS THEREOF AND RADIOSENSITIVE RESIN COMPOSITIONS | JSR Corporation (JP) | 2002-08-14 | — | — | EP | disclosed |
| EP-1225480-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2002-07-24 | — | — | EP | disclosed |
| US-20020090569-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-07-11 | — | — | US | disclosed |
| EP-1212369-A1 | COPOLYCARBONATE PREPARATION BY SOLID STATE POLYMERIZATION | GENERAL ELECTRIC COMPANY (US) | 2002-06-12 | — | — | EP | disclosed |
| US-6403288-B1 | COATING WITH COPOLYMER COMPRISING HYDROXYSTYRENE DERIVATIVE MONOMER HAVING ACID DISSOCIABLE GROUP; EXPOSURE TO RADIATION; DEVELOPMENT | JSR CORPORATION (JP) | 2002-06-11 | — | — | US | disclosed |
| US-6403280-B1 | TERPOLYMER COMPRISING MALEIC ANHYDRIDE, NORBORNENE ESTER DERIVATIVE, AND ALICYCLIC (METH)ACRYLATE MONOMERS; DURABILITY TO DRY ETCHING; TRANSPARENCY, STORAGE STABILITY | JSR CORPORATION (JP) | 2002-06-11 | — | — | US | disclosed |
| WO-2002042845-A2 | PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | SHIPLEY COMPANY, L.L.C. (US) | 2002-05-30 | — | — | WO | disclosed |
| US-20020058201-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-05-16 | — | — | US | disclosed |
| US-20020051932-A1 | Photoresists for imaging with high energy radiation | SHIPLEY COMPANY, L.L.C. | 2002-05-02 | — | — | US | disclosed |
| EP-1193558-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2002-04-03 | — | — | EP | disclosed |
| EP-0691575-B1 | Positive photosensitive composition | FUJI PHOTO FILM CO LTD (JP) | 2002-03-20 | — | — | EP | disclosed |
| WO-2002019033-A2 | PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | SHIPLEY COMPANY, L.L.C. (US) | 2002-03-07 | — | — | WO | disclosed |
| WO-2002017019-A2 | OXIME SULFONATE AND N-OXYIMIDOSULFONATE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | SHIPLEY COMPANY, L.L.C. (US) | 2002-02-28 | — | — | WO | disclosed |
| US-20020012872-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-01-31 | — | — | US | disclosed |
| US-20020009668-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-01-24 | — | — | US | disclosed |
| US-20020009667-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-01-24 | — | — | US | disclosed |
| US-20020009663-A1 | Photoacid generators and photoresists comprising same | SHIPLEY COMPANY, L.L.C. | 2002-01-24 | — | — | US | disclosed |
| CN-1332205-A | Radiation-sensitive resin composition | JSR CORP (JP) | 2002-01-23 | — | — | CN | disclosed |
| US-6337171-B1 | AS A RESIST APPLICABLE TO FAR ULTRAVIOLET RAYS SUCH AS A KRF EXCIMER LASER, CHARGED PARTICLE RAYS SUCH AS ELECTRON BEAMS, AND X-RAYS | JSR CORPORATION (JP) | 2002-01-08 | — | — | US | disclosed |
| US-20020001770-A1 | PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | SHIPLEY COMPANY, L.L.C. | 2002-01-03 | — | — | US | disclosed |
| US-6333394-B1 | BIREFRINGENCE-REDUCING OR ?SOFT BLOCK? UNITS; MELT POLYMERIZATION OR EQUILIBRATION, OF A PRECURSOR POLYCARBONATE AND A MONOMER, OLIGOMER, OR HIGH MOLECULAR WEIGHT POLYCARBONATE WHICH IS A SOURCE OF OTHER STRUCTURAL UNITS; | GENERAL ELECTRIC COMPANY | 2001-12-25 | — | — | US | disclosed |
| EP-1164433-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-12-19 | — | — | EP | disclosed |
| EP-1164434-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-12-19 | — | — | EP | disclosed |
| EP-1162506-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-12-12 | — | — | EP | disclosed |
| US-20010041769-A1 | Polysiloxane, method of manufacturing same, silicon-containingalicyclic compouns, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-11-15 | — | — | US | disclosed |
| US-6310147-B1 | EPOXY RESIN AND BIFUNCTIONAL ESTER AS CURING AGENT AND PROMOTERS OF AMINO PHOSPHORUS OXIDE | MITSUI CHEMICALS, INC. (JP) | 2001-10-30 | — | — | US | disclosed |
| EP-1142928-A1 | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds | JSR Corporation (JP) | 2001-10-10 | — | — | EP | disclosed |
