SCHEMBL64791

SCHEMBL64791

CS(=O)(=O)Oc1cccc(OS(C)(=O)=O)c1OS(C)(=O)=O

nearest known ligand 0.44

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 1/20 0.44
ALPL P05186 1/20 0.44
TSHR P16473 1/20 0.44
HSD17B10 Q99714 1/20 0.44
KDM4E B2RXH2 1/20 0.37
KMT2A Q03164 1/20 0.37
CA2 P00918 3/20 0.33
ELANE P08246 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
METAP2 P50579 1/20 0.33
METAP1 P53582 1/20 0.33
CA1 P00915 2/20 0.32
CA9 Q16790 2/20 0.32
PIK3CB P42338 1/20 0.32
NFE2L2 Q16236 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9958029 0.92 SMN1; SMN2 (0.44) CYP1A2ALPLTSHRHSD17B10KDM4E
SCHEMBL14500654 0.87 TSHR (0.46) CYP1A2ALPLTSHRHSD17B10KDM4E
SCHEMBL9958678 0.86 CYP1A2 (0.41) CYP1A2ALPLTSHRHSD17B10CA2
SCHEMBL2460830 0.86 SMN1; SMN2 (0.47) HSD17B10KDM4ECA2SMN1; SMN2CA1
SCHEMBL5702524 0.86 HSD17B10 (0.41) CYP1A2ALPLTSHRHSD17B10KDM4E
SCHEMBL5541874 0.86 CYP1A2 (0.39) CYP1A2ALPLTSHRHSD17B10KDM4E
SCHEMBL20943735 0.84 DRD2 (0.38) CYP1A2ALPLTSHRHSD17B10
SCHEMBL9958216 0.83 CA12 (0.44) CYP1A2ALPLTSHRHSD17B10CA2
SCHEMBL8776805 0.82 FNTA (0.39) CYP1A2ALPLTSHRHSD17B10KDM4E
SCHEMBL3839152 0.82 NFE2L2 (0.42) KDM4EKMT2ACA2ELANESMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1934 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118666718-A 1,2, 3-Trimethylsulfonyloxybenzene, preparation method and application 先微康新材料科技有限公司 2024-09-20 CN claimed
US-20240294771-A1 ANTI-REFLECTIVE COATING COMPOSITION AND CROSSLINKABLE POLYMER Tan Kah Kee Innovation Laboratory (CN) 2024-09-05 US claimed
CN-118244576-A Photosensitive resin composition and cured film thereof 罗门哈斯电子材料韩国有限公司 2024-06-25 CN claimed
WO-2023070957-A1 ANTI-REFLECTIVE COATING COMPOSITION AND CROSSLINKABLE POLYMER 嘉庚创新实验室 2023-05-04 WO claimed
CN-113913075-B Anti-reflective coating composition and crosslinkable polymer 嘉庚创新实验室 2022-09-20 CN claimed
WO-2012104262-A1 PHOTORESPONSIVE MICROCAPSULES AND COMPOSITIONS CONTAINING SAME UNIVERSIDAD DE SEVILLA (ES) 2012-08-09 WO claimed
EP-2467122-A2 PHOTORESPONSIVE SUNSCREEN COMPOSITION Blueshift Pharma GmbH (CH) 2012-06-27 EP claimed
US-20120148647-A1 Photoresponsive Sunscreen Composition BLUESHIFT PHARMA GMBH (CH) 2012-06-14 US claimed
WO-2011020928-A2 PHOTORESPONSIVE SUNSCREEN COMPOSITION BLUESHIFT PHARMA GMBH (CH) 2011-02-24 WO claimed
US-6924079-B2 Resist resin, chemical amplification type resist, and method of forming of pattern with the same NEC CORPORATION (JP) 2005-08-02 US claimed
US-6274286-B1 Resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-08-14 US claimed
US-5994022-A BECOMES SOLUBLE IN ALKALI DEVELOPING SOLUTION BY ACTION OF AN ACID JSR CORPORATION (JP) 1999-11-30 US claimed
US-5916728-A RESIN WHICH IS CONVERTED TO ALKALI-SOLUBLE FROM ALKALI-INSOLUBLE OR ALKALI-SLIGHTLY SOLUBLE BY THE ACTION OF AN ACID, ACID GENERATOR AND TERTIARY AMINE COMPOUND HAVING AN ALIPHATIC HYDROXYL GROUP. SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 1999-06-29 US claimed
US-5738975-A MIXTURE CONTAINING (METH)ACRYLATE TERPOLYMER HAVING GROUP WHICH REACTS WITH AN ACID TO CONVERT POLARITY OF POLYMER, PHOTO ACID GENERATING COMPOUND, SOLVENT NEC CORPORATION (JP) 1998-04-14 US claimed
US-5621019-A PHOTORESIST CONTAINING PHOTO ACID GENERATOR AND ULTRAVIOLET RADIATION TRANSPARENT ACRYLIC POLYMER HAVING BRIDGED CYCLOHYDROCARBON GROUP RESIDUE; RESOLUTION, DRY ETCH RESISTANCE NEC CORPORATION (JP) 1997-04-15 US claimed
US-5536616-A Photoresists containing water soluble sugar crosslinking agents CORNELL RESEARCH FOUNDATION, INC. (US) 1996-07-16 US claimed
US-5532106-A MICROELECTRONICS WITH POLYMERS, PHOTOACTIVE AGENTS AND DISSOLUTION INHIBITORS CORNELL RESEARCH FOUNDATION, INC. (US) 1996-07-02 US claimed
US-5470996-A Pattern forming material and process for forming pattern using the same HITACHI, LTD. (JP) 1995-11-28 US claimed
US-5118582-A PATTERN FORMING MATERIAL AND PROCESS FOR FORMING PATTERN USING THE SAME HITACHI, LTD. (JP) 1992-06-02 US claimed
JP-6348015-A None JP disclosed
CN-122072438-A Underlayer composition for manufacturing electronic devices 杜邦电子材料国际有限责任公司 2026-05-22 CN disclosed
CN-122072436-A Negative photosensitive resin composition, cured film, and resist film DIC株式会社 2026-05-22 CN disclosed
US-20260140448-A1 UNDERLAYER COMPOSITION FOR USE IN MANUFACTURING ELECTRONIC DEVICES DUPONT ELECTRONIC MAT INTERNATIONAL LLC (US) 2026-05-21 US disclosed
CN-122037094-A Block copolymer having cleavable main chain, photoresist composition comprising the same, and pattern forming method 杜邦电子材料国际有限责任公司 2026-05-15 CN disclosed
US-20260132241-A1 MAIN CHAIN SCISSIONABLE BLOCK COPOLYMERS, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS DUPONT ELECTRONIC MAT INTERNATIONAL LLC (US) 2026-05-14 US disclosed
US-20260118761-A1 COMPOUND FOR PHOTOLITHOGRAPHIC MEDIUM COMPOSITION, POLYMER, AND PHOTOLITHOGRAPHIC MEDIUM COMPOSITION Tan Kah Kee Innovation Laboratory (CN) 2026-04-30 US disclosed
US-20260118762-A1 POLYMER FOR PHOTOLITHOGRAPHIC MEDIUM COMPOSITION, AND PHOTOLITHOGRAPHIC MEDIUM COMPOSITION Tan Kah Kee Innovation Laboratory (CN) 2026-04-30 US disclosed
US-20260093178-A1 POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-04-02 US disclosed
US-20260093176-A1 ELECTROACTIVE COMPOUNDS, COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS DUPONT ELECTRONIC MAT INTERNATIONAL LLC (US) 2026-04-02 US disclosed
US-12583973-B2 Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-03-24 US disclosed
US-20260079399-A1 POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PATTERNS DUPONT ELECTRONIC MAT INTERNATIONAL LLC (US) 2026-03-19 US disclosed
US-20260079398-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS DUPONT ELECTRONIC MAT INTERNATIONAL LLC (US) 2026-03-19 US disclosed
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-08 US disclosed
EP-4675357-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-01-07 EP disclosed
EP-4667537-A1 PRIMER COMPOSITION, LAMINATE, AND METHOD FOR PRODUCING LAMINATE TOKYO OHKA KOGYO CO., LTD. (JP) 2025-12-24 EP disclosed
US-20250382500-A1 PRIMER COMPOSITION, LAMINATE, AND METHOD FOR PRODUCING LAMINATE TOKYO OHKA KOGYO CO LTD (JP) 2025-12-18 US disclosed
EP-4664197-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-17 EP disclosed
US-12493241-B2 Photoacid generators, photoresist compositions, and pattern formation methods DUPONT ELECTRONIC MAT INTERNATIONAL LLC (US) 2025-12-09 US disclosed
US-20250336673-A1 METHODS FOR SUBSTRATE PATTERNING PROCESS TOKYO ELECTRON LTD (JP) 2025-10-30 US disclosed
US-12448485-B2 Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-10-21 US disclosed
US-20250298315-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-25 US disclosed
EP-4617775-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, PATTERN FORMING METHOD, AND LIGHT-EMITTING ELEMENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-17 EP disclosed
EP-3593390-B1 FILM ELECTRODE, RESIN LAYER FORMING INK AND ELECTRODE PRINTING METHOD RICOH CO LTD (JP) 2025-09-17 EP disclosed
US-20250271751-A1 PHOTOSENSITIVE COMPOSITION, PHOTOSENSITIVE FILM, LOWER LAYER FILM, METHOD FOR PRODUCING STRUCTURE HAVING PHASE-SEPARATED STRUCTURE, AND COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2025-08-28 US disclosed
EP-4600743-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN MEMBRANE, PHOTOSENSITIVE DRY FILM, PATTERN FORMATION METHOD, AND LIGHT-EMITTING ELEMENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-08-13 EP disclosed
EP-4600741-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, PATTERN FORMING METHOD, AND LIGHT-EMITTING ELEMENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-08-13 EP disclosed
US-12386261-B2 In-resist process for high density contact formation GEMINATIO, INC. (US) 2025-08-12 US disclosed
US-20250251665-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-08-07 US disclosed
US-20250237952-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-24 US disclosed
US-20250231488-A1 ANTI-REFLECTIVE COATING COMPOSITION Tan Kah Kee Innovation Laboratory (CN) 2025-07-17 US disclosed
US-20250216783-A1 ANTI-SPACER MASKING PROCESS USING SECOND SWITCHABLE POLYMER TOKYO ELECTRON LTD (JP) 2025-07-03 US disclosed
US-20250216790-A1 MATERIALS AND METHODS FOR FORMING PATTERNED MASK ON SUBSTRATE GEMINATIO, INC., 2025-07-03 US disclosed
US-20250216782-A1 MASKING PROCESS USING SWITCHABLE POLYMER TOKYO ELECTRON LTD (JP) 2025-07-03 US disclosed
US-20250216763-A1 ANTI-SPACER MASKING PROCESS USING RESIST LAYER WITH SOLUBILITY SHIFTING AGENT TOKYO ELECTRON LTD (JP) 2025-07-03 US disclosed
US-20250216784-A1 IN-RESIST PROCESS FOR HIGH DENSITY CONTACT FORMATION GEMINATIO, INC. (US) 2025-07-03 US disclosed
US-20250218775-A1 MATERIALS AND METHODS FOR FORMING PATTERNED MASK ON SUBSTRATE GEMINATIO, INC. 2025-07-03 US disclosed
CN-120202438-A Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, pattern forming method and light emitting element 信越化学工业株式会社 2025-06-24 CN disclosed
EP-4567936-A2 FILM ELECTRODE, RESIN LAYER FORMING INK AND ELECTRODE PRINTING METHOD Ricoh Company, Ltd. (JP) 2025-06-11 EP disclosed
CN-120092212-A Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, pattern forming method and light emitting element 信越化学工业株式会社 2025-06-03 CN disclosed
US-12313971-B2 Coated underlayer for overcoated photoresist DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC (US) 2025-05-27 US disclosed
WO-2025106697-A1 BIO-BASED COMPOSITIONS FOR PHOTORESISTS AND PATTERNING HUSTAD PHILLIP DENE (US) 2025-05-22 WO disclosed
CN-120019329-A Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, pattern forming method and light emitting element 信越化学工业株式会社 2025-05-16 CN disclosed
US-20250155812-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN-FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-05-15 US disclosed
EP-4553100-A1 POLYMER, POSITIVE AND NEGATIVE PHOTOSENSITIVE RESIN COMPOSITIONS, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-05-14 EP disclosed
CN-119987132-A Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film and pattern forming method 信越化学工业株式会社 2025-05-13 CN disclosed
CN-119955091-A Polymer, positive-type negative-type photosensitive resin composition, pattern forming method, cured film forming method, interlayer insulating film, surface protective film, and electronic component 信越化学工业株式会社 2025-05-09 CN disclosed
US-20250147420-A1 Polymer, Positive And Negative Photosensitive Resin Compositions, Patterning Process, Method For Forming Cured Film, Interlayer Insulating Film, Surface Protective Film, And Electronic Component SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-05-08 US disclosed
US-20250130501-A1 ENHANCED FIELD STITCHING WITH CORRECTIVE CHEMISTRY GEMINATIO, INC. (US) 2025-04-24 US disclosed
US-20250132166-A1 GENERATION OF MULTILINE ETCH SUBSTRATES GEMINATIO, INC. (US) 2025-04-24 US disclosed
US-20250132207-A1 OPTIMIZATION FOR LOCAL CHEMICAL EXPOSURE GEMINATIO, INC. (US) 2025-04-24 US disclosed
US-20250132156-A1 NARROW LINE CUT MASKING PROCESS GEMINATIO, INC. (US) 2025-04-24 US disclosed
US-12282254-B2 Photoresist compositions and pattern formation methods DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC (US) 2025-04-22 US disclosed
US-12276910-B2 Photoresist compositions and pattern formation methods DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC (US) 2025-04-15 US disclosed
US-20250116927-A1 PHOTOACID GENERATORS, PHOTORESIST COMPOSITIONS, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2025-04-10 US disclosed
US-20250116933-A1 MULTIBLOCK COPOLYMERS, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2025-04-10 US disclosed
CN-119775514-A Multiblock copolymer, photoresist composition comprising the same, and pattern forming method 杜邦电子材料国际有限责任公司 2025-04-08 CN disclosed
CN-119775113-A UV absorbing compounds and photoresist compositions containing the same 湖北鼎龙芯盛科技有限公司 2025-04-08 CN disclosed
CN-119575759-A Positive photosensitive resin composition, photosensitive film, resist underlayer film, resist permanent film, and method for producing film DIC株式会社 2025-03-07 CN disclosed
US-12242193-B2 Coating compositions for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2025-03-04 US disclosed
US-20250068070-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING METHOD, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATIVE FILM, SURFACE-PROTECTIVE FILM, AND ELECTRONIC COMPONENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-02-27 US disclosed
US-20250068064-A1 ANTI-SPACER BASED SELF-ALIGNED HIGH ORDER PATTERNING GEMINATIO, INC. (US) 2025-02-27 US disclosed
US-12234369-B2 Photoresist topcoat compositions and methods of processing photoresist compositions DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC (US) 2025-02-25 US disclosed
WO-2025038912-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC (US) 2025-02-20 WO disclosed
WO-2025038907-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC (US) 2025-02-20 WO disclosed
US-12228859-B2 Pattern formation methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2025-02-18 US disclosed
CN-119439625-A Negative photosensitive resin composition, pattern forming method, cured coating film forming method, interlayer insulating film, surface protective film, and electronic component 信越化学工业株式会社 2025-02-14 CN disclosed
CN-111198480-B Photosensitive resin composition, pattern forming method and antireflection film 信越化学工业株式会社 2025-02-11 CN disclosed
EP-4502729-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING METHOD, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATIVE FILM, SURFACE-PROTECTIVE FILM, AND ELECTRONIC COMPONENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-02-05 EP disclosed
US-12216405-B2 Photosensitive resin composition, photosensitive resin film, photosensitive dry film, patterning process, and light emitting device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-02-04 US disclosed
CN-119225117-A Photoresist composition and pattern forming method 罗门哈斯电子材料有限责任公司 2024-12-31 CN disclosed
CN-110727175-B Photosensitive resin composition and pattern forming method 信越化学工业株式会社 2024-12-24 CN disclosed
WO-2024254923-A1 POLYMER FOR PHOTOETCHING MEDIUM COMPOSITION, AND PHOTOETCHING MEDIUM COMPOSITION 嘉庚创新实验室 2024-12-19 WO disclosed
US-20240419079-A1 CHEMICALLY SELECTIVE ADHESION AND STRENGTH PROMOTERS IN SEMICONDUCTOR PATTERNING GEMINATIO, INC. (US) 2024-12-19 US disclosed
US-20240393689-A1 COMPOUNDS, MONOMERS, POLYMERS, PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-11-28 US disclosed
CN-119019256-A Compound, monomer, polymer, photoresist composition and pattern forming method 杜邦电子材料国际有限责任公司 2024-11-26 CN disclosed
US-20240377744-A1 LOCAL SHADOW MASKING FOR MULTI-COLOR EXPOSURES GEMINATIO, INC. (US) 2024-11-14 US disclosed
US-20240377749-A1 ASSISTED FEATURE PLACEMENT IN SEMICONDUCTOR PATTERNING GEMINATIO, INC. (US) 2024-11-14 US disclosed
US-12140866-B2 Photoacid generators, photoresist compositions, and pattern formation methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2024-11-12 US disclosed
CN-118900866-A Curable resin composition 太阳控股株式会社 2024-11-05 CN disclosed
CN-111142332-B Photosensitive resin composition and photosensitive dry film 信越化学工业株式会社 2024-10-29 CN disclosed
US-20240345481-A1 SILPHENYLENE-SKELETON-CONTAINING POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-10-17 US disclosed
CN-113311661-B Photoresist underlayer composition and method for manufacturing semiconductor device 台湾积体电路制造股份有限公司 2024-10-15 CN disclosed
CN-111033381-B With overcoated photoresist coating composition for use together 罗门哈斯电子材料韩国有限公司 2024-10-11 CN disclosed
CN-110297398-B Photosensitive resin composition, photosensitive resin laminate, and pattern forming method 信越化学工业株式会社 2024-10-08 CN disclosed
CN-109976091-B Photosensitive resin composition, pattern forming method, and manufacture of optoelectronic semiconductor device 信越化学工业株式会社 2024-09-27 CN disclosed
CN-118666718-A 1,2, 3-Trimethylsulfonyloxybenzene, preparation method and application 先微康新材料科技有限公司 2024-09-20 CN disclosed
CN-118666718-A 1,2, 3-Trimethylsulfonyloxybenzene, preparation method and application 先微康新材料科技有限公司 2024-09-20 CN disclosed
CN-118666718-A 1,2, 3-Trimethylsulfonyloxybenzene, preparation method and application 先微康新材料科技有限公司 2024-09-20 CN disclosed
WO-2024187508-A1 COMPOUND FOR PHOTOLITHOGRAPHIC DIELECTRIC COMPOSITION, POLYMER, AND PHOTOLITHOGRAPHIC DIELECTRIC COMPOSITION 嘉庚创新实验室 2024-09-19 WO disclosed
US-12085854-B2 Photoresist compositions and pattern formation methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2024-09-10 US disclosed
US-20240294771-A1 ANTI-REFLECTIVE COATING COMPOSITION AND CROSSLINKABLE POLYMER Tan Kah Kee Innovation Laboratory (CN) 2024-09-05 US disclosed
EP-4421563-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD Shin-Etsu Chemical Co., Ltd. (JP) 2024-08-28 EP disclosed
WO-2024166559-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD 信越化学工業株式会社 2024-08-15 WO disclosed
US-12055853-B2 Photosensitive resin composition, laminate, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-08-06 US disclosed
CN-113121734-B Polymer and photoresist composition 罗门哈斯电子材料有限责任公司 2024-07-30 CN disclosed
US-20240241440-A1 POLYMER, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-07-18 US disclosed
US-20240241441-A1 POLYMER, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-07-18 US disclosed
CN-110515270-B Photosensitive resin composition, pattern forming method, and method for manufacturing optical semiconductor device 信越化学工业株式会社 2024-07-12 CN disclosed
US-20240218103-A1 CURABLE COMPOSITION AND FILM PREPARED THEREFROM DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2024-07-04 US disclosed
CN-115044040-B Polyimide-containing polymer, positive photosensitive resin composition, negative photosensitive resin composition, and pattern forming method 信越化学工业株式会社 2024-07-02 CN disclosed
CN-118271508-A Polymer, photoresist composition comprising the same, and pattern forming method 罗门哈斯电子材料有限责任公司 2024-07-02 CN disclosed
CN-118255930-A Polymer, photoresist composition comprising the same, and pattern forming method 罗门哈斯电子材料有限责任公司 2024-06-28 CN disclosed
US-20240210832-A1 PHOTORESIST TOPCOAT COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION SAMSUNG ELECTRONICS CO., LTD. (KR) 2024-06-27 US disclosed
US-20240210831-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-06-27 US disclosed
CN-118244576-A Photosensitive resin composition and cured film thereof 罗门哈斯电子材料韩国有限公司 2024-06-25 CN disclosed
CN-118240154-A Curable composition and film made therefrom 罗门哈斯电子材料韩国有限公司 2024-06-25 CN disclosed
US-20240199854-A1 COMPOSITION, CURED FILM, STRUCTURAL BODY, OPTICAL FILTER, SOLID-STATE IMAGING ELEMENT, IMAGE DISPLAY DEVICE, AND MANUFACTURING METHOD OF CURED FILM FUJIFLIM CORPORATION (JP) 2024-06-20 US disclosed
EP-4386037-A1 SILPHENYLENE-SKELETON-CONTAINING POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-06-19 EP disclosed
CN-118215986-A Chemoselective adhesion and strength promoters in semiconductor patterning 杰米纳蒂奥公司 2024-06-18 CN disclosed
US-20240184206-A1 LAMINATE, METHOD FOR MANUFACTURING LAMINATE, AND METHOD FOR PATTERNING SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-06-06 US disclosed
US-20240184201-A1 POLYMER, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-06-06 US disclosed
CN-118140295-A Partial shadow mask for multicolor exposure 杰米纳蒂奥公司 2024-06-04 CN disclosed
CN-118103774-A Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, and pattern forming method 信越化学工业株式会社 2024-05-28 CN disclosed
CN-110658678-B Photoresist top coat composition and method for processing photoresist composition 罗门哈斯电子材料有限责任公司 2024-05-17 CN disclosed
WO-2024101182-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, PATTERN FORMING METHOD, AND LIGHT-EMITTING ELEMENT 信越化学工業株式会社 2024-05-16 WO disclosed
CN-118027269-A Polymer, photoresist composition comprising the same, and pattern forming method 罗门哈斯电子材料有限责任公司 2024-05-14 CN disclosed
CN-113348188-B Phenolic hydroxyl group-containing resin, photosensitive composition, resist film, curable composition, and cured product DIC株式会社 2024-05-10 CN disclosed
CN-118011733-A Positive photosensitive resin composition, resist film, resist underlayer film, and resist permanent film DIC株式会社 2024-05-10 CN disclosed
US-20240152047-A1 HIGH REFRACTIVE INDEX MATERIALS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-05-09 US disclosed
EP-4365679-A1 LAYERED BODY, METHOD FOR MANUFACTURING LAYERED BODY, AND METHOD FOR FORMING PATTERN SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-05-08 EP disclosed
CN-117941029-A Self-aligned high-order patterning based on anti-spacer 杰米纳蒂奥公司 2024-04-26 CN disclosed
CN-113527101-B Novel compound, polymer, process for producing the same, photosensitive resin composition, pattern forming process, cured film, and electronic component 信越化学工业株式会社 2024-04-23 CN disclosed
CN-117916851-A Enhanced field stitching with corrective chemistry 杰米纳蒂奥公司 2024-04-19 CN disclosed
CN-117916854-A Narrow line cutting mask method 杰米纳蒂奥公司 2024-04-19 CN disclosed
CN-117916852-A Assist feature placement in semiconductor patterning 杰米纳蒂奥公司 2024-04-19 CN disclosed
CN-117916853-A Formation of a multi-line etched substrate 杰米纳蒂奥公司 2024-04-19 CN disclosed
CN-117916855-A In-resist process for forming high density contacts 杰米纳蒂奥公司 2024-04-19 CN disclosed
CN-117916668-A Optimization for localized chemical exposure 杰米纳蒂奥公司 2024-04-19 CN disclosed
CN-116813852-B Compounds, polymers and lithographic medium compositions for use in lithographic medium compositions 嘉庚创新实验室 2024-04-19 CN disclosed
CN-117866195-A High refractive index material 罗门哈斯电子材料有限责任公司 2024-04-12 CN disclosed
WO-2024075581-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, PATTERN FORMING METHOD, AND LIGHT-EMITTING ELEMENT 信越化学工業株式会社 2024-04-11 WO disclosed
WO-2024075585-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN MEMBRANE, PHOTOSENSITIVE DRY FILM, PATTERN FORMATION METHOD, AND LIGHT-EMITTING ELEMENT 信越化学工業株式会社 2024-04-11 WO disclosed
EP-3656803-B1 POLYSILOXANE SKELETON POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING PROCESS, AND FABRICATION OF OPTO-SEMICONDUCTOR DEVICE SHINETSU CHEMICAL CO (JP) 2024-04-10 EP disclosed
WO-2024070845-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN SHEET, CURED PRODUCT, CURED PRODUCT PRODUCTION METHOD, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND RESIN PRODUCTION METHOD 東レ株式会社 2024-04-04 WO disclosed
US-11947258-B2 Photoacid-generating monomer, polymer derived therefrom, photoresist composition including the polymer, and method of forming a photoresist relief image using the photoresist composition Rohm and Hass Electronic Materials LLC (US) 2024-04-02 US disclosed
CN-116554444-B Polymer for lithographic medium composition and lithographic medium composition 嘉庚创新实验室 2024-03-29 CN disclosed
CN-117794985-A Polymer containing silicon phenylene skeleton, photosensitive resin composition, pattern forming method, and method for producing optical semiconductor element 信越化学工业株式会社 2024-03-29 CN disclosed
US-11940731-B2 Photoresist topcoat compositions and methods of processing photoresist compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2024-03-26 US disclosed
EP-3263626-B1 SILICONE SKELETON-CONTAINING POLYMER, PHOTO-CURABLE RESIN COMPOSITION, PHOTO-CURABLE DRY FILM, LAMINATE, AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2024-03-13 EP disclosed
CN-111381447-B Photosensitive resin composition, laminate, and pattern forming method 信越化学工业株式会社 2024-03-08 CN disclosed
WO-2024036679-A1 ANTI-REFLECTIVE COATING COMPOSITION 嘉庚创新实验室 2024-02-22 WO disclosed
US-11909031-B2 Film electrode, resin layer forming ink, inorganic layer forming ink, and electrode printing apparatus RICOH COMPANY, LTD. (JP) 2024-02-20 US disclosed
EP-4321553-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-14 EP disclosed
US-11892773-B2 Photosensitive resin composition, patterning process, method for forming cured film, interlayer insulation film, surface protective film, and electronic component SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-06 US disclosed
US-20240027905-A1 PHOTOACID GENERATORS, PHOTORESIST COMPOSITIONS, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-01-25 US disclosed
US-20240027904-A1 PHOTOACTIVE COMPOUNDS, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-01-25 US disclosed
CN-117417367-A Photoacid generator, photoresist composition, and pattern forming method 罗门哈斯电子材料有限责任公司 2024-01-19 CN disclosed
US-20240019779-A1 COMPOUNDS AND PHOTORESIST COMPOSITIONS INCLUDING THE SAME U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-01-18 US disclosed
CN-117402126-A Photoactive compound, photoresist composition comprising the same, and pattern forming method 罗门哈斯电子材料有限责任公司 2024-01-16 CN disclosed
US-11874603-B2 Photoresist composition comprising amide compound and pattern formation methods using the same ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2024-01-16 US disclosed
US-20230418161-A1 COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2023-12-28 US disclosed
WO-2023248887-A1 POSITIVE TYPE PHOTOSENSITIVE RESIN COMPOSITION, POSITIVE TYPE PHOTOSENSITIVE RESIN SHEET, CURED PRODUCT, CURED PRODUCT MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE 東レ株式会社 2023-12-28 WO disclosed
US-11852972-B2 Photoresist compositions and pattern formation methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2023-12-26 US disclosed
CN-109388023-B Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, laminate, and pattern forming method 信越化学工业株式会社 2023-12-22 CN disclosed
CN-112661877-B Polymer and photoresist composition 罗门哈斯电子材料有限责任公司 2023-12-22 CN disclosed
US-11846885-B2 Topcoat compositions and photolithographic methods ROHM AND HAAS ELECTRONIC MATERIALS, LLC (US) 2023-12-19 US disclosed
EP-3640289-B1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2023-12-06 EP disclosed
EP-3441818-B1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, LAMINATE, AND PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2023-12-06 EP disclosed
US-11829069-B2 Photoresist compositions and methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2023-11-28 US disclosed
CN-117120927-A Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, and pattern forming method 信越化学工业株式会社 2023-11-24 CN disclosed
US-11822248-B2 Coating compositions for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2023-11-21 US disclosed
CN-117088795-A Compound and photoresist composition comprising the same 罗门哈斯电子材料有限责任公司 2023-11-21 CN disclosed
CN-117075428-A Negative photosensitive resin composition DIC株式会社 2023-11-17 CN disclosed
EP-4273624-A1 NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, INTERLAYER INSULATING FILM, SURFACE PROTECTION FILM, AND ELECTRONIC COMPONENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-08 EP disclosed
US-11809077-B2 Photoresist compositions and pattern formation methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2023-11-07 US disclosed
CN-116991034-A Negative photosensitive resin composition, pattern forming method, interlayer insulating film, surface protective film, and electronic component 信越化学工业株式会社 2023-11-03 CN disclosed
US-20230350294-A1 Negative Photosensitive Resin Composition, Patterning Process, Interlayer Insulating Film, Surface Protection Film, And Electronic Component SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-02 US disclosed
EP-3597704-B1 PHOTOSENSITIVE RESIN COMPOSITION AND PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2023-10-25 EP disclosed
EP-3896114-B1 POLYIMIDE RESIN AND METHOD OF PRODUCING THE SAME, PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING METHOD AND METHOD OF FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT SHINETSU CHEMICAL CO (JP) 2023-10-18 EP disclosed
CN-116891409-A Photoactive compound, photoresist composition comprising the same, and pattern forming method 罗门哈斯电子材料有限责任公司 2023-10-17 CN disclosed
WO-2023028249-A9 ASSISTED FEATURE PLACEMENT IN SEMICONDUCTOR PATTERNING GEMINATIO, INC. (US) 2023-10-12 WO disclosed
EP-3597694-B1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, AND BLACK MATRIX SHINETSU CHEMICAL CO (JP) 2023-10-11 EP disclosed
CN-116859669-A Photoresist topcoat composition and method of treating photoresist composition 罗门哈斯电子材料有限责任公司 2023-10-10 CN disclosed
US-20230314934-A1 PHOTOACTIVE COMPOUNDS, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-10-05 US disclosed
CN-116813852-A Compounds, polymers and lithographic medium compositions for use in lithographic medium compositions 嘉庚创新实验室 2023-09-29 CN disclosed
WO-2023182495-A1 CURABLE RESIN COMPOSITION 太陽ホールディングス株式会社 2023-09-28 WO disclosed
EP-3398983-B1 POLYMER OF POLYIMIDE PRECURSOR, POSITIVE TYPE PHOTOSENSITIVE RESIN COMPOSITION, NEGATIVE TYPE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC PARTS SHINETSU CHEMICAL CO (JP) 2023-09-27 EP disclosed
EP-3382453-B1 RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM SHINETSU CHEMICAL CO (JP) 2023-09-20 EP disclosed
US-11762292-B2 Coating compositions for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2023-09-19 US disclosed
US-20230287179-A1 HIGHLY SOLUBLE TRIS-(2,3-EPOXYPROPYL)-ISOCYANURATE AND METHOD FOR PRODUCING SAME NISSAN CHEMICAL CORPORATION (JP) 2023-09-14 US disclosed
EP-3266759-B1 COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING COMPOUND OR RESIN MITSUBISHI GAS CHEMICAL CO (JP) 2023-09-13 EP disclosed
CN-116723721-A Light emitting device, method of manufacturing the same, and electronic apparatus 三星显示有限公司 2023-09-08 CN disclosed
CN-116723717-A Light emitting device, method of manufacturing the same, and electronic apparatus 三星显示有限公司 2023-09-08 CN disclosed
US-20230284471-A1 LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME SAMSUNG DISPLAY CO., LTD. (KR) 2023-09-07 US disclosed
US-20230284522-A1 LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS INCLUDING LIGHT-EMITTING DEVICE SAMSUNG DISPLAY CO., LTD. (KR) 2023-09-07 US disclosed
EP-4056627-B1 POLYIMIDE-BASED POLYMER, POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, NEGATIVE PHOTOSENSITIVE RESIN COMPOSTION, PATTERNING METHOD, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT SHINETSU CHEMICAL CO (JP) 2023-08-23 EP disclosed
CN-116554444-A Polymer for lithographic medium composition and lithographic medium composition 嘉庚创新实验室 2023-08-08 CN disclosed
CN-109388022-B Silicone-structure-containing polymer, photosensitive resin composition, photosensitive resin coating layer, photosensitive dry film, laminate, and pattern forming method 信越化学工业株式会社 2023-07-28 CN disclosed
US-20230213862-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-07-06 US disclosed
US-20230212112-A1 PHOTOACID-GENERATING MONOMER, POLYMER DERIVED THEREFROM, PHOTORESIST COMPOSITION INCLUDING THE POLYMER, AND METHOD OF FORMING A PHOTORESIST RELIEF IMAGE USING THE PHOTORESIST COMPOSITION U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-07-06 US disclosed
US-11693317-B2 Photosensitive resin composition, pattern forming process, and fabrication of opto-semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-04 US disclosed
US-11693318-B2 Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, and black matrix SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-07-04 US disclosed
CN-116382031-A Photoresist composition and pattern forming method 罗门哈斯电子材料有限责任公司 2023-07-04 CN disclosed
CN-110959138-B Resist material DIC株式会社 2023-06-30 CN disclosed
CN-116360212-A Photoresist underlayer composition 罗门哈斯电子材料韩国有限公司 2023-06-30 CN disclosed
US-20230202221-A1 THERMAL TRANSFER SHEET, DISCOLORED OR DECOLORIZED PRINTED MATERIAL, AND METHOD FOR PRODUCING DISCOLORED OR DECOLORIZED PRINTED MATERIAL DAI NIPPON PRINTING CO., LTD. (JP) 2023-06-29 US disclosed
US-20230205087-A1 PHOTORESIST UNDERLAYER COMPOSITION DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2023-06-29 US disclosed
CN-116300309-A Photoresist underlayer composition 罗门哈斯电子材料有限责任公司 2023-06-23 CN disclosed
US-20230194990-A1 PHOTORESIST UNDERLAYER COMPOSITION U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-06-22 US disclosed
WO-2023076224-A9 CHEMICALLY SELECTIVE ADHESION AND STRENGTH PROMOTORS IN SEMICONDUCTOR PATTERNING GEMINATIO, INC. (US) 2023-06-15 WO disclosed
US-20230161257-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-05-25 US disclosed
US-11644745-B2 Photolithography method SAMSUNG ELECTRONICS CO., LTD. (KR) 2023-05-09 US disclosed
WO-2023076224-A1 CHEMICALLY SELECTIVE ADHESION AND STRENGTH PROMOTORS IN SEMICONDUCTOR PATTERNING GEMINATIO, INC. (US) 2023-05-04 WO disclosed
WO-2023070957-A1 ANTI-REFLECTIVE COATING COMPOSITION AND CROSSLINKABLE POLYMER 嘉庚创新实验室 2023-05-04 WO disclosed
WO-2023076222-A1 LOCAL SHADOW MASKING FOR MULTI-COLOR EXPOSURES GEMINATIO INC. (US) 2023-05-04 WO disclosed
CN-113527680-B Polymer, photosensitive resin composition, pattern forming method, cured film, and electronic component 信越化学工业株式会社 2023-04-28 CN disclosed
US-20230127914-A1 RESIST PATTERN FORMATION METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2023-04-27 US disclosed
WO-2023068177-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD 信越化学工業株式会社 2023-04-27 WO disclosed
EP-3572879-B1 PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING PROCESS, AND FABRICATION OF OPTO-SEMICONDUCTOR DEVICE SHINETSU CHEMICAL CO (JP) 2023-04-19 EP disclosed
CN-115403976-B Anti-reflection coating composition 嘉庚创新实验室 2023-04-18 CN disclosed
US-20230103685-A1 IODINE-CONTAINING ACID CLEAVABLE COMPOUNDS, POLYMERS DERIVED THEREFROM, AND PHOTORESIST COMPOSITIONS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-04-06 US disclosed
US-20230104130-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-04-06 US disclosed
US-20230103371-A1 PHOTORESIST UNDERLAYER COMPOSITION U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-04-06 US disclosed
US-20230104679-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-04-06 US disclosed
CN-115903379-A Photoresist composition and pattern forming method 罗门哈斯电子材料有限责任公司 2023-04-04 CN disclosed
CN-115894243-A Iodine-containing acid-cleavable compounds, polymers derived therefrom and photoresist compositions 罗门哈斯电子材料有限责任公司 2023-04-04 CN disclosed
CN-115903382-A Photoresist composition and pattern forming method 罗门哈斯电子材料有限责任公司 2023-04-04 CN disclosed
CN-115894781-A Photoresist composition and pattern forming method 罗门哈斯电子材料有限责任公司 2023-04-04 CN disclosed
CN-115877656-A Photoresist underlayer composition 罗门哈斯电子材料有限责任公司 2023-03-31 CN disclosed
US-20230099348-A1 PHOTORESIST COMPOSITION COMPRISING AMIDE COMPOUND AND PATTERN FORMATION METHODS USING THE SAME DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2023-03-30 US disclosed
US-11613519-B2 Photoacid-generating monomer, polymer derived therefrom, photoresist composition including the polymer, and method of forming a photoresist relief image using the photoresist composition ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2023-03-28 US disclosed
CN-111234236-B Siloxane polymer containing isocyanuric acid and polyether skeleton, photosensitive resin composition, and pattern formation method 信越化学工业株式会社 2023-03-24 CN disclosed
US-20230091130-A1 FILM ELECTRODE, RESIN LAYER FORMING INK, INORGANIC LAYER FORMING INK, AND ELECTRODE PRINTING APPARATUS RICOH COMPANY, LTD. (JP) 2023-03-23 US disclosed
CN-115808844-A Photoresist composition comprising amide compound and pattern forming method using the same 罗门哈斯电子材料韩国有限公司 2023-03-17 CN disclosed
US-20230076103-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-03-09 US disclosed
WO-2023032746-A1 COMPOSITION, CURED FILM, STRUCTURE, OPTICAL FILTER, SOLID-STATE IMAGING ELEMENT, IMAGE DISPLAY DEVICE, AND METHOD FOR PRODUCING CURED FILM 富士フイルム株式会社 2023-03-09 WO disclosed
WO-2023028244-A1 GENERATION OF MULTILINE ETCH SUBSTRATES GEMINATIO, INC. (US) 2023-03-02 WO disclosed
WO-2023028249-A1 ASSISTED FEATURE PLACEMENT IN SEMICONDUCTOR PATTERNING GEMINATIO, INC. (US) 2023-03-02 WO disclosed
WO-2023028259-A1 ENHANCED FIELD STITCHING WITH CORRECTIVE CHEMISTRY GEMINATIO, INC. (US) 2023-03-02 WO disclosed
WO-2023028236-A1 IN-RESIST PROCESS FOR HIGH DENSITY CONTACT FORMATION GEMINATIO, INC. (US) 2023-03-02 WO disclosed
WO-2023028246-A1 ANTI-SPACER BASED SELF-ALIGNED HIGH ORDER PATTERNING GEMINATIO, INC. (US) 2023-03-02 WO disclosed
WO-2023028243-A1 NARROW LINE CUT MASKING PROCESS GEMINATIO, INC. (US) 2023-03-02 WO disclosed
WO-2023028223-A1 OPTIMIZATION FOR LOCAL CHEMICAL EXPOSURE GEMINATIO, INC. (US) 2023-03-02 WO disclosed
CN-110520475-B Curable resin composition, dry film, cured product, electronic component, and printed wiring board 太阳控股株式会社 2023-02-28 CN disclosed
US-20230057401-A1 COATED UNDERLAYER FOR OVERCOATED PHOTORESIST U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-02-23 US disclosed
US-11588147-B2 Film electrode, resin layer forming ink, inorganic layer forming ink, and electrode printing apparatus RICOH COMPANY, LTD. (JP) 2023-02-21 US disclosed
WO-2023017666-A1 SILPHENYLENE-SKELETON-CONTAINING POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE 信越化学工業株式会社 2023-02-16 WO disclosed
CN-111205463-B Polysiloxane skeleton polymer, photosensitive resin composition, pattern forming method and manufacturing of optical semiconductor device 信越化学工业株式会社 2023-02-14 CN disclosed
EP-3505551-B1 PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING PROCESS, AND FABRICATION OF OPTO-SEMICONDUCTOR DEVICE SHINETSU CHEMICAL CO (JP) 2023-02-08 EP disclosed
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-02-07 US disclosed
US-11572442-B2 Compound, polyimide resin and method of producing the same, photosensitive resin composition, patterning method and method of forming cured film, interlayer insulating film, surface protective film, and electronic component INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2023-02-07 US disclosed
US-20230030194-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, PATTERNING PROCESS, AND LIGHT EMITTING DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-02-02 US disclosed
CN-108388082-B Photosensitive resin composition, photosensitive dry film, photosensitive resin coating and pattern forming method 信越化学工业株式会社(JP) 2023-01-13 CN disclosed
US-11548985-B2 Siloxane polymer containing isocyanuric acid and polyether skeletons, photosensitive resin composition, pattern forming process, and fabrication of opto-semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-01-10 US disclosed
CN-115584177-A Coated underlayer of overcoated photoresist 罗门哈斯电子材料有限责任公司 2023-01-10 CN disclosed
WO-2023276578-A1 LAYERED BODY, METHOD FOR MANUFACTURING LAYERED BODY, AND METHOD FOR FORMING PATTERN 信越化学工業株式会社 2023-01-05 WO disclosed
US-20230002313-A1 LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF SAMSUNG DISPLAY CO., LTD. (KR) 2023-01-05 US disclosed
CN-115480447-A Negative photosensitive resin composition DIC株式会社 2022-12-16 CN disclosed
EP-3896521-B1 POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING METHOD, METHOD OF FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT SHINETSU CHEMICAL CO (JP) 2022-12-14 EP disclosed
US-11526078-B2 Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, laminate, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-12-13 US disclosed
US-11518876-B2 Photosensitive resin composition and photosensitive dry film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-12-06 US disclosed
EP-4095178-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, PATTERN FORMATION METHOD Shin-Etsu Chemical Co., Ltd. (JP) 2022-11-30 EP disclosed
CN-115403976-A Anti-reflection coating composition 嘉庚创新实验室 2022-11-29 CN disclosed
US-11500291-B2 Underlying coating compositions for use with photoresists ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2022-11-15 US disclosed
US-11493845-B2 Organic bottom antireflective coating composition for nanolithography ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2022-11-08 US disclosed
CN-109725493-B Primer composition for use with photoresists 罗门哈斯电子材料韩国有限公司 2022-11-08 CN disclosed
US-11487203-B2 Monomers, polymers and photoresist compositions ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2022-11-01 US disclosed
US-11487204-B2 Resist material DIC CORPORATION (JP) 2022-11-01 US disclosed
US-11480878-B2 Monomers, polymers and photoresist compositions ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2022-10-25 US disclosed
WO-2022215403-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD 信越化学工業株式会社 2022-10-13 WO disclosed
EP-4071200-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, PATTERN FORMING METHOD, AND LIGHT EMITTING ELEMENT Shin-Etsu Chemical Co., Ltd. (JP) 2022-10-12 EP disclosed
CN-109991809-B Photoresist composition and method 罗门哈斯电子材料有限责任公司 2022-10-11 CN disclosed
US-11448964-B2 Coating compositions for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2022-09-20 US disclosed
CN-113913075-B Anti-reflective coating composition and crosslinkable polymer 嘉庚创新实验室 2022-09-20 CN disclosed
CN-115058175-A Coating compositions for use with overcoated photoresists 罗门哈斯电子材料有限责任公司 2022-09-16 CN disclosed
US-20220289911-A1 POLYIMIDE-BASED POLYMER, POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING METHOD, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-09-15 US disclosed
EP-4056627-A1 POLYIMIDE-BASED POLYMER, POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, NEGATIVE PHOTOSENSITIVE RESIN COMPOSTION, PATTERNING METHOD, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT Shin-Etsu Chemical Co., Ltd. (JP) 2022-09-14 EP disclosed
CN-115044040-A Polyimide-containing polymer, positive photosensitive resin composition, negative photosensitive resin composition, and pattern formation method 信越化学工业株式会社 2022-09-13 CN disclosed
CN-115023653-A Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, and pattern formation method 信越化学工业株式会社 2022-09-06 CN disclosed
CN-109725492-B Underlayer coating composition for use with photoresists 罗门哈斯电子材料韩国有限公司 2022-09-02 CN disclosed
US-11402756-B2 Silicone structure-containing polymer, photosensitive resin composition, photosensitive resin coating, photosensitive dry film, laminate, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-08-02 US disclosed
US-20220236644-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, LAYERED PRODUCT, AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-07-28 US disclosed
CN-105739236-B Coating compositions for use with overcoated photoresists 罗门哈斯电子材料韩国有限公司 2022-07-19 CN disclosed
CN-114746809-A Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, pattern forming method, and light-emitting element 信越化学工业株式会社 2022-07-12 CN disclosed
US-20220214619-A1 PHOTORESIST TOPCOAT COMPOSITIONS AND PATTERN FORMATION METHODS DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC 2022-07-07 US disclosed
US-20220214614-A1 PHOTOACID GENERATORS, PHOTORESIST COMPOSITIONS, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2022-07-07 US disclosed
EP-2384457-B1 COATING COMPOSITIONS MERCK PATENT GMBH (DE) 2022-07-06 EP disclosed
CN-114690553-A Photoacid generator, photoresist composition, and pattern forming method 罗门哈斯电子材料有限责任公司 2022-07-01 CN disclosed
CN-114690556-A Photoresist topcoat composition and pattern forming method 罗门哈斯电子材料有限责任公司 2022-07-01 CN disclosed
CN-108693713-B Resist underlayer film material, pattern formation method, and resist underlayer film formation method 信越化学工业株式会社 2022-06-03 CN disclosed
EP-4001344-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, LAYERED PRODUCT, AND PATTERN FORMATION METHOD Shin-Etsu Chemical Co., Ltd. (JP) 2022-05-25 EP disclosed
US-11333975-B2 Polymer, photosensitive resin composition, patterning method, method of forming cured film, interlayer insulating film, surface protective film, and electronic component INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2022-05-17 US disclosed
CN-114442426-A Photoresist composition and pattern forming method 罗门哈斯电子材料有限责任公司 2022-05-06 CN disclosed
CN-114442427-A Photoresist composition and pattern forming method 罗门哈斯电子材料有限责任公司 2022-05-06 CN disclosed
US-20220137509-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC 2022-05-05 US disclosed
US-20220137506-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2022-05-05 US disclosed
CN-109143783-B Coating compositions for use with overcoated photoresists 罗门哈斯电子材料韩国有限公司 2022-04-29 CN disclosed
CN-107129448-B Photoacid generating monomer, polymer derived therefrom, and photoresist composition including the same 罗门哈斯电子材料有限责任公司 2022-04-26 CN disclosed
CN-109541886-B Antireflective compositions, methods of use thereof, and coated substrates 罗门哈斯电子材料韩国有限公司 2022-04-26 CN disclosed
CN-109422881-B Epoxy group-containing isocyanurate-modified silicone resin, photosensitive resin composition, photosensitive dry film, laminate, and pattern formation method 信越化学工业株式会社 2022-04-19 CN disclosed
US-20220112321-A1 HIGH REFRACTIVE INDEX MATERIALS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2022-04-14 US disclosed
EP-3981806-A1 HIGH REFRACTIVE INDEX MATERIALS Rohm and Haas Electronic Materials LLC (US) 2022-04-13 EP disclosed
CN-114341282-A Curable composition for inkjet 太阳油墨制造株式会社 2022-04-12 CN disclosed
CN-114316137-A High refractive index materials 罗门哈斯电子材料有限责任公司 2022-04-12 CN disclosed
US-11294283-B2 Photosensitive resin composition, photosensitive resin laminate, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-04-05 US disclosed
US-11294284-B2 Photosensitive resin composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-04-05 US disclosed
US-11294282-B2 Epoxy-containing, isocyanurate-modified silicone resin, photosensitive resin composition, photosensitive dry film, laminate, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-04-05 US disclosed
EP-3974904-A1 PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATION FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT Shin-Etsu Chemical Co., Ltd. (JP) 2022-03-30 EP disclosed
CN-114253071-A Photoresist composition and pattern forming method 罗门哈斯电子材料有限责任公司 2022-03-29 CN disclosed
CN-114253069-A Photosensitive resin composition, pattern forming method, cured film forming method, interlayer insulating film, and surface protective film 信越化学工业株式会社 2022-03-29 CN disclosed
US-20220091509-A1 PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATION FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-03-24 US disclosed
US-20220091506-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2022-03-24 US disclosed
US-11262656-B2 Coating compositions for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2022-03-01 US disclosed
CN-114063385-A Photoresist composition and pattern forming method 罗门哈斯电子材料有限责任公司 2022-02-18 CN disclosed
US-20220043342-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2022-02-10 US disclosed
US-11243467-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2022-02-08 US disclosed
US-20220019143-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2022-01-20 US disclosed
US-20220011670-A1 RESIST UNDERLAYER SURFACE MODIFICATION INTERNATIONAL BUSINESS MACHINES CORPORATION 2022-01-13 US disclosed
US-11187982-B2 Photosensitive resin composition, photosensitive dry film, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-11-30 US disclosed
EP-3674350-B1 PHOTOSENSITIVE RESIN COMPOSITION, LAMINATE, AND PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2021-11-24 EP disclosed
US-11156919-B2 Photosensitive resin composition, pattern forming process, and fabrication of opto-semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-10-26 US disclosed
EP-3896521-A1 POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING METHOD, METHOD OF FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT Shin-Etsu Chemical Co., Ltd. (JP) 2021-10-20 EP disclosed
EP-3896114-A1 NOVEL COMPOUND, POLYIMIDE RESIN AND METHOD OF PRODUCING THE SAME, PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING METHOD AND METHOD OF FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT Shin-Etsu Chemical Co., Ltd. (JP) 2021-10-20 EP disclosed
US-11150556-B2 Polymer of polyimide precursor, positive type photosensitive resin composition, negative type photosensitive resin composition, patterning process, method for forming cured film, interlayer insulating film, surface protective film, and electronic parts SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-10-19 US disclosed
US-20210317270-A1 NOVEL COMPOUND, POLYIMIDE RESIN AND METHOD OF PRODUCING THE SAME, PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING METHOD AND METHOD OF FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-10-14 US disclosed
US-20210317268-A1 POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING METHOD, METHOD OF FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC COMPONENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-10-14 US disclosed
US-11143962-B2 Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-10-12 US disclosed
US-11137686-B2 Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, and resist pattern forming method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-10-05 US disclosed
US-11119409-B2 Polysiloxane skeleton polymer, photosensitive resin composition, pattern forming process, and fabrication of opto-semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-09-14 US disclosed
US-11092894-B2 Method for forming pattern using anti-reflective coating composition comprising photoacid generator ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2021-08-17 US disclosed
EP-3660077-B1 SILOXANE POLYMER CONTAINING ISOCYANURIC ACID AND POLYETHER SKELETONS, PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING PROCESS, AND FABRICATION OF OPTO-SEMICONDUCTOR DEVICE SHINETSU CHEMICAL CO (JP) 2021-08-11 EP disclosed
US-11086220-B2 Underlayer coating compositions for use with photoresists ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2021-08-10 US disclosed
EP-3118183-B1 COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING THE COMPOUND OR RESIN MITSUBISHI GAS CHEMICAL CO (JP) 2021-07-21 EP disclosed
US-20210200081-A1 PATTERN FORMATION METHODS ROHM AND HAAS ELECTRONIC MATERIALS LLC 2021-07-01 US disclosed
US-20210200084-A1 POLYMERS AND PHOTORESIST COMPOSITIONS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2021-07-01 US disclosed
EP-3657253-B1 PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING PROCESS, AND ANTIREFLECTION FILM SHINETSU CHEMICAL CO (JP) 2021-06-30 EP disclosed
US-20210165316-A1 PHOTOLITHOGRAPHY METHOD SAMSUNG ELECTRONICS CO., LTD. (KR) 2021-06-03 US disclosed
EP-3179308-B1 UNDERLAYER FILM-FORMING COMPOSITION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMING METHOD MITSUBISHI GAS CHEMICAL CO (JP) 2021-04-21 EP disclosed
US-10983436-B2 Negative-type photosensitive resin composition, cured film, display device provided with cured film, and production method therefor TORAY INDUSTRIES, INC. (JP) 2021-04-20 US disclosed
US-20210108065-A1 POLYMERS AND PHOTORESIST COMPOSITIONS DUPONT ELECTRONIC MATERIALS INTERNATIONAL, LLC 2021-04-15 US disclosed
US-10919918-B2 Tetracarboxylic dianhydride, polyimide resin and method for producing the same, photosensitive resin compositions, patterning process, method for forming cured film, interlayer insulating film, surface protective film, and electronic parts SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-02-16 US disclosed
US-20200409261-A1 COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-12-31 US disclosed
EP-3495434-B1 NOVEL TETRACARBOXYLIC DIANHYDRIDE, POLYIMIDE RESIN AND METHOD FOR PRODUCING THE SAME, PHOTOSENSITIVE RESIN COMPOSITIONS, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC PARTS SHINETSU CHEMICAL CO (JP) 2020-12-30 EP disclosed
US-20200377713-A1 POLYMERS, PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS ROHM AND HAAS ELECTRONIC MATERIALS LLC 2020-12-03 US disclosed
EP-3450478-B1 EPOXY-CONTAINING, ISOCYANURATE-MODIFIED SILICONE RESIN, PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, LAMINATE, AND PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2020-11-11 EP disclosed
US-10816900-B2 Tetracarboxylic acid diester compound, polymer of polyimide precursor and method for producing same, negative photosensitive resin composition, patterning process, and method for forming cured film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-10-27 US disclosed
US-10816898-B2 2020-10-27 US disclosed
EP-3441419-B1 SILICONE STRUCTURE-CONTAINING POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, LAMINATE, AND PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2020-10-07 EP disclosed
US-10788751-B2 Coating composition for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2020-09-29 US disclosed
US-20200303086-A1 ELECTROCONDUCTIVE FILM AND METHOD FOR MANUFACTURING ELECTROCONDUCTIVE PATTERN TOKYO UNIVERSITY OF SCIENCE FOUNDATION (JP) 2020-09-24 US disclosed
EP-3553601-B1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN LAMINATE, AND PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2020-09-23 EP disclosed
US-10745372-B2 Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-08-18 US disclosed
US-10747112-B2 Compound, resin, and purification method thereof, material for forming underlayer film for lithography, composition for forming underlayer film, and underlayer film, as well as resist pattern forming method and circuit pattern forming method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-08-18 US disclosed
EP-3346334-B1 USE OF A COMPOSITION FOR FORMING A PHOTORESIST UNDERLAYER FILM FOR LITHOGRAPHY, PHOTORESIST UNDERLAYER FILM FOR LITHOGRAPHY AND METHOD FOR PRODUCING SAME, AND RESIST PATTERN FORMING METHOD MITSUBISHI GAS CHEMICAL CO (JP) 2020-08-12 EP disclosed
US-10720259-B2 Electroconductive film and method for manufacturing electroconductive pattern TOKYO UNIVERSITY OF SCIENCE FOUNDATION (JP) 2020-07-21 US disclosed
US-10719014-B2 Photoresists comprising amide component ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2020-07-21 US disclosed
US-10703917-B2 Coating compositions suitable for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2020-07-07 US disclosed
US-20200209751-A1 PHOTOSENSITIVE RESIN COMPOSITION, LAMINATE, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-07-02 US disclosed
EP-3674350-A1 PHOTOSENSITIVE RESIN COMPOSITION, LAMINATE, AND PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2020-07-01 EP disclosed
EP-3235803-B1 TETRACARBOXYLIC ACID DIESTER COMPOUND, POLYIMIDE PRECURSOR POLYMER AND METHOD FOR PRODUCING THE SAME, NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING CURED FILM SHINETSU CHEMICAL CO (JP) 2020-06-03 EP disclosed
EP-3660077-A1 SILOXANE POLYMER CONTAINING ISOCYANURIC ACID AND POLYETHER SKELETONS, PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING PROCESS, AND FABRICATION OF OPTO-SEMICONDUCTOR DEVICE Shin-Etsu Chemical Co., Ltd. (JP) 2020-06-03 EP disclosed
US-20200166838-A1 RESIST MATERIAL DIC CORPORATION (JP) 2020-05-28 US disclosed
US-20200165394-A1 SILOXANE POLYMER CONTAINING ISOCYANURIC ACID AND POLYETHER SKELETONS, PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING PROCESS, AND FABRICATION OF OPTO-SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-05-28 US disclosed
US-20200165456-A1 POLYSILOXANE SKELETON POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING PROCESS, AND FABRICATION OF OPTO-SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-05-28 US disclosed
EP-3656803-A1 POLYSILOXANE SKELETON POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING PROCESS, AND FABRICATION OF OPTO-SEMICONDUCTOR DEVICE Shin-Etsu Chemical Co., Ltd. (JP) 2020-05-27 EP disclosed
EP-3657253-A1 PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING PROCESS, AND ANTIREFLECTION FILM Shin-Etsu Chemical Co., Ltd. (JP) 2020-05-27 EP disclosed
US-20200157348-A1 PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING PROCESS, AND ANTIREFLECTION FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-05-21 US disclosed
CN-107075155-B Resin-containing sheet, and structure and circuit board using same 太阳控股株式会社 2020-05-19 CN disclosed
US-20200140678-A1 PHOTOSENSITIVE RESIN COMPOSITION AND PHOTOSENSITIVE DRY FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-05-07 US disclosed
EP-3647870-A1 PHOTOSENSITIVE RESIN COMPOSITION AND PHOTOSENSITIVE DRY FILM Shin-Etsu Chemical Co., Ltd. (JP) 2020-05-06 EP disclosed
EP-3203320-B9 PHOTOSENSITIVE RESIN COMPOSITION, CURED FILM, ELEMENT PROVIDED WITH CURED FILM, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TORAY INDUSTRIES (JP) 2020-05-06 EP disclosed
EP-3640289-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2020-04-22 EP disclosed
US-20200117089-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-04-16 US disclosed
US-10578969-B2 Photoresist topcoat compositions and methods of processing photoresist compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2020-03-03 US disclosed
US-10577323-B2 Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying compound or resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-03-03 US disclosed
US-10564542-B2 Photoresist compositions and methods DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2020-02-18 US disclosed
EP-3279179-B1 COMPOUND, RESIN, AND PURIFICATION METHOD THEREOF, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM , AND UNDERLAYER FILM, AS WELL AS RESIST PATTERN FORMING METHOD AND CIRCUIT PATTERN FORMING METHOD. MITSUBISHI GAS CHEMICAL CO (JP) 2019-12-18 EP disclosed
EP-3572879-A1 PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING PROCESS, AND FABRICATION OF OPTO-SEMICONDUCTOR DEVICE Shin-Etsu Chemical Co., Ltd. (JP) 2019-11-27 EP disclosed
US-20190354015-A1 COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2019-11-21 US disclosed
US-20190354013-A1 PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING PROCESS, AND FABRICATION OF OPTO-SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-11-21 US disclosed
US-10481494-B1 Coating compositions for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2019-11-19 US disclosed
US-10457779-B2 Tetracarboxylic acid diester compound, polyimide precursor polymer and method for producing the same, negative photosensitive resin composition, positive photosensitive resin composition, patterning process, and method for forming cured film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-10-29 US disclosed
EP-3203320-B1 PHOTOSENSITIVE RESIN COMPOSITION, CURED FILM, ELEMENT PROVIDED WITH CURED FILM, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TORAY INDUSTRIES (JP) 2019-10-23 EP disclosed
US-10451970-B2 Silicone skeleton-containing polymer, photo-curable resin composition, photo-curable dry film, laminate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-10-22 US disclosed
EP-3553601-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN LAMINATE, AND PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2019-10-16 EP disclosed
US-10429737-B2 Antireflective compositions with thermal acid generators ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2019-10-01 US disclosed
CN-110297398-A Photosensitve resin composition, photosensitive resin lamilate and pattern forming method 信越化学工业株式会社 2019-10-01 CN disclosed
US-20190294045-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN LAMINATE, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-09-26 US disclosed
US-10416563-B2 Resist underlayer film composition, patterning process, and method for forming resist underlayer film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-09-17 US disclosed
US-10409163-B2 Photosensitive resin composition, cured film, element provided with cured film, and method for manufacturing semiconductor device TORAY INDUSTRIES, INC. (JP) 2019-09-10 US disclosed
EP-3103831-B1 PHOTO-CURABLE RESIN COMPOSITION AND PHOTO-CURABLE DRY FILM USING THE SAME SHINETSU CHEMICAL CO (JP) 2019-09-04 EP disclosed
EP-2602661-B1 Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film SHINETSU CHEMICAL CO (JP) 2019-08-28 EP disclosed
EP-3216823-B1 RESIN-CONTAINING SHEET, AND STRUCTURE AND WIRING BOARD USING SAME ASAHI CHEMICAL IND (JP) 2019-08-14 EP disclosed
US-20190235385-A1 PHOTORESIST TOPCOAT COMPOSITIONS AND METHODS OF PROCESSING PHOTORESIST COMPOSITIONS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2019-08-01 US disclosed
US-10364314-B2 Compound, resin, material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography, resist pattern forming method, circuit pattern forming method, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2019-07-30 US disclosed
US-10365562-B2 Coating compositions for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2019-07-30 US disclosed
EP-3382454-B1 RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM SHINETSU CHEMICAL CO (JP) 2019-07-24 EP disclosed
US-10359701-B2 Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2019-07-23 US disclosed
CN-109976091-A The manufacture of photosensitive resin composition, pattern forming method and optoelectronic semiconductor component 信越化学工业株式会社 2019-07-05 CN disclosed
US-20190204742-A1 PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2019-07-04 US disclosed
US-20190203065-A1 PHOTORESIST TOPCOAT COMPOSITIONS AND METHODS OF PROCESSING PHOTORESIST COMPOSITIONS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2019-07-04 US disclosed
US-20190204743-A1 PHOTORESIST COMPOSITIONS AND METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2019-07-04 US disclosed
US-20190204741-A1 PHOTORESIST TOPCOAT COMPOSITIONS AND METHODS OF PROCESSING PHOTORESIST COMPOSITIONS ROHM & HAAS ELECT MAT (US) 2019-07-04 US disclosed
EP-3358412-B1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, PHOTOSENSITIVE RESIN COATING, AND PATTERN FORMING PROCESS SHINETSU CHEMICAL CO (JP) 2019-07-03 EP disclosed
EP-3505551-A1 PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING PROCESS, AND FABRICATION OF OPTO-SEMICONDUCTOR DEVICE Shin-Etsu Chemical Co., Ltd. (JP) 2019-07-03 EP disclosed
US-10338471-B2 Composition for forming underlayer film for lithography, underlayer film for lithography and pattern forming method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2019-07-02 US disclosed
US-20190196331-A1 PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING PROCESS, AND FABRICATION OF OPTO-SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-06-27 US disclosed
EP-3495434-A1 NOVEL TETRACARBOXYLIC DIANHYDRIDE, POLYIMIDE RESIN AND METHOD FOR PRODUCING THE SAME, PHOTOSENSITIVE RESIN COMPOSITIONS, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC PARTS Shin-Etsu Chemical Co., Ltd. (JP) 2019-06-12 EP disclosed
US-20190169211-A1 NOVEL TETRACARBOXYLIC DIANHYDRIDE, POLYIMIDE RESIN AND METHOD FOR PRODUCING THE SAME, PHOTOSENSITIVE RESIN COMPOSITIONS, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC PARTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-06-06 US disclosed
EP-3275857-B1 TETRACARBOXYLIC ACID DIESTER COMPOUND, POLYIMIDE PRECURSOR POLYMER AND METHOD FOR PRODUCING THE SAME, NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING CURED FILM SHINETSU CHEMICAL CO (JP) 2019-06-05 EP disclosed
US-10310377-B2 Material for forming film for lithography, composition for forming film for lithography, film for lithography, pattern forming method and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2019-06-04 US disclosed
EP-2799928-B1 PHOTOSENSITIVE RESIN COMPOSITION AND PROCESS FOR PRODUCING SEMICONDUCTOR ELEMENT TORAY INDUSTRIES (JP) 2019-05-22 EP disclosed
US-10295910-B2 Photoresists and methods of use thereof ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2019-05-21 US disclosed
US-10294183-B2 Compound, resin, material for forming underlayer film for lithography, underlayer film for lithography, pattern forming method, and method for purifying the compound or resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2019-05-21 US disclosed
US-20190129306-A1 UNDERLAYER COATING COMPOSITIONS FOR USE WITH PHOTORESISTS DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2019-05-02 US disclosed
US-10274824-B2 Photobase generators and photoresist compositions comprising same ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2019-04-30 US disclosed
US-10241412-B2 Resist underlayer film composition, patterning process, and method for forming resist underlayer film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-03-26 US disclosed
US-20190085173-A1 ANTIREFLECTIVE COMPOSITIONS WITH THERMAL ACID GENERATORS DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2019-03-21 US disclosed
EP-2602660-B1 Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film SHINETSU CHEMICAL CO (JP) 2019-03-20 EP disclosed
EP-2387735-B1 NONPOLYMERIC BINDERS FOR SEMICONDUCTOR SUBSTRATE COATINGS FUJIFILM ELECTRONIC MAT USA INC (US) 2019-03-13 EP disclosed
US-10227505-B2 Active energy ray-curable composition KANEKA CORPORATION (JP) 2019-03-12 US disclosed
US-20190072851-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, CURED FILM, DISPLAY DEVICE PROVIDED WITH CURED FILM, AND PRODUCTION METHOD THEREFOR TORAY INDUSTRIES, INC. (JP) 2019-03-07 US disclosed
CN-109422881-A Containing the isocyanurate-modified organic siliconresin of epoxy group, photosensitive resin composition, photo-conductive film, laminated body and pattern forming method 信越化学工业株式会社 2019-03-05 CN disclosed
CN-109411336-A Photolithography method 德淮半导体有限公司 2019-03-01 CN disclosed
US-20190056657-A1 COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2019-02-21 US disclosed
EP-3056552-B1 ACTIVE ENERGY-RAY-CURABLE RESIN COMPOSITION FOR COATING ORGANIC OR INORGANIC SUBSTRATE KANEKA CORP (JP) 2019-02-20 EP disclosed
US-20190049844-A1 SILICONE STRUCTURE-CONTAINING POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, LAMINATE, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-02-14 US disclosed
US-20190049843-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, LAMINATE, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-02-14 US disclosed
EP-3441419-A1 SILICONE STRUCTURE-CONTAINING POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, LAMINATE, AND PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2019-02-13 EP disclosed
EP-3441818-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, LAMINATE, AND PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2019-02-13 EP disclosed
US-10203601-B2 Tetracarboxylic acid diester compound, polymer of polyimide precursor and method for producing same, negative photosensitive resin composition, patterning process, and method for forming cured film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-02-12 US disclosed
US-10203602-B2 Coating compositions for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2019-02-12 US disclosed
US-20190041750-A1 MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PRODUCTION METHOD THEREOF, PATTERN FORMING METHOD, RESIN, AND PURIFICATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2019-02-07 US disclosed
US-10197918-B2 Photoresist topcoat compositions and methods of processing photoresist compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2019-02-05 US disclosed
EP-3141959-B1 LITHOGRAPHIC FILM FORMATION MATERIAL, COMPOSITION FOR LITHOGRAPHIC FILM FORMATION, LITHOGRAPHIC FILM, PATTERN FORMATION METHOD, AND PURIFICATION METHOD MITSUBISHI GAS CHEMICAL CO (JP) 2019-01-30 EP disclosed
EP-2336829-B1 Photoresists and methods for use thereof ROHM & HAAS ELECT MAT (US) 2019-01-23 EP disclosed
US-20190018320-A1 TETRACARBOXYLIC ACID DIESTER COMPOUND, POLYMER OF POLYIMIDE PRECURSOR AND METHOD FOR PRODUCING SAME, NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING CURED FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-01-17 US disclosed
US-10180627-B2 Processes for photolithography ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2019-01-15 US disclosed
US-10162265-B2 Pattern treatment methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2018-12-25 US disclosed
US-20180364575-A1 COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2018-12-20 US disclosed
WO-2018229554-A2 COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2018-12-20 WO disclosed
US-20180364576-A1 COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2018-12-20 US disclosed
US-10133179-B2 Pattern treatment methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2018-11-20 US disclosed
US-10131810-B2 Active energy-ray-curable resin composition for coating organic or inorganic substrate KANCKA CORPORATION (JP) 2018-11-20 US disclosed
EP-3398983-A1 POLYMER OF POLYIMIDE PRECURSOR, POSITIVE TYPE PHOTOSENSITIVE RESIN COMPOSITION, NEGATIVE TYPE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC PARTS Shin-Etsu Chemical Co., Ltd. (JP) 2018-11-07 EP disclosed
US-10114287-B2 Silicone skeleton-containing polymer compound and method for producing same, chemically amplified negative resist composition, photo-curable dry film and method for producing same, patterning process, layered product, and substrate SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-10-30 US disclosed
EP-2716671-B1 PHENOLIC RESIN AND MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY MITSUBISHI GAS CHEMICAL CO (JP) 2018-10-10 EP disclosed
US-20180284615-A1 RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-10-04 US disclosed
US-20180284614-A1 RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-10-04 US disclosed
EP-3382454-A1 RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM Shin-Etsu Chemical Co., Ltd. (JP) 2018-10-03 EP disclosed
EP-3382453-A1 RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM Shin-Etsu Chemical Co., Ltd. (JP) 2018-10-03 EP disclosed
US-10087288-B2 Silicone skeleton-containing polymer compound, chemically amplified negative resist composition, photo-curable dry film and method for producing same, patterning process, layered product, substrate, and semiconductor apparatus SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-10-02 US disclosed
US-20180275513-A1 POLYMER OF POLYIMIDE PRECURSOR, POSITIVE TYPE PHOTOSENSITIVE RESIN COMPOSITION, NEGATIVE TYPE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC PARTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-09-27 US disclosed
EP-2660257-B1 AROMATIC HYDROCARBON RESIN, COMPOSITION FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, AND METHOD FOR FORMING MULTILAYER RESIST PATTERN MITSUBISHI GAS CHEMICAL CO (JP) 2018-09-19 EP disclosed
EP-1877864-B1 NANOCOMPOSITE PHOTOSENSITIVE COMPOSITION AND USE THEREOF MERCK PATENT GMBH (DE) 2018-09-19 EP disclosed
WO-2018160726-A1 LOW DIELECTRIC CONSTANT POROUS EPOXY-BASED DIELECTRIC GEORGIA TECH RESEARCH CORPORATION (US) 2018-09-07 WO disclosed
US-20180246409-A1 MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PRODUCTION METHOD THEREOF, AND RESIST PATTERN FORMING METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-08-30 US disclosed
CN-108388082-A Photosensitive polymer combination, photosensitive dry film, photosensitive resin coating and pattern forming method 信越化学工业株式会社 2018-08-10 CN disclosed
US-20180224743-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, PHOTOSENSITIVE RESIN COATING, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-08-09 US disclosed
EP-3358412-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, PHOTOSENSITIVE RESIN COATING, AND PATTERN FORMING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2018-08-08 EP disclosed
US-10042259-B2 Topcoat compositions and pattern-forming methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2018-08-07 US disclosed
US-10042255-B2 Block copolymers and pattern treatment compositions and methods DOW GLOBAL TECHNOLOGIES LLC (US) 2018-08-07 US disclosed
CN-103941547-B Hard mask is surface-treated 罗门哈斯电子材料有限公司 2018-07-27 CN disclosed