| EP-1140827-A1 | SYNTHESIS OF PHENOLIC MONOMERS CONTAINING IMIDE OR DIIMIDE MOIETIES AND HIGH HEAT CARBONATE POLYMERS PREPARED THEREFROM | GENERAL ELECTRIC COMPANY (US) | 2001-10-10 | — | — | EP | disclosed |
| US-6297332-B1 | FOR SEALING A SEMICONDUCTOR INTEGRATED CIRCUIT, AMINOPHOSPHINE OXIDE AS IMPROVED ACCELERATING AGENT, PACKAGE BETTER IN CRACK RESISTANCE | MITSUI CHEMICALS, INC. (JP) | 2001-10-02 | — | — | US | disclosed |
| US-20010023050-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-09-20 | — | — | US | disclosed |
| WO-2001063363-A2 | PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | SHIPLEY COMPANY, L.L.C. (US) | 2001-08-30 | — | — | WO | disclosed |
| EP-1122605-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-08-08 | — | — | EP | disclosed |
| US-6235446-B1 | MIXTURE OF P-HYDROXYSTYRENE, ACRYLATED ESTER | JSR CORPORATION (JP) | 2001-05-22 | — | — | US | disclosed |
| EP-1099691-A1 | N-Sulfonyloxyimide compound and radiation-sensitive resin composition using the same | JSR Corporation (JP) | 2001-05-16 | — | — | EP | disclosed |
| US-RE37179-E1 | ADDITION POLYMER | JSR CORPORATION (JP) | 2001-05-15 | — | — | US | disclosed |
| EP-1085379-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-03-21 | — | — | EP | disclosed |
| JP-2001064247-A | AROMATIC DIAMINO COMPOUND | MITSUI CHEMICALS INC | 2001-03-13 | — | — | JP | disclosed |
| WO-2001014453-A1 | COPOLYCARBONATE PREPARATION BY SOLID STATE POLYMERIZATION | GENERAL ELECTRIC COMPANY (US) | 2001-03-01 | — | — | WO | disclosed |
| US-6183934-B1 | FOE USE IN FORMATION OF PATTERN OF INSULATION FILM, PASSIVATION FILM, .ALPHA.-RAY SHIELDING FILM, OPTICAL WAVEGUIDE | KABUSHIKI KAISHA TOSHIBA (JP) | 2001-02-06 | — | — | US | disclosed |
| US-6180316-B1 | SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS | JSR CORPORATION (JP) | 2001-01-30 | — | — | US | disclosed |
| EP-0793144-B1 | Radiation sensitive composition | JAPAN SYNTHETIC RUBBER CO LTD (JP) | 2001-01-17 | — | — | EP | disclosed |
| US-6159654-A | Negative photosensitive polymer composition of a thermosetting polymer precursor curable by cyclodehydration upon heating | KABUSHIKI KAISHA TOSHIBA (JP) | 2000-12-12 | — | — | US | disclosed |
| US-6143460-A | PHOTOACID GENERATOR PROVIDING IMPROVED PHOTORESIST RESOLUTION | JSR CORPORATION (JP) | 2000-11-07 | — | — | US | disclosed |
| EP-1048983-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 2000-11-02 | — | — | EP | disclosed |
| US-6136500-A | CONTAINS A PHOTOACID GENERATOR COMPRISING A COMBINATION OF A COMPOUND THAT GENERATES A CARBOXYLIC ACID UPON EXPOSURE TO RADIATION AND ANOTHER COMPOUND THAT GENERATES ANOTHER ACID UPON EXPOSURE TO RADIATION | JSR CORPORATION (JP) | 2000-10-24 | — | — | US | disclosed |
| US-6120972-A | COPOLYMER OF ACRYLIC ESTER AND CARBONATE WITH PHOTOACID GENERATOR FOR PHOTOSENSITIVE ELEMENTS | JSR CORPORATION (JP) | 2000-09-19 | — | — | US | disclosed |
| EP-1035436-A1 | Resist pattern formation method | JSR Corporation (JP) | 2000-09-13 | — | — | EP | disclosed |
| US-6096853-A | Synthesis of phenolic monomers containing imide or diimide moieties and high heat carbonate polymers prepared therefrom | GENERAL ELECTRIC COMPANY (US) | 2000-08-01 | — | — | US | disclosed |
| WO-2000037442-A1 | SYNTHESIS OF PHENOLIC MONOMERS CONTAINING IMIDE OR DIIMIDE MOIETIES AND HIGH HEAT CARBONATE POLYMERS PREPARED THEREFROM | GENERAL ELECTRIC COMPANY (US) | 2000-06-29 | — | — | WO | disclosed |
| EP-1011029-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2000-06-21 | — | — | EP | disclosed |
| WO-2000010056-A9 | PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | SHIPLEY CO LLC (US) | 2000-06-08 | — | — | WO | disclosed |
| EP-0726500-B1 | Chemically amplified, radiation-sensitive resin composition | JAPAN SYNTHETIC RUBBER CO LTD (JP) | 2000-05-31 | — | — | EP | disclosed |
| US-6048672-A | RELIEF IMAGES ON SUBSTRATES WITH TITANIUM NITRIDE SURFACES, HEATING, COATING, EXPOSURE AND DEVELOPMENT | SHIPLEY COMPANY, L.L.C. (US) | 2000-04-11 | — | — | US | disclosed |
| US-6037107-A | EXPOSING TO ACTIVATION RADIATION A POSITIVE WORKING PHOTORESIST COMPRISING AN ALKALI SOLUBLE RESIN SUBSTITUTED WITH AN ACID LABILE BLOCKING GROUP TO GENERATE HALOGENATED SULFONIC ACID BY PHOTOLYSIS | SHIPLEY COMPANY, L.L.C. (US) | 2000-03-14 | — | — | US | disclosed |
| WO-2000010056-A1 | PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | SHIPLEY COMPANY, L.L.C. (US) | 2000-02-24 | — | — | WO | disclosed |
| CN-1239116-A | Epoxy-resin composition and use thereof | MITSUI CHEMICALS INC (US) | 1999-12-22 | — | — | CN | disclosed |
| US-6001517-A | A THERMOSETTING POLYMER WHICH CAN BE CURED THROUGH CYCLODEHYDRATION UPON HEATING AND A CURE ACCELERATOR WHICH CAN BE DEACTIVATED OF ITS CURE ACCELERATION PROPERTY BY IRRIDIATION OF LIGHT | KABUSHIKI KAISHA TOSHIBA (JP) | 1999-12-14 | — | — | US | disclosed |
| CN-1236788-A | Epoxy-resin composition and use thereof | MITSUI CHEMICALS INC (JP) | 1999-12-01 | — | — | CN | disclosed |
| EP-0959088-A2 | An epoxy-resin composition and use thereof | Mitsui Chemicals, Inc. (JP) | 1999-11-24 | — | — | EP | disclosed |
| EP-0959389-A1 | Diazodisulfone compound and radiation-sensitive resin composition | JSR Corporation (JP) | 1999-11-24 | — | — | EP | disclosed |
| EP-0953588-A2 | An epoxy-resin composition and use thereof | Mitsui Chemicals, Inc. (JP) | 1999-11-03 | — | — | EP | disclosed |
| US-5962180-A | COMPRISING (A) A COPOLYMER COMPRISING RECURRING UNITS OF A P-HYDROXYSTYRENE UNIT AND A STYRENE UNIT HAVING AN ACETAL GROUP OR A KETAL GROUP AT THE P-POSITION, (B) A COPOLYMER COMPRISING RECURRING UNITS OF A T-BUTYL (METH)ACRYLATE UNIT | JSR CORPORATION (JP) | 1999-10-05 | — | — | US | disclosed |
| EP-0938029-A2 | Methods using photoresist compositions and articles produced therewith | Shipley Company LLC (US) | 1999-08-25 | — | — | EP | disclosed |
| EP-0930541-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 1999-07-21 | — | — | EP | disclosed |
| EP-0659802-B1 | Polyimide | MITSUI CHEMICALS INC (JP) | 1999-03-17 | — | — | EP | disclosed |
| EP-0901043-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 1999-03-10 | — | — | EP | disclosed |
| EP-0898201-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 1999-02-24 | — | — | EP | disclosed |
| US-5847196-A | Oxanilide U-V absorbers | GENERAL ELECTRIC COMPANY (US) | 1998-12-08 | — | — | US | disclosed |
| US-5824451-A | CONTAINING RESIN INSOLUBLE IN WATER BUT SOLUBLE IN ALKALI SOLUTION, COMPOUND GENERATING ACID WHEN IRRADIATED, LOW MOLECULAR WEIGHT ACID-DECOMPOSABLE DISSOLUTION INHIBITOR;LITHOGRAPHIC PLATE, INTEGRATED CIRCITS | FUJI PHOTO FILM CO., LTD. (JP) | 1998-10-20 | — | — | US | disclosed |
| CN-1188103-A | Oxanilide U-V absorbers | GEN ELECTRIC (US) | 1998-07-22 | — | — | CN | disclosed |
| EP-0853080-A1 | Oxanilide U-V absorbers | GENERAL ELECTRIC COMPANY (US) | 1998-07-15 | — | — | EP | disclosed |
| US-5753407-A | Polyamic acid composition | KABUSHIKI KAISHA TOSHIBA (JP) | 1998-05-19 | — | — | US | disclosed |
| US-5731125-A | FOR FORMING RESIST FILM | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1998-03-24 | — | — | US | disclosed |
| US-5698732-A | Oxanilide U-V absorbers | GENERAL ELECTRIC COMPANY (US) | 1997-12-16 | — | — | US | disclosed |
| US-5693452-A | FOR USE IN PRODUCTION OF SEMICONDUCTORS | FUJI PHOTO FILM CO., LTD. (JP) | 1997-12-02 | — | — | US | disclosed |
| EP-0478321-B1 | Photosenstive resin composition for forming polyimide film pattern and method of forming polyimide film pattern | TOSHIBA KK (JP) | 1997-11-12 | — | — | EP | disclosed |
| US-5679495-A | TERPOLYMER PHOTORESIST CONTAINING VINYLPHENOL DERIVATIVE, TERT-BUTYL (METH)ACRYLATE, AND A UNIT TO REDUCE ALKALINE SOLUBILITY; DRY ETCH RESISTANCE | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1997-10-21 | — | — | US | disclosed |