US-20180212026-A1 SURFACE MODIFIED DIAMOND MATERIALS AND METHODS OF MANUFACTURING MASSACHUSETTS INSTITUTE OF TECHNOLOGY 2018-07-26 US disclosed
US-20180208703-A1 COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, RESIST PATTERN FORMING METHOD, CIRCUIT PATTERN FORMING METHOD, AND PURIFICATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-07-26 US disclosed
US-20180203352-A1 MONOMERS, POLYMERS AND PHOTORESIST COMPOSITIONS ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2018-07-19 US disclosed
EP-3348542-A1 COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR PRODUCING AMORPHOUS FILM, MATERIAL FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, COMPOSTION FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2018-07-18 EP disclosed
EP-3346335-A1 MATERIAL FOR FORMING UNDERLAYER FILMS FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILMS FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND METHOD FOR PRODUCING SAME, PATTERN FORMING METHOD, RESIN, AND PURIFICATION METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2018-07-11 EP disclosed
EP-3346334-A1 MATERIAL FOR FORMING UNDERLAYER FILMS FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILMS FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND METHOD FOR PRODUCING SAME, AND RESIST PATTERN FORMING METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2018-07-11 EP disclosed
EP-2336828-B1 Photoresists and methods for use thereof ROHM & HAAS ELECT MAT (US) 2018-07-11 EP disclosed
EP-3327005-A1 COMPOUND, RESIN, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, RESIST PATTERN FORMING METHOD, CIRCUIT PATTERN FORMING METHOD, AND PURIFICATION METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2018-05-30 EP disclosed
US-9975830-B2 Compound containing modified phenolic hydroxy group, method for producing compound containing modified phenolic hydroxy group, photosensitive composition, resist material, and resist coating film DIC CORPORATION (JP) 2018-05-22 US disclosed
US-9971242-B2 Photo-curable resin composition and photo-curable dry film using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-15 US disclosed
US-20180120703-A1 PHOTORESIST TOPCOAT COMPOSITIONS AND METHODS OF PROCESSING PHOTORESIST COMPOSITIONS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2018-05-03 US disclosed
US-20180118970-A1 TOPCOAT COMPOSITIONS AND PATTERN-FORMING METHODS ROHM AND HAAS ELECTRONIC MATERIALS LLC 2018-05-03 US disclosed
US-20180120702-A1 TETRACARBOXYLIC ACID DIESTER COMPOUND, POLYMER OF POLYIMIDE PRECURSOR AND METHOD FOR PRODUCING SAME, NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING CURED FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-03 US disclosed
EP-3315504-A1 TETRACARBOXYLIC ACID DIESTER COMPOUND, POLYMER OF POLYIMIDE PRECURSOR AND METHOD FOR PRODUCING SAME, NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING CURED FILM Shin-Etsu Chemical Co., Ltd. (JP) 2018-05-02 EP disclosed
US-20180101096-A1 MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PATTERN FORMING METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-04-12 US disclosed
US-20180101097-A1 MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PATTERN FORMING METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-04-12 US disclosed
US-20180095367-A1 COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2018-04-05 US disclosed
US-20180095368-A1 COMPOUND, RESIN, AND PURIFICATION METHOD THEREOF, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM, AND UNDERLAYER FILM, AS WELL AS RESIST PATTERN FORMING METHOD AND CIRCUIT PATTERN FORMING METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-04-05 US disclosed
EP-2955175-B1 USE OF 9-[1,1'-BIPHENYL]-4-YL-9H-XANTHENE-2,7-DIOL AND SIMILAR COMPOUNDS FOR FORMING RESINS FOR USE IN UNDERLAYER FILMS FOR LITHOGRAPHY AND IN PATTERN FORMING METHODS MITSUBISHI GAS CHEMICAL CO (JP) 2018-04-04 EP disclosed
US-9926422-B2 Bump-forming material, method for producing electronic component, method for producing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2018-03-27 US disclosed
US-9918921-B2 Methods for shaping fibrous material and treatment compositions therefor THE PROCTER & GAMBLE COMPANY (US) 2018-03-20 US disclosed
US-9916973-B2 Photolithographic methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2018-03-13 US disclosed
US-20180065930-A1 COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING COMPOUND OR RESIN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-03-08 US disclosed
US-9910355-B2 Method of negative tone development using a copolymer multilayer electrolyte and articles made therefrom ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2018-03-06 US disclosed
US-9910353-B2 Method of negative tone development using a copolymer multilayer electrolyte and articles made therefrom DOW GLOBAL TECHNOLOGIES LLC (US) 2018-03-06 US disclosed
US-20180059545-A1 MONOMERS, POLYMERS AND PHOTORESIST COMPOSITIONS DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2018-03-01 US disclosed
EP-2657766-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2018-02-28 EP disclosed
US-20180052392-A1 MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, RESIST PATTERN FORMING METHOD, AND CIRCUIT PATTERN FORMING METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-02-22 US disclosed
US-20180044270-A1 COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING COMPOUND OR RESIN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-02-15 US disclosed
EP-3282318-A1 MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMATION METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2018-02-14 EP disclosed
EP-3282319-A1 MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMATION METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2018-02-14 EP disclosed
EP-3279179-A1 COMPOUND, RESIN, AND METHOD FOR PURIFYING SAME, UNDERLAYER FILM FORMATION MATERIAL FOR LITHOGRAPHY, UNDERLAYER FILM FORMING COMPOSITION, AND UNDERLAYER FILM, AND METHOD FOR FORMING RESIST PATTERN AND METHOD FOR FORMING CIRCUIT PATTERN Mitsubishi Gas Chemical Company, Inc. (JP) 2018-02-07 EP disclosed
US-20180031975-A1 PATTERN TREATMENT METHODS ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2018-02-01 US disclosed
US-20180029968-A1 COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, RESIST PATTERN FORMING METHOD, CIRCUIT PATTERN FORMING METHOD, AND PURIFICATION METHOD OF COMPOUND OR RESIN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-02-01 US disclosed
US-20180031971-A1 METHOD OF NEGATIVE TONE DEVELOPMENT USING A COPOLYMER MULTILAYER ELECTROLYTE AND ARTICLES MADE THEREFROM ROHM AND HAAS ELECTRONIC MATERIALS LLC 2018-02-01 US disclosed
US-20180031972-A1 METHOD OF NEGATIVE TONE DEVELOPMENT USING A COPOLYMER MULTILAYER ELECTROLYTE AND ARTICLES MADE THEREFROM ROHM AND HAAS ELECTRONIC MATERIALS LLC 2018-02-01 US disclosed
EP-3275857-A1 TETRACARBOXYLIC ACID DIESTER COMPOUND, POLYIMIDE PRECURSOR POLYMER AND METHOD FOR PRODUCING THE SAME, NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING CURED FILM Shin-Etsu Chemical Co., Ltd. (JP) 2018-01-31 EP disclosed
EP-2955577-B1 COMPOUND, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMING METHOD MITSUBISHI GAS CHEMICAL CO (JP) 2018-01-31 EP disclosed
US-9877559-B2 Methods for shaping fibrous material and treatment compositions therefor THE PROCTER & GAMBLE COMANY (US) 2018-01-30 US disclosed
US-20180024434-A1 TETRACARBOXYLIC ACID DIESTER COMPOUND, POLYIMIDE PRECURSOR POLYMER AND METHOD FOR PRODUCING THE SAME, NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING CURED FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-25 US disclosed
EP-3269712-A1 COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING COMPOUND OR RESIN Mitsubishi Gas Chemical Company, Inc. (JP) 2018-01-17 EP disclosed
EP-3266759-A1 COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING COMPOUND OR RESIN Mitsubishi Gas Chemical Company, Inc. (JP) 2018-01-10 EP disclosed
EP-3267256-A1 UNDERLAYER FILM-FORMING MATERIAL FOR LITHOGRAPHY, UNDERLAYER FILM-FORMING COMPOSITION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, RESIST PATTERN-FORMING METHOD, AND CIRCUIT PATTERN-FORMING METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2018-01-10 EP disclosed
US-20180004088-A1 SILICONE SKELETON-CONTAINING POLYMER, PHOTO-CURABLE RESIN COMPOSITION, PHOTO-CURABLE DRY FILM, LAMINATE, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-04 US disclosed
EP-3263626-A1 SILICONE SKELETON-CONTAINING POLYMER, PHOTO-CURABLE RESIN COMPOSITION, PHOTO-CURABLE DRY FILM, LAMINATE, AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2018-01-03 EP disclosed
US-9851823-B2 Electronic devices and precursor articles EASTMAN KODAK COMPANY (US) 2017-12-26 US disclosed
EP-3257835-A1 COMPOUND, RESIN, LITHOGRAPHY UNDERLAYER FILM FORMING MATERIAL, LITHOGRAPHY UNDERLAYER FILM FORMING COMPOSITION, LITHOGRAPHY UNDERLAYER FILM, METHOD FOR FORMING RESIST PATTERN, METHOD FOR FORMING CIRCUIT PATTERN, AND METHOD FOR PURIFYING COMPOUND OR RESIN Mitsubishi Gas Chemical Company, Inc. (JP) 2017-12-20 EP disclosed
US-20170349564-A1 COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND PURIFICATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2017-12-07 US disclosed
US-9828355-B2 Compound, material for forming underlayer film for lithography, underlayer film for lithography and pattern forming method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2017-11-28 US disclosed
US-20170336709-A1 COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2017-11-23 US disclosed
US-20170329221-A1 PHOTOSENSITIVE COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, AND RESIST UNDERLAYER FILM DIC CORPORATION (JP) 2017-11-16 US disclosed
US-9815930-B2 Block copolymer and associated photoresist composition and method of forming an electronic device ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2017-11-14 US disclosed
US-9809601-B2 Compound, material for forming underlayer film for lithography, underlayer film for lithography and pattern forming method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2017-11-07 US disclosed
US-20170313889-A1 COATING COMPOSITIONS SUITABLE FOR USE WITH AN OVERCOATED PHOTORESIST U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2017-11-02 US disclosed
US-20170313831-A1 RESIN-CONTAINING SHEET, AND STRUCTURE AND WIRING BOARD USING SAME ASAHI KASEI KABUSHIKI KAISHA (JP) 2017-11-02 US disclosed
EP-3239141-A1 COMPOUND, RESIN, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD AND PURIFICATION METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2017-11-01 EP disclosed
US-20170309363-A1 ELECTROCONDUCTIVE FILM AND METHOD FOR MANUFACTURING ELECTROCONDUCTIVE PATTERN TOKYO UNIVERSITY OF SCIENCE FOUNDATION (JP) 2017-10-26 US disclosed
EP-3235803-A1 TETRACARBOXYLIC ACID DIESTER COMPOUND, POLYIMIDE PRECURSOR POLYMER AND METHOD FOR PRODUCING THE SAME, NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING CURED FILM Shin-Etsu Chemical Co., Ltd. (JP) 2017-10-25 EP disclosed
US-20170298186-A1 TETRACARBOXYLIC ACID DIESTER COMPOUND, POLYIMIDE PRECURSOR POLYMER AND METHOD FOR PRODUCING THE SAME, NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING CURED FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-19 US disclosed
US-20170285477-A1 PHOTOSENSITIVE RESIN COMPOSITION, CURED FILM, ELEMENT PROVIDED WITH CURED FILM, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TORAY INDUSTRIES, INC. (JP) 2017-10-05 US disclosed
US-20170283651-A1 COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2017-10-05 US disclosed
EP-2348360-B1 Photoresist comprising nitrogen-containing compound ROHM & HAAS ELECT MAT (US) 2017-09-27 EP disclosed
US-9765175-B2 Modified hydroxy naphthalene novolak resin, production method for modified hydroxy naphthalene novolak resin, photosensitive composition, resist material and coating DIC CORPORATION (JP) 2017-09-19 US disclosed
US-20170260315-A1 NOVOLAC TYPE PHENOL RESIN, MANUFACTURING METHOD THEREFOR, PHOTOSENSITIVE COMPOSITION, RESIST MATERIAL AND COATING FILM DIC CORPORATION (JP) 2017-09-14 US disclosed
US-20170260348-A1 BUMP-FORMING MATERIAL, METHOD FOR PRODUCING ELECTRONIC COMPONENT, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2017-09-14 US disclosed
US-20170260348-A1 BUMP-FORMING MATERIAL, METHOD FOR PRODUCING ELECTRONIC COMPONENT, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2017-09-14 US disclosed
EP-3216823-A1 RESIN-CONTAINING SHEET, AND STRUCTURE AND WIRING BOARD USING SAME ASAHI KASEI KABUSHIKI KAISHA (JP) 2017-09-13 EP disclosed
US-9758610-B2 Acid-labile hyperbranched copolymer and associated photoresist composition and method of forming an electronic device DOW GLOBAL TECHNOLOGIES LLC (US) 2017-09-12 US disclosed
US-9753370-B2 Multiple-pattern forming methods DOW GLOBAL TECHNOLOGIES LLC (US) 2017-09-05 US disclosed
US-9751070-B2 Structure modifying apparatus THE PROCTER & GAMBLE COMPANY (US) 2017-09-05 US disclosed
US-20170248844-A1 PHOTOACID-GENERATING MONOMER, POLYMER DERIVED THEREFROM, PHOTORESIST COMPOSITION INCLUDING THE POLYMER, AND METHOD OF FORMING A PHOTORESIST RELIEF IMAGE USING THE PHOTORESIST COMPOSITION U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2017-08-31 US disclosed
US-20170227849-A1 COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PATTERN FORMING METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2017-08-10 US disclosed
EP-3202811-A1 ACTINIC RADIATION CURABLE COMPOSITION Kaneka Corporation (JP) 2017-08-09 EP disclosed
EP-3203320-A1 PHOTOSENSITIVE RESIN COMPOSITION, CURED FILM, ELEMENT PROVIDED WITH CURED FILM, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Toray Industries, Inc. (JP) 2017-08-09 EP disclosed
US-20170204231-A1 ACTINIC RADIATION CURABLE COMPOSITION KANEKA CORPORATION (JP) 2017-07-20 US disclosed
EP-3191183-A1 STRUCTURE MODIFYING APPARATUS The Procter and Gamble Company (US) 2017-07-19 EP disclosed
EP-3191184-A1 STRUCTURE MODIFYING APPARATUS The Procter and Gamble Company (US) 2017-07-19 EP disclosed
US-9708493-B2 Coating compositions suitable for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2017-07-18 US disclosed
US-9703200-B2 Photolithographic methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2017-07-11 US disclosed
US-9703203-B2 Compositions and methods for pattern treatment DOW GLOBAL TECHNOLOGIES LLC (US) 2017-07-11 US disclosed
US-9704724-B2 Photosensitive resin composition and method for producing semiconductor device TORAY INDUSTRIES, INC. (JP) 2017-07-11 US disclosed
US-9696627-B2 Compositions comprising base-reactive component and processes for photolithography ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2017-07-04 US disclosed
US-20170174808-A1 ACID-LABILE HYPERBRANCHED COPOLYMER AND ASSOCIATED PHOTORESIST COMPOSITION AND METHOD OF FORMING AN ELECTRONIC DEVICE DOW GLOBAL TECHNOLOGIES LLC 2017-06-22 US disclosed
US-9684241-B2 Compositions and methods for pattern treatment DOW GLOBAL TECHNOLOGIES LLC (US) 2017-06-20 US disclosed
US-20170170008-A1 PATTERN TREATMENT METHODS DOW GLOBAL TECHNOLOGIES LLC 2017-06-15 US disclosed
EP-3179308-A1 UNDERLAYER FILM-FORMING COMPOSITION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMING METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2017-06-14 EP disclosed
US-9675989-B2 Structure modifying apparatus THE PROCTER & GAMBLE COMPANY (US) 2017-06-13 US disclosed
US-9671697-B2 Pattern treatment methods DOW GLOBAL TECHNOLOGIES LLC (US) 2017-06-06 US disclosed
US-20170153547-A1 COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2017-06-01 US disclosed
US-9665001-B2 Photoresists and methods for use thereof ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2017-05-30 US disclosed
US-9665005-B2 Pattern treatment methods DOW GLOBAL TECHNOLOGIES LLC (US) 2017-05-30 US disclosed
US-20170144954-A1 MATERIAL FOR FORMING FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING FILM FOR LITHOGRAPHY, FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD AND PURIFICATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2017-05-25 US disclosed
US-20170147101-A1 ELECTRONIC DEVICES AND PRECURSOR ARTICLES BANK OF AMERICA, N.A., AS AGENT 2017-05-25 US disclosed
US-9650533-B2 Articles containing carbon-coated metal particles EASTMAN KODAK COMPANY (US) 2017-05-16 US disclosed
US-20170123319-A1 COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2017-05-04 US disclosed
US-20170123316-A1 BLOCK COPOLYMERS AND PATTERN TREATMENT COMPOSITIONS AND METHODS ROHM AND HAAS ELECTRONIC MATERIALS LLC 2017-05-04 US disclosed
US-9637659-B2 Latex primer composition and latex primed substrates EASTMAN KODAK COMPANY (US) 2017-05-02 US disclosed
US-20170090283-A1 PHOTORESIST COMPOSITIONS AND METHODS DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2017-03-30 US disclosed
US-9606652-B2 Electronic devices and precursor articles EASTMAN KODAK COMPANY (US) 2017-03-28 US disclosed
EP-3002633-B1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, MAKING METHOD, PATTERNING PROCESS, AND ELECTRIC/ELECTRONIC PART-PROTECTING FILM SHINETSU CHEMICAL CO (JP) 2017-03-22 EP disclosed
US-20170073288-A1 COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING THE COMPOUND OR RESIN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2017-03-16 US disclosed
EP-3141959-A1 LITHOGRAPHIC FILM FORMATION MATERIAL, COMPOSITION FOR LITHOGRAPHIC FILM FORMATION, LITHOGRAPHIC FILM, PATTERN FORMATION METHOD, AND PURIFICATION METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2017-03-15 EP disclosed
US-20170066703-A1 COMPOUND CONTAINING MODIFIED PHENOLIC HYDROXY GROUP, METHOD FOR PRODUCING COMPOUND CONTAINING MODIFIED PHENOLIC HYDROXY GROUP, PHOTOSENSITIVE COMPOSITION, RESIST MATERIAL, AND RESIST COATING FILM DIC CORPORATION (JP) 2017-03-09 US disclosed
US-20170059991-A1 COATING COMPOSITION FOR USE WITH AN OVERCOATED PHOTORESIST U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2017-03-02 US disclosed
EP-1415974-B1 PROCESS FOR PRODUCTION OF FLUORINE-CONTAINING NORBORNENE DERIVATIVES DAIKIN IND LTD (JP) 2017-03-01 EP disclosed
US-9581904-B2 Photoresist overcoat compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2017-02-28 US disclosed
US-9581901-B2 Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2017-02-28 US disclosed
US-20170037178-A1 BLOCK COPOLYMER AND ASSOCIATED PHOTORESIST COMPOSITION AND METHOD OF FORMING AN ELECTRONIC DEVICE THE UNIVERSITY OF QUEENSLAND (AU) 2017-02-09 US disclosed
EP-3002308-B1 SILICONE SKELETON-CONTAINING POLYMER COMPOUND AND METHOD FOR PRODUCING SAME, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM AND METHOD FOR PRODUCING SAME, PATTERNING PROCESS, LAYERED PRODUCT, AND SUBSTRATE SHINETSU CHEMICAL CO (JP) 2017-02-08 EP disclosed
EP-2258691-B1 Coating compositions for use with an overcoated photoresist ROHM & HAAS ELECT MAT (US) 2017-01-25 EP disclosed
EP-3118183-A1 COMPOUND, RESIN, BASE LAYER FILM-FORMING MATERIAL FOR LITHOGRAPHY, BASE LAYER FILM FOR LITHOGRAPHY, PATTERN-FORMING METHOD, AND METHOD FOR REFINING COMPOUND OR RESIN Mitsubishi Gas Chemical Company, Inc. (JP) 2017-01-18 EP disclosed
EP-3043206-B1 SILICONE SKELETON-CONTAINING POLYMER COMPOUND, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM AND METHOD FOR PRODUCING SAME, PATTERNING PROCESS, LAYERED PRODUCT, SUBSTRATE, AND SEMICONDUCTOR APPARATUS SHINETSU CHEMICAL CO (JP) 2017-01-11 EP disclosed
US-9541834-B2 Ionic thermal acid generators for low temperature applications ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2017-01-10 US disclosed
EP-3103831-A1 PHOTO-CURABLE RESIN COMPOSITION AND PHOTO-CURABLE DRY FILM USING THE SAME Shin-Etsu Chemical Co., Ltd. (JP) 2016-12-14 EP disclosed
US-20160357111-A1 COMPOSITIONS AND METHODS FOR PATTERN TREATMENT DOW GLOBAL TECHNOLOGIES LLC 2016-12-08 US disclosed
US-20160357112-A1 COMPOSITIONS AND METHODS FOR PATTERN TREATMENT DOW GLOBAL TECHNOLOGIES LLC 2016-12-08 US disclosed
US-20160357105-A1 PHOTO-CURABLE RESIN COMPOSITION AND PHOTO-CURABLE DRY FILM USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-12-08 US disclosed
US-20160357110-A1 PATTERN TREATMENT METHODS ROHM AND HAAS ELECTRONIC MATERIALS LLC 2016-12-08 US disclosed
US-20160357109-A1 PATTERN TREATMENT METHODS DOW GLOBAL TECHNOLOGIES LLC 2016-12-08 US disclosed
US-9505942-B2 Preparation of patterned or electrically-conductive articles EASTMAN KODAK COMPANY (US) 2016-11-29 US disclosed
US-9508553-B2 Photoresists and methods for use thereof ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2016-11-29 US disclosed
US-9502254-B2 Photoresists and methods for use thereof ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2016-11-22 US disclosed
US-20160334703-A1 PHOTOBASE GENERATORS AND PHOTORESIST COMPOSITIONS COMPRISING SAME DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2016-11-17 US disclosed
US-20160333212-A1 PHOTORESIST TOPCOAT COMPOSITIONS AND METHODS OF PROCESSING PHOTORESIST COMPOSITIONS ROHM & HAAS ELECT MAT (US) 2016-11-17 US disclosed
US-9494863-B2 Chemically amplified negative resist composition, photo-curable dry film, making method, patterning process, and electric/electronic part-protecting film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-15 US disclosed
US-20160320702-A1 PHOTORESIST COMPOSITIONS AND METHODS DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2016-11-03 US disclosed
EP-2980172-B1 SILICONE STRUCTURE-BEARING POLYMER, NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, PATTERNING PROCESS, AND ELECTRIC/ELECTRONIC PART-PROTECTING FILM SHINETSU CHEMICAL CO (JP) 2016-11-02 EP disclosed
US-9482945-B2 Photoresist compositions and methods of forming photolithographic patterns ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2016-11-01 US disclosed
US-9482948-B2 Photoresist compositions and methods of forming photolithographic patterns ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2016-11-01 US disclosed
EP-3082755-A1 METHODS FOR SHAPING FIBROUS MATERIAL AND TREATMENT COMPOSITIONS THEREFOR The Procter & Gamble Company (US) 2016-10-26 EP disclosed
EP-3082961-A1 METHODS FOR SHAPING FIBROUS MATERIAL AND TREATMENT COMPOSITIONS THEREFOR The Procter & Gamble Company (US) 2016-10-26 EP disclosed
EP-3082732-A1 METHODS FOR SHAPING FIBROUS MATERIAL AND TREATMENT COMPOSITIONS THEREFOR The Procter & Gamble Company (US) 2016-10-26 EP disclosed
EP-3082748-A1 METHODS FOR SHAPING FIBROUS MATERIAL AND TREATMENT COMPOSITIONS THEREFOR The Procter & Gamble Company (US) 2016-10-26 EP disclosed
EP-3082738-A1 METHODS FOR SHAPING FIBROUS MATERIAL AND TREATMENT COMPOSITIONS THEREFOR The Procter & Gamble Company (US) 2016-10-26 EP disclosed
US-9475763-B2 Photoresist comprising nitrogen-containing compound ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2016-10-25 US disclosed
US-9472438-B2 Wafer processing laminate, wafer processing member, temporary adhering material for processing wafer, and manufacturing method of thin wafer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-10-18 US disclosed
US-9458348-B2 Photoresist overcoat compositions and methods of forming electronic devices ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2016-10-04 US disclosed
US-9459534-B2 Photolithographic methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2016-10-04 US disclosed
US-20160284559-A1 POLYMER FOR RESIST UNDER LAYER FILM COMPOSITION, RESIST UNDER LAYER FILM COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-09-29 US disclosed
US-9447501-B2 Forming articles and devices with carbon-coated metal particles EASTMAN KODAK COMPANY (US) 2016-09-20 US disclosed
US-9448483-B2 Pattern shrink methods DOW GLOBAL TECHNOLOGIES LLC (US) 2016-09-20 US disclosed
US-9436082-B2 Compositions comprising base-reactive component and processes for photolithography ROHM AND HAAS ELECTRONICS MATERIALS LLC (US) 2016-09-06 US disclosed
US-9434852-B2 Photocurable compositions with dispersed carbon-coated metal particles EASTMAN KODAK COMPANY (US) 2016-09-06 US disclosed
US-9428606-B2 Polyfunctional epoxy compound NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-08-30 US disclosed
US-9428606-B2 Polyfunctional epoxy compound NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-08-30 US disclosed
EP-3059774-A1 ENHANCED TRANSISTORS EMPLOYING PHOTOACTIVE ORGANIC MATERIALS AND METHODS OF MANUFACTURING SAME Corning Incorporated (US) 2016-08-24 EP disclosed
EP-3056552-A1 ACTIVE ENERGY-RAY-CURABLE RESIN COMPOSITION FOR COATING ORGANIC OR INORGANIC SUBSTRATE Kaneka Corporation (JP) 2016-08-17 EP disclosed
US-9416289-B2 Active-energy-ray-curable inkjet ink composition, active-energy-ray-curable inkjet ink, and inkjet recording method Konica Minolta, Inc. (JP) 2016-08-16 US disclosed
US-9416289-B2 Active-energy-ray-curable inkjet ink composition, active-energy-ray-curable inkjet ink, and inkjet recording method Konica Minolta, Inc. (JP) 2016-08-16 US disclosed
EP-2138897-B1 CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN FUJITSU LTD (JP) 2016-08-03 EP disclosed
US-9400428-B2 Polymer compound, chemically amplified negative resist composition, photo-curable dry film and production method thereof, layered product, patterning process, and substrate SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-07-26 US disclosed
US-20160200877-A1 SILICONE SKELETON-CONTAINING POLYMER COMPOUND, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM AND METHOD FOR PRODUCING SAME, PATTERNING PROCESS, LAYERED PRODUCT, SUBSTRATE, AND SEMICONDUCTOR APPARATUS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-07-14 US disclosed
EP-3043206-A1 SILICONE SKELETON-CONTAINING POLYMER COMPOUND, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM AND METHOD FOR PRODUCING SAME, PATTERNING PROCESS, LAYERED PRODUCT, SUBSTRATE, AND SEMICONDUCTOR APPARATUS Shin-Etsu Chemical Co., Ltd. (JP) 2016-07-13 EP disclosed
US-20160187782-A1 PHOTOLITHOGRAPHIC METHODS DOW GLOBAL TECHNOLOGIES LLC 2016-06-30 US disclosed
US-20160187781-A1 METHOD FOR FORMING PATTERN USING ANTI-REFLECTIVE COATING COMPOSITION COMPRISING PHOTOACID GENERATOR DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2016-06-30 US disclosed
US-20160187778-A1 COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2016-06-30 US disclosed
US-9377689-B2 Silicone structure-bearing polymer, negative resist composition, photo-curable dry film, patterning process, and electric/electronic part-protecting film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-28 US disclosed
US-20160177020-A1 MODIFIED HYDROXY NAPHTHALENE NOVOLAK RESIN, PRODUCTION METHOD FOR MODIFIED HYDROXY NAPHTHALENE NOVOLAK RESIN, PHOTOSENSITIVE COMPOSITION, RESIST MATERIAL AND COATING DIC CORPORATION (JP) 2016-06-23 US disclosed
US-9366961-B2 Silicone structure-bearing polymer, resin composition, and photo-curable dry film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-06-14 US disclosed
US-9359517-B2 Non-aqueous compositions of dispersed carbon-coated metal particles EASTMAN KODAK COMPANY (US) 2016-06-07 US disclosed
US-20160152861-A1 ACTIVE ENERGY-RAY-CURABLE RESIN COMPOSITION FOR COATING ORGANIC OR INORGANIC SUBSTRATE KANEKA CORPORATION (JP) 2016-06-02 US disclosed
US-20160145467-A1 ACTIVE ENERGY RAY-CURABLE COMPOSITION KANEKA CORPORATION (JP) 2016-05-26 US disclosed
US-20160137874-A1 PHOTORESIST OVERCOAT COMPOSITIONS AND METHODS OF FORMING ELECTRONIC DEVICES U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2016-05-19 US disclosed
US-20160130462-A1 TOPCOAT COMPOSITIONS AND PHOTOLITHOGRAPHIC METHODS ROHM & HAAS ELECT MAT (US) 2016-05-12 US disclosed
US-20160122574-A1 PHOTORESIST OVERCOAT COMPOSITIONS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2016-05-05 US disclosed
US-20160124309-A1 PATTERN FORMATION METHODS ROHM & HAAS ELECT MAT (US) 2016-05-05 US disclosed
EP-2228400-B1 NOVEL POLYIMIDE SILICONE, PHOTOSENSITIVE RESIN COMPOSITION CONTAINING THE NOVEL POLYIMIDE SILICONE, AND METHOD FOR PATTERN FORMATION SHINETSU CHEMICAL CO (JP) 2016-04-27 EP disclosed
US-20160108269-A1 PHOTOCURABLE COMPOSITIONS WITH DISPERSED CARBON-COATED METAL PARTICLES BANK OF AMERICA, N.A., AS AGENT 2016-04-21 US disclosed
US-20160108270-A1 ARTICLES CONTAINING CARBON-COATED METAL PARTICLES BANK OF AMERICA, N.A., AS AGENT 2016-04-21 US disclosed
WO-2016060856-A1 DISPERSED CARBON-COATED METAL PARTICLES, ARTICLES AND USES EASTMAN KODAK COMPANY (US) 2016-04-21 WO disclosed
US-20160108526-A1 FORMING ARTICLES AND DEVICES WITH CARBON-COATED METAL PARTICLES BANK OF AMERICA, N.A., AS AGENT 2016-04-21 US disclosed
US-20160108266-A1 NON-AQUEOUS COMPOSITIONS OF DISPERSED CARBON-COATED METAL PARTICLES BANK OF AMERICA, N.A., AS AGENT 2016-04-21 US disclosed
US-20160109800-A1 PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2016-04-21 US disclosed
US-9316913-B2 Underlayer film-forming material for lithography, underlayer film for lithography, and pattern formation method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2016-04-19 US disclosed
US-20160103393-A1 PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2016-04-14 US disclosed
US-20160097974-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, MAKING METHOD, PATTERNING PROCESS, AND ELECTRIC/ELECTRONIC PART-PROTECTING FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-07 US disclosed
US-20160097973-A1 SILICONE SKELETON-CONTAINING POLYMER COMPOUND AND METHOD FOR PRODUCING SAME, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM AND METHOD FOR PRODUCING SAME, PATTERNING PROCESS, LAYERED PRODUCT, AND SUBSTRATE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-07 US disclosed
EP-3002633-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, MAKING METHOD, PATTERNING PROCESS, AND ELECTRIC/ELECTRONIC PART-PROTECTING FILM Shin-Etsu Chemical Co., Ltd. (JP) 2016-04-06 EP disclosed
EP-3002308-A1 SILICONE SKELETON-CONTAINING POLYMER COMPOUND AND METHOD FOR PRODUCING SAME, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM AND METHOD FOR PRODUCING SAME, PATTERNING PROCESS, LAYERED PRODUCT, AND SUBSTRATE Shin-Etsu Chemical Co., Ltd. (JP) 2016-04-06 EP disclosed
US-9298093-B2 Polymers, photoresist compositions and methods of forming photolithographic patterns ROHM AND HAAS ELECTRONIC MATERIALS LLC 2016-03-29 US disclosed
EP-2275490-B1 Coating compositions for use with an overcoated photoresist ROHM & HAAS ELECT MAT (US) 2016-03-23 EP disclosed
EP-1276012-B1 Resist patterning process SHINETSU CHEMICAL CO (JP) 2016-03-23 EP disclosed
WO-2016040216-A1 STRUCTURE MODIFYING APPARATUS THE PROCTER & GAMBLE COMPANY (US) 2016-03-17 WO disclosed
WO-2016040215-A1 STRUCTURE MODIFYING APPARATUS THE PROCTER & GAMBLE COMPANY (US) 2016-03-17 WO disclosed
EP-2842984-B1 POLYMER COMPOUND, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM AND PRODUCTION METHOD THEREOF, LAYERED PRODUCT, PATTERNING PROCESS, AND SUBSTRATE SHINETSU CHEMICAL CO (JP) 2016-03-16 EP disclosed
US-20160067669-A1 Structure Modifying Apparatus THE PROCTER & GAMBLE COMPANY 2016-03-10 US disclosed
US-20160067734-A1 Structure Modifying Apparatus THE PROCTER & GAMBLE COMPANY 2016-03-10 US disclosed
US-20160062232-A1 MULTIPLE-PATTERN FORMING METHODS DOW GLOBAL TECHNOLOGIES LLC 2016-03-03 US disclosed
EP-2479198-B1 AROMATIC HYDROCARBON RESIN AND COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY MITSUBISHI GAS CHEMICAL CO (JP) 2016-02-17 EP disclosed
US-20160041467-A1 PHOTOLITHOGRAPHIC METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2016-02-11 US disclosed
EP-2390722-B1 Methods of forming photolithographic patterns ROHM & HAAS ELECT MAT (US) 2016-02-10 EP disclosed
US-20160033869-A1 PATTERN SHRINK METHODS DOW GLOBAL TECHNOLOGIES LLC 2016-02-04 US disclosed
US-20160033865-A1 SILICONE STRUCTURE-BEARING POLYMER, NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, PATTERNING PROCESS, AND ELECTRIC/ELECTRONIC PART-PROTECTING FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-04 US disclosed
EP-2980172-A1 SILICONE STRUCTURE-BEARING POLYMER, NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, PATTERNING PROCESS, AND ELECTRIC/ELECTRONIC PART-PROTECTING FILM Shin-Etsu Chemical Co., Ltd. (JP) 2016-02-03 EP disclosed
US-9248693-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-02 US disclosed
US-9244352-B2 Coating compositions for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS, LLC (US) 2016-01-26 US disclosed
US-20160017083-A1 MODIFIED NOVOLAC PHENOL RESIN, RESIST MATERIAL, COATING FILM, AND RESIST PERMANENT FILM DAINIPPON INK & CHEMICALS (JP) 2016-01-21 US disclosed
US-20160009924-A1 COATING COMPOSITIONS SUITABLE FOR USE WITH AN OVERCOATED PHOTORESIST U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2016-01-14 US disclosed
US-9229319-B2 Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2016-01-05 US disclosed
US-20150376158-A1 COMPOUND, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PATTERN FORMING METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2015-12-31 US disclosed
US-20150376202-A1 COMPOUND, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PATTERN FORMING METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2015-12-31 US disclosed
EP-2743770-B1 UNDERLAYER FILM-FORMING MATERIAL FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL CO (JP) 2015-12-30 EP disclosed
WO-2015199988-A1 LATEX PRIMER COMPOSITION AND LATEX PRIMED SUBSTRATES EASTMAN KODAK COMPANY (US) 2015-12-30 WO disclosed
US-20150368805-A1 PREPARATION OF PATTERNED OR ELECTRICALLY-CONDUCTIVE ARTICLES BANK OF AMERICA, N.A., AS AGENT 2015-12-24 US disclosed
US-20150370284-A1 ELECTRONIC DEVICES AND PRECURSOR ARTICLES BANK OF AMERICA, N.A., AS AGENT 2015-12-24 US disclosed
US-20150368501-A1 LATEX PRIMER COMPOSITION AND LATEX PRIMED SUBSTRATES BANK OF AMERICA, N.A., AS AGENT 2015-12-24 US disclosed
US-20150367594-A1 PATTERNED AND PRIMED TRANSPARENT ARTICLES BANK OF AMERICA, N.A., AS AGENT 2015-12-24 US disclosed
EP-2955175-A1 COMPOUND, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PATTERN FORMATION METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2015-12-16 EP disclosed
EP-2955577-A1 COMPOUND, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMATION METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2015-12-16 EP disclosed
US-9212293-B2 Photoresist overcoat compositions and methods of forming electronic devices ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2015-12-15 US disclosed
US-20150353684-A1 HIGHLY SOLUBLE TRIS- (2, 3-EPOXYPROPYL)- ISOCYANURATE AND METHOD FOR PRODUCING SAME NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-12-10 US disclosed
US-20150353684-A1 HIGHLY SOLUBLE TRIS- (2, 3-EPOXYPROPYL)- ISOCYANURATE AND METHOD FOR PRODUCING SAME NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-12-10 US disclosed
US-20150353482-A1 PHOTORESIST COMPRISING NITROGEN-CONTAINING COMPOUND U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2015-12-10 US disclosed
US-9205628-B1 Patterned and primed transparent articles EASTMAN KODAK COMPANY (US) 2015-12-08 US disclosed
US-9207533-B2 Photopolymerizable compositions for electroless plating methods EASTMAN KODAK COMPANY (US) 2015-12-08 US disclosed
US-9209028-B2 Ion implantation methods ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2015-12-08 US disclosed
US-9188862-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the same FUJIFILM CORPORATION (JP) 2015-11-17 US disclosed
US-9188865-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2015-11-17 US disclosed
US-9188861-B2 Photopolymerizable compositions for electroless plating methods EASTMAN KODAK COMPANY (US) 2015-11-17 US disclosed
US-9188864-B2 Photoresist compositions and methods of forming photolithographic patterns ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2015-11-17 US disclosed
US-20150323869-A1 TOPCOAT COMPOSITIONS AND PHOTOLITHOGRAPHIC METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2015-11-12 US disclosed