| EP-0793144-A2 | Radiation sensitive composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1997-09-03 | — | — | EP | disclosed |
| US-5631377-A | LONG-CHAIN AROMATIC DIAMINE MONOMER; MELT PROCESSABILITY, HEAT RESISTANCE | MITSUI TOATSU CHEMICALS, INC. (JP) | 1997-05-20 | — | — | US | disclosed |
| EP-0660187-B1 | Radiation-sensitive resin composition | JAPAN SYNTHETIC RUBBER CO LTD (JP) | 1997-03-05 | — | — | EP | disclosed |
| EP-0356172-B1 | Epoxy resins containing imido rings, production process thereof, and epoxy resin compositions containing the same | MITSUI TOATSU CHEMICALS (JP) | 1997-01-15 | — | — | EP | disclosed |
| US-5585217-A | Polyamic acid composition | KABUSHIKI KAISHA TOSHIBA (JP) | 1996-12-17 | — | — | US | disclosed |
| US-5580695-A | POLYHYDROXYSTYRENE AS ALKALI-SOLUBLE RESIN; TRIPHENYLSULFONIUM TRIFLUOROMETHANESULFONATE AS ACID GENERATING AGENT | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1996-12-03 | — | — | US | disclosed |
| US-5556734-A | RESISTS | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1996-09-17 | — | — | US | disclosed |
| EP-0726500-A1 | Chemically amplified, radiation-sensitive resin composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1996-08-14 | — | — | EP | disclosed |
| US-5518864-A | PHOTOSENSITIVE, QUINONE DIAZIDE | KABUSHIKI KAISHA TOSHIBA (JP) | 1996-05-21 | — | — | US | disclosed |
| EP-0709736-A1 | Positive chemically amplified resist composition and method for producing compounds used therein | FUJI PHOTO FILM CO., LTD. (JP) | 1996-05-01 | — | — | EP | disclosed |
| US-5508377-A | IMPROVED PROCESSABILITY, HEAT RESISTANCE; ELECTRONICS, STRUCTURAL MATERIALS | MITSUI TOATSU CHEMICALS, INC. (JP) | 1996-04-16 | — | — | US | disclosed |
| JP-H0881556-A | POLYIMIDE | MITSUI TOATSU CHEM INC | 1996-03-26 | — | — | JP | disclosed |
| US-5491201-A | HEAT/CHEMICAL RESISTANCE; HIGH MECHANICAL STRENGTH | THE DOW CHEMICAL COMPANY (US) | 1996-02-13 | — | — | US | disclosed |
| EP-0691575-A2 | Positive photosensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 1996-01-10 | — | — | EP | disclosed |
| EP-0524419-B1 | Heat-sensitive recording materials and phenol compounds | MITSUI TOATSU CHEMICALS (JP) | 1995-09-06 | — | — | EP | disclosed |
| EP-0431971-B1 | Photosensitive composition and resin-encapsulated semiconductor device | TOSHIBA KK (JP) | 1995-07-19 | — | — | EP | disclosed |
| EP-0659802-A1 | Polyimide | MITSUI TOATSU CHEMICALS, Inc. (JP) | 1995-06-28 | — | — | EP | disclosed |
| EP-0660187-A1 | Radiation-sensitive resin composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1995-06-28 | — | — | EP | disclosed |
| US-5391806-A | A storage stable chromogens as color-developing agent or stabilizers | MITSUI TOATSU CHEMICALS, INCORPORATED (JP) | 1995-02-21 | — | — | US | disclosed |
| US-5348835-A | Without photoresist | KABUSHIKI KAISHA TOSHIBA (JP) | 1994-09-20 | — | — | US | disclosed |
| US-5340684-A | Polyimidesiloxane copolymers | KABUSHIKI KAISHA TOSHIBA (JP) | 1994-08-23 | — | — | US | disclosed |
| US-5338828-A | Mesogenic cyclic imino ether-containing compositions and polymerization products thereof | THE DOW CHEMICAL COMPANY (US) | 1994-08-16 | — | — | US | disclosed |
| JP-H06172273-A | PRODUCTION OF 2-@(3754/24)4-HYDROXYPHENYL)-2-(4'-AMINOPHENYL)-PROPANE | MITSUI TOATSU CHEM INC | 1994-06-21 | — | — | JP | disclosed |
| EP-0359341-B1 | 1,6-diazaspiro[4,4]nonane-2,7-dione derivatives | SHELL INT RESEARCH (NL) | 1994-02-16 | — | — | EP | disclosed |
| US-5281675-A | Liquid crystal polymers | THE DOW CHEMICAL COMPANY (US) | 1994-01-25 | — | — | US | disclosed |
| US-5270281-A | Chromogenic compound | MITSUI TOATSU CHEMICALS, INCORPORATED (JP) | 1993-12-14 | — | — | US | disclosed |
| EP-0359500-B1 | Resin compositions for sealing semiconductors | MITSUI TOATSU CHEMICALS (JP) | 1993-12-08 | — | — | EP | disclosed |
| EP-0558280-A1 | Chemically amplified resist | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1993-09-01 | — | — | EP | disclosed |
| EP-0524419-A1 | Heat-sensitive recording materials and phenol compounds | MITSUI TOATSU CHEMICALS, Inc. (JP) | 1993-01-27 | — | — | EP | disclosed |
| EP-0523957-A1 | Radiation-sensitive composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1993-01-20 | — | — | EP | disclosed |
| JP-H04328121-A | EPOXY RESIN COMPOSITION FOR SEALING SEMICONDUCTOR | SUMITOMO BAKELITE CO LTD | 1992-11-17 | — | — | JP | disclosed |
| US-5145937-A | Solvent and alkali resistant | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION (US) | 1992-09-08 | — | — | US | disclosed |
| US-5120803-A | Modified epoxy resin and silicon polymer | MITSUI TOATSU CHEMICALS, INC. (JP) | 1992-06-09 | — | — | US | disclosed |
| EP-0478321-A1 | Photosenstive resin composition for forming polyimide film pattern and method of forming polyimide film pattern | KABUSHIKI KAISHA TOSHIBA (JP) | 1992-04-01 | — | — | EP | disclosed |
| US-5089560-A | Fiber reinforced composites | AMOCO CORPORATION (US) | 1992-02-18 | — | — | US | disclosed |
| US-5082880-A | Shock and heat resistant | MITSUI TOATSU CHEMICALS, INC. (JP) | 1992-01-21 | — | — | US | disclosed |
| US-5079331-A | Sealing electronic devices such as semiconductors, polyepoxides, hardeners | MITSUI TOATSU CHEMICAL, INC. (JP) | 1992-01-07 | — | — | US | disclosed |
| US-5061780-A | Poly(ether-bis-imide-spiro dilactam) polymer | SHELL OIL COMPANY (US) | 1991-10-29 | — | — | US | disclosed |
| JP-H03231916-A | POLYOL COMPOSITION AND USE THEREOF | MITSUI TOATSU CHEM INC | 1991-10-15 | — | — | JP | disclosed |
| US-5053518-A | Hydroxy-substituted cyclic-1,6-diaza[4.4]spirodilactams | SHELL OIL COMPANY (US) | 1991-10-01 | — | — | US | disclosed |
| EP-0256470-B1 | LINEAR POLYURETHANE ELASTOMERS AND PROCESS FOR THEIR PREPARATION | BAYER AG (DE) | 1991-08-14 | — | — | EP | disclosed |
| EP-0431971-A2 | Photosensitive composition and resin-encapsulated semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 1991-06-12 | — | — | EP | disclosed |
| JP-H0341067-A | PRODUCTION OF 2-(4-HYDROXYPHENYL)-2-(4'-MALEIMIDEPHENYL) PROPANE | MITSUI TOATSU CHEM INC | 1991-02-21 | — | — | JP | disclosed |
| JP-H03724-A | HEAT-RESISTANT THERMOSETTING RESIN COMPOSITION | MITSUI TOATSU CHEM INC | 1991-01-07 | — | — | JP | disclosed |
| JP-H03725-A | HEAT-RESISTANT EPOXY RESIN COMPOSITION | MITSUI TOATSU CHEM INC | 1991-01-07 | — | — | JP | disclosed |
| US-4977218-A | FILLERS FOR EPOXY RESINS; COMPRESSIVE AND IMPACT STRENGTH | AMOCO CORPORATION (US) | 1990-12-11 | — | — | US | disclosed |
| US-4977215-A | CONTAINING EPOXY RESIN | AMOCO CORPORATION (US) | 1990-12-11 | — | — | US | disclosed |
| EP-0400898-A2 | Heat resistant epoxy resin composition | MITSUI TOATSU CHEMICALS, Inc. (JP) | 1990-12-05 | — | — | EP | disclosed |
| US-4957994-A | Epoxy resins containing imido rings, production process thereof and epoxy resin compositions containing the same | MITSUI TOATSU CHEMICALS, INC. (JP) | 1990-09-18 | — | — | US | disclosed |
| EP-0166693-B1 | SUBSTITUTED UNSATURATED BICYCLIC IMIDES WITH HYDROXYL GROUPS, AND THEIR POLYMERS | CIBA-GEIGY AG (CH) | 1990-07-11 | — | — | EP | disclosed |
| US-4939251-A | Novel spirolactones | SHELL OIL COMPANY (US) | 1990-07-03 | — | — | US | disclosed |
| JP-H02147621-A | EPOXY RESIN HAVING IMIDE RING, PREPARATION THEREOF AND EPOXY RESIN COMPOSITION CONTAINING THE SAME RESIN | MITSUI TOATSU CHEM INC | 1990-06-06 | — | — | JP | disclosed |
| EP-0359341-A2 | 1,6-diazaspiro[4,4]nonane-2,7-dione derivatives | SHELL INTERNATIONALE RESEARCHMAATSCHAPPIJ B.V. (NL) | 1990-03-21 | — | — | EP | disclosed |
| EP-0356172-A2 | Epoxy resins containing imido rings, production process thereof, and epoxy resin compositions containing the same | MITSUI TOATSU CHEMICALS, Inc. (JP) | 1990-02-28 | — | — | EP | disclosed |