US-9182669-B2 Copolymer with acid-labile group, photoresist composition, coated substrate, and method of forming an electronic device ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2015-11-10 US disclosed
US-9171720-B2 Hardmask surface treatment ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2015-10-27 US disclosed
US-20150293447-A1 SILICONE STRUCTURE-BEARING POLYMER, RESIN COMPOSITION, AND PHOTO-CURABLE DRY FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-10-15 US disclosed
US-9158191-B2 Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-10-13 US disclosed
US-9158198-B2 Photoresist compositions and methods of forming photolithographic patterns ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2015-10-13 US disclosed
US-9146467-B2 Coating compositions MERCK PATENT GMBH (DE) 2015-09-29 US disclosed
US-9140989-B2 Photosensitive organic particles NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-09-22 US disclosed
US-9140989-B2 Photosensitive organic particles NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-09-22 US disclosed
EP-2336827-B1 METHOD FOR PROVIDING AN ION-IMPLANTED SEMICONDUCTOR SUBSTRATE ROHM & HAAS ELECT MAT (US) 2015-09-16 EP disclosed
US-9136123-B2 Hardmask surface treatment ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2015-09-15 US disclosed
US-20150253661-A1 PHOTOPOLYMERIZABLE COMPOSITIONS FOR ELECTROLESS PLATING METHODS BANK OF AMERICA, N.A., AS AGENT 2015-09-10 US disclosed
US-9128379-B2 Photolithographic methods ROHM AND HAAS ELECTRONIC MATERIALS LLC 2015-09-08 US disclosed
EP-2293143-B1 Novel photoresist compositions ROHM & HAAS ELECT MAT (US) 2015-09-02 EP disclosed
US-9110373-B2 Phenolic resin and material for forming underlayer film for lithography MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2015-08-18 US disclosed
US-20150227041-A1 PHOTOPOLYMERIZABLE COMPOSITIONS FOR ELECTROLESS PLATING METHODS BANK OF AMERICA, N.A., AS AGENT 2015-08-13 US disclosed
CN-102194673-B Photoresist and using method thereof ROHM AND HAAS ELECTRONIC MATERIALS CO., LTD. (US) 2015-08-05 CN disclosed
US-20150212414-A1 IONIC THERMAL ACID GENERATORS FOR LOW TEMPERATURE APPLICATIONS ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2015-07-30 US disclosed
US-20150214056-A1 ION IMPLANTATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2015-07-30 US disclosed
US-9091919-B2 Silicone structure-bearing polymer, resin composition, and photo-curable dry film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-28 US disclosed
EP-2364847-B1 PHOTOCURABLE DRY FILM, METHOD FOR PREPARING SAME, PATTERNING METHOD AND FILM FOR PROTECTING ELECTRIC AND ELECTRONIC PARTS SHINETSU CHEMICAL CO (JP) 2015-07-22 EP disclosed
US-20150183912-A1 (METH)ACRYLATE DERIVATIVE, POLYMER AND PHOTORESIST COMPOSITION HAVING LACTONE STRUCTURE, AND METHOD FOR FORMING PATTERN BY USING IT NEC CORPORATION (JP) 2015-07-02 US disclosed
US-20150185615-A1 PHOTOLITHOGRAPHIC METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2015-07-02 US disclosed
US-20150185607-A1 PHOTORESIST OVERCOAT COMPOSITIONS ROHM AND HAAS ELECRONIC MATERIALS LLC 2015-07-02 US disclosed
US-20150185614-A1 ORGANIC BOTTOM ANTIREFLECTIVE COATING COMPOSITION FOR NANOLITHOGRAPHY DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2015-07-02 US disclosed
US-20150185616-A1 RESISTS FOR LITHOGRAPHY PIXELLIGENT TECHNOLOGIES, LLC 2015-07-02 US disclosed
WO-2015094789-A1 METHODS FOR SHAPING FIBROUS MATERIAL AND TREATMENT COMPOSITIONS THEREFOR THE PROCTER & GAMBLE COMPANY (US) 2015-06-25 WO disclosed
US-20150173478-A1 Methods for Shaping Fibrous Material and Treatment Compositions Therefor THE PROCTER & GAMBLE COMPANY 2015-06-25 US disclosed
WO-2015094787-A1 METHODS FOR SHAPING FIBROUS MATERIAL AND TREATMENT COMPOSITIONS THEREFOR THE PROCTER & GAMBLE COMPANY (US) 2015-06-25 WO disclosed
WO-2015094788-A1 METHODS FOR SHAPING FIBROUS MATERIAL AND TREATMENT COMPOSITIONS THEREFOR THE PROCTER & GAMBLE COMPANY (US) 2015-06-25 WO disclosed
WO-2015094784-A1 METHODS FOR SHAPING FIBROUS MATERIAL AND TREATMENT COMPOSITIONS THEREFOR THE PROCTER & GAMBLE COMPANY (US) 2015-06-25 WO disclosed
WO-2015094790-A1 METHODS FOR SHAPING FIBROUS MATERIAL AND TREATMENT COMPOSITIONS THEREFOR THE PROCTER & GAMBLE COMPANY (US) 2015-06-25 WO disclosed
US-20150174432-A1 Methods for Shaping Fibrous Material and Treatment Compositions Therefor THE PROCTER & GAMBLE COMPANY 2015-06-25 US disclosed
US-20150177614-A1 COPOLYMER WITH ACID-LABILE GROUP, PHOTORESIST COMPOSITION, COATED SUBSTRATE, AND METHOD OF FORMING AN ELECTRONIC DEVICE U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2015-06-25 US disclosed
US-20150177615-A1 PHOTOACID-GENERATING COPOLYMER AND ASSOCIATED PHOTORESIST COMPOSITION, COATED SUBSTRATE, AND METHOD OF FORMING AN ELECTRONIC DEVICE U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2015-06-25 US disclosed
US-20150174793-A1 Methods for Shaping Fibrous Material and Treatment Compositions Therefor THE PROCTER & GAMBLE COMPANY 2015-06-25 US disclosed
US-20150177613-A1 PHOTOACID-GENERATING COPOLYMER AND ASSOCIATED PHOTORESIST COMPOSITION, COATED SUBSTRATE, AND METHOD OF FORMING AN ELECTRONIC DEVICE U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2015-06-25 US disclosed
US-20150174035-A1 Methods for Shaping Fibrous Material and Treatment Compositions Therefor THE PROCTER & GAMBLE COMPANY 2015-06-25 US disclosed
US-20150173479-A1 Methods for Shaping Fibrous Material and Treatment Compositions Therefor THE PROCTER & GAMBLE COMPANY 2015-06-25 US disclosed
US-9063425-B2 Topcoat compositions and photolithographic methods ROHM AND HAAS ELECTRONIC MATERIALS LLC. (US) 2015-06-23 US disclosed
US-9063420-B2 Photoresist composition, coated substrate, and method of forming electronic device ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2015-06-23 US disclosed
US-20150159038-A1 PHOTORESIST OVERCOAT COMPOSITIONS AND METHODS OF FORMING ELECTRONIC DEVICES U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2015-06-11 US disclosed
US-20150090691-A1 MATERIAL FOR FORMING UNDERLAYER FILM LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PATTERN FORMING METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2015-04-02 US disclosed
CN-103282396-B Aromatic hydrocarbon resin, composition for forming lithographic underlayer film, and method for forming multilayer resist pattern MITSUBISHI GAS CHEMICAL CO 2015-03-18 CN disclosed
US-8975001-B2 Photoresist compositions and methods of forming photolithographic patterns ROHM AND HAAS ELECTRONICS MATERIALS LLC (US) 2015-03-10 US disclosed
EP-2842984-A1 Polymer compound, chemically amplified negative resist composition, photo-curable dry film and production method thereof, layered product, patterning process, and substrate Shin-Etsu Chemical Co., Ltd. (JP) 2015-03-04 EP disclosed
EP-2631259-B1 Silicone Structure-Bearing Polymer, Resin Composition, and Photo-Curable Dry Film SHINETSU CHEMICAL CO (JP) 2015-03-04 EP disclosed
US-8969483-B2 (Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION (JP) 2015-03-03 US disclosed
US-8968981-B2 Coating compositions for use with an overcoated photoresist U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2015-03-03 US disclosed
US-20150056545-A1 POLYMER COMPOUND, CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM AND PRODUCTION METHOD THEREOF, LAYERED PRODUCT, PATTERNING PROCESS, AND SUBSTRATE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-26 US disclosed
CN-104330956-A PHOTORESIST COMPOSITION, COATED SUBSTRATE, AND METHOD OF FORMING ELECTRONIC DEVICE ROHM & HAAS ELECT MAT 2015-02-04 CN disclosed
CN-103091978-B Methods of forming photolithographic patterns by negative tone development ROHM & HAAS ELECT MAT 2015-01-28 CN disclosed
CN-102681341-B Photoresist compositions and methods of forming photolithographic patterns ROHM & HAAS ELECT MAT 2015-01-28 CN disclosed
US-20150021289-A1 PHOTORESIST COMPOSITION, COATED SUBSTRATE, AND METHOD OF FORMING ELECTRONIC DEVICE U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2015-01-22 US disclosed
US-20150010857-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-01-08 US disclosed
US-8927190-B2 Photoresist comprising nitrogen-containing compound ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2015-01-06 US disclosed
US-8921031-B2 Photoresist overcoat compositions and methods of forming electronic devices ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2014-12-30 US disclosed
US-20140361415-A1 PHOTORESISTS AND METHODS FOR USE THEREOF U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2014-12-11 US disclosed
US-20140356785-A1 PHOTORESISTS COMPRISING CARBAMATE COMPONENT U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2014-12-04 US disclosed
CN-102681348-B Methods of forming photolithographic patterns ROHM & HAAS ELECT MAT 2014-11-12 CN disclosed
US-8883407-B2 Coating compositions suitable for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2014-11-11 US disclosed
US-8883710-B2 Compositions and methods incorporating photocatalysts THE PROCTER & GAMBLE COMPANY (US) 2014-11-11 US disclosed
EP-2799928-A1 PHOTOSENSITIVE RESIN COMPOSITION AND PROCESS FOR PRODUCING SEMICONDUCTOR ELEMENT Toray Industries, Inc. (JP) 2014-11-05 EP disclosed
EP-1403295-B1 Ester compounds, polymers, resist compositions and patterning process SHINETSU CHEMICAL CO (JP) 2014-10-22 EP disclosed
US-8865391-B2 Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-10-21 US disclosed
US-8852844-B2 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-10-07 US disclosed
US-20140295332-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE SAME FUJIFILM CORPORATION (JP) 2014-10-02 US disclosed
CN-102540703-B Compositions comprising base-reactive component and processes for photolithography ROHM AND HAAS ELECTRONIC MATERIALS CO., LTD. (US) 2014-10-01 CN disclosed
US-8846292-B2 Radiation-sensitive composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2014-09-30 US disclosed
US-8828651-B2 Positive-type photosensitive resin composition and cured film manufactured therefrom NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-09-09 US disclosed
US-8828651-B2 Positive-type photosensitive resin composition and cured film manufactured therefrom NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-09-09 US disclosed
US-20140246400-A1 RESIN HAVING FLUORENE STRUCTURE AND MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2014-09-04 US disclosed
US-20140242787-A1 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE TORAY INDUSTRIES, INC. (JP) 2014-08-28 US disclosed
US-8815754-B2 Photoresists and methods for use thereof ROHM AND HAAS ELECTRONICS MATERIALS LLC (US) 2014-08-26 US disclosed
US-8815989-B2 Resin composition for coating material KANEKA CORPORATION (JP) 2014-08-26 US disclosed
US-8802783-B2 2014-08-12 US disclosed
US-8802798-B2 (Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION (JP) 2014-08-12 US disclosed
EP-2762513-A1 RESIN HAVING FLUORENE STRUCTURE AND UNDERLAYER FILM-FORMING MATERIAL FOR LITHOGRAPHY Mitsubishi Gas Chemical Company, Inc. (JP) 2014-08-06 EP disclosed
EP-1099983-B1 Chemically amplified positive resist composition and patterning method SHINETSU CHEMICAL CO (JP) 2014-08-06 EP disclosed
US-20140212816-A1 PHOTOLITHOGRAPHIC METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2014-07-31 US disclosed
US-8790867-B2 Methods of forming photolithographic patterns by negative tone development ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2014-07-29 US disclosed
US-20140202632-A1 HARDMASK SURFACE TREATMENT ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2014-07-24 US disclosed
US-20140206201-A1 HARDMASK SURFACE TREATMENT ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2014-07-24 US disclosed
CN-103941547-A Hardmask Surface Treatment ROHM & HAAS ELECT MAT 2014-07-23 CN disclosed
CN-103941538-A Hardmask surface treatment ROHM & HAAS ELECT MAT 2014-07-23 CN disclosed
US-8778597-B2 Long-chain alkylene-containing curable epoxy resin composition NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-07-15 US disclosed
US-8778597-B2 Long-chain alkylene-containing curable epoxy resin composition NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-07-15 US disclosed
EP-1788433-B1 Silicon-containing film forming composition and substrate processing method SHINETSU CHEMICAL CO (JP) 2014-07-09 EP disclosed
CN-103915331-A Ion injection method ROHM & HAAS ELECT MAT 2014-07-09 CN disclosed
US-8771917-B2 Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns ROHM AND HAAS ELECTRONICS MATERIALS LLC (US) 2014-07-08 US disclosed
US-20140186776-A1 PHENOLIC RESIN AND MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2014-07-03 US disclosed
EP-2743770-A1 UNDERLAYER FILM-FORMING MATERIAL FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMATION METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2014-06-18 EP disclosed
EP-2172807-B1 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process SHINETSU CHEMICAL CO (JP) 2014-06-18 EP disclosed
CN-103852973-A Ionic thermal acid generators for low temperature applications ROHM & HAAS ELECT MAT 2014-06-11 CN disclosed
EP-2172808-B1 Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process SHINETSU CHEMICAL CO (JP) 2014-06-04 EP disclosed
US-8741553-B2 Aromatic hydrocarbon resin, underlayer film forming composition for lithography, and method for forming multilayer resist pattern MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2014-06-03 US disclosed
US-8729148-B2 Photocurable dry film, method for preparing same, patterning method and film for protecting electric and electronic parts SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-05-20 US disclosed
EP-2727578-A2 Compositions and methods incorporating photocatalysts The Procter and Gamble Company (US) 2014-05-07 EP disclosed
US-8715905-B2 Silphenylene-containing photocurable composition, pattern formation method using same, and optical semiconductor element obtained using the method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-05-06 US disclosed
US-20140120470-A1 PHOTORESISTS COMPRISING IONIC COMPOUND ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2014-05-01 US disclosed
US-20140120469-A1 THERMAL ACID GENERATORS FOR USE IN PHOTORESIST ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2014-05-01 US disclosed
US-8697338-B2 Photolithographic methods ROHM AND HAAS ELECTRONICS MATERIALS LLC (US) 2014-04-15 US disclosed
US-8673537-B2 Photo-curable resin composition, pattern forming method and substrate protecting film, and film-shaped adhesive and adhesive sheet using said composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-03-18 US disclosed
US-8652750-B2 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-18 US disclosed
US-8652267-B2 Coated-type silicon-containing film stripping process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-18 US disclosed
US-8652755-B2 Positive photosensitive resin composition and lyophobic film NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-02-18 US disclosed
US-8652755-B2 Positive photosensitive resin composition and lyophobic film NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-02-18 US disclosed
US-20140045119-A1 PHOTOSENSITIVE ORGANIC PARTICLES NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-02-13 US disclosed
US-20140045119-A1 PHOTOSENSITIVE ORGANIC PARTICLES NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-02-13 US disclosed
US-20140038102-A1 PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2014-02-06 US disclosed
US-20130344439-A1 PHOTORESISTS COMPRISING AMIDE COMPONENT U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2013-12-26 US disclosed
US-8614050-B2 Polymers, photoresist compositions and methods of forming photolithographic patterns ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2013-12-24 US disclosed
US-8609013-B2 Method of fabricating a microfabricated structure SAMSUNG ELECTRONICS CO., LTD. (KR) 2013-12-17 US disclosed
EP-2196858-B1 Coated-type silicon-containing film stripping process SHINETSU CHEMICAL CO (JP) 2013-12-04 EP disclosed
US-8592134-B2 Composition for forming base film for lithography and method for forming multilayer resist pattern MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2013-11-26 US disclosed
US-20130307913-A1 ACTIVE-ENERGY-RAY-CURABLE INKJET INK COMPOSITION, ACTIVE-ENERGY-RAY-CURABLE INKJET INK, AND INKJET RECORDING METHOD Konica Minolta, Inc. (JP) 2013-11-21 US disclosed
EP-2219076-B1 COMPOSITION FOR FORMING BASE FILM FOR LITHOGRAPHY AND METHOD FOR FORMING MULTILAYER RESIST PATTERN MITSUBISHI GAS CHEMICAL CO (JP) 2013-11-20 EP disclosed
CN-102346371-B Photoresist compositions and methods of forming photolithographic patterns ROHM & HAAS ELECT MAT 2013-11-20 CN disclosed
US-8586289-B2 Aromatic hydrocarbon resin and composition for forming underlayer film for lithography MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2013-11-19 US disclosed
US-20130302735-A1 MONOMERS, POLYMERS AND PHOTORESIST COMPOSITIONS ROHM & HAAS ELECT MAT (US) 2013-11-14 US disclosed
EP-2660257-A1 AROMATIC HYDROCARBON RESIN, COMPOSITION FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, AND METHOD FOR FORMING MULTILAYER RESIST PATTERN Mitsubishi Gas Chemical Company, Inc. (JP) 2013-11-06 EP disclosed
US-20130284698-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-10-31 US disclosed
EP-2657766-A1 Patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2013-10-30 EP disclosed
US-20130280655-A1 AROMATIC HYDROCARBON RESIN, UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY, AND METHOD FOR FORMING MULTILAYER RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2013-10-24 US disclosed
US-20130274433-A1 POLYFUNCTIONAL EPOXY COMPOUND NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-10-17 US disclosed
US-20130274433-A1 POLYFUNCTIONAL EPOXY COMPOUND NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-10-17 US disclosed
US-8557144-B2 Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head FUJITSU LIMITED (JP) 2013-10-15 US disclosed
US-8546587-B2 Method for producing acrylate derivative, acrylate derivative, and intermediate thereof KURARAY CO., LTD. (JP) 2013-10-01 US disclosed
US-20130244180-A1 PHOTORESIST OVERCOAT COMPOSITIONS AND METHODS OF FORMING ELECTRONIC DEVICES ROHM AND HAAS ELECTRONIC MATERIAL LLC (US) 2013-09-19 US disclosed
US-20130244178-A1 PHOTORESISTS COMPRISING MULTI-AMIDE COMPONENT ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2013-09-19 US disclosed
US-20130244438-A1 PHOTOLITHOGRAPHIC METHODS ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2013-09-19 US disclosed
US-8535872-B2 Thermally cured underlayer for lithographic application FUJIFILM ELECTRONIC MATERIALS, U.S.A., INC. (US) 2013-09-17 US disclosed
US-20130236833-A1 COATING COMPOSITIONS AZ ELECTRONIC MATERIALS USA CORP. (US) 2013-09-12 US disclosed
EP-1953183-B1 Silphenylene-bearing polymer, photo-curable resin composition, patterning process, and substrate circuit protective film SHINETSU CHEMICAL CO (JP) 2013-09-04 EP disclosed
US-8524440-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-09-03 US disclosed
EP-2631259-A1 Silicone Structure-Bearing Polymer, Resin Composition, and Photo-Curable Dry Film Shin-Etsu Chemical Co., Ltd. (JP) 2013-08-28 EP disclosed
US-8501383-B2 Coating compositions for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2013-08-06 US disclosed
US-20130196114-A1 SILICONE STRUCTURE-BEARING POLYMER, RESIN COMPOSITION, AND PHOTO-CURABLE DRY FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-01 US disclosed
US-8492562-B2 (Meth)acrylate derivative, intermediate thereof, and polymer compound KURARAY CO., LTD. (JP) 2013-07-23 US disclosed
US-8486606-B2 Acrylate derivative, haloester derivative, polymer compound and photoresist composition KURARAY CO., LTD. (JP) 2013-07-16 US disclosed
EP-2333015-B1 Photo-curable resin composition, pattern forming method and substrate protecting film, and film-shaped adhesive and adhesive sheet using said composition SHINETSU CHEMICAL CO (JP) 2013-07-10 EP disclosed
US-8481244-B2 Epoxy-containing polymer, photo-curable resin composition, patterning process, and electric/electronic part protective film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-07-09 US disclosed
US-8475982-B2 Charge-transporting compound, electrophotographic photoreceptor, image-forming apparatus, and process cartridge FUJI XEROX CO., LTD. (JP) 2013-07-02 US disclosed
EP-2472328-B1 Coating compositions for use with an overcoated photoresist ROHM & HAAS ELECT MAT (US) 2013-06-19 EP disclosed
US-20130149493-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, MAKING METHOD, PATTERN FORMING PROCESS, AND ELECTRIC/ELECTRONIC PART PROTECTING FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-06-13 US disclosed
US-20130149645-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, MAKING METHOD, PATTERN FORMING PROCESS, AND ELECTRIC/ELECTRONIC PART PROTECTING FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-06-13 US disclosed
EP-2602661-A1 Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film Shin-Etsu Chemical Co., Ltd. (JP) 2013-06-12 EP disclosed
EP-2602660-A1 Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film Shin-Etsu Chemical Co., Ltd. (JP) 2013-06-12 EP disclosed
EP-2472329-B1 Coating compositions for use with an overcoated photoresist ROHM & HAAS ELECT MAT (US) 2013-06-05 EP disclosed
US-8454152-B2 Ink jet recording device and ink jet recording method KONICA MINOLTA HOLDINGS, INC. (JP) 2013-06-04 US disclosed
US-8454152-B2 Ink jet recording device and ink jet recording method KONICA MINOLTA HOLDINGS, INC. (JP) 2013-06-04 US disclosed
US-8455176-B2 Coating composition AZ ELECTRONIC MATERIALS USA CORP. (US) 2013-06-04 US disclosed
US-20130136897-A1 RESISTS FOR LITHOGRAPHY PIXELLIGENT TECHNOLOGIES, LLC (US) 2013-05-30 US disclosed
US-20130122419-A1 (METH)ACRYLATE DERIVATIVE, POLYMER AND PHOTORESIST COMPOSITION HAVING LACTONE STRUCTURE, AND METHOD FOR FORMING PATTERN BY USING IT NEC CORPORATION (JP) 2013-05-16 US disclosed
US-8439480-B2 Ink jet recording apparatus, and ink jet recording method KONICA MINOLTA HOLDINGS, INC. (JP) 2013-05-14 US disclosed
US-8439480-B2 Ink jet recording apparatus, and ink jet recording method KONICA MINOLTA HOLDINGS, INC. (JP) 2013-05-14 US disclosed
US-20130115553-A1 TOPCOAT COMPOSITIONS AND PHOTOLITHOGRAPHIC METHODS ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2013-05-09 US disclosed
US-20130115559-A1 METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS BY NEGATIVE TONE DEVELOPMENT ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2013-05-09 US disclosed
US-8435718-B2 Upper layer-forming composition and photoresist patterning method JSR CORPORATION (JP) 2013-05-07 US disclosed
US-20130105440-A1 NANOCOMPOSITE NEGATIVE PHOTOSENSITIVE COMPOSITION AND USE THEREOF AZ ELECTRONIC MATERIALS USA CORP. (US) 2013-05-02 US disclosed
US-8431722-B2 Acrylate ester derivatives and polymer compounds KURARAY CO., LTD. (JP) 2013-04-30 US disclosed
US-8426107-B2 Positive-type photosensitive composition TOKYO OHKA KOGYO CO., LTD. (JP) 2013-04-23 US disclosed
US-8426093-B2 photosensitive layer has a charge transferring compound having hole transportation ability; hardening by heating, stable electrical properties FUJI XEROX CO., LTD. (JP) 2013-04-23 US disclosed
US-8403453-B2 Method for forming inkjet image while flowing the ink in an ink chamber KONICA MINOLTA HOLDINGS, INC. (JP) 2013-03-26 US disclosed
EP-1942375-B1 Inkjet printer head comprising photosensitive polymer complex containing silver nanoparticles and method of preparing the photosensitive polymer complex SAMSUNG ELECTRONICS CO LTD (KR) 2013-02-27 EP disclosed
US-8383316-B2 Multi-step; reversible; provide exposure quadratically dependant on intensity of light; semiconductors PIXELLIGENT TECHNOLOGIES, LLC (US) 2013-02-26 US disclosed
US-8383317-B2 Surface treatment of interpenetrating polymer networkcarbon tubes; photolithography; modifying surfaces of carbon nanotubes with polymerizable functional groups such as oxirane and anhydride groups; heat curing; negative patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2013-02-26 US disclosed
US-8378016-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-02-19 US disclosed
US-8362169-B2 Acrylate ester derivatives and polymer compounds KURARAY CO., LTD. (JP) 2013-01-29 US disclosed
US-20130011783-A1 MONOMERS, POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS DOW GLOBAL TECHNOLOGIES LLC (US) 2013-01-10 US disclosed
EP-1788436-B1 Rework process for photoresist film SHINETSU CHEMICAL CO (JP) 2013-01-09 EP disclosed
US-8349916-B2 Actinic energy radiation curable ink-jet ink, ink-jet recording method, and printed matter KONICA MINOLTA IJ TECHNOLOGIES, INC. (JP) 2013-01-08 US disclosed
US-8349780-B2 Compositions and methods incorporating photocatalysts THE PROCTER & GAMBLE COMPANY (US) 2013-01-08 US disclosed
US-20130004894-A1 UNDER COAT FILM MATERIAL AND METHOD OF FORMING MULTILAYER RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2013-01-03 US disclosed
US-20130004901-A1 COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2013-01-03 US disclosed
US-20130004893-A1 COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2013-01-03 US disclosed
US-20130005990-A1 METHOD FOR PRODUCING ACRYLATE DERIVATIVE, ACRYLATE DERIVATIVE, AND INTERMEDIATE THEREOF KURARAY CO., LTD. (JP) 2013-01-03 US disclosed
US-8338072-B2 Resist composition, resist pattern forming process, and method for manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-12-25 US disclosed
EP-2535768-A1 UNDERLAYER FILM MATERIAL, AND METHOD FOR FORMATION OF MULTILAYER RESIST PATTERN Mitsubishi Gas Chemical Company, Inc. (JP) 2012-12-19 EP disclosed
US-20120316349-A1 ACRYLATE ESTER DERIVATIVES AND POLYMER COMPOUNDS KURARAY CO., LTD. (JP) 2012-12-13 US disclosed
US-8329376-B2 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-11 US disclosed
US-8329377-B2 Imide compound and chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-12-11 US disclosed
US-20120308927-A1 POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAHIC PATTERNS DOW GLOBAL TECHNOLOGIES LLC (US) 2012-12-06 US disclosed
EP-1225479-B1 A chemical amplifying type positive resist composition SUMITOMO CHEMICAL CO (JP) 2012-12-05 EP disclosed
US-20120295199-A1 LONG-CHAIN ALKYLENE-CONTAINING CURABLE EPOXY RESIN COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-11-22 US disclosed
US-8314258-B2 Method for producing acrylate derivative, acrylate derivative, and intermediate thereof KURARAY CO., LTD. (JP) 2012-11-20 US disclosed
US-8313890-B2 Antireflective coating composition, antireflective coating, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-20 US disclosed
US-20120288794-A1 POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS DOW GLOBAL TECHNOLOGIES LLC (US) 2012-11-15 US disclosed
US-20120283350-A1 RESIN COMPOSITION FOR COATING MATERIAL KANEKA CORPORATION (JP) 2012-11-08 US disclosed
EP-1813985-B1 Antireflection film composition, substrate, and pattering process SHINETSU CHEMICAL CO (JP) 2012-10-31 EP disclosed
EP-2510398-A2 COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY Rohm and Haas Electronic Materials LLC (US) 2012-10-17 EP disclosed
US-8288072-B2 Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-16 US disclosed
EP-2499208-A1 COMPOSITIONS AND METHODS INCORPORATING PHOTOCATALYSTS The Procter & Gamble Company (US) 2012-09-19 EP disclosed
US-8268540-B2 Method of manufacturing light receiving device SUMITOMO BAKELITE COMPANY, LTD. (JP) 2012-09-18 US disclosed
US-8263308-B2 Polyimide silicone, photosensitive resin composition containing the novel polyimide silicone, and method for pattern formation SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-09-11 US disclosed
US-20120219901-A1 PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2012-08-30 US disclosed
US-20120219902-A1 PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2012-08-30 US disclosed
EP-2492749-A1 Photoresist compositions and methods of forming photolithographic patterns Rohm and Haas Electronic Materials LLC (US) 2012-08-29 EP disclosed
EP-2492750-A1 Photoresist compositions and methods of forming photolithographic patterns Rohm and Haas Electronic Materials LLC (US) 2012-08-29 EP disclosed
US-8247166-B2 Double patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-21 US disclosed
US-8241830-B2 Positive resist composition and a pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-08-14 US disclosed
WO-2012104262-A1 PHOTORESPONSIVE MICROCAPSULES AND COMPOSITIONS CONTAINING SAME UNIVERSIDAD DE SEVILLA (ES) 2012-08-09 WO disclosed
US-20120199957-A1 PHOTORESISTS AND METHODS FOR USE THEREOF ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2012-08-09 US disclosed
EP-2479198-A1 AROMATIC HYDROCARBON RESIN AND COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY Mitsubishi Gas Chemical Company, Inc. (JP) 2012-07-25 EP disclosed
EP-2477215-A2 Resin composition, embedding material, insulating layer and semiconductor device Sumitomo Bakelite Company Limited (JP) 2012-07-18 EP disclosed
US-20120178871-A1 THERMALLY CURED UNDERLAYER FOR LITHOGRAPHIC APPLICATION DE BINOD B (US) 2012-07-12 US disclosed
US-20120178023-A1 (METH)ACRYLATE DERIVATIVE, POLYMER AND PHOTORESIST COMPOSITION HAVING LACTONE STRUCTURE, AND METHOD FOR FORMING PATTERN BY USING IT NEC CORPORATION 2012-07-12 US disclosed
US-20120171626-A1 COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2012-07-05 US disclosed
US-20120171611-A1 AROMATIC HYDROCARBON RESIN AND COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2012-07-05 US disclosed
US-20120171617-A1 POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS DOW GLOBAL TECHNOLOGIES LLC (US) 2012-07-05 US disclosed
EP-2472324-A1 Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns Rohm and Haas Electronic Materials LLC (US) 2012-07-04 EP disclosed
EP-2472329-A1 Coating compositions for use with an overcoated photoresist Rohm and Haas Electronic Materials LLC (US) 2012-07-04 EP disclosed
EP-2472325-A1 Polymers, photoresist compositions and methods of forming photolithographic patterns Rohm and Haas Electronic Materials LLC (US) 2012-07-04 EP disclosed
EP-2472326-A1 Polymers, photoresist compositions and methods of forming photolithographic patterns Rohm and Haas Electronic Materials LLC (US) 2012-07-04 EP disclosed
EP-2472328-A1 Coating compositions for use with an overcoated photoresist Rohm and Haas Electronic Materials LLC (US) 2012-07-04 EP disclosed
EP-2472320-A2 Compositions comprising base-reactive component and processes for photolithography Rohm and Haas Electronic Materials LLC (US) 2012-07-04 EP disclosed
EP-2472327-A1 Photoresists and methods for use thereof Rohm and Haas Electronic Materials LLC (US) 2012-07-04 EP disclosed
US-8211957-B2 Negative pattern of carbon nanotubes and carbon nanotube composite comprising surface-modified carbon nanotubes SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-07-03 US disclosed
EP-2467122-A2 PHOTORESPONSIVE SUNSCREEN COMPOSITION Blueshift Pharma GmbH (CH) 2012-06-27 EP disclosed
US-8206888-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2012-06-26 US disclosed
US-20120148647-A1 Photoresponsive Sunscreen Composition BLUESHIFT PHARMA GMBH (CH) 2012-06-14 US disclosed
US-8198016-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-12 US disclosed
EP-2461213-A1 Polymers, photoresist compositions and methods of forming photolithographic patterns Rohm and Haas Electronic Materials LLC (US) 2012-06-06 EP disclosed
US-20120122030-A1 COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY DOW GLOBAL TECHNOLOGIES LLC (US) 2012-05-17 US disclosed
EP-2453308-A1 Compositions comprising base-reactive component and processes for photolithography Rohm and Haas Electronic Materials LLC (US) 2012-05-16 EP disclosed
US-8178284-B2 Method of forming pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2012-05-15 US disclosed
US-8173350-B2 Oxime compound and resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-05-08 US disclosed
EP-1950610-B1 IMMERSION LITHOGRAPHIC COMPOSITION FOR FORMING UPPER FILM AND METHOD FOR FORMING PHOTORESIST PATTERN JSR CORP (JP) 2012-05-02 EP disclosed
US-8168371-B2 Positive photosensitive resin composition NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-05-01 US disclosed
US-8158338-B2 Resist sensitizer MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2012-04-17 US disclosed
US-8153346-B2 Hydroxyl containing polymer, amino crosslinking agent and thermal acid generator; undercoating for multilayer lithography material FUJIFILM ELECTRONIC MATERIALS, U.S.A., INC. (US) 2012-04-10 US disclosed
US-20120077120-A1 PHOTORESISTS COMPRISING MULTI-AMIDE COMPONENT ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2012-03-29 US disclosed
US-20120064456-A1 PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS DOW GLOBAL TECHNOLOGIES LLC (US) 2012-03-15 US disclosed
EP-2428843-A1 Photoresist compositions and methods of forming photolithographic patterns Rohm and Haas Electronic Materials LLC (US) 2012-03-14 EP disclosed
EP-2428842-A1 Photoresists comprising multi-amide component Rohm and Haas Electronic Materials LLC (US) 2012-03-14 EP disclosed
EP-2424947-A1 COMPOSITIONS AND METHODS INCORPORATING PHOTOCATALYSTS The Procter & Gamble Company (US) 2012-03-07 EP disclosed
US-8129100-B2 Double patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-06 US disclosed
US-8129086-B2 Polymerizable compound, polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-06 US disclosed
US-8129099-B2 Double patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-06 US disclosed
US-8119751-B2 2012-02-21 US disclosed
US-8110339-B2 Multi-tone resist compositions MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2012-02-07 US disclosed
US-8110336-B2 Resin and chemically amplified resist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-02-07 US disclosed
US-8110334-B2 Radiation-sensitive composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2012-02-07 US disclosed
US-20120028198-A1 UPPER LAYER-FORMING COMPOSITION AND PHOTORESIST PATTERNING METHOD JSR CORPORATION (JP) 2012-02-02 US disclosed
US-8105760-B2 Patterning process and pattern surface coating composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-31 US disclosed
US-8105764-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-31 US disclosed
EP-2305754-B1 Epoxy-containing polymer photo-curable resin composition, patterning process and electric/electronic part protective film SHINETSU CHEMICAL CO (JP) 2012-01-25 EP disclosed
US-8090287-B2 Charging member cleaning unit, method of producing charging member cleaning unit, charging device, process cartridge and image forming apparatus FUJI XEROX CO., LTD. (JP) 2012-01-03 US disclosed
US-8088554-B2 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD (JP) 2012-01-03 US disclosed
US-8090298-B2 Electrostatic charging member, electrostatic charging device, process cartridge and image forming apparatus FUJI XEROX CO., LTD. (JP) 2012-01-03 US disclosed
US-8071270-B2 Polyhydric compound and chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-12-06 US disclosed
EP-2390722-A1 Photoresist compositions and methods of forming photolithographic patterns Rohm and Haas Electronic Materials LLC (US) 2011-11-30 EP disclosed
EP-2387735-A1 NONPOLYMERIC BINDERS FOR SEMICONDUCTOR SUBSTRATE COATINGS FujiFilm Electronic Materials USA, Inc. (US) 2011-11-23 EP disclosed
US-8057982-B2 Monomer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-11-15 US disclosed
EP-2063319-B1 Metal oxide-containing film-forming composition, multilayer resist and method of formation of pattern in a substrate SHINETSU CHEMICAL CO (JP) 2011-11-02 EP disclosed
US-8048611-B2 Polyorganosiloxane, resin composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-11-01 US disclosed