| EP-0351025-A2 | Fiber reinforced composites toughened with carboxylated rubber particles | AMOCO CORPORATION (US) | 1990-01-17 | — | — | EP | disclosed |
| US-4820798-A | Cyanate functional maleimide thermosetting composition | THE DOW CHEMICAL COMPANY (US) | 1989-04-11 | — | — | US | disclosed |
| US-4820797-A | ACETYLENIC COPOLYMERS | THE DOW CHEMICAL COMPANY (US) | 1989-04-11 | — | — | US | disclosed |
| US-4791187-A | POLYUREAS, POLYESTERURETHANE COPOLYMERS; MELT SPINNING; LIQUID CRYSTAL CHAIN EXTENDERS | BAYER AKTEINGESELLSCHAFT (DE) | 1988-12-13 | — | — | US | disclosed |
| EP-0291552-A1 | Cyanate functional maleimides | THE DOW CHEMICAL COMPANY (US) | 1988-11-23 | — | — | EP | disclosed |
| US-4769440-A | FLEXIBILITY | THE DOW CHEMICAL COMPANY (US) | 1988-09-06 | — | — | US | disclosed |
| US-4731426-A | Polymerization product from cyanate functional maleimide | THE DOW CHEMICAL COMPANY (US) | 1988-03-15 | — | — | US | disclosed |
| US-4728742-A | NON-CONJUGATED POLYENES | CIBA-GEIGY CORPORATION (US) | 1988-03-01 | — | — | US | disclosed |
| EP-0256470-A2 | Linear polyurethane elastomers and process for their preparation | BAYER AG (DE) | 1988-02-24 | — | — | EP | disclosed |
| US-4683276-A | CASTING, LAMINATION, COATING | THE DOW CHEMICAL COMPANY (US) | 1987-07-28 | — | — | US | disclosed |
| US-4680378-A | Cyanate functional maleimide and polyamine copolymer | THE DOW CHEMICAL COMPANY (US) | 1987-07-14 | — | — | US | disclosed |
| JP-S62145063-A | NOVEL DIPHENOL HAVING IMIDE RING AND PRODUCTION THEREOF | MITSUI TOATSU CHEM INC | 1987-06-29 | — | — | JP | disclosed |
| US-4654401-A | SOLVENT RESISTANCE, HIGH IMPACT STRENGTH MOLDING MATERIAL | GENERAL ELECTRIC COMPANY (US) | 1987-03-31 | — | — | US | disclosed |
| JP-S6210051-A | NOVEL ETHERDIAMINE AND PRODUCTION THEREOF | MITSUI TOATSU CHEM INC | 1987-01-19 | — | — | JP | disclosed |
| US-4632962-A | USING IN MAKING MODIFIED POLYESTERS, POLYCARBONATES | GENERAL ELECTRIC COMPANY (US) | 1986-12-30 | — | — | US | disclosed |
| EP-0166693-A2 | Substituted unsaturated bicyclic imides with hydroxyl groups, and their polymers | CIBA-GEIGY AG (CH) | 1986-01-02 | — | — | EP | disclosed |
| EP-0051687-B1 | MALEIMIDES AND PROCESS FOR THE PREPARATION OF SAME | MITSUI TOATSU CHEMICALS, Inc. (JP) | 1984-05-16 | — | — | EP | disclosed |
| JP-S58177945-A | NOVEL AROMATIC DIAMINE AND ITS PREPARATION | MITSUI TOATSU CHEM INC | 1983-10-18 | — | — | JP | disclosed |
| US-4400521-A | RESINS, VARNICHES, CURING AGENTS, LAMINATION, ADHESIVES, HEAT RESISTANCE | MITSUI TOATSU CHEMICALS, INCORPORATED (JP) | 1983-08-23 | — | — | US | disclosed |
| US-4374272-A | Process for preparing 2-(4'-hydroxyaryl)-2-(4'-aminoaryl)-propanes | MITSUI TOATSU CHEMICALS, INC. (JP) | 1983-02-15 | — | — | US | disclosed |
| US-4351957-A | Process for preparing diaminodiphenyl-alkanes | THE UPJOHN COMPANY (US) | 1982-09-28 | — | — | US | disclosed |
| EP-0051687-A1 | Maleimides and process for the preparation of same | MITSUI TOATSU CHEMICALS, Inc. (JP) | 1982-05-19 | — | — | EP | disclosed |
| JP-S5745092-A | RECORDING MATERIAL | MITSUI TOATSU CHEM INC | 1982-03-13 | — | — | JP | disclosed |
| US-4177211-A | Process for the preparation of bis(aminophenyl)alkanes | THE UPJOHN COMPANY (US) | 1979-12-04 | — | — | US | disclosed |
| US-4094861-A | Process for the production of non-inflammable polytriazines | BAYER AKTIENGESELLSCHAFT (DT) | 1978-06-13 | — | — | US | disclosed |
| US-4082768-A | NEW IMIDES OF UNSATURATED DICARBOXYLIC ACIDS, PROCESSES FOR THEIR MANUFACTURE, AND THEIR USE | CIBA-GEIGY CORPORATION (US) | 1978-04-04 | — | — | US | disclosed |
| US-4059567-A | High molecular weight polytriazines of soluble polymeric N-cyano-isourea ethers | BAYER AKTIENGESELLSCHAFT (DT) | 1977-11-22 | — | — | US | disclosed |
| US-3960812-A | DIELECTRICS, MECHANICAL PROPERTIES | CIBA-GEIGY CORPORATION (US) | 1976-06-01 | — | — | US | disclosed |