US-20110254133-A1 PHOTORESISTS AND METHODS FOR USE THEREOF ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2011-10-20 US disclosed
US-20110255061-A1 COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. (US) 2011-10-20 US disclosed
US-20110257693-A1 HARD TISSUE ANCHORS AND DELIVERY DEVICES TC1 LLC 2011-10-20 US disclosed
US-20110254140-A1 PHOTORESISTS AND METHODS FOR USE THEREOF ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2011-10-20 US disclosed
US-20110256481-A1 PHOTORESISTS AND METHODS OF USE THEREOF ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2011-10-20 US disclosed
US-8037621-B2 Article of footwear including a woven strap system NIKE, INC. (US) 2011-10-18 US disclosed
US-8029974-B2 Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-04 US disclosed
US-8026038-B2 Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-27 US disclosed
US-20110223535-A1 PHOTORESIST COMPRISING NITROGEN-CONTAINING COMPOUND ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2011-09-15 US disclosed
EP-2364847-A1 Photocurable dry film, method for preparing same, patterning method and film for protecting electric and electronic parts Shin-Etsu Chemical Co., Ltd. (JP) 2011-09-14 EP disclosed
EP-1645909-B1 Photo-curable resin composition comprising a polyimide, a process for forming a pattern therewith, and a substrate protecting film SHINETSU CHEMICAL CO (JP) 2011-08-24 EP disclosed
EP-1741705-B1 Fluorinated cyclic structure-bearing silicon compounds and silicone resins, resist compositions using the same, and patterning process SHINETSU CHEMICAL CO (JP) 2011-08-24 EP disclosed
US-7999354-B2 Resin composition, filling material, insulating layer and semiconductor device SUMITOMO BAKELITE COMPANY, LTD. (JP) 2011-08-16 US disclosed
US-20110196122-A1 (METH)ACRYLATE DERIVATIVE, POLYMER AND PHOTORESIST COMPOSITION HAVING LACTONE STRUCTURE, AND METHOD FOR FORMING PATTERN BY USING IT NEC CORPORATION 2011-08-11 US disclosed
EP-2348360-A1 Photoresist comprising nitrogen-containing compound Rohm and Haas Electronic Materials LLC (US) 2011-07-27 EP disclosed
US-20110165519-A1 RESIN SUITABLE FOR AN ACID GENERATOR AND A CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION CONTAINING THE SAME ANDO NOBUO 2011-07-07 US disclosed
US-20110165387-A1 ACTINIC ENERGY RADIATION CURABLE INK-JET INK, IMAGE FORMING METHOD USING THE SAME, AND PRINTED MATTER OBTAINED THEREBY KONICA MINOLTA IJ TECHNOLOGIES, INC. (JP) 2011-07-07 US disclosed
US-20110165513-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY LTD (JP) 2011-07-07 US disclosed
US-7972763-B2 Patterns having high resolution; used for semiconductor microfabrication employing a lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-07-05 US disclosed
EP-2336829-A1 Photoresists and methods for use thereof Rohm and Haas Electronic Materials LLC (US) 2011-06-22 EP disclosed
EP-2336828-A2 Photoresists and methods for use thereof Rohm and Haas Electronic Materials LLC (US) 2011-06-22 EP disclosed
EP-2336827-A1 Photoresists and methods for use thereof Rohm and Haas Electronic Materials LLC (US) 2011-06-22 EP disclosed
US-20110143103-A1 PHOTO-CURABLE RESIN COMPOSITION, PATTERN FORMING METHOD AND SUBSTRATE PROTECTING FILM, AND FILM-SHAPED ADHESIVE AND ADHESIVE SHEET USING SAID COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-06-16 US disclosed
US-20110141187-A1 METHOD FOR FORMING INKJET IMAGE KONICA MINOLTA HOLDINGS, INC. (JP) 2011-06-16 US disclosed
US-20110143092-A1 PHOTOCURABLE DRY FILM, METHOD FOR PREPARING SAME, PATTERNING METHOD AND FILM FOR PROTECTING ELECTRIC AND ELECTRONIC PARTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-06-16 US disclosed
WO-2011072307-A2 COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. (US) 2011-06-16 WO disclosed
EP-2333015-A2 Photo-curable resin composition, pattern forming method and substrate protecting film, and film-shaped adhesive and adhesive sheet using said composition Shin-Etsu Chemical Co., Ltd. (JP) 2011-06-15 EP disclosed
US-20110117497-A1 ACRYLATE DERIVATIVE, HALOESTER DERIVATIVE, POLYMER COMPOUND AND PHOTORESIST COMPOSITION KURARAY CO., LTD. (JP) 2011-05-19 US disclosed
US-20110114108-A1 Compositions and Methods Incorporating Photocatalysts THE PROCTER & GAMBLE COMPANY 2011-05-19 US disclosed
WO-2011060110-A1 COMPOSITIONS AND METHODS INCORPORATING PHOTOCATALYSTS THE PROCTER & GAMBLE COMPANY (US) 2011-05-19 WO disclosed
US-20110101503-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION (JP) 2011-05-05 US disclosed
US-20110096132-A1 INK JET RECORDING DEVICE AND INK JET RECORDING METHOD KONICA MINOLTA HOLDINGS, INC. (JP) 2011-04-28 US disclosed
EP-2112188-B1 Polyorganosiloxane, resin composition, and patterning process SHINETSU CHEMICAL CO (JP) 2011-04-27 EP disclosed
US-7932334-B2 Resin suitable for an acid generator SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-04-26 US disclosed
US-7923195-B2 Positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-04-12 US disclosed
US-7923110-B2 Metal nanoparticle having a self-assembled monolayer on its surface, and formation of conductive pattern using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-04-12 US disclosed
EP-2305754-A1 Epoxy-containing polymer photo-curable resin composition, patterning process and electric/electronic part protective film Shin-Etsu Chemical Co., Ltd. (JP) 2011-04-06 EP disclosed
US-20110076465-A1 EPOXY-CONTAINING POLYMER, PHOTO-CURABLE RESIN COMPOSITION, PATTERNING PROCESS, AND ELECTRIC/ELECTRONIC PART PROTECTIVE FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-03-31 US disclosed
US-7915467-B2 layer contains a cyclic olefin resin having an epoxy group and a photoacid generator; low stress properties and adhesion; prevent breakage of the semiconductor wafer in a process for grinding the backside to make them thinner SUMITOMO BAKELITE COMPANY, LTD. (JP) 2011-03-29 US disclosed
US-7910283-B2 Silicon-containing antireflective coating forming composition, silicon-containing antireflective coating, substrate processing intermediate, and substrate processing method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-03-22 US disclosed
US-20110064913-A1 POSITIVE-TYPE PHOTOSENSITIVE COMPOSITION TOKYO OHKA KOGYO CO., LTD (JP) 2011-03-17 US disclosed
US-20110060112-A1 ACRYLATE ESTER DERIVATIVES AND POLYMER COMPOUNDS KURARAY CO., LTD. (JP) 2011-03-10 US disclosed
EP-2293143-A2 Novel resins and photoresist compositions comprising the same Rohm and Haas Electronic Materials, L.L.C. (US) 2011-03-09 EP disclosed
US-7896485-B2 Light cure of cationic ink on acidic substrates GERBER SCIENTIFIC INTERNATIONAL, INC. (US) 2011-03-01 US disclosed
WO-2011020928-A2 PHOTORESPONSIVE SUNSCREEN COMPOSITION BLUESHIFT PHARMA GMBH (CH) 2011-02-24 WO disclosed
US-7893293-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-22 US disclosed
US-20110039206-A1 NOVEL RESINS AND PHOTORESIST COMPOSITIONS COMPRISING SAME ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2011-02-17 US disclosed
US-20110039210-A1 NOVEL RESINS AND PHOTORESIST COMPOSITIONS COMPRISING SAME ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2011-02-17 US disclosed
US-20110040056-A1 PROCESS FOR PRODUCTION OF POLYMER DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2011-02-17 US disclosed
US-7887991-B2 Positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-02-15 US disclosed
US-20110033800-A1 COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2011-02-10 US disclosed
US-20110033804-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-10 US disclosed
US-20110033801-A1 COATING COMPOSITIONS FOR USE WITH AN OVERCOATED PHOTORESIST ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2011-02-10 US disclosed
EP-2280308-A1 Processes for photolithography Rohm and Haas Electronic Materials, L.L.C. (US) 2011-02-02 EP disclosed
US-7878642-B2 Image forming method, actinic radiation curable ink-jet ink, and inkjet recording apparatus KONICA MINOLTA MEDICAL & GRAPHIC, INC. (JP) 2011-02-01 US disclosed
US-7879530-B2 Antireflective coating composition, antireflective coating, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-02-01 US disclosed
US-7878644-B2 Light cure of cationic ink on acidic substrates GERBER SCIENTIFIC INTERNATIONAL, INC. (US) 2011-02-01 US disclosed
US-7875417-B2 Heat curable; mixture of hydrolytic condensation of a silicon compound using acid catalyst; second compound is hydrolytic condensation of a silicon compound in presence of basic catalyst; hydroxide or organic acid salt of Group 1a metal; organic acid; alcohol containing ether groups and solvent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-01-25 US disclosed
US-7875416-B2 Composition for forming photosensitive polymer complex and method of preparing photosensitive polymer complex containing silver nanoparticles using the composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-01-25 US disclosed
EP-2275490-A1 Coating compositions for use with an overcoated photoresist Rohm and Haas Electronic Materials, L.L.C. (US) 2011-01-19 EP disclosed
EP-1122606-B1 Chemically amplified positive resist composition SUMITOMO CHEMICAL CO (JP) 2011-01-19 EP disclosed
EP-2273968-A1 COMPOSITIONS AND METHODS INCORPORATING PHOTOCATALYSTS THE PROCTER & GAMBLE COMPANY (US) 2011-01-19 EP disclosed
US-7871761-B2 Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-01-18 US disclosed
US-20110009643-A1 METHOD FOR PRODUCING ACRYLATE DERIVATIVE, ACRYLATE DERIVATIVE, AND INTERMEDIATE THEREOF KURARAY CO., LTD. (JP) 2011-01-13 US disclosed
US-7867690-B2 Tertiary alcohol derivative, polymer compound and photoresist composition KURARAY CO., LTD. (JP) 2011-01-11 US disclosed
US-7868407-B2 Substrate comprising a lower silicone resin film and an upper silicone resin film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-01-11 US disclosed
US-20110003257-A1 PROCESSES FOR PHOTOLITHOGRAPHY ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2011-01-06 US disclosed
US-20110001779-A1 INKJET RECORDING APPARATUS AND INKJET RECORDING METHOD KONICA MINOLTA HOLDINGS, INC. (JP) 2011-01-06 US disclosed
US-20110003250-A1 COATING COMPOSITIONS SUITABLE FOR USE WITH AN OVERCOATED PHOTORESIST ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2011-01-06 US disclosed
US-20100331508-A1 (METH)ACRYLATE DERIVATIVE, INTERMEDIATE THEREOF, AND POLYMER COMPOUND KURARAY CO., LTD. (JP) 2010-12-30 US disclosed
US-20100323298-A1 Photosensitive composition, microfabrication method using the same, and microfabricated structure thereof PARK JONG JIN 2010-12-23 US disclosed
US-7855043-B2 Hydrolytic condensation of organosilicon compound using acid and basic catalyst with Group 1a hydroxide, organic acid and solvent; efficiency patterning photoresist film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-12-21 US disclosed
US-20100316950-A1 COMPOSITION FOR FORMING BASE FILM FOR LITHOGRAPHY AND METHOD FOR FORMING MULTILAYER RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2010-12-16 US disclosed
EP-2261738-A2 Coating compositions suitable for use with an overcoated photoresist Rohm and Haas Electronic Materials, L.L.C. (US) 2010-12-15 EP disclosed
EP-2258691-A1 Coating compositions for use with an overcoated photoresist Rohm and Haas Electronic Materials, L.L.C. (US) 2010-12-08 EP disclosed
US-20100297851-A1 COMPOSITIONS AND METHODS FOR MULTIPLE EXPOSURE PHOTOLITHOGRAPHY ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2010-11-25 US disclosed
EP-2253647-A1 Novel resins and photoresist compositions comprising same Rohm and Haas Electronic Materials, L.L.C. (US) 2010-11-24 EP disclosed
WO-2010126919-A1 COMPOSITIONS AND METHODS INCORPORATING PHOTOCATALYSTS THE PROCTER & GAMBLE COMPANY (US) 2010-11-04 WO disclosed
EP-1324134-B1 Resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2010-10-20 EP disclosed
US-7808083-B2 Semiconductor device SUMITOMO BAKELITE COMPANY, LTD. (JP) 2010-10-05 US disclosed
US-7807331-B2 Hydrogenated ring-opening metathesis polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-10-05 US disclosed
US-20100247800-A1 Compositions and Methods Incorporating Photocatalysts THE PROCTER & GAMBLE COMPANY 2010-09-30 US disclosed
US-7803514-B2 Photosensitive composition, microfabrication method using the same, and microfabricated structure thereof SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-09-28 US disclosed
US-7799506-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2010-09-21 US disclosed
US-20100233619-A1 NOVEL POLYIMIDE SILICONE, PHOTOSENSITIVE RESIN COMPOSITION CONTAINING THE NOVEL POLYIMIDE SILICONE, AND METHOD FOR PATTERN FORMATION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-09-16 US disclosed
EP-2228400-A1 Novel polyimide silicone, photosensitive resin composition containing the novel polyimide silicone, and method for pattern formation Shin-Etsu Chemical Co., Ltd. (JP) 2010-09-15 EP disclosed
US-7794915-B2 Hydrogenated ring-opening metathesis polymer, resist composition comprising the same and patterning method MITSUI CHEMICALS, INC. (JP) 2010-09-14 US disclosed
US-7794913-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-09-14 US disclosed
EP-1096317-B1 Resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2010-09-08 EP disclosed
US-7785766-B2 Silphenylene-bearing polymer, photo-curable resin composition, patterning process, and substrate circuit protective film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-08-31 US disclosed
EP-2219076-A1 COMPOSITION FOR FORMING BASE FILM FOR LITHOGRAPHY AND METHOD FOR FORMING MULTILAYER RESIST PATTERN Mitsubishi Gas Chemical Company, Inc. (JP) 2010-08-18 EP disclosed
US-7776504-B2 Dye-containing resist composition and color filter using same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-08-17 US disclosed
US-20100193122-A1 PROCESS FOR MANUFACTURING ELECTRONIC DEVICE SUMITOMO BAKELITE CO., LTD. (JP) 2010-08-05 US disclosed
US-20100190107-A1 CYCLIC COMPOUND, PHOTORESIST BASE MATERIAL AND PHOTORESIST COMPOSITION IDEMITSU KOSAN CO. LTD (JP) 2010-07-29 US disclosed
US-20100181684-A1 RESIN COMPOSITION, FILLING MATERIAL, INSULATING LAYER AND SEMICONDUCTOR DEVICE SUMITOMO BAKELITE COMPANY LIMITED (JP) 2010-07-22 US disclosed
WO-2010083350-A1 NONPOLYMERIC BINDERS FOR SEMICONDUCTOR SUBSTRATE COATINGS FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2010-07-22 WO disclosed
US-7759045-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-07-20 US disclosed
US-7749664-B2 Dye-containing resist composition and color filter using same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-07-06 US disclosed
US-7745104-B2 Polymer having a hydrocarbon chain backbone and containing units derived from norbornadiene, indene, benzofuran, benzothiophene, acenaphthene, or vinyl pyrene, fluorene, phenanthrene, chrysene, naphthacene, pentacene, or acenaphthene; excellent etching resistance; shorter wavelengths SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-29 US disclosed
US-20100159219-A1 Negative pattern of carbon nanotubes and carbon nanotube composite comprising surface-modified carbon nanotubes PARK JONG JIN 2010-06-24 US disclosed
US-7741015-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-22 US disclosed
US-20100151381-A1 ANTIREFLECTIVE COATING COMPOSITION, ANTIREFLECTIVE COATING , AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-17 US disclosed
US-20100147334-A1 Coated-type silicon-containing film stripping process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-17 US disclosed
US-20100151382-A1 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-17 US disclosed
EP-2196858-A1 Coated-type silicon-containing film stripping process Shin-Etsu Chemical Co., Ltd. (JP) 2010-06-16 EP disclosed
US-7736834-B2 Photosensitive resin composition, photosensitive element employing it, resist pattern forming method, process for manufacturing printed circuit board and method for removing photocured product HITACHI CHEMICAL COMPANY, LTD. (JP) 2010-06-15 US disclosed
US-7727705-B2 High etch resistant underlayer compositions for multilayer lithographic processes FUJIFILM ELECTRONIC MATERIALS, U.S.A., INC. (US) 2010-06-01 US disclosed
EP-0989460-B1 PATTERN FORMING METHOD AZ ELECTRONIC MATERIALS USA (US) 2010-05-26 EP disclosed
US-20100119972-A1 COATING COMPOSITION MERCK PATENT GMBH (DE) 2010-05-13 US disclosed
US-20100120937-A1 SEMICONDUCTOR DEVICE SUMITOMO BAKELITE CO., LTD. (JP) 2010-05-13 US disclosed
US-20100104316-A1 ELECTROSTATIC CHARGING MEMBER, ELECTROSTATIC CHARGING DEVICE, PROCESS CARTRIDGE AND IMAGE FORMING APPARATUS FUJI XEROX CO., LTD. (JP) 2010-04-29 US disclosed
EP-2180376-A2 Electrostatic charging member, electrostatic charging device, process cartridge and image forming apparatus Fuji Xerox Co., Ltd. (JP) 2010-04-28 EP disclosed
US-20100086872-A1 Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-08 US disclosed
US-20100086870-A1 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-08 US disclosed
EP-2172807-A1 Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process Shinetsu Chemical Co., Ltd. (JP) 2010-04-07 EP disclosed
EP-2172808-A1 Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process Shinetsu Chemical Co., Ltd. (JP) 2010-04-07 EP disclosed
EP-1720063-B1 Resin containing ketene-aldehyde copolymer NIPPON SODA CO (JP) 2010-04-07 EP disclosed
US-7687228-B2 Antireflection film composition and patterning process using the same SHIN ETSU CHEMICAL CO., LTD. (JP) 2010-03-30 US disclosed
US-20100075257-A1 Resin and Chemically Amplified Resist Composition Comprising the Same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-03-25 US disclosed
EP-2166036-A1 RESIN COMPOSITION, EMBEDDING MATERIAL, INSULATING LAYER, AND SEMICONDUCTOR DEVICE Sumitomo Bakelite Company Limited (JP) 2010-03-24 EP disclosed
US-7678529-B2 Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-16 US disclosed
US-20100062380-A1 DOUBLE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-11 US disclosed
EP-2161744-A1 ELECTRONIC DEVICE MANUFACTURING METHOD Sumitomo Bakelite Co., Ltd. (JP) 2010-03-10 EP disclosed
US-7666573-B2 Positive photosensitive resin composition and method for forming pattern MITSUI CHEMICALS, INC. (JP) 2010-02-23 US disclosed
US-7666967-B2 Ester compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-02-23 US disclosed
US-20100028805-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-02-04 US disclosed
US-20100028807-A1 Imide Compound and Chemically Amplified Resist Composition Containing The Same SUMITOMO CHEMICAL COMPANY, LTD. (JP) 2010-02-04 US disclosed
US-20100028800-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-02-04 US disclosed
US-7655378-B2 Negative resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-02-02 US disclosed
US-20100021847-A1 Oxime Compound and Resist Composition Containing the Same SUMITOMO CHEMICAL COMPANY, LTD. (JP) 2010-01-28 US disclosed
US-7651829-B2 Positive resist material and pattern formation method using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-26 US disclosed
US-7649118-B2 Process for preparing fluorine-containing norbornene derivative DAIKIN INDUSTRIES, LTD. (JP) 2010-01-19 US disclosed
WO-2010005428-A1 RESIST SENSITIZER MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT) (US) 2010-01-14 WO disclosed
US-20100009296-A1 MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD FUJITSU LIMITED (JP) 2010-01-14 US disclosed
US-20100009289-A1 RESIST SENSITIZER MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2010-01-14 US disclosed
US-20100003615-A1 UPPER LAYER-FORMING COMPOSITION AND PHOTORESIST PATTERNING METHOD JSR CORPORATION (JP) 2010-01-07 US disclosed
US-7642043-B2 Rework process for photoresist film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-05 US disclosed
EP-2138897-A1 MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD Fujitsu Limited (JP) 2009-12-30 EP disclosed
US-7638268-B2 Rework process for photoresist film SHIN-ESTU CHEMICAL CO., LTD. (JP) 2009-12-29 US disclosed
US-7638256-B2 Fluorinated cyclic structure-bearing silicon compounds and silicone resins, resist compositions using the same, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-29 US disclosed
EP-1788437-B1 Rework process for photoresist film SHINETSU CHEMICAL CO (JP) 2009-12-23 EP disclosed
EP-1238972-B1 Novel carbazole derivative and chemically amplified radiation-sensitive resin composition JSR CORP (JP) 2009-12-16 EP disclosed
US-7632624-B2 Photoresist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-15 US disclosed
US-7629106-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-08 US disclosed
US-20090297979-A1 Polymerizable compound, polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-03 US disclosed
US-7625689-B2 better line edge roughness in excimer laser lithography; supramolecule ester useful in photoresists e.g. pentaerythritol, tetrakis(3-(methoxymethyloxycarbonyl)cyclohexanecarboxylate) aka PECHOM and other adamantanyl and norbornyl derivatives SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-12-01 US disclosed
US-20090286188-A1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-19 US disclosed
WO-2009140076-A1 COMPOSITIONS AND METHODS INCORPORATING PHOTOCATALYSTS THE PROCTER & GAMBLE COMPANY (US) 2009-11-19 WO disclosed
US-20090285768-A1 Compositions and Methods Incorporating Photocatalysts THE PROCTER & GAMBLE COMPANY 2009-11-19 US disclosed
US-20090280438-A1 METHOD OF FORMING PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-11-12 US disclosed
US-RE40964-E1 Negative type resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-11-10 US disclosed
US-20090269697-A1 POLYORGANOSILOXANE, RESIN COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-29 US disclosed
EP-2112188-A1 Polyorganosiloxane, resin composition, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2009-10-28 EP disclosed
US-20090263631-A1 FILM FORMING COMPOSITION FOR NANOIMPRINTING AND METHOD FOR PATTERN FORMATION TOKYO OHKA KOGYO CO., LTD. (JP) 2009-10-22 US disclosed
US-7604343-B2 Actinic ray curable composition, actinic ray curable ink, image formation method employing it, and ink-jet recording apparatus KONICA MINOLTA MEDICAL & GRAPHIC, INC. (JP) 2009-10-20 US disclosed
US-20090253881-A1 POLYMERIZABLE COMPOUND FOR PHOTORESIST, POLYMER THEREOF, AND PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER IDEMITSU KOSAN CO., LTD. (JP) 2009-10-08 US disclosed
US-20090253084-A1 DOUBLE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-08 US disclosed
US-7592407-B2 a perfluorinated ester compound containing a pyran ring, a hydroxy or protected hydroxy group; able to polymerized into a fluorinated polymer which is used as a base polymer to formulate a resist composition having transparency to laser light; alkali development amenability, and dry etch resistance SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-09-22 US disclosed
US-20090226848-A1 Method of manufacturing light receiving device SUMITOMO BAKELITE CO., LTD. (JP) 2009-09-10 US disclosed
US-20090226843-A1 MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-09-10 US disclosed
US-7585613-B2 comprising light absorbing silicone resin, acid generator generates acid upon exposure to radiation; photoresist pattern cover the antireflection film with a vertical wall profile, without intermixing, less damage to an underlying layer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-09-08 US disclosed
US-20090220886-A1 POLYHYDRIC COMPOUND AND CHEMICALLY AMPLIFIED RESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-09-03 US disclosed
US-20090206520-A1 Photosensitive composition, microfabrication method using the same, and microfabricated structure thereof SAMSUNG ELECTRONICS CO., LTD. 2009-08-20 US disclosed
US-20090208868-A1 Polyimides; polynorbornenes; photomasks; heat treatment; heat resistance; flame resistance MITSUI CHEMICALS , INC. (JP) 2009-08-20 US disclosed
US-20090208886-A1 DOUBLE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-20 US disclosed
US-20090202940-A1 Positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-13 US disclosed
US-20090202947-A1 Positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO.,LTD (JP) 2009-08-13 US disclosed
US-20090186307-A1 HYDROGENATED RING-OPENING METATHESIS POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS MITSUI CHEMICALS, INC. (JP) 2009-07-23 US disclosed
US-7556908-B2 Chemically amplified positive resist composition, (meth)acrylate derivative and a process for producing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-07-07 US disclosed
EP-1652844-B1 Fluorinated monomer having cyclic structure, manufacturing method, polymer, photoresist composition and patterning process SHINETSU CHEMICAL CO (JP) 2009-07-01 EP disclosed
EP-2075247-A1 Fluorinated monomer having cyclic structure, manufaturing method, polymer, photoresist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2009-07-01 EP disclosed
US-20090162092-A1 CHARGING MEMBER CLEANING UNIT, METHOD OF PRODUCING CHARGING MEMBER CLEANING UNIT, CHARGING DEVICE, PROCESS CARTRIDGE AND IMAGE FORMING APPARATUS FUJI XEROX CO., LTD. (JP) 2009-06-25 US disclosed
US-20090155546-A1 FILM-FORMING COMPOSITION, METHOD FOR PATTERN FORMATION, AND THREE-DIMENSIONAL MOLD TOKYO OHKA KOGYO CO., LTD. (JP) 2009-06-18 US disclosed
US-7541134-B2 Antireflective film-forming composition, method for manufacturing the same, and antireflective film and pattern formation method using the same INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-06-02 US disclosed
US-20090136869-A1 METAL OXIDE-CONTAINING FILM-FORMING COMPOSITION, METAL OXIDE-CONTAINING FILM, METAL OXIDE-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-05-28 US disclosed
EP-2063319-A1 Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2009-05-27 EP disclosed
US-20090130419-A1 FOAM SHEET AND PRODUCTION PROCESS THEREOF OJI PAPER CO., LTD (JP) 2009-05-21 US disclosed
US-7534547-B2 Optically active compound and photosensitive resin composition OSAKA GAS COMPANY LIMITED (JP) 2009-05-19 US disclosed
US-7531289-B2 Fluorinated monomer having cyclic structure, manufacturing method, polymer, photoresist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-05-12 US disclosed
US-7517619-B2 Dye-containing resist composition and color filter using same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-04-14 US disclosed
EP-1788012-B1 Silicon-containing antireflective coating forming composition, silicon-containing antireflective coating, substrate processing intermediate, and substrate processing method SHINETSU CHEMICAL CO (JP) 2009-04-08 EP disclosed
US-20090087776-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-04-02 US disclosed
US-20090087799-A1 ANTIREFLECTIVE COATING COMPOSITION, ANTIREFLECTIVE COATING, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-04-02 US disclosed
US-7511179-B2 Fluorine-containing polymer, resist composition prepared from same and novel fluorine-containing monomer DAIKIN INDUSTRIES, LTD. (JP) 2009-03-31 US disclosed
US-7510820-B2 Resist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-31 US disclosed
US-20090081595-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-26 US disclosed
WO-2009032890-A1 MULTI-TONE RESIST COMPOSITIONS MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT) (US) 2009-03-12 WO disclosed
US-20090067874-A1 Charging device, process cartridge, image forming apparatus, and cleaning member FUJI XEROX CO., LTD. (JP) 2009-03-12 US disclosed
US-20090068589-A1 MULTI-TONE RESIST COMPOSITIONS MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2009-03-12 US disclosed
US-20090053657-A1 PATTERNING PROCESS AND PATTERN SURFACE COATING COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-26 US disclosed
US-7494763-B2 Polyhydric phenol compound and chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-02-24 US disclosed
US-7494212-B2 Activated light curable inkjet ink and image formation method KONICA MINOLTA MEDICAL & GRAPHIC, INC. (JP) 2009-02-24 US disclosed
US-7495040-B2 Actinic ray curable composition, image forming method using the same and ink-jet recording apparatus using the same KONICA MINOLTA MEDICAL & GRAPHIC, INC. (JP) 2009-02-24 US disclosed
EP-2026385-A1 METHOD FOR MANUFACTURING LIGHT RECEIVING APPARATUS Sumitomo Bakelite Company, Ltd. (JP) 2009-02-18 EP disclosed
US-7491483-B2 Polymers, positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-17 US disclosed
US-20090042123-A1 CALIXRESORCINARENE COMPOUND, PHOTORESIST BASE COMPRISING THE SAME, AND COMPOSITION THEREOF Kinoshita, Hiroo (JP) 2009-02-12 US disclosed
US-20090041945-A1 ACTIVE RAY CURABLE COMPOSITION, POLYMERIZATION METHOD, ACTIVE RAY CURABLE INK, IMAGE FORMING METHOD, AND INK-JET RECORDING APPARATUS KONICA MINOLTA MEDICAL & GRAPHIC, INC. (JP) 2009-02-12 US disclosed
US-7488567-B2 Polymer, resist composition and patterning process PANASONIC CORPORATION (JP) 2009-02-10 US disclosed
US-20090035700-A1 TERTIARY ALCOHOL DERIVATIVE, POLYMER COMPOUND AND PHOTORESIST COMPOSITION KURARAY CO., LTD. (JP) 2009-02-05 US disclosed
US-7485405-B2 Photo-curable resin composition comprising a polyimide, a process for forming a pattern therewith, and a substrate protecting film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-03 US disclosed
US-7485408-B2 Fluorine-containing silicon compounds, silicone resins, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-02-03 US disclosed
US-20090023878-A1 (Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION 2009-01-22 US disclosed
EP-1845132-B1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHINETSU CHEMICAL CO (JP) 2009-01-21 EP disclosed
EP-1031879-B1 Novel ester compounds, polymers, resist compositions and patterning process SHINETSU CHEMICAL CO (JP) 2009-01-21 EP disclosed
US-7476486-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-13 US disclosed
US-7476485-B2 Resist lower layer film material and method for forming a pattern SHIN-ESTU CHEMICAL CO., LTD. (JP) 2009-01-13 US disclosed
US-20090011372-A1 SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
US-20090008682-A1 Light-Receiving Device SUMITOMO BAKELITE CO., LTD. (JP) 2009-01-08 US disclosed
EP-2011829-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2009-01-07 EP disclosed
EP-2011830-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2009-01-07 EP disclosed
EP-1132774-B1 Polymer, resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2009-01-07 EP disclosed
US-20090004601-A1 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-01-01 US disclosed
US-20090004600-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-01-01 US disclosed
EP-1867681-B1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHINETSU CHEMICAL CO (JP) 2008-12-31 EP disclosed
US-20080312400-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, AND RESIST UNDERLAYER FILM TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-18 US disclosed
US-7459261-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-02 US disclosed
WO-2008140846-A1 HIGH ETCH RESISTANT UNDERLAYER COMPOSITIONS FOR MULTILAYER LITHOGRAPHIC PROCESSES FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2008-11-20 WO disclosed
US-20080286691-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-11-20 US disclosed
EP-1992650-A1 TERTIARY ALCOHOL DERIVATIVE, POLYMER COMPOUND AND PHOTORESIST COMPOSITION Kuraray Co., Ltd. (JP) 2008-11-19 EP disclosed
EP-1640804-B1 Positive-tone radiation-sensitive resin composition JSR CORP (JP) 2008-11-19 EP disclosed
US-7452657-B2 comprising one of a tannin and a derivative thereof, a crosslinking agent and a polymer; formation of a fine, highly-detailed resist pattern; nanoedge roughness can be suppressed FUJITSU LIMITED (JP) 2008-11-18 US disclosed
US-20080277805-A1 Semiconductor Device SUMITOMO BAKELITE CO., LTD. (JP) 2008-11-13 US disclosed
US-7449277-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL C., LTD (JP) 2008-11-11 US disclosed
US-20080274432-A1 SILICONE-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-11-06 US disclosed
US-7439010-B2 Alkali-soluble siloxane polymer, positive type resist composition, resist pattern, process for forming the same, electronic device and process for manufacturing the same FUJITSU LIMITED (JP) 2008-10-21 US disclosed
US-20080248417-A1 Polyhydric phenol compound and chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-10-09 US disclosed
US-7432035-B2 (Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION (JP) 2008-10-07 US disclosed
US-7427464-B2 Patterning process and undercoat-forming material SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-09-23 US disclosed
US-20080227037-A1 Resist lower layer film composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-09-18 US disclosed
US-20080220356-A1 Electrophotographic photoreceptor, process cartridge and image-forming apparatus FUJI XEROX CO., LTD. (JP) 2008-09-11 US disclosed
US-20080220381-A1 Antireflection film composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-09-11 US disclosed
US-7423102-B2 Star polymer SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-09-09 US disclosed
US-20080206676-A1 THERMALLY CURED UNDERLAYER FOR LITHOGRAPHIC APPLICATION FUJIFILM ELECTRONIC MATERIALS, U.S.A, INC 2008-08-28 US disclosed
US-20080206667-A1 HIGH ETCH RESISTANT UNDERLAYER COMPOSITIONS FOR MULTILAYER LITHOGRAPHIC PROCESSES FUJIFILM ELECTRONIC MATERIALS, U.S.A., INC. 2008-08-28 US disclosed
WO-2008103776-A2 THERMALLY CURED UNDERLAYER FOR LITHOGRAPHIC APPLICATION FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2008-08-28 WO disclosed
US-7416833-B2 Photoresist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-08-26 US disclosed
US-7417104-B2 Porous film-forming composition, patterning process, and porous sacrificial film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-08-26 US disclosed
US-20080199814-A1 Device manufacturing process utilizing a double patterning process FUJIFILM ELECTRONIC MATERIALS, U.S.A., INC. 2008-08-21 US disclosed
US-20080199806-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-08-21 US disclosed
EP-1953593-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2008-08-06 EP disclosed
EP-1801619-B1 Substrate comprising two antireflective silicone resin layers between an organic layer and a photoresist layer, method for producing the same and patterning process using the same SHINETSU CHEMICAL CO (JP) 2008-08-06 EP disclosed
EP-1798599-B1 Antireflection film composition, patterning process and substrate using the same SHINETSU CHEMICAL CO (JP) 2008-08-06 EP disclosed
EP-1953183-A2 Silphenylene-bearing polymer, photo-curable resin composition, patterning process, and substrate circuit protective film Shin-Etsu Chemical Co., Ltd. (JP) 2008-08-06 EP disclosed
US-20080182087-A1 SILPHENYLENE-BEARING POLYMER, PHOTO-CURABLE RESIN COMPOSITION, PATTERNING PROCESS, AND SUBSTRATE CIRCUIT PROTECTIVE FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-07-31 US disclosed
EP-1948724-A1 LIGHT CURE OF CATIONIC INK ON ACIDIC SUBSTRATES Gerber Scientific International, Inc. (US) 2008-07-30 EP disclosed
EP-1950610-A1 COMPOSITION FOR FORMING UPPER FILM AND METHOD FOR FORMING PHOTORESIST PATTERN JSR Corporation (JP) 2008-07-30 EP disclosed
EP-1948444-A2 LIGHT CURE OF CATIONIC INK ON ACIDIC SUBSTRATES Gerber Scientific International, Inc. (US) 2008-07-30 EP disclosed
US-20080176166-A1 RESISTS FOR LITHOGRAPHY PIXELLIGENT TECHNOLOGIES, LLC 2008-07-24 US disclosed
EP-1236745-B1 Silicon-containing polymer, resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2008-07-23 EP disclosed
US-20080166670-A1 Complex includes a multifunctional epoxy resin, a photoacid generator, an organic solvent and a silver compound, or additionally includes a multifunctional acrylate resin and a photoinitiator, or an additive; photoreduction is improved; heat and wear resistance; dispersibility SAMSUNG ELECTRONICS CO., LTD. 2008-07-10 US disclosed
EP-1942375-A2 Composition for forming photosensitive polymer complex and method of preparing photosensitive polymer complex containing silver nanoparticles using the composition Samsung Electronics Co., Ltd. (KR) 2008-07-09 EP disclosed
US-20080153036-A1 Chemically amplified positive resist compostion SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-06-26 US disclosed
US-20080153991-A1 Method of making carbon nanotube patterned film or carbon nanotube composite using carbon nanotubes surface-modified with polymerizable moieties SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-06-26 US disclosed
US-7390840-B2 Active ray curable composition, active ray curable ink, image forming method and inkjet recording apparatus utilizing the same KONICA MINOLTA MEDICAL & GRAPHIC, INC. (JP) 2008-06-24 US disclosed
US-7378218-B2 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-27 US disclosed
US-7368218-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-06 US disclosed
US-20080090176-A1 Semiconductor Wafer And Semiconductor Device SUMITOMO BAKELITE CO., LTD. (JP) 2008-04-17 US disclosed
US-7358025-B2 Etching resistance; novolak resin having a fluorene or tetrahydrospirobiindene structure, an organic solvent, an acid generator, and a crosslinker, optionally combined with an intermediate layer having an antireflective effect SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-04-15 US disclosed
US-20080085470-A1 Hydrogenated ring-opening metathesis polymer, resist composition comprising the same and patterning method MITSUI CHEMICALS, INC. (JP) 2008-04-10 US disclosed
US-20080076252-A1 RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2008-03-27 US disclosed
US-20080070998-A1 Foam Production Method OJI PAPER CO., LTD. (JP) 2008-03-20 US disclosed
US-7344827-B2 Fine contact hole forming method employing thermal flow process SHIN-ETSU CHEMICAL CO., INC. (JP) 2008-03-18 US disclosed
US-7341775-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO. LTD. (JP) 2008-03-11 US disclosed
US-7335457-B2 Positive-tone radiation-sensitive resin composition JSR CORPORATION (JP) 2008-02-26 US disclosed
US-20080043081-A1 Active Ray Curable Ink-Jet Ink; And Image Forming Method And Ink-Jet Recording Apparatus Using The Same KONICA MINOLTA MEDICAL & GRAPHIC, INC. (JP) 2008-02-21 US disclosed
US-7332616-B2 Polymerizable compound, polymer, positive-resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-02-19 US disclosed
US-20080038662-A1 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-02-14 US disclosed
US-20080032231-A1 Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern SHIN-ETSU CHEMICAL CO., LTD. 2008-02-07 US disclosed
US-7326513-B2 Positive working resist composition FUJIFILM CORPORATION (JP) 2008-02-05 US disclosed
US-20080026322-A1 Hydrolytic condensation of organosilicon compound using acid and basic catalyst with Group 1a hydroxide, organic acid and solvent; efficiency patterning photoresist film SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
EP-1882705-A1 POLYMERIZABLE COMPOUND FOR PHOTORESIST, POLYMER THEREOF, AND PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER IDEMITSU KOSAN CO., LTD. (JP) 2008-01-30 EP disclosed
US-20080020290-A1 Negative resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-24 US disclosed
US-20080020289-A1 Novel polymer, positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-24 US disclosed
US-20080019729-A1 Charging member cleaning roller, charging device, process cartridge, and image forming apparatus FUJI XEROX CO., LTD. (JP) 2008-01-24 US disclosed
US-20080020317-A1 Novel metal nanoparticle and formation of conductive pattern using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-01-24 US disclosed
US-7314701-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2008-01-01 US disclosed
US-20070296787-A1 Ink-jet printer and image forming method KONICA MINOLTA MEDICAL & GRAPHIC, INC. (JP) 2007-12-27 US disclosed
EP-1867681-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2007-12-19 EP disclosed
US-7309122-B2 Method for storing cationic polymerizable composition and container for using thereof KONICA MINOLTA MEDICAL & GRAPHIC, INC. (JP) 2007-12-18 US disclosed
US-20070287086-A1 Colored photosensitive resin composition, color filter, image sensor, and camera system SONY CORPORATION (JP) 2007-12-13 US disclosed
US-20070287087-A1 Colored photosensitive resin composition, color filter, image sensor, and camera system SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-12-13 US disclosed
US-7303785-B2 Antireflective film material, and antireflective film and pattern formation method using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-04 US disclosed
US-7303855-B2 Photoresist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-04 US disclosed
US-7303852-B2 Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-04 US disclosed
US-7303787-B2 Active ray curable ink-jet composition, image forming method using the same, and ink-jet recording apparatus KONICA MINOLTA MEDICAL & GRAPHIC, INC. (JP) 2007-12-04 US disclosed
US-7303787-B2 Active ray curable ink-jet composition, image forming method using the same, and ink-jet recording apparatus KONICA MINOLTA MEDICAL & GRAPHIC, INC. (JP) 2007-12-04 US disclosed
US-20070275325-A1 Photoresist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-11-29 US disclosed
EP-1860502-A1 Colored photosensitive resin composition, color filter, image sensor, and camera system Sumitomo Chemical Company, Limited (JP) 2007-11-28 EP disclosed
EP-1860503-A2 Colored photosensitive resin composition, color filter, image sensor, and camera system Sumitomo Chemical Company, Limited (JP) 2007-11-28 EP disclosed
US-20070257976-A1 Image Forming Method, Actinic Radiation Curable Ink-Jet Ink, and Ink, Jet Recording Apparatus KONICA MINOLTA MEDICAL & GRAPHIC, INC. (JP) 2007-11-08 US disclosed
US-20070257976-A1 Image Forming Method, Actinic Radiation Curable Ink-Jet Ink, and Ink, Jet Recording Apparatus KONICA MINOLTA MEDICAL & GRAPHIC, INC. (JP) 2007-11-08 US disclosed
US-7285368-B2 Polymerizable ester having sulfonamide structure, polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-23 US disclosed
EP-1845132-A2 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shinetsu Chemical Co., Ltd. (JP) 2007-10-17 EP disclosed
US-20070238300-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHIN-ETSU CHEMICAL CO., LTD. 2007-10-11 US disclosed
EP-1482361-B1 ACID-DEGRADABLE RESIN COMPOSITIONS CONTAINING KETENE-ALDEHYDE COPOLYMER NIPPON SODA CO (JP) 2007-10-03 EP disclosed
EP-1837357-A1 ACTINIC RAY CURABLE COMPOSITION, ACTINIC RAY CURABLE INK, METHOD OF IMAGE FORMING THEREWITH, INKJET RECORDING APPARATUS AND EPOXY COMPOUND Konica Minolta Medical & Graphic, Inc. (JP) 2007-09-26 EP disclosed
US-20070219292-A1 INK SET FOR INK-JET RECORDING, POLYMERIZATION METHOD AND IMAGE FORMING METHOD KONICA MINOLTA MEDICAL & GRAPHIC, INC. (JP) 2007-09-20 US disclosed
US-20070218403-A1 (Meth)acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION 2007-09-20 US disclosed
US-20070218402-A1 Fluorine-containing silicon compounds, silicone resins, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-09-20 US disclosed
US-20070207408-A1 Polymers, positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-09-06 US disclosed
EP-1829937-A1 IMAGE FORMING METHOD, ACTIVE RAY CURING INKJET INK AND INKJET RECORDING DEVICE Konica Minolta Medical & Graphic, Inc. (JP) 2007-09-05 EP disclosed
EP-1829938-A1 ACTINIC RADIATION CURABLE MAGENTA INK COMPOSITION, ACTINIC RADIATION CURABLE INK JET RECORDING MAGENTA INK AND METHOD FOR IMAGE FORMATION AND INK JET RECORDING APPARATUS USING SAID INK, AND ACTINIC RADIATION CURABLE PRINTING MAGENTA INK Konica Minolta Medical & Graphic, Inc. (JP) 2007-09-05 EP disclosed
EP-1616854-B1 Polymerizable fluorinated ester, manufacturing method, polymer, photoresist composition and patterning process SHINETSU CHEMICAL CO (JP) 2007-09-05 EP disclosed
EP-1829936-A1 ACTIVE RAY-CURABLE COMPOSITION, ACTIVE RAY-CURABLE INK AND IMAGE-FORMING METHOD Konica Minolta Medical & Graphic, Inc. (JP) 2007-09-05 EP disclosed
EP-1829939-A1 ACTIVE RAY-CURABLE INKJET INK AND IMAGE-FORMING METHOD USING SAME Konica Minolta Medical & Graphic, Inc. (JP) 2007-09-05 EP disclosed
EP-1652846-B1 Polymerizable fluorinated compound, making method, polymer, resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2007-08-22 EP disclosed
US-7258962-B2 Positive-tone radiation-sensitive resin composition JSR CORPORATION (JP) 2007-08-21 US disclosed
WO-2007058796-A9 LIGHT CURE OF CATIONIC INK ON ACIDIC SUBSTRATES GERBER SCIENT INTERNATIONAL IN (US) 2007-08-16 WO disclosed
US-20070190451-A1 Calixresorcinarene compounds, photoresist base materials, and compositions thereof IDEMITSU KOSAN CO., LTD. (JP) 2007-08-16 US disclosed
US-20070190451-A1 Calixresorcinarene compounds, photoresist base materials, and compositions thereof IDEMITSU KOSAN CO., LTD. (JP) 2007-08-16 US disclosed
US-7256419-B2 Composition for forming organic insulating film and organic insulating film formed from the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-08-14 US disclosed
US-7255973-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-14 US disclosed
US-20070185226-A1 NOVEL POLYMERIZABLE COMPOUND, POLYMER, POSITIVE-RESIST COMPOSITION, AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-09 US disclosed
EP-1813985-A1 Antireflection film composition, substrate, and pattering process Shin-Etsu Chemical Co., Ltd. (JP) 2007-08-01 EP disclosed
US-20070172759-A1 Antireflection film composition, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-07-26 US disclosed
US-7247419-B2 Nanocomposite photosensitive composition and use thereof AZ ELECTRONIC MATERIALS USA CORP. (US) 2007-07-24 US disclosed
US-7244472-B2 Actinic radiation curable composition and actinic radiation curable ink, and image forming method as well as ink jet recording apparatus using the same KONICA CORPORATION (JP) 2007-07-17 US disclosed
US-20070161721-A1 Ink and image forming method utilizing the same KONICA MINOLTA MEDICAL & GRAPHIC, INC. 2007-07-12 US disclosed
US-7241553-B2 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-07-10 US disclosed
EP-1803781-A1 ACTINIC LIGHT CURABLE INK JET INK SET, IMAGE FORMING METHOD USING THE SAME, AND INK JET RECORDING APPARATUS Konica Minolta Medical & Graphic, Inc. (JP) 2007-07-04 EP disclosed
EP-1804291-A1 SEMICONDUCTOR WAFER AND SEMICONDUCTOR DEVICE Sumitomo Bakelite Company, Limited (JP) 2007-07-04 EP disclosed
US-20070148585-A1 Hyperbranched polymer, production method therefor and resist composition containing hyperbranched polymer LION CORPORATION. 2007-06-28 US disclosed
US-20070148570-A1 Electrophotographic photoreceptor, process cartridge and image-forming apparatus FUJI XEROX CO., LTD. (JP) 2007-06-28 US disclosed
US-20070149702-A1 Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED 2007-06-28 US disclosed
EP-1801619-A2 Substrate, method for producing the same, and patterning process using the same Shin-Etsu Chemical Co., Ltd. (JP) 2007-06-27 EP disclosed
EP-1801872-A1 SEMICONDUCTOR DEVICE Sumitomo Bakelite Company, Limited (JP) 2007-06-27 EP disclosed
US-20070141510-A1 NANOCOMPOSITE PHOTOSENSITIVE COMPOSITION AND USE THEREOF CHEN CHUNWEI 2007-06-21 US disclosed
EP-1798599-A1 Antireflection film composition, patterning process and substrate using the same Shinetsu Chemical Co., Ltd. (JP) 2007-06-20 EP disclosed
US-7232205-B2 Capping member, cleaning member, piping member, ink tank member, and UV curable ink jet recording apparatus fitted with the above members KONICA MINOLTA HOLDINGS, INC. (JP) 2007-06-19 US disclosed
US-7232638-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-06-19 US disclosed
US-7232642-B2 Chemically amplified positive resist composition, a haloester derivative and a process for producing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-06-19 US disclosed
US-7232641-B2 Polymerizable compound, polymer, positive-resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-06-19 US disclosed
US-20070134916-A1 Antireflection film composition, patterning process and substrate using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-06-14 US disclosed
EP-1795553-A1 PROCESS FOR PRODUCING FOAM Oji Paper Co., Ltd. (JP) 2007-06-13 EP disclosed
US-7229747-B2 Surface treatment of interpenetrating polymer networkcarbon tubes; photolithography; heat curing; negative patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-06-12 US disclosed
US-20070128886-A1 Substrate, method for producing the same, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-06-07 US disclosed
US-20070129576-A1 Process for preparing fluorine-containing norbornene derivative DAIKIN INDUSTRIES, LTD. 2007-06-07 US disclosed
US-20070128555-A1 Novel ester compound, polymer, resist composition, and patterning process CENTRAL GLASS CO., LTD. 2007-06-07 US disclosed
US-20070122740-A1 Resist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-31 US disclosed
US-7223516-B2 Positive type photoresist composition FUJIFILM CORPORATION (JP) 2007-05-29 US disclosed
WO-2007058651-A1 LIGHT CURE OF CATIONIC INK ON ACIDIC SUBSTRATES GERBER SCIENTIFIC INTERNATIONAL, INC. (US) 2007-05-24 WO disclosed
US-20070117044-A1 Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method SHIN-ETSU CHEMICAL CO., LTD. 2007-05-24 US disclosed
US-20070117411-A1 Rework process for photoresist film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-24 US disclosed
WO-2007058796-A2 LIGHT CURE OF CATIONIC INK ON ACIDIC SUBSTRATES GERBER SCIENTIFIC INTERNATIONAL, INC. (US) 2007-05-24 WO disclosed
US-20070117252-A1 Silicon-containing antireflective coating forming composition, silicon-containing antireflective coating, substrate processing intermediate, and substrate processing method SHIN-ETSU CHEMICAL CO., LTD. 2007-05-24 US disclosed
EP-1788436-A1 Rework process for photoresist film Shin-Etsu Chemical Company, Ltd. (JP) 2007-05-23 EP disclosed
EP-1788012-A1 Silicon-containing antireflective coating forming composition, silicon-containing antireflective coating, substrate processing intermediate, and substrate processing method Shin-Etsu Chemical Co., Ltd. (JP) 2007-05-23 EP disclosed
EP-1788433-A2 Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method Shin-Etsu Chemical Co., Ltd. (JP) 2007-05-23 EP disclosed
EP-1788437-A2 Rework process for photoresist film Shinetsu Chemical Co., Ltd. (JP) 2007-05-23 EP disclosed
US-7220530-B2 Light sensitive planographic printing plate material KONICA MINOLTA MEDICAL & GRAPHIC, INC. (JP) 2007-05-22 US disclosed
US-20070111140-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-17 US disclosed
US-20070111136-A1 Photosensitive resin composition, photosensitive element employing it, resist pattern forming method, process for manufacturing printed circuit board and method for removing photocured product HITACHI CHEMICAL COMPANY, LTD. (JP) 2007-05-17 US disclosed
US-20070111134-A1 solvent remove the first photoresist film, forming a second photoresist film over the second antireflection silicone resin film which is over the first antireflection silicone resin film; lower cost and provide an excellent resist pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-17 US disclosed
US-20070109382-A1 Light Cure of Cationic Ink on Acidic GERBER SCIENTIFIC, INC. 2007-05-17 US disclosed
US-20070110958-A1 Light cure of cationic ink on acidic substrates GERBER SCIENTIFIC, INC. 2007-05-17 US disclosed
US-7217743-B2 Curable white ink KONICA CORPORATION (JP) 2007-05-15 US disclosed
EP-1136885-B1 Chemically amplified positive resist composition and patterning method SHINETSU CHEMICAL CO (JP) 2007-05-09 EP disclosed
EP-1096318-B1 Resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2007-05-09 EP disclosed
US-7214743-B2 Resist lower layer film material and method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-08 US disclosed
US-7211367-B2 Photo acid generator, chemical amplification resist material SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-01 US disclosed
US-7204588-B2 Ink jet printed matter KONICA CORPORATION (JP) 2007-04-17 US disclosed
US-7202013-B2 Antireflective film material, and antireflective film and pattern formation method using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-10 US disclosed
US-7202318-B2 Polymerizable fluorinated ester, manufacturing method, polymer, photoresist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-10 US disclosed
US-20070072115-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-29 US disclosed
US-7192684-B2 Polymerizable silicon-containing compound, manufacturing method, polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-20 US disclosed
US-7189493-B2 Polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-13 US disclosed
US-7186773-B2 Process for preparing fluorine-containing norbornene derivative DAIKIN INDUSTRIES, LTD. (JP) 2007-03-06 US disclosed
US-7186495-B2 (Meth) acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION (JP) 2007-03-06 US disclosed
US-7182453-B2 Ink jet recording apparatus and ink jet recording method KONICA MINOLTA HOLDINGS, INC. (JP) 2007-02-27 US disclosed
US-20070042291-A1 Positive resist composition and a pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed
US-7179581-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-02-20 US disclosed
EP-1150167-B1 Polymers, resist compositions and patterning process SHINETSU CHEMICAL CO (JP) 2007-02-07 EP disclosed
US-7169697-B2 Semiconductor device and manufacturing method of the same KABUSHIKI KAISHA TOSHIBA (JP) 2007-01-30 US disclosed
US-7169697-B2 Semiconductor device and manufacturing method of the same KABUSHIKI KAISHA TOSHIBA (JP) 2007-01-30 US disclosed
US-7169869-B2 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-30 US disclosed
US-7169541-B2 Compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-30 US disclosed
US-7169446-B2 Oxetane compound, actinic ray curable composition, ink composition for ink jet recording, and image formation method KONICA MINOLTA MEDICAL & GRAPHIC, INC. (JP) 2007-01-30 US disclosed
US-7168802-B2 Ink composition and a method for ink jet recording KONICA CORPORATION (JP) 2007-01-30 US disclosed
US-20070020559-A1 Positive-type photosensitive resin composition and cured film manufactured therefrom NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-01-25 US disclosed
US-20070020559-A1 Positive-type photosensitive resin composition and cured film manufactured therefrom NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-01-25 US disclosed
US-7163970-B2 Actinic ray curable ink and printed matter utilizing the same KONICA MINOLTA HOLDINGS, INC. (JP) 2007-01-16 US disclosed
US-7163778-B2 Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-16 US disclosed
US-20070009831-A1 PLANOGRAPHIC PRINTING PLATE MATERIAL AND IMAGE FORMATION METHOD KONICA MINOLTA MEDICAL & GRAPHIC, INC. (JP) 2007-01-11 US disclosed
US-20070009832-A1 Fluorinated cyclic structure-bearing silicon compounds and silicone resins, resist compositions using the same, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-11 US disclosed
EP-1741705-A1 Fluorinated cyclic structure-bearing silicon compounds and silicone resins, resist compositions using the same, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2007-01-10 EP disclosed
US-20070003862-A1 Resist composition, method of forming resist pattern, semiconductor device and method of manufacturing thereof FUJITSU LIMITED (JP) 2007-01-04 US disclosed
US-20070003862-A1 Resist composition, method of forming resist pattern, semiconductor device and method of manufacturing thereof FUJITSU LIMITED (JP) 2007-01-04 US disclosed
US-20060292488-A1 Composition for formation of antireflection film, and antireflection film in which the same is used TOKYO OHKA KOGYO CO., LTD. (JP) 2006-12-28 US disclosed
US-7153630-B2 Resist with reduced line edge roughness MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2006-12-26 US disclosed
US-7144674-B2 Positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2006-12-05 US disclosed
US-20060269871-A1 Polymer, resist composition and patterning process MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2006-11-30 US disclosed
US-7141351-B2 Basic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-11-28 US disclosed
US-7141352-B2 Basic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-11-28 US disclosed
US-20060263702-A1 Composition for forming intermediate layer containing sylylphenylene-based polymer and pattern-forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2006-11-23 US disclosed
US-7135269-B2 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-11-14 US disclosed
US-20060251991-A1 Novel fluorine-containing polymer, resist composition prepared from same and novel fluorine-containing monomer DAIKIN INDUSTRIES, LTD. 2006-11-09 US disclosed
EP-1720063-A1 Resin containing ketene-aldehyde copolymer NIPPON SODA CO., LTD. (JP) 2006-11-08 EP disclosed
US-7132220-B2 Organosiloxane polymer, photo-curable resin composition, patterning process, and substrate protective film SHIH-ETSU CHEMICAL CO., LTD. (JP) 2006-11-07 US disclosed
US-7132215-B2 Ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-0982628-B1 A chemical amplifying type positive resist composition SUMITOMO CHEMICAL CO (JP) 2006-11-02 EP disclosed
US-7129014-B2 Positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2006-10-31 US disclosed
US-7125641-B2 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-10-24 US disclosed
US-7125642-B2 Sulfonates, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-10-24 US disclosed
US-7125643-B2 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-10-24 US disclosed
US-20060234158-A1 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-10-19 US disclosed
US-20060234160-A1 Novel ester compounds, polymers, resist compositions and patterning process HASEGAWA KOJI 2006-10-19 US disclosed
US-20060228562-A1 Semiconductor device, resin composition for buffer coating, resin composition for die bonding, and resin composition for encapsulating SUMITOMO BAKELITE COMPANY LIMITED (JP) 2006-10-12 US disclosed
US-20060228645-A1 Nanocomposite photosensitive composition and use thereof MERCK PATENT GMBH (DE) 2006-10-12 US disclosed
US-7115690-B2 Fluorine-containing polymer, resist composition prepared from same and novel fluorine-containing monomer DAIKIN INDUSTRIES, LTD. (JP) 2006-10-03 US disclosed
US-20060216619-A1 Charge-transporting compound, electrophotographic photoreceptor, image-forming apparatus, and process cartridge FUJI XEROX CO., LTD. (JP) 2006-09-28 US disclosed
EP-1542241-B1 Composition for forming organic insulating film and organic insulating film formed from the same SAMSUNG ELECTRONICS CO LTD (KR) 2006-09-27 EP disclosed
US-20060210785-A1 Foamed product in a sheet form and method for production thereof OJI PAPER CO., LTD. (JP) 2006-09-21 US disclosed
US-20060204891-A1 Etching resistance; novolak resin having a fluorene or tetrahydrospirobiindene structure, an organic solvent, an acid generator, and a crosslinker, optionally combined with an intermediate layer having an antireflective effect SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-09-14 US disclosed
US-20060204893-A1 Novel fluorine-containing polymer, resist composition prepared from same and novel fluorine-containing monomer DAIKIN INDUSTRIES, LTD. 2006-09-14 US disclosed
US-7105267-B2 Resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-09-12 US disclosed
US-7105269-B2 Copolymer, polymer mixture, and radiation-sensitive resin composition JSR CORPORATION (JP) 2006-09-12 US disclosed
US-7105272-B2 Acid-degradable resin compositions containing ketene-aldehyde copolymer NIPPON SODA CO., LTD. (JP) 2006-09-12 US disclosed
EP-1698645-A1 HYPERBRANCHED POLYMER, PROCESS FOR PRODUCING THE SAME AND RESIST COMPOSITION CONTAINING THE HYPERBRANCHED POLYMER Lion Corporation (JP) 2006-09-06 EP disclosed
US-20060194143-A1 Fluorine-containing polymerizable monomers, fluorine-containing polymer compounds, resist compositions using the same, and patterning process CENTRAL GLASS COMPANY, LIMITED (JP) 2006-08-31 US disclosed
US-20060188812-A1 Phenolic hydroxyl group-containing copolymer and radiation-sensitive resin composition JSR CORPORATION (JP) 2006-08-24 US disclosed
US-20060188809-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-08-24 US disclosed
US-7090961-B2 Photo acid generator, chemical amplification resist material and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-08-15 US disclosed
US-20060177765-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2006-08-10 US disclosed
EP-1059563-B1 Agent for reducing substrate dependence of resist WAKO PURE CHEM IND LTD (JP) 2006-08-09 EP disclosed
EP-1686424-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2006-08-02 EP disclosed
US-20060166138-A1 Radiation-sensitive resin composition JSR CORPORATION 2006-07-27 US disclosed
US-20060160017-A1 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2006-07-20 US disclosed
US-20060160023-A1 Photo acid generator, chemical amplification resist material and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. 2006-07-20 US disclosed
US-7078147-B2 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-07-18 US disclosed
US-20060147836-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-07-06 US disclosed
US-7067231-B2 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-06-27 US disclosed
US-20060093960-A1 Fluorinated monomer having cyclic structure, manufacturing method, polymer, photoresist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2006-05-04 US disclosed
US-20060094817-A1 Polymerizable fluorinated compound, making method, polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2006-05-04 US disclosed
EP-1652846-A1 Polymerizable fluorinated compound, making method, polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-05-03 EP disclosed
EP-1652844-A2 Fluorinated monomer having cyclic structure, manufacturing method, polymer, photoresist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2006-05-03 EP disclosed
US-7037995-B2 Tertiary (meth)acrylates having lactone structure, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-05-02 US disclosed
EP-1647570-A1 FOAMED PRODUCT IN A SHEET FORM AND METHOD FOR PRODUCTION THEREOF Oji Paper Co., Ltd. (JP) 2006-04-19 EP disclosed
US-20060078821-A1 A caroboxyalkylanthracene based compound, a hydroxy or alkoxystyrene polymer, and a sulfonimide compound as photoacid generator; low sublimation properties and excellent compatibility with other components; exhibits optimum controllability of radiation transmittance; microfabrication JSR CORPORATION (JP) 2006-04-13 US disclosed
US-20060079658-A1 Photo-curable resin composition comprising a polyimide, a process for forming a pattern therewith, and a substrate protecting film SHIN-ETSU CHEMICAL CO., LTD. 2006-04-13 US disclosed
US-20060078820-A1 Resist with reduced line edge roughness MASS INSTITUTE OF TECHNOLOGY (MIT) (US) 2006-04-13 US disclosed
EP-1645909-A2 Photo-curable resin composition comprising a polyimide, a process for forming a pattern therewith, and a substrate protecting film Shin-Etsu Chemical Co., Ltd. (JP) 2006-04-12 EP disclosed
US-20060073411-A1 Chemically amplified resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2006-04-06 US disclosed
EP-1640804-A2 Positive-tone radiation-sensitive resin composition JSR Corporation (JP) 2006-03-29 EP disclosed
US-7005228-B2 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-02-28 US disclosed
US-7005216-B2 Photo mask RENESAS TECHNOLOGY CORP. (JP) 2006-02-28 US disclosed
US-7001707-B2 Resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-02-21 US disclosed
US-20060029870-A1 Electrophotographic photoreceptor, image forming apparatus, and process cartridge FUJI XEROX CO., LTD. (JP) 2006-02-09 US disclosed
US-6994946-B2 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-02-07 US disclosed
US-6994945-B2 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-02-07 US disclosed
EP-0908473-B1 Styrene polymers, chemically-amplified positive resist compositions, their preparation and use in a patterning process SHINETSU CHEMICAL CO (JP) 2006-02-01 EP disclosed
US-20060019195-A1 Photoresist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-01-26 US disclosed
EP-1004568-B1 Novel ester compounds, polymers, resist compositions and patterning process SHINETSU CHEMICAL CO (JP) 2006-01-25 EP disclosed
US-20060014913-A1 Star polymer SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2006-01-19 US disclosed
US-20060014106-A1 Photoresist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2006-01-19 US disclosed
EP-1616854-A1 Polymerizable fluorinated ester, manufacturing method, polymer, photoresist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-01-18 EP disclosed
US-20060009602-A1 Polymerizable fluorinated ester, manufacturing method, polymer, photoresist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2006-01-12 US disclosed
US-20060008730-A1 Monomers for photoresists bearing acid-labile groups of reduced optical density HONEYWELL INTERNATIONAL INC 2006-01-12 US disclosed
US-20060008731-A1 Novel photoresist monomers and polymers HONEYWELL INTERNATIONAL INC 2006-01-12 US disclosed
US-20050287471-A1 Novel fluorine-containing polymer having acid-reactive group and chemically amplifying type photoresist composition prepared from same DAIKIN INDUSTRIES, LTD. 2005-12-29 US disclosed
US-20050282091-A1 Patterning process and undercoat-forming material SHIN-ETSU CHEMICAL CO.,LTD. (JP) 2005-12-22 US disclosed
US-20050277756-A1 Porous film-forming composition, patterning process, and porous sacrificial film SHIN-ETSU CHEMICAL CO., LTD. 2005-12-15 US disclosed
US-20050277058-A1 Antireflective film-forming composition, method for manufacturing the same, and antireflective film and pattern formation method using the same SHIN-ETSU CHEMICAL CO., LTD. 2005-12-15 US disclosed
EP-0875787-B1 Method for reducing the substrate dependence of resist WAKO PURE CHEM IND LTD (JP) 2005-12-14 EP disclosed
US-20050266351-A1 Chemically amplified positive resist composition, (meth)acrylate derivative and a process for producing the same SUMITOMO CHEMICAL COMPANY, LIMITED 2005-12-01 US disclosed
US-20050267275-A1 Polymers, resist compositions and patterning process HARADA YUJI 2005-12-01 US disclosed
US-20050260525-A1 Chemically amplified positive resist composition, a haloester derivative and a process for producing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2005-11-24 US disclosed
US-20050260521-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-11-24 US disclosed
US-20050250924-A1 Novel tertiary (meth)acrylates having lactone structure, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-11-10 US disclosed
US-6962767-B2 Acetal compound, polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-11-08 US disclosed
US-20050244747-A1 Positive-tone radiation-sensitive resin composition JSR CORPORATION (JP) 2005-11-03 US disclosed
US-20050227173-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2005-10-13 US disclosed
US-20050227174-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2005-10-13 US disclosed
US-6953651-B2 Chemical amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2005-10-11 US disclosed
US-20050221221-A1 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-10-06 US disclosed
US-20050221227-A1 Alkali-soluble siloxane polymer, positive type resist composition, resist pattern, process for forming the same, electronic device and process for manufacturing the same FUJITSU LIMITED (JP) 2005-10-06 US disclosed
US-6949324-B2 Alkali-soluble siloxane polymer, positive type resist composition, resist pattern, process for forming the same, electronic device and process for manufacturing the same FUJITSU LIMITED (JP) 2005-09-27 US disclosed
US-6946235-B2 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-09-20 US disclosed
US-6946233-B2 High resolution; etching chemical resistance SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-09-20 US disclosed
US-6936398-B2 Resist with reduced line edge roughness MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2005-08-30 US disclosed
US-6933095-B2 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-08-23 US disclosed
US-20050175935-A1 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2005-08-11 US disclosed
US-6924079-B2 Resist resin, chemical amplification type resist, and method of forming of pattern with the same NEC CORPORATION (JP) 2005-08-02 US disclosed
US-6921623-B2 Active components and photosensitive resin composition containing the same KRI, INC. (JP) 2005-07-26 US disclosed
US-6919161-B2 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-07-19 US disclosed
US-6916592-B2 Esters, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-07-12 US disclosed
US-6916593-B2 Amines having a carbonyl group, ester group, or a carbonate group prevent a decrease in the thickness of a resist film, enlarge focus margin, and increase dimensional stability SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-07-12 US disclosed
US-6913865-B2 Surface modified encapsulated inorganic resist MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2005-07-05 US disclosed
US-20050142491-A1 Novel epoxy compounds having an alicyclic structure, polymer compounds, resist materials, and patterning methods HASEGAWA KOJI (JP) 2005-06-30 US disclosed
US-6908724-B2 Fluorine-containing polymer having acid-reactive group and chemically amplifying type photoresist composition prepared from same DAIKIN INDUSTRIES, LTD. (JP) 2005-06-21 US disclosed
US-20050130057-A1 Acid-degradable resin compositions containing ketene-aldehyde copolymer NIPPON SODA CO., LTD. (JP) 2005-06-16 US disclosed
US-20050127355-A1 Composition for forming organic insulating film and organic insulating film formed from the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2005-06-16 US disclosed
EP-1542241-A1 Composition for forming organic insulating film and organic insulating film formed from the same Samsung Electronics Co., Ltd (KR) 2005-06-15 EP disclosed
US-6902772-B2 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-06-07 US disclosed
US-6899991-B2 Photo-curable resin composition, patterning process, and substrate protecting film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-05-31 US disclosed
US-6899990-B2 Epoxy compound having alicyclic structure, polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-05-31 US disclosed
US-20050106499-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2005-05-19 US disclosed
US-6893792-B2 Positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2005-05-17 US disclosed
US-20050095527-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2005-05-05 US disclosed
US-20050089797-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2005-04-28 US disclosed
US-20050084796-A1 Resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-21 US disclosed
US-20050079446-A1 Novel polymerizable compound, polymer, positive-resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-14 US disclosed
US-20050079440-A1 Novel polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-14 US disclosed
US-6878501-B2 Fluorinated cyclolefin polymers; radiation transparent, alkali solubility SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-12 US disclosed
US-6878508-B2 Resist patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-12 US disclosed
US-6875556-B2 Resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-05 US disclosed
US-6872514-B2 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-03-29 US disclosed
US-6872504-B2 High sensitivity X-ray photoresist MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2005-03-29 US disclosed