| US-3960812-A | DIELECTRICS, MECHANICAL PROPERTIES | CIBA-GEIGY CORPORATION (US) | 1976-06-01 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (50 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20090318652-A1 | NOVEL COMPOUND, POLYMER, AND RESIN COMPOSITION | ERCC4, RAD51, RTF1 | ESR1 653/4885ESR2 1037/4885CYP3A4 4757/4885 |
| US-20030194634-A1 | Novel anthracene derivative and radiation-sensitive resin composition | SRSF1, ARL1, ERCC4 | ESR1 683/4885ESR2 1051/4885CYP3A4 4324/4885 |
| US-20120148952-A1 | RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND | RAD1, RER1, RPA1 | ESR1 331/4885ESR2 966/4885CYP3A4 2993/4885 |
| US-20140363769-A1 | PHOTORESIST COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, ACID GENERATING AGENT, AND PHOTODEGRADABLE BASE | FRG1, FGFR1, IGF1R | ESR1 1051/4885ESR2 2179/4885CYP3A4 1405/4885 |
| US-20120115084-A1 | CROSSLINKING AGENT, NEGATIVE RESIST COMPOSITION, AND PATTERN FORMING METHOD USING THE NEGATIVE RESIST COMPOSITION | SEM1, ELL, POLL | ESR1 267/4885ESR2 61/4885CYP3A4 3456/4885 |
| US-20120156612-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING A RESIST PATTERN, COMPOUND, AND POLYMER | RER1, PRMT1, REV1 | ESR1 585/4885ESR2 1219/4885CYP3A4 3855/4885 |
| US-20120276482-A1 | RADIATION SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING A PATTERN, POLYMER AND COMPOUND | RAD51, MRE11, RER1 | ESR1 1298/4885ESR2 2096/4885CYP3A4 3771/4885 |
| US-20100024683-A1 | PHOSPHATE COMPOUND, METAL SALT THEREOF, DENTAL MATERIAL AND DENTAL COMPOSITION | CAD, PPIP5K2, SLC20A1 | ESR1 2561/4885ESR2 3805/4885CYP3A4 4831/4885 |
| US-20110287361-A1 | PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | PPOX, PARN, PNN | ESR1 2325/4885ESR2 3890/4885CYP3A4 2091/4885 |
| US-20120251947-A1 | CYCLIC COMPOUND, METHOD OF PRODUCING THE SAME, RADIATION SENSITIVE COMPOSITION, AND METHOD OF FORMING RESIST PATTERN | MRE11, SLC11A2, CROCC | ESR1 3009/4885ESR2 2030/4885CYP3A4 2359/4885 |
| US-11480877-B2 | Resist composition, method for forming resist pattern, and polyphenol compound used therein | SLC11A2, ABCC1, FBL | ESR1 245/4885ESR2 198/4885CYP3A4 1997/4885 |
| US-20100324329-A1 | COMPOUND | AFF2, AFF1, AFF4 | ESR1 395/4885ESR2 326/4885CYP3A4 1052/4885 |
| US-20160370700-A1 | PHOTORESIST COMPOSITION, COMPOUND, AND PRODUCTION METHOD THEREOF | RARA, H1-0, NR2E3 | ESR1 414/4885ESR2 612/4885CYP3A4 2154/4885 |
| US-20090280433-A1 | RADIATION-SENSITIVE COMPOSITION AND PROCESS FOR PRODUCING LOW-MOLECULAR COMPOUND FOR USE THEREIN | ACP1, PLG, ALG1 | ESR1 4663/4885ESR2 2863/4885CYP3A4 4785/4885 |
| US-20190163058-A1 | SALTS AND PHOTORESISTS COMPRISING SAME | SLC6A6, TST, SLC6A12 | ESR1 2042/4885ESR2 2188/4885CYP3A4 4084/4885 |
| US-12547072-B2 | Self-aligned build-up processing | MYBBP1A, SMURF1, MYB | ESR1 1842/4885ESR2 1963/4885CYP3A4 3499/4885 |
| US-10023548-B2 | Energy efficient manufacturing process for preparing N,O-triglycidyl aminophenols | HPD, PAH, ATIC | ESR1 97/4885ESR2 309/4885CYP3A4 28/4885 |
| US-20170285470-A1 | CHOLATE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | GGCT, LCAT, SLC7A11 | ESR1 1641/4885ESR2 3739/4885CYP3A4 535/4885 |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | ESR1 3319/4885ESR2 3628/4885CYP3A4 3096/4885 |
| US-10274824-B2 | Photobase generators and photoresist compositions comprising same | PPOX, CRY1, CCNB1 | ESR1 234/4885ESR2 1375/4885CYP3A4 1036/4885 |
| US-10809616-B2 | Cholate photoacid generators and photoresists comprising same | GGCT, LCAT, SLC7A11 | ESR1 1641/4885ESR2 3739/4885CYP3A4 535/4885 |
| US-20090069521-A1 | Novel Compound, Polymer, and Radiation-Sensitive Composition | MRE11, RAD51, MRPS22 | ESR1 219/4885ESR2 298/4885CYP3A4 4493/4885 |
| US-10303055-B2 | Resist composition and method for forming resist pattern | HEATR1, ABCC1, HEATR6 | ESR1 1708/4885ESR2 2376/4885CYP3A4 1660/4885 |
| US-20140248561-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM | ADH1C, ADH1A, FABP6 | ESR1 1296/4885ESR2 512/4885CYP3A4 2091/4885 |