US-6869744-B2 Chemically amplified positive resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-03-22 US disclosed
US-6866982-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-03-15 US disclosed
US-6866983-B2 Resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-03-15 US disclosed
US-6864037-B2 Acrylic polymer; exposure to high energy radiation; photoresist patterns SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-03-08 US disclosed
US-6861197-B2 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-03-01 US disclosed
US-6855477-B2 Chemically amplified resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-02-15 US disclosed
US-20050019692-A1 Resist material and method for pattern formation KUBOTA HIROSHI (JP) 2005-01-27 US disclosed
US-6846607-B2 Carbazole derivative and chemically amplified radiation-sensitive resin composition JSR CORPORATION (JP) 2005-01-25 US disclosed
US-20050014092-A1 Novel compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-01-20 US disclosed
US-6844133-B2 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-01-18 US disclosed
US-20050008968-A1 Basic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-01-13 US disclosed
US-20050003303-A1 Polymerizable ester having sulfonamide structure, polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-01-06 US disclosed
US-20040265755-A1 Surface treatment of interpenetrating polymer networkcarbon tubes; photolithography; heat curing; negative patterns SAMSUNG ELECTRONICS CO., LTD. (KR) 2004-12-30 US disclosed
US-6835527-B2 Lithography; forming semiconductors SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-12-28 US disclosed
US-6835524-B2 Polymers, chemical amplification resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-28 US disclosed
US-6835525-B2 Copolymer of a (meth)acrylic acid derivative with a vinyl ether monomer, an allyl ether monomer and an oxygen-containing alicyclic olefin monomer, as a base resin; sensitive to high energy radiation, and etching resistance SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-28 US disclosed
US-20040259037-A1 Resist lower layer film material and method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-23 US disclosed
EP-1059314-B1 A resist composition WAKO PURE CHEM IND LTD (JP) 2004-12-22 EP disclosed
US-20040253461-A1 Antireflective film material, and antireflective film and pattern formation method using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-16 US disclosed
US-6830866-B2 Hydrogenated product of ring- opening metathesis polymer and a poly(meth)acrylic acid derivative as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etch resistance SHI-ETSU CHEMICAL CO., LTD. (JP) 2004-12-14 US disclosed
US-6830868-B2 Useful as a chemically amplified resist responding to active radiation, for example ultraviolet rays such as a KrF excimer laser, ArF excimer laser, and F2 excimer laser JSR CORPORATION (JP) 2004-12-14 US disclosed
US-20040247900-A1 Antireflective film material, and antireflective film and pattern formation method using the same SHIN-ETSU CHEMICAL CO. LTD. (JP) 2004-12-09 US disclosed
EP-0789279-B2 Polymer and resist material WAKO PURE CHEM IND LTD (JP) 2004-12-08 EP disclosed
EP-1195390-B1 Polymer, resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2004-12-08 EP disclosed
US-20040241579-A1 Positive resist material and pattern formation method using the same SHIN-ETSU CHEMICAL CO., LTD. 2004-12-02 US disclosed
US-20040241577-A1 Resist lower layer film material and method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-02 US disclosed
US-20040242821-A1 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-12-02 US disclosed
EP-1482361-A1 ACID-DEGRADABLE RESIN COMPOSITIONS CONTAINING KETENE-ALDEHYDE COPOLYMER NIPPON SODA CO., LTD. (JP) 2004-12-01 EP disclosed
US-6824955-B2 RADIATION TRANSPARENT PHOTORESISTS COMPRISING MIXTURES OF COPOLYMERS, SOLVENTS AND ACID GENERATORS, HAVING HIGH SENSITIVITY AND ETCHING RESISTANCE, USED IN LITHOGRAPHY SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-11-30 US disclosed
US-20040234884-A1 Basic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-11-25 US disclosed
US-20040234885-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-11-25 US disclosed
US-20040224513-A1 Fine contact hole forming method employing thermal flow process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-11-11 US disclosed
US-6815145-B2 PHOTORESISTS USEFUL IN MICRO-LITHOGRAPHY; FOR PATTERN FORMATION ON SEMICONDUCTOR WAFERS MASSACHUSETTS INSTITUTE OF TECHNOLOGY 2004-11-09 US disclosed
US-6815143-B2 POST EXPOSURE DELAY (PED)-STABILIZER-CONTAINING RESIST MATERIAL HAVING HIGH SENSITIVITY AND HIGH RESOLUTION; THIOL DERIVATIVES, DISULFIDE DERIVATIVES AND/OR THIOLSULFONATE DERIVATIVES SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-11-09 US disclosed
US-20040214103-A1 Process for preparing fluorine-containing norbornene derivative DAIKIN INDUSTRIES, LTD. 2004-10-28 US disclosed
US-20040191479-A1 Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-09-30 US disclosed
US-20040191670-A1 Chemical amplification type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED 2004-09-30 US disclosed
US-20040191680-A1 Novel fluorine-containing polymer, resist composition prepared from same and novel fluorine-containing monomer DAIKIN INDUSTRIES, LTD. 2004-09-30 US disclosed
US-20040191674-A1 Chemical amplification resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-09-30 US disclosed
US-6794109-B2 POLYMER CONTAINING A FLUORINATED STYRENE COPOLYMER MASSACHUSETTS INSTITUTE OF TECHNOLOGY 2004-09-21 US disclosed
US-6794111-B2 UNSATURATED TETRAHYDROFURAN DERIVATIVE MONOMERS AND THEIR PREPARATION E.G, 3,6-EPOXY-2,2-DIMETHYL-2,2A,3,6,6A,7-HEXAHYDROBENZO(C)FURAN SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-09-21 US disclosed
EP-1457821-A1 Method of making carbon nanotube patterned film or carbon nanotube composite material using a composition comprising carbon nanotubes surface-modified with polymerizable moieties Samsung Electronics Co., Ltd. (KR) 2004-09-15 EP disclosed
US-6790564-B2 FOR USE IN PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES; EFFICIENCY RENESAS TECHNOLOGY CORPORATION (JP) 2004-09-14 US disclosed
US-6790586-B2 BASE RESIN WITH ALICYCLIC HYDROCARBON BACKBONE HAVING A CARBOXYLATE MOIETY WHICH GENERATES A CARBOXYLIC ACID UNDER ACIDIC CONDITIONS, A PHOTOACID GENERATOR, AND AN ORGANIC SOLVENT; EXCIMER LASER, MICROPATTERNING SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-09-14 US disclosed
US-6790591-B2 POLYMER FORMED BY RADICAL RING CLOSING POLYMERIZATION OF 4-(TRIFLUOROMETHYL)-4-HYDROXY-OR SUBSTITUTED HYDROXY-1,1,2,3,3-PENTAFLUORO-1,6-HEPTADIENE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-09-14 US disclosed
US-6784268-B2 POLAR ALKYLOXYALKYL-SUBSTITUTED NORBORN-2-ENES, PENTALENES, 4,7-METHANOINDENES HAVING A ACID LABILE GROUP AS MONOMERS FOR HIGH-MOLECULAR WEIGHT POLYMERS; SUBSTRATE ADHESION; RIGIDITY; RESOLUTION AND ETCH RESISTANE; MICROPATTERNS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-08-31 US disclosed
US-6783914-B1 POSITIVE PHOTOSENSITIVE RESIST COMPRISING RESIN BINDER AND ENCAPSULATED INORGANIC CORE PARTICLES; BASE SOLUBLE; ACTIVATION BY RADIATION MASSACHUSETTS INSTITUTE OF TECHNOLOGY 2004-08-31 US disclosed
EP-1449860-A1 NOVEL FLUOROPOLYMER, RESIST COMPOSITIONS CONTAINING THE SAME, AND NOVEL FLUOROMONOMERS Daikin Industries, Ltd. (JP) 2004-08-25 EP disclosed
US-6780563-B2 SENSITIVITY AND RESOLUTION, RESISTANCE TO OXYGEN PLASMA ETCHING SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-08-24 US disclosed
US-20040157156-A1 Sulfonates, polymers, resist compositions and patterning process CENTRAL GLASS CO., LTD. (JP) 2004-08-12 US disclosed
US-20040157155-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-08-12 US disclosed
US-6770780-B1 QUATERNIZATION OF T-BUTYL BROMOACETATE WITH TRI(N-BUTYL)PHOSPHINE TO FORM PHOSPHONIUM SALT; REACTING WITH BASE TO FORM PHOSPHORUS YLIDE; FORMING 2,4,6-TRIS(3', 5'-DI-T-BUTYL-4'-HYDROXYBENZYL)METHYL-STYRENE; HYDROLYSIS JSR CORPORATION (JP) 2004-08-03 US disclosed
US-20040144752-A1 Resist compositions and patterning process MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2004-07-29 US disclosed
US-6767686-B2 FOR USE IN LITHOGRAPHY SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-07-27 US disclosed
US-20040142276-A1 Organosiloxane polymer, photo-curable resin composition, patterning process, and substrate protective film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-07-22 US disclosed
US-6762007-B2 A BLENDS COMPRISING A PARTIALLY ETHERIFIED POLYHYDROXYSTYRENE-P AND A PARTIALLY ESTERIFIED POLYHYDROXYSTYRENE-P WITH PIVALIC ACID, AN ACID GENERATORS; PHOTOLITHOGRAPHY ACTIVATED BY HIGH-ENERGY ULTRAVIOLET RAY SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-07-13 US disclosed
US-6749988-B2 PREVENTING A RESIST FILM FROM THINNING AND ALSO FOR ENHANCING THE RESOLUTION AND FOCUS MARGIN OF RESIST; HETEROCYCLIC AMINE COMPOUNDS HAVING A HYDRATING GROUP SUCH AS A HYDROXY, ETHER, ESTER, CARBONYL, CARBONATE GROUP OR LACTONE RING SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-06-15 US disclosed
US-20040110091-A1 High sensitivity X-ray photoresist MASS INSTITUTE OF TECHNOLOGY (MIT) 2004-06-10 US disclosed
US-6746722-B2 EXPOSING POLYMER AND PHOTOACID GENERATOR WITH A LIGHT OF 180 NM OR LESS WAVELENGTH, AND CONDUCTING BAKING AND DEVELOPMENT. NEC CORPORATION (JP) 2004-06-08 US disclosed
US-20040106063-A1 Resist composition HATAKEYAMA JUN (JP) 2004-06-03 US disclosed
US-6743564-B2 A POSITIVE RESIST FORMULATION CONSISTS OF NITRILE CONTAINING TERT-AMINE COMPOUND, AN ORGANIC SOLVENT AND A BASE RESIN HAVING AN ACIDIC FUNCTIONAL GROUP WHICH IS PROTECTED WITH AN ACID LABILE GROUP, A PHOTOACID GENERATOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-06-01 US disclosed
US-6743566-B2 (1,3-DIOXOLAN-4-YL)ALKYL 5-NORBORNENE-2-CARBOXYLATE USEFUL-AS A MONOMER TO FORM A POLYMER SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-06-01 US disclosed
EP-1039346-B1 Resist compositions and pattering process SHINETSU CHEMICAL CO (JP) 2004-05-26 EP disclosed
EP-1415974-A1 PROCESS FOR PRODUCTION OF FLUORINE-CONTAINING NORBORNENE DERIVATIVES Daikin Industries, Ltd. (JP) 2004-05-06 EP disclosed
US-6730453-B2 POLYSILSESQUIOXANE POLYMERS CONTAINING CARBOXY OR HYDROXY GROUPS, AND A PHOTOACID GENERATOR SHIN ETSU CHEMICAL CO., LTD. (JP) 2004-05-04 US disclosed
US-6730451-B2 FLUOROACRYLATE POLYMERS; TRANSPARENCY; PREVENTING NEGATIVE WORKING; LOW ABSORPTION OF FLUORINE EXCIMER LASER LIGHT; HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-05-04 US disclosed
US-20040068124-A1 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-04-08 US disclosed
US-20040067436-A1 Polymerizable silicon-containing compound, manufacturing method, polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-04-08 US disclosed
US-6716573-B2 Resist Composition WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2004-04-06 US disclosed
EP-0849634-B1 Radiation sensitive resin composition JSR CORP (JP) 2004-03-31 EP disclosed
EP-1403295-A2 Ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-03-31 EP disclosed
US-6710148-B2 COPOLYMER OF FLUORINATED ACRYLATE AND NORBORNENE COMPOUND SHIN ETSU CHEMICAL CO., LTD. (JP) 2004-03-23 US disclosed
US-6710188-B2 VINYL COPOLYMER HAVING 3-OXO-4-OXABICYCLO(3.2.1)OCTANE-2-YL GROUP NEC CORPORATION (JP) 2004-03-23 US disclosed
US-6709799-B2 Resist compositions SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-03-23 US disclosed
US-6696218-B2 RESIN WHICH HAS A POLYMERIZATION UNIT DERIVED FROM P-HYDROXYSTYRENE AND A POLYMERIZATION UNIT HAVING A GROUP UNSTABLE AGAINST ACID, AND A DIALKANESULFONATE OF ISOPROPYLIDENEDICYCLOHEXANOL SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-02-24 US disclosed
US-20040030079-A1 Polymers, resist compositions and patterning process MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2004-02-12 US disclosed
US-6686121-B2 WITHOUT PURIFYING RESIST MATERIALS FORMED BY REACTION, BY REACTING AN ALKALI-SOLUBLE POLYMER HAVING PHENOLIC HYDROXYL GROUPS OR CARBOXYL GROUP WITH A VINYL ETHER AND/OR DIALKYL CARBONATE IN CATALYST, APROTIC SOLVENT, ADDING ACID GENERATOR CLARIANT FINANCE (BVI) LIMITED (VG) 2004-02-03 US disclosed
US-20040013980-A1 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-01-22 US disclosed
US-20040013973-A1 Ether, polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO,. LTD. (JP) 2004-01-22 US disclosed
US-20040009424-A1 Protecting groups for lithographic resist compositions MASS INSTITUTE OF TECHNOLOGY (MIT) 2004-01-15 US disclosed
US-6677102-B2 RESOLUTION, SENSITIVITY SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-01-13 US disclosed
US-6677101-B2 REACTIVITY, RIGIDITY AND ADHESION TO THE SUBSTRATE, AND UNDERGOES A LOW DEGREE OF SWELLING DURING DEVELOPMENT; RESOLUTION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-01-13 US disclosed
US-20040006191-A1 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO. LTD. (JP) 2004-01-08 US disclosed
EP-1148044-B1 Ester compounds, polymers, resist compositions and patterning process SHINETSU CHEMICAL CO (JP) 2004-01-07 EP disclosed
US-6673511-B1 PHOTORESISTS COMPRISING TERTIARY AMINES, SOLVENTS, ACID GENERATORS AND ADDITION POLYMERS HAVING ACID-LABILE GROUPS USED FOR LITHOGRAPHY AND HAVING HIGH SENSITIVITY, RESOLUTION AND CORROSION RESISTANCE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-01-06 US disclosed
US-6673518-B2 PHENOL-FORMALDEHYDE RESIN AND ACID GENERATOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-01-06 US disclosed
US-6673515-B2 SENSITIVE TO HIGH-ENERGY RADIATION, RESOLUTION, AND ETCHING RESISTANCE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-01-06 US disclosed
EP-1375463-A1 OPTICALLY ACTIVE COMPOUND AND PHOTOSENSITIVE RESIN COMPOSITION Kansai Research Institute, Inc. (JP) 2004-01-02 EP disclosed
US-6670498-B2 Norbornene and dimethanonaphthalenes substituted with a branched or cyclic tertiary alkoxycarbonyl hydrocarbyleneoxycarbonyl group SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-12-30 US disclosed
US-6670094-B2 Norbornene based polymers; photoresists; resolution, etching resistance, use in micropatterning with electron beams or deep-ultraviolet radation SHIN-ETSU CHEMICAL CO., LTD (JP) 2003-12-30 US disclosed
US-20030236351-A1 Positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITIED (JP) 2003-12-25 US disclosed
US-20030235779-A1 Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-12-25 US disclosed
US-6667145-B1 Resist composition comprising as a base resin a polymer having highly adherent, highly rigid units and especially suited as micropatterning material for VLSI fabrication, and (2) a patterning process using the resist SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-12-23 US disclosed
US-6660448-B2 Lactone ring-substituted norbornene based polymers; photoresists; resolution, etching resistance, use in micropatterning with electron beams or deep-ultraviolet radation SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-12-09 US disclosed
US-6660447-B2 Copolymers of fluorinated vinyl phenol units and acrylonitrile units has high transmittance to VUV radiation SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-12-09 US disclosed
US-20030224291-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-12-04 US disclosed
US-20030224290-A1 Photo acid generator, chemical amplification resist material and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-12-04 US disclosed
US-20030224297-A1 Chemically amplified resist, polymer for the chemically amplified resist, monomer for the polymer and method for transferring pattern to chemically amplified resist layer NEC CORPORATION 2003-12-04 US disclosed
US-6656660-B1 Resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-12-02 US disclosed
US-20030219678-A1 Novel esters, polymers, resist compositions and patterning process MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-11-27 US disclosed
US-20030219677-A1 Positive resist composition SUMITOMO CHEMICAL COMPANY (JP) 2003-11-27 US disclosed
US-20030215740-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-11-20 US disclosed
US-20030215739-A1 Polymers, resist compositions and patterning process MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-11-20 US disclosed
US-20030211734-A1 Resist resin, chemical amplification type resist, and method of forming of pattern with the same NEC CORPORATION (JP) 2003-11-13 US disclosed
US-20030211421-A1 Optically active compound and photosensitive resin composition KRI, INC. (JP) 2003-11-13 US disclosed
US-20030207201-A1 Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-11-06 US disclosed
US-6639084-B2 Comprises vinyl polymer having 3-oxo-4-oxabicyclo(3.2.1) octane-2-yl group; sensitive to far-ultraviolet light; imaging; for use with semiconductor wafers; improved resistance against dry etching and adhesion to substrates NEC CORPORATION (JP) 2003-10-28 US disclosed
US-20030198891-A1 Novel ester compounds polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-10-23 US disclosed
US-6635400-B2 Alkali-insoluble polymer having acidic groups protected with acid labile groups, photoacid generator, and 1,2-naphthoquinonediazidosulfonyl group-bearing compound; high resolution; plating resistance SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-10-21 US disclosed
US-20030194644-A1 Resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-10-16 US disclosed
US-20030194634-A1 Novel anthracene derivative and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-10-16 US disclosed
US-20030194639-A1 Positive resist composition FORTINET, INC. 2003-10-16 US disclosed
US-20030194645-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-10-16 US disclosed
US-6632581-B2 Improved resist performance-sensitivity and resolution using resin derived from alicyclic unsaturated carboxylic acid ester and acid generator suitable for excimer laser lithography using argon/krypton fluoride; semiconductor processing SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-10-14 US disclosed
US-20030180659-A1 Resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-09-25 US disclosed
US-20030180663-A1 Chemical amplification type positive resist composition SUMITOMO CHEMICAL COMPANY (JP) 2003-09-25 US disclosed
US-6624335-B2 Unsaturated ether compound; photopolymerization SHIN ETSU CHEMICAL CO., LTD. (JP) 2003-09-23 US disclosed
US-6623909-B2 Polysiloxane SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-09-23 US disclosed
US-6623907-B2 Chemical amplified photoresist JSR CORPORATION (JP) 2003-09-23 US disclosed
US-20030175620-A1 Chemical amplification type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-09-18 US disclosed
US-20030175617-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-09-18 US disclosed
WO-2003075092-A2 PROTECTING GROUP-CONTAINING POLYMERS FOR LITHOGRAPHIC RESIST COMPOSITIONS MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2003-09-12 WO disclosed
EP-1148045-B1 Ester compounds, polymers, resist compositions and patterning process SHINETSU CHEMICAL CO (JP) 2003-09-10 EP disclosed
EP-1343048-A2 Anthracene derivative and radiation-sensitive resin composition JSR Corporation (JP) 2003-09-10 EP disclosed
US-20030165773-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-09-04 US disclosed
US-6613844-B2 Polyhydroxystyrene type polymer containing acid labile groups, endcapped and optionally crosslinked; improved alkali dissolution contrast, sensitivity, resolution, plasma etching resistance, heat resistance, and reproducibility SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-09-02 US disclosed
US-20030157423-A1 Copolymer, polymer mixture, and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-08-21 US disclosed
US-20030157431-A1 Resist materials for 157-nm lithography MASS INSTITUTE OF TECHNOLOGY (MIT) 2003-08-21 US disclosed
US-20030153706-A1 Acetal compound, polymer, resist composition and patterning response SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-08-14 US disclosed
US-20030152864-A1 Novel fluorine-containing polymer having acid-reactive group and chemically amplifying type photoresist composition prepared from same DAIKIN INDUSTRIES, LTD. 2003-08-14 US disclosed
US-6605408-B2 Hydrogenated polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-08-12 US disclosed
US-6605678-B2 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-08-12 US disclosed
US-6596463-B2 Photosensitivity, resolution, chemical resistance SHIN-ETSU CHEMICAL, CO., LTD. (JP) 2003-07-22 US disclosed
EP-1143299-B1 Chemically amplified positive resist composition SUMITOMO CHEMICAL CO (JP) 2003-07-16 EP disclosed
EP-1053985-B1 Resist compositions and patterning process SHINETSU CHEMICAL CO (JP) 2003-07-16 EP disclosed
US-6593056-B2 Chemically amplified positive resist composition and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-07-15 US disclosed
US-20030129505-A1 Krypton fluoride laser lithography; photoresist pattern RENESAS ELECTRONICS CORPORATION (JP) 2003-07-10 US disclosed
EP-0780732-B1 Polymer composition and resist material WAKO PURE CHEM IND LTD (JP) 2003-07-09 EP disclosed
US-6590010-B2 Containing units from 4,4'-(9H-fluoren-9-ylidene) bis((2-propenyl) phenol) SHIN-ETSU CHEMICALS, CO., LTD. (JP) 2003-07-08 US disclosed
EP-1324134-A2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-07-02 EP disclosed
US-6586157-B2 Cycloalkyl-substituted cycloalkyl or cycloalkenyl acrylates; polymers that are sensitive to high energy radiation; patterning using electron beams or deep UV SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-07-01 US disclosed
US-6586152-B1 Useful as an ingredient of a resist composition used for preparation of semiconductor devices and the like, which comprises a compound shown by the following general formula useful as an ingredient of a resist composition used for WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2003-07-01 US disclosed
US-20030120009-A1 Polymer, resist composition and patterning process NISHI TSUNEHIRO (JP) 2003-06-26 US disclosed
US-6582880-B2 Acrylate resin containing fluorinated alkyl groups in ester side chains; high transmittance to VUV radiation SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-06-24 US disclosed
US-20030113662-A1 Photo-curable resin composition, patterning process, and substrate protecting film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-06-19 US disclosed
US-20030113659-A1 Resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-06-19 US disclosed
US-6579659-B2 Interpolymer from alicyclic lactone ester of (meth)acrylic acid; tetrahydrofuranonyl (meth)acrylate; a hydroxyadamantyl (meth)acrylate, or a norbornene and maleic or itaconic anhydride; and another unit (2-ethyl-2-adamantyl acrylate) SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-06-17 US disclosed
US-6579658-B2 Fluorinated maleic anhydride or maleimide SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-06-17 US disclosed
US-20030108819-A1 Resist patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-06-12 US disclosed
US-20030099901-A1 Chemically amplified resist compositions and patterning process MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-05-29 US disclosed
US-20030099897-A1 Surface modified encapsulated inorganic resist MASS INSTITUTE OF TECHNOLOGY (MIT) 2003-05-29 US disclosed
US-6569596-B1 Photoresists comprising N-(ethylsulfonyloxy)succinimide, novolaks, curing agents and an acid generators such as alpha -(hexylsulfonyloxyimino)-4-methoxybenzyl cyanide; integrated circuits; semiconductors SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-05-27 US disclosed
US-6566038-B2 Micropatterning using electron beams or ultraviolet rays SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-05-20 US disclosed
US-6566037-B2 A polymer with monomers of a robust alicyclic structure having both polar and acid labile groups; resist composition of improved reactivity, substrate adhesion and etching resistance SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-05-20 US disclosed
US-20030091929-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-05-15 US disclosed
US-20030087183-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-05-08 US disclosed
US-20030087181-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-05-08 US disclosed
US-20030088115-A1 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-05-08 US disclosed
US-6559337-B2 Containing C17-23 divalent hydrocarbon group containing a bridged cyclic hydrocarbon group, as well as an acid decompsable group NEC CORPORATION (JP) 2003-05-06 US disclosed
US-20030082479-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-05-01 US disclosed
US-20030064320-A1 Active components and photosensitive resin composition containing the same KRI, INC. (JP) 2003-04-03 US disclosed
US-6541179-B2 A chemically amplified, positive resist comprising a sulfonium salt compound as photoacid generator, a base resin containing a monomer having alicyclic structure, and a solvent; heat treatment and exposure SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-04-01 US disclosed
US-6537726-B2 Polymeric unit derived from 3-hydroxy-1-adamantyl(meth)acrylate and polymeric unit derived from beta-(meth)acryloyloxy-gamma-butyrolactone; adhesion, sensitivity, resolution SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-03-25 US disclosed
US-20030054290-A1 Polymer, resist material and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-03-20 US disclosed
US-20030054289-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-03-20 US disclosed
US-6534235-B1 Photosensitive resin and inorganic particles having a functional group obtained by a reaction between inorganic particles and a coupling agent KANSAI RESEARCH INSTITUTE, INC. (JP) 2003-03-18 US disclosed
US-20030050398-A1 Novel epoxy compounds having an alicyclic structure, polymer compounds, resist materials, and patterning methods SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-03-13 US disclosed
US-6531627-B2 Pendant ester groups on norbornene and 1,4:5,8-dimethanonaph-thalene backbone monomers, excellent reactivity; photosensitivity SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-03-11 US disclosed
US-20030045731-A1 Cyclic acetal compound, polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-03-06 US disclosed
EP-1186624-B1 Organosiloxane polymers and photo-curable resin compositions SHINETSU CHEMICAL CO (JP) 2003-03-05 EP disclosed
US-6527966-B1 Forming a pattern composed of an etchable layer by conducting dry etching of an etchable layer formed on a substrate for semiconductor through a mask of patterned radiation sensitive material coating formed on the etchable layer CLARIANT FINANCE (BVI) LIMITED (VG) 2003-03-04 US disclosed
US-20030039918-A1 Chemical amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-02-27 US disclosed
US-20030039920-A1 Resist composition WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2003-02-27 US disclosed
US-6524765-B1 Micropatterning material for VLSI fabrication; improved sensitivity, resolution and etching resistance; copolymer of di-tert-butyl 1-(bicyclo(2.2.1)hept-2-en-5-yl) propane-2,2-dicarboxylate and maleic anhydride SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-02-25 US disclosed
US-20030036618-A1 Fluorine-containing phenylmaleimide derivative, polymer, chemically amplified resist composition, and method for pattern formation using the composition NEC CORPORATION (JP) 2003-02-20 US disclosed
US-20030036015-A1 Resist with reduced line edge roughness AIR FORCE, UNITED STATES 2003-02-20 US disclosed
US-20030036603-A1 Novel epoxy compound having alicyclic structure, polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-02-20 US disclosed
EP-0843220-B1 Radiation sensitive resin composition JSR CORP (JP) 2003-02-19 EP disclosed
US-20030031953-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-02-13 US disclosed
US-20030031952-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-02-13 US disclosed
US-6515150-B2 Photoresist resin; exposure to high energy radiation; development SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-02-04 US disclosed
US-6515149-B2 Exposure to high energy radiation SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-02-04 US disclosed
US-6511787-B2 Acrylic resin containing hexafluoroisopropanol units having high transmittance to ultraviolet radiation having high transparency, substrate adhesion, alkali development, and acid-elimination capability for lithographic microprocessing SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-01-28 US disclosed
US-6512067-B2 An addition polymer containing allyl, copolycarbons and other addition polymers; applying polymeric resist onto a substrate, heat-treating the formed coating and then exposing to high energy radiation of electron beam through a photomask SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-01-28 US disclosed
US-6511785-B1 Polymer with alkenyloxy, acetal, and/or orthoester functional groups; forming contact hole pattern by thermal flow process SHIN ETSU CHEMICAL CO., LTD. (JP) 2003-01-28 US disclosed
US-6509135-B2 Polymers having fused rings with polar and acid labile groups tetracyclo(4.4.0.1(2,5).1(7,10))dodec-3-ene-8-carboxylic acid, tert-butyl ester for example; resists with improved etch resistance, resolution and sensitivity SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-01-21 US disclosed
US-20030013039-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (US) 2003-01-16 US disclosed
US-20030013038-A1 Chemical amplification type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-01-16 US disclosed
US-20030013832-A1 Novel styrene polymer, chemically amplified positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-01-16 US disclosed
EP-1276012-A2 Resist patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-01-15 EP disclosed
EP-1275666-A1 NOVEL FLUOROPOLYMER HAVING ACID-REACTIVE GROUP AND CHEMICAL AMPLIFICATION TYPE PHOTORESIST COMPOSITION CONTAINING THE SAME Daikin Industries, Ltd. (JP) 2003-01-15 EP disclosed
US-6506537-B2 Photopolymerization JSR CORPORATION (JP) 2003-01-14 US disclosed
US-20030008231-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-01-09 US disclosed
EP-0831369-B1 Positive photosensitive composition FUJI PHOTO FILM CO LTD (JP) 2003-01-02 EP disclosed
US-20020197559-A1 Polymers, resist compositions and patterning process, novel tetrahydrofuran compounds and their preparation SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-12-26 US disclosed
EP-1265103-A1 ACTIVE COMPONENTS AND PHOTOSENSITIVE RESIN COMPOSITIONS CONTAINING THE SAME Kansai Research Institute, Inc. (JP) 2002-12-11 EP disclosed
US-6492090-B2 MICROPATTERNING USING ELECTRON BEAMS OR ULTRAVIOLET RAYS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-12-10 US disclosed
US-6492089-B2 POLYMER BEARING CYCLIC SILICON-CONTAINING GROUPS SUCH AS 1,4,4-TRIMETHYL-4-SILACYCLOHEXYL METHACRYLATE; USE AS CHEMICALLY AMPLIFIED POSITIVE RESIST SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-12-10 US disclosed
US-20020172885-A1 Novel carbazole derivative and chemically amplified radiation-sensitive resin composition JSR CORPORATION (JP) 2002-11-21 US disclosed
EP-1257880-A2 RESIST MATERIALS FOR 157-NM LITHOGRAPHY MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2002-11-20 EP disclosed
WO-2002091084-A2 RESIST WITH REDUCED LINE EDGE ROUGHNESS MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2002-11-14 WO disclosed
US-20020168583-A1 Chemical amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY LIMITED (JP) 2002-11-14 US disclosed
US-20020168581-A1 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-11-14 US disclosed
EP-0942329-B1 NOVEL PROCESS FOR PREPARING RESISTS CLARIANT FINANCE BVI LTD (VG) 2002-11-13 EP disclosed
US-6479210-B2 COMPRISING AN ORGANIC MATERIAL CONTAINING SUBSTITUENT(S) CAPABLE OF BEING RELEASED IN THE PRESENCE OF ACID, AND ACID GENERATORS OF AT LEAST ONE ONIUM SALT AND SULFONE AND/OR SULFONATE COMPOUNDS; RESOLUTION, SENSITIVITY CLARIANT FINANCE (BVI) LIMITED (VG) 2002-11-12 US disclosed
US-20020164540-A1 Chemical amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-11-07 US disclosed
US-20020160297-A1 Low abosorbing resists for 157 nm lithography AIR FORCE, UNITED STATES 2002-10-31 US disclosed
US-20020161148-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-10-31 US disclosed
US-20020161150-A1 Ether, polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-10-31 US disclosed
US-20020155378-A1 Chemical amplifying type positive resist compositions SUMITOMO CHEMICAL COMPANY LIMITED (JP) 2002-10-24 US disclosed
US-6469197-B1 A (METH)ACRYLATE DERIVATIVE WHOSE ESTER PORTION IS A 4,7-METHANOINDENE DIOL OR 1,4:5,8-DIMETHANONAPHTHALENE DIOL FOR MAKING PHOTORESIST POLYMERS NEC CORPORATION (JP) 2002-10-22 US disclosed
US-6468712-B1 PHOTOLITHOGRAPHY AT VERY SHORT ULTRAVIOLET WAVELENGTHS EMPLOYING A PHOTO-ACID GENERATOR AND AN ALIPHATIC POLYMER THAT INCLUDES ONE OR MORE PROTECTED HYDROXYL GROUPS; FLUORIDE EXCIMER LASERS; ENHANCED RESOLUTION MASSACHUSETTS INSTITUTE OF TECHNOLOGY 2002-10-22 US disclosed
US-20020150835-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-10-17 US disclosed
US-20020147259-A1 Chemical amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-10-10 US disclosed
US-20020146641-A1 Chemically amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-10-10 US disclosed
US-20020147290-A1 Cyclic acetal compound, polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-10-10 US disclosed
US-6461791-B1 NOVEL POLYMER HAVING HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADIATION OF UP TO 300 NANOMETERS; RESIST MATERIALS HAVE SUFFICIENT TRANSPARENCY IN REGION OF EXCIMER LASER AND SATISFY RESOLUTION AND SENSITIVITY REQUIREMENTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-10-08 US disclosed
US-6461790-B1 NOVEL POLYMER HAVING HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADIATION OF UP TO 300 NANOMETERS; RESIST MATERIALS HAVE SUFFICIENT TRANSPARENCY IN REGION OF EXCIMER LASER AND SATISFY RESOLUTION AND SENSITIVITY REQUIREMENTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-10-08 US disclosed
US-6461789-B1 NOVEL POLYMER HAVING HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADIATION OF UP TO 300 NANOMETERS; RESIST MATERIALS HAVE SUFFICIENT TRANSPARENCY IN REGION OF EXCIMER LASERS, AND SATISFY RESOLUTION AND SENSITIVITY REQUIREMENTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-10-08 US disclosed
US-20020136981-A1 Resist material and pattern forming method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-26 US disclosed
US-6455223-B1 COMPOSITION COMPRISING AS BASE RESIN DENDRITIC OR HYPERBRANCHED POLYMER OF PHENOL DERIVATIVE HAVING SPECIFIED WEIGHT AVERAGE MOLECULAR WEIGHT; HIGH RESOLUTION, HIGH SENSITIVITY, MINIMIZED LINE EDGE ROUGHNESS, ETCH RESISTANCE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-24 US disclosed
US-20020132970-A1 Acetal compound, polymer, resist composition and patterning response SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-19 US disclosed
US-20020132182-A1 Polymers, resist materials, and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-19 US disclosed
EP-1238972-A1 Novel carbazole derivative and chemically amplified radiation-sensitive resin composition JSR Corporation (JP) 2002-09-11 EP disclosed
WO-2002069043-A2 LOW ABSORBING RESISTS FOR 157 NM LITHOGRAPHY MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2002-09-06 WO disclosed
EP-0887705-B1 Resist compositions SHINETSU CHEMICAL CO (JP) 2002-09-04 EP disclosed
EP-1236745-A2 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-04 EP disclosed
US-6444396-B1 ESTER COMPOUND HAVING AN ALKYLCYCLOALKYL OR ALKYLCYCLOALKENYL GROUP AS THE PROTECTIVE GROUP IS PROVIDED AS WELL AS A POLYMER COMPRISING UNITS OF THE ESTER COMPOUND. THE POLYMER IS USED AS A BASE RESIN TO FORMULATE A RESIST COMPOSITION HAVING A HIGHER SHIN-ETSU CHEMICAL CO. (JP) 2002-09-03 US disclosed
US-20020115807-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020115018-A1 Amine compounds, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-6437052-B1 Monomer having diol structure, polymer thereof, and negative photoresist composition and pattern forming method using the same NEC CORPORATION (JP) 2002-08-20 US disclosed
US-6436606-B1 POLYMERS AND PHOTORESISTS COATING SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-20 US disclosed
US-20020111509-A1 (Meth) acrylate, polymer, photoresist composition, and pattern forming process making use of the composition NEC CORPORATION (JP) 2002-08-15 US disclosed
EP-1231205-A1 VINYLPHENYLPROPIONIC ACID DERIVATIVES, PROCESSES FOR PRODUCTION OF THE DERIVATIVES, POLYMERS THEREOF AND RADIOSENSITIVE RESIN COMPOSITIONS JSR Corporation (JP) 2002-08-14 EP disclosed
US-6432608-B1 FINENESS PATTERN WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2002-08-13 US disclosed
EP-0803775-B1 Positive working photosensitive composition FUJI PHOTO FILM CO LTD (JP) 2002-08-07 EP disclosed
US-20020102493-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-01 US disclosed
EP-0908783-B1 Resist compositions, their preparation and use for patterning processes SHINETSU CHEMICAL CO (JP) 2002-07-31 EP disclosed
US-20020098442-A1 Resist resins, chemically amplified resist composition, and process for the formation of a pattern NEC CORPORATION 2002-07-25 US disclosed
US-20020098443-A1 Amine compounds, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-07-25 US disclosed
EP-1225479-A2 Chemical amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-07-24 EP disclosed
US-6420085-B1 SULFONIUM SALT PHOTOACID GENERATOR WITH HIGH SENSITIVITY TO ARF EXCIMER LASER; THERMAL AND STORAGE STABILITY; SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-07-16 US disclosed
US-20020091215-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-07-11 US disclosed
US-20020086222-A1 Photomask and manufacturing method of an electronic device therewith RENESAS ELECTRONICS CORPORATION (JP) 2002-07-04 US disclosed
US-6413695-B1 ENANTIOMORPHS; EXPOSURE, DEVELOPMENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-07-02 US disclosed
US-20020081524-A1 Chemical amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-06-27 US disclosed
EP-0819981-B1 Radiation sensitive resin composition JSR CORP (JP) 2002-06-05 EP disclosed
US-6399274-B1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD (JP) 2002-06-04 US disclosed
US-20020061465-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-05-23 US disclosed
US-20020061463-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-05-23 US disclosed
EP-1207423-A1 Chemically amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-05-22 EP disclosed
US-6391529-B2 PHOTOLITHOGRAPHY USING AS PHOTORESIST A PHOTOACID GENERATOR AND (METH)ACRYLIC ACID ESTERS OF ACID- OR ESTER-FUNCTIONAL C17-23 DIVALENT BRIDGED CYCLIC HYDROCARBON ALCOHOLS; ETCH RESISTANCE, TRANSPARENCY TO 220 NANOMETERS AND SHORTER NEC CORPORATION (JP) 2002-05-21 US disclosed
US-20020058205-A1 High molecular weight silicone compounds, resist compositions, and patterning method NAKASHIMA MUTSUO (JP) 2002-05-16 US disclosed
US-20020055550-A1 Organosiloxane polymer, photo-curable resin composition, patterning process, and substrate protective coating SHIN-ETSU CHEMICAL CO. LTD. (JP) 2002-05-09 US disclosed
US-6384169-B1 POLYHYDROXYSTYRENE WITH ACID LABILE GROUP, MODIFIED AT ENDS WITH ALKYLS, ESTERS OR ALCOHOLS; INCREASED DISSOLUTION RATE, HIGH SENSITIVITY AND RESOLUTION; RESIST PATTERNS HAVE PLASMA ETCHING RESISTANCE, HEAT RESISTANCE, REPRODUCIBILITY SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-05-07 US disclosed
US-20020051935-A1 Resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD (JP) 2002-05-02 US disclosed
US-20020051937-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-05-02 US disclosed
EP-0795786-B1 Positive photosensitive composition FUJI PHOTO FILM CO LTD (JP) 2002-05-02 EP disclosed
US-20020051936-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-05-02 US disclosed
US-20020048724-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-04-25 US disclosed
US-20020042017-A1 Chemically amplified positive resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-04-11 US disclosed
EP-0837367-B1 Positive resist composition comprising a dipyridyl compound SUMITOMO CHEMICAL CO (JP) 2002-04-10 EP disclosed
EP-1195390-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-04-10 EP disclosed
EP-1186624-A1 Organosiloxane polymers and photo-curable resin compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-03-13 EP disclosed
EP-0837368-B1 Positive resist composition SUMITOMO CHEMICAL CO (JP) 2002-02-20 EP disclosed
US-20020015906-A1 Polymer for photoresist, method of production thereof and photoresist composition containing polymer SAMSUNG ELECTRONICS CO., LTD. (KR) 2002-02-07 US disclosed
US-20020016431-A1 Monomer having diol structure, polymer thereof, and negative photoresist composition and pattern forming method using the same background of the invention NEC CORPORATION 2002-02-07 US disclosed
US-20020012871-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-01-31 US disclosed
US-20020012872-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-31 US disclosed
US-6340557-B1 DEPOSITING ANTI-REFLECTION COATING OF ORGANIC MATERIAL FOR ABSORBING ENERGY BEAM ON ETCHING TARGET FILM FORMED ON A SEMICONDUCTOR SUBSTRATE, A PHOTOSENSITIVE FILM INCLUDING A SULFONYL COMPOUND IS DEPOSITED; IRRADIATING, REMOVING MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2002-01-22 US disclosed
US-20020006576-A1 Positive type photoresist composition FUJIFILM CORPORATION (JP) 2002-01-17 US disclosed
US-20020007031-A1 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-01-17 US disclosed
US-20020004178-A1 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-01-10 US disclosed
US-20020004569-A1 Polymer, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-01-10 US disclosed
US-20020001772-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-01-03 US disclosed
US-6335141-B1 HIGH ALKALI DISSOLUTION CONTRAST, HIGH SENSITIVITY AND HIGH RESOLUTION SHIN-ETSU CHEMICAL, CO., LTD. (JP) 2002-01-01 US disclosed
US-20010055727-A1 Resist material and method for pattern formation SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-12-27 US disclosed
EP-1164433-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-19 EP disclosed
US-20010051315-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-12-13 US disclosed
US-20010051316-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-12-13 US disclosed
US-6329119-B1 ALKALI SOLUBLE RESIN, ACID GENERATOR, CROSSLINKING AGENT, AND A BASIC COMPOUND THAT IS EITHER A DIPYRIDYL COMPOUND OR A BISAMINOBENZENE COMPOUND; EXCELLENT PATTERN PROFILE, SMALL TEMPERATURE DEPENDENCY OF THE PATTERN DIMENSIONS, SENSITIVITY SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2001-12-11 US disclosed
US-20010046641-A1 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2001-11-29 US disclosed
US-6322949-B2 SULFONIUM COMPOUND AS PHOTOACID GENERATOR JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 2001-11-27 US disclosed
US-20010044066-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-11-22 US disclosed
US-20010044071-A1 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD (JP) 2001-11-22 US disclosed
US-20010044070-A1 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2001-11-22 US disclosed
US-20010038969-A1 Novel polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. OF (JP) 2001-11-08 US disclosed
US-20010039080-A1 Chemically amplified positive resist compositon SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2001-11-08 US disclosed
US-6312869-B1 Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group SHIN-ETSU CHEMICAL, CO., LTD. (JP) 2001-11-06 US disclosed
US-6312867-B1 Ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-11-06 US disclosed
US-20010036589-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION MERCK PATENT GMBH (DE) 2001-11-01 US disclosed
US-20010035394-A1 Chemically amplified positive resist composition and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-11-01 US disclosed
EP-1150166-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-31 EP disclosed
EP-1150167-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-31 EP disclosed
EP-1149825-A2 Ester compounds, polymers, resist compositions and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2001-10-31 EP disclosed
US-6309796-B1 PHOTORESISTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-30 US disclosed
US-20010033987-A1 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2001-10-25 US disclosed
US-20010033990-A1 Resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-25 US disclosed
US-20010033989-A1 Novel polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-25 US disclosed
EP-1148044-A1 Ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-24 EP disclosed
EP-1148045-A1 Ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-24 EP disclosed
US-20010031424-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. OF (JP) 2001-10-18 US disclosed
US-20010031429-A1 (Meth) acrylate, polymer, photoresist composition, and pattern forming process making use of the composition NEC CORPORATION (JP) 2001-10-18 US disclosed
EP-0880075-B1 Radiation sensitive resin composition JSR CORP (JP) 2001-10-17 EP disclosed
US-6303264-B1 PROFILE OF PATTERN OF QUARTER MICRON ORDER WITHOUT CAUSING FOOTING, WHILE RETAINING HIGH RESOLUTION ABILITY AND HIGH SENSITIVITY WAKO PURE CHEMICAL INDUSTRIES, LTD (JP) 2001-10-16 US disclosed
EP-1143299-A1 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2001-10-10 EP disclosed
US-20010026904-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-04 US disclosed
US-20010026901-A1 (Meth) acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it NEC CORPORATION (JP) 2001-10-04 US disclosed
US-20010024765-A1 Novel process for preparing resists MERCK PATENT GMBH (DE) 2001-09-27 US disclosed
EP-1136885-A1 Chemically amplified positive resist composition and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-09-26 EP disclosed
EP-0827970-B1 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials CLARIANT FINANCE BVI LTD (VG) 2001-09-26 EP disclosed
US-20010023050-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2001-09-20 US disclosed
EP-1132774-A2 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-09-12 EP disclosed
US-6284429-B1 FOR FORMULATING PHOTORESISTS HAVING SENSITIVITY, RESOLUTION, ETCHING RESISTANCE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-09-04 US disclosed
US-6284427-B1 Process for preparing resists CLARIANT FINANCE (BVI) LIMITED (VG) 2001-09-04 US disclosed
WO-2001063362-A2 RESIST MATERIALS FOR 157-NM LITHOGRAPHY MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2001-08-30 WO disclosed
WO-2001063360-A2 ENCAPSULATED INORGANIC RESISTS MASSACHUSETTS INSTITUTE OF TECHNOLOGY, INC. (US) 2001-08-30 WO disclosed
US-20010018162-A1 Novel polymers, chemical amplification resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-08-30 US disclosed
US-20010018161-A1 Photosensitive resin for photolithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2001-08-30 US disclosed
EP-1128212-A2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2001-08-29 EP disclosed
US-6280898-B1 PHOTORESISTS PATTERNS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-08-28 US disclosed
US-20010016298-A1 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2001-08-23 US disclosed
EP-1126322-A2 Fluorine-containing polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-08-22 EP disclosed
US-20010014427-A1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 2001-08-16 US disclosed
US-20010014428-A1 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2001-08-16 US disclosed
US-6274286-B1 Resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-08-14 US disclosed
EP-1122606-A2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2001-08-08 EP disclosed
EP-1122604-A2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2001-08-08 EP disclosed
EP-1122605-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-08-08 EP disclosed
EP-0794457-B1 Positive working photosensitive composition FUJI PHOTO FILM CO LTD (JP) 2001-08-08 EP disclosed
EP-0838727-B1 Radiation sensitive composition CLARIANT FINANCE BVI LTD (VG) 2001-06-20 EP disclosed
US-6248499-B1 ACRYLATE ESTER POLYMERS AND COPOLYMERS NEC CORPORATION (JP) 2001-06-19 US disclosed
US-20010003772-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICDL CO., LTD. OF (JP) 2001-06-14 US disclosed
US-6239231-B1 HAS THE POLYMERIZATION UNIT OF 2-ALKYL-2-ADAMANTYL (METH)ACRYLATE AND ONE OR BOTH OF THE POLYMERIZATION UNIT OF 3-HYDROXY-1-ADAMANTYL (METH)ACRYLATE OR (METH)ACRYLONITRILE; ACID GENERATOR; SEMICONDUCTORS SUMITOMO CHEMICAL, COMPANY LIMITED (JP) 2001-05-29 US disclosed
EP-1099983-A1 Chemically amplified positive resist composition and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2001-05-16 EP disclosed
EP-1096318-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-05-02 EP disclosed
EP-1096317-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-05-02 EP disclosed
US-6214517-B1 PHOTORESIST HAVING AN ESTER MOIETY AND HYDROLYZABLE GROUPS TOGETHER WITH AN ACID GENERATOR; ULTRAMICRO LITHOGRAPHY, INTEGRATED CIRCUITS FUJI PHOTO FILM CO., LTD. (JP) 2001-04-10 US disclosed
EP-0789279-B1 Polymer and resist material WAKO PURE CHEM IND LTD (JP) 2001-03-21 EP disclosed
EP-1085377-A1 Resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-03-21 EP disclosed
US-6200729-B1 A RESIN BLENDS COMPRISING A PHOTOACID GENERATOR WHICH IS CAPABLE OF GENERATING A SULFONIC ACID UPON IRRADIATION WITH ACTINIC RAYS OR A RADIATION; USE IN THE PRODUCTION OF LITHOGRAPHIC PRINTING PLATES AND SEMICONDUCTORS FUJI PHOTO FILM CO., LTD. (JP) 2001-03-13 US disclosed
US-6187504-B1 PHOTOSENSITIVE BLEND CONTAINING A NAPHTHALENE SULFONIUM SULFONATE DERIVATIVE PHOTOACID GENERATOR, RESIN HAVING ALKALI INSOLUBLE GROUPS CLEAVABLE BY ACID, AN ALKALI SOLUBLE RESIN AND A SOLUBILITY CONTROL AGENT; POSITIVES, RESOLUTION JSR CORPORATION (JP) 2001-02-13 US disclosed
EP-1059314-A1 A resist composition Wako Pure Chemical Industries, Ltd. (JP) 2000-12-13 EP disclosed
EP-1059563-A1 Agent for reducing substrate dependence of resist Wako Pure Chemical Industries, Ltd. (JP) 2000-12-13 EP disclosed
US-6156481-A WITH HYDROXYSTYRENE-(METH)ACRYLIC ACID OR (METH)ACRYLATE COPOLYMER WHERE SOME PHENOLIC HYDROXYL GROUPS ARE CROSSLINKED WITH ETHER CONTAINING ACID LABILE GROUPS; DISSOLUTION INHIBITION AND INCREASED DISSOLUTION CONTRAST AFTER EXPOSURE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-12-05 US disclosed
US-6156477-A Polymers and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-12-05 US disclosed
US-6156476-A Positive photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2000-12-05 US disclosed
EP-1053985-A1 Resist compositions and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2000-11-22 EP disclosed
US-6146806-A Negative photoresist composition using polymer having 1,2-diol structure and process for forming pattern using the same NEC CORPORATION (JP) 2000-11-14 US disclosed
US-6147249-A ESTER COMPOUND CAPABLE OF FORMING ACID-DECOMPOSABLE POLYMER WHICH CAN BE BLENDED AS BASE RESIN TO FORMULATE RESIST COMPOSITION HAVING HIGHER SENSITIVITY, RESOLUTION AND ETCHING RESISTANCE THAN CONVENTIONAL RESIST COMPOSITIONS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-11-14 US disclosed
US-6136502-A COMPRISING ORGANIC SOLVENT, AT LEAST TWO POLYMERS WITH WEIGHT AVERAGE MOLECULAR WEIGHTS OF 1,000-500,000 WHICH HAVE AT LEAST ONE TYPE OF ACID LABILE GROUP AND ARE CROSSLINKED WITHIN A MOLECULE AND/OR BETWEEN MOLECULES, PHOTOACID GENERATOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-10-24 US disclosed
EP-1042298-A1 POLYCYCLIC ALPHA-AMINO-EPSILON-CAPROLACTAMS AND RELATED COMPOUNDS Elan Pharmaceuticals, Inc. (US) 2000-10-11 EP disclosed
EP-1039346-A1 Resist compositions and pattering process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-09-27 EP disclosed
US-6117621-A APPLYING A CHEMICALLY AMPLIFIED POSITIVE RESIST OF A POLYMER WITH ACID LABILE GROUPS, A PHOTOACID GENERATOR AND A ORGANIC SOLVENT; RESOLUTION AND FOCAL DEPTH; EXPOSING, BAKING, AND DEVELOPING; CALIBRATION OF EXPOSURES AND DISSOLUTION RATES SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-09-12 US disclosed
US-6114462-A CROSSLINKING A POLYVINYLPHENOL DERIVATIVE WITH UNSATURATED ETHER DERIVATIVES SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-09-05 US disclosed
EP-1031879-A1 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-08-30 EP disclosed
US-6106993-A HIGHLY SENSITIVE TO ACTINIC RADIATION SUCH AS DEEP-UV, ELECTRON BEAM AND X-RAY, CAN BE DEVELOPED WITH ALKALINE AQUEOUS SOLUTION TO FORM A PATTERN, AND IS THUS SUITABLE FOR USE IN A FINE PATTERNING TECHNIQUE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-08-22 US disclosed
EP-0665470-B1 Method for forming a fine pattern MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) 2000-08-02 EP disclosed
EP-1024406-A1 Resist composition WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 2000-08-02 EP disclosed
US-6087072-A Article having a light-controllable super-water-repellent surface and a printing machine using the article HITACHI, LTD. (JP) 2000-07-11 US disclosed
US-6080522-A CONTAINING PHOTORESIST AND POLYMER CLARIANT INTERNAITONAL, LTD. (CH) 2000-06-27 US disclosed
EP-0607899-B1 Positive photoresist composition SUMITOMO CHEMICAL CO (JP) 2000-06-14 EP disclosed
US-6074801-A POLYMER WITH REPEATING UNITS, CROSSLINKING AND ADDING PHOTOACID GENERATOR WITH LIGHT NEC CORPORATION (JP) 2000-06-13 US disclosed
EP-1004568-A2 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-05-31 EP disclosed
EP-0869393-B1 Positive photosensitive composition FUJI PHOTO FILM CO LTD (JP) 2000-05-31 EP disclosed
US-6066433-A SILICONE POLYMER CONTAINING PHENOLIC HYDROXYL GROUPS HAVING HYDROGEN ATOMS OF SOME PHENOLIC HYDROXYL GROUPS REPLACED BY ACID LABILE GROUPS, CROSSLINKED AT SOME OF THE REMAINING PHENOLIC HYDROXYL GROUPS WITH GROUPS HAVING ETHER LINKAGES SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-05-23 US disclosed
US-6063545-A Negative-working radiation-sensitive mixture, and radiation-sensitive recording material produced with this mixture CLARIANT GMBH (DE) 2000-05-16 US disclosed
EP-0762207-B1 Positive working photosensitive composition and method of producing relief structures BASF AG (DE) 2000-04-12 EP disclosed
US-6048661-A POLYMER WITH HYDROXY AND CARBOXY GROUPS AND ETHER ESTER GROUPS FOR PHOTORESISTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-04-11 US disclosed
EP-0989460-A1 PATTERN FORMING METHOD Clariant Finance (BVI) Limited (VG) 2000-03-29 EP disclosed
EP-0989459-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION Clariant Finance (BVI) Limited (VG) 2000-03-29 EP disclosed
US-6037098-A AROMATIC SULFONIC ACID GENERATED FROM A SULFONIUM COMPOUND TO ENHANCE RESIN ALKALINE SOLUBILITY; REDUCED DIFFUSIBILITY OF ACID IN FILM, I.E., UNIFORM LINE WIDTH; HIGH PHOTOSENSITIVITY AND PHOTODECOMPOSITION EFFICIENCY FUJI PHOTO FILM CO., LTD. (JP) 2000-03-14 US disclosed
US-6033826-A POLYHYDROXYSTYRENE DERIVATIVE CONTAINING AN ACETAL OR KETAL GROUP WHICH CAN EASILY BE ELIMINATED IN THE PRESENCE OF AN ACID IN THE MOLECULE AND HAVING A VERY NARROW MOLECULAR WEIGHT DISTRIBUTION GIVES A RESIST MATERIAL WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 2000-03-07 US disclosed
US-6033828-A POLYVINYLPHENOL DERIVATIVES SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-03-07 US disclosed
EP-0982628-A2 A chemical amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2000-03-01 EP disclosed
US-6030746-A CHEMICALLY AMPLIFIED POSITIVE RESIST COMPRISES A ORGANIC SOLVENT, AN ALKALI SOLUBLE RESIN, A PHOTOACID GENERATOR AND A DISSOLUTION RATE REGULATOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-02-29 US disclosed
US-6030747-A CHEMICALLY AMPLIFIED RESIST CONSISTS OF A PHOTOACID GENERATOR, A CROSSLINKING AGENT ACTIVATED IN PRESENCE OF ACID AND A COPOLYMER OF ACRYLIC OR METHACRYLIC ESTER CONTAINING AN ACID, HYDROXY OR ESTER POLAR GROUP AND A COMPOUND NEC CORPORATION (JP) 2000-02-29 US disclosed
US-6027854-A ACTINIC RADIATION-SENSITIVE, CROSSLINKED TERPOLYMER CONTAINING STYRENIC GROUPS RING-SUBSTITUTED WITH HYDROXYL, HYDROXYALKYLOXY, CARBOXYALKYLOXY MOIETIES AND ACID LABILE GROUPS; ETCHING AND HEAT RESISTANCE SHIN-ETSU CHEMICAL CO., LTD. 2000-02-22 US disclosed
US-6027852-A Article having a light-controllable super-water-repellent surface and a printing machine using the article HITACHI, LTD. (JP) 2000-02-22 US disclosed
US-6013413-A Alicyclic nortricyclene polymers and co-polymers CORNELL RESEARCH FOUNDATION, INC. (US) 2000-01-11 US disclosed
US-6010820-A COMPOUND CAPABLE OF GENERTING SULFONIC ACID UPON IRRADIATION FUJI PHOTO FILM CO., LTD. (JP) 2000-01-04 US disclosed
EP-0534324-B1 Radiation sensitive compositions comprising polymer having acid labile groups SHIPLEY CO (US) 1999-12-22 EP disclosed
EP-0704762-B1 Resist material and pattern formation WAKO PURE CHEM IND LTD (JP) 1999-12-15 EP disclosed
US-5994022-A BECOMES SOLUBLE IN ALKALI DEVELOPING SOLUTION BY ACTION OF AN ACID JSR CORPORATION (JP) 1999-11-30 US disclosed
US-5981140-A COMPRISES A RESIN GROUP CAPABLE OF DECOMPOSING BY THE ACTION OF AN ACID TO ENHANCE SOLUBILITY OF THE RESIN IN AN ALKALINE DEVELOPING SOLUTION AND A SULFONIUM OR IODINIUM ARYLATE CONTAINING AROMATIC SULFONIC ACID COMPOUND FUJI PHOTO FILM CO., LTD. (JP) 1999-11-09 US disclosed
US-5976759-A ALKALI SOLUBLE BY HEATING WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1999-11-02 US disclosed
US-5972560-A A CROSSLINKED POLYSILOXANE PHOTOACID GENERATOR HAVING HIGH TRANSPARENCY, HIGH RESOLUTION, IMPROVED LATITUDE OF EXPOSURE, PROCESS ADAPTABILITY, AND FOR PRECISE MICRO-PROCESSING SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-10-26 US disclosed
US-5972559-A A PHOTORESIST MIXTURE COMPRISING AN ORGANIC SOLVENT, A COPOLYCARBONS BASE RESIN, A PHOTOACID GENERATOR, AND AN AROMATIC ALKYLENE CARBOXYLIC ACID COMPOUND; FOR IMPROVING THE FOOTING ON NITRIDE FILM SUBSTRATES AND POST EXPOSURE DELAY SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-10-26 US disclosed
US-5962187-A MIXED SOLVENT OF PROPYLENE GLYCOL MONOMETHYL ETHER ACETATE AND OTHER PROPYLENE GLYCOL DERIVATIVE. PHOTORESISTS CLARIENT INTERNATIONAL LTD. (CH) 1999-10-05 US disclosed
US-5958648-A Radiation sensitive resin composition JSR CORPORATION (JP) 1999-09-28 US disclosed
EP-0553737-B1 Radiation-sensitive composition BASF AG (DE) 1999-09-22 EP disclosed
EP-0942329-A1 NOVEL PROCESS FOR PREPARING RESISTS Clariant International Ltd. (CH) 1999-09-15 EP disclosed
US-5952150-A COMPRISING A DISULFONYLMETHANE DERIVATIVE, A RESIN PROTECTED BY AN ACID DECOMPOSABLE GROUP OR AN ALKALI-SOLUBLE RESIN AND AN ALKALI SOLUBILITY CONTROL AGENT; PHOTORESISTS JSR CORPORATION (JP) 1999-09-14 US disclosed
EP-0939342-A1 Process for forming photoresist patterns Sharp Kabushiki Kaisha (JP) 1999-09-01 EP disclosed
US-5945250-A CONTAINING A SULFONIUM SALT RESIN; HAVING GOOD SOLUBILITY IN SOLVENT, HIGH PHOTOSENSITIVITY, EXCELLENT RESIST PATTERN AND STABILITY FUJI PHOTO FILM CO., LTD. (JP) 1999-08-31 US disclosed
US-5942367-A HIGH SENSITIVITY, RESOLUTION SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-08-24 US disclosed
WO-1999032453-A1 POLYCYCLIC α-AMINO-⊂-CAPROLACTAMS AND RELATED COMPOUNDS ELAN PHARMACEUTICALS, INC. (US) 1999-07-01 WO disclosed
US-5916728-A RESIN WHICH IS CONVERTED TO ALKALI-SOLUBLE FROM ALKALI-INSOLUBLE OR ALKALI-SLIGHTLY SOLUBLE BY THE ACTION OF AN ACID, ACID GENERATOR AND TERTIARY AMINE COMPOUND HAVING AN ALIPHATIC HYDROXYL GROUP. SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 1999-06-29 US disclosed
US-5914219-A Radiation-sensitive mixture and the production of relief structures having improved contrast BASF AKTIENGESELLSCHAFT (DE) 1999-06-22 US disclosed
EP-0922998-A1 RADIATION-SENSITIVE RESIST COMPOSITION WITH HIGH HEAT RESISTANCE Clariant International Ltd. (CH) 1999-06-16 EP disclosed
EP-0908783-A1 Resist compositions, their preparation and use for patterning processes SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-04-14 EP disclosed
EP-0908473-A1 Styrene polymers, chemically-amplified positive resist compositions, their preparation and use in a patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-04-14 EP disclosed
US-5891603-A N-HYDROCARBYLSULFONYLOXY-SUBSTITUTED CYCLIC IMIDE SULFONIC ACID GENERATORS, POLYVINYLPHENOL DERIVATIVES FUJI PHOTO FILM CO., LTD. (JP) 1999-04-06 US disclosed
US-5891601-A DIPYRIDYL COMPOUND SUMITOMO CHEMICAL COMPANY, LTD. (JP) 1999-04-06 US disclosed
US-5876900-A POLYHYDROXYSTYRENE POLYMER SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-03-02 US disclosed
US-5866304-A USING AN ACRYLATED ACID TERPOLYMER NEC CORPORATION (JP) 1999-02-02 US disclosed
US-5856561-A Bisphenol carboxylic acid tertiary ester derivatives and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-01-05 US disclosed
EP-0887705-A1 Resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-30 EP disclosed
US-5852128-A Acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials CLARIANT AG (CH) 1998-12-22 US disclosed
EP-0880075-A1 Radiation sensitive resin composition JSR Corporation (JP) 1998-11-25 EP disclosed
EP-0681713-B1 SULPHONIC ACID ESTERS, RADIATION-SENSITIVE MIXTURES MADE THEREWITH, AND THEIR USE CLARIANT GMBH (DE) 1998-11-18 EP disclosed
US-5837423-A Semiconductor IC device fabricating method HITACHI, LTD. (JP) 1998-11-17 US disclosed
US-5837420-A USED IN MANUFACTURING OF LITHOGRAPHIC PRINTING PLATE, INTEGRATED CIRCUITS, CIRCUIT SUBSTRATE FOR LIQUID CRYSTAL, THERMAL HEAD FUJI PHOTO FILM CO., LTD. (JP) 1998-11-17 US disclosed
EP-0875787-A1 Method for reducing the substrate dependence of resist Wako Pure Chemical Industries, Ltd. (JP) 1998-11-04 EP disclosed
EP-0869393-A1 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 1998-10-07 EP disclosed
EP-0510449-B1 Acid-cleavable compounds, positive-working radiation-sensitive composition containing the same and radiation-sensitive recording material prepared therefrom CLARIANT GMBH (DE) 1998-08-05 EP disclosed
US-5783354-A QUATERNARY AMMONIUM COMPOUNDS BASF AKTIENGESELLSCHAFT (DE) 1998-07-21 US disclosed
EP-0851297-A1 Radiation-sensitive composition adapted for roller coating CLARIANT INTERNATIONAL LTD. (CH) 1998-07-01 EP disclosed
EP-0851298-A1 Radiation sensitive composition adapted for roller coating CLARIANT INTERNATIONAL LTD. (CH) 1998-07-01 EP disclosed
EP-0849634-A1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1998-06-24 EP disclosed
US-5759750-A Radiation-sensitive mixture BASF AKTIENGESELLSCHAFT (DE) 1998-06-02 US disclosed
EP-0843220-A1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1998-05-20 EP disclosed
EP-0838727-A1 Radiation sensitive composition Clariant International Ltd. (CH) 1998-04-29 EP disclosed
EP-0837367-A2 Positive resist composition comprising a dipyridyl compound SUMITOMO CHEMICAL COMPANY LIMITED (JP) 1998-04-22 EP disclosed
EP-0837368-A1 Positive resist composition SUMITOMO CHEMICAL COMPANY LIMITED (JP) 1998-04-22 EP disclosed
US-5738975-A MIXTURE CONTAINING (METH)ACRYLATE TERPOLYMER HAVING GROUP WHICH REACTS WITH AN ACID TO CONVERT POLARITY OF POLYMER, PHOTO ACID GENERATING COMPOUND, SOLVENT NEC CORPORATION (JP) 1998-04-14 US disclosed
EP-0831369-A2 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 1998-03-25 EP disclosed
EP-0827970-A2 New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials Clariant AG (CH) 1998-03-11 EP disclosed
US-5716756-A POSITIVE OR NEGATIVE WORKING MIXTURES HOECHST AKTIENGESELLSCHAFT (DE) 1998-02-10 US disclosed
EP-0819981-A1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1998-01-21 EP disclosed
EP-0388813-B1 Pattern forming material and process for forming pattern using the same HITACHI LTD (JP) 1997-12-10 EP disclosed
US-5691111-A SULFONIUM SALT, ACRYLATE ESTER POLYMER NEC CORPORATION (JP) 1997-11-25 US disclosed
EP-0803775-A1 Positive working photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 1997-10-29 EP disclosed
EP-0795786-A2 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 1997-09-17 EP disclosed
EP-0794457-A2 Positive working photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 1997-09-10 EP disclosed
EP-0508174-B1 Radiation sensitive mixture, containing groups which are labile in acid environment and method for fabrication of relief patterns and relief images BASF AG (DE) 1997-09-03 EP disclosed
EP-0789279-A1 Polymer and resist material WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1997-08-13 EP disclosed
EP-0780732-A2 Polymer composition and resist material WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1997-06-25 EP disclosed
US-5641715-A Semiconductor IC device fabricating method HITACHI, LTD. (JP) 1997-06-24 US disclosed
US-5635332-A MIXTURE WITH ULTRAVIOLET TRANSPARENT POLYMER HAVING GROUPS WHICH ARE UNSTABLE TO ACID NEC CORPORATION (JP) 1997-06-03 US disclosed
US-5633112-A Photosensitive resin composition containing a carboxylic acid polymer, photoacid generator and secondary or tertiary aliphatic amine HITACHI, LTD. (JP) 1997-05-27 US disclosed
EP-0616258-B1 Radiation sensitive composition and process for forming relief structures with improved contrast BASF AG (DE) 1997-05-21 EP disclosed
US-5621019-A PHOTORESIST CONTAINING PHOTO ACID GENERATOR AND ULTRAVIOLET RADIATION TRANSPARENT ACRYLIC POLYMER HAVING BRIDGED CYCLOHYDROCARBON GROUP RESIDUE; RESOLUTION, DRY ETCH RESISTANCE NEC CORPORATION (JP) 1997-04-15 US disclosed
EP-0762207-A2 Positive working photosensitive composition and method of producing relief structures BASF AKTIENGESELLSCHAFT (DE) 1997-03-12 EP disclosed
US-5585507-A FINENESS PATTERNS NEC CORPORATION (JP) 1996-12-17 US disclosed
US-5585223-A RADIATION ACTIVATION; HEATING; ETCHING CORNELL RESEARCH FOUNDATION, INC. (US) 1996-12-17 US disclosed
US-5565304-A ALKALI SOLUBLE BINDER RESIN FROM HYDROXYSTYRENEAND METHYLOLATED PHENOLIC COMPOUND OCG MICROELECTRONIC MATERIALS, INC. (US) 1996-10-15 US disclosed
US-5558971-A HYDROXYSTYRENE POLYMER DERIVATIVES, PHOTOACID GENERATOR WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1996-09-24 US disclosed
US-5558976-A HYDROXYSTYRENE POLYMER DERIVATIVES, PHOTOACID GENERATOR, PHOTORESISTS WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1996-09-24 US disclosed
US-5550004-A RESIN BINDER HAVING HYDROXYSTYRENE AND MONOMETHYLOLATED PHENOLIC COMPOUNDS OCG MICROELECTRONIC MATERIALS, INC. (US) 1996-08-27 US disclosed
EP-0727711-A2 Photoresist compositions containing supercritical fluid fractionated polymeric binder resins OCG MICROELECTRONIC MATERIALS, INC. (US) 1996-08-21 EP disclosed
US-5536616-A Photoresists containing water soluble sugar crosslinking agents CORNELL RESEARCH FOUNDATION, INC. (US) 1996-07-16 US disclosed
US-5532113-A IRRADIATING PREDETERMINED SITES OF PHOTORESIST TO ACTIVATE PHOTOACTIVE AGENT AT THE SITES AND CREATE EXPOSED AND UNEXPOSED SITES OF PHOTORESIST, HEATING PHOTORESIST, REMOVING MATTER FROM UNEXPOSED SITES CORNELL RESEARCH FOUNDATION (US) 1996-07-02 US disclosed
US-5532106-A MICROELECTRONICS WITH POLYMERS, PHOTOACTIVE AGENTS AND DISSOLUTION INHIBITORS CORNELL RESEARCH FOUNDATION, INC. (US) 1996-07-02 US disclosed
US-5518579-A SEMICONDUCTORS MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1996-05-21 US disclosed
EP-0704762-A1 Resist material and pattern formation WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1996-04-03 EP disclosed
EP-0697632-A2 Chemically amplified radiation-sensitive composition OCG MICROELECTRONIC MATERIALS, INC. (US) 1996-02-21 EP disclosed
US-5470996-A Pattern forming material and process for forming pattern using the same HITACHI, LTD. (JP) 1995-11-28 US disclosed
EP-0681713-A1 SULPHONIC ACID ESTERS, RADIATION-SENSITIVE MIXTURES MADE THEREWITH, AND THEIR USE HOECHST AKTIENGESELLSCHAFT (DE) 1995-11-15 EP disclosed
EP-0665470-A2 Method for forming a fine pattern MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1995-08-02 EP disclosed
JP-H06348015-A PHOTOSENSITIVE RESIN COMPOSITION AND RESIST IMAGE FORMING METHOD HITACHI CHEM CO LTD 1994-12-22 JP disclosed
US-5362600-A Radiation sensitive compositions comprising polymer having acid labile groups SHIPLEY COMPANY INC. (US) 1994-11-08 US disclosed
EP-0620500-A2 Resist and pattern formation using the same HITACHI, LTD. (JP) 1994-10-19 EP disclosed
EP-0616258-A1 Radiation sensitive composition and process for forming relief structures with improved contrast BASF Aktiengesellschaft (DE) 1994-09-21 EP disclosed
WO-1994018606-A1 SULPHONIC ACID ESTERS, RADIATION-SENSITIVE MIXTURES MADE THEREWITH, AND THEIR USE HOESCHT AKTIENGESELLSCHAFT (DE) 1994-08-18 WO disclosed
EP-0607899-A2 Positive photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 1994-07-27 EP disclosed
US-5328807-A Method of forming a pattern HITICHI, LTD. (JP) 1994-07-12 US disclosed
US-5318876-A Solutions of water insoluble, base soluble polymeric binder, substituted sulfonium salts, substituted benzenesulfonates, having tolerance for delay between exposure and heating to develop BASF AKTIENGESELLSCHAFT (DE) 1994-06-07 US disclosed
EP-0588544-A2 Fine pattern forming material and pattern formation process WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1994-03-23 EP disclosed
EP-0586860-A2 Photoresist composition and process for forming a pattern using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 1994-03-16 EP disclosed
US-5258257-A Radiation sensitive compositions comprising polymer having acid labile groups SHIPLEY COMPANY INC. (US) 1993-11-02 US disclosed
EP-0553737-A1 Radiation-sensitive composition BASF Aktiengesellschaft (DE) 1993-08-04 EP disclosed
EP-0534324-A1 Radiation sensitive compositions comprising polymer having acid labile groups SHIPLEY COMPANY INC. (US) 1993-03-31 EP disclosed
EP-0510441-A1 Positive-working radiation-sensitive composition and radiation-sensitive recording material produced therewith HOECHST AKTIENGESELLSCHAFT (DE) 1992-10-28 EP disclosed
EP-0510446-A1 Negative-working radiation-sensitive composition and radiation-sensitive recording material produced therewith HOECHST AKTIENGESELLSCHAFT (DE) 1992-10-28 EP disclosed
EP-0508174-A1 Radiation sensitive mixture, containing groups which are labile in acid environment and method for fabrication of relief patterns and relief images BASF Aktiengesellschaft (DE) 1992-10-14 EP disclosed
US-5118582-A PATTERN FORMING MATERIAL AND PROCESS FOR FORMING PATTERN USING THE SAME HITACHI, LTD. (JP) 1992-06-02 US disclosed
EP-0388813-A2 Pattern forming material and process for forming pattern using the same HITACHI, LTD. (JP) 1990-09-26 EP disclosed
EP-0388813-A2 Pattern forming material and process for forming pattern using the same HITACHI, LTD. (JP) 1990-09-26 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (50 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10564542-B2 Photoresist compositions and methods PARG, PNN, PARN CYP1A2 4427/4885ALPL 2194/4885TSHR 4722/4885
US-20030194634-A1 Novel anthracene derivative and radiation-sensitive resin composition SRSF1, ARL1, ERCC4 CYP1A2 2917/4885ALPL 2280/4885TSHR 3953/4885
US-12493241-B2 Photoacid generators, photoresist compositions, and pattern formation methods ARF1, ARL1, GNA11 CYP1A2 528/4885ALPL 4371/4885TSHR 3242/4885
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“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.