| US-11880134-B2 | Salts and photoresists comprising same | SLC6A6, TST, XPOT | ESR1 2024/4885ESR2 2151/4885CYP3A4 4086/4885 |
| US-20160347709-A1 | ACID GENERATOR COMPOUNDS AND PHOTORESISTS COMPRISING SAME | HAO2, PHGDH, PAH | ESR1 831/4885ESR2 2109/4885CYP3A4 1640/4885 |
| US-20180052390-A1 | ONIUM COMPOUNDS AND METHODS OF SYNTHESIS THEREOF | NISCH, TST, SCLY | ESR1 2222/4885ESR2 2343/4885CYP3A4 2272/4885 |
| US-20190085173-A1 | ANTIREFLECTIVE COMPOSITIONS WITH THERMAL ACID GENERATORS | ASIC1, ASIC3, ASF1A | ESR1 3559/4885ESR2 3818/4885CYP3A4 4466/4885 |
| US-20170059991-A1 | COATING COMPOSITION FOR USE WITH AN OVERCOATED PHOTORESIST | COL14A1, COPE, COL2A1 | ESR1 762/4885ESR2 932/4885CYP3A4 1651/4885 |
| US-11256170-B2 | Compound, resist composition, and method for forming resist pattern using it | RDX, SLC11A2, FBL | ESR1 767/4885ESR2 1078/4885CYP3A4 2133/4885 |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | C9, C1R, RAD51 | ESR1 404/4885ESR2 596/4885CYP3A4 1964/4885 |
| US-20160124304-A1 | PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | GSS, PAG1, PPOX | ESR1 2094/4885ESR2 3563/4885CYP3A4 1457/4885 |
| US-20110117489-A1 | COMPOUND AND RADIATION-SENSITIVE COMPOSITION | ERCC2, RAD51, ATM | ESR1 790/4885ESR2 124/4885CYP3A4 2125/4885 |
| US-20140295347-A1 | ACID GENERATORS AND PHOTORESISTS COMPRISING SAME | PPOX, HAO2, DUOX1 | ESR1 1055/4885ESR2 2412/4885CYP3A4 1254/4885 |
| US-10429737-B2 | Antireflective compositions with thermal acid generators | ASIC1, ASIC3, ASF1A | ESR1 3559/4885ESR2 3818/4885CYP3A4 4466/4885 |
| US-20180246405-A1 | MATERIAL FOR LITHOGRAPHY, PRODUCTION METHOD THEREFOR, COMPOSITION FOR LITHOGRAPHY, PATTERN FORMATION METHOD, COMPOUND, RESIN, AND METHOD FOR PURIFYING THE COMPOUND OR THE RESIN | CROCC, TERB1, LRRC47 | ESR1 3167/4885ESR2 3390/4885CYP3A4 3279/4885 |
| US-20020172885-A1 | Novel carbazole derivative and chemically amplified radiation-sensitive resin composition | ARID2, RAD1, RAD51 | ESR1 1337/4885ESR2 1305/4885CYP3A4 2085/4885 |
| US-20150212414-A1 | IONIC THERMAL ACID GENERATORS FOR LOW TEMPERATURE APPLICATIONS | TRIM4, TRMT1, TRIM59 | ESR1 2842/4885ESR2 3781/4885CYP3A4 3308/4885 |
| US-20100221659-A1 | COMPOUND, SALT, AND RADIATION-SENSITIVE RESIN COMPOSITION | AFF1, RER1, AFF4 | ESR1 359/4885ESR2 843/4885CYP3A4 3605/4885 |
| US-20160176840-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM | ADH1C, ADH1A, FABP6 | ESR1 642/4885ESR2 311/4885CYP3A4 887/4885 |
| US-20110250537-A1 | CHOLATE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME | GGCT, LCAT, SLC7A11 | ESR1 1641/4885ESR2 3739/4885CYP3A4 535/4885 |
| US-11448960-B2 | Salts and photoresists comprising same | SLC6A6, TST, SLC6A12 | ESR1 2089/4885ESR2 2315/4885CYP3A4 3889/4885 |
| US-20130122423-A1 | COMPOUND, RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD | DDB1, DNAJB11, RAD51 | ESR1 452/4885ESR2 517/4885CYP3A4 912/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | ESR1 446/4885ESR2 699/4885CYP3A4 1754/4885 |
| US-20120171379-A1 | RADIATION-SENSITIVE COMPOSITION | PARG, RAD51, SRMS | ESR1 86/4885ESR2 279/4885CYP3A4 2580/4885 |
| US-20130011783-A1 | MONOMERS, POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS | PARG, MMAB, MAT1A | ESR1 1071/4885ESR2 3157/4885CYP3A4 3024/4885 |
| US-20190056657-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | C9, C5, C1R | ESR1 446/4885ESR2 699/4885CYP3A4 1754/4885 |
| US-20020009663-A1 | Photoacid generators and photoresists comprising same | GSS, TST, SQOR | ESR1 2831/4885ESR2 3528/4885CYP3A4 1732/4885 |
| US-20180074406-A1 | COMPOUND, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING IT | RDX, SLC11A2, FBL | ESR1 767/4885ESR2 1078/4885CYP3A4 2133/4885 |
| US-20170183279-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM | ADH1C, FABP6, ADH1A | ESR1 1092/4885ESR2 527/4885CYP3A4 1117/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.